WO2010007993A1 - ポジ型感放射線性組成物及びレジストパターン形成方法 - Google Patents
ポジ型感放射線性組成物及びレジストパターン形成方法 Download PDFInfo
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- WO2010007993A1 WO2010007993A1 PCT/JP2009/062750 JP2009062750W WO2010007993A1 WO 2010007993 A1 WO2010007993 A1 WO 2010007993A1 JP 2009062750 W JP2009062750 W JP 2009062750W WO 2010007993 A1 WO2010007993 A1 WO 2010007993A1
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- YGSDEFSMJLZEOE-UHFFFAOYSA-M [O-]C(c1ccccc1O)=O Chemical compound [O-]C(c1ccccc1O)=O YGSDEFSMJLZEOE-UHFFFAOYSA-M 0.000 description 1
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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Definitions
- the present invention relates to a positive-type radiation-sensitive composition and a resist pattern forming method, and more particularly, to a positive-type radiation-sensitive composition that is used for patterning by double exposure and is preferably used for an immersion exposure process such as water. And a resist pattern forming method using the same.
- finer pattern formation for example, a fine resist pattern with a line width of about 45 nm
- the wavelength of the light source of the exposure apparatus ArF excimer laser (wavelength: 193 nm)
- NA numerical aperture
- the increase in the numerical aperture (NA) of the lens has a problem that the depth of focus decreases even if the resolution is increased because the resolution and the depth of focus are in a trade-off relationship.
- liquid immersion lithography liquid immersion lithography
- a 32 nm line with a 1: 3 pitch is formed, a hard mask such as SiO 2 (hereinafter also referred to as “HM”) is processed by etching, and then a resist pattern of the first layer is formed.
- HM hard mask
- a 32 nm line with a pitch of 1: 3 is formed at a position shifted by a half cycle, and a HM is processed again by etching to finally form a 32 nm line with a pitch of 1: 1. ing.
- An object of the present invention is to provide a positive-type radiation-sensitive composition that can be suitably used for forming a first resist layer.
- the following positive radiation sensitive composition and resist pattern forming method are provided.
- the first resist pattern was formed using the step (2) for insolubilizing the second positive-type radiation-sensitive composition by using the second positive-type radiation-sensitive composition.
- a positive radiation sensitive composition comprising a radiation sensitive acid generator and (D) a solvent.
- the polymer (A) and the polymer (B) each have a repeating unit having an acid labile group represented by the following general formula (1), and the following general formulas (2-1) to (2- 5) and a repeating unit having at least one lactone structure selected from the group consisting of the following formula (2-6) or a repeating unit represented by the following general formula (2-7)
- the positive radiation sensitive composition as described in 1. above.
- R 1 represents a hydrogen atom, a methyl group or a trifluoromethyl group
- R 2 independently of each other is a linear or branched alkyl group having 1 to 4 carbon atoms, Or a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms, or any two R 2 's bonded to each other and formed together with the carbon atoms to which they are bonded.
- a cyclic hydrocarbon group or a derivative thereof is shown.
- R 3 represents a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 4 carbon atoms, and p represents an integer of 1 to 3.
- R 4 represents a hydrogen atom or a methoxy group.
- A represents a single bond or a methylene group, and m represents 0 or 1.
- B represents an oxygen atom or a methylene group.
- R 10 represents a hydrogen atom, a methyl group or a trifluoromethyl group
- R 11 independently of each other, represents a hydrogen atom or a chain hydrocarbon having 1 to 5 carbon atoms.
- D represents a single bond, a divalent or trivalent chain hydrocarbon group having 1 to 30 carbon atoms, a divalent or trivalent alicyclic hydrocarbon group having 3 to 30 carbon atoms, or a carbon number 6 to 30 divalent or trivalent aromatic hydrocarbon groups.
- D is trivalent, the carbon atom contained in D and the carbon atom which comprises cyclic carbonate are couple
- n represents an integer of 2 to 4.
- polymer (B) according to any one of the above [1] to [3], wherein the polymer (B) includes a repeating unit represented by at least one of the following general formulas (3-1) and (3-2): A positive-type radiation-sensitive composition.
- R 1 represents a hydrogen atom, a methyl group or a trifluoromethyl group.
- R 5 represents a methylene group, an ethylene group or a propylene group
- R 6 is a group represented by the following general formula (4) or the following general formula (5). Represents a group.
- R 7 represents a methylene group or an alkylene group having 2 to 6 carbon atoms
- R 8 represents a hydrogen atom, a methyl group or an ethyl group.
- n represents 0 or 1.
- R 9 independently represents a hydrogen atom or 1 to 10 linear or branched alkyl groups.
- the proportion of the repeating units represented by the general formula (3-1) or (3-2) contained in the polymer (B) is the sum of the repeating units contained in the polymer (B).
- R 27 represents a hydrogen atom, a methyl group, or a trifluoromethyl group
- R 28 is a single bond or a linear, branched or cyclic group having 1 to 20 carbon atoms
- X represents a methylene group substituted with a fluorine atom, or a linear or branched fluoroalkylene group having 2 to 20 carbon atoms
- R 29 is: A hydrogen atom or a monovalent organic group is shown.
- R 30 represents a hydrogen atom, a methyl group, or a trifluoromethyl group
- Y represents a linking group
- R 31 has at least one fluorine atom. 1 to 6 linear or branched alkyl groups, monovalent alicyclic hydrocarbon groups having 4 to 20 carbon atoms, or derivatives thereof.
- a step (1) of forming a first resist pattern on a substrate using the positive radiation-sensitive composition according to any one of [1] to [7], and the first resist A step (2) of inactivating the pattern with light or heat to insolubilize the second positive radiation sensitive composition, and using the second positive radiation sensitive composition. And (3) forming a second resist pattern on the substrate on which the first resist pattern is formed.
- the first resist pattern has a line portion and a space portion
- the second resist pattern has a line portion and a space portion
- the positive-type radiation-sensitive composition of the present invention can be suitably used for an immersion exposure process, and has an effect that it is suitably used for forming a first resist layer in patterning by double exposure. It is what you play.
- the first resist pattern is exposed to alkali and becomes soluble during exposure for forming the second resist pattern.
- the second resist pattern can be formed while holding the first resist pattern, and further, the line width variation of the first resist pattern can be suppressed, which is suitable for the immersion exposure process. There is an effect that it can be adopted.
- the resist pattern forming method of the present invention is a method including steps (1) to (3).
- An embodiment of a resist pattern forming method of the present invention including steps (1) to (3) will be described with reference to the drawings.
- “line pattern” refers to a line-and-space pattern in which the resist pattern has a line portion and a space portion (hereinafter also referred to as “LS”).
- Step (1) 1A to 1C are schematic views showing an example of the step (1) in the resist pattern forming method according to the present invention.
- step (1) first, as shown in FIG. 1A, a first resist layer 2 is formed on a substrate 1 using a first positive radiation-sensitive composition.
- FIG. 1B exposure is performed by irradiation of radiation (arrow in the figure) through a mask 4 having a predetermined pattern in a desired area and optionally through an immersion exposure liquid 3 such as water.
- the alkali developing part 5 is formed on the first resist layer 2.
- a first resist pattern 12 having a line portion 14 and a space portion 13 space for three lines with respect to 1L3S: one line
- the first resist layer 2 can be formed by applying a first positive radiation-sensitive composition on the substrate 1.
- the coating method is not particularly limited, and can be performed by an appropriate coating means such as spin coating, cast coating, roll coating or the like.
- the thickness of the first resist layer 2 to be formed is not particularly limited, but is usually 10 to 1000 nm, and preferably 10 to 500 nm.
- the solvent in the coating film may be volatilized by pre-baking (hereinafter referred to as “PB”) as necessary.
- PB pre-baking
- the heating conditions for PB are appropriately selected depending on the composition of the first positive radiation-sensitive composition, but are usually about 30 to 200 ° C., preferably 50 to 150 ° C.
- a protective film is provided on the first resist layer as disclosed in, for example, Japanese Patent Laid-Open No. 5-188598. You can also.
- the immersion protection is provided on the first resist layer.
- a film can also be provided.
- the first positive radiation sensitive composition is the positive radiation sensitive composition of the present invention described later.
- the substrate is not particularly limited, and for example, a conventionally known substrate such as a silicon wafer or a wafer coated with aluminum can be used.
- a conventionally known substrate such as a silicon wafer or a wafer coated with aluminum can be used.
- An organic or inorganic antireflection film may be formed on the substrate to be used.
- the required area of the first resist layer 2 is exposed by radiation irradiation through a mask 4 having a predetermined pattern, and the alkali developing portion 5 is exposed to the first resist layer 2.
- an immersion exposure liquid 3 such as water or a fluorine-based inert liquid may be optionally passed.
- the radiation used for the exposure is visible light, ultraviolet light, far ultraviolet light, X-ray, charged depending on the type of the radiation sensitive acid generator (C) contained in the first positive radiation sensitive composition.
- far ultraviolet rays represented by ArF excimer laser (wavelength 193 nm) and KrF excimer laser (wavelength 248 nm) are preferable, and far ultraviolet rays by ArF excimer laser (wavelength 193 nm) are particularly preferable.
- the exposure conditions such as the exposure amount are appropriately selected according to the composition of the first positive radiation-sensitive composition, the type of additive, and the like.
- PEB heat treatment
- the heating conditions for PEB are appropriately selected depending on the composition of the first positive radiation-sensitive composition, but are usually 30 to 200 ° C., preferably 50 to 170 ° C.
- the positive resist type having a line portion 14 and a space portion 13 as shown in FIG.
- the first resist pattern 12 can be formed.
- it is generally washed with water and dried.
- Preferred examples of the developer include sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, ammonia, ethylamine, n-propylamine, diethylamine, di-n-propylamine, triethylamine, methyldiethylamine , Ethyldimethylamine, triethanolamine, tetramethylammonium hydroxide, pyrrole, piperidine, choline, 1,8-diazabicyclo- [5.4.0] -7-undecene, 1,5-diazabicyclo- [4.3. 0] -5-nonene and an alkaline aqueous solution in which at least one alkaline compound is dissolved.
- the concentration of the alkaline aqueous solution is usually 10% by mass or less. If the concentration of the alkaline aqueous solution is more than 10% by mass, the unexposed area may be dissolved in the developer.
- alkali-insoluble or hardly soluble in alkali means that 50% or more of the initial film thickness of a film formed only from a polymer remains after development under alkaline development conditions performed when a resist pattern is formed. Refers to nature.
- An organic solvent can also be added to the alkaline aqueous solution.
- the use ratio of the organic solvent is preferably 100% by volume or less with respect to the alkaline aqueous solution. If the usage ratio is more than 100% by volume, the developability may be reduced, and the remaining development in the exposed area may increase. Further, an appropriate amount of a surfactant or the like may be added to the alkaline aqueous solution.
- FIG. 2 is a schematic diagram showing an example of the step (2) in the resist pattern forming method according to the present invention.
- the first resist pattern formed in the step (1) is baked at a temperature of 120 ° C. or higher, preferably 140 ° C. or higher, and / or radiation irradiation, preferably 300 nm or less.
- the first resist pattern is insolubilized with respect to the second positive-type radiation-sensitive composition by exposing the first resist pattern to light or heat by exposure to light having a wavelength of One resist pattern 22 is assumed.
- More specific exposure conditions include a method of irradiating radiation with an exposure dose 2 to 20 times the optimum exposure dose for forming the first resist pattern.
- a heating condition the method of heating on temperature conditions higher than PEB temperature at the time of forming a 1st resist pattern can be mentioned.
- examples of the UV cure include a method using a lamp such as an Ar 2 lamp, a KrCl lamp, a Kr 2 lamp, a XeCl lamp, and an Xe 2 lamp (USHIO INC.). These inactivation methods may be performed alone or in combination of two or more.
- the insolubilized resin composition may be coated.
- an insolubilized resin composition for example, there is one containing a hydroxyl group-containing resin and an alcohol solvent and having a property of being insolubilized by baking. More specifically, a resin composed of a monomer having an amide bond in the molecule (having an amide group) and a monomer having a hydroxyl group, a monovalent alcohol having 1 to 8 carbon atoms, and if necessary And those containing a crosslinking component.
- the insolubilized resin composition is applied, baked, and then developed to form a pattern insolubilized with respect to the second positive radiation sensitive composition.
- inactive to light means that the radiation-sensitive resin composition is not exposed to light by exposure to radiation or the like. That is, the first resist pattern 22 does not become alkali-soluble even when exposed. Further, “inactive to heat” means that the pattern does not disappear by heating during the formation of the second resist pattern using the second positive radiation-sensitive composition.
- Step (3) 3A to 3C are schematic views showing an example of the step (3) in the resist pattern forming method according to the present invention.
- step (3) first, as shown in FIG. 3A, a second resist layer 32 is formed on the substrate 1 on which the first resist pattern 22 is formed using the second positive radiation-sensitive composition. Form.
- radiation irradiation (in the drawing) is performed through a mask 34 having a predetermined pattern in a space portion of the first resist pattern 22 and, optionally, through an immersion exposure liquid 33 such as water. Exposure by the arrow) is performed to form an alkali developing portion 35 in the second resist layer 32.
- FIG. 3A first, as shown in FIG. 3A, a second resist layer 32 is formed on the substrate 1 on which the first resist pattern 22 is formed using the second positive radiation-sensitive composition. Form.
- FIG. 3B radiation irradiation (in the drawing) is performed through a mask 34 having a predetermined pattern in a space portion of the first resist pattern 22 and, optionally, through an immersion exposure liquid 33 such
- a second resist pattern 42 can be formed in the space portion of the substrate 1 on which the first resist pattern 22 is formed.
- the “space portion of the first resist pattern 22” refers to a portion where the first resist layer 2 has been peeled off due to dissolution of the alkali developing portion 5 during development in the step (1).
- the second resist layer can be formed by applying the second positive radiation-sensitive composition onto the substrate on which the first resist pattern is formed.
- the coating method is not particularly limited, and can be performed by an appropriate coating means such as spin coating, cast coating, roll coating or the like.
- the thickness of the second resist layer is not particularly limited, but is usually 10 to 1000 nm, and preferably 10 to 500 nm.
- the solvent in the coating film may be volatilized by PB if necessary.
- the heating conditions for this PB are appropriately selected depending on the blending composition of the second positive radiation sensitive composition, but are usually about 30 to 200 ° C., preferably 50 to 150 ° C.
- the second positive radiation sensitive composition is a second positive radiation sensitive composition described later.
- the same solvent may be sufficient as the solvent contained in a 1st positive radiation sensitive composition and a 2nd positive radiation sensitive composition, and a different solvent may be sufficient as it. This is because the first resist pattern is inactivated with respect to heat or light by performing the step (2), so that it is insolubilized with respect to the second positive radiation sensitive composition. Therefore, the second resist layer can be formed without mixing with the first resist pattern.
- a mask 34 having a predetermined pattern is formed in the space portion of the first resist pattern 22 on the substrate 1 on which the second resist layer 32 is formed. Then, exposure by radiation irradiation is performed to form the alkali developing portion 35 in the second resist layer 32.
