BE668878A - - Google Patents
Info
- Publication number
- BE668878A BE668878A BE668878A BE668878A BE668878A BE 668878 A BE668878 A BE 668878A BE 668878 A BE668878 A BE 668878A BE 668878 A BE668878 A BE 668878A BE 668878 A BE668878 A BE 668878A
- Authority
- BE
- Belgium
Links
Classifications
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- H10P95/00—
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
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- H10W72/07552—
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- H10W72/522—
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- H10W72/527—
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- H10W72/536—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Catalysts (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6410080A NL6410080A (enExample) | 1964-08-29 | 1964-08-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE668878A true BE668878A (enExample) | 1966-02-28 |
Family
ID=19790909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE668878A BE668878A (enExample) | 1964-08-29 | 1965-08-27 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3394085A (enExample) |
| AT (1) | AT270748B (enExample) |
| BE (1) | BE668878A (enExample) |
| CH (1) | CH477915A (enExample) |
| DE (1) | DE1272452B (enExample) |
| GB (1) | GB1043689A (enExample) |
| NL (1) | NL6410080A (enExample) |
| SE (1) | SE321298B (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3549401A (en) * | 1966-12-20 | 1970-12-22 | Ibm | Method of making electroluminescent gallium phosphide diodes |
| CA920280A (en) * | 1970-11-16 | 1973-01-30 | Omron Tateisi Electronics Co. | Semiconductive transducer |
| JP2698891B2 (ja) * | 1992-11-07 | 1998-01-19 | 信越半導体株式会社 | ＧａＰ系発光素子基板 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT228858B (de) * | 1961-02-07 | 1963-08-12 | Philips Nv | Elektro-optische Halbleitervorrichtung |
| US3293513A (en) * | 1962-08-08 | 1966-12-20 | Texas Instruments Inc | Semiconductor radiant diode |
| US3290539A (en) * | 1963-09-16 | 1966-12-06 | Rca Corp | Planar p-nu junction light source with reflector means to collimate the emitted light |
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1964
- 1964-08-29 NL NL6410080A patent/NL6410080A/xx unknown
-
1965
- 1965-08-13 US US479556A patent/US3394085A/en not_active Expired - Lifetime
- 1965-08-25 DE DEP1272A patent/DE1272452B/de active Pending
- 1965-08-26 SE SE11160/65A patent/SE321298B/xx unknown
- 1965-08-26 CH CH1199365A patent/CH477915A/de not_active IP Right Cessation
- 1965-08-26 GB GB36653/65A patent/GB1043689A/en not_active Expired
- 1965-08-26 AT AT785265A patent/AT270748B/de active
- 1965-08-27 BE BE668878A patent/BE668878A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB1043689A (en) | 1966-09-21 |
| AT270748B (de) | 1969-05-12 |
| SE321298B (enExample) | 1970-03-02 |
| US3394085A (en) | 1968-07-23 |
| CH477915A (de) | 1969-09-15 |
| DE1272452B (de) | 1968-07-11 |
| NL6410080A (enExample) | 1966-03-01 |