CN103779408B - Based on depletion type groove grid AlGaN/GaN HEMT device structure and preparation method thereof - Google Patents
Based on depletion type groove grid AlGaN/GaN HEMT device structure and preparation method thereof Download PDFInfo
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- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 70
- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 44
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 27
- 230000004888 barrier function Effects 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 14
- 238000002161 passivation Methods 0.000 claims abstract description 14
- 230000008569 process Effects 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 230000005684 electric field Effects 0.000 claims abstract description 7
- 229910005883 NiSi Inorganic materials 0.000 claims abstract description 6
- 229910008479 TiSi2 Inorganic materials 0.000 claims abstract description 4
- 230000001105 regulatory effect Effects 0.000 claims abstract description 4
- 238000007789 sealing Methods 0.000 claims abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000001259 photo etching Methods 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000005054 agglomeration Methods 0.000 claims description 6
- 230000002776 aggregation Effects 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 239000010408 film Substances 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 238000005036 potential barrier Methods 0.000 claims description 4
- 238000004151 rapid thermal annealing Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000013049 sediment Substances 0.000 claims description 3
- 238000000231 atomic layer deposition Methods 0.000 claims description 2
- 239000012159 carrier gas Substances 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 230000003628 erosive effect Effects 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- 229910001868 water Inorganic materials 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims 13
- 229910021244 Co2Si Inorganic materials 0.000 claims 1
- 238000004140 cleaning Methods 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 4
- 230000005533 two-dimensional electron gas Effects 0.000 description 7
- 230000010287 polarization Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 241000160765 Erebia ligea Species 0.000 description 1
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- 230000008021 deposition Effects 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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Abstract
The invention discloses a kind of based on depletion type groove grid AlGaN/GaN HEMT device structure and preparation method thereof, mainly solve current AlGaN/GaN high mobility transistor and obtain high-frequency problem.Described structure includes substrate, intrinsic GaN layer, AlN sealing coat, intrinsic AlGaN layer, AlGaN doped layer, gate electrode, source electrode, drain electrode, insulating barrier, passivation layer and for regulating the silicide of raceway groove electric field.AlGaN doped layer is positioned on intrinsic AlGaN layer, and electrode and insulating barrier are positioned on AlGaN layer, and silicide is positioned on insulating barrier.At substrate Epitaxial growth depletion-mode AlGaN/GaN heterojunction material, and form groove grid, source electrode and drain electrode on this structure, then deposit a layer insulating, on the insulating layer (between grid leak region and grid source region), form silicide (NiSi, TiSi2Etc.).Finally deposit passivation layer realizes the passivation of device.The present invention has the advantage that device frequency height, process repeatability and controllability are high, can be used for the depletion-mode AlGaN/GaN HEMT device of low on-resistance high workload frequency.
Description
Technical field
The invention belongs to microelectronics technology, relate to semiconductor device and make, a kind of based on depletion type
The AlGaN/GaN HEMT device structure of slot grid structure and manufacture method, can be used for making low on-resistance altofrequency
Depletion high electron mobility transistors.
Background technology
The 3rd bandwidth bandgap quasiconductor with SiC and GaN as representative is big with its energy gap in recent years, breakdown potential
The characteristic such as high, thermal conductivity is high, saturated electrons speed big and heterojunction boundary two-dimensional electron gas is high so that it is be subject to
Extensive concern.In theory, high electron mobility transistor (HEMT), light emitting diode that these materials make are utilized
The device such as LED, laser diode LD has obvious advantageous characteristic than existing device, the most domestic and international
It is had made extensive and intensive studies by researcher, and achieves the achievement in research attracted people's attention.
AlGaN/GaN hetero-junctions high electron mobility transistor (HEMT) is in high-temperature device and HIGH-POWERED MICROWAVES device side
Face has had shown that advantageous advantage, pursuit device altofrequency, high pressure, high power have attracted numerous research.
In recent years, make higher frequency high pressure AlGaN/GaN HEMT and become the another study hotspot of concern.Due to
After AlGaN/GaN hetero-junctions has grown, heterojunction boundary exists for a large amount of two-dimensional electron gas 2DEG, works as interface
When resistivity reduces, we can obtain higher device frequency characteristic.AlGaN/GaN hetero-junctions electron mobility
Transistor can obtain the highest frequency, but often will be to sacrifice high pressure resistant property as cost.Improve at present
The method of AlGaN/GaN heterojunction transistor frequency is as follows:
1. combine without passivated dielectric medium (dielectric-free passivation) with long Ohmic contact of living again to reduce electricity
Resistance rate.See the InAlN/AlN/GaN HEMTs With such as Yuanzheng Yue, Zongyang Hu, Jia Guo
Regrown Ohmic Contacts and f_{T}of370GH.EDL.Vol33.NO.7, P1118-P1120.
The process employs 30 nanometer grid long, and combine without passivated dielectric medium (dielectric-free passivation) and weight
Growth Ohmic contact reduces source and drain resistivity.Frequency can reach 370GHz.Can also be by reducing channel length
Continue to improve frequency to 500GHz.
2. long heavy-doped source of living again drains to the Two-dimensional electron gas channel of nearly grid.See Shinohara, K.Regan,
The self-aligned-gate GaN-HEMTs with heavily-doped n+-GaN ohmic such as D.Corrion, A.Brown
contacts to2DEG；IEDM, IEEE；2012.Long n+GaN Ohmic contact of living again in the past is to reducing channel junction
Electric shock resistance achieves noticeable achievement, but the Two-dimensional electron gas channel that heavy-doped source drain contact is directly arrived under grid can obtain
Preferably frequency characteristic and current characteristics.In literary composition, the method for report makes frequency reach fT/ fmax=342/518GHz.
Breakdown voltage 14V simultaneously.
Summary of the invention
Present invention aims to the deficiency of above altofrequency device, it is provided that raceway groove is produced by one based on silicide
The method of stress, to improve the frequency characteristic of depletion-mode AlGaN/GaN high mobility transistor simultaneously, strengthens technique
Controllability and repeatability, meet GaN base electronic device to altofrequency, the application requirement of low on-resistance.
The present invention is achieved in that
The technical thought of the present invention is: use epitaxial growth the method etched grow thin dielectric layer on AlGaN,
Growing multiple bulk silicon compound on thin dielectric layer, silicide agglomeration is smaller than block width, due to the thermal expansion of silicide
Coefficient is more than the thermal coefficient of expansion of insulating barrier with AlGaN.When epitaxial growth cools down, silicide can to insulating barrier with
And AlGaN layer introduces compressive stress, meanwhile, the AlGaN layer between silicide will be by tensile stress.
When AlGaN layer by compressive stress when, the 2DEG concentration being positioned at AlGaN/GaN interface has reduced, and works as
The when that AlGaN layer being by tensile stress, the 2DEG concentration being positioned at AlGaN/GaN interface increased.AlGaN
The size of layer institute's compression chord (tensile stress) is relevant with the length of silicide (silicide spacing), and this relation is not
It is a kind of linear relationship, and is treated as the impact on polarization charge of the use stress in time reducing suffered by AlGaN layer
Increase sharply (as shown below), so we can make the spacing difference between the width of silicide, silicide
Realizing the regulation of two-dimensional electron gas, the increase of 2DEG concentration still reduces on the whole, depends on the two
Magnitude relationship, in this invention, we select make two-dimensional electron gas increase to reduce channel resistance.So
Stress is greater than compressive stress, and then silicide width is greater than silicide spacing.If as in figure 2 it is shown, silicide
Width is 1mm, and silicide spacing is 0.25mm. what so silicide spacing (0.25mm) region was stood opens
Power effect makes polarization charge finally two orders of magnitude bigger than the polarization charge of silicide regions (1mm), so on the whole
Effect show as AlGaN layer and be increased by the i.e. polarization charge concentration of tensile stress, thus between grid source and between grid leak
The concentration of 2DEG also presents the result of overall increase because of the increase of polarization charge.Therefore the resistance in this region has
Reduced.See IEICE TRANS.ELECTON, VOL.E93-C, NO.8AUGUST2010.Analysis of
Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs.
Make the length being smaller than silicide between silicide by selection, make the growth of 2DEG concentration much larger than 2DEG
The reduction of concentration, so that the resistance between grid leak and grid source has reduced, carry in the case of not changing grid leak spacing
The frequency characteristic of high high mobility transistor.Grid uses slot grid structure, improves the frequency characteristic of the present invention.
According to above-mentioned technical thought, the depletion-mode AlGaN of the present invention/GaN high-frequency element, including substrate, intrinsic GaN
Layer, AlN sealing coat, AlGaN potential barrier (intrinsic AlGaN layer), AlGaN doped layer, gate electrode, source electrode,
Drain electrode, insulating barrier, passivation layer and for regulating the silicide of raceway groove electric field.AlGaN doped layer is positioned at barrier layer
On, electrode and insulating barrier are positioned on AlGaN layer, and silicide is positioned on insulating barrier.Extension on substrate
Growth depletion-mode AlGaN/GaN heterojunction material, and form groove grid, source electrode and drain electrode on this structure, then form sediment
A long-pending layer insulating, on the insulating layer (between grid leak region and grid source region), forms silicide (NiSi, TiSi2Deng
Deng).Finally deposit passivation layer realizes the passivation of device.
As it is shown on figure 3, according to above-mentioned technical thought, utilize metal silicide to improve AlGaN/GaN HEMT device
The structure of performance, comprises the steps:
(1) epitaxially grown AlGaN/GaN material is carried out organic washing, clean with the deionized water of flowing and put
Enter HCl: H2The solution of O=1: 1 carries out corroding 30-60s, finally cleans with the deionized water of flowing and use High Purity Nitrogen
Air-blowing is done；
(2) the AlGaN/GaN material cleaned up is carried out photoetching and dry etching, be formed with region meas；
(3) the AlGaN/GaN material preparing table top is carried out photoetching, form source-drain area, put into electron beam evaporation
Platform deposits metal ohmic contact Ti/Al/Ni/Au=(20/120/45/50nm) and peels off, finally in nitrogen environment
Carry out the rapid thermal annealing of 850 DEG C of 35s, form Ohmic contact；
(4) putting in atomic layer deposition apparatus by device, process conditions are: growth temperature is 300 DEG C, and pressure is
2000Pa, H2The flow of O and TMAl is 150sccm, the Al that deposit 5-10nm is thick2O3Medium；
(5) then being put into by device in the reative cell of magnetron sputtering and sputter Ni and Si simultaneously, process conditions are: Ni target
DC offset voltage be the radio-frequency bias voltage of 100V, Si target be 450V, the flow of carrier gas Ar is 30sccm, forms sediment altogether
Long-pending hybrid metal thin film thick for 100nm～150nm；
(6) device having deposited thin film is carried out photoetching, form the etching window district of mixed film, and put into ICP dry method
In etching reaction chamber, process conditions are: upper electrode power is 200W, and lower electrode power is 20W, chamber pressure
For 1.5Pa, CF4The flow that flow is 20sccm, Ar gas be 10sccm, etch period is 5min；
(7) device is put in quick anneal oven, carry out 450 DEG C in a nitrogen environment, the rapid thermal annealing of 30s, shape
Become NiSi alloy；
(8) device completing alloy is carried out photoetching, formed gate metal region, and device is put into ICP dry method carve
In erosion reative cell, process conditions are: upper electrode power is 200W, and lower electrode power is 20W, and chamber pressure is
1.5Pa, Cl2The flow that flow is 10sccm, Ar gas be 10sccm, etch period is about 2～3min, etches away grid
The Al in region2O3Dielectric layer and part AlGaN potential barrier 5～10nm；Then device is put into HCl: H2O=1: 1
Solution in etch residue is removed, with flowing deionized water clean and dry up after put into electron beam evaporation platform
Middle deposit Ni/Au=20/200nm also peels off, and completes the preparation of gate electrode；
(9) PECVD reative cell deposit SiN passivating film, concrete technology condition are put into by completing device prepared by grid
For: SiH4Flow be 40sccm, NH3Flow be 10sccm, chamber pressure is 1～2Pa, and radio-frequency power is
40W, the SiN passivating film that deposit 200nm～300nm is thick；
(10) device is carried out again, photoetching development, formed SiN thin film etched area, and put into ICP do
In method etching reaction chamber, process conditions are: upper electrode power is 200W, and lower electrode power is 20W, react chamber pressure
Power is 1.5Pa, CF4The flow that flow is 20sccm, Ar gas be 10sccm, etch period is 10min, by source electrode,
SiN and Al that grid, drain electrodes cover2O3Thin film etches away；
(11) device is carried out, photoetching development, and put in electron beam evaporation platform deposit Ti/Au=20/200nm
Add thick electrode, complete the preparation of integral device.
Present invention have the advantage that
(1) method that the device of the present invention uses deposition insulating layer and silicide, produces stress effect to AlGaN, adjusts
Electron gas concentration and electric field intensity in joint raceway groove.Improve device frequency characteristic.
(2) in the present invention, institute's depositing silicide, between grid leak and grid source, need not subtract while improving frequency characteristic
Few grid leak distance, thus without sacrificing high pressure resistant property.
(3) owing to size and the spacing of silicide can be regulated between grid leak and grid source as required in the present invention,
Thus regulate stress effect size.Electron gas concentration and frequency characteristic can be adjusted as required between grid source and between grid leak
Joint.
(4) owing to using slot grid structure in the present invention, improve the grid control action to two-dimensional electron gas, thus improve
The operating frequency of device.
Accompanying drawing explanation
The exemplary embodiment of the present invention it is more fully described, the above and other side of the present invention by referring to accompanying drawing
Face and advantage will become the clearest, in the accompanying drawings:
Fig. 1 is the cross-sectional view of device of the present invention；
Fig. 2 is physical principle explanatory diagram (polarization charge is with the change of silicide width)；
Fig. 3 is the fabrication processing schematic diagram of device of the present invention.
Detailed description of the invention
Hereinafter, it is more fully described the present invention, various enforcements shown in the drawings now with reference to accompanying drawing
Example.But, the present invention can implement in many different forms, and should not be construed as limited to explain at this
The embodiment stated.On the contrary, it is provided that these embodiments make the disclosure will be thoroughly and completely, and by the present invention
Scope be fully conveyed to those skilled in the art.
Hereinafter, the exemplary embodiment of the present invention it is more fully described with reference to the accompanying drawings.
With reference to Fig. 1, device of the present invention includes substrate, intrinsic GaN layer, AlN sealing coat, AlGaN potential barrier (this
Levy AlGaN layer), AlGaN doped layer, gate electrode, source electrode, drain electrode, insulating barrier, passivation layer and be used for
The silicide of regulation raceway groove electric field.AlGaN doped layer is positioned on barrier layer, and electrode and insulating barrier are positioned at AlGaN
On Ceng, silicide is positioned on insulating barrier.At substrate Epitaxial growth depletion-mode AlGaN/GaN heterojunction material,
And form groove grid, source electrode and drain electrode on this structure, then deposit a layer insulating, on the insulating layer (grid leak region
And between grid source region), form silicide (NiSi, TiSi2Etc.).Finally deposit passivation layer realizes the passivation of device.
The foregoing is only embodiments of the invention, be not limited to the present invention.The present invention can have various conjunction
Suitable change and change.All any modification, equivalent substitution and improvement etc. made within the spirit and principles in the present invention,
Should be included within the scope of the present invention.
Claims (6)
1. one kind based on depletion type groove grid AlGaN/GaN HEMT device structure, it is characterised in that: described structure bag
Include substrate, intrinsic GaN layer, AlN sealing coat, intrinsic AlGaN layer, AlGaN doped layer, gate electrode, source electricity
Pole, drain electrode, insulating barrier, passivation layer and for regulating the silicide of raceway groove electric field；Described AlGaN doped layer
Being positioned on intrinsic AlGaN layer, electrode and insulating barrier are positioned on AlGaN doped layer, and silicide is positioned at insulation
On Ceng；At substrate Epitaxial growth depletion-mode AlGaN/GaN heterojunction material, and shape on this heterojunction material
Become source electrode and drain electrode, between source electrode and drain electrode, etch heterojunction material form groove, formed in groove
Gate electrode, then deposits a layer insulating, and insulating barrier lays respectively between gate electrode and drain electrode and gate electrode is electric with source
Between pole, the thickness of insulating barrier is 5-10nm, the region between grid leak electrode on the insulating layer and grid source electrode it
Between region, form silicide, silicide be bulk, and introduces stress, and block is smaller than block width, silicide
Following each layer can be produced compressive stress, the stress to block between block, will be produced, by making block be smaller than block width,
Following each layer can be made to obtain overall tensile stress, so that electric field is strengthened in raceway groove, described silicide includes
NiSi, TiSi2Or Co2Si, finally deposit passivation layer realizes the passivation of device.
The most according to claim 1 based on depletion type groove grid AlGaN/GaN HEMT device structure, its feature
It is: the material of substrate therein is sapphire, carborundum, GaN or MgO.
The most according to claim 1 based on depletion type groove grid AlGaN/GaN HEMT device structure, its feature
It is: in AlGaN therein, the component of Al with Ga can regulate, AlxGa1-xX=0～1 in N.
