JP2000248267A - Electrification-reducing membrane, membrane forming method therefor, and image formation device and its production - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prepare an electrification-reducing membrane capable of reducing undesirable influences on emitted electrons, hardly varying electric resistance, excellent in stability and reproducibility and useful for an image formation device, or the like, by making a nitride of both a transition metal and silicon, obtained under a specific condition, exist in the membrane. SOLUTION: This membrane is prepared by making a nitride of both a transition metal and silicon which is obtained by sputtering a target made of both at least one transition metal selected from the group consisting of Cr, Ti, Ta, Mo and W and silicon (or silicon nitride) exist in the membrane itself. The surface nitrification degree of silicon, i.e., the weight ratio of (silicon nitride/silicon) in the nitride is >=60%. It is preferable to produce an image formation device containing both emissive elements and image formation members in an envelope and a spacer containing an electrification-reducing membrane having 10 nm-1 μm thickness, 10-7×Va2-105 Ωm resistivity and <=1% absolute value of negative temperature coefficient of resistance on the surface of a substrate material.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charge-relaxation film disposed in a container containing an electron-emitting device, an image forming apparatus including an electron-emitting device, an image forming member, and a spacer in the container. The present invention relates to a method for forming the charge relaxation film and a method for manufacturing an image forming apparatus.

[0002]

2. Description of the Related Art Flat-panel displays having a small depth are attracting attention as a replacement for cathode-ray tube displays because they are space-saving and lightweight. At present, there are flat type displays using a liquid crystal type, a plasma emission type, and a multi-electron source. The plasma emission type and the multi-electron source display have a large viewing angle and the image quality is comparable to that of a cathode ray tube, so that high-quality images can be displayed.

FIG. 14 is a schematic cross-sectional view of a display using a large number of minute electron sources, where 51 is an electron source formed on a rear plate 52 made of glass, and 54 is made of glass formed with a phosphor or the like. Face plate. As the electron source, cold cathode type electron-emitting devices such as a field emission type electron-emitting device or a surface conduction type electron-emitting device which emits electrons from a conical or needle-like tip capable of increasing the density have been developed. In FIG. 14, wiring for driving the electron source is omitted. As the display area of the display increases, the rear plate and the face plate need to be thicker in order to suppress the deformation of the substrate due to the difference between the internal vacuum and the external atmospheric pressure. This not only increases the weight of the display, but also causes distortion of the image when viewed at an angle. In order to support the atmospheric pressure using a relatively thin glass plate, a structural support called a spacer or a rib is used between the rear plate and the face plate. The distance between the rear plate on which the electron source is formed and the face plate on which the phosphor is formed is usually maintained at a sub-millimeter to several millimeters, and the inside is maintained at a high vacuum as described above.

A high voltage of several hundred volts or more is applied between an electron source and a phosphor to an unillustrated anode electrode (metal back) in order to accelerate electrons emitted from the electron source. That is, the electric field strength between the phosphor and the electron source is 1 kV / mm
Is applied, and there is a concern about discharge at the spacer portion. Further, the spacer is charged by a part of the electrons emitted from the nearby electron source or by a positive ion ionized by the emitted electrons being attached to the spacer. Electrons emitted from the electron source due to the charging of the spacer are bent in their trajectories, reach a different position from the normal position on the phosphor, and when the display image is viewed through the front glass, the image near the spacer is It is distorted.

In order to solve this problem, it has been proposed to remove the charge by making a small current flow through the spacer (Japanese Patent Application Laid-Open Nos. 57-118355 and 61-124031). There, a high-resistance thin film is formed on the surface of an insulating spacer so that a minute current flows on the surface of the spacer. The antistatic film used here is tin oxide or a mixed crystal thin film of tin oxide and indium oxide or a metal film.

[0006]

The thin film of tin oxide or the like used in the above-mentioned conventional example is so sensitive to a gas as oxygen that it is applied to a gas sensor, and its resistance value is likely to change in an atmosphere. In addition, since these materials and metal films have low specific resistance, they need to be formed in an island shape or extremely thinned in order to increase the resistance.

That is, the resistance of the conventional high-resistance film changes due to a difficulty in the reproducibility of film formation or a frit sealing in a display manufacturing process or a baking process (a process of heating the display while applying a vacuum). There is a drawback that it is easy to do.

The present invention has been made in view of the above problems, and a main object of the present invention is to provide a charge relieving film for reducing charge in a container containing an electron-emitting device.

Another object of the present invention is to provide the above-mentioned charge relaxation film which is thermally stable.

Another object of the present invention is to provide the above-mentioned charge relaxation film which can reduce the adverse effect on the emitted electrons.

Another object of the present invention is to provide an image forming apparatus having a spacer for reducing charging.

Another object of the present invention is to provide an image forming apparatus having the above-mentioned spacer, which is thermally stable.

Another object of the present invention is to provide an image forming apparatus in which the adverse effect on the emitted electrons due to the spacer is reduced and the irradiation position on the image forming member is minimized.

[0014]

Means for Solving the Problems The charge relaxation film of the present invention comprises:
It has a nitride compound of a transition metal and silicon obtained by sputtering a target of a transition metal and silicon or silicon nitride.

The method of forming a charge relaxation film according to the present invention comprises forming a charge relaxation film having a nitride compound of a transition metal and silicon by sputtering a target of a transition metal and silicon or silicon nitride. Features.

An image forming apparatus according to the present invention is an image forming apparatus including an electron-emitting device, an image forming member, and a spacer in an envelope. Characterized in that it has a spacer.

According to a method of manufacturing an image forming apparatus of the present invention, there is provided a method of manufacturing an image forming apparatus including an electron emitting element, an image forming member, and a spacer in an envelope. Forming a spacer by covering the charge-relaxation film, and disposing the spacer, the electron-emitting device, and the image forming member in the envelope, and then setting the envelope to a non-oxidizing atmosphere to form the spacer. It is characterized by having a step of performing sealing.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION
It is a preferred embodiment of the present invention that the present invention is applied to a spacer surface of an image forming apparatus using an electron-emitting device. However, similarly to the image forming apparatus, a device including an electron-emitting device in a container is used. In the case where a problem occurs, by applying the method to the inner surface of the container or the surface of a member arranged in the container, it is possible to reduce the adverse effect on the trajectory of the emitted electrons due to the charging described above, or to reduce the heat generated during manufacturing of the device. The same effect can be obtained that the change in the characteristics of the charge relaxation film due to the process can be reduced.

The charge-relaxation film removes the electric charge accumulated on the surface of the insulative substrate by coating the surface of the insulative substrate with a conductive film. Rs) is preferably 10 ¹² Ω or less. Furthermore, in order to obtain a sufficient antistatic effect, a lower resistance value is sufficient and it is preferably 10 ¹¹ Ω or less, and if the resistance is lower, the static elimination effect is improved.

In the case where the charge relaxation film is applied to the spacer of the display, the surface resistance Rs of the spacer is set in a desirable range from the viewpoint of antistatic and power consumption. The lower limit of the sheet resistance is limited by the power consumption of the spacer. The lower the resistance, the quicker the charge accumulated in the spacer can be removed, but the more power is consumed by the spacer. It is preferable that the charge relaxation film used for the spacer is a semiconductive material rather than a metal film having a small specific resistance. The reason is that when a material having a small specific resistance is used, the thickness of the charge relaxation film must be extremely thin in order to make the surface resistance Rs a desired value. Although it depends on the surface energy of the thin film material, the adhesion to the substrate, and the substrate temperature, a thin film smaller than 10 nm generally has an island shape, has an unstable resistance, and has poor film reproducibility.

Accordingly, it is preferable to use semiconductive materials having a specific resistance value larger than that of a metal conductor and smaller than that of an insulator. However, these materials often have a negative temperature coefficient of resistance. If the temperature coefficient of resistance is negative, the resistance value decreases due to the temperature rise due to the power consumed on the spacer surface, and furthermore, the temperature continues to rise due to heat generation, causing an excessive current to flow, so-called thermal runaway. However, thermal runaway does not occur in a situation where the calorific value, that is, power consumption and heat radiation are balanced. If the absolute value of the temperature coefficient of resistance (TCR) of the charge relaxation film material is small, thermal runaway hardly occurs.

When the power consumption per square cm of the spacer exceeds about 0.1 W under the condition that the charge relaxation film having the TCR of -1% is used, the current flowing through the spacer continues to increase.
Experiments have shown that a thermal runaway condition may occur. This depends, of course, on the shape of the spacer, the voltage Va applied between the spacers, and the temperature coefficient of resistance of the charge relaxation film, but from the above conditions, the power consumption does not exceed 0.1 W per square cm.
The value of Rs is 10 × Va ² / h ² Ω or more. Here, h is the distance between members where the spacers are arranged, and in the above display, it is the distance between the face plate and the rear plate.
That is, since the h of the image forming apparatus represented by the flat display is set to 1 cm or less, the sheet resistance Rs of the charge relaxation film formed on the spacer is 10 × Va ² Ω to 10 ¹¹
It is desirable to set in the range of Ω.

As described above, the thickness t of the charge relaxation film formed on the insulating substrate is desirably 10 nm or more. On the other hand, the film thickness t
If it exceeds 1 μm, the film stress increases and the risk of film peeling increases, and the productivity is poor because the film formation time is prolonged. Therefore, the film thickness is 10 nm to 1 μm, more preferably 20 to 50
Desirably, it is 0 nm.

The specific resistance ρ is the product of the sheet resistance Rs and the film thickness t. From the preferable range of Rs and t described above, the specific resistance ρ of the charge relaxation film is 10 ⁻⁷ × Va ² Ωm to 10 ⁵ Ωm. It is desirable that Further, in order to realize more preferable ranges of the sheet resistance and the film thickness, ρ is (2 × 10 ⁻⁷ ) Va ² Ωm to 5 × 10 ⁴ Ω.
m.

The electron acceleration voltage Va in the display is
The voltage is 100 V or more, and a voltage of 1 kV or more is required to obtain sufficient luminance when a high-speed electronic phosphor generally used for a CRT is used for a flat panel display. In terms of va = 1 kV, the specific resistance of the charge relaxation film is preferably ranges 0.1Ωm~10 ⁵ Ωm.

As a result of intensive studies on materials for realizing the above-described characteristics of the charge relaxation film, it has been found that a transition metal and a nitrogen compound of silicon are particularly excellent as a charge relaxation film. Transition metals are Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Nb, M
It is selected from o, Hf, Ta, W, etc., and these may be used alone, but it is also possible to use two or more transition metals together. Transition metals or their nitrides are good conductors, and silicon nitride is an insulator. Therefore, by adjusting the composition of the transition metal and silicon in the above-mentioned nitrogen compound film, the specific resistance value can be controlled in a wide range from a good conductor to an insulator. That is, the above-described specific resistance desirable as the charge relaxation film for the spacer can be realized by changing the composition of the transition metal.

Here, in the case of a nitrogen compound of silicon and a transition metal, a transition metal ratio (transition metal / silicon) at which a preferable specific resistance is obtained is about 7 to 40 at.
%, About 36 to 80 at. %, About 28 to 67 at. % Is a preferable composition range.

Further, it was found that the above-mentioned charge relaxation film made of a nitrogen compound of a transition metal and silicon is a stable material having a small change in resistance value, particularly in a process of manufacturing an image forming apparatus described later. The material has a negative temperature coefficient of resistance but an absolute value of less than 1% and is unlikely to cause thermal runaway. Furthermore, nitride has a low secondary electron emission rate, and therefore is not easily charged by electron irradiation, and is a material suitable for a display using an electron beam.

The transition metal and silicon nitrogen compound film, which is the charge relaxation film of the present invention, is a thin film formed by a sputtering method, a reactive sputtering method, an electron beam evaporation method, an ion plating method, an ion assisted evaporation method, a CVD method, or the like. It can be formed on an insulating substrate by a forming means. For example, in the case of a sputtering method, a target of silicon and a transition metal is sputtered in a gas containing at least one of nitrogen and ammonia to nitride sputtered metal atoms and obtain a nitrogen compound film of the above transition metal and silicon. Can be It is also possible to use an alloy target of silicon and transition metal whose composition has been adjusted in advance. By adjusting the sputtering conditions such as gas pressure, nitrogen partial pressure, film forming rate, etc., the amount of nitrogen in the nitride film changes, but the more the nitrided, the better the stability of the film.

Although the resistance value of the nitride changes depending on the nitrogen concentration and the defect in the nitride film, the conductivity caused by the defect changes when the defect is relaxed in the thermal process. Therefore, a nitride film that has been sufficiently nitrided and has few defects tends to have excellent resistance value stability. The charge relaxation film used for the spacer in the present invention has a good stability because silicon forms nitride and conductivity is given by the transition metal element. Since a nitrogen compound film having a stable resistance value can be obtained, 60 at. % Or more is preferably a nitride, and particularly preferably 65% or more is a nitride.

Although it is desirable to manufacture the image forming apparatus in an atmosphere in which the nitrogen compound film on the spacer surface is not oxidized, the image forming apparatus may be exposed to a high-temperature oxidizing atmosphere in a manufacturing process of the image display device such as a sealing process. A nitride having a nitrogen content lower than the stoichiometric ratio is easily oxidized, and the nitrogen compound film used in the present invention is polycrystalline. Since the secondary electron emission rate that affects charging is dominated by the material having a surface of several tens of nanometers, if the surface is oxidized during the image display device process and the secondary electron emission rate increases, the charge removal effect decreases. Therefore,
As a nitride used for the spacer, a nitride film that has a property that an oxide layer is hardly formed, that is, a nitride film that is sufficiently nitrided or has good crystal orientation is preferable.

In a manufacturing condition in which high-energy nitrogen ions are incident on a deposition surface of a thin film, for example, in a condition in which a negative bias is applied to a substrate to perform sputter deposition, the nitrogen content (nitridity) in the nitride is increased. Can be.
Under these manufacturing conditions, the crystal orientation tends to be improved, and an increase in the degree of nitridation leads to an improvement in the performance of the charge relaxation film. In the present invention, the degree of nitridation is the atomic concentration ratio of those nitrides to silicon elements, and XPS (X
(Line photoelectron spectroscopy).

The case where the charge relaxation film is used as a spacer for a display has been described above. However, since the above-mentioned nitrogen compound is a material having a high melting point and a high hardness, it is not only used as a spacer for a display but also as described above. It is a highly useful material if it is coated on the inner surface of the container or the surface of a member arranged in the container of the device in which the electron-emitting device is enclosed in the container, and the other components are used in the same manner as the above specification of the spacer.

Here, as the electron-emitting device used in the present invention, two types of a thermionic type and a cold cathode type are known. The cold-cathode type electron-emitting device includes a field emission type (hereinafter abbreviated as FE type), a surface conduction type electron-emitting device,
Metal / insulating layer / metal type (hereinafter abbreviated as MIM type) and the like. The type of the electron-emitting device in the present invention is not particularly limited, but a cold cathode type is particularly preferably used.

As an example of the surface conduction electron-emitting device, M.
I. Elinson, Radio Eng. Electron Pys., 10, (1965). The surface conduction electron-emitting device utilizes a phenomenon in which electron emission occurs when a current flows in a small-area thin film formed on a substrate in parallel with the film surface. The surface conduction type electron-emitting device may be formed of Sn by Elinson et al.
Those using O ₂ thin film, by an Au thin film [G.Dittme
r: "Thin Solid Films", 9,317 (1972)], In 2 O 3 / Sn
O ₂ due to the thin film [M.Hartwell and CGFonstad: "IEE
E Trans. ED Conf. ", 519 (1975)], using a carbon thin film [Hisashi Araki et al .: Vacuum, Vol. 26, No. 1, p. 22 (1
983)] has been reported. Further, there is also a device using a fine particle film for an electron emission portion or the like as described in an embodiment described later. Examples of FE types include WPDyke & W.W.Dolan, "Fi
eld emission ", Advance in Electron Physics, 8, 89 (195
6) Or CASpindt, "PHYSICAL Properties of thin-
film field emission cathodes with molybdenium cone
s ", J. Appl. Phys., 47, 5248 (1976).
CAMead, "The tunnel-emission am
plifier, J. Appl. Phys., 32, 646 (1961) and the like are known.

The image forming apparatus of the present invention may have the following configuration.

(1) The image forming apparatus forms an image by irradiating the image forming member with electrons emitted from the electron-emitting device in response to an input signal. In particular, an image display device in which the image forming member is a phosphor can be configured.

(2) The electron-emitting devices can be arranged in a simple matrix having a plurality of cold cathode devices arranged in a matrix with a plurality of row wirings and a plurality of column wirings.

(3) In the electron-emitting device, a plurality of rows of cold-cathode devices, each having a plurality of cold-cathode devices arranged in parallel and connected at both ends (referred to as a row direction), are arranged in a direction perpendicular to the wiring. A control electrode (also referred to as a grid) disposed above the cold cathode device along the column direction (called a column direction) can form a ladder-like arrangement for controlling electrons from the cold cathode device.

(4) According to the concept of the present invention, the present invention is not limited to an image display device, and may be used as an alternative light source such as a light emitting diode of an optical printer including a photosensitive drum and a light emitting diode. Can also. At this time,
By appropriately selecting the above-mentioned m row-directional wirings and n column-directional wirings, the present invention can be applied not only to a linear light-emitting source but also to a two-dimensional light-emitting source. In this case, the image forming member is not limited to a substance that emits light directly, such as a phosphor used in the following embodiments, and a member that forms a latent image by electron charging can also be used.

Further, according to the concept of the present invention, the present invention is applicable to a case where a member irradiated with electrons emitted from an electron source is other than an image forming member such as a phosphor, as in an electron microscope. Is applicable. Therefore, the present invention can also take a form as a general electron beam apparatus that does not specify a member to be irradiated.

Hereinafter, an image forming apparatus provided with a charge relaxation film of the present invention and a spacer using the charge relaxation film will be specifically described with reference to the drawings.

FIG. 1 is a schematic sectional view of the image forming apparatus with the spacer 10 as a center. In the figure, 1 is an electron source,
Reference numeral 2 denotes a rear plate, 3 denotes a side wall, and 7 denotes a face plate. The rear plate 2, the side wall 3, and the face plate 7 form an airtight container (enclosure 8) for maintaining the inside of the display panel in a vacuum. I have.

The spacer 10 has a charge relaxation film 10c according to the present invention formed on the surface of an insulating base material 10a. The spacer 10 is provided to prevent the vacuum envelope 8 from being damaged or deformed by receiving the atmospheric pressure by evacuating the envelope 8. The material, shape, arrangement, and number of the spacers 10 are the shape of the envelope 8 and the coefficient of thermal expansion.
It is determined in consideration of the atmospheric pressure, heat and the like that the envelope receives. The shape of the spacer includes a flat plate type, a cross type, an L-shaped type, and the like.
In addition, as shown in FIGS. 15A and 15B, the substrate may have a shape in which holes are formed corresponding to each electron source or a plurality of electron sources, and are appropriately set. The effect of using the spacer 10 becomes remarkable as the size of the image forming apparatus increases.

Since the insulating base material 10a needs to support the atmospheric pressure applied to the face plate 7 and the rear plate 2, a material having high mechanical strength and high heat resistance, such as glass and ceramics, is suitable. When glass is used as the material of the face plate and the rear plate, in order to suppress thermal stress during the image forming apparatus manufacturing process, the spacer insulating base material 10a is made of the same material as these materials as much as possible or has the same thermal expansion coefficient. Desirably, it is a material.

When a glass containing alkali ions such as soda glass is used for the insulating base material 10a, for example, the conductivity of the charge relaxation film may be changed by Na ions. By forming the layer 10b between the insulating base material 10a and the charge relaxation film 10c, it is possible to suppress the penetration of alkali ions such as Na into the charge relaxation film 10c.

The charge relaxation film 10c is a nitride compound film of a transition metal and silicon. For example, Ti, Cr,
Ta was used. A (transition metal / silicon) ratio at which a preferable specific resistance is obtained as a spacer for a display is 7 at. % To 40 at. %. When used for applications other than display, a wide range of materials can be used without being limited to the above range.

A proposal to use a nitride compound film of a transition metal and silicon as a charge relaxation film has already been made by the present applicant (Japanese Patent Application No. 9-360957).

The spacer 10 is an X-direction wiring 9 for driving the metal back 6 and the electron source (details will be described later).
By electrically connecting to both ends, almost the acceleration voltage Va is applied to both ends of the spacer 10. In this example, the spacer is connected to the wiring, but may be connected to a separately formed electrode. Furthermore, the face plate 7 and the rear plate 2
In a configuration in which an intermediate electrode plate (grid electrode or the like) for shaping an electron beam or preventing electrification of a substrate insulating portion is provided between the intermediate electrode and the intermediate electrode plate, the spacer may penetrate the intermediate electrode plate or the like. You may connect separately via a board etc.

When electrodes 11 of good conductivity, such as Al and Au, are formed at both ends of the spacer, there is an effect of improving the electrical connection between the charge relaxation film and the electrodes on the face plate and the rear plate.

Next, the basic configuration of an image forming apparatus using the spacer 10 will be described. FIG. 2 is a perspective view of a display panel using the spacer, and a part of the panel is cut away to show the internal structure.

In FIG. 2, similarly to FIG. 1, 2 is a rear plate, 3 is a side wall, and 7 is a face plate. The rear plate 2, the side wall 3, and the face plate 7 maintain the inside of the display panel at a vacuum. (Enclosure 8) is formed. When assembling an airtight container, it is necessary to seal the joints of each member to maintain sufficient strength and airtightness.For example, apply frit glass to the joints, and in air or nitrogen atmosphere, The sealing is performed by baking at 400 to 500 degrees for 10 minutes or more, but it is preferable to perform the sealing in a non-oxidizing atmosphere such as nitrogen because the nitrogen compound film formed on the spacer surface is not oxidized. A method of evacuating the inside of the airtight container to a vacuum will be described later.

A substrate 13 is fixed to the rear plate 2. On the substrate, the cold cathode type electron-emitting device 1 is N ×
M (N and M are positive integers of 2 or more and are appropriately set according to the target number of display pixels. For example, in an image forming apparatus for displaying a high-definition television, It is desirable to set N = 3000 and M = 1000 or more.) The N × M cold cathode type electron-emitting devices are arranged in a simple matrix by M X-directional wirings 9 and N Y-directional wirings 12. Said,
Cold cathode type electron-emitting device 1, X-direction wiring 9, Y-direction wiring 1
2. The part constituted by the substrate 13 is called a multi-electron beam source. The manufacturing method and structure of the multi-electron beam source will be described later in detail.

In this embodiment, the substrate 13 of the multi-electron beam source is fixed to the rear plate 2 of the hermetic container. However, when the substrate 13 of the multi-electron beam source has a sufficient strength. The substrate 13 of the multi-electron beam source may be used as the rear plate of the hermetic container.

The fluorescent film 5 is formed on the lower surface of the face plate 7. Since the present embodiment is a color image forming apparatus, phosphors of three primary colors of red, green and blue used in the field of CRT are separately applied to a portion of the fluorescent film 5. The phosphors of each color are separately applied in stripes as shown in FIG. 4A, for example, and black bodies 5b are provided between the stripes of the phosphors. The purpose of providing the black body 5b is to prevent the display color from being shifted even if there is a slight shift in the irradiation position of the electron beam, to prevent reflection of external light, and to prevent the display contrast from lowering. It is. Although graphite is used as the main component for the black body 5b, any other material may be used as long as it is suitable for the above purpose. Alternatively, the black body 5b may be made conductive.

The method of applying the phosphors of the three primary colors is not limited to the stripe arrangement shown in FIG. 4A, but may be, for example, a delta arrangement as shown in FIG. Other arrangements may be used.

When a monochrome display panel is formed, a monochromatic phosphor material may be used for the phosphor film 5, and a black conductive material is not necessarily used.

A metal back 6 known in the field of CRTs is provided on the surface of the fluorescent film 5 on the rear plate side. The purpose of providing the metal back 6 is to improve the light utilization rate by mirror-reflecting a part of the light emitted from the fluorescent film 5,
Examples include protecting the fluorescent film 5 from collision with negative ions, acting as an electrode for applying an electron beam acceleration voltage, and acting as a conductive path for excited electrons of the fluorescent film 5. The metal back 6 was formed by forming the fluorescent film 5 on the face plate substrate 4, then smoothing the surface of the fluorescent film, and vacuum-depositing Al thereon. When a fluorescent material for a low acceleration voltage is used for the fluorescent film 5, the metal back 6 may not be used.

Although not used in this embodiment,
A transparent electrode made of, for example, ITO may be provided between the face plate substrate 4 and the fluorescent film 5 for the purpose of applying an acceleration voltage or improving the conductivity of the fluorescent film.

Dx1 to Dxm, Dy1 to Dyn and Hv are electric connection terminals having an airtight structure provided for electrically connecting the display panel to an electric circuit (not shown). Dx1 to Dxm are wirings in the X direction of the multi-electron beam source,
Dy1 to Dyn are the wirings in the Y direction of the multi-electron beam source and Hv
Is electrically connected to the metal back 6 of the face plate.

In order to evacuate the inside of the hermetic container, after the hermetic container is assembled, an exhaust pipe (not shown) and a vacuum pump are connected, and the inside of the hermetic container is reduced to a pressure of about 10 ^-5 [Pa]. Exhaust. Thereafter, the exhaust pipe is sealed, but a getter film (not shown) is formed at a predetermined position in the airtight container immediately before or after the sealing in order to maintain the pressure in the airtight container. The getter film is, for example, a film formed by heating and depositing a getter material containing Ba as a main component by a heater or high-frequency heating, and the inside of the hermetic container is 10 ^{−3 to} 10 ⁻⁵ by the adsorbing action of the getter film. Pa].

Next, a method of manufacturing the multi-electron beam source used for the display panel of the embodiment will be described. The multi-electron beam source used in the image forming apparatus of the present invention is not limited as long as it is an electron source in which cold-cathode electron-emitting devices are arranged in a simple matrix wiring. Therefore, for example, a cold cathode electron-emitting device such as a surface conduction electron-emitting device, an FE type, or an MIM type can be used.

However, in a situation where an inexpensive image forming apparatus having a large display screen is required, a surface conduction type electron-emitting device is particularly preferable among these cold cathode type electron-emitting devices. That is, in the FE type, since the relative position and shape of the emitter cone and the gate electrode greatly affect the electron emission characteristics, extremely high-precision manufacturing technology is required, but this achieves a large area and a reduction in manufacturing cost. Is a disadvantageous factor. In the MIM type, it is necessary to make the thickness of the insulating layer and the upper electrode thin and uniform, which is also a disadvantageous factor in achieving a large area and a reduction in manufacturing cost. On the other hand, since the surface conduction electron-emitting device has a relatively simple manufacturing method, it is easy to increase the area and reduce the manufacturing cost. The present inventors have also found that among the surface conduction electron-emitting devices, those in which the electron-emitting portion or its peripheral portion is formed of a fine particle film have particularly excellent electron-emitting characteristics and can be easily manufactured. . Therefore, it can be said that it is most suitable for use in a multi-electron beam source of a high-luminance, large-screen image forming apparatus. Therefore,
In the display panel of the above embodiment, a surface conduction electron-emitting device in which the electron-emitting portion or its peripheral portion is formed of a fine particle film is used. Therefore, the basic configuration, manufacturing method, and characteristics of a suitable surface conduction electron-emitting device will be described first, and then the structure of a multi-electron beam source in which many devices are arranged in a simple matrix will be described. [Suitable device configuration and manufacturing method of surface conduction electron-emitting device] The surface-conduction electron-emitting device in which the electron-emitting portion or its peripheral portion is formed of a fine particle film has two typical types, a flat type and a vertical type. Is raised. (Flat-Type Surface-Conduction-Type Electron-Emitting Device) First, the device configuration and manufacturing method of a flat-type surface-conduction-type electron-emitting device will be described.

FIG. 5A is a plan view for explaining the structure of a plane type surface conduction electron-emitting device, and FIG. 5B is a cross-sectional view of FIG. 5A. In the figure, 13 is a substrate, 14 and 1
5 is an element electrode, 16 is a conductive thin film, 17 is an electron-emitting portion formed by an energization forming process, and 18 is a thin film formed by an energization activation process.

As the substrate 13, for example, various glass substrates such as quartz glass and blue plate glass, various ceramic substrates such as alumina, or an insulating layer made of, for example, SiO ₂ is formed on the various substrates described above. A laminated substrate or the like can be used.

The device electrodes 14 and 15 provided on the substrate 13 in parallel with the substrate surface are formed of a conductive material. For example, Ni, Cr, A
Metals such as u, Mo, W, Pt, Ti, Cu, Pd, Ag and the like, alloys of these metals, metal oxides such as In ₂ O ₃ -SnO ₂ , and semiconductors such as polysilicon The material may be appropriately selected from the following. An electrode can be easily formed by using a combination of a film forming technique such as vacuum evaporation and a patterning technique such as photolithography and etching. However, the electrode can be formed by other methods (for example, printing technique). I can't wait.

The shapes of the device electrodes 14 and 15 are appropriately designed according to the application purpose of the electron-emitting device. Generally, the electrode interval L is usually designed by selecting an appropriate numerical value from the range of several tens nm to several tens of μm. It is in the range of μm. As for the thickness d of the device electrode, an appropriate numerical value is usually selected from a range of several tens nm to several μm.

Further, a fine particle film is used for the portion of the conductive thin film 16. The fine particle film described here refers to a film including a large number of fine particles as constituent elements (including an island-shaped aggregate). When the fine particle film is examined microscopically, usually, a structure in which the individual fine particles are spaced apart from each other, a structure in which the fine particles are adjacent to each other, or a structure in which the fine particles overlap each other is observed.

The particle size of the fine particles used for the fine particle film is several nm.
Although it is included in the range of 1/10 to several hundreds of nm, particularly preferred is the one in the range of 1 to 20 nm. Further, the thickness of the fine particle film is appropriately set in consideration of various conditions described below. That is, conditions necessary for good electrical connection with the device electrode 14 or 15, conditions necessary for good energization forming described later, and electric resistance of the fine particle film itself to an appropriate value described later. Necessary conditions, etc. Specifically, it is set in the range of 1/10 to several hundred nm of several nm, but the range is preferably 1 nm to 50 nm.

Materials that can be used to form the fine particle film include, for example, Pd, Pt, Ru, Ag,
Au, Ti, In, Cu, Cr, Fe, Zn, Sn, T
a, W, Pb, and other metals, PdO, S
Oxides such as nO ₂ , In ₂ O ₃ , PbO, Sb ₂ O ₃ , etc .; HfB ₂ , ZrB ₂ , LaB ₆ , C
Borides such as eB ₆ , YB ₄ , GdB ₄ , etc., TiC, ZrC, HfC, TaC, SiC, WC,
And other carbides, TiN, ZrN, Hf
Nitrides such as N, etc., semiconductors such as Si, Ge, etc., carbon, and the like are listed, and are appropriately selected from these.

As described above, the conductive thin film 16 is formed of a fine particle film.
^It was set to be within the range of ³ to 10 ⁷ [Ohm / sq].

Since it is desirable that the conductive thin film 16 and the device electrodes 14 and 15 are electrically connected well, they have a structure in which a part of each of them overlaps.
In the example of FIG. 5, the overlapping manner is as follows.
Although the device electrode and the conductive thin film are laminated in this order, the substrate, the conductive thin film and the device electrode may be laminated in this order from the bottom in some cases.

The electron emitting portion 17 is formed of a conductive thin film 16
Is a crack-like portion formed in a part of the conductive thin film, and has a property of being higher in electrical resistance than the surrounding conductive thin film. The cracks are formed by performing a later-described energization forming process on the conductive thin film 16. Within a crack, a few nm
In some cases, fine particles having a particle diameter of 1/10 to several tens of nm are arranged. Since it is difficult to accurately and accurately show the actual position and shape of the electron-emitting portion, they are schematically shown in FIG.

The thin film 18 is a thin film made of carbon or a carbon compound, and covers the electron emitting portion 17 and its vicinity. After the energization forming process, the thin film 18
It is formed by performing an energization activation process described later.

The thin film 18 is made of any one of single-crystal graphite, polycrystalline graphite, and amorphous carbon, or a mixture thereof, and has a thickness of 50 nm or less.
More preferably, it is set to nm or less.

Since it is difficult to accurately show the actual position and shape of the thin film 18, it is schematically shown in FIG.

The basic structure of the preferred device has been described above. In the embodiment, the following device was used.

That is, blue glass was used for the substrate 13 and Pt thin films were used for the device electrodes 14 and 15. The thickness d of the device electrode was 100 nm, and the electrode interval L was 2 μm.

Pd or P is used as the main material of the fine particle film.
Using dO, the thickness of the fine particle film is about 10 nm, and the width W is 10 nm.
And

Next, a description will be given of a method of manufacturing a suitable flat surface conduction electron-emitting device. 6 (a) to 6 (d)
Is a cross-sectional view for explaining a manufacturing process of the surface conduction electron-emitting device. In each of the constituent members, the same components as those in FIG. 5 are denoted by the same reference numerals. 1) First, device electrodes 14 and 15 are formed on a substrate 13 as shown in FIG. In the formation, the substrate 13 is sufficiently washed in advance with a detergent, pure water, and an organic solvent, and then the material of the element electrode is deposited (for example, vacuum deposition such as a vapor deposition method or a sputtering method). Technology can be used.) Thereafter, the deposited electrode material is patterned by using a photolithography and etching technique to form a pair of device electrodes 14 and 15. 2) Next, as shown in FIG.
To form In forming, first, the device electrode 1
An organic metal solution is applied to the substrate 13 on which the layers 4 and 15 are formed, dried, heated and baked to form a fine particle film, and then patterned into a predetermined shape by photolithography and etching. Here, the organometallic solution is a solution of an organometallic compound whose main element is a material of fine particles used for the conductive thin film. Specifically, in this embodiment, Pd was used as a main element. In the embodiment, the dipping method is used as the coating method, but other methods such as a spinner method and a spray method may be used.

As a method of forming a conductive thin film made of a fine particle film, a method other than the method of applying an organic metal solution used in the present embodiment, for example, a vacuum evaporation method, a sputtering method, or a chemical vapor deposition method In some cases, a deposition method or the like is used. 3) Next, as shown in FIG. 6C, an appropriate voltage is applied between the element electrode 14 and the element electrode 15 from the forming power supply 19, and the energization forming process is performed. Form.

The energization forming treatment is to energize the conductive thin film 16 made of a fine particle film, and to appropriately break, deform, or alter a part of the conductive thin film 16 to change into a structure suitable for emitting electrons. This is the process that causes In a portion of the conductive thin film made of the fine particle film that has been changed to a structure suitable for emitting electrons (that is, the electron emitting portion 17), an appropriate crack is formed in the thin film. It should be noted that the electrical resistance measured between the element electrode 14 and the element electrode 15 is significantly increased after the formation, as compared to before the electron emission portion 17 is formed.

FIG. 7 shows an example of an appropriate voltage waveform applied from the forming power supply 19 in order to explain the energization method in more detail. When forming a conductive thin film made of a fine particle film, a pulsed voltage is preferable,
In the case of the present embodiment, as shown in FIG.
One triangular wave pulse was continuously applied at a pulse interval T2.
At that time, the peak value Vpf of the triangular wave pulse was sequentially increased. In addition, monitor pulses Pm for monitoring the state of formation of the electron-emitting portion 17 were inserted at appropriate intervals between the triangular-wave pulses, and the current flowing at that time was measured by the ammeter 20.

In the embodiment, for example, in a vacuum atmosphere of about 10 ⁻³ Pa, for example, the pulse width T 1 is set to 1
Milliseconds, the pulse interval T2 is 10 milliseconds, and the peak value Vpf
Was increased by 0.1 V for each pulse. Then, each time five triangular waves were applied, the monitor pulse Pm was inserted once. The monitor pulse voltage Vpm is set to 0. 1 so as not to adversely affect the forming process.
It was set to 1V. Then, the device electrode 14 and the device electrode 15
When the electrical resistance during the period becomes 1 × 10 ⁶ ohms, that is, when the current measured by the ammeter 20 when the monitor pulse is applied becomes 1 × 10 ⁻⁷ A or less, the energization related to the forming process is terminated. did.

The above method is a preferred method for the surface conduction electron-emitting device of this embodiment. For example, the material and film thickness of the fine particle film or the design of the surface conduction electron-emitting device such as the element electrode interval L If you change
It is desirable to appropriately change the energization conditions accordingly. 4) Next, as shown in FIG.
1 to apply an appropriate voltage between the device electrode 14 and the device electrode 15 to perform the activation process to improve the electron emission characteristics.

The energization activation process is a process of energizing the electron-emitting portion 17 formed by the energization forming process under appropriate conditions to deposit carbon or a carbon compound in the vicinity thereof. In FIG. 6D,
A deposit made of carbon or a carbon compound is schematically shown as the member 18. Note that by performing the energization activation process, the emission current at the same applied voltage can be typically increased by 100 times or more as compared with before the energization activation process.

More specifically, by periodically applying a voltage pulse in a vacuum atmosphere within a range of 10 ^-1 to 10 ^-4 Pa, carbon or carbon originating from an organic compound existing in the vacuum atmosphere can be obtained. The carbon compound is deposited. The deposit 18
It is any one of single crystal graphite, polycrystal graphite and amorphous carbon, or a mixture thereof, and has a film thickness of 50 nm or less, more preferably 30 nm or less.

FIG. 8A shows an example of an appropriate voltage waveform applied from the activation power supply 21 in order to explain the energization method in more detail. In the present embodiment, the energization activation process is performed by applying a rectangular wave of a constant voltage periodically. Specifically, the voltage Vac of the rectangular wave is 14 V, the pulse width T3 is 1 millisecond, and the pulse width is 3 ms. The interval T4 was 10 milliseconds. The above-described energization conditions are preferable conditions for the surface conduction electron-emitting device of this embodiment, and when the design of the surface conduction electron-emitting device is changed, the conditions should be changed accordingly. desirable.

Reference numeral 22 shown in FIG. 6D denotes an anode electrode for capturing the emission current Ie emitted from the surface conduction electron-emitting device.
Is connected. When the activation process is performed after the substrate 13 is incorporated into the display panel, the phosphor screen of the display panel is used as the anode electrode 22.

While a voltage is applied from the activation power supply 21,
The emission current Ie is measured by the ammeter 24 to monitor the progress of the energization activation process, and the operation of the activation power supply 21 is controlled. FIG. 8B shows an example of the emission current Ie measured by the ammeter 24. When the pulse voltage is started to be applied from the activation power supply 21, the emission current Ie increases with the passage of time, but eventually saturates. And hardly increase. As described above, when the emission current Ie is substantially saturated, the application of the voltage from the activation power supply 21 is stopped, and the energization activation process ends.

The above-described energization conditions are preferable conditions for the surface conduction electron-emitting device of this embodiment.
When the design of the surface conduction electron-emitting device is changed, it is desirable to appropriately change the conditions accordingly.

As described above, the plane type surface conduction electron-emitting device shown in FIG. 6E was manufactured. (Vertical Type Surface Conduction Electron Emitting Element) FIG. 9 shows another typical configuration of a surface conduction electron emitting element in which an electron emitting portion or its periphery is formed of a fine particle film, that is, a vertical surface conduction electron emitting device. Element. FIG. 9 is a schematic cross-sectional view for explaining the basic structure of the vertical type. In the figure, 25 is a substrate, 26 and 27 are device electrodes, 28 is a step forming member, and 29 is a conductive film using a fine particle film. Reference numeral 30 denotes an electron emitting portion formed by an energization forming process, and 31 denotes a thin film formed by an energization activation process.

The difference between the vertical type and the flat type described above is that one element electrode 26 is provided on the step forming member 28, and the conductive thin film 29 covers the side surface of the step forming member 28. On the point. Therefore, the element electrode interval L in the planar type shown in FIG. 5 is set as the step height Ls of the step forming member 28 in the vertical type. In addition, the substrate 2
5, the element electrodes 26 and 27, and the conductive thin film 29 using the fine particle film, the materials listed in the description of the flat type can be similarly used. For the step forming member 28, an electrically insulating material such as SiO ₂ is used. [Characteristics of the surface conduction electron-emitting device used in the image forming apparatus] The element configuration and the manufacturing method of the planar and vertical surface conduction electron-emitting devices have been described above. The characteristics will be described.

FIG. 10 shows typical examples of (emission current Ie) versus (element applied voltage Vf) characteristics and (element current If) versus (element applied voltage Vf) characteristics of the elements used in the image forming apparatus. . Note that the emission current Ie is significantly smaller than the element current If, and it is difficult to show them on the same scale. In addition, these characteristics are changed by changing design parameters such as the size and shape of the element. Therefore, 2
The graphs in the book are shown in arbitrary units.

The element used in the image forming apparatus has an emission current I
e has three characteristics described below.

First, when a voltage higher than a certain voltage (hereinafter referred to as a threshold voltage Vth) is applied to the element, the emission current Ie sharply increases. On the other hand, when the voltage is lower than the threshold voltage Vth, the emission current Ie increases. Ie is hardly detected. That is, it is a non-linear element having a clear threshold voltage Vth with respect to the emission current Ie.

Secondly, since the emission current Ie changes depending on the voltage Vf applied to the element, the emission current Ie depends on the voltage Vf.
The magnitude of e can be controlled.

Third, since the response speed of the current Ie emitted from the element is faster than the voltage Vf applied to the element, the amount of charge of the electrons emitted from the element depends on the length of time during which the voltage Vf is applied. Can control.

Because of the above characteristics, the surface conduction electron-emitting device could be suitably used in an image forming apparatus. For example, in an image forming apparatus in which a large number of elements are provided corresponding to pixels of a display screen, if the first characteristic is used, it is possible to sequentially scan the display screen to perform display. That is, a voltage equal to or higher than the threshold voltage Vth is appropriately applied to the element under driving according to the desired light emission luminance, and a voltage lower than the threshold voltage Vth is applied to the element in the non-selected state. By sequentially switching the elements to be driven, the display screen can be sequentially scanned and displayed.

Further, since the emission luminance can be controlled by utilizing the second characteristic or the third characteristic, a gradation display can be performed. [Structure of a multi-electron beam source in which a large number of devices are arranged in a simple matrix] Next, a structure of a multi-electron beam source in which the above-described surface conduction electron-emitting devices are arranged on a substrate and arranged in a simple matrix will be described.

FIG. 11 is a plan view of the multi-electron beam source used for the display panel of FIG. On the substrate, surface conduction electron-emitting devices similar to those shown in FIG. 5 are arranged, and these devices are wired in a simple matrix by X-direction wiring electrodes 9 and Y-direction wiring electrodes 12. An insulating layer (not shown) is formed between the X-direction wiring electrodes 9 and the Y-direction wiring electrodes 12 at the intersections between the electrodes.
Electrical insulation is maintained. FIG. 12 shows a cross-sectional view along AA ′ of FIG.

The multi-electron source having such a structure is as follows.
X-direction wiring electrode 9 and Y-direction wiring electrode 1
2. After forming an inter-electrode insulating layer (not shown), a device electrode of a surface conduction electron-emitting device and a conductive thin film, power-supply energization forming to each device via an X-direction wiring electrode 9 and a Y-direction wiring electrode 12 It was manufactured by performing a process and an activation process.

[0103]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, specific embodiments of the present invention will be described with reference to the drawings. Embodiment 1 In this embodiment, first, a plurality of unformed electron sources 1 using surface conduction electron-emitting devices were formed on a rear plate 2. Cleaned blue plate glass was used as the rear plate 2, and 160 × 720 surface-conduction electron-emitting devices shown in FIG. The device electrodes 14 and 15 are Pt sputtered films, and X
The direction wiring 9 and the Y direction wiring 12 are Ag wirings formed by a screen printing method. The conductive thin film 16 is a PdO fine particle film obtained by firing a Pd amine complex solution.

As shown in FIG. 4A, the fluorescent film 5 serving as an image forming member adopts a stripe shape in which each color phosphor 5a extends in the Y direction, and the black body 5b is formed only between the color phosphors 5a. However, a shape in which pixels are provided in the X direction to separate the pixels in the Y direction and a portion for installing the spacer 10 is added. First, a black body (conductor) 5b was formed, and a phosphor 5a of each color was applied to a gap between the black body 5b and the phosphor film 5 was formed. As the material of the black stripe (black body 5b), a material mainly containing graphite, which is generally used, was used. A slurry method was used for applying the phosphor 5a to the glass substrate 4.

The metal back 6 provided on the inner surface side (electron source side) of the fluorescent film 5 is subjected to a smoothing process (usually called filming) of the inner surface of the fluorescent film 5 after the fluorescent film 5 is formed. Then, Al was formed by vacuum evaporation. The face plate 7 may be provided with a transparent electrode on the outer surface side (between the glass substrate and the fluorescent film) of the fluorescent film 5 in order to further enhance the conductivity of the fluorescent film 5, but in this embodiment, only the metal back is provided. Was omitted because sufficient conductivity was obtained.

The spacer 10 is formed on an insulating base material 10a (3.8 mm in height, 200 μm in thickness, 40 mm in length) made of purified soda lime glass, and a Na block layer 10
As b, a silicon nitride film having a thickness of 0.5 μm was formed, and a nitride compound film 10c of chromium and silicon was formed thereon by a vacuum film forming method.

The nitride compound film of chromium and silicon used in this example was formed by simultaneously sputtering targets of chromium and silicon in a mixed atmosphere of argon and nitrogen using a sputtering apparatus.

FIG. 13 shows a sputtering apparatus. In FIG. 13, reference numeral 41 denotes a film forming chamber, reference numeral 42 denotes a spacer member, reference numerals 43 and 44 denote targets of chromium and silicon, and reference numerals 45 and 4.
7 is a high-frequency power supply for applying a high-frequency voltage to the targets 43 and 44, 46 and 48 are matching boxes, and 49 and 50 are introduction pipes for introducing argon and nitrogen.

The back pressure of the sputtering chamber is 2 × 10^-Five
Pa. At the time of sputtering, N _TwoThe partial pressure is 15%
Ar and N_TwoWas flowed. Spatter
The total pressure was 0.50 Pa. The device is 5 inches large
With a target of
The separation was 120 mm.

Insulating substrate 1 made of soda lime glass
Oa was fixed to the substrate holder using a heat-resistant tape or a fixing jig. The substrate heat deposition up to 350 ° C. may be performed to improve the film quality. However, in Example 1, the substrate was not heated.

A high frequency power of 500 W was applied to a silicon target and a high power of 35 W was applied to a chromium target, and a chromium and silicon nitride film having a thickness of 200 nm was formed in 50 minutes. At this time, a silicon target was used, but a silicon nitride target may be used. Even when a silicon nitride target is used, by changing the power applied to the chromium target and the silicon nitride target, the composition and the film thickness can be adjusted to obtain desired values.

The specific resistance of the nitride film of chromium and silicon was 8.00 × 10 ⁴ Ωcm, and the temperature coefficient of resistance was −0.3%.

In the analysis of the surface composition of the film, the composition of each constituent element and the surface nitriding ratio were calibrated by using the following apparatus.

An apparatus equipped with an Ar sputter etch mechanism, a RHEED (reflection high-speed electron diffraction pattern measurement mechanism) and an XPS (X-ray photoelectron spectroscopy analysis mechanism) is used in the same vacuum chamber maintaining a high vacuum of 10 ⁻⁸ Pa or more. did. The Cr and silicon nitride film 10c formed as described above was set in this analyzer, and it was confirmed that a Cr and silicon nitride film was formed by the RHEED method. Thereafter, an XPS measurement was performed.

At this time, the Si 2p spectrum and N
The surface composition of the chromium and silicon nitride film was calibrated using the peak area ratio of the 1s spectrum.

Ratio of chromium element and silicon element "chromium" /
“Silicon” was 0.11. The chromium element is almost an oxide on the surface, but silicon is a mixture of nitride and oxide, and the ratio of existing as nitride (“silicon nitride” / “silicon nitride + silicon oxide”) is 0.90. Met.

Next, the spacer 10 of the first embodiment is
An electrode 11 made of Al was provided at the connection portion to ensure the connection with the directional wiring or the metal back.

The electrodes 11 completely covered the four surfaces of the spacer 10 exposed in the envelope 8 within a range of 200 μm from the X-direction wiring toward the face plate and 200 μm from the metal back toward the rear plate.

Here, 500 V is applied to both ends of the electrode 11 made of Al.
Was applied, the current flowing through the spacer 10 was measured, and the spacer resistance was measured to be 3.4 × 10 ⁸ ohms. The spacers 10 on which the nitride films 10c of chromium and silicon were formed were fixed on the X-directional wiring 9 at equal intervals.

Thereafter, the face plate 7 was disposed 3.8 mm above the electron source 1 via the support frame 3, and the joint between the rear plate 2, the face plate 7, the support frame 3 and the spacer 10 was fixed.

The joint between the rear plate 2 and the support frame 3 and the joint between the face plate 7 and the support frame 3 are coated with frit glass (a conductive frit is used for the joint between the spacer and the face plate) and air. Sealing was performed by baking at 430 ° C. for 10 minutes or more.

After this sealing treatment, the nitride film 1 of chromium and silicon
The specific resistance value of 0c was 2.0 × 10 ⁵ ohm cm, which was about twice as large. This is considered to be due to relaxation of the structure of the film due to heating, chromium element being oxidized and detached from the film.

After the experiment of this embodiment, the spacer 10
Was partially removed, and the surface composition of the chromium and silicon nitride film 10c was analyzed.

Ratio of chromium element and silicon element "chromium" /
“Silicon” is 0.11, “Chrome” / “Silicon” before sealing
Were almost the same.

Although chromium is almost an oxide on the surface, silicon has a mixture of nitride and oxide, and the surface nitridation ratio (“silicon nitride” / “silicon”) has been reduced to 0.72. .

The surface analysis values are the same as those obtained after a chromium and silicon nitride film after sputtering formation (as deposited; as deposited means after film formation) is subjected to a baking treatment at a sealing temperature of 430 ° C. for 10 minutes or more. Was almost the same as the value (annealing value) obtained by performing the surface analysis.

The spacer 10 uses the conductive frit glass containing silica spheres coated with Au on the black conductive material 5b (line width 300 μm) on the face plate 7 side, so that conduction between the charge relaxation film and the face plate is achieved. Secured.

The atmosphere in the envelope 8 completed as described above is exhausted by a vacuum pump through an exhaust pipe, and after a sufficient degree of vacuum is reached, the outer terminals Dx1 to Dxm and Dy1 to Dx1
A voltage was applied between the device electrodes 14 and 15 of the electron-emitting device 1 through yn, and the electron-emitting portion 18 was formed by conducting (forming) the electron-emitting portion forming thin film 16. The forming process was performed by applying a voltage having a waveform shown in FIG.

Next, acetone was passed through the exhaust pipe for 1 mTorr.
r into the vacuum container, and terminals Dx1 to Dx1 outside the container.
An energization activation process for depositing carbon or a carbon compound was performed by periodically applying a voltage pulse to Dxm and Dy1 to Dyn. The energization was activated by applying a waveform as shown in FIG.

Next, while heating the whole container to 200 ° C.,
After evacuating for 0 hour, the envelope was sealed by heating the exhaust pipe with a gas burner at a degree of vacuum of about 10 ⁻⁶ Torr.

Finally, gettering was performed to maintain the degree of vacuum after sealing.

In the image forming apparatus completed as described above, each electron-emitting device 1 has external terminals Dx1 to Dx
m, the scanning signal and the modulation signal are applied from the signal generating means (not shown) through Dy1 to Dyn, respectively, to emit electrons. The metal back 6 is applied with a high voltage through the high voltage terminal Hv to accelerate the emitted electron beam. And
An image was displayed by causing electrons to collide with the phosphor film 5 to excite and emit light from the phosphor. The voltage Va applied to the high voltage terminal Hv was 1 kV to 5 kV, and the voltage Vf applied between the device electrodes 14 and 15 was 14 V.

Table 1 shows the resistance value and performance of the charge relaxation film 10c for the spacer 10. The measurement was performed in each step before assembling, after sealing to the face plate, after sealing to the rear plate, after evacuation, after element electrode energization treatment, and the like.

As described above, the specific resistance before the incorporation was 8 × 10 ⁴ Ωcm, and the specific resistance after the sealing treatment was 2 × 10 ^5.
Ωcm. Furthermore, the specific resistance after evacuation further increased to 4 × 10 ⁶ Ωcm, but was stable without change in the subsequent steps.

This indicates that the nitride film of chromium and silicon is stable and can be used as a charge relaxation film.

With respect to the spacer of the first embodiment, a two-dimensional array of light emitting spots including light emitting spots generated by electrons emitted from the electron-emitting device 1 located close to the spacer is formed two-dimensionally at equal intervals. A good color image could be displayed. This means that even if the spacer 10 is provided, no disturbance of the electric field which affects the electron trajectory occurs, and the spacer 1
This indicates that no charging of 0 has occurred.

The temperature coefficient of resistance of the present material is -0.3% even after being incorporated in the image display device, and Va = 5 k
There was no thermal runaway in V. (Embodiment 2-Embodiment 7) Embodiment 2-7 is an embodiment in which the sputtering power of the chromium target is changed and the chromium content of the chromium and silicon nitride films is changed.

[0138] Just like in the first embodiment, the conductive film 10c
As a result, a nitride film of chromium and silicon was formed. However, Table 1
As shown in the figure, the sputtering power to the chromium target is
The power was changed from 24 W to 45 W. As a result, the chromium / silicon element ratio of the nitride film after the sealing annealing treatment was 0.07.
To 0.16.

After the formation of the conductive film 10c, the color image was displayed in a built-in image forming apparatus in the same manner as in Example 1, and the disturbance of the image near the spacer was examined.

Table 1 summarizes the results of measurements on the spacers 10 of the examples. In Table 1 and Tables 2 to 8 described below, aE + b (a and b are arbitrary numbers) means a × 10 ^b (for example, 8.0E + 04 is 8.0 × 10 ^4).
), AE-b (a and b are arbitrary numbers) is a × 1
0- ^b (for example, 8.0E-04 means 8.0 × 10 ^-4 ).

[0141]

[Table 1] Example 1 Example 7, a total pressure 0.5 Pa, is obtained by fixing the pressure ratio N ₂ minutes 0.15.

When the sputtering power for the chromium target is increased, the chromium concentration of the chromium and silicon nitride film increases, and the specific resistance value decreases.

When the element ratio of chromium / silicon after the sealing annealing in Example 2 was 0.07, the specific resistance exceeded 10 ⁷ Ωcm, the charging of the nitride film became large, and the image disorder near the spacer was noticeable. Become like Further, when the element ratio of chromium / silicon in Example 7 was 0.16, the specific resistance value was 10 ⁴ Ωcm, an overcurrent flowed through the nitride film of chromium and silicon, thermal runaway occurred, and a high voltage could be applied. lost.

In addition, the chromium and silicon nitride films of Examples 2 to 7 were oxidized on the surface by the annealing treatment.
Since the chromium oxide and the silicon oxide were generated, the specific resistance of the conductive film 10c was increased about five times by the oxidation.

In addition, when the assembled image forming apparatus is evacuated to vacuum, the specific resistance of the conductive film 10c is further increased to 1 at the maximum.
It was about an order of magnitude higher. In the subsequent steps, it was stable with almost no change. From this, it is understood that the nitride film of chromium and silicon has excellent heat resistance and process stability. However, the surface nitriding rate of silicon (“silicon nitride” / “silicon nitride + silicon oxide”)
Is reduced by the annealing treatment, and in the chromium and silicon nitride film, the higher the amount of chromium, the higher the surface nitridation rate after the annealing treatment. (The analysis values in the annealing section in Table 1 were obtained by assembling the image forming apparatus, removing the spacer 10 after driving, and analyzing the surface of the conductive film 10c.) (Examples 8 to 14) In Examples 8 to 14, the nitrogen partial pressure ratio was fixed at 0.2, and the total pressure was 0.15 Pa to 1.15.
This is an example in which the pressure is changed to 5 Pa.

Table 2 summarizes the results of measurements on the spacers 10 of the examples.

[0147]

[Table 2] When the total pressure is increased, the specific resistance of the nitride film of chromium and silicon is slightly increased even at the same partial pressure of nitrogen. However, as the total pressure increases, the surface nitriding rate of silicon nitride tends to decrease slightly. In particular, the total pressure of Examples 13 and 14 was 1.0 Pa and 1.
At 5 Pa, the surface nitridation rate after the annealing treatment is remarkably reduced, the charging of the nitride film becomes large, and the disturbance of the image near the spacer becomes noticeable.

In the image forming apparatus incorporating the spacer 10 of Example 14, image disturbance (shadow) near the spacer due to charging was observed.

This is due to the fact that the surface nitriding rate of silicon nitride has decreased, the charge removal ability of the nitride film of chromium and silicon has decreased, and the specific resistance has become too large.

In addition, changing the total pressure greatly changed the film stress. The total pressures of Examples 8 and 9 were 0.15 Pa and 0.15 Pa.
At 3 Pa, a good nitriding rate was shown after annealing, but film peeling occurred due to stress (compression). However, Example 1
When the total pressure was from 0 to 0.4 Pa or more in Example 14, film peeling did not occur.

From the above, it is preferable that the appropriate condition of the total pressure in which the image is not disturbed near the spacer and the film peeling does not occur is in the range of 0.4 Pa to 1.0 Pa. (Example 15-Example 22) Example 15-Example 22
Is an example in which the total pressure is fixed at 0.5 Pa and 0.8 Pa, and the nitrogen partial pressure ratio is changed from 0 to 1.0.

Table 3 summarizes the results of measurements on the spacers 10 of the examples.

[0153]

[Table 3] At a nitrogen partial pressure of 0 in Example 15, a pure silicon film was formed, and high voltage could not be applied due to low resistance.

The total pressure of Example 15 to Example 18 was 0.5 P
When the nitrogen partial pressure is increased at a fixed value of a, the specific resistance value is slightly increased with the increase of the nitrogen partial pressure. Example 19
When the nitrogen partial pressure was increased with the total pressure fixed at 0.8 Pa in Example 22, the specific resistance value was slightly increased with the increase in the nitrogen partial pressure.
Get higher.

In Example 16, the nitrogen partial pressure was slightly lower than 0.02.
Even at Pa, it becomes a silicon nitride film and has a predetermined resistance value. The relationship between the surface nitridation rate and the nitrogen partial pressure was as shown in Examples 19 to 22.
When the nitrogen partial pressure is increased beyond 0.1, the surface nitridation rate of silicon nitride slightly decreases at the same total pressure, but changes the total pressure (the surface nitridation rate decreases as the total pressure increases). ) Did not drop as much as it did.

The relationship between the nitrogen partial pressure and the film peeling was shown in Example 21.
When the nitrogen partial pressure is 0.5 Pa or more as in Example 22, film peeling occurs, and when the nitrogen partial pressure becomes 0.4 Pa or less as in Examples 15 to 20, film peeling does not occur. The film peeling was improved as the nitrogen partial pressure became lower.

As described above, the condition of the nitrogen partial pressure at which the film does not peel off is preferably 0.5 Pa or less, more preferably 0.4 Pa or less. (Examples 23 and 24) Examples 23 and 24
Is an example in which the total pressure was fixed at 0.45 Pa and the nitrogen partial pressure ratio was fixed at 0.45, and the presence or absence of substrate heating during film formation was compared.

Table 4 summarizes the results of measurements on the spacers 10 of the examples.

[0159]

[Table 4] In Example 24, the substrate was heated to 200 ° C., but the surface nitridation rate of the as-deposited film was slightly lower than in Example 23 in which the substrate was not heated, but after passing through the sealing heat process (annealing). Hardly change the value of the nitriding ratio. There was no difference in specific resistance depending on whether the substrate was heated or not, and no significant change occurred depending on whether the substrate was heated. (Example 25-Example 29) Example 25-Example 29
Is an example in which the total pressure is fixed at 0.45 Pa and the nitrogen partial pressure ratio is fixed at 0.15, and the back pressure of the sputtering chamber is changed to form a film.

Table 5 summarizes the results of measurements on the spacers 10 of the examples.

[0161]

[Table 5] The higher the back pressure of the sputtering chamber (the lower the degree of vacuum), the lower the surface nitridation rate. This is because the higher the back pressure, the more the oxidation of the as-deposited film occurs due to the moisture remaining in the chamber and the oxygen gas. Furthermore, the higher the back pressure is, the more the surface nitridation rate after passing through the sealing heat process is significantly reduced. In particular, Example 25
Has a back pressure of 5 × 10 ⁻³ Pa, and the surface nitridation rate of the as-deposited film was 74%, whereas the post-annealing was 52%.
Has dropped. In the image forming apparatus incorporating the spacer 10 of Example 25, the surface nitridation rate was significantly reduced, so that the charge removal ability of the nitride film of chromium and silicon was insufficient, and image disturbance (shadow) near the spacer due to charging was observed.

From the above, it is desirable to form a film under a back pressure of less than 5 × 10 ⁻³ Pa. (Examples 30-32) Examples 30-32
Fixed the total pressure at 0.6 Pa and the nitrogen partial pressure ratio at 0.5,
This is an embodiment in which the power of the RF bias applied to the substrate is changed.

Table 6 summarizes the results of measurements on the spacers 10 of the examples.

[0164]

[Table 6] The bias power to the substrate is 0W, 100W, 200W
Was changed. As a result, the element ratio of chromium / silicon in the nitride film changed from 0.11 to 0.13. As the power of the RF bias applied to the substrate increases, the chromium concentration of the nitride film of chromium and silicon decreases, and the specific resistance value slightly increases.
Get higher.

In relation to the surface nitriding ratio, the surface nitriding ratio decreases as the bias power increases.

Further, in relation to the film stress, the larger the bias power, the smaller the film stress. (Example 33-Example 41) Example 33-Example 41
Is an embodiment in which the thickness of the nitride film 10c of chromium and silicon is changed.

Table 7 summarizes the results of measurements on the spacers 10 of the examples.

[0168]

[Table 7] In Examples 33 to 35, the total pressure was fixed at 0.5 Pa, the nitrogen partial pressure ratio was fixed at 0.2, and the thicknesses of the chromium and silicon nitride films were changed to 300, 1000, and 2000 °, respectively. Because the total pressure was as high as 0.5 Pa and the nitrogen partial pressure ratio was as low as 0.2 and the film was hardly peeled, film peeling did not occur even if the film thickness was changed as described above.

The relationship with the specific resistance was such that the specific resistance slightly decreased as the film thickness increased.

The relationship with the surface nitriding ratio is such that as the film thickness increases,
Although it tends to be higher, it is 0.7 to 0.1 for the as-deposited film.
86, which was as low as 0.62 to 0.76 after annealing.

Example 36-Example 38 shows that the total pressure is 0.3 P
a, The nitrogen partial pressure ratio was fixed at 0.3, and the thicknesses of the chromium and silicon nitride films were changed to 300, 1000, and 2000 °, respectively. The total pressure was set as low as 0.3 Pa, and the nitrogen partial pressure ratio was set as high as 0.3. Since the film was easily peeled off, the film was peeled off at a film thickness of 2000 ° in Example 38.

The relationship with the specific resistance is shown in Examples 33 to 35.
Similarly, as the film thickness increased, the specific resistance slightly decreased.

The relationship with the surface nitriding ratio is such that as the film thickness increases,
Although it tended to be higher, the value was 0.85 to 0.93 for the as-deposited film and 0.72 to 0.8 after annealing, which was higher than Examples 33 to 36.

Example 39-Example 41 used a total pressure of 0.15
Pa, the nitrogen partial pressure ratio were fixed at 0.15, and the thicknesses of the chromium and silicon nitride films were 300, 1000, and 2000, respectively.
Was changed. The total pressure was set as low as 0.15 Pa, and the nitrogen partial pressure ratio was set as low as 0.15. Example 33-
Since it was lower than that of Example 38, film peeling was more likely to occur. At the film thicknesses of 1000 ° and 2000 ° in Examples 40 and 41, film peeling occurred. At the film thickness of 300 ° in Example 39, no film peeling occurred.

The relationship with the specific resistance is shown in Examples 33 to 38.
Similarly, as the film thickness increased, the specific resistance slightly decreased.

The relationship with the surface nitriding ratio is such that as the film thickness increases,
However, the as-deposited film had a tendency to increase from 0.9 to 0.1.
92, which changed from 0.85 to 0.88 after annealing, which was a higher value than Examples 33 to 38.

Embodiment 33 to Embodiment 37 and Embodiment 39
In the image forming apparatus in which the spacer 10 was incorporated, there was no image disturbance (shadow) near the spacer due to charging, and a good static elimination ability was exhibited. On the other hand, in the spacers of Example 38 and Examples 40 to 41 in which the film was peeled off, there was no image disturbance near the spacers in the areas where the film was not peeled off, and good charge eliminating ability was exhibited.

As described above, when the total pressure during film formation and the partial pressure of nitrogen are changed, the conditions under which the surface nitridation rate is high (the charge removal ability is high), for example, the conditions under which the total pressure is low, are set. When it is set, the nitride film has a property of easily causing film peeling.

When a condition with a high surface nitriding rate is set, it is not necessary to forcibly increase the film thickness. At this time, the film thickness is reduced. For example, when the angle is set to 300 °, film peeling can be suppressed. Embodiments 42 and 43 Embodiments 42 and 43 are embodiments in which a nitride film 10c of chromium and silicon is laminated.

Table 8 summarizes the results of measurements on the spacers 10 of the examples.

[0181]

[Table 8] In Example 42 and Example 43, a silicon nitride film was formed to a thickness of 0.5 μm on the insulating base material 10a, then a second layer of chromium and silicon nitride films was provided, and a first layer of chromium and silicon was further formed. A nitride film was provided to form a laminated structure.

The first layer of chromium and silicon nitride films provided on the outermost surface of the spacer is liable to peel off under the conditions used in Examples 22 and 39. That is, in the nitride film of Example 22, since the nitrogen partial pressure was high, the film was actually peeled at a film thickness of 2000 °. Further, since the total pressure was low in the nitride film of Example 39, film peeling actually occurred at a film thickness of 2000 °. However, since the nitride films of Examples 22 and 39 have a high surface nitridation rate and a high static elimination ability, the conditions for forming the first nitride film are set to those of Examples 22 and 3.
By using the film formation conditions of No. 9, the film thickness is provided as a thin film that does not cause film peeling, and the second nitride film is a film with good stability that does not cause film peeling (for example, in Examples 1 and 34). Nitride film) with a sufficient film thickness. For example, in Example 42, 2
000 °, and in Example 43, 1000 °.

By using such a laminated structure,
For example, charges charged in the first layer on the outermost surface could be released through the second layer. Further, it has become possible to prevent the diffusion of alkali ions from the insulating base material 10a into the first layer.

In the image forming apparatus incorporating the spacers 10 of Examples 42 and 43, there was no image disturbance (shadow) near the spacers due to charging, and a good charge removing ability was exhibited. Furthermore, even after a long operation, there was no change in the characteristics, and the result was good. (Examples 44 to 47) In Examples 44 to 47, the total pressure of the sputtering gas, the partial pressure of nitrogen, and the film thickness were fixed, and the transition metal of the transition metal and the transition metal of the silicon nitride film were changed to Cr, respectively.
This is an embodiment in which the resistances are made uniform in place of i, Ta, Mo, and W.

Table 9 summarizes the results of measurements on the spacers 10 of the examples.

[0186]

[Table 9] Just as in the first embodiment, the conductive film 10c is made of Cr
And nitrided films of Ti, Ta, Mo, W and silicon were formed respectively.

After forming the respective conductive films 10c, they are incorporated in the image forming apparatus in the same manner as in Embodiment 1 to display a color image.
The image disorder near the spacer was examined.

Embodiment 44-Table 9 shows the resistance value and performance of the charge relaxation film 10c for the spacers 10 of Embodiment 47. Measured in each process such as before assembly, after sealing to the face plate, after sealing to the rear plate, after evacuation, after energization of the device electrode, and almost the same resistance value behavior as in Example 1 throughout the entire process. Met. This is because the transition metals Ti, Ta, Mo, and W are the same as Cr in Example 1.
This indicates that the silicon nitride film is very stable and is suitable as a charge relaxation film.

Embodiment 44-Electrostatic Relaxation Film 10 of Embodiment 47
c was incorporated into an image forming apparatus as a spacer 10, a color image was displayed, and disturbance of an image near the spacer was examined.

Embodiments 44-47 In the spacers of Embodiments 47 and 47, a two-dimensional array of light-emitting spots is formed at equal intervals, including light-emitting spots generated by the electrons emitted from the electron-emitting devices 1 located close to the spacers. A color image with good color reproducibility could be displayed. This indicates that even if the spacer 10 is provided, no disturbance of the electric field affecting the electron trajectory occurs, and the spacer 10 is not charged.

When the surface was analyzed by XPS (X-ray photoelectron spectroscopy) with each spacer removed, Ti, Ta, Mo, and W were oxides on the surface.
The surface nitridation rate of silicon (“silicon nitride” / “silicon nitride + silicon oxide”) was 0.83 to 0.95. This value is the value of Ti, Ta, Mo, W after sputtering formation (as deposited).
After the silicon nitride film was subjected to a baking treatment at a sealing temperature of 430 ° C. for 10 minutes or more, the surface analysis was almost the same. From this, the transition metals are Ti,
This shows that even if the types are changed to Ta, Mo, and W, there is no effect on the stability of the specific resistance and the decrease in the surface nitriding ratio. The temperature coefficient of resistance of this material (Example 44 to Example 47) is from -0.3% to -0.6%.
No thermal runaway was observed even at a = 5 kV.

[0192]

As described above, according to the charge-relaxation film of the present invention, the fluctuation of the resistance value is small even in an atmosphere such as oxygen, and it is not necessary to form an island or to make it extremely thin even when the resistance is increased. Therefore, it is possible to form a charge relaxation film having excellent stability and reproducibility. In addition, it has the advantage of being excellent in stability because of its high melting point and high hardness. Furthermore, since silicon nitride is an insulator and transition metal nitride is a good conductor, any specific resistance can be obtained by adjusting the composition.
In addition to the devices described in the embodiments of the present application, the charge relaxation film of the present invention can be used for an electron tube such as a CRT or a discharge tube. it can.

According to the image forming apparatus of the present invention, a nitride compound film of a transition metal and silicon is used as a charge relaxation film on the surface of the insulating member disposed between the element substrate and the face plate, thereby reducing the assembling process. There is almost no change in the resistance value inside, and a stable resistance value can be obtained. This suppresses disturbance of the beam potential near the spacer,
A position shift between the position where the beam collides with the phosphor and the phosphor which should originally emit light is prevented, and a loss of luminance can be prevented, and a clear image can be displayed.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view near a spacer of an image forming apparatus of the present invention.

FIG. 2 is a perspective view of the image forming apparatus according to the embodiment of the present invention, in which a part of a display panel is cut away.

FIG. 3 is a schematic sectional view of a spacer used in the present invention.

FIG. 4 is a plan view illustrating a phosphor array of a face plate of the display panel.

FIG. 5 is a plan view and a cross-sectional view of a substrate of the multi-electron beam source.

FIG. 6 is a process chart of forming a planar surface conduction electron-emitting device.

FIG. 7 is a waveform diagram of a forming application pulse of an electron beam source.

FIG. 8 is an applied pulse waveform diagram in an energization activation step.

FIG. 9 is a sectional view of a vertical surface conduction electron-emitting device.

FIG. 10 is a schematic diagram of current-voltage characteristics of a surface conduction electron-emitting device.

FIG. 11 is a simple matrix wiring diagram.

FIG. 12 is a sectional view of a planar surface conduction electron-emitting device.

FIG. 13 is a schematic configuration diagram of a sputtering apparatus.

FIG. 14 is a schematic cross-sectional view of a display using a number of minute electron sources.

FIG. 15 is a perspective view showing another form of the spacer used in the present invention.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 electron source (electron emitting element) 2 rear plate 3 side wall (support frame) 4 glass substrate 5 fluorescent film 6 metal back 7 face plate 8 envelope 9 X-direction wiring 10 spacer 10a insulating base material 10b Na block layer 10c electrification Relaxing film 11 Electrode 12 Y-direction wiring 13 Substrate 14, 15 Device electrode 16 Conductive thin film 17 Electron emission section 18 Thin film formed by current activation processing 19 Forming power supply 20 Ammeter 21 Activation power supply 22 To capture emission current Ie Anode electrode 23 DC high-voltage power supply 24 Ammeter 25 Substrate 26, 27 Device electrode 28 Step forming member 29 Conductive thin film using fine particle film 30 Electron emission portion formed by energization forming process 31 Thin film formed by energization activation process

 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Yoichi Osato 3-30-2 Shimomaruko, Ota-ku, Tokyo F-term in Canon Inc. (reference) 5G067 AA55 CA02 DA02

Claims (20)

[Claims] 1. A charge relaxation film comprising a nitride compound of a transition metal and silicon obtained by sputtering a target of a transition metal and silicon or silicon nitride. 2. The charge relaxation film according to claim 1, wherein the transition metal is at least one selected from chromium, titanium, tantalum, molybdenum, and tungsten. 3. The silicon nitride compound of the transition metal and silicon has a surface nitrogenation ratio (“silicon nitride” / “silicon”) of 60.
% Or more. 4. A method for forming a charge relaxation film, comprising forming a charge relaxation film having a nitride compound of a transition metal and silicon by sputtering a target of a transition metal and silicon or silicon nitride. . 5. When a transition metal and silicon target is sputtered to form a transition metal and silicon nitride compound film, argon and nitrogen are used as sputter gases, and a specific resistance of the transition metal and silicon nitride compound film is used. A value is set by controlling the total pressure of the sputtering gas and the partial pressure of nitrogen to be larger or smaller. 6. The method of claim 5, wherein the partial pressure of nitrogen is 50% of the total pressure of the sputtering gas.
A method for forming a charge-relaxation film. 7. The method for forming a charge relaxation film according to claim 5, wherein the total pressure of the sputtering gas is 0.4 Pa or more and 1.0 Pa or more.
A method for forming a charge relaxation film, wherein the pressure is set to Pa or less. 8. When a transition metal and silicon target is sputtered to form a transition metal and silicon nitride compound film, the back pressure of the chamber is evacuated to 1.0 × 10 ⁻³ Pa or less. Method for forming a charge relaxation film. 9. An image forming apparatus including an electron emitting element, an image forming member, and a spacer in an envelope,
The image forming apparatus according to claim 1, wherein the spacer is a spacer having a charge relaxation film according to claim 1 on a surface of a base material. 10. The charge relaxation film has a thickness of 10 nm to 10 nm.
Within the range of 1 μm, the specific resistance is within the range of 10 ⁻⁷ × Va ² to 10 ⁵ Ωm when the accelerating voltage of the emitted electrons is Va, and the absolute value has a negative temperature coefficient of resistance of 1% or less. Item 10. The image forming apparatus according to Item 9. 11. The image forming apparatus according to claim 9, wherein the substrate is a substrate containing Na, and has an Na block layer between the substrate and the coating of the nitrogen compound. 12. The image forming apparatus according to claim 9, wherein the spacer is connected to an electrode member disposed in the envelope. 13. The image forming apparatus according to claim 12, wherein said electrode member is an electrode for applying a drive voltage to said electron-emitting device. 14. The image forming apparatus according to claim 12, wherein the electrode member is an electron accelerating electrode provided on the image forming member. 15. The image forming apparatus according to claim 9, wherein a voltage is applied to both ends of the spacer so that a potential difference occurs between both ends. 16. The image forming apparatus according to claim 9, wherein said spacer is connected to an electrode for applying a driving voltage to said electron-emitting device and an emitted electron accelerating electrode provided on said image forming member. apparatus. 17. The image forming apparatus according to claim 9, wherein said electron-emitting device is a cold cathode type electron-emitting device. 18. The image forming apparatus according to claim 17, wherein said electron-emitting device is a surface conduction electron-emitting device. 19. A method for manufacturing an image forming apparatus including an electron-emitting device, an image-forming member, and a spacer in an envelope, wherein the surface of the base material according to claim 1 is relaxed. Forming the spacer by covering the film, and after disposing the spacer, the electron-emitting device, and the image forming member in the envelope, setting the envelope to a non-oxidizing atmosphere, and sealing the envelope. A method for manufacturing an image forming apparatus, comprising the steps of: 20. The method according to claim 19, wherein the non-oxidizing atmosphere is a nitrogen atmosphere.