JPH0235716B2 - - Google Patents
Info
- Publication number
- JPH0235716B2 JPH0235716B2 JP59143242A JP14324284A JPH0235716B2 JP H0235716 B2 JPH0235716 B2 JP H0235716B2 JP 59143242 A JP59143242 A JP 59143242A JP 14324284 A JP14324284 A JP 14324284A JP H0235716 B2 JPH0235716 B2 JP H0235716B2
- Authority
- JP
- Japan
- Prior art keywords
- germanium
- layer
- boron nitride
- depositing
- dielectric substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052732 germanium Inorganic materials 0.000 claims description 109
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 109
- 239000000758 substrate Substances 0.000 claims description 40
- 229910052582 BN Inorganic materials 0.000 claims description 30
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 30
- 238000002844 melting Methods 0.000 claims description 26
- 230000008018 melting Effects 0.000 claims description 25
- 239000010409 thin film Substances 0.000 claims description 23
- 239000013078 crystal Substances 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 16
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims description 11
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 85
- 239000000126 substance Substances 0.000 description 23
- 239000007787 solid Substances 0.000 description 18
- 239000010408 film Substances 0.000 description 17
- 239000007788 liquid Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 15
- 238000009833 condensation Methods 0.000 description 13
- 230000005494 condensation Effects 0.000 description 13
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 12
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 10
- 229910052721 tungsten Inorganic materials 0.000 description 10
- 239000010937 tungsten Substances 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000004857 zone melting Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000002195 synergetic effect Effects 0.000 description 4
- 238000009736 wetting Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 150000002290 germanium Chemical class 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010406 interfacial reaction Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/08—Germanium
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
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ãã²ã«ãããŠã èèçµæ¶ã®è£œé æ¹æ³ã«é¢ããã[Detailed Description of the Invention] <Industrial Application Field> The present invention relates to a method for manufacturing germanium thin film crystals, and in particular to manufacturing germanium thin film crystals for use in semiconductor devices such as light emitting diodes, optical composite devices, and monolithic multifunctional integrated circuits. Regarding the method.
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ãå³å¯ã«å®ããªããã°ãªããªãã<Prior art> Conventionally, in manufacturing this type of germanium thin film crystal, a germanium layer is deposited in advance to a desired thickness on a dielectric substrate such as silicon (silicon surface coated with an oxide film). After that, the germanium layer was crystallized by being melted and solidified by irradiating a laser beam or an electron beam from one side to the other or by a zone melting method using linear heater heating. However, when crystallizing germanium using this method, when only the germanium layer is deposited on the substrate, in the case of heating and melting with a linear heater, the heater temperature, the substrate temperature, and the relative speed (movement) between the beam and the substrate are In the case of heating and melting with an energy beam, the beam power, substrate temperature, relative speed between the beam and the substrate, etc. must be strictly determined.
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åºãé¢ç©ã«ãããçµæ¶åãå°é£ã§ãã€ãã This is because, as shown in Figure 7a, when germanium is dissolved, its adhesion to the substrate (SiO 2 ) is weak, so if the conditions deviate even slightly from the above conditions, sufficient crystal growth will not occur, or, as shown in Figure 7a. This is because germanium condenses and becomes liberated from the substrate as shown in b, and thin film crystallization cannot be achieved. In particular, in a method using a linear heater in which the area of molten germanium during heating crystallization is large, it becomes extremely difficult to crystallize a thin film over the entire substrate surface. In order to prevent such condensation, conventionally, as shown in Fig. 1, a method has been adopted in which layers 1 and 3 of a high-melting point metal such as tungsten are formed above and below a germanium layer 2 and then heated and crystallized. However, although crystallization by such a method is effective in preventing condensation of germanium, as shown in FIG. In order to epitaxially grow the gallium oxide layer 6, after crystallizing the germanium 2, the high melting point metal layer 3 shown in FIG. 1 is removed to expose the germanium layer 2, and then epitaxial growth is performed as shown in FIG. Layer 6 needs to be formed. At present, chemical etching is mainly used to remove the high melting point metal layer 3, but it is difficult to obtain a sufficiently flat surface of the germanium layer 2 after the layer 3 is removed. Therefore, the surface of the epitaxially grown layer 6 is also affected by the surface of the layer 2, making it impossible to obtain a sufficiently flat surface, resulting in the disadvantage that non-uniformity appears in the characteristics of the elements formed on the layer 6. Also, the third
As shown in the figure, a photocoupler element configured to receive an optical signal 8 emitted from a light emitting element 7 formed on a gallium arsenide layer 6 with a light receiving element 9 formed in advance on a substrate uses a high melting point metal that is opaque to the optical signal 8. Due to the existence of layer 1, in order for the optical signal 8 to effectively reach the light receiving element 9, it is necessary to reduce the thickness of layer 1 within a range that is effective for preventing condensation. The power of the arriving light was often insufficient to drive the light receiving element 9. Another method for preventing germanium condensation is to form a SiO 2 B layer 10 with a thickness of about 1 ÎŒm on the germanium layer 2 as shown in FIG. There is a limit to the area of germanium that can prevent condensation.
Crystallization over a wide area was difficult.
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補é æ¹æ³ãæäŸããããšãç®çãšããã<Problems to be Solved> The present invention was made in order to eliminate the above-mentioned drawbacks in the production of germanium thin film crystals. An object of the present invention is to provide a method for producing a germanium thin film crystal that can grow crystals over the entire surface of a substrate with high reproducibility and can produce a germanium thin film crystal with good surface flatness.
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ãã<Means for Solving the Problems> In order to solve the above-mentioned problems, one of the means of the present invention is to apply a material selected from the group consisting of boron nitride, aluminum nitride, beryllium oxide, and silicon carbide on a dielectric substrate. depositing a first layer of germanium on the first layer; depositing a second layer of germanium on the first layer;
depositing a third layer consisting of at least one selected from the group consisting of boron nitride, aluminum nitride, beryllium oxide and silicon carbide on the layer; and depositing the first, second and third layers. The method is characterized by comprising a step of partially heating the dielectric substrate along the entire dielectric substrate or the second layer.
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æ¿ãéšåå ç±ããå·¥çšãšãªãããšãç¹åŸŽãšããã Further, another means of the present invention includes the step of depositing, on the dielectric substrate, a first layer consisting of at least one selected from the group consisting of boron nitride, aluminum nitride, beryllium oxide, and silicon carbide;
depositing a second layer made of germanium on the layer; and depositing a third layer made of a high melting point metal that does not form an alloy with germanium at a temperature near the melting point of germanium on the second layer. and a step of partially heating the dielectric substrate on which the first, second, and third layers are deposited or along the second layer.
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ããå·¥çšãšãªãããšãç¹åŸŽãšãããã®ã§ããã Another means of the present invention is to provide a first layer on a dielectric substrate made of a high melting point metal that does not form an alloy with germanium at a temperature near the melting point of germanium, and a first layer made of germanium on the first layer. depositing a second layer on the second layer; depositing a third layer comprising at least one selected from the group consisting of boron nitride, aluminum nitride, beryllium oxide, and silicon carbide; This method is characterized in that it is a step of heating the entire dielectric substrate on which the first, second, and third layers are deposited or partially heating the dielectric substrate along the second layer.
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ããã<Function> In the method for producing a germanium thin film crystal of the present invention, it is necessary to suppress condensation of germanium and sufficiently crystallize the thin film. For this purpose, it is considered that the following requirements must be satisfied.
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æãããšã Sandwiching the germanium layer between thin films of material with high surface tension (hereinafter referred to as protective films) in the form of a sandwich.
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ãã«ã®ãŒã§èŠå®ãããå€ã«è¿ããªãã In general, when a liquid substance exists on a solid, it is well known whether the liquid substance is in a condensed state, that is, clumped together in a bead shape, or spread out, that is, well wetted on the solid surface. It depends on the magnitude relationship between the surface tension of the solid and the surface tension of the liquid substance. As shown in the inset of FIG. 7, the degree of wetting between the liquid substance 20 and the solid 21 can be evaluated as the contact angle Ξ. It can be said that the larger the contact angle Ξ, the smaller the degree of wetting, and the closer to a bead-like condensed state. In a completely condensed state, the contact angle Ξ is
It becomes 180 degrees. The graph in Figure 7 is the result of measuring the contact angle of germanium on various solid materials, and shows the contact angles of germanium on various solid materials, including boron nitride, aluminum nitride, beryllium oxide, and silicon carbide, which are used as protective films in the present invention, and tungsten, a high melting point metal. has been shown to have greater wettability, that is, less condensation, than other typical dielectrics (SiO 2 ). Considering this qualitatively, a state where condensation is easy and wettability is poor is defined as (1) the area of the exposed part of the surface of the solid 21 is large, and the surface atoms of the solid 21 are not bonded with other substances and are suspended in the air; The state of unbonded surface electrons, that is, the state in which the solid 21 has a unique solid surface energy or surface tension; (2) the liquid substance 20 uses the action of surface tension to minimize its own liquid surface energy per unit area. It is in a state where it maintains a ball-like shape.
