CH477915A - Verfahren zur Herstellung zinkdotierten Galliumphosphids und Verwendung von nach dem Verfahren hergestelltem Galliumphosphid zur Herstellung einer Injektionsstrahlungsquelle - Google Patents

Verfahren zur Herstellung zinkdotierten Galliumphosphids und Verwendung von nach dem Verfahren hergestelltem Galliumphosphid zur Herstellung einer Injektionsstrahlungsquelle

Info

Publication number
CH477915A
CH477915A CH1199365A CH1199365A CH477915A CH 477915 A CH477915 A CH 477915A CH 1199365 A CH1199365 A CH 1199365A CH 1199365 A CH1199365 A CH 1199365A CH 477915 A CH477915 A CH 477915A
Authority
CH
Switzerland
Prior art keywords
gallium phosphide
producing
radiation source
produced
zinc
Prior art date
Application number
CH1199365A
Other languages
German (de)
English (en)
Inventor
Westerveld Willem
Polycarpus De Graaf Wilhelmus
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH477915A publication Critical patent/CH477915A/de

Links

Classifications

    • H10P95/00—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10W72/07552—
    • H10W72/522—
    • H10W72/527—
    • H10W72/536—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Catalysts (AREA)
  • Led Devices (AREA)
CH1199365A 1964-08-29 1965-08-26 Verfahren zur Herstellung zinkdotierten Galliumphosphids und Verwendung von nach dem Verfahren hergestelltem Galliumphosphid zur Herstellung einer Injektionsstrahlungsquelle CH477915A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6410080A NL6410080A (enExample) 1964-08-29 1964-08-29

Publications (1)

Publication Number Publication Date
CH477915A true CH477915A (de) 1969-09-15

Family

ID=19790909

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1199365A CH477915A (de) 1964-08-29 1965-08-26 Verfahren zur Herstellung zinkdotierten Galliumphosphids und Verwendung von nach dem Verfahren hergestelltem Galliumphosphid zur Herstellung einer Injektionsstrahlungsquelle

Country Status (8)

Country Link
US (1) US3394085A (enExample)
AT (1) AT270748B (enExample)
BE (1) BE668878A (enExample)
CH (1) CH477915A (enExample)
DE (1) DE1272452B (enExample)
GB (1) GB1043689A (enExample)
NL (1) NL6410080A (enExample)
SE (1) SE321298B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3549401A (en) * 1966-12-20 1970-12-22 Ibm Method of making electroluminescent gallium phosphide diodes
CA920280A (en) * 1970-11-16 1973-01-30 Omron Tateisi Electronics Co. Semiconductive transducer
JP2698891B2 (ja) * 1992-11-07 1998-01-19 信越半導体株式会社 ＧａＰ系発光素子基板

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT228858B (de) * 1961-02-07 1963-08-12 Philips Nv Elektro-optische Halbleitervorrichtung
US3293513A (en) * 1962-08-08 1966-12-20 Texas Instruments Inc Semiconductor radiant diode
US3290539A (en) * 1963-09-16 1966-12-06 Rca Corp Planar p-nu junction light source with reflector means to collimate the emitted light

Also Published As

Publication number Publication date
GB1043689A (en) 1966-09-21
AT270748B (de) 1969-05-12
SE321298B (enExample) 1970-03-02
US3394085A (en) 1968-07-23
BE668878A (enExample) 1966-02-28
DE1272452B (de) 1968-07-11
NL6410080A (enExample) 1966-03-01

Similar Documents

Publication Publication Date Title
CH485671A (de) Verfahren zur Herstellung von Aminonitrilen
AT273041B (de) Verfahren zur Herstellung von festen Lösungen
CH479589A (de) Verfahren zur Herstellung von Imidazolen
CH474540A (de) Verfahren zur Herstellung von Phosphonamiden
CH441305A (de) Verfahren zur Herstellung von Phosphinen
CH405615A (de) Verfahren zur Herstellung einer Injektionsnadel und nach diesem Verfahren hergestellte Injektionsnadel
CH443322A (de) Verfahren zur Herstellung von s-Triazinen
CH449268A (de) Verfahren zur Herstellung von Mischpolyacetalen
CH456580A (de) Verfahren zur Herstellung von Nitroalkyladamantanen und deren Verwendung
CH517709A (de) Verfahren zur Herstellung von 4-Acetoxybenzylidenmalonitrilen und Verwendung derselben
CH477915A (de) Verfahren zur Herstellung zinkdotierten Galliumphosphids und Verwendung von nach dem Verfahren hergestelltem Galliumphosphid zur Herstellung einer Injektionsstrahlungsquelle
AT273915B (de) Verfahren zur Herstellung von Cycloalkylhydroperoxyden
CH466779A (de) Verfahren zur Herstellung von Bauelementen
CH542193A (de) Verfahren zur Herstellung von Secosteroiden
AT264841B (de) Verfahren zur Herstellung von Polyarylsulfonen
AT260741B (de) Verfahren und Vorrichtung zur Herstellung von Schlingengarn
CH445440A (de) Verfahren zur Herstellung von Kunstleder
CH424765A (de) Verfahren zur Herstellung von ungesättigten Ketonen
CH447187A (de) Verfahren zur Herstellung von substituierten Imidazolidinen
CH489485A (de) Verfahren zur Herstellung von Polyenverbindungen
CH460001A (de) Verfahren zur Herstellung von Sulfoxid-Zinnkomplexverbindungen und deren Verwendung
CH491131A (de) Verfahren zur Herstellung von biologisch aktiven substituierten s-Triazinen
CH468365A (de) Verfahren zur Herstellung von Testosteron-Derivaten
CH443278A (de) Verfahren zur Herstellung von Cycloalkyl-Arylketonen
AT255022B (de) Verfahren zur Herstellung von Zahnprothesen

Legal Events

Date Code Title Description
PL Patent ceased