ATE239308T1 - Oberflächenemittierender laser mit vertikalem hauptresonator (vcsel) und gekoppeltem nichtlichtleitenden nebenresonator - Google Patents
Oberflächenemittierender laser mit vertikalem hauptresonator (vcsel) und gekoppeltem nichtlichtleitenden nebenresonatorInfo
- Publication number
- ATE239308T1 ATE239308T1 AT00963273T AT00963273T ATE239308T1 AT E239308 T1 ATE239308 T1 AT E239308T1 AT 00963273 T AT00963273 T AT 00963273T AT 00963273 T AT00963273 T AT 00963273T AT E239308 T1 ATE239308 T1 AT E239308T1
- Authority
- AT
- Austria
- Prior art keywords
- phase shifting
- region
- resonator
- shifting region
- mirror stack
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
- H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
- H01S2301/166—Single transverse or lateral mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/387,424 US6411638B1 (en) | 1999-08-31 | 1999-08-31 | Coupled cavity anti-guided vertical-cavity surface-emitting laser |
| PCT/US2000/023499 WO2001017078A1 (en) | 1999-08-31 | 2000-08-28 | Coupled cavity anti-guided vertical cavity surface emitting laser (vcsel) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE239308T1 true ATE239308T1 (de) | 2003-05-15 |
Family
ID=23529808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT00963273T ATE239308T1 (de) | 1999-08-31 | 2000-08-28 | Oberflächenemittierender laser mit vertikalem hauptresonator (vcsel) und gekoppeltem nichtlichtleitenden nebenresonator |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6411638B1 (de) |
| EP (1) | EP1208622B1 (de) |
| JP (1) | JP2003508928A (de) |
| KR (1) | KR20020032559A (de) |
| AT (1) | ATE239308T1 (de) |
| AU (1) | AU7471000A (de) |
| DE (1) | DE60002478T2 (de) |
| WO (1) | WO2001017078A1 (de) |
Families Citing this family (69)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6944184B1 (en) * | 1998-12-04 | 2005-09-13 | Tekelec | Methods and systems for providing database node access control functionality in a communications network routing node |
| US6411638B1 (en) * | 1999-08-31 | 2002-06-25 | Honeywell Inc. | Coupled cavity anti-guided vertical-cavity surface-emitting laser |
| KR100708081B1 (ko) * | 2000-05-18 | 2007-04-16 | 삼성전자주식회사 | 선택적 산화법에 의한 표면광 레이저의 어퍼쳐 제조 장치및 방법 |
| US6905900B1 (en) * | 2000-11-28 | 2005-06-14 | Finisar Corporation | Versatile method and system for single mode VCSELs |
| US6990135B2 (en) * | 2002-10-28 | 2006-01-24 | Finisar Corporation | Distributed bragg reflector for optoelectronic device |
| US7065124B2 (en) * | 2000-11-28 | 2006-06-20 | Finlsar Corporation | Electron affinity engineered VCSELs |
| US20030057363A1 (en) * | 2000-12-26 | 2003-03-27 | Anderson Gene R. | Optical power control system |
| US6867377B2 (en) * | 2000-12-26 | 2005-03-15 | Emcore Corporation | Apparatus and method of using flexible printed circuit board in optical transceiver device |
| US6905260B2 (en) | 2000-12-26 | 2005-06-14 | Emcore Corporation | Method and apparatus for coupling optical elements to optoelectronic devices for manufacturing optical transceiver modules |
| US6863444B2 (en) * | 2000-12-26 | 2005-03-08 | Emcore Corporation | Housing and mounting structure |
| US6799902B2 (en) | 2000-12-26 | 2004-10-05 | Emcore Corporation | Optoelectronic mounting structure |
| US7021836B2 (en) * | 2000-12-26 | 2006-04-04 | Emcore Corporation | Attenuator and conditioner |
| US6727520B2 (en) * | 2000-12-29 | 2004-04-27 | Honeywell International Inc. | Spatially modulated reflector for an optoelectronic device |
| US6594294B1 (en) * | 2001-03-07 | 2003-07-15 | Jeff Tsao | Segmented-mirror VCSEL |
| US6611539B2 (en) * | 2001-05-29 | 2003-08-26 | Nsc Nanosemiconductor Gmbh | Wavelength-tunable vertical cavity surface emitting laser and method of making same |
| US7075954B2 (en) * | 2001-05-29 | 2006-07-11 | Nl Nanosemiconductor Gmbh | Intelligent wavelength division multiplexing systems based on arrays of wavelength tunable lasers and wavelength tunable resonant photodetectors |
| US6901099B1 (en) * | 2001-06-29 | 2005-05-31 | Optical Communication Products, Inc. | Antiguide single mode vertical cavity laser |
| GB2377318A (en) * | 2001-07-03 | 2003-01-08 | Mitel Semiconductor Ab | Vertical Cavity Surface Emitting Laser |
| GB2379084B (en) * | 2001-08-24 | 2006-03-29 | Marconi Caswell Ltd | Surface emitting laser |
| KR100475846B1 (ko) * | 2001-12-28 | 2005-03-17 | 주식회사 테라스테이트 | 수직공진형 표면발광 레이저 |
| US6795478B2 (en) * | 2002-03-28 | 2004-09-21 | Applied Optoelectronics, Inc. | VCSEL with antiguide current confinement layer |
| US7656924B2 (en) * | 2002-04-05 | 2010-02-02 | The Furukawa Electric Co., Ltd. | Surface emitting laser, and transceiver, optical transceiver, and optical communication system employing the surface emitting laser |
| US6750071B2 (en) * | 2002-07-06 | 2004-06-15 | Optical Communication Products, Inc. | Method of self-aligning an oxide aperture with an annular intra-cavity contact in a long wavelength VCSEL |
| US6965626B2 (en) * | 2002-09-03 | 2005-11-15 | Finisar Corporation | Single mode VCSEL |
| US6813293B2 (en) * | 2002-11-21 | 2004-11-02 | Finisar Corporation | Long wavelength VCSEL with tunnel junction, and implant |
| US6863453B2 (en) | 2003-01-28 | 2005-03-08 | Emcore Corporation | Method and apparatus for parallel optical transceiver module assembly |
| JP4614040B2 (ja) * | 2003-04-25 | 2011-01-19 | 富士ゼロックス株式会社 | 面発光型半導体レーザおよびその製造方法 |
| US20040222363A1 (en) * | 2003-05-07 | 2004-11-11 | Honeywell International Inc. | Connectorized optical component misalignment detection system |
| US20040247250A1 (en) * | 2003-06-03 | 2004-12-09 | Honeywell International Inc. | Integrated sleeve pluggable package |
| US7298942B2 (en) | 2003-06-06 | 2007-11-20 | Finisar Corporation | Pluggable optical optic system having a lens fiber stop |
| US7433381B2 (en) | 2003-06-25 | 2008-10-07 | Finisar Corporation | InP based long wavelength VCSEL |
| US7277461B2 (en) * | 2003-06-27 | 2007-10-02 | Finisar Corporation | Dielectric VCSEL gain guide |
| US7075962B2 (en) * | 2003-06-27 | 2006-07-11 | Finisar Corporation | VCSEL having thermal management |
| US7054345B2 (en) | 2003-06-27 | 2006-05-30 | Finisar Corporation | Enhanced lateral oxidation |
| US7149383B2 (en) | 2003-06-30 | 2006-12-12 | Finisar Corporation | Optical system with reduced back reflection |
| US6961489B2 (en) | 2003-06-30 | 2005-11-01 | Finisar Corporation | High speed optical system |
| US20060056762A1 (en) * | 2003-07-02 | 2006-03-16 | Honeywell International Inc. | Lens optical coupler |
| US7210857B2 (en) * | 2003-07-16 | 2007-05-01 | Finisar Corporation | Optical coupling system |
| US20050013539A1 (en) * | 2003-07-17 | 2005-01-20 | Honeywell International Inc. | Optical coupling system |
