CN1221034C - High-voltage N-type transversely double-diffusion metal oxide semiconductor transistor - Google Patents
High-voltage N-type transversely double-diffusion metal oxide semiconductor transistor Download PDFInfo
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- CN1221034C CN1221034C CN 02138394 CN02138394A CN1221034C CN 1221034 C CN1221034 C CN 1221034C CN 02138394 CN02138394 CN 02138394 CN 02138394 A CN02138394 A CN 02138394A CN 1221034 C CN1221034 C CN 1221034C
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Abstract
The present invention discloses an N-type transversal double-infused metal oxide semiconductor transistor with high voltage. The transistor is composed of a source electrode, a drain electrode, a grid electrode, field oxygen, grid oxygen and an oxidizing layer, wherein the grid oxygen is loaded on the source electrode, the drain electrode and the field oxygen; the grid electrode is positioned between the grid oxygen and the oxidizing layer; aluminum lead wires are arranged on the grid electrode, the source electrode and the drain electrode. A P-type well is arranged under the source electrode; a contact hole of the P-type well is formed in the P-type well; the P-type well, the drain electrode and the field oxygen are arranged on the P-type substrate; the source electrode is connected with a field electrode plate. The field electrode plate is used, and is connected with the source electrode. The field electrode plate is connected with the ground, and thus, low voltage is obtained; the voltage on the field electrode plate is low. A depletion region formed on the silicon surface is large because of the function of the field electrode plate, and thus, the effect of weakening the surface peak electric field is good; the break down voltage is enhanced.
Description
One, technical field
The present invention is a kind of MOS (metal-oxide-semiconductor) transistor, especially high-voltage N type transverse double-diffused metal-oxide semiconductor device.
Two, background technology
The MOS type power IC device has advantages such as switching characteristic is good, power consumption is little, what is more important MOS type power device is easy to compatibility standard low pressure CMOS (Complementary Metal Oxide Semiconductor) technology, reduce production cost of chip, therefore the MOS type power IC device has bigger advantage in the range of application of 10V-600V.More with structures such as horizontal double diffusion, offset gates in the MOS type power IC device, though device architecture is improved, improved breakdown characteristics to a certain extent, but the result who brings is the structure of metal oxide semiconductor device to be become and becomes increasingly complex, preparation cost is also more and more higher, and rate of finished products reduces.
Three, technology contents
Technical problem the invention provides a kind of high-voltage N type transverse double-diffused metal-oxide semiconductor device that can improve puncture voltage and low cost of manufacture.
A kind of high-voltage N type transverse double-diffused metal-oxide semiconductor device of technical scheme, form by source 2, leakage 3, grid 4, an oxygen 6, grid oxygen 7 and oxide layer 8, grid oxygen 7 is located on source 2, leakage 3 and the oxygen 6, grid 4 are between grid oxygen 7 and oxide layer 8, in grid 4, source 2 with leak and be provided with aluminum lead on 3, below source 2, be provided with P type trap 21, on P type trap 21, be provided with P type trap contact hole 211, P type trap 21, leakage 3 and an oxygen 6 are located on the P type substrate 1, and source 2 is connected with field plate 5.
Beneficial effect (1) the present invention has introduced field plate and field plate links to each other with the source, field plate promptly joins with ground, thereby acquisition low-voltage, and the voltage on the pole plate is low more, the depletion region that forms at silicon face owing to the effect of field plate is big more, so it is good more that it weakens surperficial peak value electric field effect, thereby improve its puncture voltage.The present invention can be based on realizing that this makes its low cost of manufacture on the 1.2 μ m standard extension low pressure CMOS (Complementary Metal Oxide Semiconductor) technology lines.(2) be located between oxide layer and the grid oxygen owing to field plate of the present invention, the making of field plate can be finished synchronously with the making of grid, moreover the present invention can be based on realizing on the 1.2 μ m standard extension low pressure CMOS (Complementary Metal Oxide Semiconductor) technology lines, so the present invention has advantage of low manufacturing cost.(3) N type epitaxial material is compared with the body silicon materials better breakdown characteristics can be provided.
Four, description of drawings
Fig. 1 is the structural representation of present embodiment.
Five, specific embodiments
A kind of high-voltage N type transverse double-diffused metal-oxide semiconductor device, by source 2, leak 3, grid 4, field oxygen 6, grid oxygen 7 and oxide layer 8 are formed, grid oxygen 7 is located at source 2, on a leakage 3 and the oxygen 6, grid 4 are between grid oxygen 7 and oxide layer 8, at grid 4, source 2 and leakage 3 are provided with aluminum lead, below source 2, be provided with P type trap 21, on P type trap 21, be provided with P type trap contact hole 211, P type trap 21, a leakage 3 and an oxygen 6 are located on the P type substrate 1, source 2 is connected with field plate 5, in the present embodiment, field plate 5 is located between oxide layer 8 and the grid oxygen 7 and is positioned at the top of an oxygen 6, in P type substrate 1 and source 2, be provided with N type extension 9 between a leakage 3 and the oxygen 6.
Claims (2)
1, a kind of high-voltage N type transverse double-diffused metal-oxide semiconductor device, by source (2), leak (3), grid (4), field oxygen (6), grid oxygen (7) and oxide layer (8) are formed, grid oxygen (7) is located at source (2), leak on (3) and the oxygen (6), grid (4) are positioned between grid oxygen (7) and the oxide layer (8), in grid (4), source (2) and leakage (3) are provided with aluminum lead, (2) below is provided with P type trap (21) in the source, on P type trap (21), be provided with P type trap contact hole (211), P type trap (21), a leakage (3) and an oxygen (6) are located on the P type substrate (1), it is characterized in that source (2) is connected with field plate (5), field plate (5) is located between oxide layer (8) and the grid oxygen (7) and is positioned at the top of an oxygen (6).
2, high-voltage N type transverse double-diffused metal-oxide semiconductor device according to claim 1 is characterized in that being provided with N type extension (9) between P type substrate (1) and source (2), leakage (3) and an oxygen (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02138394 CN1221034C (en) | 2002-09-30 | 2002-09-30 | High-voltage N-type transversely double-diffusion metal oxide semiconductor transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02138394 CN1221034C (en) | 2002-09-30 | 2002-09-30 | High-voltage N-type transversely double-diffusion metal oxide semiconductor transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1487595A CN1487595A (en) | 2004-04-07 |
| CN1221034C true CN1221034C (en) | 2005-09-28 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02138394 Expired - Fee Related CN1221034C (en) | 2002-09-30 | 2002-09-30 | High-voltage N-type transversely double-diffusion metal oxide semiconductor transistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1221034C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1324717C (en) * | 2004-06-24 | 2007-07-04 | 东南大学 | Multi electric potential field plate lateral high voltage N type MOS transistor |
| CN100464421C (en) * | 2007-10-30 | 2009-02-25 | 无锡博创微电子有限公司 | Integrated enhancement type and depletion type vertical bilateral diffusion metallic oxide field effect pipe |
| CN101661955B (en) * | 2008-08-28 | 2011-06-01 | 新唐科技股份有限公司 | Transverse diffusion metal oxide semiconductor device and manufacturing method thereof |
-
2002
- 2002-09-30 CN CN 02138394 patent/CN1221034C/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| CN1487595A (en) | 2004-04-07 |
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Owner name: SOWTHEAST UNIV. Effective date: 20140624 Owner name: JIANGSU KUIZE MACHINERY INDUSTRY CO., LTD. Free format text: FORMER OWNER: SOWTHEAST UNIV. Effective date: 20140624 |
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Free format text: CORRECT: ADDRESS; FROM: 210096 NANJING, JIANGSU PROVINCE TO: 226600 NANTONG, JIANGSU PROVINCE |
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| TR01 | Transfer of patent right |
Effective date of registration: 20140624 Address after: 226600, Nantong County, Jiangsu Province, Haian County town of Hu Hu Village 22 groups Patentee after: Jiangsu Kuize Machinery Industrial Co., Ltd. Patentee after: Southeast University Address before: 210096 Jiangsu city Nanjing Province four pailou No. 2 Patentee before: Southeast University |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050928 Termination date: 20190930 |