ZA863217B - Process for the manufacture of shaped bodies from silicon granulates for producing silicon melts - Google Patents

Process for the manufacture of shaped bodies from silicon granulates for producing silicon melts

Info

Publication number
ZA863217B
ZA863217B ZA863217A ZA863217A ZA863217B ZA 863217 B ZA863217 B ZA 863217B ZA 863217 A ZA863217 A ZA 863217A ZA 863217 A ZA863217 A ZA 863217A ZA 863217 B ZA863217 B ZA 863217B
Authority
ZA
South Africa
Prior art keywords
silicon
granulates
manufacture
shaped bodies
melts
Prior art date
Application number
ZA863217A
Other languages
English (en)
Inventor
Joachim Geissler
Dieter Helmreich
Roland Luptovits
Maximilian Semmler
Burkhard Walter
Original Assignee
Heliotronic Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heliotronic Gmbh filed Critical Heliotronic Gmbh
Publication of ZA863217B publication Critical patent/ZA863217B/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)
ZA863217A 1985-05-24 1986-04-30 Process for the manufacture of shaped bodies from silicon granulates for producing silicon melts ZA863217B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19853518829 DE3518829A1 (de) 1985-05-24 1985-05-24 Verfahren zur herstellung von formkoerpern aus siliciumgranulat fuer die erzeugung von siliciumschmelzen

Publications (1)

Publication Number Publication Date
ZA863217B true ZA863217B (en) 1986-12-30

Family

ID=6271627

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA863217A ZA863217B (en) 1985-05-24 1986-04-30 Process for the manufacture of shaped bodies from silicon granulates for producing silicon melts

Country Status (6)

Country Link
US (1) US4759887A (xx)
EP (1) EP0203518B1 (xx)
JP (1) JPS61270111A (xx)
AU (1) AU584423B2 (xx)
DE (2) DE3518829A1 (xx)
ZA (1) ZA863217B (xx)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5204124A (en) * 1990-10-09 1993-04-20 Stanley Secretan Continuous extruded bead object fabrication apparatus
DE4307869C2 (de) * 1993-03-12 1996-04-04 Microparts Gmbh Mikrostrukturkörper und Verfahren zu deren Herstellung
US5534056A (en) * 1993-10-28 1996-07-09 Manfred R. Kuehnle Composite media with selectable radiation-transmission properties
DE19859288A1 (de) * 1998-12-22 2000-06-29 Bayer Ag Agglomeration von Siliciumpulvern
FR2853562B1 (fr) * 2003-04-14 2006-08-11 Centre Nat Rech Scient Procede de fabrication de granules semiconducteurs
US9493358B2 (en) * 2003-04-14 2016-11-15 Stile Photovoltaic module including integrated photovoltaic cells
US8192648B2 (en) * 2003-04-14 2012-06-05 S'tile Method for forming a sintered semiconductor material
US9741881B2 (en) 2003-04-14 2017-08-22 S'tile Photovoltaic module including integrated photovoltaic cells
US20090028740A1 (en) * 2003-04-14 2009-01-29 S'tile Method for the production of semiconductor granules
US8405183B2 (en) * 2003-04-14 2013-03-26 S'Tile Pole des Eco-Industries Semiconductor structure
EP1618612A1 (fr) * 2003-04-14 2006-01-25 Centre National De La Recherche Scientifique (Cnrs) Materiau semiconducteur obtenu par frittage
GB2414231A (en) * 2004-05-21 2005-11-23 Psimedica Ltd Porous silicon
WO2008057483A2 (en) * 2006-11-03 2008-05-15 Semlux Technologies, Inc. Laser conversion of high purity silicon powder to densified garnular forms
EP2289652B2 (de) * 2009-08-25 2022-09-28 BEGO Medical GmbH Vorrichtung und Verfahren zur generativen Fertigung
EP2289462B1 (de) * 2009-08-25 2012-05-30 BEGO Medical GmbH Vorrichtung und Verfahren zur kontinuierlichen, generativen Fertigung
DE102011003875A1 (de) * 2011-02-09 2012-08-09 Wacker Chemie Ag Verfahren und Vorrichtung zum Dosieren und Verpacken von Polysiliciumbruchstücken sowie Dosier- und Verpackungseinheit
DE202011003443U1 (de) 2011-03-02 2011-12-23 Bego Medical Gmbh Vorrichtung zur generativen Herstellung dreidimensionaler Bauteile
CN103319294B (zh) * 2013-06-08 2015-04-15 浙江大学 用Bi/Mo/V三组分复合氧化物催化剂合成1,3-丁二烯的方法
DE102015012939A1 (de) * 2015-10-01 2017-04-06 Kocher-Plastik Maschinenbau Gmbh Verfahren zur Reduzierung der mikrobiologischen Belastung von Behältererzeugnissen
DE102016002777A1 (de) * 2016-03-09 2017-09-14 Voxeljet Ag Verfahren und Vorrichtung zum Herstellen von 3D-Formteilen mit Baufeldwerkzeugen
WO2024089010A1 (de) * 2022-10-24 2024-05-02 Eos Gmbh Electro Optical Systems Verfahren und vorrichtung zur additiven herstellung von elektrochemischen einrichtungen

