NL1037191C2

NL1037191C2 - SEMICONDUCTOR TUNNEL INSTALLATION, INCLUDING MULTIPLE DEVICES FOR THE PURPOSE OF PROCESSING A (SUB) NANOMETER HIGH LAYER OF PARTICLES OF A FIXED SUBSTANCE ON THE FOLLOWING, UNINTERRUPTED, SEVERAL SACRED.

Info

Publication number: NL1037191C2
Application number: NL1037191A
Authority: NL
Inventors: Edward Bok
Original assignee: Edward Bok
Priority date: 2009-08-11
Filing date: 2009-08-11
Publication date: 2011-11-23
Also published as: NL1037191A

Description

Semiconductor tunnel-opstelling, bevattende meerdere inrichtingen ten behoeve van het daarmede bewerkstelligen van een (sub) nanometer hoge laag van deeltjes van een vaste substantie op de opvolgende, ononderbroken erdoorheen 5 verplaatsende semiconductor substraat-gedeeltes.Semiconductor tunnel arrangement, comprising a plurality of devices for thereby effecting a (sub) nanometer-high layer of particles of a solid substance on the successive, continuously moving semiconductor substrate portions therethrough.

De semiconductor substraat transfer/behandelings-tunnelopstelling volgens de uitvinding bevat mede typisch een aantal stripvormige medium-toevoer inrichtingen, welke in 10 hoofd zaak zijn opgenomen in het boventunnel blok ervan ten behoeve van het tijdens de werking ervan daarin ononderbroken toevoeren van de combinatie van vloeibaar draagmedium en deeltjes van een vaste semiconductor substantie, waarbij daarin tevens typisch de opname van een tweetal opvolgende meng-15 inrichtingen ten behoeve van in de eerste meng-inrichting ervan het mengen van een hoog percentage van een vloeibaar draagmedium met tenminste mede zulk een substantie en in de tweede daarop-volgende , typisch eronder-gelegen meng-inrichting, het mengen van deze combinatie met wederom een 20 hoog percentage vloeibaar draagmedium plaats vindt.The semiconductor substrate transfer / treatment tunnel arrangement according to the invention also typically comprises a number of strip-shaped medium supply devices, which are substantially incorporated in its upper tunnel block for the purpose of continuously supplying the combination of liquid during its operation therein carrier medium and particles of a solid semiconductor substance, wherein there is also typically included therein two successive mixing devices for the purpose of mixing in the first mixing device a high percentage of a liquid carrier medium with at least partly such a substance and in the second subsequent, typically underlying mixing device, the mixing of this combination with again a high percentage of liquid carrier medium takes place.

In de gelijktijdig door de aanvrager ingediende Nederlandse Octrooi-aanvrage voor zulk een semiconductor tunnel-opstelling is reeds zulk een stripvormige medium-toevoer-inrichting aangegeven ten behoeve van de ononderbroken 25 toevoer erdoorheen van de combinatie van typisch laag- kokend vloeibaar draagmedium en deeltjes van een semiconductor substantie in een vloeibare of vaste vorm ervan.In the Dutch Patent Application for such a semiconductor tunnel arrangement simultaneously submitted by the applicant, such a strip-shaped medium supply device has already been indicated for the continuous supply therethrough of the combination of typical low-boiling liquid carrier medium and particles of a semiconductor substance in a liquid or solid form thereof.

Bij een breedte van de tunnel-door gang van circa 200 mm en een verplaatsings-snelheid van de opvolgende, zich erdoorheen 30 verplaatsende semiconductor substraat-gedeeltes van typisch slechts 2 mm per seconde en zulks in combinatie met typisch een minder dan 500 nanometer, hoge op te bouwen laag van zulk een vloeibare hecht-substantie is aldus het ononderbroken toegevoerde volume ervan beperkt tot typisch minder dan 35 0,2 mm3 per seconde.With a width of the tunnel passage of about 200 mm and a speed of movement of the subsequent semiconductor substrate portions moving through it, typically only 2 mm per second and this in combination with typically less than 500 nanometers, high the layer of such a liquid adhesive substance to be built up is thus its continuously supplied volume is typically limited to less than 0.2 mm 3 per second.

Hierdoor is een zeer hoog percentage van dit vloeibare draagmedium gewenst, met typisch een meng-verhouding van circa 2500 : 1 en waarbij dan een ononderbroken toevoer 1037191 2 erdoorheen van circa 500 mm3 per seconde van zulk een combinatie plaats vindt.As a result, a very high percentage of this liquid carrier medium is desired, with a typical mixing ratio of approximately 2500: 1, and in which case a continuous supply therethrough of approximately 500 mm 3 per second of such a combination takes place.

Aldus vindt nu met behulp van deze tweetal aanvullende meng-inrichtingen in zulk een stripvormige medium-5 toevoerinrichting een voldoende verdunning van deze vloeibare hecht-substantie plaats.Thus, with the aid of these two additional mixing devices, a sufficient dilution of this liquid adhesive substance takes place in such a strip-shaped medium feed device.

Daarbij onder de daarop-volgende, in het boventunnelblok opgenomen stripvormige tril/verdampings-inrichting door verdamping van het laag-kokende vloeibare draagmedium de 10 vorming van de combinatie van dampvormig medium en deeltjes van deze vaste substantie onder de neerslag ervan op de boven-topography van de opvolgende eronderlangs verplaatsende semiconductor substraat-gedeeltes en zulks mede onder tril-conditie van deze tril/verdampings-inrichting.The formation of the combination of vaporous medium and particles of this solid substance below its subsequent deposition on the upper topography under the subsequent strip-shaped vibrating / evaporating device included in the upper tunnel block by evaporation of the low-boiling liquid carrier medium. of the successive semiconductor substrate portions moving alongside it, and this also under the vibrating condition of this vibrating / evaporating device.

15 Aldus een optimaal semiconductor neerslag-proces met behulp van deze combinatie van deeltjes van deze vaste substantie en zulk een zeer hoog percentage van het verdampbare vloeibare draagmedium.Thus an optimum semiconductor precipitation process with the aid of this combination of particles of this solid substance and such a very high percentage of the evaporable liquid carrier medium.

Daar bij vindt tevens een uiterst snelle verdamping van dit 20 laag-kokende vloeibare draagmedium in de onder deze tril/ verdampings -inrichting gelegen bovenspleet-sectie plaats, met daardoor slechts een geringe benodigde breedte van zulk een inrichting in de lengte-richting van deze tunnel, typisch minder dan 50 mm, en waar bij een ononderbroken afvoer van 25 deze gevormde damp in de daarop-volgende stripvormige af voer-inrichting in het boventunnelblok.In addition, an extremely rapid evaporation of this low-boiling liquid carrier medium also takes place in the upper slit section located below this vibration / evaporation device, with as a result only a small required width of such a device in the longitudinal direction of this tunnel. , typically less than 50 mm, and where there is uninterrupted discharge of this vapor formed in the subsequent strip-shaped discharge device in the upper tunnel block.

Als een uiterst gunstige tri1/verwarmings-inrichting daar bij typisch de toepassing van een stripvormige transducer-opstelling, welke is opgenomen in het boventunnelblok 30 onmiddellijk achter deze medium-toevoerinrichting.As an extremely favorable tri1 / heating device there is typically the use of a strip-shaped transducer arrangement which is included in the upper tunnel block 30 immediately behind this medium supply device.

Daarbij in een gunstige tril-conditie ervan het tevens onderhouden van de combinatie van een snelle neerwaartse -en een daarop-volgende langzame opwaartse verplaatsing van deze trillingen ten behoeve van het bijdragen in zulk een 35 optimaal neerslag-proces.Thereby, in a favorable vibration condition thereof, also maintaining the combination of a rapid downward and a subsequent slow upward displacement of these vibrations for the purpose of contributing to such an optimum precipitation process.

In een volgende gunstige werkwijze het in deze medium-toevoer inrichting tevens toepassen van een hoog-kokend vloeibaar draagmedium, waarbij dan typisch in dit 3 boventunnelblok de opname van een tweede stripvormige tril/ verdampings-inrichting achter deze eerste combinatie van een tril/verdampings-inrichting en medium-afvoer inrichting en waarin dan het ononderbroken plaatsvinden van verdamping van 5 dit hoger-kokende vloeibare draagmedium.In a further favorable method, also using a high-boiling liquid carrier medium in this medium-supply device, wherein in this top-down block block typically the accommodation of a second strip-shaped vibration / evaporation device is behind this first combination of a vibration / evaporation device. device and medium discharge device and in which then the continuous occurrence of evaporation of this higher-boiling liquid carrier medium takes place.

Tevens vindt mogelijk typisch mede een zeer beperkte ongunstige neerslag van zulke deeltjes van deze $a.ste substantie tegen tenminste het onderwand-gedeelte van deze inrichting plaats, waardoor dan tevens -mogelijk een 10 neerslag op deze onderwand zich uitstrekt tot deze daaropvolgende stripvormige afvoer-inrichting, welke eveneens is opgenomen in het boventunnelblok.It is also possible that a very limited, unfavorable precipitation of such particles of this first substance against at least the lower wall part of this device may take place, as a result of which a precipitation on this lower wall possibly also extends to this subsequent strip-shaped discharge. device, which is also included in the upper tunnel block.

In een gunstige uitvoering van deze tunnel-opstelling vindt daarbij daartoe in een daarop-volgende stripvormige toevoer-15 inrichting de ononderbroken toevoer van vloeibaar reinigings-medium naar deze afvoer-inrichting plaats ten behoeve van het daarin mede afvoeren van deze deeltjes vaste substantie op waarbij typisch daarachter de opname van een stripvormige inrichting voor typisch gasvormig slot-medium, waardoor 20 daarachter een schoon onderwand-gedeelte van dit boventunnelblok wordt onderhouden.In a favorable embodiment of this tunnel arrangement, the continuous supply of liquid cleaning medium to this discharge device takes place for this purpose in a subsequent strip-shaped supply device for the purpose of co-discharging these particles therein of solid substance, typically thereafter the inclusion of a strip-shaped device for typical gaseous lock medium, whereby a clean bottom wall portion of this upper tunnel block is maintained behind it.

Indien benodigd ten behoeve van de bewerkstelliging van een ultra geliikmatige hoogte van zulk een bewerkstelligde laag van de vaste substantie, in dit boventunnelblok 25 achter deze tweede afvoer-inrichting de opname van nog een derde stripvormige tril-inrichting.If required for the purpose of effecting an ultra-uniform height of such an effected layer of the solid substance, in this upper tunnel block 25 the accommodation of a third strip-shaped vibrator behind this second discharge device.

De totale lengte van zulk een tunnel-gedeelte, waarin het opbrengen van zulk een nanometer hoge laag van deeltjes, inclusief zelfs een drietal tril/verwarmings-inrichtin'geu, 30 bedraagt daarbij typisch toch nog minder dan 70 cm.The total length of such a tunnel section, in which the application of such a nanometer-high layer of particles, including even three vibrating / heating devices, is typically still less than 70 cm.

