AT270748B - Injection radiation source with zinc-doped gallium phosphide and process for their production - Google Patents

Injection radiation source with zinc-doped gallium phosphide and process for their production

Info

Publication number
AT270748B
AT270748B AT785265A AT785265A AT270748B AT 270748 B AT270748 B AT 270748B AT 785265 A AT785265 A AT 785265A AT 785265 A AT785265 A AT 785265A AT 270748 B AT270748 B AT 270748B
Authority
AT
Austria
Prior art keywords
zinc
production
radiation source
gallium phosphide
doped gallium
Prior art date
Application number
AT785265A
Other languages
German (de)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of AT270748B publication Critical patent/AT270748B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45565Single coating layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901Structure
    • H01L2224/4903Connectors having different sizes, e.g. different diameters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/107Melt

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Catalysts (AREA)
AT785265A 1964-08-29 1965-08-26 Injection radiation source with zinc-doped gallium phosphide and process for their production AT270748B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6410080A NL6410080A (en) 1964-08-29 1964-08-29

Publications (1)

Publication Number Publication Date
AT270748B true AT270748B (en) 1969-05-12

Family

ID=19790909

Family Applications (1)

Application Number Title Priority Date Filing Date
AT785265A AT270748B (en) 1964-08-29 1965-08-26 Injection radiation source with zinc-doped gallium phosphide and process for their production

Country Status (8)

Country Link
US (1) US3394085A (en)
AT (1) AT270748B (en)
BE (1) BE668878A (en)
CH (1) CH477915A (en)
DE (1) DE1272452B (en)
GB (1) GB1043689A (en)
NL (1) NL6410080A (en)
SE (1) SE321298B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3549401A (en) * 1966-12-20 1970-12-22 Ibm Method of making electroluminescent gallium phosphide diodes
CA920280A (en) * 1970-11-16 1973-01-30 Omron Tateisi Electronics Co. Semiconductive transducer
JP2698891B2 (en) * 1992-11-07 1998-01-19 信越半導体株式会社 GaP light emitting device substrate

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT228858B (en) * 1961-02-07 1963-08-12 Philips Nv Electro-optical semiconductor device
US3293513A (en) * 1962-08-08 1966-12-20 Texas Instruments Inc Semiconductor radiant diode
US3290539A (en) * 1963-09-16 1966-12-06 Rca Corp Planar p-nu junction light source with reflector means to collimate the emitted light

Also Published As

Publication number Publication date
US3394085A (en) 1968-07-23
DE1272452B (en) 1968-07-11
GB1043689A (en) 1966-09-21
BE668878A (en) 1966-02-28
CH477915A (en) 1969-09-15
SE321298B (en) 1970-03-02
NL6410080A (en) 1966-03-01

Similar Documents

Publication Publication Date Title
AT349206B (en) DEVICE FOR PRODUCING PLASTIC TUBES WITH CROSS-PROFILING
AT302311B (en) PROCESS FOR THE PREPARATION OF HOMOPYRIMIDAZOLE DERIVATIVES AND THEIR ACID-ADDITIONAL SALTS AND QUATERNAL AMMONIUM SALTS
AT278641B (en) Containers and processes for their manufacture
CH509241A (en) Process for the preparation of compounds with an alk-3-en-1-ol structure
CH438502A (en) Radioactive radiation source and process for its production
CH517359A (en) Semiconductor element and process for its manufacture
CH464538A (en) Process for the production of heat-resistant, linear, thermoplastic polythioethers
CH478135A (en) Process for the production of cephemonic acids and their salts
AT275157B (en) Process for the production of nitrogen-containing unsaturated polyesters
AT275606B (en) Semiconductor device with a field effect transistor and method for the production thereof
AT284815B (en) PROCESS FOR THE PRODUCTION OF PHENOXYPROPANOLAMINES AND THEIR ACID ADDITION SALTS
AT270748B (en) Injection radiation source with zinc-doped gallium phosphide and process for their production
CH458536A (en) Process for the manufacture of gallium phosphide electroluminescent diodes - US Pat
AT275404B (en) Packing and process for their manufacture
CH542193A (en) Process for the manufacture of secosteroids
CH466779A (en) Process for the production of components
AT260741B (en) Method and device for the production of loop yarn
CH488768A (en) Process for stabilizing synthetic linear polyamides
CH473143A (en) Process for modifying triglycidyl isocyanurate
CH444985A (en) Photocell and process for its manufacture
AT256867B (en) Process for the production of new benzenesulfonylureas and their salts
CH490781A (en) Process for producing semiconductor components which can be used as recombination emitters
CH469346A (en) Indirectly heatable cathode and process for their manufacture
CH446527A (en) Light-emitting diode and process for their manufacture
AT254266B (en) Injection radiation source with semiconductor material and method for producing such a semiconductor material