CN105789059B - The method detached after wafer bonding - Google Patents

The method detached after wafer bonding Download PDF

Info

Publication number
CN105789059B
CN105789059B CN201610247519.9A CN201610247519A CN105789059B CN 105789059 B CN105789059 B CN 105789059B CN 201610247519 A CN201610247519 A CN 201610247519A CN 105789059 B CN105789059 B CN 105789059B
Authority
CN
China
Prior art keywords
slide glass
wafer
bonding
isolation film
glue
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201610247519.9A
Other languages
Chinese (zh)
Other versions
CN105789059A (en
Inventor
唐昊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Brilliant Microelectronics Of Zhejiang Zhong Na Science And Technology Ltd
Original Assignee
Brilliant Microelectronics Of Zhejiang Zhong Na Science And Technology Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Brilliant Microelectronics Of Zhejiang Zhong Na Science And Technology Ltd filed Critical Brilliant Microelectronics Of Zhejiang Zhong Na Science And Technology Ltd
Priority to CN201610247519.9A priority Critical patent/CN105789059B/en
Publication of CN105789059A publication Critical patent/CN105789059A/en
Application granted granted Critical
Publication of CN105789059B publication Critical patent/CN105789059B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/98Methods for disconnecting semiconductor or solid-state bodies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/98Methods for disconnecting semiconductor or solid-state bodies

Abstract

The present invention provides a kind of method detached after wafer bonding, it includes the following steps:Step 1: the slide glass of the wafer after bonding is placed up, then tool is utilized to destroy slide glass;Step 2: the slide glass after destruction is taken away, it is left with isolation film and is bonded the wafer of glue;Step 3: tearing isolation film, it is left bonding glue and wafer, then cleaning bonding glue, completes the separation of wafer.The above method is used, although destroying slide glass, the cost of slide glass wants much lower, within tolerance interval, and the device detached can be very simple, and the cost of device can substantially reduce, and need not be aligned, then the time spent can also reduce very much, improve production efficiency.