- an immersion exposure liquid 33 such as water or a fluorine-based inert liquid may be optionally passed. Further, the exposure conditions and the like can be said to be the same as the exposure conditions and the like described in the step (1).
- the second line portion 42 a of the second resist pattern 42 formed in the step (3) is formed in a grid pattern in the first space portion 22 b of the first resist pattern 22.
- a resist pattern (contact hole pattern 15) having a pattern defined by the first line portion 22a of the insolubilized first resist pattern 22 and the second line portion 42a of the second resist pattern 42 is formed.
- the second line portion 42 a of the second resist pattern 42 formed in the step (3) is replaced with the first line of the insolubilized first resist pattern 22. It can also be formed on the first line portion 22a so as to intersect the line portion 22a.
- the resist pattern forming method of the present invention is configured so that the line portion of the first resist pattern and the line portion of the second resist pattern intersect each other. It is preferable to form a pattern.
- a positive radiation-sensitive composition is produced by the action of an acid generated from an acid generator by exposure to dissociate an acid-dissociable group present in the composition to form a carboxyl group.
- the exposed portion becomes highly soluble in an alkali developer, and is dissolved and removed by the alkali developer, so that a positive resist pattern can be formed.
- it is used when forming the first resist layer, and is used when forming the first positive radiation-sensitive composition that is the positive radiation-sensitive composition of the present invention and the second resist layer.
- the second positive-type radiation-sensitive composition will be described separately.
- the first positive radiation sensitive composition is a polymer (B) having an acid labile group and a crosslinking group (hereinafter referred to as “polymer (B)”). ), A radiation sensitive acid generator (C) (hereinafter referred to as “acid generator (C)”), and a solvent (D), having an acid labile group,
- the polymer preferably contains a polymer (A) having no crosslinking group (hereinafter referred to as “polymer (A)”).
- the first resist pattern is inactive to light or heat by exposure to light having a wavelength of 300 nm or less and / or by heating at a temperature of 140 ° C. or higher. By improving the resistance, the resistance of the first resist pattern to the second resist layer is improved, and it is preferable that the resist pattern remains without being damaged when the second resist pattern is formed.
- the “acid labile group” referred to in this specification is sometimes called an “acid-dissociable group” and refers to a group that is dissociated by an acid.
- a polymer insoluble or hardly soluble in an alkali having an acid labile group is dissociated into a carboxyl group by the action of an acid, and becomes a polymer soluble in an alkali.
- the first positive radiation sensitive composition preferably contains the polymer (A).
- the 1st resist layer which melt
- the polymer (A) includes a repeating unit having an acid labile group represented by the general formula (1) (hereinafter referred to as “repeating unit (1)”), and the general formulas (2-1) to (2). -5) and a repeating unit having at least one lactone structure selected from the group consisting of formula (2-6) or a repeating unit represented by formula (2-7) (hereinafter referred to as “repeating unit (2)”) It is preferable to include.
- R 1 represents a hydrogen atom, a methyl group or a trifluoromethyl group
- R 2 s independently of each other, a linear or branched alkyl group having 1 to 4 carbon atoms, or A monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms, or any two R 2 's bonded to each other and formed together with the carbon atoms to which they are bonded
- 20 represents a divalent alicyclic hydrocarbon group of 20 or a derivative thereof
- the remaining R 2 is a linear or branched alkyl group having 1 to 4 carbon atoms, or a monovalent alicyclic ring having 4 to 20 carbon atoms.
- the formula hydrocarbon group or its derivative is shown.
- R 3 represents a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 4 carbon atoms, and p represents an integer of 1 to 3.
- R 4 represents a hydrogen atom or a methoxy group.
- A represents a single bond or a methylene group, and m represents 0 or 1.
- B represents an oxygen atom or a methylene group.
- R 10 represents a hydrogen atom, a methyl group or a trifluoromethyl group
- R 11 independently of each other, represents a hydrogen atom or a chain hydrocarbon group having 1 to 5 carbon atoms.
- D represents a single bond, a divalent or trivalent chain hydrocarbon group having 1 to 30 carbon atoms, a divalent or trivalent alicyclic hydrocarbon group having 3 to 30 carbon atoms, or a carbon number of 6 Represents a divalent or trivalent aromatic hydrocarbon group of ⁇ 30.
- D is trivalent, the carbon atom contained in D and the carbon atom which comprises cyclic carbonate are couple
- n represents an integer of 2 to 4.
- examples of the linear or branched alkyl group having 1 to 4 carbon atoms include a methyl group, an ethyl group, an n-propyl group, i- Examples include propyl group, n-butyl group, 2-methylpropyl group, 1-methylpropyl group, t-butyl group and the like.
- Examples of the monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms include norbornane, tricyclodecane, tetracyclododecane, adamantane, and cyclobutane, cyclopentane, cyclohexane, cycloheptane, cyclooctane and the like.
- examples of the divalent alicyclic hydrocarbon group having 4 to 20 carbon atoms formed by bonding any two R 2 to each other or derivatives thereof include, for example, norbornane, tricyclodecane, tetracyclododecane, A group consisting of an alicyclic ring derived from adamantane, cyclopentane, cyclohexane or the like; a group consisting of these alicyclic rings is, for example, a methyl group, an ethyl group, an n-propyl group, an i-propyl group as described above , A group substituted with a linear, branched or cyclic alkyl group having 1 to 4 carbon atoms such as an n-butyl group, a 2-methylpropyl group, a 1-methylpropyl group and a t-butyl group.
- preferable examples of the group represented by —C (R 2 ) 3 include t-butyl group, 1-n- (1-ethyl-1-methyl) propyl group, 1-n- (1,1-dimethyl) propyl group, 1-n- (1,1-dimethyl) butyl group, 1-n- (1,1-dimethyl) pentyl group, 1- (1,1-diethyl) propyl group, Groups having no alicyclic ring such as 1-n- (1,1-diethyl) butyl group and 1-n- (1,1-diethyl) pentyl group; 1- (1-methyl) cyclopentyl group, 1 -(1-ethyl) cyclopentyl group, 1- (1-n-propyl) cyclopentyl group, 1- (1-i-propyl) cyclopentyl group, 1- (1-methyl) cyclohexyl group, 1- (1-ethyl) Cyclohexyl
- examples of the substituted or unsubstituted alkyl group having 1 to 4 carbon atoms include a methyl group, an ethyl group, an n-propyl group, i- Examples include propyl group, n-butyl group, 2-methylpropyl group, 1-methylpropyl group, t-butyl group and the like.
- the chain hydrocarbon group refers to a hydrocarbon group composed of only a chain structure without a cyclic structure in the main chain.
- an alicyclic hydrocarbon group means the hydrocarbon group which contains only the structure of an alicyclic hydrocarbon in a ring structure, and does not contain an aromatic ring structure.
- the alicyclic hydrocarbon group does not need to be composed only of the structure of the alicyclic hydrocarbon, and a part thereof may include a chain structure.
- the aromatic hydrocarbon group means a hydrocarbon group containing an aromatic ring structure in the ring structure.
- this aromatic hydrocarbon group does not need to be composed only of an aromatic ring structure, and a part thereof may include a chain structure or an alicyclic hydrocarbon structure.
- specific examples of the structure when the group represented by D is a chain hydrocarbon group include an oxygen atom of (meth) acrylic acid constituting the polymer and a cyclic carbonate structure. Are bonded to each other via a linear alkyl group having 1 to 5 carbon atoms (specifically, general formulas (2-7-1) to (2-7-) to be described later) 6)). These chain hydrocarbon groups may have a substituent (specifically, a repeating unit represented by the general formula (2-7-16) described later).
- the carbon atom contained in D and the carbon atom forming the cyclic carbonate structure may be bonded to form a ring structure.
- the cyclic carbonate structure may constitute a part of a bridged ring, a condensed ring, or a spiro ring.
- a bridged ring or a condensed ring is formed, and when only one carbon atom in the cyclic carbonate is included, a spiro ring Is formed.
- the repeating unit represented by 17) to (2-7-22) has a condensed ring (5- to 6-membered ring) containing a carbon atom contained in D and two carbon atoms forming a cyclic carbonate structure. It is an example of being formed.
- the repeating units represented by the general formulas (2-7-10) and (2-7-14) described later are composed of carbon atoms contained in D and one carbon atom forming a cyclic carbonate structure. This is an example in which a spiro ring is formed.
- the ring structure is, for example, a heterocycle containing a heteroatom such as an oxygen atom (O) or a nitrogen atom (N) (specifically, general formulas (2-7-17) to (2-7-) described later) 22)).
- the repeating units represented by the general formulas (2-7-8) and (2-7-13) described later include two carbon atoms contained in D and two carbon atoms forming a cyclic carbonate structure. This is an example in which a bridged ring including is formed.
- Examples of the divalent alicyclic hydrocarbon group include carbon such as 1,3-cyclobutylene group, 1,3-cyclopentylene group, 1,4-cyclohexylene group, 1,5-cyclooctylene group, and the like.
- Examples of the trivalent alicyclic hydrocarbon group include a group in which one hydrogen atom is eliminated from a monocyclic cycloalkylene group or a polycyclic cycloalkylene group.
- the structure when the group represented by D is an alicyclic hydrocarbon group, the structure includes an oxygen atom of (meth) acrylic acid constituting the polymer and a cyclic carbonate.
- a cyclopentylene group specifically, a repeating unit represented by the general formula (2-7-10) described later
- a norbornylene group specifically, repeating units represented by the following general formulas (2-7-11) and (2-7-12)
- a substituted tetradecahydrophenanthryl group Specifically, repeating units represented by the general formula (2-7-14) described later
- the repeating units represented by the general formulas (2-7-11) and (2-7-12) described later include carbon atoms contained in D and two carbon atoms constituting the cyclic carbonate. This is an example in which a condensed ring (4- to 5-membered ring) is formed.
- the repeating units represented by the general formulas (2-7-10) and (2-7-14) described later are composed of carbon atoms contained in D and one carbon atom constituting the cyclic carbonate. This is an example in which a spiro ring is formed.
- Examples of the divalent aromatic hydrocarbon group include arylene groups such as a phenylene group, a tolylene group, a naphthylene group, a phenanthrylene group, and an anthrylene group.
- Examples of the trivalent aromatic hydrocarbon group include a group in which one hydrogen atom is eliminated from an arylene group.
- Examples of the group represented by D in the general formula (2-7) being an aromatic hydrocarbon group include an oxygen atom of (meth) acrylic acid constituting the polymer and a carbon atom constituting the cyclic carbonate. Are bonded via a benzylene group (specifically, a repeating unit represented by the general formula (2-7-15) described later).
- the repeating unit represented by the general formula (2-7-15) has a condensed ring (6-membered ring) including a carbon atom contained in D and two carbon atoms forming a cyclic carbonate structure. This is an example.
- the monomer giving the repeating unit (1) include (meth) acrylic acid 2-methyladamantyl-2-yl ester, (meth) acrylic acid 2-methyl-3-hydroxyadamantyl-2-yl ester, (Meth) acrylic acid 2-ethyladamantyl-2-yl ester, (meth) acrylic acid 2-ethyl-3-hydroxyadamantyl-2-yl ester, (meth) acrylic acid 2-n-propyladamantyl-2-yl ester (Meth) acrylic acid 2-isopropyladamantyl-2-yl ester, (meth) acrylic acid-2-methylbicyclo [2.2.1] hept-2-yl ester, (meth) acrylic acid-2-ethylbicyclo ester [2.2.1] Hept-2-yl ester, (meth) acrylic acid-8-methyltricyclo [5.2.1.0] 2,6 ] decan-8-yl ester, (meth) acrylic acid-8-ethy
- (meth) acrylic acid refers to both acrylic acid and methacrylic acid.
- the polymer (A) may contain only one type of repeating unit (1), or may contain two or more types.
- repeating unit (2) Preferable examples of the monomer that gives the repeating unit (2) include (meth) acrylic acid-5-oxo-4-oxa-tricyclo [4.2.1.0 3,7 ] non-2-yl ester, (Meth) acrylic acid-9-methoxycarbonyl-5-oxo-4-oxa-tricyclo [4.2.1.0 3,7 ] non-2-yl ester, (meth) acrylic acid-5-oxo-4 -Oxa-tricyclo [5.2.1.0 3,8 ] dec-2-yl ester, (meth) acrylic acid-10-methoxycarbonyl-5-oxo-4-oxa-tricyclo [5.2.1.
- Monomers that give a repeating unit represented by the general formula (2-7) include, for example, Tetrahedron Letters, Vol. 27, no. 32 p. 3741 (1986), Organic Letters, Vol. 4, no. 15 p. 2561 (2002), etc., and can be synthesized by a conventionally known method.
- repeating unit represented by the general formula (2-7) include repeating units represented by the general formulas (2-7-1) to (2-7-22).
- R 10 represents a hydrogen atom, a methyl group or a trifluoromethyl group.
- the polymer (A) is at least one selected from the group consisting of repeating units represented by the general formulas (2-7-1) to (2-7-6) as the repeating unit (2-7). It is preferable from the viewpoint of improving the solubility in a developer.
- the polymer (A) may contain only one type of repeating unit (2) or may contain two or more types.
- the preferable content ratio of each of the above-mentioned repeating units when the total of all the repeating units contained in the polymer (A) is 100 mol% is shown below.
- the content of the repeating unit (1) is preferably 20 to 90 mol%, more preferably 20 to 80 mol%, still more preferably 20 to 70 mol%.
- the content ratio of the repeating unit (1) is within this range, it is particularly effective from the viewpoint of both ensuring water repellency after coating and increasing the contact angle with respect to the developer after PEB.
- the content ratio of the repeating unit (2) is usually 80 mol% or less, preferably 20 to 80 mol%, more preferably 30 to 70 mol%. When the content ratio of the repeating unit (2) is within this range, it is particularly effective from the viewpoint of reducing the difference between the advancing contact angle and the receding contact angle.
- the polymer (A) may contain one or more repeating units other than the repeating unit (1) and the repeating unit (2) (hereinafter referred to as “other repeating units”).
- repeating unit (6) examples include a repeating unit represented by the general formula (6) (hereinafter referred to as “repeating unit (6)”) and a repeating unit represented by the general formula (7) (hereinafter referred to as “repeating unit (6)”).
- Repeat unit (7) examples include a repeating unit represented by the general formula (6) (hereinafter referred to as “repeating unit (6)”) and a repeating unit represented by the general formula (7) (hereinafter referred to as “repeating unit (6)”).
- Repeat unit (7) examples include a repeating unit represented by the general formula (6) (hereinafter referred to as “repeating unit (6)”) and a repeating unit represented by the general formula (7) (hereinafter referred to as “repeating unit (6)”).
- Repeat unit (7) examples include a repeating unit represented by the general formula (6) (hereinafter referred to as “repeating unit (6)”) and a repeating unit represented by the general formula (7) (hereinafter referred to as “repe
- R 1 represents a hydrogen atom, a methyl group or a trifluoromethyl group
- Z represents a single bond or a divalent organic group having 1 to 3 carbon atoms
- W represents a carbon number of 7 -20 substituted or unsubstituted polycyclic alicyclic hydrocarbon groups.
