AT270748B - Injektionsstrahlungsquelle mit zinkdotiertem Galliumphosphid und Verfahren zu deren Herstellung - Google Patents

Injektionsstrahlungsquelle mit zinkdotiertem Galliumphosphid und Verfahren zu deren Herstellung

Info

Publication number
AT270748B
AT270748B AT785265A AT785265A AT270748B AT 270748 B AT270748 B AT 270748B AT 785265 A AT785265 A AT 785265A AT 785265 A AT785265 A AT 785265A AT 270748 B AT270748 B AT 270748B
Authority
AT
Austria
Prior art keywords
zinc
production
radiation source
gallium phosphide
doped gallium
Prior art date
Application number
AT785265A
Other languages
German (de)
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of AT270748B publication Critical patent/AT270748B/de

Links

Classifications

    • H10P95/00—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10W72/07552—
    • H10W72/522—
    • H10W72/527—
    • H10W72/536—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Catalysts (AREA)
  • Led Devices (AREA)
AT785265A 1964-08-29 1965-08-26 Injektionsstrahlungsquelle mit zinkdotiertem Galliumphosphid und Verfahren zu deren Herstellung AT270748B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6410080A NL6410080A (enExample) 1964-08-29 1964-08-29

Publications (1)

Publication Number Publication Date
AT270748B true AT270748B (de) 1969-05-12

Family

ID=19790909

Family Applications (1)

Application Number Title Priority Date Filing Date
AT785265A AT270748B (de) 1964-08-29 1965-08-26 Injektionsstrahlungsquelle mit zinkdotiertem Galliumphosphid und Verfahren zu deren Herstellung

Country Status (8)

Country Link
US (1) US3394085A (enExample)
AT (1) AT270748B (enExample)
BE (1) BE668878A (enExample)
CH (1) CH477915A (enExample)
DE (1) DE1272452B (enExample)
GB (1) GB1043689A (enExample)
NL (1) NL6410080A (enExample)
SE (1) SE321298B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3549401A (en) * 1966-12-20 1970-12-22 Ibm Method of making electroluminescent gallium phosphide diodes
CA920280A (en) * 1970-11-16 1973-01-30 Omron Tateisi Electronics Co. Semiconductive transducer
JP2698891B2 (ja) * 1992-11-07 1998-01-19 信越半導体株式会社 ＧａＰ系発光素子基板

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT228858B (de) * 1961-02-07 1963-08-12 Philips Nv Elektro-optische Halbleitervorrichtung
US3293513A (en) * 1962-08-08 1966-12-20 Texas Instruments Inc Semiconductor radiant diode
US3290539A (en) * 1963-09-16 1966-12-06 Rca Corp Planar p-nu junction light source with reflector means to collimate the emitted light

Also Published As

Publication number Publication date
GB1043689A (en) 1966-09-21
SE321298B (enExample) 1970-03-02
US3394085A (en) 1968-07-23
BE668878A (enExample) 1966-02-28
CH477915A (de) 1969-09-15
DE1272452B (de) 1968-07-11
NL6410080A (enExample) 1966-03-01

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