In een gunsige semiconductor werkwijze vindt in tenminste één opwekinrichting boven deze tunnel-opstelling de bewerkstelliging van ionen als nanometer grote deeltjes van een vaste substantie, welke reeds algemeen worden toegepast 35 in de bestaande semiconductor installaties onder de gebruikmaking van wafers, plaats en waarbij in een eronder gelegen meng-inrichting de opname van deze ionen in typisch laag-kokend vloeibaar draagmedium met een hoger percentage 4 ervan plaats.In a favorable semiconductor process in at least one generating device above this tunnel arrangement, the realization of ions as nanometer-sized particles of a solid substance, which are already generally used in existing semiconductor installations using wafers, takes place and in which a Underneath the mixing device, the incorporation of these ions into typically low-boiling liquid carrier medium with a higher percentage of 4 takes place.

Daarbij vindt via tenminste één toevoer leiding de ononderbroken toevoer ervan naar de eerste meng-inrichting van deze medium-toevoerinrichting plaats ten behoeve van de 5 menging ervan met een hoog percentage typisch gelijksoortig vloeibaar draagmedium en met afvoer van deze gemengde substantie naar de daarop-volgende, eronder gelegen tweede meng-inrichting en waarin de menging van deze combinatie plaats vindt in wederom een hoog percentage van typisch 10 eveneens hetzelfde laag-kokende vloeibare draagmedium geschiedt, met vervolgens afvoer van deze gemengde combinatie via een aantal kanalen naar het stripvormige toevoer-gedeelte in de onderwand van deze stripvormige toevoer-inrichting.The uninterrupted supply thereof to the first mixing device of this medium supply device takes place via at least one supply line for the purpose of mixing it with a high percentage of typically similar liquid carrier medium and with discharge of this mixed substance to the subsequent one , a second mixing device located below and in which the mixing of this combination takes place, again takes place in a high percentage of typically the same low-boiling liquid carrier medium, with subsequent discharge of this mixed combination via a number of channels to the strip-shaped feed section in the bottom wall of this strip-shaped feed device.

15 Daarbij vervolgens in het bovenspleet-gedeelte onder zulk een trillende transducer, welke tevens fungeert als een voldoende warmte-bron, de bewerkstelliging van een dampvormig draagmedium voor deze ionen onder een optimale inwerking ervan op de boventopography van de opvolgende, eronderlangs 20 verplaatsende semiconductor substraat-gedeeltes, zoals onder andere het daarmede plaatsvinden van een implantage/ doping-proces met behulp van deze ionenNext, in the upper crevice section beneath such a vibrating transducer, which also acts as a sufficient heat source, the establishment of a vapor-like carrier medium for these ions while optimally acting on the upper topography of the subsequent semiconductor substrate moving underneath it. portions, such as, among other things, the implementation of an implantation / doping process with the aid of these ions

Tevens in een ander proces het geledelijk vullen met deze ionen van de in een voorgaand tunnel-gedeelte bewerkstelligde 25 nanometer brede uitsparingen (crevices).Also in another process the filling of the ions 25 crimeters wide (crevices) achieved with these ions in the previous tunnel section.

Mede ten behoeve van een optimaal semiconductor behandelings-proces daartoe voor deze transducer-trillingen een snelle neerwaartse en een daarop-volgende langzame opwaartse verplaatsing van de onder-trilwand ervan ten 30 behoeve van het optimaal indringen van deze ionen.Partly for the purpose of an optimum semiconductor treatment process for this transducer vibrations, a rapid downward and a subsequent slow upward movement of its lower vibrating wall for the purpose of optimally penetrating these ions.

Indien benodigd, in opvolgende tunnel-gedeeltes het plaatsvinden van een aantal herhalingen van zulke semiconductor behandelingen.If required, the occurrence of a number of repetitions of such semiconductor treatments in subsequent tunnel sections.

Verder-,is deze tunnel-opstelling zodanig uitgevoerd en 35 bevattende zodanige middelen, dat daar bij daarin tevens de mogelijke toepassing van meerdere van de middelen en werkwijzen van de semiconductor faciliteit, - installatie, - tunnel-opstellingen en - inrichtingen, welke door de 5 aanvrager zijn aangegeven en omchreven in de door hem recent ingediende Nederlandse Octrooi-aanvragen betreffende zulk een semiconductor tunnel-opstelling.Furthermore, this tunnel arrangement is designed and includes such means that it also includes the possible application of several of the means and methods of the semiconductor facility, installation, tunnel arrangements and devices provided by the The applicant has been indicated and described in the Dutch Patent Applications recently submitted by him concerning such a semiconductor tunnel arrangement.

verder is aeze tunnel-opstelling zodanig uitgevoerd en 5 bevattende zodanige middelen, dat daarbij daarin mogelijk de toepassing van alle reeds algemeen gebruikt wordende semiconductor behandelingen voor wafers in semiconductor modules, ook welke reeds zijn omschreven in Octrooien, indien daarin de vermelding in de tekst en Conclusies van het 10 navolgende: a) een individuele semiconductor wafer of - substraat; of b) een al dan niet individuele semiconductor processing-module .furthermore, this tunnel arrangement has been designed in such a way and containing such means that it may thereby include the use of all semiconductor treatments that are already generally used for wafers in semiconductor modules, including those already described in Patents, if the mention thereof in the text and Conclusions of the following: a) an individual semiconductor wafer or substrate; or b) an individual or non-individual semiconductor processing module.

Verder is deze tunnel-opstelling zodanig uitgevoerd en 15 bevattende zodanige middelen, dat daarbij de in deze Octrooiaanvrage omschreven middelen en werkwijzen tevens toepasbaar zijn in deze boven-vermelde semiconductor tunnel-opstellingen.Furthermore, this tunnel arrangement is designed and contains such means that the means and methods described in this Patent Application can also be used in these semiconductor tunnel arrangements mentioned above.

De uitvinding zal hieronder nader worden uiteengezet•aan de hand van de in de Figuren weergegeven uitvoerings-20 voorbeelden van de constructies volgens de uitvinding.The invention will be explained in more detail below with reference to the exemplary embodiments of the constructions according to the invention shown in the Figures.

Figuur 1 toont wederom de in de Figuur 1 van deze eerste aanvage aangegeven semiconductor tunnel-opstelling, met daarin een stripvormige medium-toevoerinrichting, waarin het plaatsvinden van een ononderbroken toevoer van de combinatie 25 van vloeibaar draagmedium en deeltjes van de nanometer grote deeltjes substantie in een vaste vorm ervan en waarbij daarin in het bovenste gedeelte ervan de opname van een eerste typisch cilindrische meng-inrichting ten behoeve van het daarin mengen van een laag percentage van tenminste mede zulk 30 een semiconductor substantie met een typisch hoger percentage vloeibaar draagmedium en waarbij deze meng-inr ichting aan de onderzijde ervan via typisch een aantal naast elkaar gelegen medium-toevoerkanalen is aangesloten op een tweede, eveneens typisch cilindrische meng-inrichting, met daarin eveneens de 3 5 toevoer van een aanzienlijk hoger percentage van typisch hetzelfde vloeibare draagmedium ten behoeve van het in benedenwaartse richting afvoeren van deze combinatie van dit draagmedium en zulke deeltjes van een semiconductor substantie 6 naar het eronder-gelegen stripvormige toevoer-gedeelte van de bovenspleet boven de ononderbroken erdoorheen verplaatsende semiconductor substraat-gedeeltes.Figure 1 again shows the semiconductor tunnel arrangement, shown in Figure 1 of this first claim, with a strip-shaped medium supply device therein, in which the uninterrupted supply of the combination of liquid carrier medium and particles of the nanometer-large particle substance into a fixed form thereof and wherein therein accommodates in the upper part thereof a first typical cylindrical mixing device for mixing therein a low percentage of at least partly such a semiconductor substance with a typically higher percentage of liquid carrier medium and wherein this mixing device at its bottom via typically a number of adjacent medium supply channels is connected to a second, also typically cylindrical mixing device, which also contains therein the supply of a considerably higher percentage of typically the same liquid carrier medium for the purpose of draining down d This combination of this carrier medium and such particles from a semiconductor substance 6 to the underlying strip-shaped feed portion of the upper slit above the continuously moving semiconductor substrate portions therethrough.

Figuur 2 toont in deze tunnel-opstelling achter deze 5 medium-toevoerinrichting een in het boventunnelblok opgenomen uitwisselbare stripvormige transducer-opstelling, waarbij in het compartiment ervan de opname van een transducer ten behoeve van typisch het daarmede verdampen van het laag-kokende vloeibare draagmedium onder neerslag van de deeltjes 10 semiconductor substantie op de opvolgende, ononderbroken eronderlangs verplaatsende semiconductor substraat-gedeeltes en waarbij via het erboven gelegen bovenspleet-gedeelte met een toenemende hoogte ervan afvoer van het gevormde dampvormige medium naar de daarop-volgende stripvormige 15 afvoer-inrichting, welke eveneens is opgenomen in dit boventunnelblok.Figure 2 shows in this tunnel arrangement behind this medium supply device an interchangeable strip-shaped transducer arrangement included in the upper tunnel block, wherein in its compartment the accommodation of a transducer for the purpose of evaporating the low-boiling liquid carrier medium therewith precipitation of the particulate semiconductor substance on the successive, continuously moving semiconductor substrate portions therebetween and wherein via the superimposed upper slit portion with an increasing height thereof discharge of the formed vaporous medium to the subsequent strip-shaped discharge device, which is also included in this upper tunnel block.

Daarbij dus typisch uitsluitend de toepassing van laag-kokend vloeibaar draagmedium.Thereby, therefore, typically only the use of low-boiling liquid carrier medium.

Figuren 2A ® tonen zeer sterk vergroot de opvolgende 20 phasen van het neerslag-proces van deze deeltjes vaste substantie op de opvolgende, ononderbroken eronderlangs verplaatsende semiconductor substraat-gedeeltes.Figures 2A ® show greatly enlarged the successive phases of the deposition process of these particles of solid substance on the successive, continuously moving semiconductor substrate sections underneath it.

Figuren 2E, F en G tonen zeer sterk vergroot de neerslag van deze deeltjes vaste substantie op een metalen 25 di-electrische - en kunststof-onderlaag.Figures 2E, F and G show greatly increased precipitation of these particles of solid substance on a metal, dielectric and plastic substrate.

Figuur 3 toont achter deze transducer-opstelling een stripvormige toevoer-inrichting voor reinigingsmedium, met afvoer ervan via deze afvoer-inrichting ten behoeve van het gereinigd houden van tenminste het tussen-gelegen onderwand-30 gedeelte van het boventunnelblok.Figure 3 shows behind this transducer arrangement a strip-shaped supply device for cleaning medium, with discharge thereof via this discharge device for the purpose of keeping at least the intermediate lower wall portion of the upper tunnel block clean.

Figuur 4 toont achter de in de Figuur 2 mede aangegeven eerste transducer-opstelling een tweede transducer-opstelling ten behoeve van het typisch met behulp van het trillen ervan het plaatsvinden van een egalisatie-35 proces van. deze opgebrachte laag van zulke deeltjes van een vaste substantie, zoals sterk vergroot is aangegeven in de Figuur 4a.Figure 4 shows behind the first transducer arrangement also shown in Figure 2 a second transducer arrangement for the purpose of typically effecting an equalization process with the aid of its vibration. this applied layer of such particles of a solid substance, as greatly enlarged is indicated in Figure 4a.

Daarachter wederom zulk een stripvormige afvoergroef voor 7 tenminste mede nog verdampt vloeibaar draagmedium en daarachter wederom zulk een stripvormige toevoergroef voor reinigings-medium en een daarop-volgende stripvormige toevoergroef voor gasvormig slotmedium.Behind again such a strip-shaped discharge groove for 7, at least partly still evaporated, liquid carrier medium and behind this again such a strip-shaped feed groove for cleaning medium and a subsequent strip-shaped feed groove for gaseous lock medium.

5 Figuur 5 toont als alternatief voor zulk een stripvormige transducer-opstelling de opname in het boventunnelblok van een stripvormige roterende nokkenas-opstelling onder het daarbij tijdens de werking ervan onderhouden van typisch een snelle neerwaartse verplaatsing en een daarop-volgende 10 langzame opwaartse verplaatsing van het stripvormige drukwand-gedeelte ervan ten behoeve van het eveneens bewerkstelligen van een optimaal vlakke conditie van de neergeslagen deeltjes van zulk een vaste semiconductor substantie.Figure 5 shows, as an alternative to such a strip-shaped transducer arrangement, the incorporation into the upper tunnel block of a strip-shaped rotating camshaft arrangement, while maintaining during operation thereof typically a rapid downward displacement and a subsequent slow upward displacement of the strip-shaped pressure wall portion thereof for the purpose of also achieving an optimum flat condition of the precipitated particles of such a solid semiconductor substance.

15 Daarbij in dit dr ukwand-gedeelte de opname van een dunwandige stripvormige electrische verwarmings-inrichting ten behoeve van het daarmede tevens verdampen van het toegevoerde laag-kokende vloeibare draagmedium en het daaronder steeds verder plaatsvinden van zulk een neerslag-20 proces van deze deeltjes van een vaste semiconductor substantie, zoals sterk vergroot is aangegeven in de Figuren 5A t/m D) onder het tenslotte opgebouwd zijn van een typisch nanometer hoge laag van deze deeltjes op de opvolgende, eronderlangs verplaatsende semiconductor substraat-gedeeltes, 25 zoals is aangegeven in de Figuur 5®,The inclusion of a thin-walled strip-shaped electric heating device for the purpose of thereby also evaporating the supplied low-boiling liquid carrier medium and the continuous occurrence of such a deposition process of these particles of a solid semiconductor substance, such as is shown greatly enlarged in Figures 5A to D), while finally being built up of a typically nanometer-high layer of these particles on the subsequent semiconductor substrate portions moving along it, as indicated in the Figure 5®

Figuur 6 toont vergroot een gedeelte van een onder-nokkenasopstelling, welke is opgenomen in het ondertunnelblok.Figure 6 is an enlarged view of a portion of a lower camshaft arrangement included in the sub-tunnel block.

Figuur 7 toont daar bij zeer sterk vergroot een gedeelte van deze tunnel-opstelling en waarbij boven deze trillende 30 drukwand-sectie ervan de opvolgende, zich ononderbroken erbovenlangs verplaatsende en mede erdoor eveneens trillende opvolgende substraat-gedeeltes, met mede de combinatie van een snelle opwaartse - en een daarop-volgende langzame neerwaartse verplaatsing ervan, en daarboven zulk een 35 trillend . transducer-gedeelte met typisch een snelle neerwaartse - en een daarop-volgende langzame opwaartse verplaatsing van het onderwand-gedeelte ervan.Figure 7 shows a portion of this tunnel arrangement with a greatly enlarged view and in which above this vibrating pressure wall section thereof the successive, continuously moving along it and partly also vibrating successive substrate sections, including the combination of a fast upward - and a subsequent slow downward movement thereof, and above such a vibrating one. transducer portion with typically a fast downward - and a subsequent slow upward displacement of its bottom wall portion.

Zulks ten behoeve van een optimaal snel vullen van de in 8 een voorgaand tunnel-gedeelte bewerkstelligde, typisch minder dan 30 nanometer brede uitsparingen/crevices in de bovenlaag van deze opvolgende semiconductor substraat-gedeeltes, zoals uiterst vergroot is aangegeven in de 5 Figuren 8A en 8® en waarbij in de Figuur 8A het tonen van de maximale bewerkstelligde hoogte van het tussen-liggende bovenspleet-gedeelte, en in de Figuur 8® de minimale bewerkstelligde hoogte ervan tijdens zulke tril-condities van deze onder-nokkenasopstelling en deze boven-transducer-10 opstelling.For the purpose of an optimum fast filling of the recesses / crevices in a preceding tunnel section, typically less than 30 nanometer wide, realized in 8 in the upper layer of these successive semiconductor substrate sections, such as is shown extremely enlarged in Figures 8A and 8® and wherein in Figure 8A showing the maximum effected height of the intermediate upper gap portion, and in Figure 8® the minimum effected height thereof during such vibrating conditions of this lower camshaft arrangement and this upper transducer -10 setup.

Figuur 9 toont een meng-inrichting, waarbij daarin in het bovenste gedeelte ervan het ononderbroken mengen plaats vindt van de toegevoerde combinatie van deeltjes van een vaste semiconductor substantie met een hoog percentage laag-kokend 15 vloeibaar draagmedium 16 en in het onderste gedeelte ervan het ononderbroken mengen van deze combinatie met een hoog percentage hoog-kokend vloeibaar draagmedium.Figure 9 shows a mixing device, in which there is continuous mixing in the upper part thereof of the supplied combination of particles of a solid semiconductor substance with a high percentage of low-boiling liquid carrier medium 16 and in the lower part thereof the continuous mixing this combination with a high percentage of high-boiling liquid carrier medium.

Figuur 10 toont in een gedeelte van deze tunnel-opstelling de toepassing in het boventunnelblok ervan een eerste 20 stripvormige transducer-opstelling ten behoeve van het daarmede mede ononderbroken plaatsvinden van verdamping van het laag-kokende vloeibare draagmedium en onder de daaropvolgende tweede transducer-opstelling het daarmede plaatsvinden van verdamping van het hoger-kokende vloeibare 25 draagmedium met daarbij, indien benodigd, achter zulk een stripvormige afvoer-inrichting voor het verdampte vloeibare draagmedium wederom zulk een stripvormige toevoer-inrichting voor reinigings-medium en de daarop-volgende toevoer-inrichting voor gasvormig slot-medium ten behoeve van het 30 gereinigd houden van het daarop-volgende onderwand-gedeelte van dit boventunnelblok.Figure 10 shows in a part of this tunnel arrangement the application in its upper tunnel block a first strip-shaped transducer arrangement for the co-continuous occurrence of evaporation of the low-boiling liquid carrier medium and below the subsequent second transducer arrangement. evaporation of the higher-boiling liquid carrier medium thereby including, if necessary, behind such a strip-shaped discharge device for the evaporated liquid carrier medium, such a strip-shaped feed device for cleaning medium and the subsequent feed device for gaseous lock medium for keeping the subsequent bottom wall portion of this upper tunnel block cleaned.

Daarbij achter deze tweede transducer in het boventunnelblok de opname van een stripvormig electrisch verwarmingselement ten behoeve van het daarmede smelten van deze 35 deeltjes van zulk een vaste substantie onder de vorming van een vloeibare laag ervan en daarachter de opname van een stripvormige afkoel-inrichting ten behoeve van het vormen van een vaste laag ervan.The inclusion of a strip-shaped electric heating element behind this second transducer in the upper tunnel block for the purpose of melting these particles of such a solid substance with the formation of a liquid layer thereof and behind this the inclusion of a strip-shaped cooling device for the purpose of forming a solid layer thereof.

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Figuur llA to oat daarbij het begin van het verhoogde bovenspleet-gedeelte onmiddellijk achter het stripvormige medium-toevoergedeelte van deze medium-toevoerinrichting en waarbij de Figuren 11®> C en D opvolgende gedeeltes van de 5 bovenspleet onder deze beide transducers tonen, met daarin het aangeven van een sterk vergrootte hoogte ervan nabij de beide stripvormige afvoer-inrichtingen achter deze transducer-opstellingen.Figure 11A thereby shows the start of the raised upper slit portion immediately behind the strip-shaped medium supply portion of this medium supply device and where Figures 11®> C and D show successive portions of the upper slit below both of these transducers, including the indicating a greatly increased height thereof near the two strip-shaped discharge devices behind these transducer arrangements.

Figuur 12 toont zeer sterk vergroot in het gedeelte achter 10 deze tweede transducer-opstelling wederom de vulling met nanometer grote deeltjes van een vaste semiconductor substantie van de bewerkstelligde crevices, welke zijn opgenomen in de semiconductor bovenlaag van deze opvolgende, eronderlangs verplaatsende semiconductor substraat-gedeeltes. 15 Figuur 13 toont na het tenminste mede vullen van deze crevices met deze deeltjes van een metalen substantie,met behulp van zulk een electrische verwarmings-inrichting een bewerkstelligde vloeibare laag van deze substantie.Figure 12 shows, greatly enlarged in the portion behind this second transducer arrangement, again the filling with nanometer-sized particles of a solid semiconductor substance of the accomplished crevices, which are contained in the semiconductor upper layer of these successive, semiconductor substrate portions moving alongside . Figure 13 shows after at least co-filling these crevices with these particles of a metal substance, with the aid of such an electric heating device, a liquid layer of this substance obtained.

Figuur 14 toont het afgekoeld zijn van deze vloeibare laag 20 onder de vorming van een vaste conditie van tenminste mede de vulling van deze crevices.Figure 14 shows the cooling of this liquid layer 20 with the formation of a solid condition of at least the filling of these crevices.

Figuur 15 toont daarbij in deze tunnel-opstelling de toepassing van opvolgende gedeeltes van een daarin in de ingangszijde ervan ononderbroken toegevoerde kunststof-f olie, 25 waarbij in de bovenlaag ervan het tenminste mede bewerkstelligd zijn van zulke, met een metaal gevulde crevices.Fig. 15 shows in this tunnel arrangement the use of successive parts of a plastic film continuously supplied therein in the entrance side thereof, wherein in its upper layer at least co-effect of such metal-filled crevices is achieved.

