ZA90154B - A single atmosphere for firing copper compatible thick film materials - Google Patents
A single atmosphere for firing copper compatible thick film materialsInfo
- Publication number
- ZA90154B ZA90154B ZA90154A ZA90154A ZA90154B ZA 90154 B ZA90154 B ZA 90154B ZA 90154 A ZA90154 A ZA 90154A ZA 90154 A ZA90154 A ZA 90154A ZA 90154 B ZA90154 B ZA 90154B
- Authority
- ZA
- South Africa
- Prior art keywords
- thick film
- film materials
- single atmosphere
- copper compatible
- firing copper
- Prior art date
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title 1
- 229910052802 copper Inorganic materials 0.000 title 1
- 239000010949 copper Substances 0.000 title 1
- 238000010304 firing Methods 0.000 title 1
- 239000000463 material Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/702—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof
- H01L21/705—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof of thick-film circuits or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4867—Applying pastes or inks, e.g. screen printing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US30642989A | 1989-02-03 | 1989-02-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
ZA90154B true ZA90154B (en) | 1990-12-28 |
Family
ID=23185246
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ZA90154A ZA90154B (en) | 1989-02-03 | 1990-01-09 | A single atmosphere for firing copper compatible thick film materials |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0381430A3 (xx) |
JP (1) | JP2601554B2 (xx) |
KR (1) | KR900013575A (xx) |
AU (1) | AU625722B2 (xx) |
CA (1) | CA2007199C (xx) |
ZA (1) | ZA90154B (xx) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000124157A (ja) * | 1998-08-10 | 2000-04-28 | Vacuum Metallurgical Co Ltd | Cu薄膜の形成法 |
US8053867B2 (en) | 2008-08-20 | 2011-11-08 | Honeywell International Inc. | Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants |
US7951696B2 (en) | 2008-09-30 | 2011-05-31 | Honeywell International Inc. | Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes |
US8518170B2 (en) | 2008-12-29 | 2013-08-27 | Honeywell International Inc. | Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks |
US8324089B2 (en) | 2009-07-23 | 2012-12-04 | Honeywell International Inc. | Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions |
US8629294B2 (en) | 2011-08-25 | 2014-01-14 | Honeywell International Inc. | Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants |
US8975170B2 (en) | 2011-10-24 | 2015-03-10 | Honeywell International Inc. | Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4234367A (en) * | 1979-03-23 | 1980-11-18 | International Business Machines Corporation | Method of making multilayered glass-ceramic structures having an internal distribution of copper-based conductors |
JPS59995A (ja) * | 1982-06-16 | 1984-01-06 | 富士通株式会社 | 銅導体多層構造体の製造方法 |
JPS60149191A (ja) * | 1984-01-17 | 1985-08-06 | 株式会社日立製作所 | Lsi実装基板の製造方法 |
US4622240A (en) * | 1985-11-12 | 1986-11-11 | Air Products And Chemicals, Inc. | Process for manufacturing thick-film electrical components |
JPS6369786A (ja) * | 1986-09-09 | 1988-03-29 | 電気化学工業株式会社 | メタライズ層をもつた窒化アルミニウム基板の製法 |
CA1274430A (en) * | 1986-10-14 | 1990-09-25 | E. I. Du Pont De Nemours And Company | Controlled atmosphere firing process |
US4772488A (en) * | 1987-03-23 | 1988-09-20 | General Electric Company | Organic binder removal using CO2 plasma |
JPS6441298A (en) * | 1987-08-07 | 1989-02-13 | Mitsubishi Electric Corp | Manufacture of ceramic circuit substrate |
-
1990
- 1990-01-05 CA CA002007199A patent/CA2007199C/en not_active Expired - Fee Related
- 1990-01-09 ZA ZA90154A patent/ZA90154B/xx unknown
- 1990-01-25 AU AU48836/90A patent/AU625722B2/en not_active Ceased
- 1990-01-30 EP EP19900300930 patent/EP0381430A3/en not_active Withdrawn
- 1990-02-02 KR KR1019900001275A patent/KR900013575A/ko not_active Application Discontinuation
- 1990-02-03 JP JP2025008A patent/JP2601554B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0381430A2 (en) | 1990-08-08 |
EP0381430A3 (en) | 1991-05-02 |
JP2601554B2 (ja) | 1997-04-16 |
KR900013575A (ko) | 1990-09-06 |
CA2007199A1 (en) | 1990-08-03 |
JPH02277282A (ja) | 1990-11-13 |
AU625722B2 (en) | 1992-07-16 |
CA2007199C (en) | 1993-05-18 |
AU4883690A (en) | 1990-08-09 |
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