CN108198857A - A kind of silicon carbide MOSFET device structure cell of integrated convex block shape Schottky diode - Google Patents
A kind of silicon carbide MOSFET device structure cell of integrated convex block shape Schottky diode Download PDFInfo
- Publication number
- CN108198857A CN108198857A CN201711459799.0A CN201711459799A CN108198857A CN 108198857 A CN108198857 A CN 108198857A CN 201711459799 A CN201711459799 A CN 201711459799A CN 108198857 A CN108198857 A CN 108198857A
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- China
- Prior art keywords
- convex block
- block shape
- schottky diode
- mosfet
- silicon carbide
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 28
- 230000001413 cellular effect Effects 0.000 claims abstract description 10
- 238000002347 injection Methods 0.000 claims abstract description 8
- 239000007924 injection Substances 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 3
- 238000000407 epitaxy Methods 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000005457 optimization Methods 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- -1 RIE ion Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000009527 percussion Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a kind of silicon carbide MOSFET device structure cells of integrated convex block shape Schottky diode; it is integrated with convex block shape Schottky diode between the silicon carbide MOSFET device structure cell, and the MOSFET cellular P well area edges of the convex block shape Schottky diode both sides are provided with the deep injection region of P Plus and convex block shape Schottky diode is looped around centre protects.The application, when device works, plays fly-wheel diode by being integrated with convex block shape Schottky diode between MOSFET cellulars, improves the efficiency and reliability of circuit work, reduces circuit production cost.And convex block shape Schottky diode is when by backward voltage, the deep P Plus areas of both sides MOSFET can completely shelter Schottky bump region, so as to which convex block SBD be enable to bear higher pressure resistance, realize the device optimization design of high-voltage great-current.
Description
Technical field
The present invention relates to technical field of semiconductor device, and in particular to a kind of carbonization of integrated convex block shape Schottky diode
Silicon MOSFET element structure cell.
Background technology
SiC material becomes high performance power MOSFET because its good characteristic has powerful attraction in terms of high power
One of ideal material.SiC vertical powers MOSFET element mainly has the double diffusion DMOSFET of lateral type and vertical gate slot knot
The UMOSFET of structure, structure are as shown in Figure 1.DMOSFET structures employ planar diffusion technology, using refractory material, such as polycrystalline
Si-gate makees mask, with the Edge definition P base areas of polysilicon gate and N+ source regions.The title of DMOS is just derived from this double diffusion technique.
Surface channel region is formed using the side diffusion difference of p-type base area and n+ source regions.And the UMOSFET of vertical gate slot structure,
It is named derived from U-shaped groove structure.The U-shaped groove structure is formed using reactive ion etching in grid region.
The theoretical maximum operating voltage range of SiC base power devices is more than 10kV, higher than silicon substrate insulated gate bipolar crystal
Manage the operating voltage of (IGBT) device；As unipolar device, switching speed is faster than ambipolar silicon substrate IGBT, required extension
Layer is even more to reduce since SiC decuples the critical breakdown electric field of silicon substrate, is accordingly regarded as substituting the ideal of silicon substrate IGBT device
Selection.For controllable switch type power electronic devices such as：IGBT, metal oxide layer semiconductor field-effect transistor (MOSFET)
Deng in use, often with diode inverse parallel to play afterflow in circuit.Silicon substrate IGBT is usually will be antiparallel
Diode is encapsulated into power module simultaneously, and silicon substrate MOSFET is then since p-well and drift region naturally form two pole of inverse parallel
Pipe, therefore be not required to additionally increase diode encapsulation in parallel.
Although SiC base power MOSFET also has the anti-paralleled diode of self-assembling formation, due to the energy gap of SiC
Height, the cut-in voltage of PN junction diode is high, reaches 3V or so, when using the anti-paralleled diode inside SiC MOSFET,
The power consumption in circuit can greatly be increased；Simultaneously as the basic vector face dislocation in SiC material can be induced due to the work of PN junction
Fault (also referred to as bipolar degradation), therefore, making anti-paralleled diode using its internal PN junction diode can shadow
The reliability of Chinese percussion instrument part.During using SiC MOSFET elements, generally require in its external inverse parallel SiC Schottky diode, but
It is the cost of manufacture that can increase device in this way.Industry has research directly to be made in the N-type region between the cell of SiC MOSFET
Schottky metal integrated planar type SBD, but the limited area in SBD region domain formed in this way, pressure resistance and reliability are in the big electricity of high pressure
It flows in device by serious restriction and challenge.
Invention content
For problems of the prior art, the purpose of the present invention is to provide a kind of integrated two poles of convex block shape Schottky
The silicon carbide MOSFET device structure cell of pipe, by being integrated with convex block shape Schottky diode between MOSFET cellulars,
When device works, play fly-wheel diode, improve circuit work efficiency and reliability, reduce circuit production into
This.
To achieve the above object, the present invention uses following technical scheme：
A kind of silicon carbide MOSFET device structure cell of integrated convex block shape Schottky diode, the silicon carbide MOSFET
It is integrated with convex block shape Schottky diode between device structure cell, and the convex block shape Schottky diode both sides
Convex block shape Schottky diode is looped around intermediate guarantor by the deep injection region that MOSFET cellular P-well area edges are provided with P-Plus
Shield is got up.
Further, the silicon carbide MOSFET device structure cell is planar gate structure or V slots, U groove slot grid structures.
Further, the N-type region in the convex block area of the convex block shape Schottky diode can be that first high surface levels injection is right
Direct etching forms or etches to be formed again after the N-Epi layers of the slightly higher concentration of secondary epitaxy afterwards, and doping concentration is higher than its bottom
The N-epi drift regions of lower MOSFET region, with the conduction impedance for optimizing Schottky barrier and reducing schottky region.
The present invention has following advantageous effects：
The application between MOSFET cellulars by being integrated with convex block shape Schottky diode, and diode both sides
Convex block SBD is looped around centre and protected by the deep injection region that MOSFET cellular P-well area edges have P-Plus, convex so as to make
Block SBD can bear higher pressure resistance, realize the device optimization design of high-voltage great-current.
The application between MOSFET cellulars by being integrated with convex block shape Schottky diode, when device works, rises continuous
The effect of diode is flowed, the efficiency and reliability of circuit work is improved, reduces circuit production cost.
Description of the drawings
Fig. 1 is the primitive cell structure schematic diagram of lateral DMOS FET (left side) and U grooves UTMOSFET (right side) in the prior art；
Fig. 2 is the silicon carbide flat-grid MOSFET component structure cell signal of the integrated convex block Schottky diode of the present invention
Figure；
Fig. 3 is the direct etching process flow chart of convexity bulk schottky diode area of the embodiment of the present invention；
Fig. 4 is first to do secondary high concentration N-type Schottky contact region extension, then etch and to form convex block shape in the embodiment of the present invention
The process flow chart of schottky diode area.
Specific embodiment
In the following, refer to the attached drawing, more fully illustrates the present invention, shown in the drawings of the exemplary implementation of the present invention
Example.However, the present invention can be presented as a variety of different forms, it is not construed as being confined to the exemplary implementation described here
Example.And these embodiments are to provide, so as to make the present invention fully and completely, and it will fully convey the scope of the invention to this
The those of ordinary skill in field.
As shown in Fig. 2, a kind of silicon carbide MOSFET device member the present invention provides integrated convex block shape Schottky diode
Born of the same parents' structure is integrated with convex block shape Schottky diode 1, and convex block shape Xiao Te between the silicon carbide MOSFET device structure cell
The MOSFET cellular P-well area edges of 2 both sides of based diode are provided with the deep injection region 2 of P-Plus by convex block shape Schottky two
Pole pipe 1 is looped around centre and protects.The application by being integrated with convex block shape Schottky diode 1 between MOSFET cellulars,
When device works, play fly-wheel diode, improve circuit work efficiency and reliability, reduce circuit production into
This.And convex block shape Schottky diode 1 is when by backward voltage, the deep injection region 2 of the deep P-Plus of both sides MOSFET can handle
Schottky bump region is sheltered completely, so as to which convex block SBD be enable to bear higher pressure resistance, realizes the device optimization of high-voltage great-current
Design.The silicon carbide MOSFET device structure cell further includes source electrode 3, grid 4, drain electrode 5, N+- Sub areas, N-epi drift regions with
And Schottky contacts 6.
Silicon carbide MOSFET device structure cell is planar gate structure or V slots, U groove slot grid structures.
It is formed as shown in figure 3, the N-type region 7 of convex block shape Schottky diode can be direct etching.
As shown in figure 4, the N-type region 7 of convex block shape Schottky diode can also be the N-Epi layers of the slightly higher concentration of secondary epitaxy
(ICP/RIE ion(ic) etchings form SBD convex blocks area) is etched after 8 again to be formed, doping concentration can be higher than its beneath MOSFET region
N-epi drift regions, with optimize Schottky barrier and reduce schottky region conduction impedance.
It is described above simply to illustrate that of the invention, it is understood that the invention is not limited in above example, meet
The various variants of inventive concept are within protection scope of the present invention.
Claims (3)
- A kind of 1. silicon carbide MOSFET device structure cell of integrated convex block shape Schottky diode, which is characterized in that the carbon Convex block shape Schottky diode, and the convex block shape Schottky diode are integrated between SiClx MOSFET element structure cell Convex block shape Schottky diode is looped around by the deep injection region that the MOSFET cellular P-well area edges of both sides are provided with P-Plus Centre protects.
- 2. the silicon carbide MOSFET device structure cell of integrated convex block shape Schottky diode according to claim 1, It is characterized in that, the silicon carbide MOSFET device structure cell is planar gate structure or V slots, U groove slot grid structures.
- 3. the silicon carbide MOSFET device structure cell of integrated convex block shape Schottky diode according to claim 1, It is characterized in that, the N-type region in the convex block area of the convex block shape Schottky diode can be that first high surface levels injection is then direct Etching forms or etches to be formed again after the N-Epi layers of the slightly higher concentration of secondary epitaxy, and doping concentration is higher than under it The N-epi drift regions of MOSFET region, with the conduction impedance for optimizing Schottky barrier and reducing schottky region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711459799.0A CN108198857A (en) | 2017-12-28 | 2017-12-28 | A kind of silicon carbide MOSFET device structure cell of integrated convex block shape Schottky diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711459799.0A CN108198857A (en) | 2017-12-28 | 2017-12-28 | A kind of silicon carbide MOSFET device structure cell of integrated convex block shape Schottky diode |
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| Publication Number | Publication Date |
|---|---|
| CN108198857A true CN108198857A (en) | 2018-06-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711459799.0A Pending CN108198857A (en) | 2017-12-28 | 2017-12-28 | A kind of silicon carbide MOSFET device structure cell of integrated convex block shape Schottky diode |
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| Country | Link |
|---|---|
| CN (1) | CN108198857A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111146292A (en) * | 2020-01-17 | 2020-05-12 | 电子科技大学 | Longitudinal GaN MOS with integrated freewheeling diode |
| CN111211160A (en) * | 2020-01-15 | 2020-05-29 | 电子科技大学 | Vertical GaN power diode |
| CN112216694A (en) * | 2020-09-21 | 2021-01-12 | 芜湖启源微电子科技合伙企业(有限合伙) | SiC IGBT device and preparation method thereof |
| CN113035863A (en) * | 2021-03-03 | 2021-06-25 | 浙江大学 | Power integrated chip with longitudinal channel structure |
| CN115602730A (en) * | 2022-12-15 | 2023-01-13 | 深圳市森国科科技股份有限公司（Cn） | Semiconductor field effect transistor and preparation method thereof, circuit board and equipment |
| CN117253923A (en) * | 2023-11-20 | 2023-12-19 | 深圳平创半导体有限公司 | Boss split gate silicon carbide MOSFET integrated with JBS and preparation process |
| CN112216694B (en) * | 2020-09-21 | 2024-05-28 | 安徽芯塔电子科技有限公司 | SiC IGBT device and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6727525B1 (en) * | 1999-07-03 | 2004-04-27 | Robert Bosch Gmbh | Diode comprising a metal semiconductor contact and a method for the production thereof |
| US20160233210A1 (en) * | 2015-02-11 | 2016-08-11 | Monolith Semiconductor, Inc. | High voltage semiconductor devices and methods of making the devices |
| CN206574721U (en) * | 2017-03-06 | 2017-10-20 | 北京世纪金光半导体有限公司 | A kind of double trench MOSFET devices of SiC of integrated schottky diode |
-
2017
- 2017-12-28 CN CN201711459799.0A patent/CN108198857A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6727525B1 (en) * | 1999-07-03 | 2004-04-27 | Robert Bosch Gmbh | Diode comprising a metal semiconductor contact and a method for the production thereof |
| US20160233210A1 (en) * | 2015-02-11 | 2016-08-11 | Monolith Semiconductor, Inc. | High voltage semiconductor devices and methods of making the devices |
| CN206574721U (en) * | 2017-03-06 | 2017-10-20 | 北京世纪金光半导体有限公司 | A kind of double trench MOSFET devices of SiC of integrated schottky diode |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111211160A (en) * | 2020-01-15 | 2020-05-29 | 电子科技大学 | Vertical GaN power diode |
| CN111146292A (en) * | 2020-01-17 | 2020-05-12 | 电子科技大学 | Longitudinal GaN MOS with integrated freewheeling diode |
| CN112216694A (en) * | 2020-09-21 | 2021-01-12 | 芜湖启源微电子科技合伙企业(有限合伙) | SiC IGBT device and preparation method thereof |
| CN112216694B (en) * | 2020-09-21 | 2024-05-28 | 安徽芯塔电子科技有限公司 | SiC IGBT device and preparation method thereof |
| CN113035863A (en) * | 2021-03-03 | 2021-06-25 | 浙江大学 | Power integrated chip with longitudinal channel structure |
| CN115602730A (en) * | 2022-12-15 | 2023-01-13 | 深圳市森国科科技股份有限公司（Cn） | Semiconductor field effect transistor and preparation method thereof, circuit board and equipment |
| CN117253923A (en) * | 2023-11-20 | 2023-12-19 | 深圳平创半导体有限公司 | Boss split gate silicon carbide MOSFET integrated with JBS and preparation process |
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Application publication date: 20180622 |