Figuur 16 toont daarbij in deze tunnel-opstelling de toepassing van opvolgende semiconductor substraat-gedeeltes en waarbij in de di-electrische bovenlaag ervan tenminste mede 30 het bewerkstelligd zijn van zulke, met een metalen substantie gevulde crevices.Fig. 16 shows the use of successive semiconductor substrate sections in this tunnel arrangement and in which the dielectric upper layer thereof at least also includes the accomplishment of such crevices filled with a metal substance.

Figuur 17 toont nog achter deze beide transducer-opsteHingen in het boventunnelblok een derde transducer-opstelling ten behoeve van het daarmede wederom plaatsvinden 35 van een egalisatie-proces van deze opgebrachte, typisch nanometer hoge laag van deeltjes van zulk een vaste semiconductor substantie, zoals sterk vergroot is aangegeven in de Figuren 18^ en 18^, en zulks ten behoeve van het in de 10 daarop-volgende tunnel-gedeeltes plaatsvinden van zulk een ononderbroken verwarmings-proces onder de vorming van een nanometer hoge vloeibare laag van deze semiconductor substantie, en het daarop-volgende afkoel-proces van deze 5 vloeibare laag onder de vorming van een vaste conditie ervan.Figure 17 shows behind these two transducer arrangements in the upper tunnel block a third transducer arrangement for the purpose of again taking place an equalization process of this applied, typically nanometer high layer of particles of such a solid semiconductor substance, such as strong is shown in an enlarged manner in Figures 18 ^ and 18 ^, and for the purpose of the occurrence of such a continuous heating process in the subsequent tunnel sections, with the formation of a nanometer-high liquid layer of this semiconductor substance, and the subsequent cooling process of this liquid layer to form a solid condition thereof.

De Figuur 1 toont nog een inrichting ten behoeve van de bewerkstelliging van typisch minder dan 5 nanometer grote deeltjes van een vaste, typisch metalen substantie en waarbij daaronder een meng-inrichting ten behoeve van het mengen van 10 deze deeltjes met typisch een hoger percentage laag-kokend vloeibaar draagmedium ten behoeve van de ononderbroken toevoer ervan naar deze bovenste meng-inrichting van deze medium-toevoerinrichting.Figure 1 shows another device for producing typically less than 5 nanometer large particles of a solid, typically metal substance, and below which is a mixing device for mixing these particles with typically a higher percentage of low particles. boiling liquid carrier medium for the uninterrupted supply thereof to this upper mixer of this medium supply device.

De uitvinding zal hieronder nader worden uiteengezet aan 15 de hand van de in deze Figuren aangegeven inrichtingen ten behoeve van de opbouw van een nanometer hoge laag van vaste deeltjes op de opvolgende semiconductor substraat-gedeeltes.The invention will be explained in more detail below with reference to the devices shown in these Figures for the construction of a nanometer-high layer of solid particles on the subsequent semiconductor substrate sections.

Figuur 1 toont in het boventunnelblok 12 van de semiconductor tunnel-opstelling 10 de opname van de 20 stripvormige medium-toevoerinrichting 14, waarin het plaatsvinden van een ononderbroken toevoer van de combinatie van vloeibaar draagmedium 16 en deeltjes 18 van een vaste semiconductor substantie en waarbij daarin in het bovenste gedeelte ervan de opname van typisch de eerste cilindrische 25 meng-inrichting 20 ten behoeve van het daarin mengen van een laag percentage van tenminste mede zulke deeltjes 18 met een hoog percentage vloeibaar draagmedium, welke daarbij typisch gelijk kan zijn aan dit draagmedium 16, en waarbij deze meng-inrichting 20 aan de onderzijde ervan via typisch een aantal 30 naast elkaar gelegen medium-afvoerkanalen 24 is aangesloten op een tweede, eveneens typisch cilindrische meng-inrichting 26, met daarin eveneens de continue toevoer van een aanzienlijk hoger percentage van typisch hetzelfde vloeibare draagmedium 16 ten behoeve van het in beneden-35 waartse richting afvoeren van deze combinatie draagmedium 16 en zulke deeltjes 18 van deze semiconductor substantie via een groot aantal naast elkaar gelegen kanalen 28 naar het eronder gelegen stripvormige toevoer-gedeelte 30 van de 11 bovenspleet 32 van deze tunnel-opstelling 10 boven de eveneens tijdens de werking van deze tunnel-opstelling ononderbroken erdoorheen verplaatsende semiconductor substraat-gedeeltes 34.Figure 1 shows in the upper tunnel block 12 of the semiconductor tunnel arrangement 10 the incorporation of the strip-shaped medium supply device 14, in which there is a continuous supply of the combination of liquid carrier medium 16 and particles 18 of a solid semiconductor substance and in which therein in the upper part thereof the accommodation of typically the first cylindrical mixing device 20 for the purpose of mixing therein a low percentage of at least such particles 18 with a high percentage of liquid carrier medium, which may thereby be typically equal to this carrier medium 16 and wherein said mixing device 20 is connected at its underside via typically a number of adjacent medium discharge channels 24 to a second, likewise typically cylindrical mixing device 26, which also contains therein the continuous supply of a considerably higher percentage of typically the same liquid carrier medium 16 for the downward direction discharge of this combination of carrier medium 16 and such particles 18 of this semiconductor substance through a large number of adjacent channels 28 to the underlying strip-shaped supply portion 30 of the 11 upper slit 32 of this tunnel arrangement 10 above the also during operation of this tunnel arrangement continuous semiconductor substrate portions 34 moving therethrough.

5 Figuur 2 toont in deze tunnel-opstelling 10 achter deze medium-toevoerinrichting 14 de in het boventunnelblok 12 opgenomen uitwisselbare stripvormige transducer-opstelling 38, waarbij in het compartiment 40 ervan de opname van de stripvormige transducer 42 ten behoeve van typisch het 10 daarmede verdampen van het laag-kokende vloeibare draagmedium onder neerslag van deze deeltjes 18 op de opvolgende, ononderbroken eronderlangs verplaatsende semiconductor substr aat-gedeeltes 34 onder tr il-conditie ervan en waarbij via het erboven gelegen gedeelte 44 met een toenemende 15 hoogte ervan afvoer van het gevormde dampvormige medium 46 plaats vindt naar de daarop-volgende stripvormige afvoer-inrichting 48, welke eveneens is opgenomen in dit boventunnelblok 12.Figure 2 shows in this tunnel arrangement 10 behind this medium supply device 14 the exchangeable strip-shaped transducer arrangement 38 accommodated in the upper tunnel block 12, wherein in its compartment 40 the accommodation of the strip-shaped transducer 42 for the purpose of typically evaporating therewith is shown. of the low-boiling liquid carrier medium while depositing these particles 18 on the subsequent semiconductor substrate continuously moving underneath portions 34 under its tr condition and with the upper portion 44 having an increasing height discharging the formed vaporous medium 46 takes place to the subsequent strip-shaped discharge device 48, which is also included in this upper tunnel block 12.

Figuren 2^> B en C tonen zeer sterk vergroot de neerslag 20 van de combinatie van de:d?eeltjes van de vaste substantie 18 en vloeibaar draa^gmedium 16 op de opvolgende semiconductor substraat-gedeeltes 34, welke worden meeverplaatst door de metalen band 36 onder daarbij een afnemende hoogte van deze combinatie.Figures 2> B and C show greatly increased precipitation 20 of the combination of the particles of the solid substance 18 and liquid spinning medium 16 on the subsequent semiconductor substrate portions 34, which are co-displaced by the metal strip 36 with a decreasing height of this combination.

25 Figuur 2^ toont zeer sterk vergroot de neerslag van uitsluitend deze deeltjes van de vaste substantie 18 op deze opvolgende substraat-gedeeltes 34 ter plaatse van het achter-gedeelte van deze transducer 42.Figure 2 shows greatly increased precipitation of only these particles of the solid substance 18 on these successive substrate portions 34 at the rear portion of this transducer 42.

Figuur 2^ toont daarbij zeer sterk vergroot de neerslag 30 van uitsluitend deze deeltjes van de vaste substantie 18 op de metalen semiconductor onderlaag 76.Figure 2 ^ shows a very large increase in the precipitation 30 of only these particles of the solid substance 18 on the metal semiconductor substrate 76.

Figuur 2^ toont zulk een neerslag van deze deeltjes vaste substantie op de di-electrische bovenlaag 78 van de opvolgende semiconductor substraat-gedeeltes 34.Figure 2 shows such a deposit of these particles of solid substance on the dielectric top layer 78 of the subsequent semiconductor substrate portions 34.

35 Figuur 2^ toont zulk een neerslag van deze vaste substantie 18 op de kunststof bovenlaag 80 van de opvolgende semiconductor substraat-gedeeltes.Figure 2 shows such a deposit of this solid substance 18 on the plastic top layer 80 of the subsequent semiconductor substrate portions.

In de Figuur 3 is achter deze afvoer-inrichting 62 de 12 stripvormige toevoer-inrichting 64 voor typisch reinigings-medium 66 aangegeven, met mede afvoer ervan via deze afvoer-inrichting ten behoeve van het gereinigd/schoonhouden van het tussengelegen onderwand-gedeelte 68 van het 5 boventunnelblok 12.Figure 3 shows behind this discharge device 62 the 12 strip-shaped feed device 64 for typical cleaning medium 66, including its discharge via this discharge device for the purpose of cleaning / keeping the intermediate lower wall portion 68 of the upper tunnel block 12.

Zulk een toevoer-inrichting voor reinigings-medium is onder andere gewenst bij toepassing van de via deze toevoer- inrichting toegevoerde deeltjes van de substantie 18', waarbij het mogelijk tevens plaatsvinden van een beperkte 10 neerslag van deeltjes op het voorgaande onderwand-gedeelte 68.Such a supply device for cleaning medium is desirable inter alia when using the particles of the substance 18 'supplied via this supply device, whereby it is possible that a limited precipitation of particles on the preceding bottom wall portion 68 may also take place.

Achter deze toevoer-inrichting 64 de opname van de stripvormige toevoer-inrichting 70 ten behoeve van het ononderbroken toevoeren van gasvormig medium 72, met mede 15 afvoer ervan via deze afvoer-inrichting 62 ten behoeve van het tevens onderhouden van zulk een schoonhouden van tevens het tussen-gelegen onderwand-gedeelte 74 van dit blok 12.Behind this supply device 64 the accommodation of the strip-shaped supply device 70 for the uninterrupted supply of gaseous medium 72, including its discharge via this discharge device 62 for the purpose of also maintaining such a cleaning of the intermediate bottom wall portion 74 of this block 12.

Figuur 4 toont achter de in de Figuur 2 mede aangegeven eerste transducer-opstelling 38 een tweede transducer-20 opstelling 52 ten behoeve van het typisch met behulp van het trillen ervan het plaatsvinden van een egalisatie-proces van deze opgebrachte laag van zulke deeltjes 18 van een vaste substantie, zoals sterk vergroot is aangegeven in de Figuur 4A.Figure 4 shows behind the first transducer arrangement 38 co-indicated in Figure 2 a second transducer arrangement 52 for the purpose of typically using a vibration thereof to effect a leveling process of this applied layer of such particles 18 of a solid substance, such as greatly enlarged is indicated in Figure 4A.