Description

The method detached after wafer bonding
Technical field:
It is especially a kind of method detached after wafer bonding the present invention relates to microelectronics technology.
Background technology:
Direction with the people requirement to electronic product towards miniaturization is developed, and electronic chip is also towards more and more thinner Direction is developed, if but when being thinned to 100 microns or less as the thickness of the wafer of material using silicon, being very easy to occur Fragment or be when being processed to wafer due to stress cause wafer bow deformation etc., this ultra-thin wafers can not be carried out Direct working process.Therefore, in order to this kind of ultra-thin wafers of working process, need by this ultra-thin wafer first with a slide glass Interim bonding, after bonding, wafer is integrated with the viscous section of slide glass, so that it may wafer to be thinned, the manufacture of TSV, be connected up again The manufacture of layer forms the making of the techniques such as intraconnection.Then wafer is detached with slide glass again, and to be thinned after wafer into The techniques such as row cleaning, cutting, complete the processing technology to this ultra-thin wafer.
Currently, the patent application of Publication No. CN104485294A discloses a kind of wafer bonding method, this method is It is surface-treated on slide glass, forms one layer of isolation film, the bond degree between isolation film and slide glass is moderate, deliberately do not go to tear In the case of, film will not be detached from from slide glass, but when force is torn, can be removed film from slide glass, when being then bonded Coating between the front of slide glass with isolation film and wafer be bonded glue, wafer and slide glass are bonded together, elder generation when separation Certain gap is separated between the isolation film and slide glass of the side of wafer after bonding, slide glass is then adsorbed on using vacuum cup The back side, force remove slide glass from isolation film.Although more convenient than the prior art using this separation method, however, there remains It is exerted a force by sucker and removes from isolation film slide glass, operation or trouble, and also if to be suitable for industrialized production also need Manipulator is wanted, complicated, cost is higher.
For this purpose, the patent application of Publication No. CN104979262A has also been proposed a kind of method detached after wafer bonding, It produces the air-flow of the junction towards wafer and slide glass bonding using air-stream generating device, makes wafer and slide glass by air-flow Separation.In this way, the junction that gas nozzle is aligned to wafer and slide glass is needed, and in order to make wafer and slide glass be easier Separation, generally can also produce a gap in the isolation film of the junction of wafer and slide glass, then by air-flow against gap It blows so that wafer and slide glass are easier to detach, and using this structure, need an air-stream generating device, still can be more complicated, If manufacturing gap or the junction of gas nozzle alignment wafer and slide glass being made to need more accurate aligning equipment, cost Still relatively high.
Invention content:
Present invention solves the technical problem that being to overcome existing technological deficiency, a kind of, separation letter simple using equipment is provided The method detached after single and lower-cost wafer bonding.
Technical solution provided by the invention is:The present invention provides a kind of method detached after wafer bonding, it includes following Step:
Step 1: the slide glass of the wafer after bonding is placed up, then tool is utilized to destroy slide glass;
Step 2: the slide glass after destruction is taken away, it is left with isolation film and is bonded the wafer of glue;
Step 3: tearing isolation film, it is left bonding glue and wafer, then cleaning bonding glue, completes the separation of wafer.
After the above method, needed brokenly in this way in the way of destruction slide glass to detach slide glass and wafer Then slide glass after destruction is taken away from wafer since the bonding force between slide glass and isolation film is weaker, takes it away by bad slide glass Afterwards, so that it may directly isolation film to tear it down from wafer, it is left with bonding glue and wafer, at this time when cleaning bonding glue, one As the mode impregnated clean bonding glue, due to the one side exposure of bonding glue, bonding glue can come into full contact with cleaning solution, clearly It is more much higher than the prior art to wash efficiency.The above method is used, although destroying slide glass, the cost of slide glass wants much lower, Within tolerance interval, and the device detached can be very simple, and the cost of device can substantially reduce, and does not need pair Standard improves production efficiency then the time spent can also reduce very much.
In the step 1, the destruction slide glass is to be cut slide glass open from centre using cutter, is cut in the centre of slide glass Go out opening.In this way, from centre cut slide glass after, due to the bonding force between slide glass and isolation film be largely The bond degree of edge, slide glass middle section is relatively low, therefore, it is very easy to slide glass can be taken away from isolation film, and no longer The equipment of the forces such as air blowing or sucker is needed, and does not allow destructible to be bonded together with slide glass by the way of cutting slide glass Wafer.
Description of the drawings:
Attached drawing 1 is the schematic diagram of the separated wafer of the method for the present invention;
Attached drawing 2 is the structural schematic diagram of the embodiment of the present invention
The structural schematic diagram of 3 another embodiment of the present invention of attached drawing;
As shown in the figure:1, slide glass, 2 wafers, 3, isolation film, 4, bonding glue.
Specific implementation mode
It elaborates in the following with reference to the drawings and specific embodiments to the present invention:
As shown in Figure 1-Figure 3:The method of the present invention wafer after bonding to be separated be structure shown in FIG. 1, on slide glass 1 It is surface-treated, forms one layer of isolation film 3, the bond degree between isolation film 3 and slide glass 1 is moderate, the case where deliberately not going to tear Under, film will not be detached from from slide glass, but when force is torn, can be removed film from slide glass, by band when being then bonded There is coating between the front of the slide glass 1 of isolation film 3 and wafer 2 to be bonded glue 4, wafer and slide glass are bonded together, that is, work as slide glass When placing up, it is followed successively by slide glass 1, isolation film 3, bonding glue 4 and wafer 2 from top to bottom.Between isolation film and slide glass Bonding force mostlys come from the marginal portion of slide glass and isolation film contact.
Technical solution provided by the invention is:The present invention provides a kind of method detached after wafer bonding, it includes following Step:
Step 1: the slide glass of the wafer after bonding is placed up, then tool is utilized to destroy slide glass;
Step 2: the slide glass after destruction is taken away, it is left with isolation film and is bonded the wafer of glue;
Step 3: tearing isolation film, it is left bonding glue and wafer, then cleaning bonding glue, completes the separation of wafer.
After the above method, needed brokenly in this way in the way of destruction slide glass to detach slide glass and wafer Then slide glass after destruction is taken away from wafer since the bonding force between slide glass and isolation film is weaker, takes it away by bad slide glass Afterwards, so that it may directly isolation film to tear it down from wafer, it is left with bonding glue and wafer, at this time when cleaning bonding glue, one As the mode impregnated clean bonding glue, due to the one side exposure of bonding glue, bonding glue can come into full contact with cleaning solution, clearly It is more much higher than the prior art to wash efficiency.The above method is used, although destroying slide glass, the cost of slide glass wants much lower, Within tolerance interval, and the device detached can be very simple, and the cost of device can substantially reduce, and does not need pair Standard improves production efficiency then the time spent can also reduce very much.
In the step 1, the destruction slide glass is cut slide glass open from centre using cutter, is cut out in the centre of slide glass Opening.In this way, after cutting slide glass from centre, since the bonding force between slide glass and isolation film is largely on side At edge, the bond degree of slide glass middle section is relatively low, therefore, it is very easy to can take slide glass from isolation film away, and no longer needs It blows or the equipment of the forces such as sucker, and does not allow destructible to be bonded together with slide glass by the way of cutting slide glass Wafer.
Fig. 2 is one of embodiment, has cut two knives on slide glass by cutter, slide glass has been cut into 4 parts from centre, in this way from load It is just easy to take away this 4 portions of slide glasses from isolation film among piece, certainly in cutting, the depth of cutting is controlled, not hinder To subject to bonding glue, it thus will not more be damaged to wafer.
Fig. 3 is the two of embodiment, has cut three knives on slide glass by cutter, slide glass is divided into 6 parts.In this way in processing one A bit when larger wafer, it may be used and cut the mode of several knives to destroy slide glass more.Certainly it is carried out either on slide glass any Cutting mode, as long as in a manner of destroying slide glass then model should all be protected in the application by what slide glass was separated from isolation film Within enclosing.

Claims (2)

1. a kind of method detached after wafer bonding, it is characterised in that:It includes the following steps:
Step 1: the slide glass of the wafer after bonding is placed up, then tool is utilized to destroy slide glass;
Step 2: the slide glass after destruction is taken away, it is left with isolation film and is bonded the wafer of glue;
Step 3: tearing isolation film, it is left bonding glue and wafer, then cleaning bonding glue, completes the separation of wafer.
2. the method detached after wafer bonding according to claim 1, it is characterised in that:It is described broken in the step 1 Bad slide glass is to be cut slide glass open from centre using cutter, and opening is cut out in the centre of slide glass.
CN201610247519.9A 2016-04-19 2016-04-19 The method detached after wafer bonding Active CN105789059B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610247519.9A CN105789059B (en) 2016-04-19 2016-04-19 The method detached after wafer bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610247519.9A CN105789059B (en) 2016-04-19 2016-04-19 The method detached after wafer bonding

Publications (2)

Publication Number Publication Date
CN105789059A CN105789059A (en) 2016-07-20
CN105789059B true CN105789059B (en) 2018-08-03

Family

ID=56397033

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610247519.9A Active CN105789059B (en) 2016-04-19 2016-04-19 The method detached after wafer bonding

Country Status (1)

Country Link
CN (1) CN105789059B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111745531B (en) * 2020-07-01 2021-08-27 长江存储科技有限责任公司 Curved surface grinding device and chip extraction method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102460677A (en) * 2009-04-16 2012-05-16 休斯微技术股份有限公司 Improved apparatus for temporary wafer bonding and debonding
CN104485294A (en) * 2014-12-12 2015-04-01 浙江中纳晶微电子科技有限公司 Temporary bonding and separation method for wafers

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5296386B2 (en) * 2008-01-11 2013-09-25 株式会社ディスコ Manufacturing method of laminated device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102460677A (en) * 2009-04-16 2012-05-16 休斯微技术股份有限公司 Improved apparatus for temporary wafer bonding and debonding
CN104485294A (en) * 2014-12-12 2015-04-01 浙江中纳晶微电子科技有限公司 Temporary bonding and separation method for wafers

Also Published As

Publication number Publication date
CN105789059A (en) 2016-07-20

Similar Documents

Publication Publication Date Title
US9373530B2 (en) Tool for picking a planar object from a supply station
US8222120B2 (en) Method of dicing wafer using plasma
WO2016179892A1 (en) Wafer separation method
JP2007250598A (en) Process for manufacturing semiconductor device
JP2002100588A (en) Production method for semiconductor device
TWI267927B (en) Method for wafer level package
JPH03204954A (en) Semiconductor device and manufacture thereof
US20110057332A1 (en) Semiconductor chip with conductive adhesive layer and method of manufacturing the same, and method of manufacturing semiconductor device
US10490531B2 (en) Manufacturing method of semiconductor device and semiconductor device
US6830958B2 (en) Method of making chip scale package
JPWO2005029574A1 (en) Collet, die bonder and chip pickup method
CN105789059B (en) The method detached after wafer bonding
CN105328804B (en) A kind of cutting method of wafer
JP6502874B2 (en) Semiconductor device manufacturing method
KR20050088784A (en) Fabricating method of a semiconductor device which performs a dicing process using a surface protection tape for a back grinding process
CN106876289B (en) A kind of packaging method of chip
CN105336581A (en) Manufacturing method and apparatus of power semiconductor device
JP2008159724A (en) Manufacturing method of semiconductor device
WO2012120694A1 (en) Method of manufacturing wafer level package and wafer level package
KR20100039690A (en) Method of wafer sawing
JP2011054648A (en) Method of manufacturing semiconductor device
JPS59130438A (en) Method for separating plates
JP2018133497A (en) Method for manufacturing device chip
CN112309965A (en) Method for reducing IO interface damage of packaged chip
JP2002208571A (en) Method of manufacturing semiconductor device and semiconductor device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant