AT516990A3 - Verfahren zum Regeln einer Lichtquelle eines Fotolithographie-Belichtungssystems sowie Belichtungsbaugruppe für ein Fotolithographiegerät - Google Patents
Verfahren zum Regeln einer Lichtquelle eines Fotolithographie-Belichtungssystems sowie Belichtungsbaugruppe für ein Fotolithographiegerät Download PDFInfo
- Publication number
- AT516990A3 AT516990A3 ATA50155/2016A AT501552016A AT516990A3 AT 516990 A3 AT516990 A3 AT 516990A3 AT 501552016 A AT501552016 A AT 501552016A AT 516990 A3 AT516990 A3 AT 516990A3
- Authority
- AT
- Austria
- Prior art keywords
- leds
- photolithography
- light source
- exposure
- controlling
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/20—Controlling the colour of the light
- H05B45/22—Controlling the colour of the light using optical feedback
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
- G03F7/70391—Addressable array sources specially adapted to produce patterns, e.g. addressable LED arrays
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
Abstract
Die Erfindung betrifft ein Verfahren zum Regeln einer Lichtquelle eines Fotolithographie-Belichtungssystems, die mehrere LEDs aufweist, mittels der folgenden Schritte: die Lichtleistung der einzelnen LEDs in einem bestimmten Wellenlängenbereich wird erfasst, und die erfasste Lichtleistung wird mit einer Soll-Lichtleistungsverteilung über das gesamte Spektrum verglichen. Die LEDs werden so betrieben, dass die spektrale Soll-Lichtleistungsverteilung möglichst präzise erreicht wird. Die Erfindung betrifft auch eine Belichtungsbaugruppe für ein Fotolithographiegerät, mit einer Lichtquelle, die mehrere LEDs aufweist, einer Steuerung, die die den einzelnen LEDs zugeführte elektrische Leistung steuert, und einem Sensor, der die Lichtleistung der LEDs aufgeschlüsselt nach unterschiedlichen Wellenlängenbereichen erfassen kann.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL2014572A NL2014572B1 (en) | 2015-04-01 | 2015-04-01 | Method for regulating a light source of a photolithography exposure system and exposure assembly for a photolithography device. |
Publications (3)
Publication Number | Publication Date |
---|---|
AT516990A2 AT516990A2 (de) | 2016-10-15 |
AT516990A3 true AT516990A3 (de) | 2019-07-15 |
AT516990B1 AT516990B1 (de) | 2019-11-15 |
Family
ID=53610941
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT501552016A AT516990B1 (de) | 2015-04-01 | 2016-03-01 | Verfahren zum Regeln einer Lichtquelle eines Fotolithographie-Belichtungssystems sowie Belichtungsbaugruppe für ein Fotolithographiegerät |
Country Status (8)
Country | Link |
---|---|
US (1) | US9864277B2 (de) |
JP (1) | JP2016194673A (de) |
KR (1) | KR20160118134A (de) |
CN (1) | CN106054536A (de) |
AT (1) | AT516990B1 (de) |
DE (1) | DE102016106014A1 (de) |
NL (1) | NL2014572B1 (de) |
TW (1) | TWI695229B (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10558125B2 (en) * | 2016-11-17 | 2020-02-11 | Tokyo Electron Limited | Exposure apparatus, exposure apparatus adjustment method and storage medium |
JP6866631B2 (ja) * | 2016-12-20 | 2021-04-28 | 東京エレクトロン株式会社 | 光処理装置、塗布、現像装置、光処理方法及び記憶媒体 |
CN116610007B (zh) * | 2023-07-18 | 2023-10-27 | 上海图双精密装备有限公司 | 掩模对准光刻设备及其照明系统和照明方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070285646A1 (en) * | 2006-06-09 | 2007-12-13 | Canon Kabushiki Kaisha | Exposure apparatus |
US20080111983A1 (en) * | 2005-01-14 | 2008-05-15 | Carl Zeiss Smt Ag | Illumination System for a Microlithographic Projection Exposure Apparatus |
US20090257038A1 (en) * | 2008-04-09 | 2009-10-15 | Canon Kabushiki Kaisha | Exposure apparatus and method of manufacturing device |
US20100045954A1 (en) * | 2008-08-14 | 2010-02-25 | Asml Netherlands B.V. | Controllable radiation lithographic apparatus and method |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7230222B2 (en) * | 2005-08-15 | 2007-06-12 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Calibrated LED light module |
JP2009076688A (ja) * | 2007-09-20 | 2009-04-09 | Canon Inc | 露光装置及びデバイスの製造方法 |
US7671542B2 (en) * | 2007-11-07 | 2010-03-02 | Au Optronics Corporation | Color control of multi-zone LED backlight |
US20100283978A1 (en) * | 2009-05-07 | 2010-11-11 | Ultratech,Inc. | LED-based UV illuminators and lithography systems using same |
US8520186B2 (en) * | 2009-08-25 | 2013-08-27 | Cymer, Llc | Active spectral control of optical source |
KR101898921B1 (ko) * | 2011-11-16 | 2018-09-17 | 삼성디스플레이 주식회사 | 노광 시스템 이를 이용한 패턴 형성 방법 및 표시 기판의 제조 방법 |
US9766275B2 (en) * | 2013-06-04 | 2017-09-19 | Applied Materials, Inc. | Methods and apparatus for increasing accuracy of RMS measurements of signals with a high crest factor |
CN204143154U (zh) * | 2014-10-11 | 2015-02-04 | 叙丰企业股份有限公司 | 曝光机光源照射强度调整机构 |
-
2015
- 2015-04-01 NL NL2014572A patent/NL2014572B1/en not_active IP Right Cessation
-
2016
- 2016-02-02 TW TW105103332A patent/TWI695229B/zh not_active IP Right Cessation
- 2016-02-03 JP JP2016018585A patent/JP2016194673A/ja active Pending
- 2016-02-16 CN CN201610088033.5A patent/CN106054536A/zh active Pending
- 2016-03-01 AT AT501552016A patent/AT516990B1/de not_active IP Right Cessation
- 2016-03-10 US US15/066,676 patent/US9864277B2/en not_active Expired - Fee Related
- 2016-03-23 KR KR1020160034692A patent/KR20160118134A/ko unknown
- 2016-04-01 DE DE102016106014.3A patent/DE102016106014A1/de not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080111983A1 (en) * | 2005-01-14 | 2008-05-15 | Carl Zeiss Smt Ag | Illumination System for a Microlithographic Projection Exposure Apparatus |
US20070285646A1 (en) * | 2006-06-09 | 2007-12-13 | Canon Kabushiki Kaisha | Exposure apparatus |
US20090257038A1 (en) * | 2008-04-09 | 2009-10-15 | Canon Kabushiki Kaisha | Exposure apparatus and method of manufacturing device |
US20100045954A1 (en) * | 2008-08-14 | 2010-02-25 | Asml Netherlands B.V. | Controllable radiation lithographic apparatus and method |
Also Published As
Publication number | Publication date |
---|---|
JP2016194673A (ja) | 2016-11-17 |
KR20160118134A (ko) | 2016-10-11 |
CN106054536A (zh) | 2016-10-26 |
NL2014572A (en) | 2016-10-10 |
US20160291480A1 (en) | 2016-10-06 |
NL2014572B1 (en) | 2017-01-06 |
TWI695229B (zh) | 2020-06-01 |
DE102016106014A1 (de) | 2016-10-06 |
AT516990A2 (de) | 2016-10-15 |
TW201708969A (zh) | 2017-03-01 |
AT516990B1 (de) | 2019-11-15 |
US9864277B2 (en) | 2018-01-09 |
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Effective date: 20210301 |