25 Daarbij het onderhouden van een minimale micrometer hoogte van de opvolgende bovenspleet-gedeeltes 44 ten behoeve van zulk een egalisatie-proces van de opgebrachte, typisch nanometer hoge laag van deze deeltjes 18.Thereby maintaining a minimum micrometer height of the subsequent upper slit portions 44 for such an equalization process of the applied, typically nanometer high layer of these particles 18.

Daarachter wederom zulk een stripvormige afvoer-30 opstelling 62 voor tenminste mede nog verdampt vloeibaar draagmedium 66 en daarachter wederom zulk een stripvormige toevoergroef-opstelling 64 voor reinigings-medium 68 em de daarop-volgende stripvormige toevoergroef-opstelling 70 voor gasvormig slotmedium 72.Behind again such a strip-shaped drain arrangement 62 for at least co-evaporated liquid carrier medium 66 and behind this again a strip-shaped feed slot arrangement 64 for cleaning medium 68 and the subsequent strip-shaped feed slot arrangement 70 for gaseous lock medium 72.

35 Figuur 5 toont als alternatief voor zulk een stripvormige transducer-opstelling de opname in het boventunnelblok 12 van een stripvormige roterende nokkenas-opstelling 98 onder daarbij tijdens de werking ervan het aangegeven zijn van het 13 onderhouden van typisch een snelle neerwaartse verplaatsing en een daarop-volgende langzame opwaartse verplaatsing van het stripvormige drukwand-gedeelte van de nokkenas 100 ten behoeve van het daarmede eveneens bewerkstelligen van een 5 optimaal vlakke conditie van de neergeslagen deeltjes 18 van zulk een vaste semiconductor substantie.Figure 5 shows, as an alternative to such a strip-shaped transducer arrangement, the incorporation into the upper tunnel block 12 of a strip-shaped rotary camshaft arrangement 98 while, during its operation, it is indicated that it maintains typically a rapid downward movement and a subsequent downward movement. subsequent slow upward movement of the strip-shaped pressure wall portion of the camshaft 100 for thereby also achieving an optimally flat condition of the precipitated particles 18 of such a solid semiconductor substance.

Daar bij in dit dr ukwand-gedeelte 102 de opname van een dunwandige stripvormige electrische verwarmings-inrichting 104 ten behoeve van het daarmede tevens verdampen 10 van het vloeibare draagmedium onder het plaatsvinden van zulk neerslag-proces van deze deeltjes 18 van de vaste semiconductor substantie, zoals zeer sterk vergroot is aangegeven in de Figuren 5A t/® ®, onder het tenslotte op gebouwd zijn van een typisch nanometer hoge laag van deze 15 deeltjes 18 op de opvolgende eronderlangs verplaatsende metalen folie-gedeeltes 106, zoals is aangegeven in de Figuur 5®.In addition, the inclusion of a thin-walled strip-shaped electric heating device 104 for the purpose of thereby also evaporating the liquid carrier medium in this pressure-wall portion 102 while taking place such a deposition process of these particles 18 of the solid semiconductor substance, as is shown to be greatly enlarged in Figures 5A t / ® ®, finally being built up of a typical nanometer-high layer of these particles 18 on the subsequent metal foil sections 106 moving therebetween, as shown in Figure 5 ®.

Verder vindt via de toevoer-leiding 108 de ononderbroken toevoer van vloeibaar medium 110 naar het nokkenas-20 compartiment 112 plaats, met de ononderbroken afvoer ervan via de afvoer-leiding 114.Further, via the supply line 108, the continuous supply of liquid medium 110 to the camshaft compartment 112 takes place, with its uninterrupted discharge via the discharge line 114.

Verder is nog in de Figuur 1 de opname aangegeven van de inrichting 116, waarin tijdens de werking ervan de ononderbroken bewerkstelliging van typisch minder dan 25 5 nanometer grote deeltjes van zulk een vaste, typisch veelal metalen semiconductor substantie 18 en waarbij deze inrichting via typisch een aantal toevoer-leidingen 118 is aangesloten op de eronder gelegen meng-inrichting 120 , en waarin het ononderbroken plaatsvinden van het mengen ervan met een 30 daarop ononderbroken toegevoerd hoger percentage van typisch eveneens het laag-kokende vloeibare draagmedium 16.Furthermore, Figure 1 also shows the recording of the device 116, in which during its operation the uninterrupted realization of typically less than 5 nanometer large particles of such a solid, typically mostly metal semiconductor substance 18 and wherein this device via typically a a plurality of supply lines 118 is connected to the underlying mixing device 120, and in which the continuous occurrence of mixing thereof with a continuously supplied higher percentage of the low-boiling liquid carrier medium 16, which is also continuously supplied thereon.

Daarbij het via typisch eveneens meerdere naast elkaar gelegen leidingen 122 ononderbroken toevoer ervan naar deze medium-toevoerinrichting 14.Thereby the continuous supply thereof via typically also several adjacent pipes 122 to this medium supply device 14.

35 Figuur 6 toont vergroot aangegeven een gedeelte van de toegepaste onder-nokkenasopstelling 124. welke is opgenomen in het ondertunnelblok 14.Figure 6 shows, in enlarged fashion, a portion of the lower camshaft arrangement 124 used which is included in the sub-tunnel block 14.

Daarbij met behulp van deze roterende nokkenas-opstelling 14 het ononderbroken op- en neerwaarts verplaatsen van het stripvormige drukwand-gedeelte 126.Thereby, with the aid of this rotating camshaft arrangement 14, the continuous up and downward movement of the strip-shaped pressure wall portion 126.

Deze nokkenas-opstelling bevat daarbij de nokken 128, welke daarbij typisch bestaan uit het relatief korte gedeelte 130 5 en het relatief lange gedeelte 132 en waarbij tijdens het verdraaien ervan met behulp van deze opvolgende nokken een opvolgend op- en neerwaarts verplaatsen van dit drukwand-gedeelte 126 plaats vindt, met daarbij een snelle opwaartse-en een daarop-volgende langzame neerwaartse verplaatsing 10 ervan en tevens met behulp van dit drukwand-gedeelte het ononderbroken op- en neerwaartse verplaatsing van de ononderbroken erbovenlangs verplaatsende semiconductor substraat-gedeeltes 34, zoals is aangegeven in de Figuur 7 en zeer sterk vergroot in de Figuren 8A en 8^.This camshaft arrangement herein includes the cams 128, which typically consist of the relatively short portion 130 and the relatively long portion 132 and wherein during their rotation with the aid of these successive cams a successive up and down movement of this pressure wall part 126 takes place, with a rapid upward and a subsequent slow downward movement thereof 10 and also with the aid of this pressure wall part the continuous up and down movement of the continuous semiconductor substrate parts 34 moving along it indicated in Figure 7 and greatly enlarged in Figures 8A and 8 ^.

15 Verder in het boventunnelblok 12 de opname van de stripvormige transducer 42 en waar bij de trillingen ervan typisch een snelle neerwaartse- en een daarop-volgende langzame opwaartse verplaatsing hebben, zoals eveneens is aangegeven in deze Figuur 7.Further, in the upper tunnel block 12, the inclusion of the strip-shaped transducer 42 and where its vibrations typically have a fast downward and a subsequent slow upward movement, as also indicated in this Figure 7.

20 Zulks mede ten behoeve van een optimaal snel vullen van de in een voorgaand tunnel-gedeelte bewerkstelligde, typisch minder dan 30 nanometer brede uitsparingen/crevices 134 in de di-electrische bovenlaag 136 van deze opvolgende semiconductor substraat-gedeeltes 34, zoals uiterst vergroot 25 is aangegeven in de Figuren 8^ en 8® en waarbij in dePartly for the purpose of an optimum rapid filling of the recesses / crevices 134 in the preceding tunnel section, typically less than 30 nanometer wide, in the dielectric upper layer 136 of these successive semiconductor substrate sections 34, as extremely enlarged. is indicated in Figures 8 ^ and 8® and where in the

Figuur 8^ het tonen van de maximale bewerkstelligde hoogte van het tussen-liggende bovenspleet-gedeelte 46, en in de Figuur 8® de minimale bewerkstelligde hoogte ervan tijdens zulke tril-condities van deze onder-nokkenasopstelling en 30 deze boven-transduceropstelling.Figure 8 shows the maximum effected height of the intermediate top gap portion 46, and in Figure 8® the minimum effected height during such vibrating conditions of this lower camshaft arrangement and this upper transducer arrangement.

Figuur 9 toont de meng-inrichting 140, waarbij daarin in het bovenste gedeelte ervan het ononderbroken mengen plaats vindt van de toegevoerde combinatie van deeltjes van een vaste semiconductor substantie 18 met een hoog percentage 35 laag-kokend vloeibaar draagmedium 16 en in het onderste gedeelte ervan het ononderbroken mengen van deze combinatie met een hoog percentage hoog-kokend vloeibaar draagmedium 142.Figure 9 shows the mixing device 140, in which in the upper part thereof there is continuous mixing of the supplied combination of particles of a solid semiconductor substance 18 with a high percentage of low-boiling liquid carrier medium 16 and in the lower part thereof the continuous mixing of this combination with a high percentage of high-boiling liquid carrier medium 142.

1515

Figuur 10 toont in een gedeelte van deze tunnel-opstelling 10 de toepassing in het boventunnelblok 12 ervan een eerste stripvormige transducer-opstelling 144 ten behoeve van het daarmede ononderbroken plaatsvinden van 5 verdamping van het laag-kokende vloeibare draagmedium 16 en onder de daarop-volgende tweede transducer-opstelling 146 het daarmede plaatsvinden van verdamping van het hoger-kokende vloeibare draagmedium 142 met daarbij, indien benodigd, achter zulk een stripvormige afvoer-inrichting 62 10 voor het verdampte vloeibare draagmedium wederom zulk een stripvormige toevoer-inrichting voor reinigings-medium en de daarop-volgende toevoer-inrichting voor gasvormig slotmedium ten behoeve van het gereinigd houden van het daaropvolgende onderwand-gedeelte van dit boventunnelblok en zoals 15 is aangegeven in de Figuur 3.Figure 10 shows in a part of this tunnel arrangement 10 the use in the upper tunnel block 12 thereof of a first strip-shaped transducer arrangement 144 for the uninterrupted occurrence of evaporation of the low-boiling liquid carrier medium 16 and under the following second transducer arrangement 146 thereby the evaporation of the higher-boiling liquid carrier medium 142, with, if necessary, behind such a strip-shaped discharge device 62 for the evaporated liquid carrier medium again such a strip-shaped supply device for cleaning medium and the subsequent supply device for gaseous lock medium for keeping the subsequent bottom wall portion of this upper tunnel block clean and as indicated in Figure 3.

Achter deze tweede afvoer-inrichting in dit blok 12 de opname van een stripvormig electrisch verwarmingselement 148 ten behoeve van het daarmede smelten van deze deeltjes 16 van zulk een vaste substantie onder de vorming 20 van de vloeibare laag 150 ervan en daarachter de opname van de stripvormige afkoel-inrichting 152 ten behoeve van het vormen van de vaste laag 154 ervan.Behind this second discharge device in this block 12 the accommodation of a strip-shaped electric heating element 148 for melting these particles 16 of such a solid substance with it, forming the liquid layer 150 thereof and thereafter the accommodation of the strip-shaped cooling device 152 for forming its solid layer 154.

Figuur 11^ toont daarbij het begin van het verhoogde bovenspleet-gedeelte 156 onmiddellijk achter het stripvormige 25 medium-toevoergedeelte 158 van deze medium-toevoerinrichting 140 en waarbij de Figuren 11B> C en D de opvolgende gedeeltes 160, 162 en 164 van de bovenspleet onder deze beide transducers 144 en 146 tonen, met daarin het aangeven van de sterk toenemende hoogtes ervan.Figure 11 ^ shows the start of the raised upper slit portion 156 immediately after the strip-shaped medium supply portion 158 of this medium supply device 140 and with Figures 11B> C and D the successive portions 160, 162 and 164 of the upper slit below these show both transducers 144 and 146, indicating the strongly increasing heights.

30 Figuur 12 toont zeer sterk vergroot in het gedeelte achter deze tweede transducer-opstelling 146 wederom de vulling met nanometer grote deeltjes 18 van deze vaste semiconductor substantie van de bewerkstelligde crevices 166, welke zijn opgenomen in de semiconductor bovenlaag 168 van 35 deze opvolgende, eronderlangs verplaatsende semiconductor substraat-gedeeltes 34.Figure 12 shows, greatly enlarged in the portion behind this second transducer arrangement 146, again the filling with nanometer-sized particles 18 of this solid semiconductor substance of the accomplished crevices 166, which are included in the semiconductor top layer 168 of these successive, beneath them moving semiconductor substrate portions 34.

Figuur 13 toont na het tenminste mede vullen van deze crevices 166 met deze deeltjes 18 van een metalen substantie, 16 met behulp van zulk een electrische verwarmings-inrichting 148 de bewerkstelligde vloeibare laag 150 van deze substantie.Figure 13 shows, after at least co-filling these crevices 166 with these particles 18 of a metal substance, 16 with the aid of such an electric heating device 148, the liquid layer 150 of this substance produced.

Figuur 14 toont het afgekoeld zijn van deze vloeibare 5 laag 150 onder de vorming van de vaste laag 152 en onder het daarmede tenminste mede gevuld zijn van deze crevices.Figure 14 shows the cooling of this liquid layer 150 with the formation of the solid layer 152 and with these crevices being at least co-filled therewith.

Figuur 15 toont daar bij in deze tunnel-ops telling 10 de toepassing van opvolgende gedeeltes van de daarin in de ingangszijde ervan ononderbroken toe gevoerde kunststof-10 folie 170, waarbij in de bovenlaag 172 ec van het tenminste mede bewerkstelligd zijn van zulke, met een metaal gevulde crevices 166.Figure 15 shows therein in this tunnel storage 10 the use of successive parts of the plastic film 170 continuously supplied therein in the entrance side thereof, wherein in the top layer 172 ec of at least co-effect of such, with a metal-filled crevices 166.

Figuur 16 toont daarbij in deze tunnel-opstelling de toepassing van opvolgende semiconductor substraat-15 gedeeltes 34 en waarbij in de di-electrische bovenlaag 174 ervan tenminste mede het bewerkstelligd zijn van zulke, met een metalen substantie gevulde crevices 166.Fig. 16 shows the use of successive semiconductor substrate sections 34 in this tunnel arrangement and in which the dielectric upper layer 174 thereof at least also contributes to the creation of such crevices 166 filled with a metal substance.

Figuur 17 toont nog achter deze beide transducer-opstellingen 144 en 146 in het boventunnelblok 12 de opname 20 van de derde transducer-opstelling 176 ten behoeve van het daarmede wederom plaatsvinden van een egalisatie-proces van deze opgebrachte, typisch nanometer hoge laag 178 van deeltjes 18 van zulk een vaste semiconductor substantie, zoals sterk vergroot is aangegeven in de Figuren 18^ en 18®» 25 en zulks ten behoeve van het in de daarop-volgende tunnel-gedeeltes plaatsvinden van zulk een ononderbroken verwarmings-proces met behulp van zulk een electrische verwarmings-inrichting 148 onder de vorming van de nanometer hoge vloeibare laag 180 van deze semiconductor substantie 18, 30 en in de daarop-volgende afkoel-inrichting 152 plaatsvinden van een afkoel-proces van deze vloeibare laag onder de vorming van de vaste laag 182 ervan.Figure 17 still shows behind these two transducer arrangements 144 and 146 in the upper tunnel block 12 the accommodation 20 of the third transducer arrangement 176 for the purpose of again taking place an equalization process of this applied, typically nanometer-high layer 178 of particles 18 of such a solid semiconductor substance, as greatly enlarged is indicated in FIGS. 18 and 18, and for the purpose of such an uninterrupted heating process taking place in the subsequent tunnel sections with the aid of such a electric heating device 148 with the formation of the nanometer-high liquid layer 180 of this semiconductor substance 18, 30 and in the subsequent cooling device 152 of a cooling process of this liquid layer taking place with the formation of the solid layer 182 of it.

Verder is deze tunnel-opstelling zodanig uitgevoerd en bevattende zodanige middelen, dat daarbij daarin tevens de 35 mogelijke toepassing van meerdere van de middelen en werkwijzen van de semiconductor faciliteit, -installatie, -tunnel-opstellingen en - inrichtingen, welke zijn aangegeven en omschreven in de recent door de aanvrager ingediende 17Furthermore, this tunnel arrangement is designed and contains such means that it also includes the possible application of several of the means and methods of the semiconductor facility, installation, tunnel arrangements and devices, which are indicated and described in 17 recently submitted by the applicant

Nederlandse Octrooi-aanvragen betreffende zulk een semiconductor tunnel-opstelling.Dutch Patent Applications concerning such a semiconductor tunnel arrangement.

Verder, dat daarbij daarin de mogelijke toepassing van alle reeds algemeen gebruikt wordende semiconductor behandelingen 5 voor wafers in semiconductor modules, ook welke reeds zijn omschreven in Octrooien, indien daarin de vermelding in de tekst en Conclusies van het navolgende: a) een individuele semiconductor wafer of - substraat; of b) een al dan niet individuele semiconductor module.Furthermore, the possible application of all semiconductor treatments that are already generally used for wafers in semiconductor modules, including those already described in Patents, if therein the mention in the text and Conclusions of the following: a) an individual semiconductor wafer or - substrate; or b) an individual or non-individual semiconductor module.

10 Verder, dat daarbij de in deze Octrooi-aanvrage omschreven middelen en werkwijzen tevens toepasbaar zijn in deze andere semiconductor tunnel-opstellingen, welke zijn aangegeven en omschreven in deze andere Octrooi-aanvragen van de aanvrager .Furthermore, the means and methods described in this Patent Application are also applicable in these other semiconductor tunnel arrangements, which are indicated and described in these other Patent applications of the applicant.

10371911037191

Claims

1. A semiconductor tunnel arrangement which is designed such that it comprises means such that, in its upper tunnel block, it accommodates a number of strip-shaped devices, which typically extend transversely of its central top semiconductor treatment portion for the purpose of during the its effect, thereby continuously effecting a layer of particles of a solid semiconductor substance that is at least nanometer high on the successive, continuously moving semiconductor substrate portions therethrough.

2. Tunnel arrangement according to Claim 1, characterized in that it is further designed and comprises means such that the use of typically less than 10 nanometer large particles of such a semiconductor substance is involved.

3. Tunnel arrangement according to Claim 2, characterized in that such particles consist of a metal substance.

Tunnel arrangement according to Claim 2, characterized in that such particles consist of a dielectric substance.

5. Tunnel arrangement according to one of the preceding

Claims, characterized in that it is further embodied such that it comprises means such that, above the upper tunnel block thereof, the accommodation of a device for the purpose therein of producing such particles of a solid semiconductor substance and wherein a strip-shaped mixing device for mixing these particles with typically a higher percentage of an evaporable liquid carrier medium which is also continuously supplied therein.

6. Tunnel arrangement as claimed in claim 5, characterized in that it is further designed such that it comprises means such that the use therein of a subsequent mixing device typically located below this first mixing device for the purpose of 1037191 continuously supplied, typically also vaporizable, low boiling liquid carrier medium with a considerably higher percentage thereof.

7. Tunnel arrangement as claimed in claim 6, characterized in that it is further designed such that it comprises means such that, for this purpose, the inclusion in the upper tunnel block thereof of a strip-shaped medium supply device in which the uninterrupted supply of the combination of liquid carrier medium and particles of a solid semiconductor substance and wherein, in the upper part thereof, the accommodation of typically a cylindrical mixing device, comprising a rotating camshaft arrangement for mixing a low percentage of at least co such particles with a high percentage of liquid carrier medium, which is thereby typically the same as the first carrier medium.

8. Tunnel arrangement as claimed in claim 7, characterized in that it is further designed such that it comprises means such that this mixing device is connected at its bottom via typically a number of adjacent medium discharge channels to a second, also typically cylindrical mixing device, including also the incorporation of such a rotary camshaft arrangement and the continuous supply of a considerably higher percentage of typically the same liquid carrier medium for the purpose of discharging this combination of carrier medium downwardly and such particles of this semiconductor solid substance via a large number of adjacent channels to the underlying strip-shaped supply portion of the upper slit of this tunnel arrangement above the semiconductor substrate portions which are also continuously interrupted during the operation of this tunnel arrangement .

9. Tunnel arrangement according to one of the preceding

Claims, characterized in that it is further embodied such that it comprises means such that an interchangeable strip-shaped vibrator / heating device included in its upper tunnel block behind such a medium supply device, with in its compartment the accommodation of a strip-like device for typically vaporizing the low-boiling liquid carrier medium therewith with a vibrating precipitate of these particles on the subsequent semiconductor substrate portions moving continuously underneath it, and wherein via an intermediate portion of said upper gap with a increasing its height, a continuous discharge of the vaporous medium formed takes place to a subsequent strip-shaped discharge section of this upper tunnel block.

10. Tunnel arrangement as claimed in claim 9, characterized in that it is further designed such that it comprises means such that the vibrating condition of such a vibrating / heating device is thereby maintained under a determined, advantageously profiling of the vibrations generated by it.

