AT327291B - Verfahren zum aufbringen einer isolationsschicht aus titanoxyd auf einem halbleiterkorper - Google Patents

Verfahren zum aufbringen einer isolationsschicht aus titanoxyd auf einem halbleiterkorper

Info

Publication number
AT327291B
AT327291B AT102271A AT102271A AT327291B AT 327291 B AT327291 B AT 327291B AT 102271 A AT102271 A AT 102271A AT 102271 A AT102271 A AT 102271A AT 327291 B AT327291 B AT 327291B
Authority
AT
Austria
Prior art keywords
titanoxyde
applying
insulating layer
semiconductor body
semiconductor
Prior art date
Application number
AT102271A
Other languages
English (en)
Other versions
ATA102271A (de
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of ATA102271A publication Critical patent/ATA102271A/de
Application granted granted Critical
Publication of AT327291B publication Critical patent/AT327291B/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
AT102271A 1970-02-13 1971-02-08 Verfahren zum aufbringen einer isolationsschicht aus titanoxyd auf einem halbleiterkorper AT327291B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702006703 DE2006703A1 (de) 1970-02-13 1970-02-13 Isolationsschicht auf einem Halbleiter grundkorper

Publications (2)

Publication Number Publication Date
ATA102271A ATA102271A (de) 1975-04-15
AT327291B true AT327291B (de) 1976-01-26

Family

ID=5762226

Family Applications (1)

Application Number Title Priority Date Filing Date
AT102271A AT327291B (de) 1970-02-13 1971-02-08 Verfahren zum aufbringen einer isolationsschicht aus titanoxyd auf einem halbleiterkorper

Country Status (8)

Country Link
AT (1) AT327291B (de)
CA (1) CA970257A (de)
CH (1) CH522960A (de)
DE (1) DE2006703A1 (de)
FR (1) FR2079406B1 (de)
GB (1) GB1312183A (de)
NL (1) NL7101934A (de)
SE (1) SE365900B (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2188308B1 (de) * 1972-06-02 1977-04-01 Thomson Csf
NL184184C (nl) * 1981-03-20 1989-05-01 Philips Nv Werkwijze voor het aanbrengen van kontaktverhogingen op kontaktplaatsen van een electronische microketen.

Also Published As

Publication number Publication date
FR2079406A1 (de) 1971-11-12
GB1312183A (en) 1973-04-04
NL7101934A (de) 1971-08-17
CA970257A (en) 1975-07-01
FR2079406B1 (de) 1976-10-29
DE2006703A1 (de) 1971-08-26
ATA102271A (de) 1975-04-15
CH522960A (de) 1972-05-15
SE365900B (de) 1974-04-01

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