ZA927163B - Power conversion device and semiconductor module suitable for use in the device. - Google Patents

Power conversion device and semiconductor module suitable for use in the device.

Info

Publication number
ZA927163B
ZA927163B ZA927163A ZA927163A ZA927163B ZA 927163 B ZA927163 B ZA 927163B ZA 927163 A ZA927163 A ZA 927163A ZA 927163 A ZA927163 A ZA 927163A ZA 927163 B ZA927163 B ZA 927163B
Authority
ZA
South Africa
Prior art keywords
power conversion
semiconductor module
module suitable
conversion device
semiconductor
Prior art date
Application number
ZA927163A
Other languages
English (en)
Inventor
Mutsuhiro Mori
Ryuichi Saito
Shin Kimura
Kiyoshi Nakata
Syuuji Saitoo
Akira Horie
Yoshihiko Koike
Shigeki Sekine
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of ZA927163B publication Critical patent/ZA927163B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
ZA927163A 1991-09-20 1992-09-18 Power conversion device and semiconductor module suitable for use in the device. ZA927163B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3241681A JP2707883B2 (ja) 1991-09-20 1991-09-20 インバータ装置

Publications (1)

Publication Number Publication Date
ZA927163B true ZA927163B (en) 1993-03-22

Family

ID=17077940

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA927163A ZA927163B (en) 1991-09-20 1992-09-18 Power conversion device and semiconductor module suitable for use in the device.

Country Status (2)

Country Link
JP (1) JP2707883B2 (xx)
ZA (1) ZA927163B (xx)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE9502249D0 (sv) * 1995-06-21 1995-06-21 Abb Research Ltd Converter circuitry having at least one switching device and circuit module
SE512795C2 (sv) * 1998-09-18 2000-05-15 Abb Ab VSC-strömriktare
JP4691813B2 (ja) * 2001-03-30 2011-06-01 三菱電機株式会社 二重チョッパ用パワー基板
JP2006246576A (ja) * 2005-03-01 2006-09-14 Fuji Electric Holdings Co Ltd マルチレベルインバータ
KR101038175B1 (ko) * 2006-12-20 2011-05-31 미쓰비시덴키 가부시키가이샤 3 레벨 전력 변환 장치
EP3633723B1 (en) * 2009-05-14 2023-02-22 Rohm Co., Ltd. Semiconductor device
WO2010146637A1 (ja) * 2009-06-19 2010-12-23 三菱電機株式会社 電力変換装置
JP5627700B2 (ja) * 2010-10-05 2014-11-19 三菱電機株式会社 電力変換装置
JP2013045882A (ja) * 2011-08-24 2013-03-04 Mitsubishi Electric Corp 半導体装置
CN103765749B (zh) * 2011-08-30 2016-09-07 三菱电机株式会社 半导体装置
KR101686313B1 (ko) 2012-04-26 2016-12-13 미쓰비시덴키 가부시키가이샤 파워 모듈 및 그것을 이용한 3레벨 전력 변환 장치
JP6079861B1 (ja) * 2015-12-16 2017-02-15 株式会社明電舎 共振負荷用電力変換装置および共振負荷用電力変換装置の時分割運転方法
JP6714834B2 (ja) * 2016-04-06 2020-07-01 富士電機株式会社 ３レベル電力変換回路
WO2018139172A1 (ja) * 2017-01-25 2018-08-02 株式会社日立製作所 電力変換装置及び電力変換方法
JP7408941B2 (ja) 2019-07-25 2024-01-09 富士電機株式会社 電力変換装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5966390U (ja) * 1982-10-22 1984-05-04 三菱電機株式会社 インバ−タ装置
JPS6344696U (xx) * 1986-09-02 1988-03-25
JP2685606B2 (ja) * 1989-11-17 1997-12-03 株式会社日立製作所 インバータ装置
JP2692765B2 (ja) * 1989-12-22 1997-12-17 株式会社日立製作所 ダイオード及びｉｇｂｔとの並列回路とそのモジュール及びそれを用いた電力変換装置

Also Published As

Publication number Publication date
JP2707883B2 (ja) 1998-02-04
JPH0583947A (ja) 1993-04-02

Similar Documents

Publication Publication Date Title
EP0680147A3 (en) Semiconductor power module and power converter device.
EP0547877A3 (en) Semiconductor power module
EP0538840A3 (en) Photovoltaic device
HK1003213A1 (en) Solar battery device.
EP0602699A3 (en) Semiconductor device with limited current energy.
GB2271411B (en) Power transfer device
EP0644599A3 (en) Device for generating thermoelectric energy.
EP0599605A3 (en) Semiconductor device having a current detection function.
EP0535681A3 (en) Semiconductor body, its manufacturing method, and semiconductor device using the body
EP0427143A3 (en) Semiconductor power module
EP0645814A3 (en) Power semiconductor switching module.
EP0539593A4 (en) Semiconductor device and built-in power circuit
ZA927163B (en) Power conversion device and semiconductor module suitable for use in the device.
SG80593A1 (en) Semiconductor memory device and memory module using the same
EP0448364A3 (en) Semiconductor storage device
GB2249434B (en) Portable semiconductor storage device
EP0551712A3 (en) Semiconductor device with field plates
EP1014451A4 (en) FLAT SEMICONDUCTOR DEVICE AND CURRENT CONVERTER USING THE SAME
EP0642178A3 (en) Semiconductor device for converting light and radiation into electrical energy.
EP0661758A3 (en) Apparatus suitable for using solar cells, or device adapted to the apparatus.
EP0534425A3 (en) Photovoltaic device
EP0641024A3 (en) Power semiconductor component.
GB2283376B (en) Power semiconductor device package
GB2228367B (en) Semiconductor device having matrix wiring section,and semiconductor device using the same and having photoelectric conversion function
GB2243493B (en) Portable semiconductor device