- the substituent may be a linear or branched alkyl group having 1 to 10 carbon atoms, a cyclic alkyl group having 4 to 20 carbon atoms, hydroxyl group, A cyano group, a hydroxyalkyl group having 1 to 10 carbon atoms, a carboxyl group, or an oxo group.
- R 12 represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a trifluoromethyl group or a hydroxymethyl group
- R 13 represents a divalent organic group.
- Examples of the substituted or unsubstituted polycyclic alicyclic hydrocarbon group having 7 to 20 carbon atoms represented as W in the repeating unit (6) include, for example, bicyclo [2.2.1] represented by the following formula: Heptane (6a), bicyclo [2.2.2] octane (6b), tricyclo [5.2.1.0 2,6 ] decane (6c), tetracyclo [6.2.1.1 3,6 . Hydrocarbon groups derived from cycloalkanes such as 0 2,7 ] dodecane (6d) and tricyclo [3.3.1.1 3,7 ] decane (6e).
- examples of the substituent include a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, and 2-methyl.
- a linear or branched alkyl group having 1 to 10 carbon atoms such as a propyl group, 1-methylpropyl group, t-butyl group, etc., a cyclic group having 4 to 20 carbon atoms such as a cyclopentyl group, a cyclohexyl group or a cyclooctyl group.
- the substituent is not limited to these alkyl groups, and may be a hydroxyl group, a cyano group, a hydroxyalkyl group having 1 to 10 carbon atoms, a carboxyl group, or an oxo group.
- examples of the alkyl group having 1 to 4 carbon atoms include a methyl group, an ethyl group, an n-propyl group, an i-propyl group, and an n-butyl group. , 2-methylpropyl group, 1-methylpropyl group, t-butyl group and the like.
- the divalent organic group represented by R 13 preferably is a divalent hydrocarbon radical, a divalent hydrocarbon group having a chain or cyclic are more preferred. It may be an alkylene glycol group, an alkylene ester group, or the like.
- divalent organic group examples include propylene groups such as methylene group, ethylene group, 1,3-propylene group, and 1,2-propylene group, tetramethylene group, pentamethylene group, hexamethylene group, and heptamethylene.
- octamethylene group nonamethylene group, decamethylene group, undecamethylene group, dodecamethylene group, tridecamethylene group, tetradecamethylene group, pentadecamethylene group, hexadecamethylene group, heptadecamethylene group, octadecamethylene group ,
- Nonadecamethylene group icosalen group, 1-methyl-1,3-propylene group, 2-methyl-1,3-propylene group, 2-methyl-1,2-propylene group, 1-methyl-1,4- Saturation of butylene, 2-methyl-1,4-butylene, ethylidene, propylidene, 2-propylidene, etc. Jo hydrocarbon group;
- Cyclobutylene groups such as 1,3-cyclobutylene groups, cyclopentylene groups such as 1,3-cyclopentylene groups, cyclohexylene groups such as 1,4-cyclohexylene groups, 1,5-cyclooctylene groups, etc.
- a monocyclic hydrocarbon ring group such as a cycloalkylene group having 3 to 10 carbon atoms such as a cyclooctylene group, a norbornylene group such as a 1,4-norbornylene group and a 2,5-norbornylene group, and 1,5-adamantylene
- a crosslinked cyclic hydrocarbon ring group such as a bicyclic to tetracyclic hydrocarbon ring group having 4 to 30 carbon atoms such as an adamantylene group such as a 2,6-adamantylene group.
- a hydrocarbon group containing 2,5-norbornylene group, ethylene group, and propylene group are preferable.
- R 13 contains a divalent aliphatic cyclic hydrocarbon group, a bistrifluoromethyl-hydroxy-methyl group (—C (CF 3 ) 2 OH) and a divalent aliphatic cyclic hydrocarbon group It is preferable to arrange an alkylene group having 1 to 4 carbon atoms as a spacer between these groups.
- repeating units include, for example, carboxyl group-containing esters having a bridged hydrocarbon skeleton of unsaturated carboxylic acid; (meth) acrylic acid esters having no bridged hydrocarbon skeleton; unsaturated Carboxyl group-containing esters having no bridged hydrocarbon skeleton of carboxylic acid; polyfunctional monomer having a bridged hydrocarbon skeleton; polyfunctional monomer having no bridged hydrocarbon skeleton
- a repeating unit in which a polymerizable unsaturated bond of (meth) acrylic acid ester having a bridged hydrocarbon skeleton is cleaved is preferable.
- the polymer (A) may contain only one type of other repeating unit, or may contain two or more types.
- the polymer (B) is a polymer having an acid labile group and a crosslinking group, and preferably contains a repeating unit described in the polymer (A), and is represented by the general formulas (3-1) and (3-2). It is more preferable that the resin further contains at least one repeating unit represented by (hereinafter referred to as “repeating unit (3)”).
- the first positive radiation-sensitive composition contains the polymer (B), and in addition to being dissolved in an alkaline developer by the action of an acid, the first resist pattern is heated or exposed. By doing so, it can be insolubilized with respect to the second positive radiation sensitive composition.
- R 1 represents a hydrogen atom, a methyl group or a trifluoromethyl group.
- R 5 represents a methylene group, an ethylene group or a propylene group
- R 6 represents a group represented by general formula (4) or a group represented by general formula (5).
- R 7 represents a methylene group or an alkylene group having 2 to 6 carbon atoms
- R 8 represents a hydrogen atom, a methyl group or an ethyl group.
- n represents 0 or 1.
- R 9 independently of one another represents a hydrogen atom or 1 to 10 linear or branched alkyl groups.
- the content of the polymer (B) is usually 1 to 80 parts by mass, preferably 2 to 50 parts by mass with respect to 100 parts by mass of the polymer (A). If the content is less than 1 part by mass, the second resist layer may not have sufficient performance resistance. On the other hand, if it exceeds 80 parts by mass, resolution failure may occur when the first resist pattern is formed.
- the positive radiation-sensitive composition of the present invention preferably further contains a polymer (F) containing at least one repeating unit represented by the general formula (10) and the general formula (11). . Since the polymer (F) has a fluorine site in its structure, when it is added as a component constituting the positive radiation sensitive composition, when the resist film is formed with the positive radiation sensitive composition, Due to the oil-repellent characteristics of the polymer (F) in the coating, the distribution tends to be higher on the resist coating surface. Therefore, at the time of immersion exposure, it is possible to suppress the acid generator, the acid diffusion control agent, and the like in the resist film from eluting into the immersion exposure liquid such as water.
- the receding contact angle between the resist film and the immersion exposure liquid is increased due to the water-repellent characteristics of the polymer (F). Therefore, water droplets derived from the immersion exposure liquid are unlikely to remain on the resist film, and even when scanning exposure is performed at a high speed, the occurrence of defects such as watermarks due to the immersion exposure liquid can be suppressed.
- R 27 represents a hydrogen atom, a methyl group, or a trifluoromethyl group
- R 28 is a single bond or a linear, branched or cyclic saturated group having 1 to 20 carbon atoms.
- X represents a methylene group substituted with a fluorine atom, or a linear or branched fluoroalkylene group having 2 to 20 carbon atoms
- R 29 represents hydrogen An atom or a monovalent organic group is shown.
- R 30 represents a hydrogen atom, a methyl group, or a trifluoromethyl group
- Y represents a linking group
- R 31 has at least one fluorine atom, and has 1 carbon atom.
- examples of the linear or branched saturated or unsaturated divalent hydrocarbon group having 1 to 20 carbon atoms include, for example, methyl group, ethyl Group, n-propyl group, i-propyl group, n-butyl group, 2-methylpropyl group, 1-methylpropyl group, t-butyl group, pentyl group, isopentyl group, neopentyl group, hexyl group, heptyl group, octyl group And a divalent hydrocarbon group derived from a linear or branched alkyl group having 1 to 20 carbon atoms such as a group, nonyl group, and decyl group.
- examples of the cyclic saturated or unsaturated divalent hydrocarbon group include groups derived from alicyclic hydrocarbons and aromatic hydrocarbons having 3 to 20 carbon atoms.
- Specific examples of the alicyclic hydrocarbon include cyclobutane, cyclopentane, cyclohexane, bicyclo [2.2.1] heptane, bicyclo [2.2.2] octane, and tricyclo [5.2.1.02,6. ] Decane, tricyclo [3.3.1.1 3,7 ] decane, tetracyclo [6.2.1.1 3,6 .
- cycloalkanes such as 0 2,7 ] dodecane.
- Specific examples of aromatic hydrocarbons include benzene and naphthalene.
- the hydrocarbon group includes at least one hydrogen atom in the above-described unsubstituted hydrocarbon group, methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, 2-methylpropyl group.
- Straight chain, branched or cyclic alkyl group having 1 to 12 carbon atoms such as 1-methylpropyl group and t-butyl group, hydroxyl group, cyano group, hydroxyalkyl group having 1 to 10 carbon atoms, carboxyl group Or a group substituted by one or more of oxygen atoms or the like.
- R 28 specific examples of the group represented by R 28 include groups represented by the following structures (a1) to (a27).
- “*” represents a binding site.
- the group represented by R 28 is a methylene group, an ethylene group, a 1-methylethylene group, a 2-methylethylene group, or a divalent alicyclic hydrocarbon having 4 to 20 carbon atoms.
- a group or a group derived therefrom is preferred.
- the monovalent organic group includes an acid dissociable group or a monovalent hydrocarbon group having 1 to 20 carbon atoms (provided that the acid dissociable group includes Except applicable).
- An acid-dissociable group is a group that replaces a hydrogen atom of a carboxyl group and is a group that dissociates in the presence of an acid.
- acid dissociable groups include a t-butoxycarbonyl group, a tetrahydropyranyl group, a tetrahydrofuranyl group, a (thiotetrahydropyranylsulfanyl) methyl group, a (thiotetrahydrofuranylsulfanyl) methyl group, and an alkoxy group.
- examples thereof include a substituted methyl group and an alkylsulfanyl-substituted methyl group.
- An example of the alkoxyl group (substituent) in the alkoxy-substituted methyl group is an alkoxyl group having 1 to 4 carbon atoms.
- alkyl group (substituent) in the alkylsulfanyl-substituted methyl group include alkyl groups having 1 to 4 carbon atoms.
- examples of the acid dissociable group include a group represented by the general formula (17): —C (R) 3 .
- three R's are each independently a linear or branched alkyl group having 1 to 4 carbon atoms or a monovalent alicyclic hydrocarbon having 4 to 20 carbon atoms.
- a divalent alicyclic hydrocarbon having 4 to 20 carbon atoms which is formed together with carbon atoms to which two R's are bonded to each other, each representing a group or a group derived therefrom A group or a group derived therefrom, and the remaining one R is a linear or branched alkyl group having 1 to 4 carbon atoms, or a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms, or A group derived therefrom is shown.
- examples of the linear or branched alkyl group having 1 to 4 carbon atoms include a methyl group, an ethyl group, an n-propyl group, and an i-propyl group.
- Examples of the monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms include norbornane, tricyclodecane, tetracyclododecane, adamantane, and cyclobutane, cyclopentane, cyclohexane, cycloheptane, cyclooctane and the like. Examples include groups consisting of alicyclic rings derived from alkanes. Further, examples of the group derived from an alicyclic hydrocarbon group include the above-described monovalent alicyclic hydrocarbon groups such as a methyl group, an ethyl group, an n-propyl group, an i-propyl group, and an n-butyl group.
- a group substituted by one or more of linear, branched or cyclic alkyl groups having 1 to 4 carbon atoms such as 2-methylpropyl group, 1-methylpropyl group, t-butyl group, etc.
- an alicyclic hydrocarbon group composed of an alicyclic ring derived from norbornane, tricyclodecane, tetracyclododecane, adamantane, cyclopentane, cyclohexane, or this alicyclic hydrocarbon group is substituted with the alkyl group. And the like.
- any two Rs are bonded to each other, and each of them is formed with a carbon atom (carbon atom bonded to an oxygen atom) to which each R is bonded.
- the hydrogen group include a monocyclic hydrocarbon group such as a cyclobutylene group, a cyclopentylene group, a cyclohexylene group, and a cyclooctylene group, a norbornylene group, a tricyclodecanylene group, and a tetracyclodecanylene group.
- Such polycyclic hydrocarbon groups and bridged polycyclic hydrocarbon groups such as adamantylene groups.
- the above-mentioned divalent alicyclic hydrocarbon group is, for example, a methyl group, an ethyl group, Linear, branched or cyclic alkyl groups having 1 to 4 carbon atoms such as n-propyl group, i-propyl group, n-butyl group, 2-methylpropyl group, 1-methylpropyl group and t-butyl group Or a group substituted with one or more of the above.
- a monocyclic hydrocarbon group such as a cyclopentylene group or a cyclohexylene group, or a group obtained by substituting the divalent alicyclic hydrocarbon group (monocyclic hydrocarbon group) with the alkyl group. Etc. are preferred.
- preferred examples of the acid dissociable group represented by the general formula (17) include t-butyl group, 1-n- (1-ethyl-1-methyl) propyl group, 1-n- (1, 1-dimethyl) propyl group, 1-n- (1,1-dimethyl) butyl group, 1-n- (1,1-dimethyl) pentyl group, 1- (1,1-diethyl) propyl group, 1-n -(1,1-diethyl) butyl group, 1-n- (1,1-diethyl) pentyl group, 1- (1-methyl) cyclopentyl group, 1- (1-ethyl) cyclopentyl group, 1- (1- n-propyl) cyclopentyl group, 1- (1-i-propyl) cyclopentyl group, 1- (1-methyl) cyclohexyl group, 1- (1-ethyl) cyclohexyl group, 1- (1-n-propyl) cyclohexyl group
- a group represented by the general formula (17) a t-butoxycarbonyl group, an alkoxy-substituted methyl group, and the like are preferable.
- An alkoxy-substituted methyl group and a group represented by the general formula (17) Is particularly preferred.
- examples of the methylene group substituted with a fluorine atom or the linear or branched fluoroalkylene group having 2 to 20 carbon atoms include (X— 1) to (X-8).
- the repeating unit (10) is preferably a repeating unit derived from the compounds represented by the formulas (10-1) to (10-6).
- the polymer (F) may contain only one type of repeating unit (10), or may contain two or more types.
- examples of the linking group represented by A include a single bond, an oxygen atom, a sulfur atom, a carbonyloxy group, an oxycarbonyl group, an amide group, a sulfonylamide group, and a urethane group.
