DE1272452B - Zinc-doped gallium phosphide semiconductor radiation source and process for its manufacture - Google Patents
Zinc-doped gallium phosphide semiconductor radiation source and process for its manufactureInfo
- Publication number
- DE1272452B DE1272452B DEP1272A DE1272452A DE1272452B DE 1272452 B DE1272452 B DE 1272452B DE P1272 A DEP1272 A DE P1272A DE 1272452 A DE1272452 A DE 1272452A DE 1272452 B DE1272452 B DE 1272452B
- Authority
- DE
- Germany
- Prior art keywords
- zinc
- gallium
- melt
- tin
- atomic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910005540 GaP Inorganic materials 0.000 title claims description 23
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 title claims description 23
- 230000005855 radiation Effects 0.000 title claims description 22
- 238000000034 method Methods 0.000 title claims description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000004065 semiconductor Substances 0.000 title claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 24
- 239000011701 zinc Substances 0.000 claims description 24
- 239000000155 melt Substances 0.000 claims description 23
- 229910052725 zinc Inorganic materials 0.000 claims description 23
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 17
- 229910052733 gallium Inorganic materials 0.000 claims description 17
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 11
- 229910052698 phosphorus Inorganic materials 0.000 claims description 11
- 239000011574 phosphorus Substances 0.000 claims description 11
- 238000002347 injection Methods 0.000 claims description 10
- 239000007924 injection Substances 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 10
- 229910052732 germanium Inorganic materials 0.000 claims 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 6
- 239000003708 ampul Substances 0.000 claims 5
- 239000011324 bead Substances 0.000 claims 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims 2
- 239000010453 quartz Substances 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910001020 Au alloy Inorganic materials 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910001297 Zn alloy Inorganic materials 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 claims 1
- 238000001816 cooling Methods 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 229910000154 gallium phosphate Inorganic materials 0.000 claims 1
- LWFNJDOYCSNXDO-UHFFFAOYSA-K gallium;phosphate Chemical compound [Ga+3].[O-]P([O-])([O-])=O LWFNJDOYCSNXDO-UHFFFAOYSA-K 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 230000002452 interceptive effect Effects 0.000 claims 1
- 210000004072 lung Anatomy 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 239000000243 solution Substances 0.000 claims 1
- 239000007921 spray Substances 0.000 claims 1
- 230000008961 swelling Effects 0.000 claims 1
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/4901—Structure
- H01L2224/4903—Connectors having different sizes, e.g. different diameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
- Catalysts (AREA)
Description
BUNDESREPUBLIK DEUTSCHLAND DEUTSCHES WTTWl· PATENTAMT Int. Cl.: FEDERAL REPUBLIC OF GERMANY GERMAN WTTWl · PATENT OFFICE Int. Cl .:
H05bH05b
AUSLEGESCHRIFTEDITORIAL
Deutsche Kl.: 2If-89/03 German class: 2If-89/03
Nummer: 1272452 Number: 1272452
Aktenzeichen: P 12 72 452.6-33 (N 27245) File number: P 12 72 452.6-33 (N 27245)
Anmeldetag: 25. August 1965 Filing date: August 25, 1965
Auslegetag: 11. Juli 1968 Opening day: July 11, 1968
Die Erfindung betrifft eine Halbleiterstrahlungsquelle aus zinkdotiertem Galliumphosphid. Eine solche Strahlungsquelle bekannter Art besteht aus Galliumphosphid, das Zink in fester Lösung enthält, mit einer Elektrode, von der her ein Überschuß an Ladungsträgern in das zinkdotierte Galliumphosphid injiziert werden kann, wodurch bei der Rekombination von Elektronen und Löchern in dem Körper Strahlung entstehen kann. Weiter bezieht sich die Erfindung auf ein Verfahren zur Herstellung zink- ίο dotierten Galliumphosphids durch Abtrennung aus einer im wesentlichen aus Gallium und Phosphor bestehenden Schmelze, der außerdem eine Zinkdotierung zugesetzt ist. Die Rekombination braucht dabei nicht eine direkte Kombination eines Elektrons aus dem Leitungsband mit einem Loch aus dem Valenzband zu sein, sondern kann auch stufenweise erfolgen, z. B., wenn ein Elektron aus dem Leitungsband oder ein Loch aus dem Valenzband in ein Zwischenniveau eingefangen wird und sich darauf mit einem Loch ao bzw. einem Elektron kombiniert, wobei in mindestens einer der Stufen Strahlung entsteht. Statt in zwei Stufen kann die Rekombination auch in drei oder mehr Stufen erfolgen.The invention relates to a semiconductor radiation source made from zinc-doped gallium phosphide. One such a radiation source of a known type consists of gallium phosphide, which contains zinc in solid solution, with an electrode from which an excess of charge carriers in the zinc-doped gallium phosphide can be injected, thereby causing the recombination of electrons and holes in the body Radiation can arise. The invention also relates to a method for producing zinc ίο doped gallium phosphide by separation from one consisting essentially of gallium and phosphorus Melt to which zinc doping has also been added. The recombination needs it not a direct combination of an electron from the conduction band with a hole from the valence band to be, but can also be done in stages, e.g. B. when an electron is out of the conduction band or a hole from the valence band is captured in an intermediate level and then with a hole ao or an electron combined, with radiation being produced in at least one of the stages. Instead of two Stages, the recombination can also take place in three or more stages.
