AT301620B - Verfahren zum herstellen einer photolackmaske fuer halbleiterzwecke - Google Patents

Verfahren zum herstellen einer photolackmaske fuer halbleiterzwecke

Info

Publication number
AT301620B
AT301620B AT10251/68A AT1025168A AT301620B AT 301620 B AT301620 B AT 301620B AT 10251/68 A AT10251/68 A AT 10251/68A AT 1025168 A AT1025168 A AT 1025168A AT 301620 B AT301620 B AT 301620B
Authority
AT
Austria
Prior art keywords
semiconductive
photo
purposes
manufacturing
lacquer mask
Prior art date
Application number
AT10251/68A
Other languages
German (de)
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT301620B publication Critical patent/AT301620B/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Electron Beam Exposure (AREA)
AT10251/68A 1967-10-23 1967-10-23 Verfahren zum herstellen einer photolackmaske fuer halbleiterzwecke AT301620B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0112516 1967-10-23

Publications (1)

Publication Number Publication Date
AT301620B true AT301620B (de) 1972-08-15

Family

ID=7531832

Family Applications (1)

Application Number Title Priority Date Filing Date
AT10251/68A AT301620B (de) 1967-10-23 1967-10-23 Verfahren zum herstellen einer photolackmaske fuer halbleiterzwecke

Country Status (8)

Country Link
US (1) US3607382A (xx)
AT (1) AT301620B (xx)
CH (1) CH485327A (xx)
DE (1) DE1614635A1 (xx)
FR (1) FR1589571A (xx)
GB (1) GB1230469A (xx)
NL (1) NL6813891A (xx)
SE (1) SE331315B (xx)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1328803A (en) * 1969-12-17 1973-09-05 Mullard Ltd Methods of manufacturing semiconductor devices
US3779806A (en) * 1972-03-24 1973-12-18 Ibm Electron beam sensitive polymer t-butyl methacrylate resist
US3840749A (en) * 1973-06-19 1974-10-08 Westinghouse Electric Corp Method and apparatus for electron beam alignment with a semiconductor member
US3900737A (en) * 1974-04-18 1975-08-19 Bell Telephone Labor Inc Electron beam exposure system
US4035522A (en) * 1974-07-19 1977-07-12 International Business Machines Corporation X-ray lithography mask
FR2294489A1 (fr) * 1974-12-13 1976-07-09 Thomson Csf Dispositif pour le trace programme de dessins par bombardement de particules
GB2066487B (en) * 1979-12-18 1983-11-23 Philips Electronic Associated Alignment of exposure masks
US4576884A (en) * 1984-06-14 1986-03-18 Microelectronics Center Of North Carolina Method and apparatus for exposing photoresist by using an electron beam and controlling its voltage and charge
AT391224B (de) * 1988-01-26 1990-09-10 Thallner Erich Belichtungseinrichtung fuer lichtempfindlich gemachte substrate

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3330696A (en) * 1967-07-11 Method of fabricating thin film capacitors
US2705764A (en) * 1950-02-25 1955-04-05 Rca Corp Dual-area target electrodes and methods of making the same
US2968723A (en) * 1957-04-11 1961-01-17 Zeiss Carl Means for controlling crystal structure of materials
US3113896A (en) * 1961-01-31 1963-12-10 Space Technology Lab Inc Electron beam masking for etching electrical circuits
NL297262A (xx) * 1962-09-04
NL294370A (xx) * 1963-06-20
US3364087A (en) * 1964-04-27 1968-01-16 Varian Associates Method of using laser to coat or etch substrate
US3388000A (en) * 1964-09-18 1968-06-11 Texas Instruments Inc Method of forming a metal contact on a semiconductor device
US3326176A (en) * 1964-10-27 1967-06-20 Nat Res Corp Work-registration device including ionic beam probe

Also Published As

Publication number Publication date
DE1614635A1 (de) 1970-03-26
US3607382A (en) 1971-09-21
GB1230469A (xx) 1971-05-05
CH485327A (de) 1970-01-31
FR1589571A (xx) 1970-03-31
NL6813891A (xx) 1969-04-25
SE331315B (xx) 1970-12-21

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee