ATE272206T1 - Herstellungsverfahren eines vibrationsstrukturkreisels - Google Patents

Herstellungsverfahren eines vibrationsstrukturkreisels

Info

Publication number
ATE272206T1
ATE272206T1 AT99962348T AT99962348T ATE272206T1 AT E272206 T1 ATE272206 T1 AT E272206T1 AT 99962348 T AT99962348 T AT 99962348T AT 99962348 T AT99962348 T AT 99962348T AT E272206 T1 ATE272206 T1 AT E272206T1
Authority
AT
Austria
Prior art keywords
layer
aluminium
silicon
photoresist material
photoresist
Prior art date
Application number
AT99962348T
Other languages
English (en)
Inventor
Christopher Paul Fell
Kevin Townsend
Ian Sturland
Original Assignee
Bae Systems Plc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bae Systems Plc filed Critical Bae Systems Plc
Application granted granted Critical
Publication of ATE272206T1 publication Critical patent/ATE272206T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/567—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using the phase shift of a vibration node or antinode
    • G01C19/5677—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using the phase shift of a vibration node or antinode of essentially two-dimensional vibrators, e.g. ring-shaped vibrators
    • G01C19/5684—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using the phase shift of a vibration node or antinode of essentially two-dimensional vibrators, e.g. ring-shaped vibrators the devices involving a micromechanical structure

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Gyroscopes (AREA)
  • Pressure Sensors (AREA)
  • Buildings Adapted To Withstand Abnormal External Influences (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
AT99962348T 1998-12-24 1999-12-17 Herstellungsverfahren eines vibrationsstrukturkreisels ATE272206T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9828478.9A GB9828478D0 (en) 1998-12-24 1998-12-24 Method of manufacturing a vibrating structure gyroscope
PCT/GB1999/004298 WO2000039525A1 (en) 1998-12-24 1999-12-17 Method of manufacturing a vibrating structure gyroscope

Publications (1)

Publication Number Publication Date
ATE272206T1 true ATE272206T1 (de) 2004-08-15

Family

ID=10844917

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99962348T ATE272206T1 (de) 1998-12-24 1999-12-17 Herstellungsverfahren eines vibrationsstrukturkreisels

Country Status (17)

Country Link
US (1) US6471883B1 (de)
EP (1) EP1163490B1 (de)
JP (1) JP5049427B2 (de)
KR (1) KR100630916B1 (de)
CN (1) CN1128342C (de)
AT (1) ATE272206T1 (de)
AU (1) AU762989B2 (de)
CA (1) CA2353147A1 (de)
CZ (1) CZ20012348A3 (de)
DE (1) DE69919036T2 (de)
ES (1) ES2221469T3 (de)
GB (1) GB9828478D0 (de)
HU (1) HU223540B1 (de)
NO (1) NO20013151L (de)
PL (1) PL348418A1 (de)
TW (1) TW593980B (de)
WO (1) WO2000039525A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100444588B1 (ko) * 2002-11-12 2004-08-16 삼성전자주식회사 글래스 웨이퍼의 비아홀 형성방법
US20050062362A1 (en) * 2003-08-28 2005-03-24 Hongyuan Yang Oscillatory gyroscope
US7464590B1 (en) * 2004-03-12 2008-12-16 Thomson Licensing Digitally programmable bandwidth for vibratory rate gyroscope
JP5145637B2 (ja) * 2005-03-04 2013-02-20 ソニー株式会社 振動型ジャイロセンサ
EP2126155B1 (de) 2006-12-15 2019-03-13 BAE Systems PLC Verbesserungen bezüglich dünnfilm-gettervorrichtungen
CN101666646B (zh) * 2009-10-16 2011-03-16 中国人民解放军国防科学技术大学 一种倾斜双端音叉式硅微机械陀螺及其制作方法
CN103442324B (zh) * 2013-08-22 2017-08-18 上海华虹宏力半导体制造有限公司 背板及其制造方法
US9825610B1 (en) 2014-02-28 2017-11-21 Hrl Laboratories, Llc Tunable stiffness mechanical filter and amplifier
GB2565298B (en) 2017-08-07 2022-03-16 Atlantic Inertial Systems Ltd Angular rate sensors
GB2567479B (en) 2017-10-13 2022-04-06 Atlantic Inertial Systems Ltd Angular rate sensors
GB2570732B (en) 2018-02-06 2023-01-11 Atlantic Inertial Systems Ltd Angular rate sensors

