ATE279018T1 - Apparat zur formung von nanostrukturen auf der oberfläche von halbleiterscheiben mittels ionenstrahl - Google Patents

Apparat zur formung von nanostrukturen auf der oberfläche von halbleiterscheiben mittels ionenstrahl

Info

Publication number
ATE279018T1
ATE279018T1 AT01948177T AT01948177T ATE279018T1 AT E279018 T1 ATE279018 T1 AT E279018T1 AT 01948177 T AT01948177 T AT 01948177T AT 01948177 T AT01948177 T AT 01948177T AT E279018 T1 ATE279018 T1 AT E279018T1
Authority
AT
Austria
Prior art keywords
wafer
semiconductor
ion beam
electron
front face
Prior art date
Application number
AT01948177T
Other languages
English (en)
Inventor
Valery Konstantinovich Smirnov
Dmitry Stanislavovich Kibalov
Original Assignee
Sceptre Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sceptre Electronics Ltd filed Critical Sceptre Electronics Ltd
Application granted granted Critical
Publication of ATE279018T1 publication Critical patent/ATE279018T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31735—Direct-write microstructures
    • H01J2237/31737—Direct-write microstructures using ions
AT01948177T 2000-07-04 2001-07-02 Apparat zur formung von nanostrukturen auf der oberfläche von halbleiterscheiben mittels ionenstrahl ATE279018T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU2000117335/28A RU2164718C1 (ru) 2000-07-04 2000-07-04 Установка для формирования наноструктур на поверхности полупроводниковых пластин ионными пучками
PCT/RU2001/000261 WO2002003419A2 (fr) 2000-07-04 2001-07-02 Installation pour former des nanostructures a la surface de plaquettes de semi-conducteur par faisceaux d'ions

Publications (1)

Publication Number Publication Date
ATE279018T1 true ATE279018T1 (de) 2004-10-15

Family

ID=20237171

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01948177T ATE279018T1 (de) 2000-07-04 2001-07-02 Apparat zur formung von nanostrukturen auf der oberfläche von halbleiterscheiben mittels ionenstrahl

Country Status (13)

Country Link
US (1) US20020170497A1 (de)
EP (1) EP1280192B1 (de)
JP (1) JP2004502291A (de)
AT (1) ATE279018T1 (de)
AU (1) AU2001269655A1 (de)
CA (1) CA2382984A1 (de)
DE (1) DE60106230T2 (de)
DK (1) DK1280192T3 (de)
ES (1) ES2232637T3 (de)
PL (1) PL353885A1 (de)
PT (1) PT1280192E (de)
RU (1) RU2164718C1 (de)
WO (1) WO2002003419A2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2001270833A1 (en) * 2000-07-18 2002-01-30 Optaglio Limited Diffractive device
US20100085642A1 (en) * 2000-07-18 2010-04-08 Optaglio Limited Diffractive device
GB0117391D0 (en) 2001-07-17 2001-09-05 Optaglio Ltd Optical device and method of manufacture
US7351346B2 (en) * 2004-11-30 2008-04-01 Agoura Technologies, Inc. Non-photolithographic method for forming a wire grid polarizer for optical and infrared wavelengths
US7561332B2 (en) * 2004-11-30 2009-07-14 Agoura Technologies, Inc. Applications and fabrication techniques for large scale wire grid polarizers
JP4307470B2 (ja) * 2006-08-08 2009-08-05 株式会社日立ハイテクノロジーズ 荷電粒子線装置、試料加工方法及び半導体検査装置
US20080129930A1 (en) * 2006-12-01 2008-06-05 Agoura Technologies Reflective polarizer configuration for liquid crystal displays
WO2012168979A1 (ja) 2011-06-10 2012-12-13 日立コンシューマエレクトロニクス株式会社 ディスク状記録媒体、及びディスク状記録媒体の記録再生装置
JP5840294B2 (ja) 2011-08-05 2016-01-06 ウォステック・インコーポレイテッドＷｏｓｔｅｃ， Ｉｎｃ ナノ構造層を有する発光ダイオードならびに製造方法および使用方法
US9134250B2 (en) * 2012-03-23 2015-09-15 Wostec, Inc. SERS-sensor with nanostructured layer and methods of making and using
DE102012017502B4 (de) * 2012-05-30 2022-11-17 Airbus Defence and Space GmbH Verfahren zur Nanostrukturierung von anorganischen und organischen Materialien mit hochenergetischer gepulster Laserstrahlung
US9500789B2 (en) 2013-03-13 2016-11-22 Wostec, Inc. Polarizer based on a nanowire grid
RU2548016C1 (ru) * 2013-10-16 2015-04-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Сибирский государственный аэрокосмический университет имени академика М.Ф. Решетнева" (СибГАУ) Устройство для ионной обработки внутренних поверхностей изделий миллиметрового диапазона
US20170194167A1 (en) 2014-06-26 2017-07-06 Wostec, Inc. Wavelike hard nanomask on a topographic feature and methods of making and using
WO2018093284A1 (en) 2016-11-18 2018-05-24 Wostec, Inc. Optical memory devices using a silicon wire grid polarizer and methods of making and using
WO2018156042A1 (en) 2017-02-27 2018-08-30 Wostec, Inc. Nanowire grid polarizer on a curved surface and methods of making and using
RU2755405C1 (ru) * 2020-12-22 2021-09-15 Федеральное государственное бюджетное учреждение науки Институт теплофизики им. С.С. Кутателадзе Сибирского отделения Российской академии наук Установка для высокотемпературного вакуумного отжига тонких плёнок с возможностью in situ оптического наблюдения с высоким разрешением

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4147937A (en) * 1977-11-01 1979-04-03 Fujitsu Limited Electron beam exposure system method and apparatus
EP0275965B1 (de) * 1987-01-19 1995-05-31 Hitachi, Ltd. Mit einem Plasma arbeitendes Gerät
US4874947A (en) * 1988-02-26 1989-10-17 Micrion Corporation Focused ion beam imaging and process control
US5311028A (en) * 1990-08-29 1994-05-10 Nissin Electric Co., Ltd. System and method for producing oscillating magnetic fields in working gaps useful for irradiating a surface with atomic and molecular ions
RU2007783C1 (ru) * 1991-10-02 1994-02-15 Борис Михайлович Овчинников Способ создания наноструктур
US5852298A (en) * 1995-03-30 1998-12-22 Ebara Corporation Micro-processing apparatus and method therefor
FR2757881B1 (fr) * 1996-12-31 1999-04-09 Univ Paris Curie Procede de traitement d'une surface d'un semi-conducteur, dispositif correspondant et semi-conducteur associe
US6039000A (en) * 1998-02-11 2000-03-21 Micrion Corporation Focused particle beam systems and methods using a tilt column

Also Published As

Publication number Publication date
PL353885A1 (en) 2003-12-01
EP1280192A2 (de) 2003-01-29
DE60106230T2 (de) 2005-08-18
CA2382984A1 (en) 2002-01-10
WO2002003419A3 (fr) 2002-10-24
PT1280192E (pt) 2005-02-28
JP2004502291A (ja) 2004-01-22
DE60106230D1 (de) 2004-11-11
RU2164718C1 (ru) 2001-03-27
EP1280192A4 (de) 2003-03-26
ES2232637T3 (es) 2005-06-01
DK1280192T3 (da) 2005-02-07
WO2002003419A2 (fr) 2002-01-10
AU2001269655A1 (en) 2002-01-14
EP1280192B1 (de) 2004-10-06
US20020170497A1 (en) 2002-11-21

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