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Publication number Priority date Publication date Assignee Title
DE1145284B (de) * 1960-10-11 1963-03-14 Wacker Chemie Gmbh Verfahren zur Herstellung von Rohren aus hochreinen Stoffen
FR1427925A (fr) * 1964-12-29 1966-02-11 Electro Refractaire Procédé et appareil pour la fusion et la solidification continues des réfractaires électrofondus
FR1445684A (fr) * 1965-06-03 1966-07-15 Commissariat Energie Atomique Dispositif de coulée continue de matériaux réfractaires
US3724977A (en) * 1971-04-29 1973-04-03 Nat Standard Co Reducing and sintering furnace means
US3744946A (en) * 1971-10-15 1973-07-10 Nat Standard Co Apparatus for fabricating continuous elongated components
US4005956A (en) * 1973-04-11 1977-02-01 Inoue-Japax Research Incorporated Powder activation and integrated powder metallurgy system
US4012213A (en) * 1973-06-14 1977-03-15 Arthur D. Little, Inc. Apparatus for forming refractory fibers
US4116598A (en) * 1975-03-04 1978-09-26 Fizichesky Institut Imeni P.N. Lebedeva Akademii Nauk Sssr Apparatus for producing high-melting-metal-oxide-based crystalline materials
US4218410A (en) * 1975-06-28 1980-08-19 Leybold-Heraeus Gmbh & Co. Kg Method for the production of high-purity metal powder by means of electron beam heating
DE2528999C2 (de) * 1975-06-28 1984-08-23 Leybold-Heraeus GmbH, 5000 Köln Verfahren und Vorrichtung zur Herstellung von hochreinem Metallpulver mittels Elektronenstrahlbeheizung
DE2638270C2 (de) * 1976-08-25 1983-01-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung großflächiger, freitragender Platten aus Silicium
DE2745247C3 (de) * 1977-10-07 1980-03-13 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verfahren und Vorrichtung zur semikontinuierlichen Herstellung von Siliciumformkörpern
DE2821481C2 (de) * 1978-05-17 1985-12-05 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Vorrichtung zum Ziehen von hochreinen Halbleiterstäben aus der Schmelze
US4358416A (en) * 1980-12-04 1982-11-09 Olin Corporation Apparatus and process for cooling and solidifying molten material being electromagnetically cast
DE3049376A1 (de) * 1980-12-29 1982-07-29 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung vertikaler pn-uebergaenge beim ziehen von siliciumscheiben aus einer siliciumschmelze
DE3132776A1 (de) * 1981-08-19 1983-03-03 Heliotronic Gmbh Verfahren zur herstellung grob- bis einkristalliner folien aus halbleitermaterial
US4410471A (en) * 1981-11-23 1983-10-18 Motorola, Inc. Ribbon-to-ribbon conversion with shaped molten zone
JPS59129702A (ja) * 1983-01-13 1984-07-26 Tanaka Kikinzoku Kogyo Kk 貴金属含有合金の粉末製造法
US4572812A (en) * 1984-08-13 1986-02-25 The United States Of America As Represented By The Secretary Of Energy Method and apparatus for casting conductive and semiconductive materials

Also Published As

Publication number Publication date
EP0203518B1 (de) 1990-08-29
US4759887A (en) 1988-07-26
DE3673694D1 (de) 1990-10-04
EP0203518A3 (en) 1988-09-21
JPH027881B2 (xx) 1990-02-21
EP0203518A2 (de) 1986-12-03
AU584423B2 (en) 1989-05-25
AU5785486A (en) 1986-11-27
DE3518829A1 (de) 1986-11-27
JPS61270111A (ja) 1986-11-29

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