AT293813B - Verfahren zum Abscheiden einer hochschmelzenden Kontaktmetallschicht bei niedrigen Temperaturen - Google Patents
Verfahren zum Abscheiden einer hochschmelzenden Kontaktmetallschicht bei niedrigen TemperaturenInfo
- Publication number
- AT293813B AT293813B AT1208669A AT1208669A AT293813B AT 293813 B AT293813 B AT 293813B AT 1208669 A AT1208669 A AT 1208669A AT 1208669 A AT1208669 A AT 1208669A AT 293813 B AT293813 B AT 293813B
- Authority
- AT
- Austria
- Prior art keywords
- deposition
- metal layer
- low temperatures
- contact metal
- melting contact
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19691900119 DE1900119B2 (de) | 1969-01-02 | 1969-01-02 | Verfahren zum abscheiden hochschmelzender kontaktmetallschichten bei niedrigen temperaturen |
Publications (1)
Publication Number | Publication Date |
---|---|
AT293813B true AT293813B (de) | 1971-10-25 |
Family
ID=5721667
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT1208669A AT293813B (de) | 1969-01-02 | 1969-12-29 | Verfahren zum Abscheiden einer hochschmelzenden Kontaktmetallschicht bei niedrigen Temperaturen |
Country Status (9)
Country | Link |
---|---|
US (1) | US3619288A (xx) |
JP (1) | JPS4822886B1 (xx) |
AT (1) | AT293813B (xx) |
CH (1) | CH550862A (xx) |
DE (1) | DE1900119B2 (xx) |
FR (1) | FR2027649A1 (xx) |
GB (1) | GB1251631A (xx) |
NL (1) | NL6915312A (xx) |
SE (1) | SE341864B (xx) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2929630C2 (de) * | 1979-07-21 | 1983-12-15 | Dornier System Gmbh, 7990 Friedrichshafen | Verfahren zur Herstellung von Silberpulver |
US4817557A (en) * | 1983-05-23 | 1989-04-04 | Anicon, Inc. | Process and apparatus for low pressure chemical vapor deposition of refractory metal |
US4619840A (en) * | 1983-05-23 | 1986-10-28 | Thermco Systems, Inc. | Process and apparatus for low pressure chemical vapor deposition of refractory metal |
JPS6050920A (ja) * | 1983-08-30 | 1985-03-22 | Toshiba Corp | 半導体装置の製造方法 |
US4478890A (en) * | 1983-09-12 | 1984-10-23 | The United States Of America As Represented By The Secretary Of The Navy | Low temperature deposition of nickel films |
JPS6164344U (xx) * | 1984-09-29 | 1986-05-01 | ||
JPS6265754A (ja) * | 1985-09-18 | 1987-03-25 | 富士ゼロツクスオフイスサプライ株式会社 | 細断機 |
EP0241155B1 (en) * | 1986-03-31 | 1990-03-28 | Unisys Corporation | Depositing vanadium underlayer for magnetic films |
US4668528A (en) * | 1986-04-09 | 1987-05-26 | Massachusetts Institute Of Technology | Method and apparatus for photodeposition of films on surfaces |
US4868005A (en) * | 1986-04-09 | 1989-09-19 | Massachusetts Institute Of Technology | Method and apparatus for photodeposition of films on surfaces |
US4748045A (en) * | 1986-04-09 | 1988-05-31 | Massachusetts Institute Of Technology | Method and apparatus for photodeposition of films on surfaces |
GB8620273D0 (en) * | 1986-08-20 | 1986-10-01 | Gen Electric Co Plc | Deposition of thin films |
US4830982A (en) * | 1986-12-16 | 1989-05-16 | American Telephone And Telegraph Company | Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors |
US4782034A (en) * | 1987-06-04 | 1988-11-01 | American Telephone And Telegraph Company, At&T Bell Laboratories | Semi-insulating group III-V based compositions doped using bis arene titanium sources |
EP0338206A1 (de) * | 1988-03-24 | 1989-10-25 | Siemens Aktiengesellschaft | Verfahren zum konformen Abscheiden von Wolfram auf Halbleitersubstrate bei der Herstellung von höchstintegrierten Schaltungen |
EP0349696A1 (en) * | 1988-07-08 | 1990-01-10 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method of depositing metal on an aluminium substrate |
EP0355296A3 (de) * | 1988-08-18 | 1991-01-02 | Siemens Aktiengesellschaft | CVD-taugliche Wolframhalogenphosphankomplexverbindungen sowie Verfahren zu ihrer Herstellung |
DE4023883A1 (de) * | 1990-07-27 | 1992-01-30 | Kali Chemie Ag | Verfahren zur abscheidung von uebergangsmetall enthaltenden schichten |
US5320978A (en) * | 1993-07-30 | 1994-06-14 | The United States Of America As Represented By The Secretary Of The Navy | Selective area platinum film deposition |
US6087704A (en) | 1997-09-30 | 2000-07-11 | National Science Council | Structure and method for manufacturing group III-V composite Schottky contacts enhanced by a sulphur fluoride/phosphorus fluoride layer |
JP4860176B2 (ja) * | 2005-05-02 | 2012-01-25 | 株式会社トリケミカル研究所 | Ni(PF3)4の製造方法 |
FR3108920B1 (fr) | 2020-04-07 | 2022-07-22 | Commissariat Energie Atomique | Procede de depot d’un film metallique de tungstene ou de molybdene par ald |
-
1969
- 1969-01-02 DE DE19691900119 patent/DE1900119B2/de active Pending
- 1969-10-09 NL NL6915312A patent/NL6915312A/xx unknown
- 1969-12-18 CH CH1880269A patent/CH550862A/xx not_active IP Right Cessation
- 1969-12-22 US US886946A patent/US3619288A/en not_active Expired - Lifetime
- 1969-12-26 JP JP44104498A patent/JPS4822886B1/ja active Pending
- 1969-12-29 AT AT1208669A patent/AT293813B/de not_active IP Right Cessation
- 1969-12-30 FR FR6945428A patent/FR2027649A1/fr not_active Withdrawn
-
1970
- 1970-01-01 GB GB1251631D patent/GB1251631A/en not_active Expired
- 1970-01-02 SE SE46/70A patent/SE341864B/xx unknown
Also Published As
Publication number | Publication date |
---|---|
JPS4822886B1 (xx) | 1973-07-10 |
NL6915312A (xx) | 1970-07-06 |
FR2027649A1 (xx) | 1970-10-02 |
US3619288A (en) | 1971-11-09 |
GB1251631A (xx) | 1971-10-27 |
CH550862A (de) | 1974-06-28 |
DE1900119B2 (de) | 1977-06-30 |
DE1900119A1 (de) | 1970-08-13 |
SE341864B (xx) | 1972-01-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ELJ | Ceased due to non-payment of the annual fee |