The most according to claim 1 based on depletion type groove grid AlGaN/GaN HEMT device structure, its feature
It is: its intrinsic GaN layer replaces with AlGaN layer, and in this AlGaN, the component of Al is less than intrinsic AlGaN layer
With the Al component in AlGaN doped layer.
The most according to claim 1 based on depletion type groove grid AlGaN/GaN HEMT device structure, its feature
It is: its grid uses slot grid structure.
6. manufacture method based on depletion type groove grid AlGaN/GaN HEMT device structure, it is characterised in that: include
Following steps:
(1) epitaxially grown AlGaN/GaN material is carried out organic washing, clean with the deionized water of flowing and put
Enter HCl: H2The solution of O=1: 1 volume ratio carries out corroding 30-60s, finally cleans with the deionized water of flowing and use
High pure nitrogen dries up；
(2) the AlGaN/GaN material cleaned up is carried out photoetching and dry etching, be formed with region meas；
(3) the AlGaN/GaN material preparing table top is carried out photoetching, form source-drain area, put into electron beam evaporation
Platform deposit metal ohmic contact Ti/Al/Ni/Au=20/120/45/50nm and peels off, finally entering in nitrogen environment
The rapid thermal annealing of 850 DEG C of 35s of row, forms Ohmic contact；
(4) putting in atomic layer deposition apparatus by device, process conditions are: growth temperature is 300 DEG C, and pressure is
2000Pa, H2The flow of O and TMAl is 150sccm, the Al that deposit 5-10nm is thick2O3Medium；
(5) then being put into by device in the reative cell of magnetron sputtering and sputter Ni and Si simultaneously, process conditions are: Ni target
DC offset voltage be the radio-frequency bias voltage of 100V, Si target be 450V, the flow of carrier gas Ar is 30sccm, forms sediment altogether
Long-pending hybrid metal thin film thick for 100nm～150nm；
(6) device having deposited thin film is carried out photoetching, form the etching window district of mixed film, and put into ICP dry method
In etching reaction chamber, process conditions are: upper electrode power is 200W, and lower electrode power is 20W, chamber pressure
For 1.5Pa, CF4The flow that flow is 20sccm, Ar gas be 10sccm, etch period is 5min, through dry method
The silicide stayed on device after etching is bulk, and makes to be smaller than silicide agglomeration width between silicide agglomeration
Degree；
(7) device is put in quick anneal oven, carry out 450 DEG C in a nitrogen environment, the rapid thermal annealing of 30s, shape
Becoming NiSi alloy, silicide can produce compressive stress to following each layer, will produce the stress to block between silicide agglomeration,
By making silicide agglomeration be smaller than silicide agglomeration width, following each layer can be made to obtain overall tensile stress, so that ditch
In road, electric field is strengthened；
(8) device completing alloy is carried out photoetching, formed gate metal region, and device is put into ICP dry method carve
In erosion reative cell, process conditions are: upper electrode power is 200W, and lower electrode power is 20W, and chamber pressure is
1.5Pa, Cl2The flow that flow is 10sccm, Ar gas be 10sccm, etch period is about 2～3min, etches away grid
The Al in region2O3Dielectric layer and part AlGaN potential barrier 5～10nm；Then device is put into HCl: H2O=1: 1
Etch residue is removed by the solution of volume ratio, after cleaning with the deionized water of flowing and dry up, puts into electron beam
Evaporator deposit Ni/Au=20/200nm and peels off, completing the preparation of gate electrode；
(9) PECVD reative cell deposit SiN passivating film, concrete technology condition are put into by completing device prepared by grid
For: SiH4Flow be 40sccm, NH3Flow be 10sccm, chamber pressure is 1～2Pa, and radio-frequency power is
40W, the SiN passivating film that deposit 200nm～300nm is thick；
(10) device is carried out again, photoetching development, formed SiN thin film etched area, and put into ICP do
In method etching reaction chamber, process conditions are: upper electrode power is 200W, and lower electrode power is 20W, react chamber pressure
Power is 1.5Pa, CF4The flow that flow is 20sccm, Ar gas be 10sccm, etch period is 10min, by source electrode,
SiN and Al that grid, drain electrodes cover2O3Thin film etches away；
(11) device is carried out, photoetching development, and put in electron beam evaporation platform deposit Ti/Au=20/200nm
Add thick electrode, complete the preparation of integral device.
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