JPS60144932A - Molecular beam growth method of compound semiconductor crystal - Google Patents
Molecular beam growth method of compound semiconductor crystalInfo
- Publication number
- JPS60144932A JPS60144932A JP9684A JP9684A JPS60144932A JP S60144932 A JPS60144932 A JP S60144932A JP 9684 A JP9684 A JP 9684A JP 9684 A JP9684 A JP 9684A JP S60144932 A JPS60144932 A JP S60144932A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- compound semiconductor
- melting point
- molecular beam
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Abstract
Description
【発明の詳細な説明】
（技術分野）
この発明は化合物半導体結晶の分子線成長方法に関し、
特に基板結晶固定方法に関する。[Detailed Description of the Invention] (Technical Field) This invention relates to a method for molecular beam growth of compound semiconductor crystals,
In particular, it relates to a method for fixing substrate crystals.
（技術的背景）
従来、Ｇａ’Ａｓ ６るいはＩｎＰ等の化合物半導体基
板に分子線により結晶を成長する場合、Ｍｏ等の高融点
金属によシ作られた基板ホルダーに、ＩｎあるいはＧａ
等の低融点金属により基板を融層固定し、加熱して基板
表面側より分子線を照射するこ゛とによシ、結晶を成長
させていた。通常、結晶成長はＩｎ 、 Ｇａ等の低融
点金属の融点よりはるかに高い温度で行なわれ、基板ホ
ルダーと基板の熱膨張の差による基板への応力は、低融
点金属の液体にょシ固定することで解決されていると考
えられていた。しかしながら、基板温度を高くするとＩ
ｎ、Ｇａ等の低融点金属は、ＧａＡｓあるいはＩｎＰ等
の基板と反応してしまい、基板は基板ホルダーに反応物
による固体で固定され応力を受けるため凹凸が生じ、基
板は割れ易くなる欠点があった・
（発明の目的）
本発明の目的は、化合物半導体基板が応力？受けること
のない半導体の分子線結晶成長方法を得ることにある。(Technical background) Conventionally, when growing crystals on a compound semiconductor substrate such as Ga'As6 or InP using molecular beams, a substrate holder made of a high melting point metal such as Mo is
Crystals were grown by fixing the substrate in a molten layer with a low melting point metal such as, heating and irradiating molecular beams from the surface side of the substrate. Normally, crystal growth is performed at a temperature much higher than the melting point of low melting point metals such as In and Ga, and the stress on the substrate due to the difference in thermal expansion between the substrate holder and the substrate is fixed by the liquid of the low melting point metal. was thought to have been resolved. However, if the substrate temperature is increased, I
Low melting point metals such as n, Ga, etc. react with substrates such as GaAs or InP, and the substrate is fixed to the substrate holder as a solid by the reactant and is subjected to stress, resulting in unevenness and the disadvantage that the substrate becomes easily broken. (Objective of the Invention) The object of the present invention is to reduce stress in a compound semiconductor substrate? The object of the present invention is to obtain a method for growing molecular beam crystals of semiconductors that does not suffer from oxidation.
（発明の概要〕
この発明の要点は化合物半導体結晶の分子線成長を行う
際、基板裏面にＷ ｒ Ｍｏ ＋ Ｔａから選ばれた１
金属を含む高融点金属膜を設け、そしてＩｎあるいはＧ
ａ等の低融点金属で、前記化合物半導体基板裏面の高融
点金属膜を基板ホルダーに融着したことにある。(Summary of the Invention) The main point of this invention is that when performing molecular beam growth of a compound semiconductor crystal, 1 selected from W r Mo + Ta is formed on the back surface of the substrate.
A high melting point metal film containing metal is provided, and In or G
The high melting point metal film on the back surface of the compound semiconductor substrate is fused to the substrate holder using a low melting point metal such as a.
（実施例）
図は本発明の実施例を示す説明図であシ、以下図面に沿
って説明する。この実施例では、基板ｌとしては、Ｇａ
Ａｓヲ用いＧａＡｓ基板１の裏面にはＷ膜２２１ｏｏｏ
Ｌ ス・母ツタ法により形成させる。(Example) The figure is an explanatory diagram showing an example of the present invention, and the following description will be made along the drawing. In this example, the substrate l is Ga
A W film 221ooo is on the back surface of the GaAs substrate 1 using Aswo.
L. Formed by the mother vine method.
裏面にＷ膜２がつけられたＧａＡｓ基板ｌ基板層浄、エ
ツチングの後にＭｏからなる基板ホルダー３上に、Ｉｎ
膜４によシ融着する。ＧａＡｓ基板ｌ基板層された基板
ホルダー３は分子線成長装置内に搬送する。After cleaning and etching the GaAs substrate with the W film 2 on the back surface, In is placed on the substrate holder 3 made of Mo.