11. Tunnel arrangement as claimed in claim 10, characterized in that it is further designed such that it comprises means for depositing at least almost exclusively these particles of solid substance on these successive substrate portions at the location of such a vibration / heating device takes place.

12. Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is furthermore designed and comprising means such that the precipitation of the particles of this solid substance and liquid carrier medium takes place thereby on the subsequent semiconductor substrate portions that are co-displaced by a continuous metal band moving through it, and thereby a decreasing height of this combination of this carrier medium and particles.

Tunnel arrangement according to Claim 11, characterized in that it is further designed in such a way that containing at least almost exclusively these particles of the solid substance are deposited on a liquid bond, which may or may not be temporary Substance applied to a metal substrate in a previous tunnel section.

Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further embodied such that it comprises means that precipitation of at least almost exclusively these particles of the solid substance takes place on the nanometer high layer of a liquid adhesive substance applied in a preceding tunnel section to a dielectric top layer of the subsequent semiconductor substrate sections moving therethrough.

15. Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed and comprising such means that such a precipitation of these particles of a solid substance takes place on a nanometer-high layer of a liquid adhesive substance which has been applied in a preceding tunnel section to a plastic top layer of the subsequent semiconductor substrate sections.

Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed and comprising means such that, behind such a strip-shaped discharge device for evaporated liquid carrier medium, the inclusion in the upper tunnel block of a strip-shaped supply device for typical liquid cleaning medium, including its discharge via this discharge device for the purpose of cleaning / keeping the intermediate lower wall part of the upper tunnel block, as it may have also occurred there from a limited precipitation of such particles on this bottom wall section.

17. Tunnel arrangement as claimed in claim 16, characterized in that it is further designed such that it comprises means such that, behind this feed device for cleaning medium, the accommodation of a strip-shaped feed device for continuous use supplying gaseous medium, including its discharge via this discharge device for the purpose of also maintaining such a clean condition of also the intermediate lower wall part of this block and also its functioning as a closing medium.

18. Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further embodied such and comprising means such that, behind such a first vibration / heating device, the inclusion of a second vibration / heating device in this upper tunnel block for the purpose of typically with the vibration thereof the occurrence of a leveling process of this applied layer of such particles of a solid substance.

Tunnel arrangement according to Claim 18, characterized in that it is further embodied such that it comprises means such that maintaining a minimum, micron height of the subsequent upper slit portions under such a device for such a 15 equalization process.

20. Tunnel arrangement according to Claim 18 or 19, characterized in that it is further designed and comprises means such that, again behind such a subsequent strip-shaped discharge section in the upper tunnel block, for at least partly evaporated liquid carrier medium again accommodates therein such a strip-shaped supply device for cleaning medium and the subsequent strip-shaped supply device for gaseous lock medium.

21. Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed such that it comprises means such that, for such a strip-shaped vibrator / evaporator, the use of a strip-shaped transducer arrangement with which it is arranged therein maintaining a sufficiently high vibration and heating condition for the purpose of vaporizing such a low-boiling liquid carrier medium.

22. Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further embodied such and comprising means such that the use of a rotating camshaft arrangement and a rotary camshaft arrangement for such a strip-shaped vibrator / evaporator included heating device for the purpose of also maintaining typically a rapid downward displacement and a subsequent slow upward displacement of its strip-shaped pressure wall portion for the purpose of also achieving such an optimally flat condition of the deposited particles of such a solid substance and in which, in this pressure wall section, the inclusion of a thin-walled strip-shaped electric heating device for the purpose of thereby also evaporating the liquid carrier medium supplied therewith under the continuous occurrence of such a precipitation process of this particles, with the final build up v a layer of these particles on the subsequent semiconductor substrate portions moving underneath.

23. Tunnel arrangement as claimed in any of the foregoing claims, characterized in that it is further designed such that it comprises means such that the inclusion of a rotating lower camshaft arrangement in such a tunnel in its sub-tunnel block heating device, which is incorporated in the upper tunnel block, for the continuous up and downward movement of the strip-shaped pressure wall portion thereof and therewith of the subsequent semiconductor substrate portions moving thereabove.

Tunnel arrangement according to Claim 23, characterized in that it is further designed and comprises means such that, as is the case, this camshaft arrangement comprises a number of consecutive cams, which typically consist of a relatively short section and a relatively long portion, and where during its rotation with the aid of these successive cams a subsequent up and down movement of this pressure wall part takes place, thereby maintaining a rapid upward and a subsequent slow downward movement thereof and also with the aid of this pressure wall part continuously moving up and down the continuous semiconductor substrate parts moving along it.

Tunnel arrangement according to Claim 24, characterized in that it is further designed and comprises means such that the upper tunnel block thereof also accommodates a strip-shaped vibration / heating device and the vibrations thereof are typically rapid have downward and a subsequent slow upward displacement.

Tunnel arrangement according to Claim 25, characterized in that it is further designed and comprises means such that, as at least partly in its upper tunnel block, the inclusion of a strip-shaped vibration / heating device for co-optimum rapid filling of the typically less than 40 nanometer wide recesses / crevices in a preceding tunnel section in the dielectric upper layer of these successive sub-moving semiconductor substrate sections, thereby successively achieving a maximum realized height of the intermediate upper gap portion and a subsequent minimum realized height thereof during such vibrating conditions of both this lower camshaft arrangement and this upper vibrating / heating device.

27. Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further embodied such and comprising means such that in the upper tunnel block thereof the accommodation of a strip-shaped medium-supply device for the purpose of placing it in the upper part thereof the continuous mixing of the supplied combination of particles of a semiconductor substance with a high percentage of low-boiling liquid carrier medium and in the lower part thereof the continuous mixing of this combination with a high percentage of high-boiling liquid carrier medium.

28. Tunnel arrangement according to Claim 27, characterized in that it is further designed and comprises means such that, in subsequent strip-shaped sections thereof, a first strip-shaped transducer arrangement for the uninterrupted occurrence thereof takes place in the upper tunnel block. evaporation of the low-boiling liquid carrier medium and, under the subsequent second transducer arrangement, the evaporation of the higher-boiling liquid carrier medium with, if necessary, behind such a strip-shaped discharge device for the evaporated liquid carrier medium again such a strip-shaped feed device for cleaning medium and the subsequent feed device for gaseous lock medium for keeping the subsequent bottom wall portion of this upper tunnel block cleaned.

29. Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed such that it comprises means such that behind such a strip-shaped discharge section in this upper tunnel block the accommodation of a strip-shaped electric heating element is provided. for melting such particles of a solid substance therewith thereby forming a liquid layer thereof and thereafter receiving a strip-shaped cooling device for forming a solid layer thereof.

Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further embodied such that an increased starting portion of the upper gap immediately behind the strip-shaped medium supply portion of this medium supply device and wherein the Subsequent portions of the upper slit include at least partly such a vibrating / heating device a sharply increasing height thereof.

Tunnel arrangement according to Claim 26, characterized in that it is furthermore designed and comprising means such that, after filling these crevices with such particles of a metal substance in a strip-shaped part thereof at least by means of such a subsequent strip-shaped electric heating device, an effected filling thereof with this substance in a liquid form thereof.

Tunnel arrangement according to Claim 31, characterized in that it is further designed and comprises means such that the inclusion of a strip-shaped cooling section of this block behind this electric heating device in the upper tunnel block forming therewith a solid metal layer while at least being filled with these crevices.

Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is furthermore designed and comprising such means that behind these two transducer arrangements in the upper tunnel block there is also the accommodation of a third vibration / heating device for the purpose of the subsequent occurrence of an equalization process of this applied layer of particles of such a solid substance, and this for the purpose of such an uninterrupted heating process taking place in the subsequent tunnel sections with the aid of such an electric heating device for forming a liquid layer of this solid substance, and in the subsequent cooling device a cooling process of this liquid layer takes place to form a solid layer thereof. 20 34; Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further embodied such and comprises means such that, as in the entrance side thereof, the uninterrupted occurrence of the supply of a plastic film, thereby building up on its upper layer of such a number of semiconductor layers that near its exit in its dielectric top layer, such metal-filled crevices are effected that in a device behind its exit by dividing the semiconductor 3Ö substrate continuously supplied therein parts the realization of semiconductor chips with a plastic bottom layer.

Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed and comprising means such that, as in its entrance side 35, the uninterrupted occurrence of the supply of a metal foil, thereby on its upper layer the construction of such a number of semiconductor layers that, near its exit in its dielectric upper layer, such metal-filled crevices are achieved that in a device behind its exit by dividing the semiconductor that is typically continuously supplied therein substrate portions effecting semiconductor chips with a metal bottom layer thereof.

36. Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further embodied such and comprising means such that therein also the possible application of several of the means of the semiconductor facility, - installation, - tunnel. arrangements and devices which are laid down in the Dutch Patent Applications submitted simultaneously with this patent application and recently filed by the applicant concerning such a semiconductor tunnel arrangement.

Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is furthermore designed and comprising such means that therein the possible application of all semiconductor treatments that are already generally used for wafers in semiconductor modules, including those already used. are described in Patents, if therein the mention in the text and Conclusions of the following: already an individual semiconductor wafer or substrate; or b an individual or non-individual semiconductor processing module.

Tunnel arrangement as claimed in any of the foregoing Claims, characterized in that it is further designed and comprising means such that the means and methods described in this Patent Application can also be applied in these other semiconductor tunnel arrangements, which are indicated and described in these other Patent Applications of the applicant.

39. A method of a semiconductor tunnel arrangement, characterized in that, as in its upper tunnel block, the accommodation of a number of strip-shaped devices, which typically extend transversely of its central superimposed semiconductor treatment portion, during operation. thereby continuously effecting a layer of particles of a solid semiconductor substance that is at least nanometer high on the successive, continuously moving semiconductor substrate portions therethrough.

40. A method according to Claim 39, characterized in that such a layer build-up takes place with the use of nanometer-sized particles of such a semiconductor substance.

Method according to Claim 40, characterized in that the use of particles of a metal substance is involved.

The method according to claim 40, characterized in that the use of particles of a dielectric substance is used.

43. A method according to any one of the preceding claims, characterized in that, as in this tunnel arrangement, above its upper tunnel block, the accommodation of a device for the purpose therein of producing such particles of a solid semiconductor substance, thereby located in an underlying strip-shaped mixing device the continuous mixing of these particles takes place with typically a higher percentage of an evaporable liquid carrier medium which is also continuously supplied therein.

44. A method as claimed in Claim 43, characterized in that, as in this device, the use of a following mixing device, typically located below this first mixing device, has an uninterrupted supply of likewise evaporable low-boiling liquid carrier medium with a considerably higher percentage.

45. A method as claimed in any one of the preceding Claims, characterized in that, as for this purpose, in the upper tunnel block of this tunnel arrangement the accommodation of a strip-shaped medium supply device takes place therein, without interruption, of the combination of liquid carrier medium and particles of such a solid semiconductor substance and thereby incorporating therein in the upper part thereof typically a cylindrical mixer, containing a rotating mini camshaft arrangement, with mixing therein this combination of such particles and liquid carrier medium with a high percentage of liquid carrier medium, which is thereby typically the same as this first carrier medium.

A method according to Claim 35, characterized in that like this mixing device is connected on its underside via typically a number of adjacent medium discharge channels to a second, likewise typically cylindrical mixing device, also containing therein the incorporation of such a rotary camshaft arrangement and the continuous supply therein of a substantially higher percentage of typically the same liquid carrier medium, thereby discharging downwardly this combination of carrier medium and such particles of this semiconductor solid substance via a large number of adjacent channels to the underlying strip-shaped supply portion of the upper gap of this tunnel arrangement above the semiconductor substitute portions which are also continuously moving during the operation of this tunnel arrangement.

47. Method as claimed in any of the foregoing claims, characterized in that, as therein behind such a medium supply device, an exchangeable strip-shaped vibration / heating device included in its upper tunnel block, with the accommodation of a strip-shaped device for its purpose in its compartment of typically evaporating the low-boiling liquid carrier medium therewith with a vibrating precipitate of these particles on the successive, continuous-moving semiconductor substrate portions, with an uninterrupted discharge via an intermediate portion of this upper gap with an increasing height thereof of the vaporous medium formed takes place to a subsequent discharge section of this upper tunnel block.

A method according to Claim 47, characterized in that the vibrating condition of such a vibrating / heating device is thereby maintained under a certain, advantageous profiling of the vibrations generated by it.

A method according to Claim 48, characterized in that the deposition of at least substantially exclusively these particles of solid substance takes place on these successive substrate sections at the location of such a vibrating / heating device.

50. A method according to any one of the preceding Claims, characterized in that the precipitation of the solid substance particles and liquid carrier medium takes place on the subsequent semiconductor substrate portions, which are co-displaced by a continuous metal moving through it. tire and such a decreasing height of this combination of this carrier medium and these particles.

A method according to Claim 49, characterized in that the precipitation of at least substantially exclusively these particles of the solid substance takes place on a liquid bonding substance, which may or may not be temporary, which is applied in a preceding tunnel section to a 15 metal bottom layer.

52. A method according to any one of the preceding Claims, characterized in that the precipitation of at least substantially exclusively these particles of the solid substance takes place on the nanometer-high layer of a liquid adhesive substance which is in a preceding tunnel section applied to a dielectric top layer of the subsequent semiconductor substrate portions moving therethrough.

53. A method according to any one of the preceding Claims, characterized in that such a precipitation of these particles of a solid substance takes place on a nanometer-high layer of a liquid adhesive substance which has been applied in a preceding tunnel section to a nanometer-high layer of a liquid adhesive substance, which is applied in a preceding tunnel section to a plastic top layer of the subsequent semiconductor substrate sections.

54. A method according to any one of the preceding claims, characterized in that, as behind such a strip-shaped evaporator liquid carrier medium discharge device, the uptake in the upper tunnel block of a strip-shaped feed device for typical liquid cleaning medium, including its removal via this discharge device, thereby cleaning / keeping the intermediate lower wall part of the upper tunnel block, as it may have also been the case for a limited precipitation of such particles on this lower wall part.

55. A method according to Claim 54, characterized in that, as behind this supply device for cleaning medium, the accommodation of a strip-shaped supply device for the continuous supply of gaseous medium, including its discharge via this discharge device, 10 thereby also maintaining such a clean condition of also the intermediate lower wall part of this block and also its functioning as a closing medium.

56. A method as claimed in any one of the preceding Claims, characterized in that, as behind such a first vibration / heating device, the inclusion of a second vibration / heating device in this upper tunnel block is effected by the vibrating thereof, process of this applied layer of such solid substance particles. 20 57. A method according to Claim 56, characterized in that it maintains a minimum, micron height of the subsequent upper slit portions under such a device for such an equalizing process.

A method according to Claim 56 or 57, characterized in that, as again behind such a subsequent strip-shaped discharge section in the upper tunnel block for at least co-evaporated liquid carrier medium, with the aid of the continuous supply via such a strip-shaped supply device of cleaning medium and the uninterrupted supply of gaseous medium via the subsequent strip-shaped supply device, keeping such an intermediate upper gap portion cleaned.

59. A method according to any one of the preceding Claims, characterized in that, as for such a strip-shaped vibration / evaporation device, the use of a strip-shaped transducer arrangement, maintaining a sufficiently high vibration and heating condition therein for the purpose of evaporation of such a low-boiling liquid carrier medium.

60. A method according to any one of the preceding claims, characterized in that, as for such a strip-shaped vibrator / evaporator, the use of a rotating camshaft arrangement and a heating device incorporated therein, thereby also maintaining typically a fast downward displacement and a subsequent slow upward displacement of the strip-shaped pressure wall portion thereof for the purpose of also achieving such an optimally flat condition of the precipitated particles of such a solid substance and, as in this pressure wall portion thereof, the accommodation of a thin-walled strip-shaped electric heating device, and thereby also the evaporation thereof. the liquid carrier medium which is also supplied underneath under the uninterrupted occurrence of such a deposition process of these particles for the purpose of finally building up a layer of these particles on the subsequent semiconductor substrate sections moving along it.

61. Method as claimed in any of the foregoing Claims, characterized in that, as in the sub-tunnel block, the incorporation of a rotating lower camshaft arrangement under such a vibrating / heating device, which is incorporated in the upper tunnel block, continuously up and down therewith displacement of the strip-shaped pressure wall portion thereof and thereby of the subsequent semiconductor substrate portions moving thereabove.

62. A method according to Claim 61, characterized in that, as this camshaft arrangement comprises a number of consecutive cams, which typically consist of a relatively short part and a relatively long part, while rotating it with the aid of these consecutive cams a subsequent up and down movement of this pressure wall part takes place with maintenance of a rapid upward and a subsequent slow down movement thereof and also with the aid of this pressure wall part the continuous up and down movement of the uninterrupted movement , semiconductor 5 substrate portions moving thereabove.

A method according to Claim 62, characterized in that, as in its upper tunnel block, the accommodation of a strip-shaped vibration / heating device, the vibrations thereof typically have a rapid downward movement and a subsequent slow upward movement.

64. A method according to Claim 63, characterized in that, as at least partly in its upper tunnel block, the inclusion of a strip-shaped vibrator / heating device, thereby thereby optimally quickly filling the effected in a preceding tunnel section, is typically less than 40 nanometer wide recesses / crevices in the dielectric upper layer of these successive semiconductor substrate sections moving alongside it, with subsequent the effect of a maximum height of the intermediate upper gap section and a subsequent effect of a minimum height during such vibrating conditions of both this lower camshaft arrangement and this upper vibrating / heating device.

65. A method according to any one of the preceding Claims, characterized in that, as in its upper tunnel block, the accommodation of a strip-shaped medium supply device, in its upper part therein there is continuous mixing of the supplied combination of particles of a semiconductor substance with a high percentage of low boiling boiling liquid carrier medium and in its lower part the continuous mixing of this combination with a high percentage of higher boiling liquid carrier medium.

66. A method according to claim 65, characterized in that, as in subsequent strip-shaped portions thereof, the incorporation of a first strip-shaped transducer arrangement, the consequent continuous finding of evaporation of the low-boiling liquid carrier medium and below the thereon - following the second transducer arrangement, the evaporation of the higher-boiling liquid carrier medium thereby taking place behind such a strip-shaped discharge device 5 for the evaporated liquid carrier medium and, if necessary, such a strip-shaped supply device for cleaning medium and the subsequent feed device for gaseous lock medium, thereby keeping the subsequent bottom wall portion of this upper tunnel block cleaned.

67. A method according to any one of the preceding Claims, characterized in that, as behind such a strip-shaped drain section in this upper tunnel block, the inclusion of a strip-shaped electric heating element, thereby melting such particles of a solid substance with the formation of a liquid layer thereof and, as behind it, the accommodation of a strip-shaped cooling device, thereby forming a solid layer thereof by cooling this liquid layer.

68. A method according to any one of the preceding Claims, characterized in that, like the use of a raised starting portion of the upper gap immediately behind the strip-shaped medium feed portion of this medium feed device and the subsequent portions of the an upper slit under at least partly such a vibrating / heating device has a strongly increasing height thereof, thereby ensuring an optimum discharge of the evaporated liquid carrier medium.

69. A method according to Claim 68, characterized in that, as after the filling of the processed crevices with such particles of a metal substance at least in part in a strip-shaped part thereof, with the aid of such a strip-shaped subsequent electric heating device an effected filling thereof with this substance in a liquid form thereof.

70. A method according to claim 69, characterized in that, as behind this electric heating device, the inclusion of a strip-shaped cooling section of this block, thereby forming a solid metal layer with it being at least partly filled with these crevices .

71. A method as claimed in any one of the preceding Claims, characterized in that, as behind these two transducer arrangements in the upper tunnel block, the inclusion of a third transducer arrangement, with it once again an equalization process of the applied layer of particles of such a solid substance, and in the subsequent tunnel sections the occurrence of such a continuous heating process with the aid of such an electric heating device to form a liquid layer of this solid substance, and in the subsequent cooling device of a cooling process of this liquid layer to form a solid layer thereof.

72. A method according to any one of the preceding Claims, characterized in that, as in the entrance to this tunnel, the supply of a plastic film takes place uninterruptedly, the top layer thereof taking place the construction of such a number of semiconductor layers, that near its exit in the effected dielectric upper layer thereof, such metal-filled crevices are effected, that in a device behind its exit, by dividing the semiconductor substrate portions continuously supplied therein, effecting semiconductor chips with a plastic bottom layer.

73. Method as claimed in any of the foregoing Claims, characterized in that, as in the entrance side of this tunnel arrangement, the supply of a metal foil takes place uninterruptedly, on the upper layer thereof the construction of such a number of semiconductor layers that after its output in its dielectric upper layer, such metal-filled crevices are realized that in a device behind its output, by dividing the continuously supplied semiconductor substrate portions, the establishment of semiconductor chips having a metal base layer.

74. A method according to any one of the preceding Claims, characterized in that in this tunnel arrangement also the possible application of several of the methods of the semiconductor facility, - installation, - tunnel arrangements and - devices, which on 23 June and 6 July j.1. and currently Dutch Patent Applications filed by the applicant, regarding such a semiconductor tunnel arrangement.

75. A method according to Claim 74, characterized in that the possible application of all semiconductor treatments of wafers in semiconductor modules, also those already described in Patents, is included therein, if there is mention thereof in the text of the document. following: a) an individual semiconductor wafer or substrate; or b) an individual or non-individual semiconductor processing module.

A method according to any one of the preceding Claims, characterized in that the methods described in this Patent Application 20 are also applicable to these other semiconductor tunnel arrangements, which are indicated and described in these other Patent Applications of the applicant. 1037191