FR1445408A - Source de rayonnement de recombinaison à injection - Google Patents

Source de rayonnement de recombinaison à injection

Info

Publication number
FR1445408A
FR1445408A FR29697A FR29697A FR1445408A FR 1445408 A FR1445408 A FR 1445408A FR 29697 A FR29697 A FR 29697A FR 29697 A FR29697 A FR 29697A FR 1445408 A FR1445408 A FR 1445408A
Authority
FR
France
Prior art keywords
radiation source
injection radiation
recombinant
recombinant injection
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR29697A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL6410080A external-priority patent/NL6410080A/xx
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Priority to FR29697A priority Critical patent/FR1445408A/fr
Application granted granted Critical
Publication of FR1445408A publication Critical patent/FR1445408A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
FR29697A 1964-08-29 1965-08-27 Source de rayonnement de recombinaison à injection Expired FR1445408A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR29697A FR1445408A (fr) 1964-08-29 1965-08-27 Source de rayonnement de recombinaison à injection

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL6410080A NL6410080A (fr) 1964-08-29 1964-08-29
FR29697A FR1445408A (fr) 1964-08-29 1965-08-27 Source de rayonnement de recombinaison à injection

Publications (1)

Publication Number Publication Date
FR1445408A true FR1445408A (fr) 1966-07-08

Family

ID=26165763

Family Applications (1)

Application Number Title Priority Date Filing Date
FR29697A Expired FR1445408A (fr) 1964-08-29 1965-08-27 Source de rayonnement de recombinaison à injection

Country Status (1)

Country Link
FR (1) FR1445408A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5349208A (en) * 1992-11-07 1994-09-20 Shin Etsu Handotai Kabushiki Kaisha GaP light emitting element substrate with oxygen doped buffer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5349208A (en) * 1992-11-07 1994-09-20 Shin Etsu Handotai Kabushiki Kaisha GaP light emitting element substrate with oxygen doped buffer

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