ATA3122002A - Einrichtung zur erzeugung von terahertz-strahlung sowie halbleiterbauelement - Google Patents

Einrichtung zur erzeugung von terahertz-strahlung sowie halbleiterbauelement

Info

Publication number
ATA3122002A
ATA3122002A AT0031202A AT3122002A ATA3122002A AT A3122002 A ATA3122002 A AT A3122002A AT 0031202 A AT0031202 A AT 0031202A AT 3122002 A AT3122002 A AT 3122002A AT A3122002 A ATA3122002 A AT A3122002A
Authority
AT
Austria
Prior art keywords
semiconductor component
terahertz radiation
generating terahertz
generating
radiation
Prior art date
Application number
AT0031202A
Other languages
English (en)
Other versions
AT411503B (de
AT411503B8 (de
Original Assignee
Femtolasers Produktions Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to AT0031202A priority Critical patent/AT411503B8/de
Application filed by Femtolasers Produktions Gmbh filed Critical Femtolasers Produktions Gmbh
Priority to US10/505,576 priority patent/US7113534B2/en
Priority to PCT/AT2003/000053 priority patent/WO2003073563A2/de
Priority to EP03704092A priority patent/EP1479137B1/de
Priority to AU2003206491A priority patent/AU2003206491A1/en
Priority to DE50305570T priority patent/DE50305570D1/de
Priority to JP2003572135A priority patent/JP2005519458A/ja
Priority to CNB038047578A priority patent/CN100356640C/zh
Publication of ATA3122002A publication Critical patent/ATA3122002A/de
Publication of AT411503B publication Critical patent/AT411503B/de
Application granted granted Critical
Publication of AT411503B8 publication Critical patent/AT411503B8/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1106—Mode locking
    • H01S3/1112—Passive mode locking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08018—Mode suppression
    • H01S3/08022—Longitudinal modes
    • H01S3/08031—Single-mode emission
    • H01S3/08036—Single-mode emission using intracavity dispersive, polarising or birefringent elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
    • H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
    • H01S3/0811—Construction or shape of optical resonators or components thereof comprising three or more reflectors incorporating a dispersive element, e.g. a prism for wavelength selection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
    • H01S3/0813—Configuration of resonator
    • H01S3/0816—Configuration of resonator having 4 reflectors, e.g. Z-shaped resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/162—Solid materials characterised by an active (lasing) ion transition metal
    • H01S3/1625—Solid materials characterised by an active (lasing) ion transition metal titanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1631—Solid materials characterised by a crystal matrix aluminate
    • H01S3/1636—Al2O3 (Sapphire)

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
AT0031202A 2002-02-28 2002-02-28 Einrichtung zur erzeugung von terahertz-strahlung sowie halbleiterbauelement AT411503B8 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
AT0031202A AT411503B8 (de) 2002-02-28 2002-02-28 Einrichtung zur erzeugung von terahertz-strahlung sowie halbleiterbauelement
PCT/AT2003/000053 WO2003073563A2 (de) 2002-02-28 2003-02-18 Einrichtung zur erzeugung von terahertz-strahlung sowie halbleiterbauelement
EP03704092A EP1479137B1 (de) 2002-02-28 2003-02-18 Einrichtung zur erzeugung von terahertz-strahlung sowie halbleiterbauelement
AU2003206491A AU2003206491A1 (en) 2002-02-28 2003-02-18 Device for generating terahertz radiation, and a semiconductor component
US10/505,576 US7113534B2 (en) 2002-02-28 2003-02-18 Device for generating terahertz radiation, and a semiconductor component
DE50305570T DE50305570D1 (de) 2002-02-28 2003-02-18 Einrichtung zur erzeugung von terahertz-strahlung sowie halbleiterbauelement
JP2003572135A JP2005519458A (ja) 2002-02-28 2003-02-18 テラヘルツ放射線を発生するための装置並びに半導体コンポーネント
CNB038047578A CN100356640C (zh) 2002-02-28 2003-02-18 产生太赫兹辐射的装置以及半导体元件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT0031202A AT411503B8 (de) 2002-02-28 2002-02-28 Einrichtung zur erzeugung von terahertz-strahlung sowie halbleiterbauelement

Publications (3)

Publication Number Publication Date
ATA3122002A true ATA3122002A (de) 2003-06-15
AT411503B AT411503B (de) 2004-01-26
AT411503B8 AT411503B8 (de) 2004-05-25

Family

ID=3671368

Family Applications (1)

Application Number Title Priority Date Filing Date
AT0031202A AT411503B8 (de) 2002-02-28 2002-02-28 Einrichtung zur erzeugung von terahertz-strahlung sowie halbleiterbauelement

Country Status (8)

Country Link
US (1) US7113534B2 (de)
EP (1) EP1479137B1 (de)
JP (1) JP2005519458A (de)
CN (1) CN100356640C (de)
AT (1) AT411503B8 (de)
AU (1) AU2003206491A1 (de)
DE (1) DE50305570D1 (de)
WO (1) WO2003073563A2 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2393260B (en) * 2002-09-19 2004-12-01 Teraview Ltd Antenna Apparatus and Method for operating an Antenna
FR2870386B1 (fr) * 2004-05-17 2006-09-01 Centre Nat Rech Scient Cnrse Emetteur et detecteur de rayonnement electromagnetique.
US7705415B1 (en) 2004-08-12 2010-04-27 Drexel University Optical and electronic devices based on nano-plasma
US7078697B2 (en) * 2004-10-07 2006-07-18 Raytheon Company Thermally powered terahertz radiation source using photonic crystals
DE102006010301B3 (de) * 2006-03-07 2007-06-06 Batop Gmbh Anordnung zur Emission und zum Empfang von Terahertz Strahlung
DE102006010297B3 (de) * 2006-03-07 2007-07-19 Batop Gmbh Photoleitende Terahertz Antenne
CN100421318C (zh) * 2006-06-19 2008-09-24 中国计量学院 半导体激光器的双波长输出光子混频产生太赫兹波的装置
US7440178B2 (en) * 2006-07-03 2008-10-21 Terahertz Technologies, Llc Tunable generation of terahertz radiation
CN100438237C (zh) * 2006-09-29 2008-11-26 华东师范大学 宽带太赫兹光产生器
WO2008121159A2 (en) * 2006-10-19 2008-10-09 Los Alamos National Security Llc Active terahertz metamaterial devices
CN101539017A (zh) * 2008-03-17 2009-09-23 普拉德研究及开发股份有限公司 利用太赫兹辐射的油-水-气分析设备和方法
JP5328265B2 (ja) * 2008-08-25 2013-10-30 キヤノン株式会社 テラヘルツ波発生素子、及びテラヘルツ波発生装置
US8228129B2 (en) * 2008-11-06 2012-07-24 Raytheon Company Photonic crystal resonant defect cavities with nano-scale oscillators for generation of terahertz or infrared radiation
CN101431106B (zh) * 2008-12-05 2012-06-06 中山大学 基于负微分迁移率的平面纳米电磁辐射器结构
US8261557B2 (en) * 2008-12-05 2012-09-11 Raytheon Company Heat transfer devices based on thermodynamic cycling of a photonic crystal with coupled resonant defect cavities
US8508592B2 (en) 2009-02-25 2013-08-13 The University Of Memphis Research Foundation Spatially-selective reflector structures, reflector disks, and systems and methods for use thereof
JP5632911B2 (ja) * 2009-06-03 2014-11-26 コーニンクレッカ フィリップス エヌ ヴェ ＴＨｚ周波数範囲アンテナ
US8563955B2 (en) * 2009-06-12 2013-10-22 Baden-Wurttemberg Stiftung Ggmbh Passive terahertz radiation source
CN101656523B (zh) * 2009-09-07 2011-09-07 浙江大学 三维结构TE011-λ/4-π模谐振器
CN101713687B (zh) * 2009-11-17 2011-03-16 中国科学院上海微系统与信息技术研究所 一种太赫兹波段的无线发射接收装置及其发射接收方法
TWI528062B (zh) * 2010-08-27 2016-04-01 國立臺灣大學 摻鈦藍寶石晶體光纖、其製作方法及其應用之寬頻光源
TWI600931B (zh) * 2010-08-27 2017-10-01 國立臺灣大學 應用摻鈦藍寶石晶體光纖之寬頻光源裝置
US8642964B2 (en) * 2010-08-31 2014-02-04 The United States of America, as represented by the Secretary of Commerce, NIST High repetition rate photoconductive terahertz emitter using a radio frequency bias
JP5799538B2 (ja) * 2011-03-18 2015-10-28 セイコーエプソン株式会社 テラヘルツ波発生装置、カメラ、イメージング装置、計測装置および光源装置
WO2012145741A2 (en) 2011-04-22 2012-10-26 The University Of Memphis Reasearch Foundation Spatially-selective disks, submillimeter imaging devices, methods of submillimeter imaging profiling scanners, spectrometry devices, and methods of spectrometry
US8357919B2 (en) * 2011-05-25 2013-01-22 The Aerospace Corporation Systems, methods, and apparatus for generating terahertz electromagnetic radiation
CN109411564B (zh) * 2017-06-26 2021-10-08 苏州科技大学 宽温带太赫兹波探测器用衬底及其制备方法
JP6955462B2 (ja) * 2018-03-02 2021-10-27 浜松ホトニクス株式会社 光学計測装置及び光学計測方法
DE102018121672A1 (de) * 2018-09-05 2020-03-05 Technische Universität Darmstadt Gunndiode und Verfahren zum Erzeugen einer Terahertzstrahlung
US11888233B2 (en) * 2020-04-07 2024-01-30 Ramot At Tel-Aviv University Ltd Tailored terahertz radiation
US11695249B2 (en) * 2020-12-04 2023-07-04 Electronics And Telecommunications Research Institute Femtosecond pulse laser apparatus

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5109203A (en) * 1986-04-24 1992-04-28 Energy Compression Research Corp. Generated and method for generating microwaves
US5185586A (en) * 1986-04-24 1993-02-09 Energy Compression Research Corp. Method and apparatus for digital synthesis of microwaves
US4782222A (en) * 1987-09-03 1988-11-01 Power Spectra Bulk avalanche semiconductor switch using partial light penetration and inducing field compression
US5332918A (en) * 1988-02-19 1994-07-26 Massachusetts Institute Of Technology Ultra-high-speed photoconductive devices using semi-insulating layers
US5153442A (en) * 1989-06-12 1992-10-06 The United States Of America As Represented By The Secretary Of The Army High power, solid state RF pulse generators
US5146075A (en) * 1991-04-08 1992-09-08 The United States Of America As Represented By The Secretary Of The Army Ligh activated high power integrated pulser
US5148251A (en) * 1991-11-25 1992-09-15 The United States Of America As Represented By The Secretary Of The Army Photoconductive avalanche GaAs switch
US5177486A (en) * 1991-11-25 1993-01-05 The United States Of America As Represented By The Secretary Of The Army Optically activated hybrid pulser with patterned radiating element
US5155352A (en) * 1991-11-25 1992-10-13 The United States Of America As Represented By The Secretary Of The Army Optically activated sub-nanosecond hybrid pulser
US5280168A (en) * 1991-11-25 1994-01-18 The United States Of America As Represented By The Secretary Of The Army Tapered radial transmission line for an optically activated hybrid pulser
US5262657A (en) * 1992-01-24 1993-11-16 The United States Of America As Represented By The Secretary Of The Army Optically activated wafer-scale pulser with AlGaAs epitaxial layer
GB9300627D0 (en) * 1993-01-14 1993-03-03 Hitachi Europ Ltd Terahertz radiation emission and detection
US5432374A (en) * 1993-02-08 1995-07-11 Santa Barbara Research Center Integrated IR and mm-wave detector
US5319218A (en) * 1993-05-06 1994-06-07 The United States Of America As Represented By The Secretary Of The Army Pulse sharpening using an optical pulse
US5283584A (en) * 1993-05-06 1994-02-01 The United States Of America As Represented By The Secrtary Of The Army High power photon triggered ultra-wideband RF radiator with opposite apertures
US5382788A (en) * 1993-07-16 1995-01-17 The United States Of America As Represented By The Secretary Of The Army Monolithic photoconductive bipolar pulsar utilizing a radial transmission line
US5663639A (en) * 1994-01-18 1997-09-02 Massachusetts Institute Of Technology Apparatus and method for optical heterodyne conversion
US5844288A (en) * 1994-07-06 1998-12-01 The Regents Of The University Of Michigan Photoconductive element and method for measuring high frequency signals
USH1717H (en) * 1995-11-16 1998-04-07 The United States Of America As Represented By The Secretary Of The Navy Bistable photoconductive switches particularly suited for frequency-agile, radio-frequency sources
US5729017A (en) * 1996-05-31 1998-03-17 Lucent Technologies Inc. Terahertz generators and detectors
FR2749721B1 (fr) * 1996-06-07 1998-11-27 Thomson Csf Commutateur electrique a photoconducteur
US5940424A (en) * 1996-06-24 1999-08-17 International Business Machines Corporation Semiconductor lasers and method for making the same
US5789750A (en) * 1996-09-09 1998-08-04 Lucent Technologies Inc. Optical system employing terahertz radiation
US5773817A (en) * 1996-09-12 1998-06-30 The United States Of America As Represented By The Secretary Of The Army Ultrafast, high voltage pulser using circumferentially illuminated, laser-switched radial transmission line
JPH11220200A (ja) * 1998-01-30 1999-08-10 Japan Science & Technology Corp 高出力遠赤外光発生方法及びその装置
US6777684B1 (en) * 1999-08-23 2004-08-17 Rose Research L.L.C. Systems and methods for millimeter and sub-millimeter wave imaging
GB2355309B (en) * 1999-09-27 2002-01-09 Toshiba Res Europ Ltd A radiation source
JP4237363B2 (ja) * 1999-11-10 2009-03-11 日本分光株式会社 赤外分光装置
US6400165B1 (en) * 2000-02-02 2002-06-04 Lucent Technologies Inc. Ultra-fast probe
US6344829B1 (en) * 2000-05-11 2002-02-05 Agilent Technologies, Inc. High-isolation, common focus, transmit-receive antenna set
US6407708B1 (en) * 2000-09-01 2002-06-18 The United States Of America As Represented By The Secretary Of The Army Microwave generator/radiator using photoconductive switching and dielectric lens
US6810062B2 (en) * 2001-04-11 2004-10-26 Axsun Technologies, Inc. Passive optical resonator with mirror structure suppressing higher order transverse spatial modes
US7386016B2 (en) * 2003-04-09 2008-06-10 University Of Delaware Terahertz frequency radiation sources and detectors based on group IV materials and method of manufacture

Also Published As

Publication number Publication date
EP1479137B1 (de) 2006-11-02
JP2005519458A (ja) 2005-06-30
US7113534B2 (en) 2006-09-26
AT411503B (de) 2004-01-26
WO2003073563A2 (de) 2003-09-04
EP1479137A2 (de) 2004-11-24
AU2003206491A1 (en) 2003-09-09
CN1639929A (zh) 2005-07-13
CN100356640C (zh) 2007-12-19
AT411503B8 (de) 2004-05-25
DE50305570D1 (de) 2006-12-14
US20050121629A1 (en) 2005-06-09
AU2003206491A8 (en) 2003-09-09
WO2003073563A3 (de) 2004-06-03

Similar Documents

Publication Publication Date Title
AT411503B8 (de) Einrichtung zur erzeugung von terahertz-strahlung sowie halbleiterbauelement
DE602004020538D1 (de) Verfahren und Vorrichtung zur Laserbestrahlung, sowie Verfahren zur Herstellung von Halbleiter.
DE60335738D1 (de) Mehrfach-ausrichteverfahren und vorrichtung
FI20022282A0 (fi) Menetelmä vuorovaikutuksen mahdollistamiseksi elektronisessa laitteessa ja elektroninen laite
DE60237342D1 (de) Elektrooptische Vorrichtung und elektronisches Gerät
DE60234674D1 (de) Verfahren, Program und Gerät zur Authentifizierung
DE60307974D1 (de) Taktgenerator mit spektraler Dispersion Jittergenerator und Halbleitervorrichtung
DE10339915A8 (de) Entwicklungsverfahren, Substratbehandlungsverfahren und Substratsbehandlungseinrichtung
DE60328150D1 (de) System und Methode zur Erzeugung von Anfangs-Vektoren
EP1696526A4 (de) Halbleiterlaserbauelement und herstellungsverfahren dafür
DE60334869D1 (de) Map-matchingsvorrichtung und -verfahren
DE602005010566D1 (de) Halbleiterbauelement und modul damit
DE60328429D1 (de) Schneideverfahren und -vorrichtung
DE60331729D1 (de) Audiocodierungsverfahren und audiocodierungseinrichtung
DE60313843D1 (de) Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
DE60330262D1 (de) Vorrichtung zur erleichterung und authentifizierung von transaktionen
DE602005002160D1 (de) Vorrichtung zur Erzeugung einer verbesserten Referenzspannung und entsprechende integrierte Schaltung
DE602004016956D1 (de) Verdrahtungssubstrat und strahlungsdetektor damit
ITPD20020316A1 (it) Dispositivo e metodo per la creazione di fullereni e/o nanotubi
DE50306271D1 (de) Halbleiterlaservorrichtung
DE60320625D1 (de) Röntgenvorrichtung und Verfahren
DE502005011150D1 (de) Verfahren und Einrichtung zur Erzeugung von Kraft und Wärme
DE50111926D1 (de) Strahlungsanordnung sowie deren Verwendung und Verfahren zur Behandlung von Oberflächen
DE60318988D1 (de) Modulationsgerät und -verfahren
DE60319304D1 (de) Elektronische Vorrichtung und deren Verwendungsverfahren

Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee