WO2008117693A1 - ポジ型感放射線性組成物およびそれを用いたレジストパターン形成方法 - Google Patents

ポジ型感放射線性組成物およびそれを用いたレジストパターン形成方法 Download PDF

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Publication number
WO2008117693A1
WO2008117693A1 PCT/JP2008/054881 JP2008054881W WO2008117693A1 WO 2008117693 A1 WO2008117693 A1 WO 2008117693A1 JP 2008054881 W JP2008054881 W JP 2008054881W WO 2008117693 A1 WO2008117693 A1 WO 2008117693A1
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WO
WIPO (PCT)
Prior art keywords
pattern
composition
formation
layer
exposure
Prior art date
Application number
PCT/JP2008/054881
Other languages
English (en)
French (fr)
Inventor
Yukio Nishimura
Kaori Sakai
Nobuji Matsumura
Makoto Sugiura
Atsushi Nakamura
Gouji Wakamatsu
Yuusuke Anno
Original Assignee
Jsr Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corporation filed Critical Jsr Corporation
Priority to EP08722276A priority Critical patent/EP2131240A4/en
Priority to US12/529,341 priority patent/US20100068650A1/en
Priority to JP2009506291A priority patent/JP4877388B2/ja
Priority to KR1020147010400A priority patent/KR20140069190A/ko
Priority to KR1020097019404A priority patent/KR101431297B1/ko
Publication of WO2008117693A1 publication Critical patent/WO2008117693A1/ja
Priority to US13/769,907 priority patent/US8808974B2/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
    • G03F7/202—Masking pattern being obtained by thermal means, e.g. laser ablation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2024—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure of the already developed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

　液浸露光プロセスを用いた二重露光によるパターンニングにおいて、第一層目に形成されるパターンを不活性化させ、第二層目のパターン形成時における露光の際に、第一層目のパターンが感光してアルカリ可溶性とならず、第一層目のパターンを保持したまま第二層目のパターンを形成可能なパターン形成方法等を提供する。 　本パターン形成方法は、第一レジスト層形成用組成物を用い、基板上に第一パターンを形成する工程と、第一パターンを不活性化させる工程と、第二レジスト層形成用組成物を用い、パターンが形成された基板上に第二レジスト層を形成し、露光する工程と、現像し、第一パターンのスペース部分に第二パターンを形成する工程とを含み、第一レジスト層形成用組成物はネガ化を促進する架橋剤を含有することを特徴とする。
PCT/JP2008/054881 2007-03-28 2008-03-17 ポジ型感放射線性組成物およびそれを用いたレジストパターン形成方法 WO2008117693A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
EP08722276A EP2131240A4 (en) 2007-03-28 2008-03-17 POSITIVE ACTIVE RADIATION-SENSITIVE COMPOSITION AND METHOD OF CREATING A RESIST PATTERN USING THE COMPOSITION
US12/529,341 US20100068650A1 (en) 2007-03-28 2008-03-17 Positive-working radiation-sensitive composition and method for resist pattern formation using the composition
JP2009506291A JP4877388B2 (ja) 2007-03-28 2008-03-17 ポジ型感放射線性組成物およびそれを用いたレジストパターン形成方法
KR1020147010400A KR20140069190A (ko) 2007-03-28 2008-03-17 포지티브형 감방사선성 조성물 및 그것을 이용한 레지스트 패턴 형성 방법
KR1020097019404A KR101431297B1 (ko) 2007-03-28 2008-03-17 포지티브형 감방사선성 조성물 및 그것을 이용한 레지스트 패턴 형성 방법
US13/769,907 US8808974B2 (en) 2007-03-28 2013-02-19 Method for forming pattern

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-084586 2007-03-28
JP2007084586 2007-03-28
JP2008-030850 2008-02-12
JP2008030850 2008-02-12

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/529,341 A-371-Of-International US20100068650A1 (en) 2007-03-28 2008-03-17 Positive-working radiation-sensitive composition and method for resist pattern formation using the composition
US13/769,907 Division US8808974B2 (en) 2007-03-28 2013-02-19 Method for forming pattern

Publications (1)

Publication Number Publication Date
WO2008117693A1 true WO2008117693A1 (ja) 2008-10-02

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PCT/JP2008/054881 WO2008117693A1 (ja) 2007-03-28 2008-03-17 ポジ型感放射線性組成物およびそれを用いたレジストパターン形成方法

Country Status (6)

Country Link
US (2) US20100068650A1 (ja)
EP (1) EP2131240A4 (ja)
JP (1) JP4877388B2 (ja)
KR (2) KR20140069190A (ja)
TW (1) TWI442183B (ja)
WO (1) WO2008117693A1 (ja)

Cited By (33)

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JP2009063989A (ja) * 2007-02-16 2009-03-26 Shin Etsu Chem Co Ltd パターン形成方法並びにこれに用いるレジスト材料
WO2010007976A1 (ja) * 2008-07-14 2010-01-21 Jsr株式会社 レジストパターン不溶化樹脂組成物及びそれを用いるレジストパターン形成方法
WO2010007993A1 (ja) * 2008-07-15 2010-01-21 Jsr株式会社 ポジ型感放射線性組成物及びレジストパターン形成方法
WO2010029965A1 (ja) * 2008-09-10 2010-03-18 Jsr株式会社 感放射線性樹脂組成物
JP2010145641A (ja) * 2008-12-17 2010-07-01 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物およびレジストパターン形成方法
JP2010160348A (ja) * 2009-01-08 2010-07-22 Jsr Corp 感放射線性樹脂組成物及び重合体
JP2010160346A (ja) * 2009-01-08 2010-07-22 Jsr Corp 感放射線性樹脂組成物
JP2010171039A (ja) * 2009-01-20 2010-08-05 Toshiba Corp 半導体装置の製造方法
JP2010197689A (ja) * 2009-02-25 2010-09-09 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
US20100279226A1 (en) * 2007-12-28 2010-11-04 Mitsuhiro Hata Resist processing method
JP2010254960A (ja) * 2009-03-23 2010-11-11 Jsr Corp 重合体及びポジ型感放射線性樹脂組成物
JP2010276624A (ja) * 2009-04-28 2010-12-09 Jsr Corp 感放射線性樹脂組成物
JP2011008237A (ja) * 2009-05-26 2011-01-13 Shin-Etsu Chemical Co Ltd レジスト材料及びパターン形成方法
JP2011014835A (ja) * 2009-07-06 2011-01-20 Sony Corp 半導体デバイスの製造方法，パターン形成方法
JP2011508246A (ja) * 2007-12-13 2011-03-10 インターナショナル・ビジネス・マシーンズ・コーポレーション フォトレジスト組成物及び多層レジスト系を用いた多重露光方法
JP2011053666A (ja) * 2009-08-04 2011-03-17 Shin-Etsu Chemical Co Ltd パターン形成方法及びレジスト材料
US20110091820A1 (en) * 2008-06-16 2011-04-21 Mitsuhiro Hata Resist processing method
JP2011102974A (ja) * 2009-10-16 2011-05-26 Shin-Etsu Chemical Co Ltd パターン形成方法及びレジスト材料
WO2011065207A1 (ja) * 2009-11-30 2011-06-03 Jsr株式会社 感放射線性組成物及びレジストパターン形成方法
US20110165521A1 (en) * 2010-01-07 2011-07-07 Sumitomo Chemical Company, Limited Process for producing photoresist pattern
US20110183264A1 (en) * 2008-09-12 2011-07-28 Sumitomo Chemical Company, Limited Resist processing method and use of positive type resist composition
US20110189618A1 (en) * 2008-09-05 2011-08-04 Sumitomo Chemical Company, Limited Resist processing method
JP2011170284A (ja) * 2010-02-22 2011-09-01 Jsr Corp 感放射線性樹脂組成物及びレジストパターン形成方法
JP2011187928A (ja) * 2010-02-12 2011-09-22 Tokyo Electron Ltd 基板処理方法
JP2011197150A (ja) * 2010-03-17 2011-10-06 Jsr Corp 感放射線性組成物及びそれを用いたレジストパターン形成方法
JP2012088449A (ja) * 2010-10-18 2012-05-10 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物、レジストパターン形成方法
JP2012173418A (ja) * 2011-02-18 2012-09-10 Tokyo Ohka Kogyo Co Ltd レジスト組成物、レジストパターン形成方法、高分子化合物
JP2013011866A (ja) * 2011-05-30 2013-01-17 Shin Etsu Chem Co Ltd パターン形成方法及びレジスト組成物
JP2013080192A (ja) * 2011-04-27 2013-05-02 Fujifilm Corp 樹脂組成物、硬化物の製造方法、樹脂パターン製造方法、硬化物及び光学部材
JP2013092590A (ja) * 2011-10-25 2013-05-16 Shin Etsu Chem Co Ltd ポジ型レジスト組成物及びパターン形成方法
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KR101738480B1 (ko) * 2009-07-30 2017-05-23 주식회사 동진쎄미켐 자가정렬 이중 패턴 형성용 포토레지스트 조성물
JP2021073505A (ja) * 2010-06-01 2021-05-13 インプリア・コーポレイションＩｎｐｒｉａ Ｃｏｒｐｏｒａｔｉｏｎ パターン形成された無機層、放射線によるパターン形成組成物、およびそれに対応する方法

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US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
JP6140487B2 (ja) * 2013-03-14 2017-05-31 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
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KR102214895B1 (ko) * 2017-12-26 2021-02-09 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴 형성 방법

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5993448A (ja) 1982-09-30 1984-05-29 ブリューワー・サイエンス・インコーポレイテッド 反射防止コ−テイング
JPH05136033A (ja) * 1991-11-13 1993-06-01 Hitachi Ltd パターン形成方法及びその装置
JPH05188598A (ja) 1991-06-28 1993-07-30 Internatl Business Mach Corp <Ibm> 表面反射防止コーティングフィルム
JP2001027806A (ja) * 1999-07-13 2001-01-30 Mitsubishi Rayon Co Ltd 化学増幅型レジスト組成物およびレジストパターン形成方法
JP2005352384A (ja) 2004-06-14 2005-12-22 Fuji Photo Film Co Ltd 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
JP2006003846A (ja) * 2004-06-21 2006-01-05 Daito Chemix Corp 化学増幅型フォトレジスト用重合体
JP2007065503A (ja) * 2005-09-01 2007-03-15 Osaka Prefecture Univ レジスト組成物

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4026857A (en) * 1975-05-23 1977-05-31 Mobil Oil Corporation Epoxy emulsion water-based coating
JPS58190946A (ja) * 1982-04-30 1983-11-08 Sharp Corp ホトレジスト
US5214106A (en) * 1991-05-22 1993-05-25 E. I. Du Pont De Nemours And Company Cured fluoroelastomer compositions
JPH08194308A (ja) * 1995-01-13 1996-07-30 Nippon Zeon Co Ltd レジスト組成物
EP0786701A4 (en) * 1994-10-13 1998-08-12 Nippon Zeon Co PHOTO PAINT COMPOSITION
NL1006369C2 (nl) * 1997-06-20 1998-12-22 Tno Toepassing van met oxime beschermde isocyanaatgroepen bij de UV-uitharding van harsen bij lage temperatuur, alsmede UV-uithardbare harsen die dergelijke oxime-beschermde isocyanaatgroepen bevatten en de toepassing hiervan in UV-uithardbare bekledingssamenstellingen.
JP3996322B2 (ja) * 2000-04-27 2007-10-24 松下電器産業株式会社 パターン形成材料及びパターン形成方法
KR100557615B1 (ko) * 2000-10-23 2006-03-10 주식회사 하이닉스반도체 레지스트 플로우 공정용 포토레지스트 조성물
JP3827556B2 (ja) * 2001-10-31 2006-09-27 松下電器産業株式会社 パターン形成方法
US6723488B2 (en) * 2001-11-07 2004-04-20 Clariant Finance (Bvi) Ltd Photoresist composition for deep UV radiation containing an additive
JP3928433B2 (ja) * 2002-01-31 2007-06-13 住友化学株式会社 レジスト組成物
JP4269740B2 (ja) * 2002-03-28 2009-05-27 住友化学株式会社 ポジ型化学増幅型レジスト組成物
JP2004161838A (ja) * 2002-11-12 2004-06-10 Asahi Glass Co Ltd 撥水撥油剤組成物および共重合体の製造方法
JP4207604B2 (ja) * 2003-03-03 2009-01-14 Ｊｓｒ株式会社 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの形成方法
JP4083053B2 (ja) * 2003-03-31 2008-04-30 富士フイルム株式会社 ポジ型レジスト組成物
JP3884412B2 (ja) * 2003-06-18 2007-02-21 株式会社東芝 記録媒体
KR100575001B1 (ko) * 2004-12-10 2006-04-28 삼성전자주식회사 상호 결합 없는 이중 포토 리소그라피 방법
JP5047502B2 (ja) * 2005-01-19 2012-10-10 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 樹脂混合物を含むフォトレジスト組成物
JP4396849B2 (ja) * 2005-01-21 2010-01-13 信越化学工業株式会社 ネガ型レジスト材料及びパターン形成方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5993448A (ja) 1982-09-30 1984-05-29 ブリューワー・サイエンス・インコーポレイテッド 反射防止コ−テイング
JPH0612452B2 (ja) 1982-09-30 1994-02-16 ブリュ−ワ−・サイエンス・インコ−ポレイテッド 集積回路素子の製造方法
JPH05188598A (ja) 1991-06-28 1993-07-30 Internatl Business Mach Corp <Ibm> 表面反射防止コーティングフィルム
JPH05136033A (ja) * 1991-11-13 1993-06-01 Hitachi Ltd パターン形成方法及びその装置
JP2001027806A (ja) * 1999-07-13 2001-01-30 Mitsubishi Rayon Co Ltd 化学増幅型レジスト組成物およびレジストパターン形成方法
JP2005352384A (ja) 2004-06-14 2005-12-22 Fuji Photo Film Co Ltd 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
JP2006003846A (ja) * 2004-06-21 2006-01-05 Daito Chemix Corp 化学増幅型フォトレジスト用重合体
JP2007065503A (ja) * 2005-09-01 2007-03-15 Osaka Prefecture Univ レジスト組成物

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2131240A4 *

Cited By (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009063989A (ja) * 2007-02-16 2009-03-26 Shin Etsu Chem Co Ltd パターン形成方法並びにこれに用いるレジスト材料
JP2011508246A (ja) * 2007-12-13 2011-03-10 インターナショナル・ビジネス・マシーンズ・コーポレーション フォトレジスト組成物及び多層レジスト系を用いた多重露光方法
US20100279226A1 (en) * 2007-12-28 2010-11-04 Mitsuhiro Hata Resist processing method
US20110091820A1 (en) * 2008-06-16 2011-04-21 Mitsuhiro Hata Resist processing method
US8877429B2 (en) 2008-07-14 2014-11-04 Jsr Corporation Resin composition for making resist pattern insoluble, and method for formation of resist pattern by using the same
WO2010007976A1 (ja) * 2008-07-14 2010-01-21 Jsr株式会社 レジストパターン不溶化樹脂組成物及びそれを用いるレジストパターン形成方法
JP5182372B2 (ja) * 2008-07-14 2013-04-17 Ｊｓｒ株式会社 レジストパターン不溶化樹脂組成物及びそれを用いるレジストパターン形成方法
US9029067B2 (en) 2008-07-14 2015-05-12 Jsr Corporation Resin composition for making resist pattern insoluble, and method for formation of resist pattern by using the same
WO2010007993A1 (ja) * 2008-07-15 2010-01-21 Jsr株式会社 ポジ型感放射線性組成物及びレジストパターン形成方法
US8501385B2 (en) 2008-07-15 2013-08-06 Jsr Corporation Positive-type radiation-sensitive composition, and resist pattern formation method
JP5445454B2 (ja) * 2008-07-15 2014-03-19 Ｊｓｒ株式会社 ポジ型感放射線性組成物及びレジストパターン形成方法
US20110189618A1 (en) * 2008-09-05 2011-08-04 Sumitomo Chemical Company, Limited Resist processing method
CN102150082B (zh) * 2008-09-10 2013-08-07 Jsr株式会社 放射线敏感性树脂组合物
WO2010029965A1 (ja) * 2008-09-10 2010-03-18 Jsr株式会社 感放射線性樹脂組成物
US20110183264A1 (en) * 2008-09-12 2011-07-28 Sumitomo Chemical Company, Limited Resist processing method and use of positive type resist composition
JP2010145641A (ja) * 2008-12-17 2010-07-01 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物およびレジストパターン形成方法
JP2010160346A (ja) * 2009-01-08 2010-07-22 Jsr Corp 感放射線性樹脂組成物
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JP2010171039A (ja) * 2009-01-20 2010-08-05 Toshiba Corp 半導体装置の製造方法
JP2010197689A (ja) * 2009-02-25 2010-09-09 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
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JP2010276624A (ja) * 2009-04-28 2010-12-09 Jsr Corp 感放射線性樹脂組成物
JP2011008237A (ja) * 2009-05-26 2011-01-13 Shin-Etsu Chemical Co Ltd レジスト材料及びパターン形成方法
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US8741546B2 (en) 2009-08-04 2014-06-03 Shin-Etsu Chemical Co., Ltd. Patterning process and resist composition
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KR20100014445A (ko) 2010-02-10
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US20130164695A1 (en) 2013-06-27
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