CN1212673C - Built-in protective P-type high-voltage MOS transistors - Google Patents
Built-in protective P-type high-voltage MOS transistors Download PDFInfo
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- CN1212673C CN1212673C CN 03112625 CN03112625A CN1212673C CN 1212673 C CN1212673 C CN 1212673C CN 03112625 CN03112625 CN 03112625 CN 03112625 A CN03112625 A CN 03112625A CN 1212673 C CN1212673 C CN 1212673C
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Abstract
The present invention discloses a built-in protective P-shaped high-voltage metal oxide transistor which comprises a P-shaped substrate, an N-shaped extension contact hole, a source, a leak, a field oxidating layer and a polycrystalline grid are arranged above the P-shaped substrate, wherein the lower part of the polycrystalline grid is provided with a grid oxidating layer, and oxidating layers are arranged above the N-shaped extension contact hole, the source, the leak, the field oxidating layer and the polycrystalline grid. The lower parts of the leak and the field oxidating layer are provided with P-shaped drift regions, the N-shaped extension contact hole and the source are provided with aluminum leading wires, and the polycrystalline grid and the leak are respectively provided with aluminum leading wires. N-shaped impurity regions are arranged among the N-shaped extension contact hole, the source, the P-shaped drift regions and the P-shaped substrate and are positioned at the lower part of the end of the polycrystalline grid, and N-shaped protective traps are arranged at the lower surfaces of the field oxidating layers and are positioned in the P-shaped drift regions. The N-shaped protective traps are introduced by the present invention, can increase the curvature radius of an electric field of the end of the polycrystalline grid, reduce electric field aggregation caused by the potential jump of the end of the polycrystalline grid, and thereby, the breakdown voltage of a device is improved.
Description
One, technical field
The present invention is a kind of built-in protection P type high-voltage metal oxide semiconductor pipe, the built-in protection P type high-voltage metal oxide semiconductor pipe that especially can use in integrated circuit.
Two, background technology
It is good that the MOS type power IC device has switching characteristic, advantages such as power consumption is little, what is more important MOS type power device is easy to compatibility standard low pressure metal oxide semiconductor technology, reduce production cost of chip, therefore the MOS type power IC device has absolute predominance in the range of application of 10V-600V, in the 100V operating voltage, adopt the body silicon materials to have advantages such as cost is low, but more than 100V, the body silicon materials can't meet design requirement, therefore epitaxial material will become first-selection, adopt epitaxial material can satisfy 1000V with interior operating voltage requirement.Continuous expansion just because of the related application field, multiple structure has appearred in high voltage p-type metal oxide semiconductor (HVPMOS) type device, particularly the field plate structure has obtained using widely, but the field plate structure has also been brought a problem, be exactly very high, limited the further raising of high voltage p-type metal oxide semiconductor (HVPMOS) device electric breakdown strength at the electric field of field plate end.Certain structures and actual fabrication technology disconnect simultaneously, compatible very poor, be difficult for being integrated in the high-voltage power integrated chip, the present invention will provide a kind of peak value electric field that both can reduce high voltage p-type metal oxide semiconductor (HVPMOS) device field plate end, improve puncture voltage and and the compatible fully high voltage p-type metal oxide semiconductor (HVPMOS) device of standard low pressure metal oxide semiconductor processing, be easy to be integrated in the extensive high-voltage power integrated chip, reduced the cost of large-scale production.
Three, technology contents
Technical problem the invention provides and a kind ofly can improve puncture voltage and the built-in protection P type high-voltage metal oxide semiconductor pipe compatible mutually with standard low pressure epitaxial metal oxide semiconductor technology.
A kind of built-in protection P type high-voltage metal oxide semiconductor pipe of technical scheme; comprise P type substrate 1; above P type substrate 1, be provided with N type extension contact hole 2; source 3; leak 4; field oxide 5 and polycrystalline grid 6; gate oxide 7 is arranged below polycrystalline grid 6; at N type extension contact hole 2; source 3; leak 4; there is oxide layer 8 top of field oxide 5 and polycrystalline grid 6; below leakage 4 and field oxide 5, be provided with P type drift region 12; in N type extension contact hole 2 and source 3; be respectively equipped with aluminum lead 9 in polycrystalline grid 6 and the leakage 4; 10 and 11; at N type extension contact hole 2; be provided with N type impurity range between source 3 and P type drift region 12 and the P type substrate 1; being positioned at the terminal below of polycrystalline grid 6 and being provided with the N type below field oxide 5 protects trap 13 and this N type protection trap 13 to be positioned at P type drift region 12; so-called N type protection trap is a kind of zone of the N of mixing type impurity, and its concentration is higher than the p type impurity concentration of periphery.
Beneficial effect (1) the present invention has introduced the N type and has protected trap, and N type protection trap can increase the electric field radius of curvature of polycrystalline grid end, the electric field gathering that reduction causes owing to the terminal potential jump of polycrystalline grid, thereby has improved device electric breakdown strength.(2) when closing off-state because N type protection trap potential is opposite with polycrystalline grid field plate current potential, N type protection trap has formed the space charge depletion region, thereby has reduced the surface field intensity between silicon and the field oxygen, effectively prevents surface breakdown herein.(3) because N type of the present invention protection trap can be based on realizing on the standard extension low pressure metal oxide semiconductor processing line, so the present invention has low cost of manufacture, but advantages such as industrialization.(4) technical measures of N type extension of the present invention can provide better breakdown characteristics, can make puncture voltage greater than 200V, and operating current is more than 100MA.
Four, description of drawings
Fig. 1 is the structural representation of the embodiment of the invention.
Fig. 2 is the structural representation of another embodiment of the present invention.
Five, specific embodiments
1 one kinds of built-in protection P type high-voltage metal oxide semiconductor pipes of embodiment; comprise P type substrate 1; above P type substrate 1, be provided with N type extension contact hole 2; source 3; leak 4; field oxide 5 and polycrystalline grid 6; gate oxide 7 is arranged below polycrystalline grid 6; at N type extension contact hole 2; source 3; leak 4; there is oxide layer 8 top of field oxide 5 and polycrystalline grid 6; below leakage 4 and field oxide 5, be provided with P type drift region 12; in N type extension contact hole 2 and source 3; be respectively equipped with aluminum lead 9 in polycrystalline grid 6 and the leakage 4; 10 and 11; at N type extension contact hole 2; be provided with N type impurity range between source 3 and P type drift region 12 and the P type substrate 1; be positioned at the terminal below of polycrystalline grid 6 and be provided with the N type below field oxide 5 and protect trap 13 and this N type protection trap 13 to be positioned at P type drift region 12, N type impurity range is a N type extension 14.
2 one kinds of built-in protection P type high-voltage metal oxide semiconductor pipes of embodiment; comprise P type substrate 1; above P type substrate 1, be provided with N type extension contact hole 2; source 3; leak 4; field oxide 5 and polycrystalline grid 6; gate oxide 7 is arranged below polycrystalline grid 6; at N type extension contact hole 2; source 3; leak 4; there is oxide layer 8 top of field oxide 5 and polycrystalline grid 6; below leakage 4 and field oxide 5, be provided with P type drift region 12; in N type extension contact hole 2 and source 3; be respectively equipped with aluminum lead 9 in polycrystalline grid 6 and the leakage 4; 10 and 11; at N type extension contact hole 2; be provided with N type impurity range 13 between source 3 and P type drift region 12 and the P type substrate 1; be positioned at the terminal below of polycrystalline grid 6 and be provided with the N type below field oxide 5 and protect trap 13 and this N type protection trap 13 to be positioned at P type drift region 12, N type impurity range is a N type trap 15.
Claims (3)
1; a kind of built-in protection P-type mos pipe; comprise P type substrate (1); be provided with N type contact hole (2) in the top of P type substrate (1); source (3); leak (4); field oxide (5) and polycrystalline grid (6); in the below of polycrystalline grid (6) gate oxide (7) is arranged; at N type contact hole (2); source (3); leak (4); there is oxide layer (8) top of field oxide (5) and polycrystalline grid (6); be provided with P type drift region (12) in the below of leaking (4) and field oxide (5); on N type contact hole (2) and source (3), be provided with aluminum lead (9); in polycrystalline grid (6) and leakage (4), be respectively equipped with aluminum lead (10; 11); it is characterized in that between " N type contact hole (2); source (3) and P type drift region (12) " and P type substrate (1), being provided with N type impurity range; above-mentioned N type contact hole (2) is used to contact N type impurity range, is positioned at the terminal below of polycrystalline grid (6) and is provided with the N type below field oxide (5) to protect trap (13) and this N type protection trap (13) to be positioned at P type drift region (12).
2, built-in protection P-type mos pipe according to claim 1 is characterized in that N type impurity range is a N type extension (14).
3, built-in protection P-type mos pipe according to claim 1 is characterized in that N type impurity range is a N type trap (15).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03112625 CN1212673C (en) | 2003-01-08 | 2003-01-08 | Built-in protective P-type high-voltage MOS transistors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03112625 CN1212673C (en) | 2003-01-08 | 2003-01-08 | Built-in protective P-type high-voltage MOS transistors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1424768A CN1424768A (en) | 2003-06-18 |
| CN1212673C true CN1212673C (en) | 2005-07-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03112625 Expired - Fee Related CN1212673C (en) | 2003-01-08 | 2003-01-08 | Built-in protective P-type high-voltage MOS transistors |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1212673C (en) |
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2003
- 2003-01-08 CN CN 03112625 patent/CN1212673C/en not_active Expired - Fee Related
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| Publication number | Publication date |
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| CN1424768A (en) | 2003-06-18 |
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