ZA69880B - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
ZA69880B
ZA69880B ZA690880*[A ZA69880A ZA69880B ZA 69880 B ZA69880 B ZA 69880B ZA 69880 A ZA69880 A ZA 69880A ZA 69880 B ZA69880 B ZA 69880B
Authority
ZA
South Africa
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
ZA690880*[A
Other languages
English (en)
Inventor
R Gelsing
K Van Steensen
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of ZA69880B publication Critical patent/ZA69880B/xx

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
ZA690880*[A 1969-01-02 1969-12-22 Semiconductor device ZA69880B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6900054.A NL159822B (nl) 1969-01-02 1969-01-02 Halfgeleiderinrichting.

Publications (1)

Publication Number Publication Date
ZA69880B true ZA69880B (en) 1971-07-28

Family

ID=19805785

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA690880*[A ZA69880B (en) 1969-01-02 1969-12-22 Semiconductor device

Country Status (13)

Country Link
US (1) US3942187A (nl)
JP (1) JPS4813868B1 (nl)
AT (1) AT318003B (nl)
BE (1) BE743979A (nl)
BR (1) BR6915742D0 (nl)
CH (1) CH505465A (nl)
DE (1) DE1965546C3 (nl)
ES (1) ES375119A1 (nl)
FR (1) FR2027664B1 (nl)
GB (1) GB1290194A (nl)
NL (1) NL159822B (nl)
SE (1) SE354542B (nl)
ZA (1) ZA69880B (nl)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3654526A (en) * 1970-05-19 1972-04-04 Texas Instruments Inc Metallization system for semiconductors
NL7215200A (nl) * 1972-11-10 1974-05-14
JPS51147253A (en) * 1975-06-13 1976-12-17 Nec Corp Structure of electrode terminal
JPS5851425B2 (ja) * 1975-08-22 1983-11-16 株式会社日立製作所 ハンドウタイソウチ
JPS5247686A (en) * 1975-10-15 1977-04-15 Toshiba Corp Semiconductor device and process for production of same
US4112196A (en) * 1977-01-24 1978-09-05 National Micronetics, Inc. Beam lead arrangement for microelectronic devices
NL7704186A (nl) * 1977-04-18 1978-10-20 Philips Nv Werkwijze voor het galvanisch versterken van een geleidend basispatroon en inrichting ver- kregen met behulp van de werkwijze.
JPS5421165A (en) * 1977-07-18 1979-02-17 Nec Corp Semiconductor device
JPS55122821U (nl) * 1979-02-23 1980-09-01
JPS55163025U (nl) * 1979-05-09 1980-11-22
JPS55156365A (en) * 1979-05-24 1980-12-05 Toshiba Corp Semiconductor device
JPS55171321U (nl) * 1979-05-28 1980-12-09
US4394678A (en) * 1979-09-19 1983-07-19 Motorola, Inc. Elevated edge-protected bonding pedestals for semiconductor devices
US4316200A (en) * 1980-03-07 1982-02-16 International Business Machines Corporation Contact technique for electrical circuitry
JPS5925387B2 (ja) * 1980-06-10 1984-06-16 株式会社東芝 半導体装置
DE3141014A1 (de) * 1981-10-15 1983-04-28 Siemens AG, 1000 Berlin und 8000 München Integrierte schaltung
US4514751A (en) * 1982-12-23 1985-04-30 International Business Machines Corporation Compressively stresses titanium metallurgy for contacting passivated semiconductor devices
JPS59198734A (ja) * 1983-04-25 1984-11-10 Mitsubishi Electric Corp 多層配線構造
US4495222A (en) * 1983-11-07 1985-01-22 Motorola, Inc. Metallization means and method for high temperature applications
US4600658A (en) * 1983-11-07 1986-07-15 Motorola, Inc. Metallization means and method for high temperature applications
US4665424A (en) * 1984-03-30 1987-05-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US4571451A (en) * 1984-06-04 1986-02-18 International Business Machines Corporation Method for routing electrical connections and resulting product
JPH0611053B2 (ja) * 1984-12-20 1994-02-09 三菱電機株式会社 半導体装置の製造方法
US4953003A (en) * 1987-05-21 1990-08-28 Siemens Aktiengesellschaft Power semiconductor device
EP0307272A3 (en) * 1987-09-09 1989-07-12 STMicroelectronics, Inc. Aluminum alloy semiconductor interconnections having high purity titanium or niobium barrier layer
JPH0295531U (nl) * 1989-01-20 1990-07-30
JPH05206139A (ja) * 1991-11-19 1993-08-13 Nec Corp 基板接続電極およびその製造方法
US5249728A (en) * 1993-03-10 1993-10-05 Atmel Corporation Bumpless bonding process having multilayer metallization
US6388203B1 (en) 1995-04-04 2002-05-14 Unitive International Limited Controlled-shaped solder reservoirs for increasing the volume of solder bumps, and structures formed thereby