- examples of the linear or branched alkyl group having 1 to 6 carbon atoms and having at least one fluorine atom include a methyl group, Ethyl group, 1-propyl group, 2-propyl group, 1-butyl group, 2-butyl group, 2- (2-methylpropyl) group, 1-pentyl group, 2-pentyl group, 3-pentyl group, 1- (2-methylbutyl) group, 1- (3-methylbutyl) group, 2- (2-methylbutyl) group, 2- (3-methylbutyl) group, neopentyl group, 1-hexyl group, 2-hexyl group, 3-hexyl Group, 1- (2-methylpentyl) group, 1- (3-methylpentyl) group, 1- (4-methylpentyl) group, 2- (2-methylpentyl) group, 2- (3-methylpentyl) group Group, 2- (4-methylpentyl) group, 3- Examples include
- Examples of the monovalent alicyclic hydrocarbon group having at least one fluorine atom and having 4 to 20 carbon atoms or a derivative thereof include, for example, a cyclopentyl group, a cyclopentylmethyl group, and 1- (1-cyclopentylethyl).
- Group 1- (2-cyclopentylethyl) group, cyclohexyl group, cyclohexylmethyl group, 1- (1-cyclohexylethyl) group, 1- (2-cyclohexylethyl group), cycloheptyl group, cycloheptylmethyl group, 1- Examples thereof include a partially fluorinated group or a perfluoroalkyl group of an alicyclic alkyl group such as a (1-cycloheptylethyl) group, a 1- (2-cycloheptylethyl) group, and a 2-norbornyl group.
- Preferred monomers that give the repeating unit (11) include, for example, trifluoromethyl (meth) acrylic acid ester, 2,2,2-trifluoroethyl (meth) acrylic acid ester, perfluoroethyl (meth) acrylic acid.
- the polymer (F) may contain only one type of repeating unit (11), or may contain two or more types.
- the content of the repeating unit (11) is usually 5 mol% or more, preferably 10 mol% or more, more preferably 15 mol% or more, assuming that all repeating units in the polymer (F) are 100 mol%. . If the content of the repeating unit (11) is less than 5 mol%, a receding contact angle of 70 ° or more may not be achieved, and elution of an acid generator or the like from the resist film may not be suppressed.
- the ratio of the repeating unit (1) contained in each polymer is preferably 10 to 90 mol%, more preferably 10 to 80 mol%, based on 100 mol% of the total repeating units contained in each polymer. 20 to 70 mol% is more preferable. If the ratio of the repeating unit (1) is less than 10 mol%, the resolution of the alkali developing portion may be deteriorated. On the other hand, if it exceeds 90 mol%, the developability of the alkali developing portion may be deteriorated.
- the ratio of the repeating unit (2) contained in each polymer is preferably 5 to 70 mol%, more preferably 5 to 65 mol%, based on 100 mol% of the total repeating units contained in each polymer. More preferably, it is 10 to 60 mol%. If the ratio of the repeating unit (2) is 5 mol% or less, the developability as a resist and the process margin may be lowered.
- the ratio of the repeating unit (3) contained in the polymer (B) is preferably 1 to 30 mol%, preferably 1 to 25 mol%, based on 100 mol% of the total repeating units contained in the polymer (B). It is more preferable. If the ratio of the repeating unit (3) is more than 30 mol%, the alkali developing part may be easily swollen by the alkali developer, or the solubility in the alkali developer may be reduced.
- the ratio of the repeating unit (7) contained in each polymer is preferably 30 mol% or less and more preferably 25 mol% or less with respect to 100 mol% of the total repeating units contained in each polymer. If the ratio of the repeating unit (7) is more than 30 mol%, a top loss of the resist pattern occurs, and the pattern shape may be deteriorated.
- the 1st positive radiation sensitive composition may contain 1 type of each polymer, and may contain 2 or more types.
- Each polymer for example, using a polymerizable unsaturated monomer that gives each repeating unit described above, a radical polymerization initiator such as hydroperoxides, dialkyl peroxides, diacyl peroxides, azo compounds, If necessary, it can be prepared by polymerization in an appropriate solvent in the presence of a chain transfer agent.
- a radical polymerization initiator such as hydroperoxides, dialkyl peroxides, diacyl peroxides, azo compounds, If necessary, it can be prepared by polymerization in an appropriate solvent in the presence of a chain transfer agent.
- Examples of the solvent used for the polymerization include alkanes such as n-pentane, n-hexane, n-heptane, n-octane, n-nonane, n-decane; cyclohexane, cycloheptane, cyclooctane, decalin, norbornane.
- Cycloalkanes such as benzene, toluene, xylene, ethylbenzene, cumene, etc .; aromatic hydrocarbons such as chlorobutane, bromohexane, dichloroethane, hexamethylene dibromide, chlorobenzene, etc .; ethyl acetate, acetic acid n- Saturated carboxylic acid esters such as butyl, i-butyl acetate and methyl propionate; ketones such as acetone, 2-butanone, 4-methyl-2-pentanone and 2-heptanone; tetrahydrofuran, dimethoxyethane, diethoxyethane and the like There are ethers. In addition, these solvents may be used individually by 1 type, and 2 or more types may be mixed and used for them.
- the weight average molecular weight in terms of polystyrene (hereinafter referred to as “Mw”) by gel permeation chromatography (GPC) of each polymer is not particularly limited, but is preferably 1,000 to 100,000. More preferably, it is 1,000 to 30,000, and still more preferably 1,000 to 20,000. If the Mw is less than 1,000, the heat resistance of the first resist layer may be reduced. On the other hand, if it exceeds 100,000, the developability of the alkali developing portion may be lowered.
- the ratio (Mw / Mn) of Mw of each polymer to the number average molecular weight (hereinafter referred to as “Mn”) in terms of polystyrene by gel permeation chromatography (GPC) of each polymer is usually 1 To 5, preferably 1 to 3.
- each polymer may contain a low molecular weight component derived from a monomer used in preparation.
- the content of this low molecular weight component is preferably 0.1% by mass or less, more preferably 0.07% by mass or less, and still more preferably 100% by mass (in terms of solid content) of each polymer. It is 0.05 mass% or less.
- the content ratio of the low molecular weight component is 0.1% by mass or less, it is possible to reduce the amount of the eluate in the immersion exposure liquid such as water that has been in contact with the immersion exposure.
- foreign matters are less likely to occur in the resist during resist storage, and coating unevenness is less likely to occur during resist application, so that the occurrence of defects during resist pattern formation can be sufficiently suppressed.
- low molecular weight component means a component having an Mw of 500 or less, and specifically includes a monomer, a dimer, a trimer, and an oligomer.
- the low molecular weight component can be removed by, for example, chemical purification methods such as washing with water and liquid-liquid extraction, or a combination of these chemical purification methods and physical purification methods such as ultrafiltration and centrifugation.
- the analysis can be performed by high performance liquid chromatography (HPLC).
- each polymer has few impurities such as halogen and metal. This is because the sensitivity, resolution, process stability, pattern shape and the like of the first resist layer to be formed can be further improved by reducing the impurities.
- Examples of the purification method for each polymer include chemical purification methods such as washing with water and liquid-liquid extraction, and combinations of these chemical purification methods with physical purification methods such as ultrafiltration and centrifugation.
- Acid generator (C) An acid generator (C) means what generate
- an acid dissociable group present in the polymer, specifically a repeating unit ( 1) The acid dissociable group of 1) is dissociated (the protecting group is eliminated).
- an acid generator (C) what contains the compound (henceforth "acid generator (1)") represented by General formula (9) is preferable.
- an acid generator (C) may contain 1 type of acid generators (1) individually, and may contain 2 or more types.
- the acid generator (1) is a compound represented by the general formula (9).
- R 14 represents a hydrogen atom, a fluorine atom, a hydroxyl group, a linear or branched alkyl group having 1 to 10 carbon atoms, or a linear or branched alkoxyl group having 1 to 10 carbon atoms. Or a linear or branched alkoxycarbonyl group having 2 to 11 carbon atoms.
- R 15 is a linear or branched alkyl group having 1 to 10 carbon atoms, a linear or branched alkoxyl group having 1 to 10 carbon atoms, or a linear or branched group having 1 to 10 carbon atoms. Or a cyclic alkanesulfonyl group.
- R 16 are independently of each other, linear or branched alkyl group having 1 to 10 carbon atoms, or a phenyl group, or naphthyl group, or two R 16 are formed are bonded to each other A divalent group having 2 to 10 carbon atoms containing a sulfur cation.
- the phenyl group, the naphthyl group, and the divalent group having 2 to 10 carbon atoms may have a substituent.
- k represents an integer of 0 to 2
- r represents an integer of 0 to 10 (preferably an integer of 0 to 2).
- X ⁇ represents an anion represented by the general formulas (12-1) to (12-4).
- R 17 represents a fluorine atom or an optionally substituted hydrocarbon group having 1 to 12 carbon atoms.
- q represents an integer of 1 to 10.
- R 18 independently of each other represents a linear or branched alkyl group having 1 to 10 carbon atoms substituted with a fluorine atom, or A divalent organic group having 2 to 10 carbon atoms and substituted with a fluorine atom, which is formed by bonding two R 18 to each other.
- the C 2-10 divalent organic group substituted with a fluorine atom may have a substituent other than a fluorine atom.
- the acid generator (C) may contain a radiation sensitive acid generator other than the acid generator (1) (hereinafter referred to as “acid generator (2)”).
- Acid generator (2) examples include onium salt compounds, halogen-containing compounds, diazoketone compounds, sulfone compounds, and sulfonic acid compounds.
- an acid generator (C) may contain 1 type of acid generators (2) individually, and may contain 2 or more types.
- the content of the acid generator (C) is usually 0.1 to 20 parts by mass with respect to 100 parts by mass of the polymer (A) from the viewpoint of ensuring the sensitivity and developability as a resist, preferably 0.5 to 10 parts by mass. If the content is less than 0.1 parts by mass, the sensitivity and developability tend to be lowered. On the other hand, if it exceeds 20 parts by mass, the transparency to radiation is lowered, and it tends to be difficult to obtain a rectangular resist pattern.
- the usage-ratio is 80 mass% or less normally with respect to 100 mass% of acid generators (C), Preferably it is 60 mass% or less.
- Solvent (D) examples include 2-butanone, 2-pentanone, 3-methyl-2-butanone, 2-hexanone, 4-methyl-2-pentanone, 3-methyl-2-pentanone, 3,3-dimethyl.
- ketones such as 2-butanone, 2-heptanone, 2-octanone; cyclopentanone, 3-methylcyclopentanone, cyclohexanone, 2-methylcyclohexanone, 2,6-dimethylcyclohexanone, isophorone Cyclic ketones such as: propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol mono-n-propyl ether acetate, propylene glycol mono-i-propyl ether acetate, propylene glycol mono-n-butyl ether Propylene glycol monoalkyl ether acetates such as cetate, propylene glycol mono-i-butyl ether acetate, propylene glycol mono-sec-butyl ether acetate, propylene glycol mono-t-butyl ether acetate; methyl 2-hydroxypropionate, 2-hydroxypropionic acid E
- n-propyl alcohol i-propyl alcohol, n-butyl alcohol, t-butyl alcohol, cyclohexanol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol mono-n-propyl ether, ethylene glycol mono-n-butyl ether , Diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol di-n-propyl ether, diethylene glycol di-n-butyl ether, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol mono-n-propyl ether acetate, propylene glycol monomethyl ether , Propylene glycol monoethyl Ether, propylene glycol mono-n-propyl ether, toluene, xylene, ethyl 2-hydroxy-2-methylpropionate, ethyl eth
- linear or branched ketones, cyclic ketones, propylene glycol monoalkyl ether acetates, alkyl 2-hydroxypropionate, alkyl 3-alkoxypropionate, ⁇ -butyrolactone and the like are preferable.
- the first positive radiation sensitive composition may contain one type of solvent (D) or two or more types.
- the amount of the solvent (D) used is such that the total solid concentration of the first positive radiation-sensitive composition is usually 1 to 50% by mass, preferably 1 to 25% by mass. is there.
- the first positive radiation-sensitive composition contains various additives such as an acid diffusion controller, an alicyclic additive, a surfactant, and a sensitizer as necessary. Also good.
- the acid diffusion control agent controls the diffusion phenomenon in the first resist layer of the acid generated from the acid generator (C) by exposure, and suppresses an undesirable chemical reaction in a non-exposed region. It is a component having By containing such an acid diffusion controller, the storage stability of the first positive radiation-sensitive composition is improved. In addition, the resolution as a resist is further improved, and it is possible to suppress changes in the line width of the resist pattern due to fluctuations in the holding time (PED) from exposure to post-exposure heat treatment, and an extremely excellent process stability. Things are obtained.
- Examples of the acid diffusion controller include amine compounds, amide group-containing compounds, urea compounds, and nitrogen-containing heterocyclic compounds.
- amine compound Preferred examples of the amine compound include mono (cyclo) alkylamines such as n-hexylamine, n-heptylamine, n-octylamine, n-nonylamine, n-decylamine, cyclohexylamine; di-n-butylamine, di- Di (cyclopentylamine) such as -n-pentylamine, di-n-hexylamine, di-n-heptylamine, di-n-octylamine, di-n-nonylamine, di-n-decylamine, cyclohexylmethylamine, dicyclohexylamine ) Alkylamines; triethylamine, tri-n-propylamine, tri-n-butylamine, tri-n-pentylamine, tri-n-hexylamine, tri-n-heptylamine, tri-n-octylamine
- amide group-containing compound Preferable examples of the amide group-containing compound include Nt-butoxycarbonyldi-n-octylamine, Nt-butoxycarbonyldi-n-nonylamine, Nt-butoxycarbonyldi-n-decylamine, Nt -Butoxycarbonyldicyclohexylamine, Nt-butoxycarbonyl-1-adamantylamine, Nt-butoxycarbonyl-2-adamantylamine, Nt-butoxycarbonyl-N-methyl-1-adamantylamine, (S)- ( ⁇ )-1- (t-butoxycarbonyl) -2-pyrrolidinemethanol, (R)-(+)-1- (t-butoxycarbonyl) -2-pyrrolidinemethanol, Nt-butoxycarbonyl-4-hydroxy Piperidine, Nt-butoxycarbonylpyrrolidine, Nt-butoxycarbonyl Perazine, Nt-butoxycarbonylpiperidine
- urea compounds include urea, methylurea, 1,1-dimethylurea, 1,3-dimethylurea, 1,1,3,3-tetramethylurea, 1,3-diphenylurea, tri-n-butyl. There is thiourea.
- nitrogen-containing heterocyclic compounds Preferable examples of the nitrogen-containing heterocyclic compound include imidazole, 4-methylimidazole, 4-methyl-2-phenylimidazole, benzimidazole, 2-phenylbenzimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2.
- -Imidazoles such as methyl-1H-imidazole; pyridine, 2-methylpyridine, 4-methylpyridine, 2-ethylpyridine, 4-ethylpyridine, 2-phenylpyridine, 4-phenylpyridine, 2-methyl-4-phenyl Pyridines such as pyridine, nicotine, nicotinic acid, nicotinamide, quinoline, 4-hydroxyquinoline, 8-oxyquinoline, acridine, 2,2 ′: 6 ′, 2 ′′ -terpyridine; piperazine, 1- (2- In addition to piperazines such as hydroxyethyl) piperazine, pyrazine , Pyrazole, pyridazine, quinosaline, purine, pyrrolidine, piperidine, piperidine ethanol, 3-piperidino-1,2-propanediol, morpholine, 4-methylmorpholine, 1- (4-morpholinyl) ethanol, 4-acetylmorpholine, 3- (N
- a photodegradable base that is exposed to light and generates a base can be used.
