CN103904113B - Depletion type AlGaN / GaN HEMT component structure with gate field plate and manufacturing method of depletion type AlGaN / GaN HEMT component structure - Google Patents
Depletion type AlGaN / GaN HEMT component structure with gate field plate and manufacturing method of depletion type AlGaN / GaN HEMT component structure Download PDFInfo
- Publication number
- CN103904113B CN103904113B CN201410025458.2A CN201410025458A CN103904113B CN 103904113 B CN103904113 B CN 103904113B CN 201410025458 A CN201410025458 A CN 201410025458A CN 103904113 B CN103904113 B CN 103904113B
- Authority
- CN
- China
- Prior art keywords
- algan
- layer
- gan
- silicide
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 120
- 238000004519 manufacturing process Methods 0.000 title abstract description 3
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 56
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 55
- 238000002161 passivation Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 229910002601 GaN Inorganic materials 0.000 claims description 54
- 239000000463 material Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 17
- 230000004888 barrier function Effects 0.000 claims description 16
- 238000001259 photo etching Methods 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 11
- 229910052593 corundum Inorganic materials 0.000 claims description 11
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 11
- 230000006835 compression Effects 0.000 claims description 9
- 238000007906 compression Methods 0.000 claims description 9
- 238000002360 preparation method Methods 0.000 claims description 9
- 238000000926 separation method Methods 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 8
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 230000015556 catabolic process Effects 0.000 claims description 6
- 238000011161 development Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910005883 NiSi Inorganic materials 0.000 claims description 5
- 238000005054 agglomeration Methods 0.000 claims description 5
- 230000002776 aggregation Effects 0.000 claims description 5
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 238000004151 rapid thermal annealing Methods 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 229910021244 Co2Si Inorganic materials 0.000 claims description 3
- 229910008479 TiSi2 Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910001868 water Inorganic materials 0.000 claims description 3
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 claims description 2
- 239000012159 carrier gas Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 claims description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 230000007797 corrosion Effects 0.000 claims 1
- 230000008719 thickening Effects 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract description 5
- 238000002955 isolation Methods 0.000 abstract 1
- 230000010287 polarization Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241000160765 Erebia ligea Species 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 125000001967 indiganyl group Chemical group [H][In]([H])[*] 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1058—Channel region of field-effect devices of field-effect transistors with PN junction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The invention discloses a depletion type AlGaN / GaN HEMT component structure with a gate field plate and a manufacturing method of the depletion type AlGaN / GaN HEMT component structure. The structure comprises a substrate, an intrinsic GaN layer, an AlN isolation layer, an intrinsic AlGaN layer, an AlGaN doping layer, a gate electrode, a source electrode, a drain electrode, the gate field plate, an insulation layer, a passivation layer and silicide used for adjusting the two-dimensional electric gas density. The gate electrode, the source electrode, the drain electrode and the insulation layer are located on the upper portion of the AlGaN doping layer, and the silicide is located on the upper portion of the insulation layer and is blocky. Pressure stress is introduced to the insulation layer and the AlGaN layer. The AlGaN layer between the silicide bears tension stress. The whole AlGaN layer gains tension stress by making the block interval be smaller than the block width, and accordingly 2deg in the channel is enhanced.
Description
Technical field
The invention belongs to microelectronics technology, is related to semiconductor devices making, specifically a kind of plus grid field plate consumption
To the greatest extent type AlGaN/GaN HEMT device structure and preparation method, can be used to make the high electronics of the high-frequency depletion type of low channel resistance
Mobility transistor.
Background technology
In recent years the 3rd bandwidth forbidden band gap semiconductor with SiC and GaN as representative is so that its energy gap is big, breakdown electric field
High, thermal conductivity is high, saturated electrons speed is big and the characteristic such as heterojunction boundary two-dimensional electron gas height so as to extensively closed
Note.In theory, high electron mobility transistor (HEMT), LED, the laser diode for being made using these materials
The devices such as LD have an obvious advantageous characteristic than existing device, thus in the last few years domestic and international researcher it has been carried out extensively and
In-depth study, and achieve the achievement in research for attracting people's attention.