It is fused to the membrane 4. The substrate holder 3 on which the GaAs substrate is layered is transported into a molecular beam growth apparatus.
結晶の成長は超高真空下で、基板ホルダー３の裏側のヒ
ータ５によシ加熱された基板上に、成長させる構造元素
の分子線を照射し、単結晶薄膜を成長する。この分子線
結晶成長における基板温度は、熱電対６によシ読み取る
ことができる。成長時の基板温度は６６０℃程度である
。ＧａＡｓ基板ｌ基板層のＩｎ膜４は保護膜としては次
の条件を満たす。To grow the crystal, a molecular beam of the structural element to be grown is irradiated onto the substrate heated by the heater 5 on the back side of the substrate holder 3 under an ultra-high vacuum to grow a single crystal thin film. The substrate temperature during this molecular beam crystal growth can be read by a thermocouple 6. The substrate temperature during growth is about 660°C. The In film 4 on the GaAs substrate 1 substrate layer satisfies the following conditions as a protective film.
Ａ） ＧａＡｓ基板の洗浄、エツチング（エツチング液
は４Ｈ２ＳＯ４：ｌＨ２Ｏ２：ｌＨ２Ｏを用いる）に対
して安定である。A) Stable against cleaning and etching of GaAs substrate (4H2SO4:1H2O2:1H2O is used as etching solution).
Ｂ）室温から結晶成長温度までの温度範囲で分解あるい
は融解蒸発しない。B) Does not decompose or melt and evaporate in the temperature range from room temperature to crystal growth temperature.
Ｃ）室温から結晶成長温度までの温度範囲でＧａＡｓ基
板ｌ基板層して膜全体が変質してしまわない。C) The entire film does not change in quality when the GaAs substrate is layered in the temperature range from room temperature to the crystal growth temperature.
Ｄ）室温から結晶成長温度までの温度範囲で、Ｉｎと反
応し膜全体あるいはＩｎ全体が変質してしまわない。D) In the temperature range from room temperature to crystal growth temperature, the entire film or In does not change in quality due to reaction with In.
Ｅ） Ｉｎによシ、室温から結晶成長温度までの温度範
囲でＧａＡｓ基板ｌ基板層できる。E) For In, a GaAs substrate layer can be formed at a temperature range from room temperature to crystal growth temperature.
従ってこの発明によれば、ＧａＡｓ基板の裏面に保護膜
を設けたので、融着に用いるＩｎあるいはＧａとＧａＡ
ｓ基板とが反応するのを防ぐことができる。Therefore, according to this invention, since a protective film is provided on the back surface of the GaAs substrate, the In or Ga used for fusion bonding and the GaAs
Reaction with the s-substrate can be prevented.
更に融着に用いる金属として、ＩｎのみならずＧａやＩ
ｎとＧａとの合金などを用いる事が出来る。Furthermore, as the metal used for fusion bonding, not only In but also Ga and I can be used.
An alloy of n and Ga can be used.
Ｇａ及びＩｎとＧａの合金は融点が室温程度と低くＧａ
Ａｓ基板の基板ホルダーへの融着作業が容易になるばか
シでなく、ＧａやＩｎとＧａとの合金は酸化膜の皮膜が
出来にくいので、’ Ｇ１Ａｓ基板と基板ホルダーヲ密
着よく融着することができる。Ga and alloys of In and Ga have low melting points around room temperature.
Not only does it make it easier to fuse the As substrate to the substrate holder, but it also makes it easier to weld the G1As substrate and substrate holder together, as Ga and alloys of In and Ga are less likely to form an oxide film. can.
なおまた、前記のＡ−Ｅまでの条件は、ＭＯやＴａの高
融点金属も満足するので、Ｗの代シに用いることができ
る。Furthermore, since the conditions A to E described above are also satisfied with high melting point metals such as MO and Ta, they can be used in place of W.
なおＳｉＯ２，Ａｔ２０３，５１３Ｎ４等の高耐熱絶縁
膜、その他の耐熱性材も保護膜としてＷの代シに用いる
ことができるけれども、これらは一般にＩｎやＧａなど
の低融点金属とのぬれ具合が悪く、従って更にＴｉ膜な
どを併合した２層保護膜とする必要があシ、簡易性に欠
ける。Note that high heat-resistant insulating films such as SiO2, At203, and 513N4, and other heat-resistant materials can also be used as protective films in place of W, but these generally have poor wettability with low-melting point metals such as In and Ga. Therefore, it is necessary to form a two-layer protective film including a Ti film or the like, which lacks simplicity.
