US6284631B1 - Method and device for controlled cleaving process - Google Patents
Method and device for controlled cleaving process Download PDFInfo
- Publication number
- US6284631B1 US6284631B1 US09/480,979 US48097900A US6284631B1 US 6284631 B1 US6284631 B1 US 6284631B1 US 48097900 A US48097900 A US 48097900A US 6284631 B1 US6284631 B1 US 6284631B1
- Authority
- US
- United States
- Prior art keywords
- substrate
- cleave
- region
- particles
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0191—Transfer of a layer from a carrier wafer to a device wafer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0191—Transfer of a layer from a carrier wafer to a device wafer
- B81C2201/0192—Transfer of a layer from a carrier wafer to a device wafer by cleaving the carrier wafer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
Abstract
Description
Claims (17)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/480,979 US6284631B1 (en) | 1997-05-12 | 2000-01-10 | Method and device for controlled cleaving process |
US09/790,026 US6486041B2 (en) | 1997-05-12 | 2001-02-20 | Method and device for controlled cleaving process |
US10/268,918 US6790747B2 (en) | 1997-05-12 | 2002-10-09 | Method and device for controlled cleaving process |
US10/913,701 US7348258B2 (en) | 1997-05-12 | 2004-08-06 | Method and device for controlled cleaving process |
US11/842,104 US7470600B2 (en) | 1998-02-19 | 2007-08-20 | Method and device for controlled cleaving process |
US12/316,172 US20090093103A1 (en) | 1997-05-12 | 2008-12-09 | Method and device for controlled cleaving process |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US4627697P | 1997-05-12 | 1997-05-12 | |
US09/026,027 US5994207A (en) | 1997-05-12 | 1998-02-19 | Controlled cleavage process using pressurized fluid |
US09/313,959 US6291313B1 (en) | 1997-05-12 | 1999-05-18 | Method and device for controlled cleaving process |
US09/370,975 US6033974A (en) | 1997-05-12 | 1999-08-10 | Method for controlled cleaving process |
US09/480,979 US6284631B1 (en) | 1997-05-12 | 2000-01-10 | Method and device for controlled cleaving process |
Related Parent Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/370,975 Continuation-In-Part US6033974A (en) | 1997-05-12 | 1999-08-10 | Method for controlled cleaving process |
US09/370,975 Continuation US6033974A (en) | 1997-05-12 | 1999-08-10 | Method for controlled cleaving process |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/790,026 Continuation US6486041B2 (en) | 1997-05-12 | 2001-02-20 | Method and device for controlled cleaving process |
Publications (1)
Publication Number | Publication Date |
---|---|
US6284631B1 true US6284631B1 (en) | 2001-09-04 |
Family
ID=27362679
Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/370,975 Expired - Lifetime US6033974A (en) | 1997-05-12 | 1999-08-10 | Method for controlled cleaving process |
US09/480,979 Expired - Lifetime US6284631B1 (en) | 1997-05-12 | 2000-01-10 | Method and device for controlled cleaving process |
US09/790,026 Expired - Lifetime US6486041B2 (en) | 1997-05-12 | 2001-02-20 | Method and device for controlled cleaving process |
US10/268,918 Expired - Lifetime US6790747B2 (en) | 1997-05-12 | 2002-10-09 | Method and device for controlled cleaving process |
US10/913,701 Expired - Fee Related US7348258B2 (en) | 1997-05-12 | 2004-08-06 | Method and device for controlled cleaving process |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/370,975 Expired - Lifetime US6033974A (en) | 1997-05-12 | 1999-08-10 | Method for controlled cleaving process |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/790,026 Expired - Lifetime US6486041B2 (en) | 1997-05-12 | 2001-02-20 | Method and device for controlled cleaving process |
US10/268,918 Expired - Lifetime US6790747B2 (en) | 1997-05-12 | 2002-10-09 | Method and device for controlled cleaving process |
US10/913,701 Expired - Fee Related US7348258B2 (en) | 1997-05-12 | 2004-08-06 | Method and device for controlled cleaving process |
Country Status (1)
Country | Link |
---|---|
US (5) | US6033974A (en) |
Cited By (36)
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---|---|---|---|---|
US6486041B2 (en) * | 1997-05-12 | 2002-11-26 | Silicon Genesis Corporation | Method and device for controlled cleaving process |
US6576149B1 (en) * | 1999-07-08 | 2003-06-10 | Nec Lcd Technologies, Ltd. | Method and device for parting laminated substrate for liquid crystal cell |
FR2834380A1 (en) * | 2002-01-03 | 2003-07-04 | Soitec Silicon On Insulator | DEVICE FOR CUTTING A LAYER OF A SUBSTRATE, AND ASSOCIATED METHOD |
US6627552B1 (en) * | 2000-03-29 | 2003-09-30 | Kabsuhiki Kaisha Toshiba | Method for preparing epitaxial-substrate and method for manufacturing semiconductor device employing the same |
US20040001368A1 (en) * | 2002-05-16 | 2004-01-01 | Nova Research, Inc. | Methods of fabricating magnetoresistive memory devices |
US6699770B2 (en) * | 2001-03-01 | 2004-03-02 | John Tarje Torvik | Method of making a hybride substrate having a thin silicon carbide membrane layer |