Therefore, when the solid surface energy is larger than the liquid surface energy in terms of unit surface area, the area of the exposed part of the surface of the solid 21 is larger than the surface area of the liquid substance as a whole system of solid and liquid substances. The larger the value, the smaller the total energy. That is, this liquid substance becomes condensed. Conversely, a state in which it is difficult to condense and easily wet is a state in which the solid surface energy is larger than the liquid surface energy in terms of unit area, and the exposed area of the surface of the solid 21 does not expand, but the solid The surface of 21 is covered with the liquid substance 20 and bonds between solid and liquid atoms occur, so that the solid surface (interfacial) energy is lower than in the unbonded state, and instead the liquid substance 2
0 spreads, and the energy of the entire system approaches the value defined by the liquid surface energy.
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Due to slight irregularities, etc., the surface is in a different state from the ideal surface, so it becomes completely wet (contact angle Ξ = 0 degrees) and completely condenses (contact angle Ξ = 180 degrees).
degree) is rare. Therefore, in order to sufficiently suppress the actual condensation of germanium,
As shown in the inset of Figure 7, not only one side (lower surface) is brought into contact with the protective film, but also a similar protective film is placed on the upper surface of the germanium before melting, which is the so-called sandwich structure. Therefore, it is considered necessary to increase the contact area.
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匵ä¿æ°ãæããããšã The upper and lower protective layers must have a coefficient of linear expansion similar to that of germanium.
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It is necessary that the linear expansion coefficients of germanium and the protective film are similar values. For this reason, all materials used in the present invention were selected to have low thermal distortion.
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When manufacturing an optical device with a structure similar to the one shown in the figure, it is necessary to make the germanium layer as thin as possible in order to increase the optical coupling efficiency. The synergistic effect of roughness increases significantly, and as a result, the roughness of the top surface of germanium increases.
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ãèãã極å°ã«æããããšãåºæ¥ãã Therefore, instead of using a substance such as boron nitride for both the upper and lower protective layers (Claim 1), it is possible to simply replace one of them with a substance such as boron nitride (Claim 2). and Section 3), since the interfacial reactions between these substances and germanium can be completely ignored, there is no synergistic effect of roughening of both interfaces, and the roughness caused by the reaction between high melting point substances such as tungsten and germanium is minimized. It can be suppressed to
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A 400 nm thick germanium film 2 was deposited at 700° C. by electron beam heating evaporation. After undergoing such processing steps, a 70 nm boron nitride film 12 was formed on the germanium film 2 by chemical vapor deposition using diborane and ammonia as raw material gases at a substrate temperature of 600° C. as shown in FIG. 5A. A sample with the cross-sectional structure shown was obtained.
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çŽ åãåŸãããã Next, the obtained sample is placed on a quartz plate 14 as shown in FIG. Crystallization was carried out at approximately 1200°C and maintained at approximately 770°C.
The germanium layer 2 is locally heated by the linear heater 13, and a portion 15 of the layer 2 directly under the heater 13 becomes molten. Therefore, (arrow C)
By sliding the substrate on the support stand 14 in the direction of the arrow at a speed of about 1 millimeter per second, the germanium melting portion 15 was moved on the substrate, causing zone melting, and the germanium layer 2 was sequentially melted.