- Photodegradable base As an example of the photodegradable base, there is an onium salt compound that is decomposed by exposure and loses acid diffusion controllability. Specific examples of such an onium salt compound include a sulfonium salt compound represented by the general formula (13) and an iodonium salt compound represented by the general formula (14).
- R 19 to R 21 in the general formula (13) and R 22 to R 23 in the general formula (14) each independently represent a hydrogen atom, an alkyl group, an alkoxyl group, a hydroxyl group, or a halogen atom.
- Z ⁇ represents OH ⁇ , R 24 —COO ⁇ , R 24 —SO 3 ⁇ (wherein R 24 represents an alkyl group, an aryl group, or an alkaryl group.
- R 26 represents a linear or branched alkyl group having 1 to 12 carbon atoms, which is substituted or unsubstituted with a fluorine atom, or a linear or branched alkoxyl having 1 to 12 carbon atoms. Represents a group, and n represents 1 or 2.
- these acid diffusion control agents may be used individually by 1 type, and 2 or more types may be mixed and used for them.
- the content of the acid diffusion control agent is preferably 0.001 to 15 parts by mass, more preferably 0.01 to 10 parts by mass with respect to 100 parts by mass of the polymer (A). More preferably, it is from 05 to 5 parts by mass. If the content is more than 15 parts by mass, the sensitivity as a resist may decrease. On the other hand, if it is less than 0.001 part by mass, the pattern shape and dimensional fidelity as a resist may be lowered depending on the process conditions.
- Alicyclic additive is a component that exhibits an action of further improving dry etching resistance, pattern shape, adhesion to a substrate, and the like.
- alicyclic additives include 1-adamantanecarboxylic acid, 2-adamantanone, 1-adamantanecarboxylic acid t-butyl, 1-adamantanecarboxylic acid t-butoxycarbonylmethyl, 1-adamantanecarboxylic acid ⁇ -butyrolactone ester 1,3-adamantane dicarboxylate di-t-butyl, 1-adamantane acetate t-butyl, 1-adamantane acetate t-butoxycarbonylmethyl, 1,3-adamantane diacetate di-t-butyl, 2,5-dimethyl Adamantane derivatives such as -2,5-di (adamantylcarbonyloxy) hexane; t-butyl deoxycholate, t-butoxycarbonylmethyl deoxycholic acid, 2-ethoxyethyl deoxycholic acid, 2-cyclohexyloxyethyl deoxy
- surfactant is a component that exhibits an effect of improving coatability, striation, developability, and the like.
- surfactant examples include polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene n-octylphenyl ether, polyoxyethylene n-nonylphenyl ether, polyethylene glycol dilaurate, polyethylene glycol
- nonionic surfactants such as distearate, KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.), Polyflow No. 75, no.
- Sensitizer absorbs radiation energy and transmits the energy to the acid generator (C), thereby increasing the amount of acid produced. It has the effect of improving the apparent sensitivity of the positive radiation sensitive composition.
- Sensitizers include carbazoles, acetophenones, benzophenones, naphthalenes, phenols, biacetyl, eosin, rose bengal, pyrenes, anthracenes, phenothiazines, and the like. In addition, these sensitizers may be used individually by 1 type, and 2 or more types may be mixed and used for them.
- the first positive radiation sensitive composition may contain additives other than the additives described above (hereinafter referred to as “other additives”).
- Other additives include alkali-soluble resins, low-molecular alkali-solubility control agents having acid-dissociable protecting groups, antihalation agents, storage stabilizers, antifoaming agents, and the like.
- a dye or a pigment by including a dye or a pigment, the latent image of the exposed portion can be visualized, and the influence of halation during exposure can be reduced.
- substrate can be improved by containing an adhesion assistant.
- the first positive-type radiation-sensitive composition is prepared as a coating liquid by, for example, filtering through a filter having a pore size of about 0.2 ⁇ m after the respective constituent components are dissolved in the solvent (D), and applied onto the substrate. be able to.
- the second positive-type radiation-sensitive composition used when forming the second resist layer is a polymer (a) (hereinafter referred to as alkali-soluble by the action of an acid). , Described as “polymer (a)”) and a solvent (b).
- the polymer (a) is an alkali-insoluble or alkali-insoluble polymer that becomes alkali-soluble by the action of an acid.
- the polymer (a) is not particularly limited as long as it becomes alkali-soluble by the action of an acid, but the repeating unit represented by the general formula (16) (hereinafter referred to as “repeating unit (16)”) and And those containing the repeating unit (1).
- R 24 represents a hydrogen atom, a methyl group or a trifluoromethyl group
- R 25 represents a single bond, a methylene group, a linear or branched alkylene group having 2 to 6 carbon atoms, Or an alicyclic alkylene group having 4 to 12 carbon atoms.
- the monomer giving the repeating unit (16) include (meth) acrylic acid (1,1,1-trifluoro-2-trifluoromethyl-2-hydroxy-3-propyl) ester, (meth) Acrylic acid (1,1,1-trifluoro-2-trifluoromethyl-2-hydroxy-4-butyl) ester, (meth) acrylic acid (1,1,1-trifluoro-2-trifluoromethyl-2 -Hydroxy-5-pentyl) ester, (meth) acrylic acid (1,1,1-trifluoro-2-trifluoromethyl-2-hydroxy-4-pentyl) ester, (meth) acrylic acid 2-((5 -(1 ', 1', 1'-trifluoro-2'-trifluoromethyl-2'-hydroxy) propyl) bicyclo [2.2.1] heptyl) ester, (meth) acrylic acid 3- (8- (1 ', 1', 1'-trifluoro-2'-trifluoromethyl
- the polymer (a) may contain only one type of repeating unit (16) or may contain two or more types.
- repeating unit (1) is the same as the repeating unit (1) contained in the polymer (A) described in the first positive radiation-sensitive composition.
- the resin (a) may contain other repeating units in addition to the repeating unit (16) and the repeating unit (1).
- the ratio of the repeating unit (16) contained in the polymer (a) is preferably 30 to 90 mol%, preferably 30 to 80 mol% with respect to 100 mol% in total of the repeating units contained in the polymer (a). More preferred is 40 to 80 mol%. If the ratio of the repeating unit (16) is less than 30 mol%, the solubility of the polymer (a) in the solvent (b) may be lowered. On the other hand, if it exceeds 90 mol%, the resolution of the alkali developing part may be deteriorated.
- the ratio of the repeating unit (1) contained in the polymer (a) is preferably 10 to 70 mol% with respect to 100 mol% in total of the repeating units contained in the polymer (a), and is preferably 10 to 60 mol%. More preferably, it is more preferably 20 to 60 mol%. If the ratio of the repeating unit (1) is less than 10 mol%, the resolution of the alkali developing portion may be deteriorated. On the other hand, if it exceeds 70 mol%, the developability of the alkali developing portion may be deteriorated.
- the proportion of other repeating units contained in the polymer (a) is preferably 50 mol% or less, preferably 40 mol% or less, with respect to 100 mol% in total of the repeating units contained in the polymer (a). More preferred.
- the second positive radiation sensitive composition may contain one kind of resin (a) or two or more kinds.
- the polymer (a) can be prepared in the same manner as the polymer (A) or the polymer (B), for example, using a polymerizable unsaturated monomer that gives each repeating unit.
- the Mw of the resin (a) is not particularly limited, but is preferably 1,000 to 100,000, more preferably 1,000 to 30,000, and 1,000 to 20,000. Further preferred. When the Mw of the polymer (a) is less than 1,000, when the second resist layer is formed, the heat resistance may be lowered. On the other hand, if it exceeds 100,000, the developability of the alkali developing portion may be lowered.
- the ratio (Mw / Mn) between Mw and Mn of the polymer (a) is usually 1 to 5, preferably 1 to 3.
- the polymer (a) may contain a low molecular weight component derived from a monomer used in preparation.
- the content ratio of the low molecular weight component is preferably 0.1% by mass or less, more preferably 0.07% by mass or less, with respect to 100% by mass (in terms of solid content) of the polymer (a). More preferably, it is 0.05 mass% or less.
- the content ratio of the low molecular weight component is 0.1% by mass or less, it is possible to reduce the amount of the eluate in the immersion exposure liquid such as water that is in contact with the immersion exposure. Furthermore, foreign matters are not generated in the resist during resist storage, and coating unevenness does not occur during resist application, and the occurrence of defects during resist pattern formation can be sufficiently suppressed.
- the polymer (a) is preferably one having few impurities such as halogen and metal.
- impurities such as halogen and metal.
- Solvent (b) Although it does not restrict
- the amount of the solvent (b) used is such that the total solid content of the second positive-type radiation-sensitive composition is usually 1 to 50% by mass, preferably 1 to 25% by mass. is there.
- the second positive radiation sensitive composition usually contains a radiation sensitive acid generator.
- the radiation-sensitive acid generator can be the same as the acid generator (C) in the first positive radiation-sensitive composition described above.
- the acid generator (C) contained in the first positive radiation sensitive composition and the radiation sensitive acid generator contained in the second positive radiation sensitive composition are the same. May be good or different.
- the content of the radiation sensitive acid generator is usually 0.1 to 20 parts by mass, preferably 100 to 20 parts by mass with respect to 100 parts by mass of the polymer (a), from the viewpoint of ensuring sensitivity and developability as a resist. 0.5 to 10 parts by mass. If the content is less than 0.1 parts by mass, the sensitivity and developability tend to be lowered. On the other hand, if it exceeds 20 parts by mass, the transparency to radiation is lowered, and it becomes difficult to obtain a rectangular second resist pattern.
- a radiation sensitive acid generator contains an acid generator (1) and another acid generator
- its use ratio is usually 80% by mass or less with respect to 100% by mass of the radiation sensitive acid generator. , Preferably it is 60 mass% or less.
- the second positive radiation-sensitive composition may contain an additive.
- this additive the same thing as various additives, such as the acid diffusion control agent mentioned above in the 1st positive radiation sensitive composition, can be said.
- the content thereof is 0.001 to 15 parts by mass with respect to 100 parts by mass of the polymer (a). Is preferably 0.01 to 10 parts by mass, and more preferably 0.05 to 5 parts by mass. When the content exceeds 15 parts by mass, the sensitivity as a resist may be lowered. On the other hand, if it is less than 0.001 part by mass, the pattern shape and dimensional fidelity as a resist may be lowered depending on the process conditions.
- the second positive-type radiation-sensitive composition is prepared as a coating liquid by, for example, filtering with a filter having a pore size of about 0.2 ⁇ m after the respective components are dissolved in the solvent (b), and applied onto the substrate. be able to.
- Retreat contact angle (°) A positive radiation sensitive composition was spin coated on a Si substrate by “CLEAN TRACK ACT8”, pre-baked (PB) at 100 ° C. for 60 seconds, and a film thickness of 100 nm A film was formed. Thereafter, using a “DSA-10” manufactured by KRUS, the receding contact angle was measured according to the following procedure in an environment of room temperature 23 ° C., humidity 45%, and normal pressure. First, the wafer stage position of the product name “DSA-10” (manufactured by KRUS) is adjusted, and the substrate is set on the adjusted stage. Next, water is injected into the needle, and the position of the needle is finely adjusted to an initial position where water droplets can be formed on the set substrate.
- the contact angle was measured by the following procedure in an environment of room temperature 23 ° C., humidity 45%, and normal pressure. First, the wafer stage position of the product name “DSA-10” (manufactured by KRUS) is adjusted, and the substrate is set on the adjusted stage. Next, a developer is injected into the needle, and the position of the needle is finely adjusted to an initial position where droplets can be formed on the set substrate. Thereafter, the developer is discharged from the needle to form a 25 ⁇ L droplet on the substrate, and the contact angle between the liquid surface and the substrate is measured.
- polymer (A-1) This polymer (A-1) has Mw of 10,000 and Mw / Mn of 1.5.
- polymer (B-1) This polymer (B-1) has an Mw of 5000 and an Mw / Mn of 1.6.
- ethyl methyl ketone 50 g was added to a 500 mL three-necked flask equipped with a thermometer and a dropping funnel, and purged with nitrogen for 30 minutes. Then, it heated so that it might become 80 degreeC, stirring the inside of a flask with a magnetic stirrer. Next, the monomer solution was dropped into the flask over 3 hours using a dropping funnel. After completion of dropping, the mixture was aged for 3 hours and then cooled to 30 ° C. or lower to obtain a polymer solution.
- the polymer in this propylene glycol monomethyl ether acetate solution is referred to as polymer (F-1).
- the polymer (F-1) has an Mw of 6500 and an Mw / Mn of 1.7.
- Polymers (A-2) to (A-7) were prepared in the same manner as in Polymerization Example 1 except that the monomers were used in the formulation shown in Table 1.
- Table 2 the composition ratio, weight average molecular weight (Mw) and dispersity (Mw / Mn) of the polymers (A-1) to (A-7) by 13 C-NMR are also shown.
- Polymers (B-2) to (B-8) were prepared in the same manner as in Polymerization Example 8 except that the monomers were used in the formulation shown in Table 1.
- Table 2 the composition ratio, weight average molecular weight (Mw) and dispersity (Mw / Mn) of the polymers (B-2) to (B-8) by 13 C-NMR are also shown.
- Polymers (F-2) to (F-14) were prepared in the same manner as in Polymerization Example 16 except that the monomers were used in the formulation shown in Table 1.
- Table 2 the composition ratio, weight average molecular weight (Mw) and dispersity (Mw / Mn) of the polymers (F-1) to (F-14) by 13 C-NMR are also shown.
- Example 1 Preparation of first positive radiation-sensitive composition
- the coating liquid (1) which consists of a 1st positive radiation sensitive composition was prepared by filtering using a membrane filter with a hole diameter of 200 nm.
- Examples 2 to 18, Comparative Examples 1 to 5 Each coating solution was prepared in the same manner as in Example 1 except that the formulation described in Table 3 was used.
- the usage-amount of each component is a value with respect to 100 parts of total amounts of a polymer (A) and a polymer (B).
- Acid generator (C-1) Triphenylsulfonium nonafluoro-n-butanesulfonate
- Second positive radiation sensitive composition 100 parts of polymer (B-9) represented by the following formula (B-9) as resin (a), 7.0 parts of triphenylsulfonium nonafluoro-n-butanesulfonate as a radiation sensitive acid generator, acid diffusion 2.64 parts of the compound (E-2) as an inhibitor (E) and 2014 parts of propylene glycol monomethyl ether acetate as a solvent (b) were added, and the respective components were mixed to obtain a homogeneous solution. Then, the coating liquid (24) which consists of a 2nd positive radiation sensitive composition was prepared by filtering using a membrane filter with a hole diameter of 200 nm. The polymer (B-9) was prepared in the same manner as in Polymerization Example 8 described above. This polymer (B-9) was a copolymer having Mw of 4800 and Mw / Mn of 1.5.
- polymer (B-10) represented by the following formula (B-10) as resin (a)
- 7.0 parts of triphenylsulfonium nonafluoro-n-butanesulfonate as a radiation sensitive acid generator acid diffusion 2.64 parts of the compound (E-2) as an inhibitor (E) and 2014 parts of propylene glycol monomethyl ether acetate as a solvent (b) were added, and the respective components were mixed to obtain a homogeneous solution.
- the coating liquid (25) which consists of a 2nd positive radiation sensitive composition was prepared by filtering using a membrane filter with a hole diameter of 200 nm.
- the polymer (B-10) was prepared in the same manner as in Polymerization Example 1 described above. This polymer (B-10) was a copolymer having Mw of 4800 and Mw / Mn of 1.5.
- Example 19 Formation of Resist Pattern A 12-inch silicon wafer was spin-coated with a lower antireflection film (trade name “ARC29A”, manufactured by Brewer Science) using a trade name “Lithius Pro-i” (manufactured by Tokyo Electron), and then PB ( (205 ° C., 60 seconds) to form a 77 nm thick coating film. After spin-coating the coating liquid (1) (first positive radiation sensitive composition) prepared in Example 1 using the trade name “CLEAN TRACK ACT12” and PB (130 ° C., 60 seconds) The first resist layer having a film thickness of 90 nm was formed by cooling (23 ° C., 30 seconds).
- the first resist pattern of the obtained evaluation substrate A was subjected to PDB (200 ° C., 60 seconds) on a hot plate with a trade name “CLEAN TRACK ACT12” to obtain an evaluation substrate B.
- the coating liquid (24) (second positive radiation sensitive composition) on the evaluation substrate B using the trade name “CLEAN TRACK ACT12” and PB (100 ° C., 60 seconds) Then, it was cooled (23 ° C., 30 seconds) to form a second resist layer having a thickness of 90 nm.
- an ArF immersion exposure apparatus (trade name “S610C”, manufactured by NIKON) under the optical conditions of NA: 1.30 and Dipole, the first resist is passed through a mask having a mask size of 45 nm line / 120 nm pitch. The space portion of the pattern was exposed.
- Example 20 to 40 Except what was described in Table 4, it carried out similarly to Example 19, and obtained each board
- the evaluation results of the obtained evaluation substrates C are also shown in Table 4.
- the 48 nm line / 96 nm pitch is crossed with respect to the first resist pattern exposed through the mask having the mask size of 48 nm line / 96 nm pitch (48 nm 1 L / 1S). It exposed through the mask of the mask size (48nm1L / 1S).
- the DP pattern is good and the wavelength limit is exceeded without performing large line width fluctuations.
- a pattern can be formed.
- a pattern exceeding the wavelength limit can be formed satisfactorily and economically. It can be used very suitably in the field of microfabrication represented by the manufacture of elements.
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Abstract
Description
本発明のレジストパターン形成方法は、工程(1)~(3)を含む方法である。工程(1)~(3)を含む本発明のレジストパターン形成方法の一実施形態について図面を用いて説明する。なお、本明細書中、「ラインパターン」とは、レジストパターンが、ライン部分とスペース部分とを有するライン・アンド・スペースパターンをいう(以下、「LS」ともいう)。
図1A~Cは、本発明に係るレジストパターン形成方法における、工程(1)の一例を示す模式図である。工程(1)では、先ず、図1Aに示すように、第一のポジ型感放射線性組成物を用いて、基板1上に第一のレジスト層2を形成する。次に、図1Bに示すように、所用の領域に所定パターンのマスク4を介し、任意に、水等の液浸露光用液体3を介して、放射線の照射(図の矢印)による露光を行い、第一のレジスト層2にアルカリ現像部5を形成する。その後、現像することにより、図1Cに示すように、基板1上にライン部分14及びスペース部分13を有する第一のレジストパターン12(1L3S:1ラインに対して3ライン分のスペース)を形成することができる。
第一のレジスト層2は、第一のポジ型感放射線性組成物を基板1上に塗布することで形成することができる。塗布する方法は、特に限定されるものではなく、回転塗布、流延塗布、ロール塗布等の適宜の塗布手段によって行うことができる。なお、形成される第一のレジスト層2の厚さは特に限定されるものではないが、通常、10~1000nmであり、10~500nmであることが好ましい。
第一のポジ型感放射線性組成物は、後述する本発明のポジ型感放射線性組成物である。
基板としては、特に限定されるものではなく、例えば、シリコンウェハ、アルミニウムで被覆されたウェハ等の従来公知の基板を使用することができる。また、第一のポジ型感放射線性組成物の潜在能力を最大限に引き出すために、例えば、特公平6-12452号公報や特開昭59-93448号公報等に開示されているように、使用される基板上に有機系或いは無機系の反射防止膜を形成しておくこともできる。
図1Bに示すように、第一のレジスト層2の所用領域に、所定パターンのマスク4を介して、放射線の照射による露光を行い、第一のレジスト層2にアルカリ現像部5を形成する。なお、露光の際に、任意に水やフッ素系不活性液体等の液浸露光用液体3を介しても良い。
第一のレジスト層を現像液で現像することにより、アルカリ現像部が溶解して、図1Cに示すような、ライン部分14及びスペース部分13を有するポジ型の第一のレジストパターン12を形成することができる。なお、現像液で現像した後は、一般に、水で洗浄し、乾燥させる。
図2は、本発明に係るレジストパターン形成方法における、工程(2)の一例を示す模式図である。図2に示すように、工程(1)で形成した第一のレジストパターンに対して、120℃以上、好ましくは140℃以上の温度でのベーク、及び/又は、放射線の照射、好ましくは300nm以下の波長の光の暴露により(図の矢印)、第一のレジストパターンを、光又は熱に対して不活性化させることにより、第二のポジ型感放射線性組成物に対して不溶化された第一のレジストパターン22とする。
図3A~図3Cは、本発明に係るレジストパターン形成方法における、工程(3)の一例を示す模式図である。工程(3)では、先ず、図3Aに示すように、第二のポジ型感放射線性組成物を用いて第一のレジストパターン22が形成された基板1上に、第二のレジスト層32を形成する。次に、図3Bに示すように、第一のレジストパターン22のスペース部分に所定パターンのマスク34を介し、任意に、水等の液浸露光用液体33を介して、放射線の照射(図の矢印)による露光を行い、第二のレジスト層32にアルカリ現像部35を形成する。最後に、図3Cに示すように、現像することにより、第一のレジストパターン22が形成された基板1のスペース部分に、第二のレジストパターン42を形成することができる。なお、「第一のレジストパターン22のスペース部分」とは、工程(1)の現像時にアルカリ現像部5が溶解することで、第一のレジスト層2が剥離された部分をいう。
第二のレジスト層は、第二のポジ型感放射線性組成物を第一のレジストパターンが形成された基板上に塗布することで形成することができる。塗布する方法は、特に限定されるものではなく、回転塗布、流延塗布、ロール塗布等の適宜の塗布手段によって行うことができる。なお、第二のレジスト層の厚さは特に限定されないが、通常、10~1000nmであり、10~500nmであることが好ましい。
次いで、この工程(3)では、図3Bに示すように、第二のレジスト層32が形成された基板1上の第一のレジストパターン22のスペース部分に、所定パターンのマスク34を介して、放射線の照射による露光を行い、第二のレジスト層32にアルカリ現像部35を形成する。なお、露光の際に、任意に水やフッ素系不活性液体等の液浸露光用液体33を介しても良い。また、露光条件等は、工程(1)で前述した露光条件等と同様のことがいえる。
第二のレジスト層を現像液で現像することにより、アルカリ現像部が溶解して、図3Cに示すような、第一のレジストパターン22と第二のレジストパターンが交互に並んだ1L1Sのレジストパターンを形成することができる。なお、現像液で現像した後は、一般に、水で洗浄し、乾燥させる。また、現像方法については、工程(1)で前述した現像方法と同様のことがいえる。
ポジ型感放射線性組成物は、露光により酸発生剤から発生した酸の作用によって、組成物中に存する酸解離性基が解離してカルボキシル基を生じ、その結果、露光部がアルカリ現像液に対して溶解性が高くなり、アルカリ現像液によって溶解、除去され、ポジ型のレジストパターンを形成することができるものである。以下、第一のレジスト層を形成する際に使用され、本発明のポジ型感放射線性組成物である第一のポジ型感放射線性組成物と、第二のレジスト層を形成する際に使用される第二のポジ型感放射線性組成物について別途記載する。
第一のポジ型感放射線性組成物は、酸不安定基及び架橋基を有する重合体(B)(以下、「重合体(B)」と記載する)と、感放射線性酸発生剤(C)(以下、「酸発生剤(C)」と記載する)と、溶剤(D)と、を含有するものであり、酸不安定基を有し、架橋基を有しない重合体(A)(以下、「重合体(A)」と記載する)を含有するものであることが好ましい。また、第一のレジストパターンを形成した後に、300nm以下の波長の光の暴露により、及び/又は、140℃以上の温度での加熱により、第一のレジストパターンを光又は熱に対して不活性化させることにより、第一のレジストパターンの第二のレジスト層に対する耐性を向上させて、第二のレジストパターン形成時にダメージを受けることなく残存するものであることが好ましい。
第一のポジ型感放射線性組成物は、重合体(A)を含有することが好ましい。重合体(A)を含有することで、酸の作用によりアルカリ現像液に対して溶解する第一のレジスト層を形成することができる。
繰り返し単位(1)を与える単量体の好適例としては、(メタ)アクリル酸2-メチルアダマンチル-2-イルエステル、(メタ)アクリル酸2-メチル-3-ヒドロキシアダマンチル-2-イルエステル、(メタ)アクリル酸2-エチルアダマンチル-2-イルエステル、(メタ)アクリル酸2-エチル-3-ヒドロキシアダマンチル-2-イルエステル、(メタ)アクリル酸2-n-プロピルアダマンチル-2-イルエステル、(メタ)アクリル酸2-イソプロピルアダマンチル-2-イルエステル、(メタ)アクリル酸-2-メチルビシクロ[2.2.1]ヘプト-2-イルエステル、(メタ)アクリル酸-2-エチルビシクロ[2.2.1]ヘプト-2-イルエステル、(メタ)アクリル酸-8-メチルトリシクロ[5.2.1.02,6]デカン-8-イルエステル、(メタ)アクリル酸-8-エチルトリシクロ[5.2.1.02,6]デカン-8-イルエステル、(メタ)アクリル酸-4-メチルテトラシクロ[6.2.1.13,6.02,7]ドデカン-4-イルエステル、(メタ)アクリル酸-4-エチルテトラシクロ[6.2.1.13,6.02,7]ドデカン-4-イルエステル、(メタ)アクリル酸1-(ビシクロ[2.2.1]ヘプト-2-イル)-1-メチルエチルエステル、(メタ)アクリル酸1-(トリシクロ[5.2.1.02,6]デカン-8-イル)-1-メチルエチルエステル、(メタ)アクリル酸1-(テトラシクロ[6.2.1.13,6.02,7]ドデカン-4-イル)-1-メチルエチルエステル、(メタ)アクリル酸1-(アダマンタン-1-イル)-1-メチルエチルエステル、(メタ)アクリル酸1-(3-ヒドロキシアダマンタン-1-イル)-1-メチルエチルエステル、(メタ)アクリル酸1,1-ジシクロヘキシルエチルエステル、(メタ)アクリル酸1,1-ジ(ビシクロ[2.2.1]ヘプト-2-イル)エチルエステル、(メタ)アクリル酸1,1-ジ(トリシクロ[5.2.1.02,6]デカン-8-イル)エチルエステル、(メタ)アクリル酸1,1-ジ(テトラシクロ[6.2.1.13,6.02,7]ドデカン-4-イル)エチルエステル、(メタ)アクリル酸1,1-ジ(アダマンタン-1-イル)エチルエステル、(メタ)アクリル酸1-メチル-1-シクロペンチルエステル、(メタ)アクリル酸1-エチル-1-シクロペンチルエステル、(メタ)アクリル酸1-メチル-1-シクロヘキシルエステル、(メタ)アクリル酸1-エチル-1-シクロヘキシルエステル等がある。なお、本明細書中、「(メタ)アクリル酸」とは、アクリル酸及びメタアクリル酸の両方をいう。
