CH474855A - Verfahren zur Herstellung einer Elektrode auf einer Halbleitervorrichtung - Google Patents

Verfahren zur Herstellung einer Elektrode auf einer Halbleitervorrichtung

Info

Publication number
CH474855A
CH474855A CH420867A CH420867A CH474855A CH 474855 A CH474855 A CH 474855A CH 420867 A CH420867 A CH 420867A CH 420867 A CH420867 A CH 420867A CH 474855 A CH474855 A CH 474855A
Authority
CH
Switzerland
Prior art keywords
electrode
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
CH420867A
Other languages
English (en)
Inventor
Inoue Morio
Kano Gota
Matsuno Jinichi
Takayanagi Shigetoshi
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of CH474855A publication Critical patent/CH474855A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
CH420867A 1965-12-16 1967-03-23 Verfahren zur Herstellung einer Elektrode auf einer Halbleitervorrichtung CH474855A (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP7769065 1965-12-16
JP7769165 1965-12-16
JP7768965 1965-12-16
JP2021066 1966-03-29

Publications (1)

Publication Number Publication Date
CH474855A true CH474855A (de) 1969-06-30

Family

ID=27457338

Family Applications (2)

Application Number Title Priority Date Filing Date
CH1807066A CH456775A (de) 1965-12-16 1966-12-15 Verfahren zur Herstellung eines Halbleiter-Elementes, Vorrichtung zur Durchführung dieses Verfahrens und nach dem Verfahren hergestelltes Halbleiterelement
CH420867A CH474855A (de) 1965-12-16 1967-03-23 Verfahren zur Herstellung einer Elektrode auf einer Halbleitervorrichtung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CH1807066A CH456775A (de) 1965-12-16 1966-12-15 Verfahren zur Herstellung eines Halbleiter-Elementes, Vorrichtung zur Durchführung dieses Verfahrens und nach dem Verfahren hergestelltes Halbleiterelement

Country Status (8)

Country Link
US (2) US3519479A (de)
BE (4) BE691293A (de)
CH (2) CH456775A (de)
DE (2) DE1521396B1 (de)
FR (3) FR1505701A (de)
GB (2) GB1172230A (de)
NL (2) NL148654B (de)
SE (2) SE338763B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3141567A1 (de) * 1981-10-20 1983-05-11 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von schichten aus hochschmelzenden metallen bei niedrigen substrattemperaturen

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3675619A (en) * 1969-02-25 1972-07-11 Monsanto Co Apparatus for production of epitaxial films
US3642526A (en) * 1969-03-06 1972-02-15 Hitachi Ltd Semiconductor surface barrier diode of schottky type and method of making same
US3664874A (en) * 1969-12-31 1972-05-23 Nasa Tungsten contacts on silicon substrates
US3754168A (en) * 1970-03-09 1973-08-21 Texas Instruments Inc Metal contact and interconnection system for nonhermetic enclosed semiconductor devices
DE2025779C3 (de) * 1970-05-26 1980-11-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Abscheiden einer Schicht aus einer binären Verbindung an der Oberfläche eines Halbleiterkristalls
CH506188A (de) * 1970-09-02 1971-04-15 Ibm Feldeffekt-Transistor
US3841904A (en) * 1972-12-11 1974-10-15 Rca Corp Method of making a metal silicide-silicon schottky barrier
JPS5234039B2 (de) * 1973-06-04 1977-09-01
US3857169A (en) * 1973-06-21 1974-12-31 Univ Southern California Method of making junction diodes
FR2351064A1 (fr) * 1976-05-12 1977-12-09 France Etat Procede et equipement d'elaboration de preformes pour fibres optiques
US4794019A (en) * 1980-09-04 1988-12-27 Applied Materials, Inc. Refractory metal deposition process
US4871617A (en) * 1984-04-02 1989-10-03 General Electric Company Ohmic contacts and interconnects to silicon and method of making same
US4584207A (en) * 1984-09-24 1986-04-22 General Electric Company Method for nucleating and growing tungsten films
GB8620273D0 (en) * 1986-08-20 1986-10-01 Gen Electric Co Plc Deposition of thin films
GB2196019A (en) * 1986-10-07 1988-04-20 Cambridge Instr Ltd Metalorganic chemical vapour deposition
US4830982A (en) * 1986-12-16 1989-05-16 American Telephone And Telegraph Company Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors
US4782034A (en) * 1987-06-04 1988-11-01 American Telephone And Telegraph Company, At&T Bell Laboratories Semi-insulating group III-V based compositions doped using bis arene titanium sources
EP1069610A2 (de) * 1990-01-08 2001-01-17 Lsi Logic Corporation Verfahren zur Abscheidung von feuerfesten Metallen mit niedrigem Kontaktwiderstand, und entsprechende Vorrichtung
US5180432A (en) * 1990-01-08 1993-01-19 Lsi Logic Corporation Apparatus for conducting a refractory metal deposition process

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1172923B (de) * 1958-03-04 1964-06-25 Union Carbide Corp Verfahren zur Herstellung von Metall-gegenstaenden beliebiger Form durch Aufbringen duenner Lagen von Metallauf eine zu entfernende Formunterlage
US2973466A (en) * 1959-09-09 1961-02-28 Bell Telephone Labor Inc Semiconductor contact
US3072983A (en) * 1960-05-31 1963-01-15 Brenner Abner Vapor deposition of tungsten
US3188230A (en) * 1961-03-16 1965-06-08 Alloyd Corp Vapor deposition process and device
US3139658A (en) * 1961-12-08 1964-07-07 Brenner Abner Production of tungsten objects
US3349297A (en) * 1964-06-23 1967-10-24 Bell Telephone Labor Inc Surface barrier semiconductor translating device
DE1289188B (de) * 1964-12-15 1969-02-13 Telefunken Patent Metallbasistransistor
US3406050A (en) * 1965-08-04 1968-10-15 Texas Instruments Inc Method of making electrical contact to a semiconductor body

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3141567A1 (de) * 1981-10-20 1983-05-11 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von schichten aus hochschmelzenden metallen bei niedrigen substrattemperaturen

Also Published As

Publication number Publication date
BE696172A (de) 1967-09-01
FR1505766A (fr) 1967-12-15
GB1173330A (en) 1969-12-10
US3480475A (en) 1969-11-25
FR1505147A (fr) 1967-12-08
BE691293A (de) 1967-05-16
DE1614148A1 (de) 1971-03-25
FR1505701A (fr) 1967-12-15
US3519479A (en) 1970-07-07
GB1172230A (en) 1969-11-26
DE1521396B1 (de) 1971-12-30
NL6704405A (de) 1967-10-02
DE1614148B2 (de) 1971-10-21
BE691295A (de) 1967-05-16
CH456775A (de) 1968-07-31
BE691294A (de) 1967-05-16
NL149859B (nl) 1976-06-15
NL6617676A (de) 1967-06-19
SE320434B (de) 1970-02-09
SE338763B (de) 1971-09-20
NL148654B (nl) 1976-02-16

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