Eine solche Strahlungsquelle läßt sich für viele as Zwecke verwenden, z. B. als Lampe, in elektrischen, optischen oder elektrooptischen Vorrichtungen mit mindestens einem elektrolumineszierenden Teil, z. B. bei Signalübertragungsvorrichtungen mit elektrolumineszierenden Zellen und Photozellen, in Bildverstärkern mit photoelektrischen und elektrolumineszierenden Schichten, optoelektronischen Transistoren und in optischen Sendern (Lasern) mit einer Injektionsstrahlungsquelle, in der stimulierte, kohärente Strahlung erzeugt wird.Such a radiation source can be used for many as Use purposes, e.g. B. as a lamp, in electrical, optical or electro-optical devices with at least one electroluminescent part, e.g. B. in signal transmission devices with electroluminescent Cells and photocells, in image intensifiers with photoelectric and electroluminescent Layers, optoelectronic transistors and in optical transmitters (lasers) with an injection radiation source, in which stimulated, coherent radiation is generated.
Die Strahlung kann z. B. in dem Halbleitermaterial durch Stromdurchgang durch einen p-n-, p-i-n-, oder Metall-Halbleiter-Übergang erzeugt werden.The radiation can e.g. B. in the semiconductor material by current passage through a p-n, p-i-n, or Metal-semiconductor transition are generated.
Es ist bekannt, daß zinkdotiertes Galliumphosphid ein besonders gut geeignetes Material zur Anwendung in einer Injektionsstrahlungsquelle ist, wobei Strahlung in dem sichtbaren Bereich des Spektrums mit einem Maximum bei etwa 7000 und 5750 A erzeugt wird. Die Ausbeute kann dabei sehr hoch sein.It is known that zinc-doped gallium phosphide is a particularly well-suited material for use in an injection radiation source, radiation being generated in the visible region of the spectrum with a maximum at about 7000 and 5750 Å . The yield can be very high.
Es hat sich jedoch ergeben, daß, in Körpern hergestellt, aus einer Schmelze von Gallium, Phosphor
und Zink wenigstens bei Zimmertemperatur häufig keine Injektionslumineszenz erzeugt werden konnte,
auch wenn die Kristalle durchsichtig waren. Es wurde weiter gefunden, daß die lumineszierenden Eigenschäften
wohl erzielt wurden, wenn die Schmelze mit etwas Sauerstoff verunreinigt war. Die Schlußfolge-Halbleiterstrahlungsquelle
aus zinkdotiertem
Galliumphosphid und Verfahren zu ihrer
HerstellungHowever, it has been found that, produced in bodies, often no injection luminescence could be generated from a melt of gallium, phosphorus and zinc, at least at room temperature, even if the crystals were transparent. It was further found that the luminescent properties were achieved when the melt was contaminated with some oxygen. The final sequence semiconductor radiation source made of zinc-doped
Gallium phosphide and method for its
Manufacturing
Anmelder:Applicant:
N. V. Philips' Gloeilampenfabrieken,
Eindhoven (Niederlande)NV Philips' Gloeilampenfabrieken,
Eindhoven (Netherlands)
Vertreter:Representative:
Dipl.-Ing. E. E. Walther, Patentanwalt,Dipl.-Ing. E. E. Walther, patent attorney,
2000 Hamburg 1, Mönckebergstr. 72000 Hamburg 1, Mönckebergstr. 7th
Als Erfinder benannt:Named as inventor:
Willem Westerveid,Willem Westerveid,
Wilhelmus Polycarpus de Graaf, EindhovenWilhelmus Polycarpus de Graaf, Eindhoven
(Niederlande)(Netherlands)
Beanspruchte Priorität:Claimed priority:
Niederlande vom 29. August 1964 (6410 080) - -Netherlands of August 29, 1964 (6410 080) - -
rung wurde daher gezogen, daß zum Erzielen einer guten Injektionslumineszenz die Anwesenheit von Zink und Sauerstoff in dem Galliumphosphid erforderlich war.It was therefore drawn that, in order to achieve good injection luminescence, the presence of Zinc and oxygen in the gallium phosphide was required.
Es ist jedoch schwierig, Sauerstoff in reproduzierbarer Weise in der Schmelze zu dosieren. Die Schmelze enthält weiter Bestandteile, die leicht mit Sauerstoff reagieren. Es kann z. B. festes Galliumoxyd in der Schmelze gebildet werden. Die Teilchen dieses Stoffes können als Kristallisationskeime wirksam werden, was der Bildung der im allgemeinen verlangten Einkristalle geeigneter Größe entgegenwirkt. Weiter können solche Teilchen Einschlüsse in den erhaltenen Galliumphosphidkörpern bilden, die bei Verwendung eines solchen Körpers in einer Strahlungsquelle einen Teil der erzeugten Strahlung absorbieren könnten.However, it is difficult to meter oxygen into the melt in a reproducible manner. The melt also contains components that easily react with oxygen. It can e.g. B. solid gallium oxide in the Melt are formed. The particles of this substance can act as crystal nuclei, what counteracts the formation of the generally required single crystals of suitable size. Such can continue Particles form inclusions in the resulting gallium phosphide bodies, which when using such Body in a radiation source could absorb some of the radiation generated.
Die Erfindung bezweckt unter anderem, zinkdotiertes Galliumphosphid zur Anwendung in einer Injektionsstrahlungsquelle zu schaffen, das diese Nachteile nicht aufweist. Es wurde nunmehr gefunden, daß Galliumphosphid, hergestellt aus einer sauerstofffreien Schmelze von Gallium, Phosphor und Zink, keine nachweisbaren Mengen Zink enthält, während aus einer solchen Schmelze, die weiter eine kleine Menge Sauerstoff enthält, Galliumphosphid gebildet werden kann, das Zink in Mengen enthält, die spek-The invention aims, inter alia, with zinc-doped gallium phosphide for use in an injection radiation source to create that does not have these disadvantages. It has now been found that gallium phosphide prepared from an oxygen-free Melt of gallium, phosphorus and zinc, while containing no detectable amounts of zinc gallium phosphide is formed from such a melt, which also contains a small amount of oxygen that contains zinc in amounts that are spec-
809 569/236809 569/236
Claims (1)
dieser beiden Elemente fehlt, ist vorzugsweise geringer 25 Es folgt ein Beispiel der Herstellung einer Lichtais der atomare Zinkgehalt. quelle aus einem auf die vorstehend beschriebeneThe atomic content of germanium and tin is sorted according to size and it can possibly be combined, whereby the content of only one of these larger crystals in smaller single crystal bodies with the elements has to be taken into account when the other desired dimensions are divided,
absent of these two elements, it is preferably less than 25. The following is an example of the preparation of a light as the atomic zinc content. source from one on the one described above
anderen Elemente in der Schmelze gewählt wird, 50 Patentansprüche:
brauchen die Bildung der Schmelze und die Abtrennung von Galliumphosphid aus der Schmelze nicht * 1. Halbleiterstrahlungsquelle aus zinkdotiertem bei besonders hohen Temperaturen durchgeführt zu _ Galliumphosphid, dadurch gekennzeichwerden. Außerdem können Galliumphosphidkristalle" net, daß das zinkdotierte Galliumphosphid minmit einer praktisch konstanten Zinkkonzentration 55 destens in dem der Elektrode benachbarten Teil ohne nennenswerte Konzentrationsgradienten erhalten zusätzlich Zinn und/oder Germanium enthält,
werden. Die atomare Menge Galliumum der Schmelze 2. Strahlungsquelle nach Ansprach 1, dadurch ist vorzugsweise mindestens das Zweifache der atoma- gekennzeichnet, daß der Zinkgehalt mindestens ren Phosphormenge in der Schmelze. In der Praxis 5 · 10~6 und höchstens 1 · 10~4 Gewichtsteile bewird vorzugsweise eine Schmelze mit einer atomaren 60 trägt.Due to the fact that the atomic amount of gallium in the radiation with a maximum at around 7000 and melt is greater than the total atomic amount of 5750 A,
other elements in the melt is selected, 50 claims:
do not need the formation of the melt and the separation of gallium phosphide from the melt. In addition, gallium phosphide crystals can be obtained so that the zinc-doped gallium phosphide with a practically constant zinc concentration at least in the part adjacent to the electrode without significant concentration gradients additionally contains tin and / or germanium,
will. The atomic amount of gallium in the melt 2. Radiation source according to spoke 1, characterized is preferably at least twice the atomic amount, characterized in that the zinc content is at least ren amount of phosphorus in the melt. In practice, 5 · 10 -6 and at most 1 x 10 ~ 4 parts by weight bewird preferably carries a melt having an atomic 60th
österreichische Patentschrift Nr. 228 858.Considered publications:
Austrian patent specification No. 228 858.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6410080A NL6410080A (en) | 1964-08-29 | 1964-08-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1272452B true DE1272452B (en) | 1968-07-11 |
Family
ID=19790909
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DEP1272A Pending DE1272452B (en) | 1964-08-29 | 1965-08-25 | Zinc-doped gallium phosphide semiconductor radiation source and process for its manufacture |
Country Status (8)
Country | Link |
---|---|
US (1) | US3394085A (en) |
AT (1) | AT270748B (en) |
BE (1) | BE668878A (en) |
CH (1) | CH477915A (en) |
DE (1) | DE1272452B (en) |
GB (1) | GB1043689A (en) |
NL (1) | NL6410080A (en) |
SE (1) | SE321298B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3549401A (en) * | 1966-12-20 | 1970-12-22 | Ibm | Method of making electroluminescent gallium phosphide diodes |
CA920280A (en) * | 1970-11-16 | 1973-01-30 | Omron Tateisi Electronics Co. | Semiconductive transducer |
JP2698891B2 (en) * | 1992-11-07 | 1998-01-19 | 信越半導体株式会社 | GaP light emitting device substrate |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT228858B (en) * | 1961-02-07 | 1963-08-12 | Philips Nv | Electro-optical semiconductor device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3293513A (en) * | 1962-08-08 | 1966-12-20 | Texas Instruments Inc | Semiconductor radiant diode |
US3290539A (en) * | 1963-09-16 | 1966-12-06 | Rca Corp | Planar p-nu junction light source with reflector means to collimate the emitted light |
-
1964
- 1964-08-29 NL NL6410080A patent/NL6410080A/xx unknown
-
1965
- 1965-08-13 US US479556A patent/US3394085A/en not_active Expired - Lifetime
- 1965-08-25 DE DEP1272A patent/DE1272452B/en active Pending
- 1965-08-26 GB GB36653/65A patent/GB1043689A/en not_active Expired
- 1965-08-26 SE SE11160/65A patent/SE321298B/xx unknown
- 1965-08-26 AT AT785265A patent/AT270748B/en active
- 1965-08-26 CH CH1199365A patent/CH477915A/en not_active IP Right Cessation
- 1965-08-27 BE BE668878A patent/BE668878A/xx unknown
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT228858B (en) * | 1961-02-07 | 1963-08-12 | Philips Nv | Electro-optical semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
CH477915A (en) | 1969-09-15 |
SE321298B (en) | 1970-03-02 |
GB1043689A (en) | 1966-09-21 |
US3394085A (en) | 1968-07-23 |
BE668878A (en) | 1966-02-28 |
AT270748B (en) | 1969-05-12 |
NL6410080A (en) | 1966-03-01 |
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