WO1996031905A1 (en) 1995-04-05 1996-10-10 Mcnc A solder bump structure for a microelectronic substrate
KR100327442B1 (ko) * 1995-07-14 2002-06-29 구본준, 론 위라하디락사 반도체소자의범프구조및형성방법
US5793116A (en) * 1996-05-29 1998-08-11 Mcnc Microelectronic packaging using arched solder columns
US5905308A (en) * 1996-11-25 1999-05-18 Texas Instruments Incorporated Bond pad for integrated circuit
ES2159406T3 (es) * 1997-01-16 2001-10-01 Ford Motor Co Metodo para impurificar hilo metalico de conexion.
US5990472A (en) * 1997-09-29 1999-11-23 Mcnc Microelectronic radiation detectors for detecting and emitting radiation signals
WO2002039802A2 (en) * 2000-11-10 2002-05-16 Unitive Electronics, Inc. Methods of positioning components using liquid prime movers and related structures
US6863209B2 (en) 2000-12-15 2005-03-08 Unitivie International Limited Low temperature methods of bonding components
US7531898B2 (en) * 2002-06-25 2009-05-12 Unitive International Limited Non-Circular via holes for bumping pads and related structures
US7547623B2 (en) * 2002-06-25 2009-06-16 Unitive International Limited Methods of forming lead free solder bumps
US6960828B2 (en) 2002-06-25 2005-11-01 Unitive International Limited Electronic structures including conductive shunt layers
WO2004038798A2 (en) 2002-10-22 2004-05-06 Unitive International Limited Stacked electronic structures including offset substrates
TWI225899B (en) * 2003-02-18 2005-01-01 Unitive Semiconductor Taiwan C Etching solution and method for manufacturing conductive bump using the etching solution to selectively remove barrier layer
US7049216B2 (en) * 2003-10-14 2006-05-23 Unitive International Limited Methods of providing solder structures for out plane connections
US7358174B2 (en) 2004-04-13 2008-04-15 Amkor Technology, Inc. Methods of forming solder bumps on exposed metal pads
US20060205170A1 (en) * 2005-03-09 2006-09-14 Rinne Glenn A Methods of forming self-healing metal-insulator-metal (MIM) structures and related devices
US7674701B2 (en) 2006-02-08 2010-03-09 Amkor Technology, Inc. Methods of forming metal layers using multi-layer lift-off patterns
US7932615B2 (en) * 2006-02-08 2011-04-26 Amkor Technology, Inc. Electronic devices including solder bumps on compliant dielectric layers
JP5119756B2 (ja) * 2006-06-30 2013-01-16 株式会社デンソー 配線基板
JP5855361B2 (ja) * 2011-05-31 2016-02-09 三菱電機株式会社 半導体装置
KR101774938B1 (ko) 2011-08-31 2017-09-06 삼성전자 주식회사 지지대를 갖는 반도체 패키지 및 그 형성 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1053069A (nl) * 1963-06-28
NL134170C (nl) * 1963-12-17 1900-01-01
GB1104804A (en) * 1964-04-28 1968-02-28 Texas Instruments Inc Improvements relating to semiconductor devices
BE670213A (nl) * 1964-09-30 1900-01-01
DE1614928A1 (de) * 1966-07-19 1970-12-23 Solitron Devices Verfahren zur Kontaktierung von Halbleiter-Bauelementen
US3436616A (en) * 1967-02-07 1969-04-01 Motorola Inc Ohmic contact consisting of a bilayer of gold and molybdenum over an alloyed region of aluminum-silicon
US3495324A (en) * 1967-11-13 1970-02-17 Sperry Rand Corp Ohmic contact for planar devices
US3518506A (en) * 1967-12-06 1970-06-30 Ibm Semiconductor device with contact metallurgy thereon,and method for making same
US3569796A (en) * 1968-05-10 1971-03-09 Solitron Devices Integrated circuit contact
US3480412A (en) * 1968-09-03 1969-11-25 Fairchild Camera Instr Co Method of fabrication of solder reflow interconnections for face down bonding of semiconductor devices

Also Published As

Publication number Publication date
NL159822B (nl) 1979-03-15
DE1965546B2 (de) 1979-08-30
US3942187A (en) 1976-03-02
GB1290194A (nl) 1972-09-20
SE354542B (nl) 1973-03-12
DE1965546A1 (de) 1970-08-27
AT318003B (de) 1974-09-25
FR2027664A1 (nl) 1970-10-02
DE1965546C3 (de) 1980-05-22
NL6900054A (nl) 1970-07-06
BR6915742D0 (pt) 1973-01-02
ES375119A1 (es) 1972-03-16
BE743979A (nl) 1970-06-30
FR2027664B1 (nl) 1975-01-10
CH505465A (de) 1971-03-31
JPS4813868B1 (nl) 1973-05-01

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