（発明の効果）
この発明は以上説明したように化合物半導体基板裏面に
高融点金属膜を設け、基板ホルダーにこの高融点金属膜
を低融点金属を用いて融着し、半導体基板表面側から分
子線を照射して結晶成長を行うようにしたので、基板温
度を上げて成長しても、化合物半導体基板は、変質する
ことのない液汁／７”＋ （＜ ＩＡ占６１ｉｉｊ Ｊ
６Ｐ ｌ−）１ −１１４５−ｂ ｆｉ、 ’ｒ Ｉｆ
１ｆｔ６７ Ｊｎ応力を受けることなく、化合物半導
体基板上に薄膜を成長することができるという利点があ
る。(Effects of the Invention) As explained above, this invention provides a high melting point metal film on the back surface of a compound semiconductor substrate, fuses this high melting point metal film to a substrate holder using a low melting point metal, and then Since crystal growth is performed by irradiation with radiation, the compound semiconductor substrate can be grown without changing its quality even if the substrate temperature is raised.
6P l-)1 -1145-b fi, 'r If
There is an advantage that a thin film can be grown on a compound semiconductor substrate without being subjected to 1ft67 Jn stress.
図は本発明の実施例を示す断面図である。
ｌ・・・ＧａＡｓ基板、２・・・Ｗ膜、３・・・基板ホ
ルダー、４・・・Ｉｎ、５・・・ヒーター、６・・・熱
電対。
特許出願人 沖電気工業株式会社
昭和 年 月 日
特許庁長官 殿
１ 事件の表示
昭和５９年 特 許 願第００００９６号２、発明の名
称
化合物半導体結晶の分子線成長方法
３ 補正をする者
事件との関係 特許出願人
住 所（〒１０５） 東京都港区虎ノ門１丁目７番１２
号４代理人The figure is a sectional view showing an embodiment of the present invention. 1...GaAs substrate, 2...W film, 3...substrate holder, 4...In, 5...heater, 6...thermocouple. Patent Applicant Oki Electric Industry Co., Ltd. Director General of the Patent Office, 1989 1. Indication of Case 1988 Patent Application No. 000096 2. Name of Invention Method for Molecular Beam Growth of Compound Semiconductor Crystal 3. Related patent applicant address (105) 1-7-12 Toranomon, Minato-ku, Tokyo
No. 4 agent
Claims (1)
るグループから選択された高融点金属の膜を形成する工
程と、 低融点金属を用いて前記化合物半導体基板裏面の高融点
金属の膜を基板ホルダーに融着する工程と、 前記化合物半導体基板の表面側から分子線を照射して結
晶成長を行う工程とからなる化合物半導体結晶の分子線
成長方法。[Claims] A step of forming a film of a high melting point metal selected from the group consisting of W, Mo, and Ta on the back surface of a compound semiconductor substrate; A method for growing a compound semiconductor crystal using a molecular beam, the method comprising: fusing a film of the compound semiconductor substrate to a substrate holder; and growing a crystal by irradiating a molecular beam from the surface side of the compound semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9684A JPS60144932A (en) | 1984-01-05 | 1984-01-05 | Molecular beam growth method of compound semiconductor crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9684A JPS60144932A (en) | 1984-01-05 | 1984-01-05 | Molecular beam growth method of compound semiconductor crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60144932A true JPS60144932A (en) | 1985-07-31 |
Family
ID=11464571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9684A Pending JPS60144932A (en) | 1984-01-05 | 1984-01-05 | Molecular beam growth method of compound semiconductor crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60144932A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002319545A (en) * | 2001-04-20 | 2002-10-31 | Mitsubishi Cable Ind Ltd | MANUFACTURING METHOD OF GaN CRYSTAL AND BASE MATERIAL FOR CRYSTAL GROWTH |
| WO2003077311A1 (en) * | 2002-03-14 | 2003-09-18 | Commonwealth Scientific And Industrial Research Organisation | Method and resulting structure for manufacturing semiconductor substrate |
| US6960490B2 (en) | 2002-03-14 | 2005-11-01 | Epitactix Pty Ltd. | Method and resulting structure for manufacturing semiconductor substrates |
-
1984
- 1984-01-05 JP JP9684A patent/JPS60144932A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002319545A (en) * | 2001-04-20 | 2002-10-31 | Mitsubishi Cable Ind Ltd | MANUFACTURING METHOD OF GaN CRYSTAL AND BASE MATERIAL FOR CRYSTAL GROWTH |
| WO2003077311A1 (en) * | 2002-03-14 | 2003-09-18 | Commonwealth Scientific And Industrial Research Organisation | Method and resulting structure for manufacturing semiconductor substrate |
| US6919261B2 (en) | 2002-03-14 | 2005-07-19 | Epitactix Pty Ltd | Method and resulting structure for manufacturing semiconductor substrates |
| US6960490B2 (en) | 2002-03-14 | 2005-11-01 | Epitactix Pty Ltd. | Method and resulting structure for manufacturing semiconductor substrates |
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