US20040137762A1 (en) * | 2002-11-27 | 2004-07-15 | Walter Schwarzenbach | Annealing process and device of semiconductor wafer |
US20050118754A1 (en) * | 2003-11-18 | 2005-06-02 | Silicon Genesis Corporation | Method for fabricating semiconductor devices using strained silicon bearing material |
US20050227425A1 (en) * | 2003-11-18 | 2005-10-13 | Silicon Genesis Corporation | Method for fabricating semiconductor devices using strained silicon bearing material |
US20060234486A1 (en) * | 2005-04-13 | 2006-10-19 | Speck James S | Wafer separation technique for the fabrication of free-standing (Al,In,Ga)N wafers |
US20060264004A1 (en) * | 2005-05-23 | 2006-11-23 | Ziptronix, Inc. | Method of detachable direct bonding at low temperatures |
US20080057675A1 (en) * | 1998-02-19 | 2008-03-06 | Silicon Genesis Corporation | Method and Device for Controlled Cleaving Process |
US20080128641A1 (en) * | 2006-11-08 | 2008-06-05 | Silicon Genesis Corporation | Apparatus and method for introducing particles using a radio frequency quadrupole linear accelerator for semiconductor materials |
US20080188011A1 (en) * | 2007-01-26 | 2008-08-07 | Silicon Genesis Corporation | Apparatus and method of temperature conrol during cleaving processes of thick film materials |
US20080206962A1 (en) * | 2006-11-06 | 2008-08-28 | Silicon Genesis Corporation | Method and structure for thick layer transfer using a linear accelerator |
US20090042356A1 (en) * | 2001-08-22 | 2009-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Peeling Method and Method of Manufacturing Semiconductor Device |
US20090056513A1 (en) * | 2006-01-24 | 2009-03-05 | Baer Stephen C | Cleaving Wafers from Silicon Crystals |
WO2009036203A1 (en) * | 2007-09-11 | 2009-03-19 | Silicon China (Hk) Limited | Method and structure for hydrogenation of silicon substrates with shaped covers |
US20090232981A1 (en) * | 2008-03-11 | 2009-09-17 | Varian Semiconductor Equipment Associates, Inc. | Cooled cleaving implant |
US20090324379A1 (en) * | 2008-05-30 | 2009-12-31 | Alta Devices, Inc. | Methods and apparatus for a chemical vapor deposition reactor |
US20100001374A1 (en) * | 2008-05-30 | 2010-01-07 | Alta Devices, Inc. | Epitaxial lift off stack having a multi-layered handle and methods thereof |
US20100116784A1 (en) * | 2008-10-10 | 2010-05-13 | Alta Devices, Inc. | Mesa etch method and composition for epitaxial lift off |
US20100120233A1 (en) * | 2008-10-10 | 2010-05-13 | Alta Devices, Inc. | Continuous Feed Chemical Vapor Deposition |
US20100151689A1 (en) * | 2008-12-17 | 2010-06-17 | Alta Devices, Inc. | Tape-based epitaxial lift off apparatuses and methods |
US20100147370A1 (en) * | 2008-12-08 | 2010-06-17 | Alta Devices, Inc. | Multiple stack deposition for epitaxial lift off |
US7776717B2 (en) | 1997-05-12 | 2010-08-17 | Silicon Genesis Corporation | Controlled process and resulting device |
US20110083601A1 (en) * | 2009-10-14 | 2011-04-14 | Alta Devices, Inc. | High growth rate deposition for group iii/v materials |
US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
US20120058621A1 (en) * | 2000-11-27 | 2012-03-08 | Fabrice Letertre | Fabrication of substrates with a useful layer of monocrystalline semiconductor material |
US8148237B2 (en) | 2009-08-07 | 2012-04-03 | Varian Semiconductor Equipment Associates, Inc. | Pressurized treatment of substrates to enhance cleaving process |
US8329557B2 (en) | 2009-05-13 | 2012-12-11 | Silicon Genesis Corporation | Techniques for forming thin films by implantation with reduced channeling |
US8362592B2 (en) | 2009-02-27 | 2013-01-29 | Alta Devices Inc. | Tiled substrates for deposition and epitaxial lift off processes |
WO2013121260A1 (en) | 2012-02-16 | 2013-08-22 | Soitec | Method for transferring a layer |
US9859458B2 (en) | 2015-06-19 | 2018-01-02 | QMAT, Inc. | Bond and release layer transfer process |
US11377758B2 (en) | 2020-11-23 | 2022-07-05 | Stephen C. Baer | Cleaving thin wafers from crystals |
US11393683B2 (en) | 2009-10-14 | 2022-07-19 | Utica Leaseco, Llc | Methods for high growth rate deposition for forming different cells on a wafer |
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US6013563A (en) | 1997-05-12 | 2000-01-11 | Silicon Genesis Corporation | Controlled cleaning process |
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US20040229443A1 (en) * | 1998-12-31 | 2004-11-18 | Bower Robert W. | Structures, materials and methods for fabrication of nanostructures by transposed split of ion cut materials |
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US6263941B1 (en) | 1999-08-10 | 2001-07-24 | Silicon Genesis Corporation | Nozzle for cleaving substrates |
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US6033974A (en) | 2000-03-07 |
US20050070071A1 (en) | 2005-03-31 |
US6486041B2 (en) | 2002-11-26 |
US6790747B2 (en) | 2004-09-14 |
US7348258B2 (en) | 2008-03-25 |
US20010026997A1 (en) | 2001-10-04 |
US20030113983A1 (en) | 2003-06-19 |
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