| US6887801B2 (en) * | 2003-07-18 | 2005-05-03 | Finisar Corporation | Edge bead control method and apparatus |
| US7218660B2 (en) | 2003-10-27 | 2007-05-15 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Single-mode vertical cavity surface emitting lasers and methods of making the same |
| US7031363B2 (en) * | 2003-10-29 | 2006-04-18 | Finisar Corporation | Long wavelength VCSEL device processing |
| US20060043278A1 (en) * | 2004-08-30 | 2006-03-02 | Honeywell International Inc. | VCSEL pin sensor |
| US7829912B2 (en) * | 2006-07-31 | 2010-11-09 | Finisar Corporation | Efficient carrier injection in a semiconductor device |
| US7596165B2 (en) * | 2004-08-31 | 2009-09-29 | Finisar Corporation | Distributed Bragg Reflector for optoelectronic device |
| US7920612B2 (en) * | 2004-08-31 | 2011-04-05 | Finisar Corporation | Light emitting semiconductor device having an electrical confinement barrier near the active region |
| US7860137B2 (en) | 2004-10-01 | 2010-12-28 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
| CA2581614A1 (en) | 2004-10-01 | 2006-04-13 | Finisar Corporation | Vertical cavity surface emitting laser having multiple top-side contacts |
| US7102747B2 (en) * | 2004-10-13 | 2006-09-05 | Hewlett-Packard Development Company, L.P. | In situ excitation for Surface Enhanced Raman Spectroscopy |
| JP4515949B2 (ja) * | 2005-03-31 | 2010-08-04 | 株式会社東芝 | 面型光半導体素子 |
| US7321117B2 (en) * | 2005-09-22 | 2008-01-22 | Honeywell International Inc. | Optical particulate sensor in oil quality detection |
| JP5194432B2 (ja) * | 2005-11-30 | 2013-05-08 | 株式会社リコー | 面発光レーザ素子 |
| JP5522490B2 (ja) * | 2005-11-30 | 2014-06-18 | 株式会社リコー | 面発光レーザ素子、それを備えた面発光レーザアレイ、面発光レーザ素子または面発光レーザアレイを備えた電子写真システムおよび面発光レーザ素子または面発光レーザアレイを備えた光通信システム |
| DE102006010727B4 (de) | 2005-12-05 | 2019-10-24 | Osram Opto Semiconductors Gmbh | Oberflächenemittierendes Halbleiterbauelement mit einem Tunnelübergang |
| US8031752B1 (en) | 2007-04-16 | 2011-10-04 | Finisar Corporation | VCSEL optimized for high speed data |
| TWI344709B (en) * | 2007-06-14 | 2011-07-01 | Epistar Corp | Light emitting device |
| JP4974981B2 (ja) * | 2007-09-21 | 2012-07-11 | キヤノン株式会社 | 垂直共振器型面発光レーザ素子、及び該垂直共振器型面発光レーザ素子を用いた画像形成装置 |
| CN102664348B (zh) * | 2007-11-14 | 2014-12-31 | 株式会社理光 | 表面发射激光器及阵列、光学扫描装置、成像设备、光学传输模块和系统 |
| WO2009119172A1 (ja) * | 2008-03-28 | 2009-10-01 | 日本電気株式会社 | 面発光レーザ |
| JP5316783B2 (ja) * | 2008-05-15 | 2013-10-16 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
| GB0817786D0 (en) * | 2008-09-30 | 2008-11-05 | Bookham Technology Plc | Improved vertical cavity surface emitting laser |
| EP2434274A1 (de) * | 2010-09-27 | 2012-03-28 | Stichting IMEC Nederland | Sensor, Verfahren zur Erkennung der Anwesenheit und/oder Konzentration eines Analyten mit dem Sensor und Verwendung des Verfahrens |
| EP2533380B8 (de) * | 2011-06-06 | 2017-08-30 | Mellanox Technologies, Ltd. | Hochgeschwindigkeitslaservorrichtung |
| JP5787025B2 (ja) | 2012-03-02 | 2015-09-30 | 株式会社村田製作所 | 垂直共振面発光レーザ |
| US9124062B2 (en) | 2012-03-22 | 2015-09-01 | Palo Alto Research Center Incorporated | Optically pumped surface emitting lasers incorporating high reflectivity/bandwidth limited reflector |
| US9112331B2 (en) | 2012-03-22 | 2015-08-18 | Palo Alto Research Center Incorporated | Surface emitting laser incorporating third reflector |
| US9112332B2 (en) | 2012-06-14 | 2015-08-18 | Palo Alto Research Center Incorporated | Electron beam pumped vertical cavity surface emitting laser |
| TR201620378A2 (tr) * | 2016-12-30 | 2017-05-22 | Abdullah Demir | Yüzey emisyonlu yarıiletken ışık kaynağının gömülü elektrik ve optik kısıtlama tabakası ile elde edilmesi yöntemi. |
| US11876350B2 (en) | 2020-11-13 | 2024-01-16 | Ii-Vi Delaware, Inc. | Multi-wavelength VCSEL array and method of fabrication |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5283795A (en) * | 1992-04-21 | 1994-02-01 | Hughes Aircraft Company | Diffraction grating driven linear frequency chirped laser |
| US5249195A (en) * | 1992-06-30 | 1993-09-28 | At&T Bell Laboratories | Erbium doped optical devices |
| US5388120A (en) | 1993-09-21 | 1995-02-07 | Motorola, Inc. | VCSEL with unstable resonator |
| US5493577A (en) * | 1994-12-21 | 1996-02-20 | Sandia Corporation | Efficient semiconductor light-emitting device and method |
| US5838715A (en) * | 1996-06-20 | 1998-11-17 | Hewlett-Packard Company | High intensity single-mode VCSELs |
| US5903588A (en) | 1997-03-06 | 1999-05-11 | Honeywell Inc. | Laser with a selectively changed current confining layer |
| US5896408A (en) | 1997-08-15 | 1999-04-20 | Hewlett-Packard Company | Near planar native-oxide VCSEL devices and arrays using converging oxide ringlets |
| JPH11121865A (ja) | 1997-10-08 | 1999-04-30 | Seiko Epson Corp | 面発光レーザ及びその製造方法 |
| FR2783323B1 (fr) * | 1998-09-10 | 2000-10-13 | Suisse Electronique Microtech | Dispositif interferometrique pour relever les caracteristiques de reflexion et/ou de transmission optiques en profondeur d'un objet |
| US6185241B1 (en) * | 1998-10-29 | 2001-02-06 | Xerox Corporation | Metal spatial filter to enhance model reflectivity in a vertical cavity surface emitting laser |
| US6411638B1 (en) * | 1999-08-31 | 2002-06-25 | Honeywell Inc. | Coupled cavity anti-guided vertical-cavity surface-emitting laser |
-
1999
- 1999-08-31 US US09/387,424 patent/US6411638B1/en not_active Expired - Lifetime
-
2000
- 2000-08-28 KR KR1020027002784A patent/KR20020032559A/ko not_active Ceased
- 2000-08-28 JP JP2001520522A patent/JP2003508928A/ja not_active Withdrawn
- 2000-08-28 AU AU74710/00A patent/AU7471000A/en not_active Abandoned
- 2000-08-28 AT AT00963273T patent/ATE239308T1/de active
- 2000-08-28 EP EP00963273A patent/EP1208622B1/de not_active Expired - Lifetime
- 2000-08-28 DE DE60002478T patent/DE60002478T2/de not_active Expired - Lifetime
- 2000-08-28 WO PCT/US2000/023499 patent/WO2001017078A1/en not_active Ceased
-
2002
- 2002-05-13 US US10/147,136 patent/US6678300B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| AU7471000A (en) | 2001-03-26 |
| EP1208622B1 (de) | 2003-05-02 |
| US6678300B2 (en) | 2004-01-13 |
| DE60002478D1 (de) | 2003-06-05 |
| EP1208622A1 (de) | 2002-05-29 |
| JP2003508928A (ja) | 2003-03-04 |
| US6411638B1 (en) | 2002-06-25 |
| DE60002478T2 (de) | 2004-03-18 |
| WO2001017078A1 (en) | 2001-03-08 |
| KR20020032559A (ko) | 2002-05-03 |
| US20020163950A1 (en) | 2002-11-07 |
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| Date | Code | Title | Description |
|---|---|---|---|
| UEP | Publication of translation of european patent specification |
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