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216490A (en) * 1988-01-13 1993-06-01 Charles Stark Draper Laboratory, Inc. Bridge electrodes for microelectromechanical devices
US5846638A (en) * 1988-08-30 1998-12-08 Onyx Optics, Inc. Composite optical and electro-optical devices
US5006487A (en) * 1989-07-27 1991-04-09 Honeywell Inc. Method of making an electrostatic silicon accelerometer
US5555765A (en) * 1993-02-10 1996-09-17 The Charles Stark Draper Laboratory, Inc. Gimballed vibrating wheel gyroscope
GB2276976B (en) * 1993-04-07 1996-10-23 British Aerospace Method of manufacturing a motion sensor
US5450751A (en) * 1993-05-04 1995-09-19 General Motors Corporation Microstructure for vibratory gyroscope
US5547093A (en) * 1994-09-14 1996-08-20 Delco Electronics Corporation Method for forming a micromachine motion sensor
US5725729A (en) * 1994-09-26 1998-03-10 The Charles Stark Draper Laboratory, Inc. Process for micromechanical fabrication
US5789323A (en) * 1995-04-25 1998-08-04 Ramtron International Corporation Fabrication of metal-ferroelectric-metal capacitors with a two step patterning sequence
US5600065A (en) * 1995-10-25 1997-02-04 Motorola, Inc. Angular velocity sensor
KR0171009B1 (ko) * 1995-12-07 1999-05-01 양승택 원판 진동형 마이크로 자이로스코프 및 그의 제조방법
US5806365A (en) * 1996-04-30 1998-09-15 Motorola, Inc. Acceleration sensing device on a support substrate and method of operation
DE19617666B4 (de) * 1996-05-03 2006-04-20 Robert Bosch Gmbh Mikromechanischer Drehratensensor
US5992233A (en) * 1996-05-31 1999-11-30 The Regents Of The University Of California Micromachined Z-axis vibratory rate gyroscope
US5885353A (en) * 1996-06-21 1999-03-23 Micron Technology, Inc. Thermal conditioning apparatus
US5924010A (en) * 1996-10-30 1999-07-13 United Microelectronics Corp. Method for simultaneously fabricating salicide and self-aligned barrier
US6146917A (en) * 1997-03-03 2000-11-14 Ford Motor Company Fabrication method for encapsulated micromachined structures
US6143583A (en) * 1998-06-08 2000-11-07 Honeywell, Inc. Dissolved wafer fabrication process and associated microelectromechanical device having a support substrate with spacing mesas
US5929497A (en) * 1998-06-11 1999-07-27 Delco Electronics Corporation Batch processed multi-lead vacuum packaging for integrated sensors and circuits
US6159798A (en) * 1998-11-17 2000-12-12 Winbond Electronics Corporation Method for forming a floating gate with improved surface roughness

Also Published As

Publication number Publication date
DE69919036D1 (de) 2004-09-02
EP1163490A1 (de) 2001-12-19
ES2221469T3 (es) 2004-12-16
JP2002533703A (ja) 2002-10-08
CA2353147A1 (en) 2000-07-06
EP1163490B1 (de) 2004-07-28
HUP0104694A2 (hu) 2002-03-28
CZ20012348A3 (cs) 2001-11-14
HU223540B1 (hu) 2004-09-28
US6471883B1 (en) 2002-10-29
HUP0104694A3 (en) 2002-05-28
AU762989B2 (en) 2003-07-10
NO20013151L (no) 2001-08-22
KR20010105318A (ko) 2001-11-28
JP5049427B2 (ja) 2012-10-17
PL348418A1 (en) 2002-05-20
NO20013151D0 (no) 2001-06-22
CN1334914A (zh) 2002-02-06
KR100630916B1 (ko) 2006-10-02
GB9828478D0 (en) 1999-02-17
AU1872000A (en) 2000-07-31
CN1128342C (zh) 2003-11-19
DE69919036T2 (de) 2004-11-25
TW593980B (en) 2004-06-21
WO2000039525A1 (en) 2000-07-06

Similar Documents

Publication Publication Date Title
ATE272206T1 (de) Herstellungsverfahren eines vibrationsstrukturkreisels
ATE449953T1 (de) Drehgeschwindigkeitssensor
DE59914790D1 (de) Integrierter optoelektronischer Sensor und Verfahren zu dessen Herstellung
FR2700065B1 (fr) Procédé de fabrication d'accéléromètres utilisant la technologie silicium sur isolant.
DE59407404D1 (de) Mikromechanische vorrichtung und verfahren zu deren herstellung
WO1997010698A3 (en) Micromechanical sensor with a guard band electrode and fabrication technique therefor
JPS60120389A (ja) マイクロシヤツタを有するデバイスの製法
OA07235A (fr) Méthode de fabrication de silicium à partir de matériaux en poudre contenant de la silice.
JPS59172723A (ja) パタ−ン形成方法
KR890007400A (ko) 트렌치 에칭법
IT1173651B (it) Metodo per l'accrescimento di silicio monocristallino su uno strato di mascheratura
JP3895634B2 (ja) 機能材料の固定化方法
JPS5469090A (en) Manufacture of semiconductor device
FR2764309B1 (fr) Procede de creation d'une couche de silicium sur une surface
EP0318956A3 (de) Positiv arbeitende Photoresistzusammensetzung und Verfahren zur Herstellung von positiven Reliefbildern
ATE272589T1 (de) Oberflächenbeschichteter hartstoff
JPS645489A (en) Functional organic thin film and production thereof
JPS644082A (en) Manufacture of oscillatory type transducer
JPS57130433A (en) Manufacture of single crystal semiconductor thin film
US20020132113A1 (en) Method and system for making a micromachine device with a gas permeable enclosure
JPS5715423A (en) Manufacture of semiconductor device
KR970004478B1 (en) Manufacturing method of semiconductor device
JPS59171124A (ja) ホトレジスト被膜の埋込み方法
JPH01231937A (ja) 単分子膜形成方法
FR2707796B1 (fr) Procédé de gravure sous plasma d'une couche conductrice sur une tranche de silicium avec interposition d'une couche isolante mince.

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties