JP3639774B2 - Manufacturing method of image forming apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to the production how the image forming apparatus.
[0002]
[Prior art]
Conventionally, two types of electron-emitting devices using a thermionic electron-emitting device and a cold cathode electron-emitting device are known. Cold cathode electron-emitting devices include field emission type (hereinafter referred to as FE type), metal / insulating layer / metal type (hereinafter referred to as MIM type), surface conduction type electron emitting device, and the like.
[0003]
Examples of the FE type include: P. Dyke & W. W. Dolan, “Field Emission”, Advance in Electron Physics, 8, 89 (1956) or C.I. A. Spindt, “PHYSICAL Properties of Thin-Film Field Emission Catalysts with Mollybdenum Cones”, J. Am. Appl. Phys. 47, 5248 (1976), etc. are known.
[0004]
Examples of the MIM type include C.I. A. Mead, “Operation of Tunnel-Emission Devices”, J. Am. Appl. Phys. , 32, 646 (1961), etc. are known.
[0005]
Examples of the surface conduction electron-emitting device type include M.I. I. Elinson, Radio Eng. Electron Phys. , 10, 1290 (1965) and the like.
[0006]
The surface conduction electron-emitting device utilizes a phenomenon in which electron emission occurs when a current flows in parallel to a film surface of a small-area thin film formed on a substrate. As this surface conduction electron-emitting device, one using an SnO ₂ thin film by Erinson et al., One using an Au thin film [G. Dittmer: “Thin Solis Films,” 9,317 (1972)], using an In ₂ O ₃ / SnO ₂ thin film [M. Hartwell and C.H. G. Fonstad: “IEEE Trans. ED Conf.”, 519 (1975)], carbon thin film [Hisa Araki et al .: Vacuum, Vol. 26, No. 1, p. 22 (1983)] and the like have been reported.
[0007]
As a typical device configuration of these surface conduction electron-emitting devices, the above-described M.I. The element structure of Hartwell is schematically shown in FIG. In FIG. 7, 71 is a substrate, 72 and 73 are element electrodes, and 74 is a conductive film, which is made of a metal oxide thin film formed by sputtering in an H-shaped pattern, and is referred to as energization forming described later. Thereby, the electron emission part 75 is formed. The element electrode interval L in the figure is set to 0.5 to 1 mm, and W ′ is set to 0.1 mm.
[0008]
Conventionally, in these surface conduction electron-emitting devices, it is common to form the electron-emitting portion 75 in advance by conducting a current process called current-forming before conducting the electron emission. That is, energization forming means applying a DC voltage or a very slow rising voltage, for example, about 1 V / min, to both ends of the conductive thin film 74 to locally destroy, deform or alter the conductive thin film, It is to form the electron emission portion 75 in an electrically high resistance state.
[0009]
In the electron emission portion 75, a crack is generated in a part of the conductive film 74, and electrons are emitted from the vicinity of the crack. The surface conduction electron-emitting device subjected to the energization forming process emits electrons from the above-described electron-emitting portion 75 by applying a voltage to the conductive thin film 74 and causing a current to flow through the device.
[0010]
In the surface conduction electron-emitting device, carbon or / or a compound thereof is formed in the electron emission portion of the surface conduction electron-emitting device by a novel manufacturing method called an activation step, thereby improving electron emission characteristics. A proposal (Japanese Patent Laid-Open No. 7-235255) for remarkably improving has been made.
[0011]
Here, the activation step refers to a method for manufacturing the surface conduction electron-emitting device, in which a device in which a pair of electrodes and a conductive film is formed is placed in a vacuum atmosphere, a forming step is performed, and then a vacuum is formed. In this step, an organic material gas containing carbon is introduced into the atmosphere, and a pulse voltage appropriately selected is applied to the element for several minutes to several tens of minutes. This step is a step in which the characteristics of the electron-emitting device, that is, the electron emission current Ie is remarkably increased and improved while having a threshold value with respect to the voltage.
[0012]
[Problems to be solved by the invention]
However, the conventional image forming apparatus using the electron-emitting device may cause the following problems.
(1) In a large image forming apparatus, an electron source substrate (rear plate) on which a plurality of electron-emitting devices are formed and a face plate on which a phosphor or the like is formed are positioned so as to maintain a desired relative position, After being temporarily fixed by combining at a predetermined distance of several millimeters or less, the temperature is raised to a temperature at which an adhesive member such as frit glass is softened and pressed to form a vacuum envelope (this process is heated) (Referred to as the sealing step), since the distance between the electron source substrate and the face plate is small and the conductance to the gas is small, a sufficient vacuum is provided via the exhaust pipe in the exhausting step in the image forming apparatus following the sealing step. It takes time to evacuate to a certain degree, or if the evacuation process is completed in a short time, the degree of vacuum in the apparatus is poor or pressure unevenness occurs, resulting in stable electron emission characteristics. In some cases, the degree of vacuum required for the property could not be obtained.
[0013]
In addition, the relative arrangement between the electron-emitting device and the phosphor is required to have high positional accuracy in order to prevent color misregistration, etc., but due to thermal misalignment in the sealing process or misalignment due to softening of the frit glass used for sealing. In some cases, the required position accuracy could not be obtained. Japanese Patent Laid-Open No. 6-199604 discloses a method in which a low melting point rod glass is used as a material sealed in a vacuum and is introduced into a vacuum apparatus in a superposed manner. Even in this case, a deviation due to frit melting is avoided. I can't.
[0014]
Further, when the electron-emitting device used in the image forming apparatus is a surface conduction electron-emitting device, the face plate is used in introducing gas into the vacuum envelope accompanying the activation process of the surface-conduction electron-emitting device. Since the gas is introduced through the exhaust pipe into the vacuum envelope bonded with the gap between the rear plate and the rear plate kept at several mm or less, the conductance of the exhaust pipe and the vacuum envelope to the gas is small, There was a problem in manufacturing such that it was difficult to obtain a constant pressure over the entire region of the container (vacuum envelope), and it took a long time to become constant.
[0015]
(2) In the surface conduction electron-emitting device, after performing the activation process, the activation process is applied to a substrate of an electron source or a member constituting an image forming apparatus, for example, a face plate having a phosphor. Gas, water, oxygen, CO, CO ₂ , hydrogen, etc. are adsorbed, and it is necessary to remove the adsorbed gas, etc. in order to stabilize the electron emission characteristics and prevent discharge due to the remaining gas. For this purpose, after the sealing step, a step of exhausting through the exhaust pipe while baking the vacuum envelope is necessary.
[0016]
However, since this process has a small conductance with respect to the gas in the container and the exhaust pipe, the gas generated from the member cannot be exhausted sufficiently, and stable electron emission characteristics cannot be obtained, resulting in uneven brightness and a decrease in life. There was a case.
[0017]
Further, there has been a demand for a method for manufacturing an image forming apparatus that solves these problems and does not cause recontamination due to re-adsorption of water, oxygen, hydrogen, CO, CO _{2 and the} like on each degassed member.
[0018]
An object of the present invention is to provide a manufacturing how the image forming apparatus above-mentioned problems have been solved.
[0019]
[Means for Solving the Problems]
One of the methods for producing an image forming apparatus of the present invention is to join a first substrate on which a phosphor excitation unit is arranged and a second substrate on which a phosphor emitting light by the phosphor excitation unit is arranged. A method of manufacturing an image forming apparatus sealed via a material,
(1) In the chamber, the first substrate and the second substrate are held in a state where the sealing portion is not in contact, and the chamber is evacuated and the first means is heated by the heating means. A heating step of heating the substrate, the second substrate, and the bonding material;
(2) In a state where the inside of the chamber is evacuated, the first substrate and the second substrate are moved together with the heating unit to bring the sealing portion into contact with the first substrate and the second substrate. Sealing step of sealing the substrate with the bonding material,
Have
The heating of the first substrate and the second substrate by the heating means heats the entire first substrate and the second substrate substantially uniformly.
[0020]
Another method of manufacturing an image forming apparatus according to the present invention includes a first substrate and a second substrate, and the first substrate and the second substrate are disposed to face each other. A method for manufacturing an image forming apparatus, which has an airtight space between the first substrate and the second substrate, and has a phosphor and means for exciting the phosphor in the airtight space. And
(1) The first substrate and the second substrate are held in a state where the sealing portion is not in contact with the chamber, and the chamber is evacuated, and the first substrate and the second substrate are heated by a heating unit. A heating step of heating the second substrate and the bonding material;
(2) After the heating step, in a state where hydrogen is introduced into the chamber, the first substrate or the second substrate is moved together with the heating unit to bring the sealing portion into contact with the first unit. A sealing step of sealing the substrate of 1 and the second substrate through the bonding material,
The heating of the first substrate and the second substrate by the heating means heats the entire first substrate and the second substrate substantially uniformly. It is desirable that the hydrogen partial pressure is 10 ⁻³ mbar or less or 10 ⁻⁷ mbar or more.
[0021]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be specifically described. An example of the manufacturing method of the present invention and a flat image forming apparatus manufacturing apparatus capable of carrying out the same are shown in FIG. In FIG. 1, 10 is a vacuum chamber, 11 is a gas introduction pipe for introducing gas or the like used in an activation process into the vacuum chamber, 12 is an exhaust pipe for evacuation, and 141 is a face including an image display portion. Reference numeral 145 denotes a rear plate on which an electron source is formed, reference numeral 22 denotes a support frame, reference numeral 23 denotes a joining member for connecting 141, 145, and 22, which is a frit glass mainly made of low-melting glass.
[0022]
In FIG. 1, the joining member 23 is formed in advance on the face plate and the rear plate, but may be formed in advance on the joining surface of the support frame 22 to the face plate and the rear plate. In addition, it is desirable to remove organic substances in advance from the frit glass by calcination.
[0023]
30 is a stage that is a position adjusting means for adjusting the position of the festival plate in the X, Y, and θ directions, 31 is a heating plate that is a heating means for heating the face plate, and 32 is a position adjustment of the face plate in the Z direction. It also serves as a mechanism that pressurizes after contacting the face plate, rear plate, and support frame. Reference numeral 33 denotes a stage as position adjusting means for adjusting the position of the rear plate in the X, Y, and θ directions, and reference numeral 34 denotes a heating plate as heating means for heating the rear plate.
[0024]
In FIG. 1, the face plate is installed above the apparatus and the rear plate is installed below the apparatus, but the installation location is not limited to this, and which one is installed above may be appropriately selected. Further, the stages 30 and 33 which are X, Y and θ direction position adjusting means for the face plate and the rear plate are not necessarily required for both the face plate and the rear plate. Moreover, it is preferable to have a heat insulating structure such as a heat insulating material between the heating plate and the stages 30 and 33.
[0025]
The face plate 141 and the rear plate 145 are respectively fixed to the heating plates 31 and 34 by a fixing jig (not shown). At this time, if the electron source uses a surface conduction electron-emitting device, the above-described forming may be performed in advance or in this vacuum chamber. In addition, frit glass is disposed in advance at the locations where the support frame 22 is bonded to the rear plate 145 and the face plate 141.
[0026]
In addition, when constructing a large display panel, an atmospheric pressure resistant structure called a spacer is previously bonded to the face plate side or the electron source side. At the same time, the support frame is bonded to the face plate side or the electron source side. You can leave it. In this way, the face plate and the electron source (rear plate) are fixed to the heating plates 31 and 34, respectively, and the exhaust port 12 is raised while raising the temperature to the vicinity of the softening point of the glass frit at a distance that can secure a sufficient conductance for gas. Evacuate from.
[0027]
If the electron source uses a surface conduction electron-emitting device, the activation gas is introduced with the conductance maintained (the face plate and the rear plate separated from the height of the support frame). After activation, it is preferable to evacuate while raising the temperature to near the softening point of the glass frit in order to avoid the influence of adsorption of the activated gas, etc., and heating is performed with some gas remaining. This is preferable because the face plate, rear plate, support frame and the like are heated uniformly (see FIG. 1A).
[0028]
Fully evacuate and confirm that the water and oxygen generated from the degassing from the members and the glass frit are below the desired values with the chamber atmosphere measurement device. Adjustment of the relative positional relationship between the face plate and the rear plate using the X, Y, θ direction adjustment stage 30 of the face plate, the X, Y, θ direction adjustment stage 33 of the rear plate, or both so as to maintain the positional relationship. The face plate, the rear plate, and the support frame are brought into contact with each other using the face plate Z-direction adjusting mechanism while pressing.
[0029]
After maintaining the temperature while applying pressure for a certain period of time and adjusting the relative position of the face plate and the rear plate, the temperature is lowered with a predetermined temperature profile, and the glass frit is cured and bonded (FIG. 1 (b) )reference). The adjustment of the relative positions of the faceplate and the rear plate is lowered to a desired temperature than the softening point of the glass frit, frit is performed to a state that maintains the fluidity to some extent reluctant such begin to cure.
[0030]
Further, after the glass frit is completely cured by lowering the temperature, the glass frit is gradually cooled to about room temperature and taken out from the vacuum chamber (see FIG. 1C). Here, a surface conduction electron-emitting device is used as the electron-emitting device, but the present invention is not limited to this. The electron-emitting device is preferably applied to the aforementioned cold cathode electron-emitting device such as a field emission type electron-emitting device.
[0031]
Further, when a field emission type electron-emitting device is used as the electron-emitting device, hydrogen is introduced from the gas introduction tube 11 before sealing, and the hydrogen is left in the sealed vacuum vessel to oxidize the emitter. It is possible to suppress the deterioration over time of the electron emission characteristics due to. The partial pressure of hydrogen is preferably about 10 ⁻⁷ to 10 ⁻³ mbar.
[0032]
If the gas introduction tube 11 used for introducing the activation gas is used for introducing a gas for generating plasma, it can be applied to the manufacture of a plasma display panel (PDP). Thus, the manufacturing apparatus if flat type image forming apparatus, as long as any type can be flexibly.
[0033]
【Example】
The present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples.
[0034]
[Example 1]
In the first embodiment of the present invention, an image forming apparatus having the configuration shown in FIG. 6 was produced. In this embodiment, a plurality of surface conduction electron-emitting devices, which are cold cathode electron-emitting devices, are formed on the rear plate as electron-emitting devices, a phosphor is installed on the face plate, and an effective display area is diagonally 15. A color image forming apparatus having an aspect ratio of 3: 4 in inches was produced. First, the image forming apparatus of the present invention will be described with reference to FIG. 6, and then the manufacturing method will be described with reference to FIGS. 2 and 1 showing a manufacturing flow.
[0035]
FIG. 6 is a perspective view of the image forming apparatus used in the embodiment, in which a part of the panel is cut away to show the internal structure. In the figure, 65 is a rear plate, 66 is a support frame, and 67 is a face plate, and 65 to 67 form an airtight container for maintaining the inside of the display panel in a vacuum. When assembling the airtight container, it is necessary to seal it in order to maintain sufficient strength and airtightness for joining the members.
[0036]
On the rear plate 65, N × M surface conduction electron-emitting devices 62 are formed. (N and M are positive integers of 2 or more, and are appropriately set according to the target number of display pixels. For example, in a display device for display of high-definition television, N = 3000, M = 1000. It is desirable to set the above numbers (in this embodiment, N = 333 and M = 250).
[0037]
The N × M surface conduction electron-emitting devices are simply matrix-wired by M row-directional wirings 63 (also referred to as lower wirings) and N column-directional wirings 64 (also referred to as upper wirings). Next, description will be made with reference to FIG. 7A and 7B are schematic views showing the structure of the surface conduction electron-emitting device, where FIG. 7A is a plan view and FIG. 7B is a cross-sectional view. In FIG. 7, 71 is a substrate, 72 and 73 are element electrodes, 74 is a conductive thin film, and 75 is an electron emission portion.
[0038]
By forming the conductive thin film 74 through the device electrodes 72 and 73, the conductive thin film is locally broken, deformed or altered to form an electron emitting portion 75 that is in an electrically high resistance state, Further, in the activation process for remarkably improving the emission current, a voltage is applied to the conductive thin film 74 of the surface conduction electron-emitting device, and a current is passed through the device, whereby electrons are emitted from the electron emission portion 75 described above. (Similar to the disclosed example of Japanese Patent Laid-Open No. 7-235255 described in the prior art).
[0039]
A fluorescent film 68 is formed on the lower surface of the face plate 67. Since this embodiment is a color display device, the phosphor film 68 is coated with phosphors of three primary colors red, green, and blue used in the field of CRT. For example, as shown in FIG. 8A, the phosphors of the respective colors are separately applied in a stripe shape, and a black conductor 81 is provided between the phosphor stripes.
[0040]
The purpose of providing the black conductor 81 is to prevent the display color from shifting even if there is a slight shift in the irradiation position of the electron beam, or to prevent the reflection of external light and prevent the display contrast from deteriorating. In other words, the phosphor film is prevented from being charged up by an electron beam. The black conductor 81 uses graphite as a main component, but other materials may be used as long as they are suitable for the above purpose.
[0041]
In addition, the method of separately applying the phosphors of the three primary colors is not limited to the stripe arrangement shown in FIG. 8A, and for example, a delta arrangement as shown in FIG. It may be an array. When producing a monochrome display panel, a monochromatic phosphor material may be used for the phosphor film 68, and a black conductive material is not necessarily used.
[0042]
Further, a metal back 69 known in the field of CRT is provided on the surface of the fluorescent film 68 on the rear plate side. The purpose of providing the metal back 69 is to improve the light utilization rate by specularly reflecting a part of the light emitted from the fluorescent film 68, to protect the fluorescent film 68 from the collision of negative ions, and the electron beam acceleration voltage. For example, to act as an electrode for applying an electron, or to act as a conductive path for excited electrons in the phosphor film 68. The metal back 69, after the fluorescent film 6 8 formed on the face plate 67, a phosphor layer surface smoothing treatment was formed by the method of vacuum deposition of Al thereon. Note that when a low voltage phosphor material is used for the phosphor film 68, the metal back 69 is not used.
[0043]
Although not used in this embodiment, a transparent electrode made of, for example, ITO is provided between the face plate substrate 67 and the fluorescent film 68 for the purpose of applying an acceleration voltage and improving the conductivity of the fluorescent film. May be.
[0044]
Dx1 to Dxm, Dy1 to Dyn /, and Hv are electrical connection terminals of an airtight structure provided to electrically connect the display panel and an electric circuit (not shown). Dx1 to Dxm are electrically connected to the row direction wiring 63 of the multi electron beam source, Dy1 to Dyn are electrically connected to the column direction wiring 64 of the multi electron beam source, and Hv is electrically connected to the metal back 69 of the face plate.
[0045]
The basic configuration of the image forming apparatus to which the manufacturing method of the present invention is applied has been described above. Next, the manufacturing method of the image forming apparatus of the present invention will be described with reference to FIGS.
[0046]
(Create rear plate)
(R-1) The blue plate glass was washed, and the lower wiring was formed by screen printing on the rear plate on which the silicon oxide film was formed by sputtering. Next, an interlayer insulating layer is formed between the lower wiring and the upper wiring. Furthermore, an upper wiring was formed. Next, element electrodes connected to the lower wiring and the upper wiring were formed.
[0047]
(R-2) Next, a conductive thin film made of PdO was formed by sputtering and then patterned to obtain a desired form.
[0048]
(R-3) A frit glass for fixing the support frame was formed at a desired position by printing.
Through the above steps, a rear plate on which a surface conduction electron-emitting device with a simple matrix wiring, an adhesive for a support frame, and the like were formed was prepared.
[0049]
(Create face plate)
(F-1) A phosphor and a black conductor were formed on a blue glass substrate by a printing method. The surface on the inner surface side of the fluorescent film was smoothed, and then Al was deposited by vacuum evaporation or the like to form a metal back.
[0050]
(F-2) A frit glass for fixing the support frame was formed at a desired position by printing.
Through the above steps, a phosphor in which three primary color phosphors are arranged in stripes, an adhesive for a support frame, and the like were formed on the face plate.
[0051]
(FR-1) Then, the face plate was prepared by the above process, is introduced into the vacuum chamber of the rear plate and manufacturing apparatus support frame, after each fixed to the heating plate 31 and 34, and subjected to vacuum evacuation (See FIG. 1 (a)).
[0052]
(FR-2) After reaching a sufficient degree of vacuum, a voltage was applied to the electron-emitting devices through the container outer terminals Dxo1 to Doxm and Doy1 to Doyn, and the conductive thin film 4 was subjected to a forming process. Thereafter, 10 ⁻⁴ Torr of acetone was introduced as an activation gas for activation.
[0053]
(FR-3) The temperature is raised with a predetermined profile while evacuating to the sealing temperature while degassing activated gas adsorbed on the face plate and rear plate, water, oxygen, carbon monoxide, etc. The temperature rose. The sealing temperature at this time is determined by the frit glass used for bonding, and in this case, it was set to 410 ° C.
[0054]
(FR-4) After evacuating to a vacuum level of about 10 ⁻⁷ Torr, the electron source and the face plate are aligned on the X, Y, and θ adjustment stages 30 and 33 while maintaining the sealing temperature. After contacting the electron source, face plate, and support frame and holding the pressurized state for 10 minutes, the temperature is lowered at 3 ° C. per minute, and the alignment is stopped when the temperature is lowered by 10 ° C. from the sealing temperature, Stages 30 and 33 were made free and gradually cooled to room temperature (see FIG. 1 (b)).
[0055]
(FR-5) After cooling to room temperature, it was taken out from the vacuum chamber and subjected to gettering by a high-frequency heating method in order to maintain the degree of vacuum after sealing (see FIG. 1C).
[0056]
In the image forming apparatus manufactured by the manufacturing method of the present invention completed as described above, scanning signals and modulation signals are not shown through the container external terminals Dx1 to Dxm and Dy1 to Dyn. Electrons are emitted by applying each from the signal generating means, and a high voltage of several kV or more is applied to the metal back 69 through the high voltage terminal Hv, the electron beam is accelerated, collides with the fluorescent film 68, and is excited and emitted. The image was displayed. As a result, there was no positional deviation of the electron-emitting devices and the phosphors, and no luminance variation or color mixing due to the positional deviation was observed.
[0057]
[Example 2]
The second embodiment of the present invention is an image forming apparatus using a field emission element which is a kind of cold cathode electron emission element as an electron emission element, and a spacer as an atmospheric pressure resistant member in order to reduce weight. Is installed.
[0058]
First, a field emission device will be described with reference to FIG. 9, and then an image forming apparatus using the field emission device will be described with reference to FIG. In FIG. 9, 131 is a rear plate, 132 is a face pie plate, 133 is a cathode, 134 is a gate electrode, 135 is an insulating layer between the gate and the cathode, 138 is an insulating layer between the gate and the focusing electrode, and 136 is the focusing electrode. is there. In FIG. 10, 141 is a face plate, 143 is a support frame, 145 is a rear plate, and 147 is a spacer.
[0059]
The effective display area of the image forming apparatus has a vertical to horizontal ratio of 3: 4 and a diagonal of 10 inches. The gap between the face plate 141 and the rear plate 145 is 1.5 mm.
Next, the manufacturing method of the image forming apparatus of the present invention will be described with reference to FIG.
[0060]
(Create rear plate)
(R-1) Blue plate glass was washed as a substrate, and the cathode (emitter), gate electrode, wiring, etc. shown in FIG. 9 were prepared by a known method. The cathode material was Mo.
[0061]
(R-2) A frit glass for fixing the support frame was formed at a desired position by printing.
[0062]
Through the above steps, a field emission type emission element and an adhesive for a support frame were formed by simple matrix wiring on the rear plate.
[0063]
(Create face plate)
(F-1) A transparent conductor, a phosphor, and a black conductor were formed on a blue glass substrate by a printing method. The surface on the inner surface side of the fluorescent film was smoothed, and then Al was deposited by vacuum evaporation or the like to form a metal back.
[0064]
(F-2) Using blue plate glass as a substrate, frit glass for fixing the support frame was formed at a desired position by printing. Further, the spacer was bonded to the black conductor with a frit.
Through the above steps, a phosphor in which three primary color phosphors are arranged in stripes, an adhesive for a support frame, a spacer, and the like were formed on the face plate.
[0065]
(FR-1) Next, in the same manner as in Example 1, the face plate, the rear plate, and the support frame were introduced into a vacuum chamber and evacuated.
[0066]
(FR-2) The temperature was raised with a predetermined profile while evacuating, and the temperature was raised to the sealing temperature while degassing water, oxygen, carbon monoxide and the like. The sealing temperature at this time is determined by the frit glass used for adhesion, but in this case, it was set to 410 ° C. (see FIG. 1A).
[0067]
(FR-3) After evacuating to a vacuum of about 10 ⁻⁷ Torr and sealing the vacuum vessel, the partial pressure of hydrogen from the inlet tube 11 is 10 ⁻ in the vacuum chamber so that hydrogen remains inside the vessel. Hydrogen was introduced so as to be ⁵ mbar. Thereafter, while maintaining the sealing temperature, the electron source, the face plate, and the support frame were brought into contact with each other and pressed while adjusting the position of the electron source and the face plate on the adjustment stages of X, Y, and θ shown in 30 and 33. After maintaining the state for 10 minutes, the temperature was lowered at 3 ° C. per minute, and when the temperature was lowered from the sealing temperature by 10 ° C., the alignment was stopped, the stages 30 and 33 were made free and cooled to room temperature (FIG. 1). (See (b)).
[0068]
(FR-4) After cooling to room temperature, it was taken out from the vacuum chamber, and a getter process was performed by a high-frequency heating method in order to maintain the degree of vacuum after sealing (see FIG. 1C).
[0069]
In the image forming apparatus shown in FIG. 10 according to the manufacturing method of the present invention completed as described above, each electron-emitting device is applied by a signal generating means (not shown) through a container external terminal. Electrons were emitted, a high voltage of 2 kV was applied to the metal back through the high-voltage terminal Hv, the electron beam was accelerated, collided with the fluorescent film, and excited and emitted to display an image. As a result, there was no positional deviation of the electron-emitting devices and the phosphors, and no luminance variation or color mixing due to the positional deviation was observed.
[0070]
[Example 3]
Next, an example of an image forming apparatus using a surface conduction electron-emitting device will be described with reference to the process flow chart of FIG. 4 and the apparatus schematic diagram of FIG. First, the apparatus will be described.
[0071]
In Fig 5, the load lock vacuum chamber 10, 42 is a vacuum exhaust system oil-free, 39 cylinders gas used in the activation step, 37 the voltage source used for forming and activation process, 34 denotes a rear plate A heating device, 34 'is a face plate heating device, 30, 33 are rear plate or face plate position fine adjustment mechanisms, 32 is a face plate or rear plate 141 moved in the Z-axis direction, and the face plate and rear plate A mechanism for applying pressure, 36 is a CCD which is a detecting means for observing the position of an alignment pattern (alignment mark) formed on the face plate and the rear plate, and 35 is an alignment pattern (on the rear plate). Alignment marks) and patterns formed on the faceplate 40 is an image recognition / calculation device that receives a signal from 36 and calculates the relative positional relationship between the face plate and the rear plate, and 41 is an X, Y, θ of the face plate based on information from 40. This is a position control device that applies feedback to the adjustment stage.
[0072]
1 denote the same components as those in FIG. The CCD 36 observes the alignment pattern formed on the face plate and the rear plate through the observation holes 201 and 201 formed in the position adjustment stages 30 and 33 and the heating plates 34 and 34 '.
[0073]
The image recognition / arithmetic unit 40 receives the signal from the CCD 36, synthesizes corresponding alignment patterns on one screen, and calculates the relative positional relationship. The position control device 41 controls the X, Y, and θ adjustment stages so that the relative positional relationship becomes a predetermined positional relationship. In this way, the face plate 141 and the rear plate 145 can be kept in a predetermined positional relationship.
[0074]
The voltage source 37 for applying the activation voltage can also be used for forming. In this embodiment, the relative positions of the face plate and the rear plate are adjusted using only the X, Y, θ adjustment stage 30 of the face plate.
Next, a manufacturing method will be described.
[0075]
(Face plate creation process)
(F-1) A phosphor and a black conductor were formed on a blue glass substrate by a printing method. The surface on the inner surface side of the fluorescent film was smoothed, and then Al was deposited by vacuum evaporation or the like to form a metal back.
[0076]
(F-2) A support frame having a height (interval between the face plate and the rear plate) of 2 mm was bonded to the peripheral portion of the face plate with frit glass. Moreover, frit glass was arrange | positioned by the dispenser method in the adhesion part with the rear plate of a support frame.
[0077]
(Create rear plate)
(R-1) In the same manner as in Example 1, the soda-lime glass was washed, and the lower wiring was formed by screen printing on the rear plate on which the silicon oxide film was formed by sputtering. Next, an interlayer insulating layer is formed between the lower wiring and the upper wiring. Furthermore, an upper wiring was formed. Next, element electrodes connected to the lower wiring and the upper wiring were formed.
[0078]
(R-2) Next, a conductive thin film made of PdO was formed by sputtering and then patterned to obtain a desired form.
[0079]
(R-3) Forming was performed by applying a voltage to the conductive thin film formed between the device electrodes through the upper wiring and the lower wiring.
A rear plate was prepared by the above process.
[0080]
(FR-1) face plate was prepared by the above process, introduced shi rear plate to the vacuum chamber, after fixed to the heating device 34, 34 ', subjected to evacuation.
[0081]
(FR-2) In a state where the distance between the face plate and the rear plate is 10 cm, acetone is introduced as an activation gas at 10 ⁻⁴ Torr through a gas flow rate controller (not shown), and the voltage source 37 for activation is used. A voltage was applied to activate.
[0082]
(FR-3) The temperature was raised with a predetermined profile while performing vacuum evacuation, and the temperature was raised to the sealing temperature while degassing the adsorbed activation gas, water, oxygen, carbon monoxide and the like. The sealing temperature at this time is determined by the frit glass used for bonding, and in this case, it was set to 410 ° C.
[0083]
(FR-4) After evacuating to a vacuum level of about 10 ^-7 Torr, pressurizing while aligning the rear plate and face plate on the X, Y, θ adjustment stage shown at 30 while maintaining the sealing temperature Then, the face plate 141 is lowered by the Z-axis moving mechanism, the rear plate, the face plate, and the support frame are brought into contact with each other, and after maintaining the pressurized state for 10 minutes, the temperature is lowered at 3 ° C. per minute and sealed. When the temperature was lowered by 10 ° C. from the wearing temperature, the alignment was stopped, and the rear plate fixed to the heating plate 34 was released so that it could move freely in the X and Y directions. Subsequently, it was gradually cooled to room temperature.
[0084]
(FR-5) After cooling to about room temperature, it was taken out from the vacuum chamber, and a getter process was performed by a high frequency heating method in order to maintain the degree of vacuum after sealing.
[0085]
In the image forming apparatus shown in FIG. 6 manufactured by the manufacturing method of the present invention completed as described above, each electron-emitting device is connected to the external terminals Dx1 to Dxm and Dy1 to Dyn, and the scanning signal and the modulation signal are not transmitted. Electrons are emitted by applying the signals from the signal generating means shown in the figure, a high voltage of 4 kV is applied to the metal back 69 through the high voltage terminal Hv, the electron beam is accelerated, collides with the fluorescent film 68, and is excited and emitted. The image was displayed. As a result, there was no positional deviation of the electron-emitting devices and the phosphors, and no luminance variation or color mixing due to the positional deviation was observed.
[0086]
[Example 4]
In this embodiment, an example in which an image signal is input to the image forming apparatus created in Embodiment 1 to display an image is shown. First, a scanning signal and a modulation signal were created from the input image signal. While sequentially scanning the container outer terminals Dx1 to Dxm according to the scanning signal, the modulation signals were inputted through Dy1 to Dyn, respectively. In this example, an accurate image could be displayed. This is considered to be because the emitted electrons are irradiated to a predetermined position.
[0087]
【The invention's effect】
As described above, the method for manufacturing an image forming apparatus according to the present invention forms a vacuum envelope by bonding members together while maintaining a predetermined positional relationship between the electron source and the image forming member in the vicinity of the sealing temperature. And offset of the relative position due to softening of the frit glass, etc., the electron source substrate and the face plate can be bonded with high positional accuracy, and there is no luminance unevenness or color mixing caused by the position shift and high quality An image forming apparatus can be manufactured.
[0088]
In addition, the electron source substrate and the face plate are separated from each other by a sufficient distance to obtain a sufficient conductance for the gas, and the temperature is raised to the sealing temperature. A high vacuum container can be formed, and stable electron emission characteristics can be obtained.
[0089]
In addition, when using a surface conduction electron-emitting device, the electron source substrate and the face plate can be easily separated into the electron source substrate by introducing an activation gas at a distance sufficient to obtain a sufficient conductance for the gas. Since the activation gas can be spread, uniform activation can be performed, and the characteristics of each electron-emitting device are uniform, so when the image forming apparatus is formed, the display quality without luminance unevenness is excellent. An image forming apparatus is manufactured.
[0090]
In addition, the temperature of the electron source substrate and the face plate can be increased to the sealing temperature while being spaced apart, and the exhaust gas can be used for sealing to remove the activated gas adsorbed on the member. Therefore, the improvement in the degree of vacuum that affects the electron emission characteristics and the shortening of the heat treatment process are realized, and remarkable effects such as the production of a high-quality and stable image forming apparatus are exhibited.
[Brief description of the drawings]
FIG. 1 is an explanatory diagram of a production process conceptually showing a production method of the present invention.
FIG. 2 is a block diagram illustrating a manufacturing process flow of the method for manufacturing the image forming apparatus according to the first exemplary embodiment.
3 is a block diagram showing a manufacturing process flow of a method for manufacturing an image forming apparatus according to Embodiment 2. FIG.
4 is a block diagram illustrating a manufacturing process flow of a method for manufacturing an image forming apparatus according to Embodiment 3. FIG.
[5] schematic view showing a manufacturing apparatus example of images forming apparatus.
6 is a perspective view showing an image forming apparatus manufactured in Example 1. FIG.
7 is a schematic view showing a surface conduction electron-emitting device of a cold cathode used in Example 1. FIG.
8 is a schematic diagram showing an example of a fluorescent film used in Example 1. FIG.
9 is a schematic diagram showing a field emission device used in the image forming apparatus manufactured in Example 2. FIG.
10 is a schematic view showing an image forming apparatus manufactured in Example 2. FIG.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Vacuum chamber 11 Gas introduction pipe 12 Exhaust pipe for vacuum exhaust 22, 66, 143 Support frame 23 Joint member of face plate, rear plate, and support frame 30 X, Y, θ adjustment stage for face plate 31 Heat plate for face plate 32 Face plate Z adjustment mechanism 33 Rear plate X, Y, θ adjustment stage 34 Rear plate heating plate 35 Rear plate side alignment pattern observation CCD
36 CCD for face plate side alignment pattern observation
37 Activation Process Voltage Source 39 Activation Process Gas Cylinder 40 Image Recognition / Calculation Device 41 Position Adjustment Stage Control Device 42 Oil-Free Vacuum Exhaust Device 62 Surface Conduction Emitting Element 65, 131, 145 Rear Plate 67, 132, 141 Face plate 68 Fluorescent film 69 Metal back 71 Substrate 72, 73 Element electrode 74 Conductive thin film 75 Electron emission part 81 Black conductor 91 Face plate side alignment pattern 92 Rear plate side alignment pattern 133 Cathode 134 Gate electrode 135 Gate / cathode insulating layer 136 Converging electrode 147 Spacer 201 Rear plate side alignment pattern observation hole 202 Face plate side alignment pattern observation hole

Claims (8)

A method of manufacturing an image forming apparatus in which a first substrate on which phosphor excitation means is arranged and a second substrate on which phosphors emitted by the phosphor excitation means are arranged are sealed with a bonding material. There,
(1) In the chamber, the first substrate and the second substrate are held in a state where the sealing portion is not in contact, and the chamber is evacuated and the first means is heated by the heating means. A heating step of heating the substrate, the second substrate, and the bonding material;
(2) In a state where the inside of the chamber is evacuated, the first substrate and the second substrate are moved together with the heating unit to bring the sealing portion into contact with the first substrate and the second substrate. Sealing step of sealing the substrate with the bonding material,
Have
The method of manufacturing an image forming apparatus , wherein the heating of the first substrate and the second substrate by the heating unit heats the entire first substrate and the second substrate substantially uniformly . The method for manufacturing an image forming apparatus according to claim 1, wherein the sealing of the first substrate and the second substrate is performed via a support frame and a bonding material. 3. The method of manufacturing an image forming apparatus according to claim 2, wherein the heating step is performed in a state where the first substrate and the second substrate are arranged to face each other with a distance larger than the height of the support frame. The method for manufacturing an image forming apparatus according to claim 1, wherein the phosphor excitation unit is an electron-emitting device. The method for manufacturing an image forming apparatus according to claim 1, wherein the bonding material is a low-melting glass frit. A first substrate and a second substrate, wherein the first substrate and the second substrate are disposed opposite to each other, and the first substrate and the second substrate are externally disposed between the first substrate and the second substrate; A method of manufacturing an image forming apparatus, which has an airtight space, and has a phosphor and means for exciting the phosphor in the airtight space,
(1) The first substrate and the second substrate are held in a state where the sealing portion is not in contact with the chamber, and the chamber is evacuated, and the first substrate and the second substrate are heated by a heating unit. A heating step of heating the second substrate and the bonding material;
(2) After the heating step, in a state where hydrogen is introduced into the chamber, the first substrate or the second substrate is moved together with the heating unit to bring the sealing portion into contact with the first unit. A sealing step of sealing the substrate of 1 and the second substrate through the bonding material,
The method of manufacturing an image forming apparatus, wherein the heating of the first substrate and the second substrate by the heating unit heats the entire first substrate and the second substrate substantially uniformly. The partial pressure of hydrogen is 10 ^-3 The method of manufacturing an image forming apparatus according to claim 6, wherein the image forming apparatus is equal to or lower than millibar. The partial pressure of hydrogen is 10 ^-7 The method of manufacturing an image forming apparatus according to claim 6 or 7, wherein the image forming apparatus is at least millibar.

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