NL6410080A - - Google Patents

Info

Publication number
NL6410080A
NL6410080A NL6410080A NL6410080A NL6410080A NL 6410080 A NL6410080 A NL 6410080A NL 6410080 A NL6410080 A NL 6410080A NL 6410080 A NL6410080 A NL 6410080A NL 6410080 A NL6410080 A NL 6410080A
Authority
NL
Netherlands
Application number
NL6410080A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL6410080A priority Critical patent/NL6410080A/xx
Priority to US479556A priority patent/US3394085A/en
Priority to DEP1272A priority patent/DE1272452B/de
Priority to GB36653/65A priority patent/GB1043689A/en
Priority to SE11160/65A priority patent/SE321298B/xx
Priority to AT785265A priority patent/AT270748B/de
Priority to CH1199365A priority patent/CH477915A/de
Priority to FR29697A priority patent/FR1445408A/fr
Priority to BE668878A priority patent/BE668878A/xx
Publication of NL6410080A publication Critical patent/NL6410080A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45565Single coating layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901Structure
    • H01L2224/4903Connectors having different sizes, e.g. different diameters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/107Melt

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Catalysts (AREA)
NL6410080A 1964-08-29 1964-08-29 NL6410080A (xx)

Priority Applications (9)

Application Number Priority Date Filing Date Title
NL6410080A NL6410080A (xx) 1964-08-29 1964-08-29
US479556A US3394085A (en) 1964-08-29 1965-08-13 Methods of producing zinc-doped gallium phosphide
DEP1272A DE1272452B (de) 1964-08-29 1965-08-25 Halbleiterstrahlungsquelle aus zinkdotiertem Galliumphosphid und Verfahren zu ihrer Herstellung
GB36653/65A GB1043689A (en) 1964-08-29 1965-08-26 Improvements in and relating to zinc-doped gallium phosphide
SE11160/65A SE321298B (xx) 1964-08-29 1965-08-26
AT785265A AT270748B (de) 1964-08-29 1965-08-26 Injektionsstrahlungsquelle mit zinkdotiertem Galliumphosphid und Verfahren zu deren Herstellung
CH1199365A CH477915A (de) 1964-08-29 1965-08-26 Verfahren zur Herstellung zinkdotierten Galliumphosphids und Verwendung von nach dem Verfahren hergestelltem Galliumphosphid zur Herstellung einer Injektionsstrahlungsquelle
FR29697A FR1445408A (fr) 1964-08-29 1965-08-27 Source de rayonnement de recombinaison à injection
BE668878A BE668878A (xx) 1964-08-29 1965-08-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6410080A NL6410080A (xx) 1964-08-29 1964-08-29

Publications (1)

Publication Number Publication Date
NL6410080A true NL6410080A (xx) 1966-03-01

Family

ID=19790909

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6410080A NL6410080A (xx) 1964-08-29 1964-08-29

Country Status (8)

Country Link
US (1) US3394085A (xx)
AT (1) AT270748B (xx)
BE (1) BE668878A (xx)
CH (1) CH477915A (xx)
DE (1) DE1272452B (xx)
GB (1) GB1043689A (xx)
NL (1) NL6410080A (xx)
SE (1) SE321298B (xx)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3549401A (en) * 1966-12-20 1970-12-22 Ibm Method of making electroluminescent gallium phosphide diodes
CA920280A (en) * 1970-11-16 1973-01-30 Omron Tateisi Electronics Co. Semiconductive transducer
JP2698891B2 (ja) * 1992-11-07 1998-01-19 信越半導体株式会社 GaP系発光素子基板

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT228858B (de) * 1961-02-07 1963-08-12 Philips Nv Elektro-optische Halbleitervorrichtung
US3293513A (en) * 1962-08-08 1966-12-20 Texas Instruments Inc Semiconductor radiant diode
US3290539A (en) * 1963-09-16 1966-12-06 Rca Corp Planar p-nu junction light source with reflector means to collimate the emitted light

Also Published As

Publication number Publication date
US3394085A (en) 1968-07-23
DE1272452B (de) 1968-07-11
GB1043689A (en) 1966-09-21
BE668878A (xx) 1966-02-28
CH477915A (de) 1969-09-15
SE321298B (xx) 1970-03-02
AT270748B (de) 1969-05-12

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