繰り返し単位(2)を与える単量体の好適例としては、(メタ)アクリル酸-5-オキソ-4-オキサ-トリシクロ[4.2.1.03,7]ノナ-2-イルエステル、(メタ)アクリル酸-9-メトキシカルボニル-5-オキソ-4-オキサ-トリシクロ[4.2.1.03,7]ノナ-2-イルエステル、(メタ)アクリル酸-5-オキソ-4-オキサ-トリシクロ[5.2.1.03,8]デカ-2-イルエステル、(メタ)アクリル酸-10-メトキシカルボニル-5-オキソ-4-オキサ-トリシクロ[5.2.1.03,8]デカ-2-イルエステル、(メタ)アクリル酸-6-オキソ-7-オキサ-ビシクロ[3.2.1]オクタ-2-イルエステル、(メタ)アクリル酸-4-メトキシカルボニル-6-オキソ-7-オキサ-ビシクロ[3.2.1]オクタ-2-イルエステル、(メタ)アクリル酸-7-オキソ-8-オキサ-ビシクロ[3.3.1]ノナ-2-イルエステル、(メタ)アクリル酸-4-メトキシカルボニル-7-オキソ-8-オキサ-ビシクロ[3.3.1]ノナ-2-イルエステル、(メタ)アクリル酸-2-オキソテトラヒドロピラン-4-イルエステル、(メタ)アクリル酸-4-メチル-2-オキソテトラヒドロピラン-4-イルエステル、(メタ)アクリル酸-4-エチル-2-オキソテトラヒドロピラン-4-イルエステル、(メタ)アクリル酸-4-プロピル-2-オキソテトラヒドロピラン-4-イルエステル、(メタ)アクリル酸-5-オキソテトラヒドロフラン-3-イルエステル、(メタ)アクリル酸-2,2-ジメチル-5-オキソテトラヒドロフラン-3-イルエステル、(メタ)アクリル酸-4,4-ジメチル-5-オキソテトラヒドロフラン-3-イルエステル、(メタ)アクリル酸-2-オキソテトラヒドロフラン-3-イルエステル、(メタ)アクリル酸-4,4-ジメチル-2-オキソテトラヒドロフラン-3-イルエステル、(メタ)アクリル酸-5,5-ジメチル-2-オキソテトラヒドロフラン-3-イルエステル、(メタ)アクリル酸-2-オキソテトラヒドロフラン-3-イルエステル、(メタ)アクリル酸-5-オキソテトラヒドロフラン-2-イルメチルエステル、(メタ)アクリル酸-3,3-ジメチル-5-オキソテトラヒドロフラン-2-イルメチルエステル、(メタ)アクリル酸-4,4-ジメチル-5-オキソテトラヒドロフラン-2-イルメチルエステル等がある。これらの中でも、(メタ)アクリル酸-5-オキソ-4-オキサ-トリシクロ[4.2.1.03,7]ノナ-2-イルエステルが好ましい。
重合体(B)は、酸不安定基及び架橋基を有する重合体であり、重合体(A)で記載した繰り返し単位を含むものであることが好ましく、一般式(3-1)及び(3-2)で表される少なくともいずれかの繰り返し単位(以下、「繰り返し単位(3)」と記載する)を更に含むものであることが更に好ましい。第一のポジ型感放射線性組成物は、重合体(B)を含有することで、酸の作用によりアルカリ現像液に対して溶解することに加えて、第一のレジストパターンを、加熱又は暴露することにより、第二のポジ型感放射線性組成物に対して不溶化させることができる。
本発明のポジ型感放射線性組成物は、一般式(10)及び一般式(11)で表される少なくともいずれかの繰り返し単位を含む重合体(F)を更に含有するものであることが好ましい。重合体(F)は、その構造中にフッ素部位を有するため、ポジ型感放射線性組成物を構成する成分として添加されると、ポジ型感放射線性組成物によってレジスト被膜を形成した際に、被膜中の重合体(F)の撥油性的特長により、その分布がレジスト被膜表面で高くなる傾向がある。そのため、液浸露光時において、レジスト被膜中の酸発生剤や酸拡散制御剤等が、水等の液浸露光液に溶出してしまうことを抑制することができる。更に、この重合体(F)の撥水性的特長により、レジスト被膜と液浸露光用液体との後退接触角が高くなる。そのため、液浸露光用液体に由来する水滴が、レジスト被膜上に残り難く、高速でスキャン露光を行ってもウォーターマーク等の、液浸露光液に起因する欠陥の発生を抑制することができる。
各重合体に含まれる繰り返し単位(1)の割合は、各重合体に含まれる繰り返し単位の合計100mol%に対し、10~90mol%であることが好ましく、10~80mol%であることがより好ましく、20~70mol%であることが更に好ましい。繰り返し単位(1)の割合が10mol%未満であると、アルカリ現像部の解像性が劣化するおそれがある。一方、90mol%超であると、アルカリ現像部の現像性が劣化するおそれがある。
各重合体は、例えば、前述した各繰り返し単位を与える重合性不飽和単量体を、ヒドロパーオキシド類、ジアルキルパーオキシド類、ジアシルパーオキシド類、アゾ化合物等のラジカル重合開始剤を使用し、必要に応じて連鎖移動剤の存在下、適当な溶媒中で重合することにより調製することができる。
各重合体のゲルパーミエーションクロマトグラフィ(GPC)によるポリスチレン換算の重量平均分子量(以下、「Mw」と記載する)は特に限定されるものではないが、好ましくは1,000~100,000であり、より好ましくは1,000~30,000であり、更に好ましくは1,000~20,000である。Mwが1,000未満であると、第一のレジスト層の耐熱性が低下するおそれがある。一方、100,000超であると、アルカリ現像部の現像性が低下するおそれがある。
酸発生剤(C)とは、露光により酸を発生するものをいう。第一のポジ型感放射線性組成物が酸発生剤(C)を含有することで、露光により発生した酸の作用によって、重合体中に存在する酸解離性基、具体的には繰り返し単位(1)が有する酸解離性基を解離させ(保護基を脱離させ)、その結果、アルカリ現像部がアルカリ現像液に易溶性となり、ポジ型のレジストパターンを形成することができる。なお、酸発生剤(C)としては、一般式(9)で表される化合物(以下、「酸発生剤(1)」と記載する)を含むものが好ましい。なお、酸発生剤(C)は、酸発生剤(1)を1種単独で含んでも良く、2種以上を含んでも良い。
酸発生剤(1)は、一般式(9)で表される化合物である。
酸発生剤(2)としては、例えば、オニウム塩化合物、ハロゲン含有化合物、ジアゾケトン化合物、スルホン化合物、スルホン酸化合物等がある。なお、酸発生剤(C)は、酸発生剤(2)を1種単独で含んでも良く、2種以上を含んでも良い。
溶剤(D)としては、例えば、2-ブタノン、2-ペンタノン、3-メチル-2-ブタノン、2-ヘキサノン、4-メチル-2-ペンタノン、3-メチル-2-ペンタノン、3,3-ジメチル-2-ブタノン、2-ヘプタノン、2-オクタノン等の直鎖状又は分岐状のケトン類;シクロペンタノン、3-メチルシクロペンタノン、シクロヘキサノン、2-メチルシクロヘキサノン、2,6-ジメチルシクロヘキサノン、イソホロン等の環状のケトン類;プロピレングリコールモノメチルエーテルアセテート、プロピレングリコールモノエチルエーテルアセテート、プロピレングリコールモノ-n-プロピルエーテルアセテート、プロピレングリコールモノ-i-プロピルエーテルアセテート、プロピレングリコールモノ-n-ブチルエーテルアセテート、プロピレングリコールモノ-i-ブチルエーテルアセテート、プロピレングリコールモノ-sec-ブチルエーテルアセテート、プロピレングリコールモノ-t-ブチルエーテルアセテート等のプロピレングリコールモノアルキルエーテルアセテート類;2-ヒドロキシプロピオン酸メチル、2-ヒドロキシプロピオン酸エチル、2-ヒドロキシプロピオン酸n-プロピル、2-ヒドロキシプロピオン酸i-プロピル、2-ヒドロキシプロピオン酸n-ブチル、2-ヒドロキシプロピオン酸i-ブチル、2-ヒドロキシプロピオン酸sec-ブチル、2-ヒドロキシプロピオン酸t-ブチル等の2-ヒドロキシプロピオン酸アルキル類;3-メトキシプロピオン酸メチル、3-メトキシプロピオン酸エチル、3-エトキシプロピオン酸メチル、3-エトキシプロピオン酸エチル等の3-アルコキシプロピオン酸アルキル類の他、
第一のポジ型感放射線性組成物は、必要に応じて、酸拡散制御剤、脂環族添加剤、界面活性剤、増感剤等の各種の添加剤を含有しても良い。
酸拡散制御剤は、露光により酸発生剤(C)から生じる酸の第一のレジスト層中における拡散現象を制御し、非露光領域における好ましくない化学反応を抑制する作用を有する成分である。このような酸拡散制御剤を含有することにより、第一のポジ型感放射線性組成物の貯蔵安定性が向上する。また、レジストとしての解像度が更に向上するとともに、露光から露光後の加熱処理までの引き置き時間(PED)の変動によるレジストパターンの線幅変化を抑えることができ、プロセス安定性に極めて優れた組成物が得られる。
アミン化合物の好適例としては、n-ヘキシルアミン、n-ヘプチルアミン、n-オクチルアミン、n-ノニルアミン、n-デシルアミン、シクロヘキシルアミン等のモノ(シクロ)アルキルアミン類;ジ-n-ブチルアミン、ジ-n-ペンチルアミン、ジ-n-ヘキシルアミン、ジ-n-ヘプチルアミン、ジ-n-オクチルアミン、ジ-n-ノニルアミン、ジ-n-デシルアミン、シクロヘキシルメチルアミン、ジシクロヘキシルアミン等のジ(シクロ)アルキルアミン類;トリエチルアミン、トリ-n-プロピルアミン、トリ-n-ブチルアミン、トリ-n-ペンチルアミン、トリ-n-ヘキシルアミン、トリ-n-ヘプチルアミン、トリ-n-オクチルアミン、トリ-n-ノニルアミン、トリ-n-デシルアミン、シクロヘキシルジメチルアミン、メチルジシクロヘキシルアミン、トリシクロヘキシルアミン等のトリ(シクロ)アルキルアミン類;2,2’,2’’-ニトロトリエタノール等の置換アルキルアミン;アニリン、N-メチルアニリン、N,N-ジメチルアニリン、2-メチルアニリン、3-メチルアニリン、4-メチルアニリン、4-ニトロアニリン、ジフェニルアミン、トリフェニルアミン、ナフチルアミン、2,4,6-トリ-tert-ブチル-N-メチルアニリン、N-フェニルジエタノールアミン、2,6-ジイソプロピルアニリン等のアニリン又はその誘導体;
アミド基含有化合物の好適例としては、N-t-ブトキシカルボニルジ-n-オクチルアミン、N-t-ブトキシカルボニルジ-n-ノニルアミン、N-t-ブトキシカルボニルジ-n-デシルアミン、N-t-ブトキシカルボニルジシクロヘキシルアミン、N-t-ブトキシカルボニル-1-アダマンチルアミン、N-t-ブトキシカルボニル-2-アダマンチルアミン、N-t-ブトキシカルボニル-N-メチル-1-アダマンチルアミン、(S)-(-)-1-(t-ブトキシカルボニル)-2-ピロリジンメタノール、(R)-(+)-1-(t-ブトキシカルボニル)-2-ピロリジンメタノール、N-t-ブトキシカルボニル-4-ヒドロキシピペリジン、N-t-ブトキシカルボニルピロリジン、N-t-ブトキシカルボニルピペラジン、N-t-ブトキシカルボニルピペリジン、N,N-ジ-t-ブトキシカルボニル-1-アダマンチルアミン、N,N-ジ-t-ブトキシカルボニル-N-メチル-1-アダマンチルアミン、N-t-ブトキシカルボニル-4,4’-ジアミノジフェニルメタン、N,N’-ジ-t-ブトキシカルボニルヘキサメチレンジアミン、N,N,N’,N’-テトラ-t-ブトキシカルボニルヘキサメチレンジアミン、N,N’-ジ-t-ブトキシカルボニル-1,7-ジアミノヘプタン、N,N’-ジ-t-ブトキシカルボニル-1,8-ジアミノオクタン、N,N’-ジ-t-ブトキシカルボニル-1,9-ジアミノノナン、N,N’-ジ-t-ブトキシカルボニル-1,10-ジアミノデカン、N,N’-ジ-t-ブトキシカルボニル-1,12-ジアミノドデカン、N,N’-ジ-t-ブトキシカルボニル-4,4’-ジアミノジフェニルメタン、N-t-ブトキシカルボニルベンズイミダゾール、N-t-ブトキシカルボニル-2-メチルベンズイミダゾール、N-t-ブトキシカルボニル-2-フェニルベンズイミダゾール等のN-t-ブトキシカルボニル基含有アミノ化合物の他、ホルムアミド、N-メチルホルムアミド、N,N-ジメチルホルムアミド、アセトアミド、N-メチルアセトアミド、N,N-ジメチルアセトアミド、プロピオンアミド、ベンズアミド、ピロリドン、N-メチルピロリドン、N-アセチル-1-アダマンチルアミン、イソシアヌル酸トリス(2-ヒドロキシエチル)等がある。
ウレア化合物の好適例としては、尿素、メチルウレア、1,1-ジメチルウレア、1,3-ジメチルウレア、1,1,3,3-テトラメチルウレア、1,3-ジフェニルウレア、トリ-n-ブチルチオウレア等がある。
含窒素複素環化合物の好適例としては、イミダゾール、4-メチルイミダゾール、4-メチル-2-フェニルイミダゾール、ベンズイミダゾール、2-フェニルベンズイミダゾール、1-ベンジル-2-メチルイミダゾール、1-ベンジル-2-メチル-1H-イミダゾール等のイミダゾール類;ピリジン、2-メチルピリジン、4-メチルピリジン、2-エチルピリジン、4-エチルピリジン、2-フェニルピリジン、4-フェニルピリジン、2-メチル-4-フェニルピリジン、ニコチン、ニコチン酸、ニコチン酸アミド、キノリン、4-ヒドロキシキノリン、8-オキシキノリン、アクリジン、2,2’:6’,2’’-ターピリジン等のピリジン類;ピペラジン、1-(2-ヒドロキシエチル)ピペラジン等のピペラジン類の他、ピラジン、ピラゾール、ピリダジン、キノザリン、プリン、ピロリジン、ピペリジン、ピペリジンエタノール、3-ピペリジノ-1,2-プロパンジオール、モルホリン、4-メチルモルホリン、1-(4-モルホリニル)エタノール、4-アセチルモルホリン、3-(N-モルホリノ)-1,2-プロパンジオール、1,4-ジメチルピペラジン、1,4-ジアザビシクロ[2.2.2]オクタン等がある。
光崩壊性塩基の一例として、露光により分解して酸拡散制御性を失うオニウム塩化合物がある。このようなオニウム塩化合物の具体例としては、一般式(13)で表されるスルホニウム塩化合物や、一般式(14)で表されるヨードニウム塩化合物を挙げることができる。
脂環族添加剤は、ドライエッチング耐性、パターン形状、基板との接着性等を更に改善する作用を示す成分である。
界面活性剤は、塗布性、ストリエーション、現像性等を改良する作用を示す成分である。
増感剤は、放射線のエネルギーを吸収して、そのエネルギーを酸発生剤(C)に伝達し、それにより酸の生成量を増加させる作用を示すもので、第一のポジ型感放射線性組成物のみかけの感度を向上させる効果を有する。
第一のポジ型感放射線性組成物は、前述した添加剤以外の添加剤(以下、「他の添加剤」と記載する)を含有しても良い。他の添加剤としては、アルカリ可溶性樹脂、酸解離性の保護基を有する低分子のアルカリ溶解性制御剤、ハレーション防止剤、保存安定化剤、消泡剤等がある。また、染料或いは顔料を含有させることにより、露光部の潜像を可視化させて、露光時のハレーションの影響を緩和することができる。更に、接着助剤を含有させることにより、基板との接着性を改善することができる。
第二のレジスト層を形成する際に用いられる第二のポジ型感放射線性組成物は、酸の作用によりアルカリ可溶性となる重合体(a)(以下、「重合体(a)」と記載する)と、溶剤(b)と、を含有する組成物である。
重合体(a)は、酸の作用によりアルカリ可溶性となるアルカリ不溶性又はアルカリ難溶性の重合体である。重合体(a)は、酸の作用によりアルカリ可溶性となるものであれば特に限定されないが、一般式(16)で表される繰り返し単位(以下、「繰り返し単位(16)」と記載する)と、繰り返し単位(1)と、を含むものが好ましい。
繰り返し単位(16)を与える単量体の好適例としては、(メタ)アクリル酸(1,1,1-トリフルオロ-2-トリフルオロメチル-2-ヒドロキシ-3-プロピル)エステル、(メタ)アクリル酸(1,1,1-トリフルオロ-2-トリフルオロメチル-2-ヒドロキシ-4-ブチル)エステル、(メタ)アクリル酸(1,1,1-トリフルオロ-2-トリフルオロメチル-2-ヒドロキシ-5-ペンチル)エステル、(メタ)アクリル酸(1,1,1-トリフルオロ-2-トリフルオロメチル-2-ヒドロキシ-4-ペンチル)エステル、(メタ)アクリル酸2-((5-(1’,1’,1’-トリフルオロ-2’-トリフルオロメチル-2’-ヒドロキシ)プロピル)ビシクロ[2.2.1]ヘプチル)エステル、(メタ)アクリル酸3-((8-(1’,1’,1’-トリフルオロ-2’-トリフルオロメチル-2’-ヒドロキシ)プロピル)テトラシクロ[6.2.1.13,6.02,7]ドデシル)エステル等がある。
繰り返し単位(1)は、第一のポジ型感放射線性組成物に記載した重合体(A)に含まれる繰り返し単位(1)と同様のことがいえる。
樹脂(a)は、繰り返し単位(16)及び繰り返し単位(1)以外にも、他の繰り返し単位を含むものであっても良い。
重合体(a)に含まれる繰り返し単位(16)の割合は、重合体(a)に含まれる繰り返し単位の合計100mol%に対して、30~90mol%であることが好ましく、30~80mol%であることがより好ましく、40~80mol%であることが更に好ましい。繰り返し単位(16)の割合が30mol%未満であると、重合体(a)の溶剤(b)への溶解性が低下するおそれがある。一方、90mol%超であると、アルカリ現像部の解像性が劣化するおそれがある。
重合体(a)は、例えば、各繰り返し単位を与える重合性不飽和単量体を用いて、前述の重合体(A)又は重合体(B)と同様にして調製することができる。
樹脂(a)のMwは特に制限されないが、1,000~100,000であることが好ましく、1,000~30,000であることがより好ましく、1,000~20,000であることが更に好ましい。重合体(a)のMwが1,000未満であると、第二のレジスト層を形成した場合に、その耐熱性が低下するおそれがある。一方、100,000超であると、アルカリ現像部の現像性が低下するおそれがある。また、重合体(a)のMwとMnとの比(Mw/Mn)は、通常、1~5であり、好ましくは1~3である。
溶剤(b)としては、特に制限されないが、重合体(a)を溶解し、第一のレジストパターンを溶解しないものが好ましい。例えば、プロピレングリコールモノメチルエーテルアセテートやシクロヘキサノン等がある。
第二のポジ型感放射線性組成物は、通常、感放射線性酸発生剤を含有するものである。感放射線性酸発生剤としては、前述の第一のポジ型感放射線性組成物における酸発生剤(C)と同様のことがいえる。なお、第一のポジ型感放射線性組成物に含有される酸発生剤(C)と、第二のポジ型感放射線性組成物に含有される感放射線性酸発生剤は、同一であっても良く、異なっていても良い。
第二のポジ型感放射線性組成物は、添加剤を含有しても良い。なお、この添加剤としては、第一のポジ型感放射線性組成物において前述した酸拡散制御剤等の各種の添加剤と同様のことがいえる。
A:[Δ〔(PEB前接触角)-(PEB後接触角)]の値が10°以上
B:[Δ〔(PEB前接触角)-(PEB後接触角)]の値が5°以上10°未満
C:[Δ〔(PEB前接触角)-(PEB後接触角)]の値が5°未満
A:[Δ〔(前進接触角)-(後退接触角〕]の絶対値が20°未満
B:[Δ〔(前進接触角)-(後退接触角〕]の絶対値が20°以上
<1>ウェハステージ位置を調整する。
<2>ウェハをステージにセットする。
<3>針へ水を注入する。
<4>針の位置を微調整する。
<5>針から水を排出してウェハ上に25μLの水滴を形成する。
<6>水滴から針を一旦引き抜く。
<7>針を前記<4>で調整した位置へ再度引き下げる。
<8>針から水滴を10μL/minの速度で90秒間注入する。同時に接触角を毎秒(計90回)測定する。
<9>接触角が安定した時点から計20点の接触角について平均値を算出し前進接触角とする。
先ず、単量体(M-14)15mol%、単量体(M-13)35mol%、単量体(M-8)50mol%、及び重合開始剤(ジメチル-2,2’-アゾビスイソブチレート(MAIB))を100gのメチルエチルケトンに溶解した単量体溶液を準備した。仕込み時の単量体の合計量は50gに調製した。なお、各単量体のmol%は単量体全量に対するmol%を表し、重合開始剤の使用割合は、単量体と重合開始剤の合計量に対して、2mol%とした。一方、温度計及び滴下漏斗を備えた500mLの三つ口フラスコにエチルメチルケトン50gを加え、30分間窒素パージを行った。その後、フラスコ内をマグネティックスターラーで攪拌しながら、80℃になるように加熱した。次いで、単量体溶液をフラスコ内に、滴下漏斗を用いて3時間かけて滴下した。滴下終了後、3時間熟成させた後、30℃以下になるまで冷却して重合体溶液を得た。得られた重合体溶液を1000gのメタノールに投入して混合した。次いで、吸引濾過を実施し、粉体を回収し、200gのメタノールに再度投入し、洗浄し、濾過した。洗浄を再度行い、回収した粉体を60℃にて減圧乾燥させた。得られた重合体を重合体(A-1)とする。この重合体(A-1)は、Mwが10000であり、Mw/Mnが1.5であり、13C-NMR分析の結果、各単量体に由来する各繰り返し単位の含有比率((M-14)/(M-13)/(M-8)=14.6/35.9/49.5(mol%))の共重合体であった。
先ず、単量体(M-2)50mol%、単量体(M-19)5mol%、単量体(M-8)45mol%、及び重合開始剤(ジメチル-2,2’-アゾビスイソブチレート(MAIB))を100gのメチルエチルケトンに溶解した単量体溶液を準備した。仕込み時の単量体の合計量は50gに調製した。なお、各単量体のmol%は単量体全量に対するmol%を表し、重合開始剤の使用割合は、単量体と重合開始剤の合計量に対して、8mol%とした。一方、温度計及び滴下漏斗を備えた500mLの三つ口フラスコにエチルメチルケトン50gを加え、30分間窒素パージを行った。その後、フラスコ内をマグネティックスターラーで攪拌しながら、80℃になるように加熱した。次いで、単量体溶液をフラスコ内に、滴下漏斗を用いて3時間かけて滴下した。滴下終了後、3時間熟成させた後、30℃以下になるまで冷却して重合体溶液を得た。得られた重合体溶液を1000gのメタノールに投入して混合した。次いで、吸引濾過を実施し、粉体を回収し、200gのメタノールに再度投入し、洗浄し、濾過した。洗浄を再度行い、回収した粉体を60℃にて減圧乾燥させた。得られた重合体を重合体(B-1)とする。この重合体(B-1)は、Mwが5000であり、Mw/Mnが1.6であり、13C-NMR分析の結果、各単量体に由来する各繰り返し単位の含有比率[(M-2)/(M-19)/(M-8)=49.5/5.0/45.5(mol%)]の共重合体であった。
先ず、単量体(M-3)25mol%、単量体(M-1)60mol%、単量体(M-4)15mol%、及び重合開始剤(ジメチル-2,2’-アゾビスイソブチレート(MAIB))を50gのメチルエチルケトンに溶解した単量体溶液を準備した。仕込み時の単量体の合計量は50gに調製した。なお、各単量体のmol%は単量体全量に対するmol%を表し、重合開始剤の使用割合は、単量体と重合開始剤の合計量に対して、8mol%とした。一方、温度計及び滴下漏斗を備えた500mLの三つ口フラスコにエチルメチルケトン50gを加え、30分間窒素パージを行った。その後、フラスコ内をマグネティックスターラーで攪拌しながら、80℃になるように加熱した。次いで、単量体溶液をフラスコ内に、滴下漏斗を用いて3時間かけて滴下した。滴下終了後、3時間熟成させた後、30℃以下になるまで冷却して重合体溶液を得た。その後、重合体溶液を2Lの分液漏斗に移液した後、150gのn-ヘキサンでその重合溶液を均一に希釈し、600gのメタノールを投入して混合した。次いで、30gの蒸留水を投入した後、攪拌して30分静置した。その後、下層を回収し、プロピレングリコールモノメチルエーテルアセテート溶液とした。このプロピレングリコールモノメチルエーテルアセテート溶液中の重合体を重合体(F-1)とする。重合体(F-1)は、Mwが6500であり、Mw/Mnが1.7であり、13C-NMR分析の結果、各単量体に由来する各繰り返し単位の含有比率[(M-3):(M-1):(M-4)]は、26.6:58.2:15.2(mol%)の共重合体であった。
表1に示す配合処方で単量体を用いたこと以外は、重合例1と同様にして重合体(A-2)~(A-7)を調製した。なお、表2に、重合体(A-1)~(A-7)の13C-NMRによる組成比、重量平均分子量(Mw)及び分散度(Mw/Mn)を併記した。
表1に示す配合処方で単量体を用いたこと以外は、重合例8と同様にして重合体(B-2)~(B-8)を調製した。なお、表2に、重合体(B-2)~(B-8)の13C-NMRによる組成比、重量平均分子量(Mw)及び分散度(Mw/Mn)を併記した。
表1に示す配合処方で単量体を用いたこと以外は、重合例16と同様にして重合体(F-2)~(F-14)を調製した。なお、表2に、重合体(F-1)~(F-14)の13C-NMRによる組成比、重量平均分子量(Mw)及び分散度(Mw/Mn)を併記した。
重合体(A)として重合体(A-1)90部、重合体(B)として重合体(B-1)10部、酸発生剤(C)として酸発生剤(C-1)(トリフェニルスルホニウムノナフルオロ-n-ブタンスルホネート)7.5部、含窒素化合物(E)として酸拡散抑制剤(E-1)(N-t-ブトキシカルボニルピロリジン)0.94部、並びに溶剤(D)として溶剤(D-1)(プロピレングリコールモノメチルエーテルアセテート)1287部及び溶剤(D-2)(シクロヘキサノン)551部を添加し、各成分を混合して均一溶液とした。その後、孔径200nmのメンブランフィルターを用いてろ過することにより、第一のポジ型感放射線性組成物からなる塗工液(1)を調製した。
表3に記載した配合処方にしたこと以外は、実施例1と同様にして各塗工液を調製した。なお、各成分の使用量は、重合体(A)と重合体(B)の合計量100部に対する値である。
溶剤(D-2):シクロヘキサノン
樹脂(a)として下記式(B-9)で表される重合体(B-9)100部、感放射線性酸発生剤としてトリフェニルスルホニウムノナフルオロ-n-ブタンスルホネート7.0部、酸拡散抑制剤(E)として化合物(E-2)2.64部、及び溶剤(b)としてプロピレングリコールモノメチルエーテルアセテート2014部を添加し、各成分を混合して均一溶液とした。その後、孔径200nmのメンブランフィルターを用いてろ過することにより、第二のポジ型感放射線性組成物からなる塗工液(24)を調製した。なお、重合体(B-9)は前述した重合例8と同様にして調製した。この重合体(B-9)は、Mwが4800であり、Mw/Mnが1.5の共重合体であった。
12インチシリコンウェハ上に、下層反射防止膜(商品名「ARC29A」、ブルワーサイエンス社製)を、商品名「Lithius Pro-i」(東京エレクトロン社製)を使用してスピンコートした後、PB(205℃、60秒)を行うことにより膜厚77nmの塗膜を形成した。商品名「CLEAN TRACK ACT12」を使用して実施例1で調製した塗工液(1)(第一のポジ型感放射線性組成物)をスピンコートし、PB(130℃、60秒)した後、冷却(23℃、30秒)することにより膜厚90nmの第一のレジスト層を形成した。
表4に記載したこと以外は実施例19と同様にして各評価用基板Cを得た。得られた各評価用基板Cの評価結果を併せて表4に記載する。なお、実施例30~32及び40については、48nmライン/96nmピッチ(48nm1L/1S)のマスクサイズのマスクを介して露光した第一のレジストパターンに対して交差するように、48nmライン/96nmピッチ(48nm1L/1S)のマスクサイズのマスクを介して露光した。
表5に記載したこと以外は実施例19と同様にして各評価用基板Cを得た。得られた各評価用基板Cの評価結果を併せて表5に記載する。
Claims (9)
- 第一のポジ型感放射線性組成物を用いて、基板上に第一のレジストパターンを形成する工程(1)と、
前記第一のレジストパターンを、光又は熱に対して不活性化させることにより第二のポジ型感放射線性組成物に対して不溶化させる工程(2)と、
前記第二のポジ型感放射線性組成物を用いて、前記第一のレジストパターンが形成された基板上に第二のレジストパターンを形成する工程(3)と、を含むレジストパターン形成方法の前記工程(1)で用いられる、
(B)酸不安定基及び架橋基を有する重合体と、(C)感放射線性酸発生剤と、(D)溶剤と、を含有するポジ型感放射線性組成物。 - (A)酸不安定基を有し、架橋基を有しない重合体を更に含有する請求項1に記載のポジ型感放射線性組成物。
- 前記重合体(A)及び前記重合体(B)が、
下記一般式(1)で表される酸不安定基を有する繰り返し単位と、
下記一般式(2-1)~(2-5)及び下記式(2-6)からなる群より選択される少なくとも一つのラクトン構造を有する繰り返し単位、又は下記一般式(2-7)で表される繰り返し単位と、を含む請求項2に記載のポジ型感放射線性組成物。
- 前記重合体(B)が、
下記一般式(3-1)及び(3-2)の少なくともいずれかで表される繰り返し単位を含む請求項1~3のいずれか一項に記載のポジ型感放射線性組成物。
- 前記重合体(B)に含まれる、前記一般式(3-1)又は(3-2)で表される繰り返し単位の割合が、前記重合体(B)に含まれる繰り返し単位の合計100mol%に対して、1~30mol%である請求項4に記載のポジ型感放射線性組成物。
- (F)下記一般式(10)及び下記一般式(11)で表される少なくともいずれかの繰り返し単位を含む重合体を更に含有する請求項1~5のいずれか一項に記載のポジ型感放射線性組成物。
- 前記重合体(F)の含有量が、前記重合体(A)及び(B)の合計100質量部に対して、0.1~20質量部である請求項6に記載のポジ型感放射線性組成物。
- 請求項1~7のいずれか一項に記載のポジ型感放射線性組成物を用いて、基板上に第一のレジストパターンを形成する工程(1)と、
前記第一のレジストパターンを、光又は熱に対して不活性化させることにより第二のポジ型感放射線性組成物に対して不溶化させる工程(2)と、
前記第二のポジ型感放射線性組成物を用いて、前記第一のレジストパターンが形成された基板上に第二のレジストパターンを形成する工程(3)と、を含むレジストパターン形成方法。 - 前記第一のレジストパターンが、ライン部分及びスペース部分を有し、
前記第二のレジストパターンが、ライン部分及びスペース部分を有し、
前記第一のレジストパターンの前記ライン部分と、前記第二のレジストパターンの前記ライン部分とが相互に交差するように、前記第二のレジストパターンを形成する請求項8に記載のレジストパターン形成方法。
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CN (1) | CN102099749A (ja) |
TW (1) | TW201005440A (ja) |
WO (1) | WO2010007993A1 (ja) |
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EP2309332A1 (en) | 2011-04-13 |
JP5445454B2 (ja) | 2014-03-19 |
US20110104612A1 (en) | 2011-05-05 |
CN102099749A (zh) | 2011-06-15 |
TW201005440A (en) | 2010-02-01 |
US8501385B2 (en) | 2013-08-06 |
KR20110022602A (ko) | 2011-03-07 |
EP2309332A4 (en) | 2012-01-25 |
JPWO2010007993A1 (ja) | 2012-01-05 |
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