AT338874B - METHOD OF MANUFACTURING A HOLLOW BODY FROM SEMICONDUCTOR MATERIAL - Google Patents

METHOD OF MANUFACTURING A HOLLOW BODY FROM SEMICONDUCTOR MATERIAL

Info

Publication number
AT338874B
AT338874B AT869470A AT869470A AT338874B AT 338874 B AT338874 B AT 338874B AT 869470 A AT869470 A AT 869470A AT 869470 A AT869470 A AT 869470A AT 338874 B AT338874 B AT 338874B
Authority
AT
Austria
Prior art keywords
manufacturing
semiconductor material
hollow body
hollow
semiconductor
Prior art date
Application number
AT869470A
Other languages
German (de)
Other versions
ATA869470A (en
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of ATA869470A publication Critical patent/ATA869470A/en
Application granted granted Critical
Publication of AT338874B publication Critical patent/AT338874B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
AT869470A 1970-04-06 1970-09-25 METHOD OF MANUFACTURING A HOLLOW BODY FROM SEMICONDUCTOR MATERIAL AT338874B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702016339 DE2016339C3 (en) 1970-04-06 1970-04-06 Method for producing a hollow body from semiconductor material

Publications (2)

Publication Number Publication Date
ATA869470A ATA869470A (en) 1977-01-15
AT338874B true AT338874B (en) 1977-09-26

Family

ID=5767232

Family Applications (1)

Application Number Title Priority Date Filing Date
AT869470A AT338874B (en) 1970-04-06 1970-09-25 METHOD OF MANUFACTURING A HOLLOW BODY FROM SEMICONDUCTOR MATERIAL

Country Status (10)

Country Link
JP (1) JPS5121937B1 (en)
AT (1) AT338874B (en)
CA (1) CA942639A (en)
CH (1) CH537985A (en)
CS (1) CS172916B2 (en)
DE (1) DE2016339C3 (en)
FR (1) FR2092249A5 (en)
GB (1) GB1320416A (en)
NL (1) NL7014606A (en)
SE (1) SE354975B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5331407A (en) * 1976-09-02 1978-03-24 Canon Kk Printer
US4491604A (en) * 1982-12-27 1985-01-01 Lesk Israel A Silicon deposition process
CN111647943A (en) 2012-06-29 2020-09-11 三菱综合材料株式会社 Polycrystalline silicon rod

Also Published As

Publication number Publication date
GB1320416A (en) 1973-06-13
JPS5121937B1 (en) 1976-07-06
NL7014606A (en) 1971-10-08
DE2016339A1 (en) 1971-10-21
CH537985A (en) 1973-06-15
CS172916B2 (en) 1977-01-28
DE2016339B2 (en) 1979-04-19
ATA869470A (en) 1977-01-15
DE2016339C3 (en) 1979-12-13
CA942639A (en) 1974-02-26
SE354975B (en) 1973-04-02
FR2092249A5 (en) 1971-01-21

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