AlGaN/GaN hetero-junctions high electron mobility transistor (HEMT) in terms of high-temperature device and HIGH-POWERED MICROWAVES device
Advantageous advantage is shown, device high-frequency, high pressure, high power is pursued and has been attracted numerous researchs.In recent years, make
Higher frequency high pressure AlGaN/GaN HEMT become the another study hotspot of concern.Because the growth of AlGaN/GaN hetero-junctions is completed
Afterwards, heterojunction boundary there is a large amount of two-dimensional electron gas 2DEG, and when interface resistivity is reduced, we can obtain higher
Device frequency characteristic.AlGaN/GaN hetero-junctions electron mobility transistor can obtain very high frequency, but often will be with sacrifice
High pressure resistant property is cost.The method of the AlGaN/GaN heterojunction transistor frequencies for improving at present is as follows：
1. combination reduces without passivated dielectric medium (dielectric-free passivation) with long Ohmic contact is lived again
Resistivity.Referring to the InAlN/AlN/GaN HEMTs With such as Yuanzheng Yue, Zongyang Hu, Jia Guo
Regrown Ohmic Contacts and fTof 370GH.EDL.Vol33.NO.7, P1118-P1120.The method is adopted
30 nanometers of grid are long, and combine and connect without passivated dielectric medium (dielectric-free passivation) and long ohm of living again
Touch to reduce source and drain resistivity.Frequency can reach 370GHz.Can also be arrived by reducing channel length continuation raising frequency
500GHz。
2. long heavy-doped source of living again drains to the Two-dimensional electron gas channel of nearly grid.Referring to Shinohara, K.Regan,
The self-aligned-gate GaN-HEMTs with heavily-doped n such as D.Corrion, A.Brown+-GaN
ohmic contacts to 2DEG；IEDM, IEEE；2012.Live again in the past long n+GaN Ohmic contacts are got an electric shock to reducing channel junction
Resistance achieves noticeable achievement, but the Two-dimensional electron gas channel that heavy-doped source drain contact is directly arrived under close gate electrode can be obtained preferably
Frequency characteristic and current characteristics.The method reported in text makes frequency reach fT/ fmax=342/518GHz.While breakdown voltage
14V。
The content of the invention
Present invention aims to the deficiency of above high-frequency device, there is provided one kind is produced based on silicide to raceway groove
The method of stress, with the frequency characteristic voltage endurance for improving depletion-mode AlGaN/GaN high mobility transistors simultaneously, strengthens technique
Controllability and repeatability, meet GaN base electronic device to high-frequency, high-tension application requirement.
What the present invention was realized in：
The present invention technical thought be：Using epitaxial growth and etch method insulating barrier is grown on AlGaN, pass through
Etching generates a step-like thick thin dielectric layer, then multiple block silicides, silicide agglomeration spacing are grown on thin dielectric layer
Less than block width, silicide is also grown in thick dielectric layer and is formed field plate and is connected in gate electrode.Due to the thermal expansion system of silicide
Number is more than insulating barrier and the thermal coefficient of expansion of AlGaN.When epitaxial growth is cooled down, silicide can be to insulating barrier and AlGaN layer
Compression is introduced, at the same time, the AlGaN layer between silicide will be subject to tensile stress.When AlGaN layer is subject to compression
When, the 2DEG concentration positioned at AlGaN/GaN interfaces has reduced, and when AlGaN layer is subject to tensile stress, is located at
The 2DEG concentration at AlGaN/GaN interfaces increased.The size of AlGaN layer institute compression chord (tensile stress) and silicide (silication
Thing spacing) length it is relevant, this relation is not a kind of linear relationship, and be treated as with distance reduce when AlGaN layer suffered by
To impact of the stress to polarization charge increase sharply (be illustrated in fig. 2 shown below), so we can make the width of silicide, silication
Realizing the regulation of two-dimensional electron gas, the increase of 2DEG concentration on the whole is still reduced spacing difference between thing
The magnitude relationship of the two is then depended on, in this invention, we select to make two-dimensional electron gas increase reduce channel resistance.
So tensile stress is greater than compression, then silicide width is greater than silicide spacing.If as illustrated, the width of silicide
Spend for 1 μm, silicide spacing is 0.25 μm. the tension force effect that so silicide spacing (0.25 μm) region is undergone makes polarization
Final two orders of magnitude bigger than the polarization charge of silicide regions (1 μm) of electric charge, so effect on the whole shows as AlGaN layer
By tensile stress be that polarization charge concentration increased, so as between grid source between grid leak the concentration of 2DEG also because polarization charge
Increase and overall increased result is presented.Therefore the resistance in the region has reduced.Referring to IEICE TRANS.ELECTON,
VOL.E93-C, NO.8 AUGUST 2010.Analysis of Passivation-Film-Induced Stress
Between Effects on Electrical Properties in AlGaN/GaN HEMTs. are by selecting to make between silicide
Away from the length less than silicide, the growth of 2DEG concentration is made much larger than the reduction of 2DEG concentration, so that between grid leak and grid source
Resistance reduced, in the case where grid leak spacing is not changed improve high mobility transistor frequency characteristic.In heavy insulation
Field plate on layer is thicker due to medium, and the impact to 2DEG is negligible, but being connected in after gate electrode can play a part of field plate,
The voltage endurance of the present invention can be improved.
According to above-mentioned technical thought, the depletion-mode AlGaN/GaN high-frequency and high-voltages device architecture of the present invention includes substrate, intrinsic
It is GaN layer, AlN separation layers, intrinsic AlGaN layer, AlGaN doped layers, gate electrode, source electrode, drain electrode, grid field plate, insulating barrier, blunt
Change layer and the silicide for adjusting two-dimensional electron gas；The AlN separation layers are located on intrinsic GaN layer, described
AlGaN is levied on the separation layer, the AlGaN doped layers are located on intrinsic AlGaN layer, gate electrode, source electrode, leakage
Electrode and insulating barrier are located on AlGaN doped layers, and silicide is located on insulating barrier；Have in substrate Epitaxial growth and exhaust
Type AlGaN/GaN heterojunction material, the AlGaN in the AlGaN/GaN heterojunction materials is by intrinsic AlGaN layer and AlGaN
Doped layer is collectively constituted, and GaN is exactly intrinsic GaN layer, and gate electrode, source electrode and electric leakage are formed with the heterojunction material
Pole, then deposits a layer insulating, and wherein thick dielectric layer is located between gate electrode and drain electrode, adjacent gate electrode, and thickness is
200nm-700nm, thin dielectric layer is located between thick dielectric layer and drain electrode and gate electrode and source electrode between respectively, and thickness is 5
Between~10nm, grid leak region on the insulating layer and grid source region, silicide is formed with, silicide is bulk, can be to silication
Insulating barrier, intrinsic AlGaN layer and AlGaN doped layers introducing compression immediately below thing, and remaining intrinsic AlGaN in addition
Layer and AlGaN doped layers region can be subject to tensile stress, be smaller than block width by making block so that intrinsic AlGaN layer and
AlGaN doped layers totally obtain tensile stress, so that 2DEG is strengthened in raceway groove, described silicide includes NiSi, TiSi2
Or Co2Si, by the silicide in thick dielectric layer and gate electrode grid field plate structure is electrically connected to form, and is finally deposited passivation layer and is realized device
The passivation of part.Backing material in the present invention is sapphire, carborundum, GaN or MgO, intrinsic AlGaN layer and AlGaN doped layers
The component of middle Al and Ga can be adjusted, AlxGa1-xX=0~1 in N, intrinsic GaN layer can replace with AlGaN layer, and this is replaced
The component of Al is less than the Al components of intrinsic AlGaN layer and AlGaN doped layers in AlGaN after changing, by the silication in thick dielectric layer
Thing is electrically connected to form grid field plate structure with gate electrode, improves the breakdown voltage of device.
According to above-mentioned technical thought, the structure of AlGaN/GaN HEMT device performances is improved using metal silicide, including
Following steps：
(1) organic washing is carried out to epitaxially grown AlGaN/GaN materials, is cleaned and be put into the deionized water of flowing
HCl∶H2Corrosion 30-60s is carried out in the solution of O=1: 1 volume ratio, finally high pure nitrogen is cleaned and use with the deionized water of flowing
Dry up；
(2) the AlGaN/GaN materials to cleaning up carry out photoetching and dry etching, form active region mesa；
(3) the AlGaN/GaN materials to preparing table top carry out photoetching, source-drain area are formed, in being put into electron beam evaporation platform
Deposit metal ohmic contact Ti/Al/Ni/Au=20/120/45/50nm is simultaneously peeled off, and 850 are finally carried out in nitrogen environment
DEG C, the rapid thermal annealing of 35s, formed Ohmic contact；
(4) device is put in magnetron sputtering reative cell and prepares Al2O3Film, process conditions are：The direct current biasing electricity of Al targets
Press as 100V, Ar throughputs are 30sccm, O2Flow is 10sccm, and the pressure of reative cell is 0.5Pa, deposits 300nm thickness
Al2O3Film；
(5) device to completing to deposit carries out photoetching development, forms Al2O3The wet etching area of film, by material HF is put into
∶H2In the solution of O=1: 10 volume ratios, corrode 3min~5min, by Al2O3Corrode to 5-10nm；
(6) and then by device it is put in the reative cell of magnetron sputtering and sputter simultaneously Ni and Si, process conditions is：Ni targets it is straight
Stream bias voltage is 100V, and the radio-frequency bias voltage of Si targets is 450V, and the flow of carrier gas Ar is 30sccm, codeposition 100nm~
150nm thick hybrid metal film；
(7) device for having deposited film is carried out into photoetching, forms the etching window area of mixed film, and be put into ICP dry method
In etching reaction chamber, process conditions are：Upper electrode power is 200W, and lower electrode power is 20W, and chamber pressure is 1.5Pa,
CF4Flow be 20sccm, the flow of Ar gas is 10sccm, and etch period is 5min, is stayed on device after dry etching
The silicide for getting off is bulk, and causes to be smaller than silicide agglomeration width between silicide agglomeration；
(8) device is put in quick anneal oven, 450 DEG C is carried out in a nitrogen environment, the rapid thermal annealing of 30s is formed
NiSi alloys, silicide is to Al2O3Insulating medium layer and AlGaN layer introduce compression, and the AlGaN layer between silicide is subject to open
Stress, by making block block width is smaller than so that AlGaN layer totally obtains tensile stress, so that 2DEG is increased in raceway groove
By force；
(9) device to completing alloy carries out photoetching, forms gate electrode and grid field plate region, and device is put into into HF: H2O
By the Al in gate electrode region in=1: 10 volume ratio solution2O3Corrode completely, form gate electrode and grid field plate window, Ran Houfang
To enter deposited in electron beam evaporation platform Ni/Au=20/200nm and peeled off, complete the preparation of gate electrode and grid field plate；
(10) device for completing gate electrode preparation is put into into deposit SiN films in PECVD device, concrete technology condition is：
SiH4Flow be 40sccm, NH3Flow be 10sccm, chamber pressure be 1~2Pa, radio-frequency power is 40W, deposit
200nm~300nm thick SiN passivating films；
(11) device is cleaned again, photoetching development, form the etched area of SiN films, and be put into ICP dry etchings
In reative cell, process conditions are：Upper electrode power is 200W, and lower electrode power is 20W, and chamber pressure is 1.5Pa, CF4's
Flow is 20sccm, and the flow of Ar gas is 10sccm, and etch period is 10min, will be covered above source electrode, gate electrode, drain electrode
The SiN films of lid and Al2O3Etch away；
(12) device is cleaned, photoetching development, and be put in electron beam evaporation platform and deposit Ti/Au=20/200nm
Plus thick electrode, complete the preparation of integral device.
The invention has the advantages that：
(1) device of the invention produces stress using deposition insulating layer and the method for silicide to AlGaN, adjusts
Electron gas concentration and electric-field intensity in raceway groove.Improve device frequency characteristic.
(2) prepared silicide is located between grid source and grid leak in the present invention, need not be subtracted while improving frequency characteristic
Few grid leak distance, so as to high pressure resistant property need not be sacrificed.
(3) due to can as needed adjust the size and spacing of silicide between grid leak and grid source in the present invention,
So as to adjust stress size.Electron gas concentration and frequency characteristic can be adjusted as needed between grid leak between grid source.
(4) addition of grid field plate improves the breakdown voltage of device in the present invention.
Description of the drawings
By referring to accompanying drawing be more fully described the present invention exemplary embodiment, the present invention above and other aspect and
Advantage will become more easily clear, in the accompanying drawings：
Fig. 1 is the cross-sectional view of device of the present invention；
Fig. 2 is the physical principle explanatory diagram change of silicide width (polarization charge with)；
Fig. 3 is the fabrication processing schematic diagram of device of the present invention.
Specific embodiment
Hereinafter, the present invention is more fully described now with reference to accompanying drawing, various embodiments is shown in the drawings.So
And, the present invention can be implemented in many different forms, and should not be construed as limited to embodiment set forth herein.Phase
Instead, there is provided it will thoroughly and completely, and fully convey the scope of the present invention to ability that these embodiments cause the disclosure
Field technique personnel.
Hereinafter, the exemplary embodiment of the present invention is more fully described with reference to the accompanying drawings.
With reference to Fig. 1, device of the present invention includes substrate, intrinsic GaN layer, AlN separation layers, AlGaN potential barrier (intrinsic AlGaN
Layer), AlGaN doped layers, gate electrode, source electrode, drain electrode, grid field plate, insulating barrier, passivation layer and for adjusting-two dimension electricity
The silicide of sub- gas concentration.The AlN separation layers be located at intrinsic GaN layer on, the intrinsic AlGaN be located at the separation layer it
On, the AlGaN doped layers are located on intrinsic AlGaN layer, and gate electrode, source electrode, drain electrode and insulating barrier are located at AlGaN
On doped layer, silicide is located on insulating barrier；There are depletion-mode AlGaN/GaN heterojunction materials in substrate Epitaxial growth,
AlGaN in the AlGaN/GaN heterojunction materials is collectively constituted by intrinsic AlGaN layer and AlGaN doped layers, and GaN is exactly
Intrinsic GaN layer, and gate electrode, source electrode and drain electrode are formed with the heterojunction material, a layer insulating is then deposited, its
Middle thick dielectric layer is located between gate electrode and drain electrode, adjacent gate electrode, and thickness is 200nm-700nm, and thin dielectric layer distinguishes position
Between thick dielectric layer and drain electrode and gate electrode and source electrode between, thickness is 5~10nm, grid leak region on the insulating layer
And between grid source region, silicide being formed with, silicide is bulk, can be to the insulating barrier immediately below silicide, intrinsic AlGaN layer
Compression is introduced with AlGaN doped layers, and the region of remaining intrinsic AlGaN layer in addition and AlGaN doped layers can be subject to
Tensile stress, by making block block width is smaller than so that intrinsic AlGaN layer and totally obtain tensile stress with AlGaN doped layers, from
And being strengthened 2DEG in raceway groove, described silicide includes NiSi, TiSi2Or Co2Si, by the silicide in thick dielectric layer
Grid field plate structure is electrically connected to form with gate electrode.Finally deposit the passivation that passivation layer realizes device.Backing material in the present invention
It is sapphire, carborundum, GaN or MgO, the component of Al and Ga can be adjusted in intrinsic AlGaN layer and AlGaN doped layers,
AlxGa1-xX=0~1 in N, intrinsic GaN layer can replace with AlGaN layer, and the component of Al is little in the AlGaN after the replacement
In intrinsic AlGaN layer and the Al components of AlGaN doped layers, the silicide in thick dielectric layer and gate electrode are electrically connected to form into grid field
Hardened structure, improves the breakdown voltage of device.
Embodiments of the invention are the foregoing is only, the present invention is not limited to.The present invention can have various conjunctions
Suitable change and change.All any modification, equivalent substitution and improvements made within the spirit and principles in the present invention etc., all should
It is included within protection scope of the present invention.
Claims (6)
- It is 1. a kind of to add grid field plate depletion-mode AlGaN/GaN HEMT device structures, it is characterised in that：The structure includes substrate, sheet Levy GaN layer, AlN separation layers, intrinsic AlGaN layer, AlGaN doped layers, gate electrode, source electrode, drain electrode, grid field plate, insulating barrier, Passivation layer and the silicide for adjusting two-dimensional electron gas；The AlN separation layers are located on intrinsic GaN layer, described Intrinsic AlGaN be located at the separation layer on, the AlGaN doped layers be located at intrinsic AlGaN layer on, gate electrode, source electrode, Drain electrode and insulating barrier are located on AlGaN doped layers, and silicide is located on insulating barrier；There is consumption in substrate Epitaxial growth Most type AlGaN/GaN heterojunction material, the AlGaN in the AlGaN/GaN heterojunction materials be by intrinsic AlGaN layer and AlGaN doped layers are collectively constituted, and GaN is exactly intrinsic GaN layer, and be formed with the heterojunction material gate electrode, source electrode and Drain electrode, then deposits a layer insulating, and wherein thick dielectric layer is located between gate electrode and drain electrode, adjacent gate electrode, thickness For 200nm-700nm, thin dielectric layer is respectively positioned at and gate electrode and source electrode between, thickness is between thick dielectric layer and drain electrode Between 5~10nm, grid leak region on the insulating layer and grid source region, silicide is formed with, silicide is bulk, can be to silication Insulating barrier, intrinsic AlGaN layer and AlGaN doped layers introducing compression immediately below thing, and remaining intrinsic AlGaN in addition Layer and AlGaN doped layers region can be subject to tensile stress, be smaller than block width by making block so that intrinsic AlGaN layer and AlGaN doped layers totally obtain tensile stress, so that 2DEG is strengthened in raceway groove, described silicide includes NiSi, TiSi2 Or Co2Si, by the silicide in thick dielectric layer and gate electrode grid field plate structure is electrically connected to form, and is finally deposited passivation layer and is realized device The passivation of part.
- 2. according to claim 1 plus grid field plate depletion-mode AlGaN/GaN HEMT device structures, it is characterised in that：Wherein Backing material be sapphire, carborundum, GaN or MgO.
- 3. according to claim 1 plus grid field plate depletion-mode AlGaN/GaN HEMT device structures, it is characterised in that：Wherein AlGaN in the component of Al and Ga can adjust, AlxGa1-xX=0~1 in N.
- 4. according to claim 1 plus grid field plate depletion-mode AlGaN/GaN HEMT device structures, it is characterised in that：Its Levy GaN layer and replace with AlGaN layer, and the component of Al is less than intrinsic AlGaN layer and AlGaN doped layers in the AlGaN after the replacement Al components.
- 5. according to claim 1 plus grid field plate depletion-mode AlGaN/GaN HEMT device structures, it is characterized by：Positioned at thickness Silicide on insulating barrier is electrically connected to form grid field plate structure with gate electrode, improves the breakdown voltage of device.
- 6., based on the preparation method for adding grid field plate depletion-mode AlGaN/GaN HEMT device structures, comprise the steps：(1) organic washing is carried out to epitaxially grown AlGaN/GaN materials, is cleaned and be put into HCl with the deionized water of flowing: H2O Corrosion 30-60s is carried out in the solution of=1: 1 volume ratio, is finally cleaned and is dried up with high pure nitrogen with the deionized water of flowing；(2) the AlGaN/GaN materials to cleaning up carry out photoetching and dry etching, form active region mesa；(3) the AlGaN/GaN materials to preparing table top carry out photoetching, form source-drain area, are put in electron beam evaporation platform and deposit Metal ohmic contact Ti/Al/Ni/Au=20/120/45/50nm is simultaneously peeled off, finally carry out in nitrogen environment 850 DEG C, The rapid thermal annealing of 35s, forms Ohmic contact；(4) device is put in magnetron sputtering reative cell and prepares Al2O3Film, process conditions are：The DC offset voltage of Al targets is 100V, Ar throughput is 30sccm, O2Flow is 10sccm, and the pressure of reative cell is 0.5Pa, deposits the thick Al of 300nm2O3It is thin Film；(5) device to completing to deposit carries out photoetching development, forms Al2O3The wet etching area of film, is put into HF: H by material2O In the solution of=1: 10 volume ratios, corrode 3min~5min, by Al2O3Corrode to 5-10nm；(6) and then by device it is put in the reative cell of magnetron sputtering and sputter simultaneously Ni and Si, process conditions is：The direct current of Ni targets is inclined It is 100V to put voltage, and the radio-frequency bias voltage of Si targets is 450V, and the flow of carrier gas Ar is 30sccm, codeposition 100nm~150nm Thick hybrid metal film；(7) device for having deposited film is carried out into photoetching, forms the etching window area of mixed film, and be put into ICP dry etchings In reative cell, process conditions are：Upper electrode power is 200W, and lower electrode power is 20W, and chamber pressure is 1.5Pa, CF4's Flow is 20sccm, and the flow of Ar gas is 10sccm, and etch period is 5min, is stayed on device after dry etching Silicide is bulk, and causes to be smaller than silicide agglomeration width between silicide agglomeration；(8) device is put in quick anneal oven, 450 DEG C is carried out in a nitrogen environment, the rapid thermal annealing of 30s forms NiSi Alloy, silicide can be to Al2O3Insulating medium layer and AlGaN layer introduce compression, and the AlGaN layer between silicide is subject to open and answers Power, by making block block width is smaller than so that AlGaN layer totally obtains tensile stress, so that 2DEG is strengthened in raceway groove；(9) device to completing alloy carries out photoetching, forms gate electrode and grid field plate region, and device is put into into HF: H2O=1: By the Al in gate electrode region in 10 volume ratio solution2O3Corrode completely, form gate electrode and grid field plate window, be then placed in electricity Ni/Au=20/200nm is deposited in beamlet evaporator and is peeled off, complete the preparation of gate electrode and grid field plate；(10) device for completing gate electrode preparation is put into into deposit SiN films in PECVD device, concrete technology condition is：SiH4's Flow is 40sccm, NH3Flow be 10sccm, chamber pressure be 1~2Pa, radio-frequency power is 40W, deposit 200nm~ 300nm thick SiN passivating films；(11) device is cleaned again, photoetching development, formed SiN films etched area, and be put into ICP dry etchings reaction In room, process conditions are：Upper electrode power is 200W, and lower electrode power is 20W, and chamber pressure is 1.5Pa, CF4Flow For 20sccm, the flow of Ar gas is 10sccm, and etch period is 10min, and source electrode, gate electrode, drain electrode are covered above SiN and Al2O3Film is etched away；(12) device is cleaned, photoetching development, and be put in electron beam evaporation platform deposit Ti/Au=20/200nm thickening Electrode, completes the preparation of integral device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410025458.2A CN103904113B (en) | 2014-01-20 | 2014-01-20 | Depletion type AlGaN / GaN HEMT component structure with gate field plate and manufacturing method of depletion type AlGaN / GaN HEMT component structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410025458.2A CN103904113B (en) | 2014-01-20 | 2014-01-20 | Depletion type AlGaN / GaN HEMT component structure with gate field plate and manufacturing method of depletion type AlGaN / GaN HEMT component structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103904113A CN103904113A (en) | 2014-07-02 |
| CN103904113B true CN103904113B (en) | 2017-05-17 |
Family
ID=50995354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410025458.2A Expired - Fee Related CN103904113B (en) | 2014-01-20 | 2014-01-20 | Depletion type AlGaN / GaN HEMT component structure with gate field plate and manufacturing method of depletion type AlGaN / GaN HEMT component structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103904113B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111223824B (en) * | 2018-11-27 | 2021-11-09 | 世界先进积体电路股份有限公司 | Semiconductor device and method of forming the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101410985A (en) * | 2006-03-29 | 2009-04-15 | 克里公司 | High efficiency and/or high power density wide bandgap transistors |
| CN101414624A (en) * | 2008-12-01 | 2009-04-22 | 西安电子科技大学 | Gamma gate heterojunction field effect transistor and preparation method thereof |
| CN101414626A (en) * | 2008-12-01 | 2009-04-22 | 西安电子科技大学 | Insulated gate type gate-leakage composite field plate power device |
-
2014
- 2014-01-20 CN CN201410025458.2A patent/CN103904113B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101410985A (en) * | 2006-03-29 | 2009-04-15 | 克里公司 | High efficiency and/or high power density wide bandgap transistors |
| CN101414624A (en) * | 2008-12-01 | 2009-04-22 | 西安电子科技大学 | Gamma gate heterojunction field effect transistor and preparation method thereof |
| CN101414626A (en) * | 2008-12-01 | 2009-04-22 | 西安电子科技大学 | Insulated gate type gate-leakage composite field plate power device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103904113A (en) | 2014-07-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102386223B (en) | High-threshold voltage gallium nitride (GaN) enhancement metal oxide semiconductor heterostructure field effect transistor (MOSHFET) device and manufacturing method | |
| CN104393039B (en) | InAlN/AlGaN enhanced-type high-electron mobility transistor and manufacturing method thereof | |
| CN103904114B (en) | Add source field plate enhanced AlGaN/GaN HEMT device architecture and preparation method thereof | |
| CN102082176A (en) | Gallium nitride (GaN) enhancement type metal insulator semiconductor field effect transistor (MISFET) device and manufacturing method thereof | |
| CN103904111B (en) | Based on enhanced AlGaN/GaN HEMT device structure and preparation method thereof | |
| CN103745992B (en) | AlGaN/GaN MISHEMT high tension apparatus based on compound drain electrode and preparation method thereof | |
| CN104037218B (en) | A kind of high-performance AlGaN/GaN HEMT high-voltage device structure based on polarity effect and manufacture method | |
| CN109950323B (en) | Polarized superjunction III-nitride diode device and manufacturing method thereof | |
| CN105405878B (en) | The insulated gate AlGaN/GaN high electron mobility transistor of more channel side grid structures | |
| CN103779406B (en) | Add source field plate depletion type insulated gate AlGaN/GaN device architecture and preparation method thereof | |
| CN103745990B (en) | Depletion-mode AlGaN/GaN MISHEMT high tension apparatus and preparation method thereof | |
| CN104064595B (en) | A kind of enhanced AlGaN based on slot grid structure/GaN MISHEMT device architecture and preparation method thereof | |
| CN103904112B (en) | Depletion type insulated gate AlGaN/GaN device architecture and preparation method thereof | |
| CN103762234B (en) | Based on the AlGaN/GaN MISHEMT high tension apparatus and preparation method thereof of super junction leakage field plate | |
| CN103779409B (en) | Depletion-type AlGaN/GaN HEMT structure and manufacturing method thereof | |
| CN104037217B (en) | AlGaN/GaN HEMT switching element structure based on composite dipole layer and manufacturing method | |
| CN103996707B (en) | Add grid field plate enhanced AlGaN/GaN HEMT device structure and preparation method thereof | |
| CN103904110B (en) | Add grid field plate depletion type insulated gate AlGaN/GaN device architecture and preparation method thereof | |
| CN104037215B (en) | Reinforced AlGaN/GaN MISHEMT element structure based on polymer and manufacturing method thereof | |
| CN103904113B (en) | Depletion type AlGaN / GaN HEMT component structure with gate field plate and manufacturing method of depletion type AlGaN / GaN HEMT component structure | |
| CN103794643B (en) | A kind of based on groove grid high tension apparatus and preparation method thereof | |
| CN103779408B (en) | Based on depletion type groove grid AlGaN/GaN HEMT device structure and preparation method thereof | |
| CN103779407B (en) | Add source field plate depletion-mode AlGaN/GaN HEMT device architecture and preparation method thereof | |
| CN103779398B (en) | Band source field plate groove grid AIGaN/GaN HEMT device architecture and preparation method thereof | |
| Zhang et al. | Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170517 Termination date: 20220120 |