CH477915A - Verfahren zur Herstellung zinkdotierten Galliumphosphids und Verwendung von nach dem Verfahren hergestelltem Galliumphosphid zur Herstellung einer Injektionsstrahlungsquelle - Google Patents
Verfahren zur Herstellung zinkdotierten Galliumphosphids und Verwendung von nach dem Verfahren hergestelltem Galliumphosphid zur Herstellung einer InjektionsstrahlungsquelleInfo
- Publication number
- CH477915A CH477915A CH1199365A CH1199365A CH477915A CH 477915 A CH477915 A CH 477915A CH 1199365 A CH1199365 A CH 1199365A CH 1199365 A CH1199365 A CH 1199365A CH 477915 A CH477915 A CH 477915A
- Authority
- CH
- Switzerland
- Prior art keywords
- gallium phosphide
- producing
- radiation source
- produced
- zinc
- Prior art date
Links
- 229910005540 GaP Inorganic materials 0.000 title 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 title 2
- 238000000034 method Methods 0.000 title 2
- 238000002347 injection Methods 0.000 title 1
- 239000007924 injection Substances 0.000 title 1
- 230000005855 radiation Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/4901—Structure
- H01L2224/4903—Connectors having different sizes, e.g. different diameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
- Catalysts (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6410080A NL6410080A (de) | 1964-08-29 | 1964-08-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH477915A true CH477915A (de) | 1969-09-15 |
Family
ID=19790909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1199365A CH477915A (de) | 1964-08-29 | 1965-08-26 | Verfahren zur Herstellung zinkdotierten Galliumphosphids und Verwendung von nach dem Verfahren hergestelltem Galliumphosphid zur Herstellung einer Injektionsstrahlungsquelle |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3394085A (de) |
| AT (1) | AT270748B (de) |
| BE (1) | BE668878A (de) |
| CH (1) | CH477915A (de) |
| DE (1) | DE1272452B (de) |
| GB (1) | GB1043689A (de) |
| NL (1) | NL6410080A (de) |
| SE (1) | SE321298B (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3549401A (en) * | 1966-12-20 | 1970-12-22 | Ibm | Method of making electroluminescent gallium phosphide diodes |
| CA920280A (en) * | 1970-11-16 | 1973-01-30 | Omron Tateisi Electronics Co. | Semiconductive transducer |
| JP2698891B2 (ja) * | 1992-11-07 | 1998-01-19 | 信越半導体株式会社 | ＧａＰ系発光素子基板 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT228858B (de) * | 1961-02-07 | 1963-08-12 | Philips Nv | Elektro-optische Halbleitervorrichtung |
| US3293513A (en) * | 1962-08-08 | 1966-12-20 | Texas Instruments Inc | Semiconductor radiant diode |
| US3290539A (en) * | 1963-09-16 | 1966-12-06 | Rca Corp | Planar p-nu junction light source with reflector means to collimate the emitted light |
-
1964
- 1964-08-29 NL NL6410080A patent/NL6410080A/xx unknown
-
1965
- 1965-08-13 US US479556A patent/US3394085A/en not_active Expired - Lifetime
- 1965-08-25 DE DEP1272A patent/DE1272452B/de active Pending
- 1965-08-26 SE SE11160/65A patent/SE321298B/xx unknown
- 1965-08-26 CH CH1199365A patent/CH477915A/de not_active IP Right Cessation
- 1965-08-26 GB GB36653/65A patent/GB1043689A/en not_active Expired
- 1965-08-26 AT AT785265A patent/AT270748B/de active
- 1965-08-27 BE BE668878A patent/BE668878A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| BE668878A (de) | 1966-02-28 |
| GB1043689A (en) | 1966-09-21 |
| AT270748B (de) | 1969-05-12 |
| NL6410080A (de) | 1966-03-01 |
| SE321298B (de) | 1970-03-02 |
| DE1272452B (de) | 1968-07-11 |
| US3394085A (en) | 1968-07-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |