AT334976B - Strahlungsempfindlicher halbleiterdetektor mit oberflachensperrschicht - Google Patents

Strahlungsempfindlicher halbleiterdetektor mit oberflachensperrschicht

Info

Publication number
AT334976B
AT334976B AT505470A AT505470A AT334976B AT 334976 B AT334976 B AT 334976B AT 505470 A AT505470 A AT 505470A AT 505470 A AT505470 A AT 505470A AT 334976 B AT334976 B AT 334976B
Authority
AT
Austria
Prior art keywords
radiation
surface barrier
conductor detector
sensitive semi
semi
Prior art date
Application number
AT505470A
Other languages
English (en)
Other versions
ATA505470A (de
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of ATA505470A publication Critical patent/ATA505470A/de
Application granted granted Critical
Publication of AT334976B publication Critical patent/AT334976B/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
AT505470A 1969-06-09 1970-06-05 Strahlungsempfindlicher halbleiterdetektor mit oberflachensperrschicht AT334976B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR6918945A FR2049382A5 (de) 1969-06-09 1969-06-09

Publications (2)

Publication Number Publication Date
ATA505470A ATA505470A (de) 1976-06-15
AT334976B true AT334976B (de) 1977-02-10

Family

ID=9035380

Family Applications (1)

Application Number Title Priority Date Filing Date
AT505470A AT334976B (de) 1969-06-09 1970-06-05 Strahlungsempfindlicher halbleiterdetektor mit oberflachensperrschicht

Country Status (9)

Country Link
JP (1) JPS483472B1 (de)
AT (1) AT334976B (de)
BE (1) BE751646A (de)
CH (1) CH508989A (de)
DE (1) DE2027948A1 (de)
FR (1) FR2049382A5 (de)
GB (1) GB1312082A (de)
NL (1) NL7008183A (de)
SE (1) SE351322B (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114277776A (zh) * 2022-03-03 2022-04-05 北京恒祥宏业基础加固技术有限公司 一种针对无尘厂房地坪的精准水平抬升加固工艺

Also Published As

Publication number Publication date
FR2049382A5 (de) 1971-03-26
CH508989A (de) 1971-06-15
GB1312082A (en) 1973-04-04
BE751646A (nl) 1970-12-08
NL7008183A (de) 1970-12-11
DE2027948A1 (de) 1971-01-07
ATA505470A (de) 1976-06-15
JPS483472B1 (de) 1973-01-31
SE351322B (de) 1972-11-20

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