It solidified into crystals. At the time of the state shown in FIG. 5B, 17 is a crystallized portion and 18 is an uncrystallized portion. Even in such a situation where part 15 of the germanium layer melts, the boron nitride layers 11 and 12 are stably maintained without any change, and it is possible to suppress the condensation of germanium in the boron nitride layer 15. One of the reasons for this is that boron nitride does not react with germanium near germanium's melting point of 1213°K and does not cause decomposition or evaporation. Another reason is that boron nitride has a high surface tension, so when it comes into contact with molten germanium, it wets the germanium well and keeps it stable in a thin layer. In addition, by forming boron nitride layers above and below the germanium layer,
In addition to increasing the area of the interface between germanium and boron nitride with good adhesion, the mechanically strong boron nitride material also had a synergistic effect, making it possible to create a stable thin film crystal. On the other hand, germanium and boron nitride have approximately the same coefficient of linear thermal expansion (6.8 to 5.7Ã10 -6 /â) at temperatures between the melting point of germanium (1213°K) and room temperature, so they can be used immediately after crystallization. No cracking, peeling, etc. occurred in each layer even during the period from the temperature to room temperature. As stated above, the requirements for functioning sufficiently as a protective film to prevent germanium condensation are (1) not to react with germanium;
(2) It has a large surface tension, (3) It has a coefficient of linear thermal expansion similar to that of germanium, and (4) It has a certain degree of mechanical strength. In addition to boron nitride, aluminum nitride, beryllium oxide, and silicon carbide can be cited as substances that meet the above requirements. Therefore, it goes without saying that a similar effect can be obtained by appropriately combining these substances in addition to those in the above embodiments. In this example, after the crystallization of germanium, the boron nitride layer 12 on the germanium was removed by a reactive etching method using CF 4 gas or C 2 F 6 gas, but the surface of the germanium layer after removal was flat. The epitaxially grown layer of gallium arsenide on germanium was similarly flat and had few crystal defects, resulting in a gallium arsenide light-emitting device with good reproducibility.
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Since it is transparent to the emission wavelength of the gallium arsenide element, the optical signal could effectively reach the silicon substrate 5.
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ã èèçµæ¶ãããããšãã§ããã In addition, as shown in Fig. 6, a germanium layer 2 with a thickness of 400 nm was formed by electron beam heating evaporation.
A sample with a laminated structure consisting of an aluminum nitride layer 19 with a thickness of about 50 nm formed on the top by a sputtering method using argon gas at 10 -2 Torr, and a tungsten layer 1 with a thickness of about 50 nm formed on the bottom by electron beam heating evaporation. When crystallized using the same zone melting method as in the above example, a germanium thin film crystal with good surface flatness could be obtained.
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質ã«é©çšå¯èœã§ããã In this example, a tungsten layer 1 is present below the germanium layer 2, which layer 1 can be used as an electrode for a device in germanium or even gallium arsenide. Further, depending on the purpose, a structure may be adopted in which a tungsten layer is formed on the germanium layer and an aluminum nitride layer is formed below.
It goes without saying that various changes and improvements can be made in addition to these embodiments without departing from the spirit of the invention. The substrate material is not limited to thermally oxidized silicon, but can be applied to a wide range of materials.
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ãŠãããã In the above examples, the sample with the laminated structure shown in FIG. 5A and the laminated structure shown in FIG.
An example of crystallizing the germanium layer using the zone melting method shown in FIG. It may be crystallized by rapidly raising the temperature to 1000°C, which is higher than the melting point of 986°C, and then cooling it.
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ã®ã¿ã§æ§æããã°ããã<Effects of the Invention> As is clear from the above description, a structure consisting of a first layer made of boron nitride or the like, a second layer made of germanium, and a third layer made of boron nitride or the like can be formed on a desired substrate. After crystallizing germanium, a layer of boron nitride or the like on the germanium is removed by chemical etching or dry etching to obtain a semiconductor substrate having a flat germanium crystal on the surface. Furthermore, if one of the first or third layers is made of a high melting point metal such as tungsten depending on the purpose, this layer can be used as an electrode of the device. Also, if you want to create a structure that avoids contact between germanium and conductive substances,
The first and third layers may be composed only of an insulating material such as boron nitride.
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ã§ããã On the other hand, when coupling an element formed in a substrate with an element formed on gallium arsenide on germanium using optical signals, it is easy to achieve the purpose by selecting an appropriate configuration considering the transparency of the layer. It can be achieved.
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ãããã As an application of the present invention, by using gallium arsenide grown on a germanium layer, inexpensive gallium arsenide solar cells can be manufactured. Furthermore, a monolithic photocoupler device can be realized by combining a gallium arsenide light emitting device and a light receiving muntin in the silicon substrate. Furthermore, it has the advantage that it can be used to create monolithic multifunctional integrated circuits that combine opto-electronic integrated circuits in gallium arsenide and silicon.
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1 to 4 are explanatory diagrams showing the laminated structure of germanium thin films melted and heated in the conventional germanium thin film crystal production method, and FIG. 5A is melted and heated in the germanium thin film crystal production method of the present invention. An explanatory diagram of the laminated structure of one embodiment of a germanium thin film, FIG. 5B is an explanatory diagram showing a zone melting method for a germanium thin film having the laminated configuration of FIG. 5A, and FIG. 6 is a method for producing a germanium thin film crystal of the present invention. FIG. 7a is an explanatory diagram of molten germanium, FIG. 7b is an explanatory diagram showing condensation of germanium by heating, and FIG. FIG. 9 is a graph showing the relationship between the ionicity and cohesive energy of various substances. In the drawings, 1, 3...Tungsten (high melting point metal) layer, 2...Germanium layer, 4...Silicon oxide film substrate, 5...Silicon film substrate, 6...Gallium arsenide epitaxial layer, 11, 12 ...Boron nitride film, 13 ... Linear heater (carbon), 15
... Melted portion of germanium layer, 17... Crystallized portion, 18... Uncrystallized portion, 19... Aluminum nitride layer.
Claims (1)
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é æ¹æ³ã[Claims] 1. A step of depositing on a dielectric substrate a first layer consisting of at least one selected from the group consisting of boron nitride, aluminum nitride, beryllium oxide, and silicon carbide; depositing a second layer of germanium on the second layer; and depositing a third layer of at least one selected from the group consisting of boron nitride, aluminum nitride, beryllium oxide, and silicon carbide on the second layer. a step of causing
A method for producing a germanium thin film crystal, comprising the step of heating the entire dielectric substrate on which the first, second and third layers are deposited or partially heating the dielectric substrate along the second layer. 2 depositing a first layer made of at least one selected from the group consisting of boron nitride, aluminum nitride, beryllium oxide, and silicon carbide on a dielectric substrate; depositing a first layer made of germanium on the first layer; a third layer made of a high melting point metal that does not form an alloy with germanium at a temperature near the melting point of germanium on the second layer;
and partially heating the dielectric substrate along the entire or second layer on which the first, second and third layers are deposited. A method for producing germanium thin film crystals. 3 Depositing a first layer made of a high melting point metal that does not form an alloy with germanium at a temperature near the melting point of germanium on a dielectric substrate, and depositing a second layer made of germanium on the first layer. a third layer comprising at least one selected from the group consisting of boron nitride, aluminum nitride, beryllium oxide and silicon carbide on the second layer;
and partially heating the dielectric substrate along the entire or second layer on which the first, second and third layers are deposited. A method for producing germanium thin film crystals.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59143242A JPS6126598A (en) | 1984-07-12 | 1984-07-12 | Preparation of germanium thin film crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59143242A JPS6126598A (en) | 1984-07-12 | 1984-07-12 | Preparation of germanium thin film crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6126598A JPS6126598A (en) | 1986-02-05 |
JPH0235716B2 true JPH0235716B2 (en) | 1990-08-13 |
Family
ID=15334199
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59143242A Granted JPS6126598A (en) | 1984-07-12 | 1984-07-12 | Preparation of germanium thin film crystal |
Country Status (1)
Country | Link |
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JP (1) | JPS6126598A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH065903B2 (en) * | 1987-06-24 | 1994-01-19 | æ ªåŒäŒç€Ÿã¡ãã£ã¢ | Matrix switcher with input / output combination pattern preset, storage and switching functions |
CN102916039B (en) * | 2012-10-19 | 2016-01-20 | æž åå€§åŠ | There is the semiconductor structure of beryllium oxide |
-
1984
- 1984-07-12 JP JP59143242A patent/JPS6126598A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6126598A (en) | 1986-02-05 |
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