ZA877921B - Condensate diamond - Google Patents

Condensate diamond

Info

Publication number
ZA877921B
ZA877921B ZA877921A ZA877921A ZA877921B ZA 877921 B ZA877921 B ZA 877921B ZA 877921 A ZA877921 A ZA 877921A ZA 877921 A ZA877921 A ZA 877921A ZA 877921 B ZA877921 B ZA 877921B
Authority
ZA
South Africa
Prior art keywords
diamond
condensate
condense
hydrogen
subjected
Prior art date
Application number
ZA877921A
Other languages
English (en)
Inventor
Richard Anthony Thomas
Charles Devries Robert
Original Assignee
General Electric Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Company filed Critical General Electric Company
Publication of ZA877921B publication Critical patent/ZA877921B/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Inorganic Fibers (AREA)
  • Lubricants (AREA)
  • Chemical Vapour Deposition (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
ZA877921A 1986-12-22 1987-10-21 Condensate diamond ZA877921B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US94472986A 1986-12-22 1986-12-22

Publications (1)

Publication Number Publication Date
ZA877921B true ZA877921B (en) 1988-04-21

Family

ID=25481962

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA877921A ZA877921B (en) 1986-12-22 1987-10-21 Condensate diamond

Country Status (9)

Country Link
EP (1) EP0272418B1 (fr)
JP (1) JPS63182297A (fr)
KR (1) KR960000063B1 (fr)
AT (1) ATE80672T1 (fr)
AU (1) AU598611B2 (fr)
BR (1) BR8706982A (fr)
DE (1) DE3781780T2 (fr)
IL (1) IL84526A (fr)
ZA (1) ZA877921B (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0776149B2 (ja) * 1987-10-15 1995-08-16 昭和電工株式会社 気相法によるダイヤモンド合成法
ZA888034B (en) * 1987-12-17 1989-06-28 Gen Electric Diamond growth process
WO1990005701A1 (fr) * 1988-11-16 1990-05-31 Andrew Carey Good Production de diamant
US5106452A (en) * 1989-06-05 1992-04-21 Semiconductor Energy Laboratory Co., Ltd. Method of depositing diamond and diamond light emitting device
DE3935865C1 (fr) * 1989-10-27 1990-10-04 Philips Patentverwaltung Gmbh, 2000 Hamburg, De
GB2240114B (en) * 1990-01-18 1993-03-24 Stc Plc Film nucleation process
SE9002136D0 (sv) * 1990-06-15 1990-06-15 Sandvik Ab Cement carbide body for rock drilling, mineral cutting and highway engineering
SE9002137D0 (sv) * 1990-06-15 1990-06-15 Diamant Boart Stratabit Sa Improved tools for cutting rock drilling
SE9002135D0 (sv) * 1990-06-15 1990-06-15 Sandvik Ab Improved tools for percussive and rotary crusching rock drilling provided with a diamond layer
SE9003251D0 (sv) * 1990-10-11 1990-10-11 Diamant Boart Stratabit Sa Improved tools for rock drilling, metal cutting and wear part applications
CA2077773A1 (fr) * 1991-10-25 1993-04-26 Thomas R. Anthony Procede de deposition chimique en phase vapeur assistee par chauffage a micro-ondes, hf, ca ou cc
US5417475A (en) * 1992-08-19 1995-05-23 Sandvik Ab Tool comprised of a holder body and a hard insert and method of using same
US5837071A (en) * 1993-11-03 1998-11-17 Sandvik Ab Diamond coated cutting tool insert and method of making same
JP3051912B2 (ja) * 1996-09-03 2000-06-12 科学技術庁無機材質研究所長 リンドープダイヤモンドの合成法
US6066399A (en) * 1997-03-19 2000-05-23 Sanyo Electric Co., Ltd. Hard carbon thin film and method of forming the same
US7402835B2 (en) 2002-07-18 2008-07-22 Chevron U.S.A. Inc. Heteroatom-containing diamondoid transistors
DE102009015545B4 (de) * 2009-03-02 2013-10-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Beschichtungsanlage mit Aktivierungselement, deren Verwendung sowie Verfahren zur Abscheidung einer Beschichtung
DE102009023471B4 (de) * 2009-06-02 2012-08-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Beschichtungsanlage und -verfahren
SG11201504017WA (en) 2012-11-21 2015-06-29 Nat Oilwell Dht Lp Fixed cutter drill bit cutter elements including hard cutting tables made from cvd synthetic diamonds

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58156594A (ja) * 1982-03-08 1983-09-17 Sumitomo Electric Ind Ltd 硬質被膜の製造法
JPS59232991A (ja) * 1983-06-16 1984-12-27 Sumitomo Electric Ind Ltd ダイヤモンド薄膜の製造法
JPS60221395A (ja) * 1984-04-19 1985-11-06 Yoshio Imai ダイヤモンド薄膜の製造方法
JPS61106494A (ja) * 1984-10-29 1986-05-24 Kyocera Corp ダイヤモンド被膜部材及びその製法
DE3768284D1 (de) * 1986-01-17 1991-04-11 Sumitomo Electric Industries Herstellung von diamant.
US4830702A (en) * 1987-07-02 1989-05-16 General Electric Company Hollow cathode plasma assisted apparatus and method of diamond synthesis
ZA888034B (en) * 1987-12-17 1989-06-28 Gen Electric Diamond growth process

Also Published As

Publication number Publication date
KR880007362A (ko) 1988-08-27
IL84526A0 (en) 1988-04-29
EP0272418A2 (fr) 1988-06-29
KR960000063B1 (ko) 1996-01-03
AU598611B2 (en) 1990-06-28
AU8195187A (en) 1988-06-23
IL84526A (en) 1991-09-16
ATE80672T1 (de) 1992-10-15
BR8706982A (pt) 1988-07-26
DE3781780D1 (de) 1992-10-22
JPH0472798B2 (fr) 1992-11-19
JPS63182297A (ja) 1988-07-27
DE3781780T2 (de) 1993-01-28
EP0272418B1 (fr) 1992-09-16
EP0272418A3 (en) 1989-06-07

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