ATE211304T1 - Induktiv gekoppelte plasma-reaktoren - Google Patents

Induktiv gekoppelte plasma-reaktoren

Info

Publication number
ATE211304T1
ATE211304T1 AT95304041T AT95304041T ATE211304T1 AT E211304 T1 ATE211304 T1 AT E211304T1 AT 95304041 T AT95304041 T AT 95304041T AT 95304041 T AT95304041 T AT 95304041T AT E211304 T1 ATE211304 T1 AT E211304T1
Authority
AT
Austria
Prior art keywords
coil
coupling
power dissipation
employing
capacitive
Prior art date
Application number
AT95304041T
Other languages
English (en)
Inventor
Gerald Zheyao Yin
Hiroji Hanawa
Diana Xiaobing Ma
Donald Olgado
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of ATE211304T1 publication Critical patent/ATE211304T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • ing And Chemical Polishing (AREA)
AT95304041T 1994-07-18 1995-06-12 Induktiv gekoppelte plasma-reaktoren ATE211304T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/277,531 US5540824A (en) 1994-07-18 1994-07-18 Plasma reactor with multi-section RF coil and isolated conducting lid

Publications (1)

Publication Number Publication Date
ATE211304T1 true ATE211304T1 (de) 2002-01-15

Family

ID=23061269

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95304041T ATE211304T1 (de) 1994-07-18 1995-06-12 Induktiv gekoppelte plasma-reaktoren

Country Status (6)

Country Link
US (1) US5540824A (de)
EP (1) EP0694949B1 (de)
JP (1) JP3929514B2 (de)
KR (1) KR960005832A (de)
AT (1) ATE211304T1 (de)
DE (1) DE69524683T2 (de)

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JP4526540B2 (ja) * 2004-12-28 2010-08-18 株式会社日立国際電気 基板処理装置および基板処理方法
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KR100785401B1 (ko) * 2005-11-04 2007-12-13 세메스 주식회사 유도 결합형 플라즈마 처리 장치
US20070170867A1 (en) * 2006-01-24 2007-07-26 Varian Semiconductor Equipment Associates, Inc. Plasma Immersion Ion Source With Low Effective Antenna Voltage
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JP5572329B2 (ja) * 2009-01-15 2014-08-13 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ生成装置
JP5410950B2 (ja) * 2009-01-15 2014-02-05 株式会社日立ハイテクノロジーズ プラズマ処理装置
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US8970114B2 (en) 2013-02-01 2015-03-03 Lam Research Corporation Temperature controlled window of a plasma processing chamber component
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US10187966B2 (en) * 2015-07-24 2019-01-22 Applied Materials, Inc. Method and apparatus for gas abatement
KR102026880B1 (ko) * 2016-10-13 2019-09-30 에이피시스템 주식회사 기판 처리 장치
CN107256822B (zh) * 2017-07-27 2019-08-23 北京北方华创微电子装备有限公司 上电极组件及反应腔室
CN108770173B (zh) * 2018-07-27 2020-11-20 上海工程技术大学 一种等离子体射流产生装置
WO2020059174A1 (ja) * 2018-09-20 2020-03-26 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法およびプログラム
DE102019213591A1 (de) * 2019-09-06 2021-03-11 Singulus Technologies Ag Behandlungsanlage und plasmabehandlungsverfahren
FR3135732B1 (fr) * 2022-05-17 2024-04-12 Univ Grenoble Alpes Réacteur de dépôt assisté par plasma
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Also Published As

Publication number Publication date
US5540824A (en) 1996-07-30
EP0694949A2 (de) 1996-01-31
DE69524683T2 (de) 2002-08-08
KR960005832A (de) 1996-02-23
DE69524683D1 (de) 2002-01-31
EP0694949B1 (de) 2001-12-19
JP3929514B2 (ja) 2007-06-13
EP0694949A3 (de) 1998-12-16
JPH08213196A (ja) 1996-08-20

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties