Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping

Definitions

• the present invention relates to a wafer mounting table.
• the wafer mounting table disclosed in Patent Document 1 includes a ceramic plate having a wafer mounting surface on its upper surface, a gas passageway through which gas can pass vertically through the ceramic plate, a conductive base plate bonded to the underside of the ceramic plate, and a gas supply passageway provided within the base plate.
• the gas passageway is composed of a porous plug disposed in a through-hole formed in the ceramic plate.
• a high-frequency voltage is applied between the base plate and an upper electrode provided above the wafer to generate plasma above the wafer, and the wafer is processed using this plasma.
• helium gas is introduced from the outside into the gas supply passageway.
• the helium gas is then supplied from the gas supply passageway through the gas passageway to the underside of the wafer, improving thermal conduction between the wafer and the ceramic plate. Because the helium gas passes through the pores of the porous plug, arc discharge on the underside of the wafer is suppressed compared to when the porous plug is not present. Without the porous plug, arcing would occur when electrons generated by ionization of helium accelerate and collide with other helium particles. However, with the porous plug, arcing is suppressed because the electrons strike the porous plug before colliding with other helium particles. Arcing on the underside of the wafer is undesirable because it alters the wafer, making it unusable as a device.
• the present invention was made to solve the above-mentioned problems, and its main objective is to provide a new structure that suppresses discharge within the gas passage.
• the wafer mounting table of the present invention comprises: a ceramic plate having a wafer mounting surface on its upper surface; a gas passage through which gas can pass in the vertical direction of the ceramic plate; a conductive base plate bonded to the lower surface of the ceramic plate and used as a plasma generating electrode; a gas supply passage provided inside the base plate and communicating with the gas passage; an electric field adjusting conductor extending vertically from the lower surface of the ceramic plate or a position lower than the lower surface to just before the wafer mounting surface in the vicinity of the gas passage, and electrically connected to the base plate; It is equipped with the following.
• the direction of the electric field (the direction perpendicular to the equipotential lines) during plasma generation can be adjusted to the horizontal direction or a direction close to it.
• the direction in which electrons generated by the ionization of gas molecules accelerate is horizontal or a direction close to it. Therefore, if the length of the gas passage in the horizontal direction or a direction close to it is short, the distance over which the electrons are accelerated will not increase even if the vertical length inside the gas passage is increased, and discharges are less likely to occur even if the accelerated electrons collide with other gas molecules. Therefore, discharges inside the gas passage can be suppressed even if the vertical length inside the gas passage is increased, compared to when there is no electric field adjustment conductor.
• the ceramic plate may have at least one electrode
• the gas passage may be provided so as to pass through an electrode through-hole provided in each of the at least one electrode so that each of the at least one electrode is not exposed to the inner surface of the gas passage
• the electric field adjustment conductor may be provided so as to be electrically insulated from each of the at least one electrode. In this way, the direction of the electric field generated by the electrodes in the ceramic plate can be made horizontal or close to horizontal.
• the ceramic plate may have a ceramic plate through-hole that passes through the ceramic plate in the vertical direction, the gas passage may be provided inside or around a plug placed in the ceramic plate through-hole, and the electric field adjustment conductor may be provided inside the plug. This may make it easier to form the gas passage or the electric field adjustment conductor compared to providing the gas passage or the electric field adjustment conductor directly in the ceramic plate itself.
• the gas passage and the electric field adjustment conductor may be provided in the ceramic plate. In this way, the gas passage and the electric field adjustment conductor can be fabricated when manufacturing the ceramic plate.
• the gas passage may be provided linearly in the vertical or diagonal direction. This allows the gas to flow more easily than when a spiral passage is used as the gas passage or when micropores inside a porous body are used, thereby increasing the gas flow rate.
• the electric field adjustment conductor may be a flexible conductive wire.
• the electric field adjustment conductor may be a highly rigid needle-shaped member, but considering misalignment during manufacturing and deformation during use, a flexible conductive wire is preferable.
• the lower part of the electric field adjustment conductor may be arranged so as to be in direct contact with the base plate, or may be electrically connected to the base plate by a conductive elastic body arranged between the base plate and the lower end of the electric field adjustment conductor, which maintains communication between the gas supply path and the gas passage, or may be electrically connected to the base plate via a conductive film arranged on the underside of the ceramic plate, which maintains communication between the gas supply path and the gas passage.
• FIG. 2 is a cross-sectional view taken along the line AA in FIG. 1;
• FIG. 3 is a partially enlarged view of FIG. 2 .
• FIG. 5A to 5C are diagrams showing the manufacturing process of the wafer mounting table 10. FIG. FIG. FIG. FIG. FIG. FIG. FIG. FIG.
• Figure 1 is a plan view of the wafer mounting table 10
• Figure 2 is a cross-sectional view taken along line A-A in Figure 1
• Figure 3 is an enlarged view of a portion of Figure 2.
• seal band 21a, small circular protrusion 21b, and reference surface 21c on the wafer mounting surface 21 have been omitted from Figures 2 and 3.
• the wafer mounting table 10 includes a ceramic plate 20, a gas passage 52, a base plate 30, a metal bonding layer 40, and an electric field adjustment conductor 60.
• the ceramic plate 20 is a circular ceramic plate (e.g., 300 mm in diameter, 5 mm in thickness) made of alumina sintered body, aluminum nitride sintered body, or the like.
• the upper surface of the ceramic plate 20 forms the wafer mounting surface 21.
• the ceramic plate 20 incorporates an electrostatic electrode 22 and a bias electrode 23.
• the electrostatic electrode 22 is located close to the wafer mounting surface 21 (e.g., 0.05 to 0.2 mm from the wafer mounting surface 21), while the bias electrode 23 is located far from the wafer mounting surface 21.
• the wafer mounting surface 21 of the ceramic plate 20 has a seal band 21a formed along its outer edge, and multiple small circular protrusions 21b formed all over its surface.
• the seal band 21a and the small circular protrusions 21b have the same height, e.g., several ⁇ m to several tens of ⁇ m.
• the electrostatic electrode 22 is, for example, a planar mesh electrode to which a DC voltage can be applied. When a DC voltage is applied to the electrostatic electrode 22, the wafer W is attracted and fixed to the wafer mounting surface 21 (specifically, the upper surface of the seal band 21a and the upper surfaces of the small circular protrusions 21b) by electrostatic attraction; when the application of the DC voltage is released, the wafer W is released from the wafer mounting surface 21.
• the portion of the wafer mounting surface 21 that is not provided with the seal band 21a or the small circular protrusions 21b is referred to as the reference surface 21c.
• the bias electrode 23 is, for example, a planar mesh electrode, and a high-frequency bias voltage is applied to attract ions to the wafer W.
• the bias electrode 23 is a type of plasma generating electrode (RF electrode).
• the gas passage 52 is a passage through which gas can pass in the vertical direction of the ceramic plate 20.
• the gas passage 52 is provided inside the plug 50 fixed to the plug arrangement hole 24.
• the plug arrangement hole 24 penetrates the ceramic plate 20 in the vertical direction and is provided so as to communicate with the gas supply path 34 of the base plate 30.
• the plug arrangement hole 24 penetrates the electrostatic electrode 22 and bias electrode 23 in the vertical direction, but the electrostatic electrode 22 and bias electrode 23 are not exposed on the inner surface of the plug arrangement hole 24.
• the plug arrangement hole 24 is a tapered hole having an inverted truncated cone space in which the area of the upper opening is larger than the area of the lower opening.
• the plug arrangement hole 24 is provided at multiple locations on the ceramic plate 20 in a planar view (e.g., multiple locations equally spaced around the circumference).
• the plug 50 is a dense ceramic inverted truncated cone (e.g., made of the same material as the ceramic plate 20) placed in the plug arrangement hole 24.
• the plug 50 is provided with a gas passage 52 that extends linearly from the bottom surface to the top surface of the plug 50 in the vertical direction.
• the vertical length L of the gas passage 52 is the same as the thickness of the ceramic plate 20.
• Multiple (e.g., six) gas passages 52 are provided circumferentially on the top surface of the plug 50 in a plan view.
• each gas passage 52 is preferably 0.5 mm or less, more preferably 0.2 mm or less, to suppress arc discharge.
• the equipotential lines EL are oriented vertically or diagonally rather than horizontally, as shown in FIG. 3 .
• Arc discharge occurs when electrons generated by ionization of a gas (e.g., helium gas) in the gas passage 52 accelerate in the direction of the electric field lines (a direction perpendicular to the equipotential lines EL, which is approximately horizontal in this embodiment) and collide with other helium.
• a gas e.g., helium gas
• Such arc discharge can be suppressed by setting the horizontal length (i.e., diameter) of the gas passage 52 to 0.5 mm or less (preferably 0.2 mm or less).
• the base plate 30 is a conductive circular plate (a circular plate with the same or larger diameter as the ceramic plate 20) with good thermal conductivity.
• a refrigerant e.g., an electrically insulating liquid such as a fluorine-based inert liquid
• a gas supply path 34 through which gas is supplied to the gas passage 52.
• the refrigerant flow path 32 is formed in a single line from inlet to outlet across the entire surface of the base plate 30 in a plan view.
• materials for the base plate 30 include metals and composite materials. Examples of metals include Mo. Examples of composite materials include composite materials of metal and ceramic.
• composite materials of metal and ceramic include metal matrix composites (MMCs) and ceramic matrix composites (CMCs).
• MMCs metal matrix composites
• CMCs ceramic matrix composites
• Specific examples of such composite materials include materials containing Si, SiC, and Ti, and materials in which porous SiC is impregnated with Al and/or Si.
• a material containing Si, SiC, and Ti is called SiSiCTi
• AlSiC a material in which porous SiC is impregnated with Al
• SiSiC a material in which porous SiC is impregnated with Si. It is preferable to select a material for the base plate 30 that has a thermal expansion coefficient close to that of the material for the ceramic plate 20.
• the base plate 30 is used as a source electrode (a type of plasma generating electrode (RF electrode)) to which a source high frequency is applied to generate plasma.
• a source electrode a type of plasma generating electrode (RF electrode)
• the bias high frequency is several hundred kHz
• the source high frequency is several tens to several hundred MHz.
• the gas supply path 34 includes a ring portion 34b that is concentric with the base plate 30 in a plan view, and an inlet portion 34a that introduces gas into the ring portion 34b from the underside of the base plate 30.
• the ring portion 34b is connected to the gas passages 52 via through holes 42 in the metal bonding layer 40. There may be, for example, only one inlet portion 34a.
• the gas introduced into the inlet portion 34a passes through the ring portion 34b and is distributed to each gas passage 52.
• the metal bonding layer 40 bonds the lower surface of the ceramic plate 20 to the upper surface of the base plate 30.
• the metal bonding layer 40 is formed, for example, by TCB (thermal compression bonding).
• TCB is a well-known method in which a metal bonding material is sandwiched between two components to be joined, and the two components are pressure-bonded while heated to a temperature below the solidus temperature of the metal bonding material.
• the metal bonding layer 40 may be a layer formed from solder or a metal brazing material.
• the metal bonding layer 40 has a through-hole 42. The through-hole 42 is located at a position that connects the gas passage 52 and the gas supply path 34.
• the electric field adjustment conductor 60 is a needle-shaped metal member located inside the plug 50 and extending vertically near the gas passage 52.
• the electrostatic electrode 22 has an electrostatic electrode through-hole 22a facing the plug 50, and the bias electrode 23 has a bias electrode through-hole 23a facing the plug 50.
• the electric field adjustment conductor 60 is embedded in the ceramic plate 20 inside the electrostatic electrode through-hole 22a and inside the bias electrode through-hole 23a, while being electrically insulated from the electrostatic electrode 22 and bias electrode 23.
• the upper part of the electric field adjustment conductor 60 is inserted into a blind hole located on the underside of the plug 50, and the lower part of the electric field adjustment conductor 60 is in direct contact with the base plate 30.
• the lower part of the electric field adjustment conductor 60 may be inserted into a hole located in the base plate 30 and joined to the base plate 30 with solder or brazing material, or may be screwed into a hole located in the base plate 30.
• the upper end of the electric field adjustment conductor 60 reaches just short of the wafer mounting surface 21.
• the upper end of the electric field adjustment conductor 60 is positioned so as to maintain the withstand voltage between the electric field adjustment conductor 60 and the wafer W.
• the electric field adjustment conductor 60 is disposed so as to extend vertically near the gas passage 52 from below the underside of the ceramic plate 20 to just short of the wafer mounting surface 21, and is electrically connected to the base plate 30. Therefore, the electric field adjustment conductor 60 has the same potential as the base plate 30.
• the electric field adjustment conductor 60 is disposed 0.3 to 2.0 mm away from the gas passage 52.
• a wafer W is placed on the wafer mounting surface 21.
• the chamber is then depressurized using a vacuum pump to adjust the pressure to a predetermined level, and a DC voltage is applied to the electrostatic electrode 22 of the ceramic plate 20 to generate an electrostatic adsorption force, adsorbing and fixing the wafer W to the wafer mounting surface 21 (specifically, the upper surface of the seal band 21a or the upper surface of the small circular protrusions 21b).
• a reactive gas atmosphere of a predetermined pressure e.g., several tens to several hundreds of Pa
• a source high-frequency voltage is applied between an upper electrode (not shown) installed on the ceiling of the chamber and the base plate 30, and a bias high-frequency voltage is applied between the upper electrode and the bias electrode 23, generating plasma.
• the surface of the wafer W is then processed by the generated plasma.
• a coolant circulates through the coolant flow path 32 of the base plate 30.
• Backside gas is introduced into the gas supply path 34 from a gas cylinder (not shown).
• a thermally conductive gas e.g., helium
• the backside gas is supplied and sealed in the space between the back surface of the wafer W and the reference surface 21c of the wafer mounting surface 21 through the gas supply path 34, through-hole 42, and gas passage 52. The presence of this backside gas ensures efficient thermal conduction between the wafer W and the ceramic plate 20.
• the wafer mounting table 10 can adjust the direction of the electric field (the direction perpendicular to the equipotential lines EL) during plasma generation to the horizontal direction or a direction close to it.
• An example of the equipotential lines EL in this embodiment is shown in Figure 3.
• the direction in which electrons generated by the ionization of gas molecules accelerate is horizontal or a direction close to it. Therefore, if the length of the gas passage 52 in the horizontal direction or a direction close to it is short, even if the vertical length L within the gas passage 52 is increased, the distance over which the electrons are accelerated does not increase, and even if the accelerated electrons collide with other gas molecules, discharge is unlikely to occur.
• FIG. 5 is a manufacturing process diagram for the wafer mounting table 10.
• the ceramic plate 20 incorporates an electrostatic electrode 22 and a bias electrode 23, and is provided with a plug placement hole 24.
• the base plate 30 is provided with a coolant flow path 32 and a gas supply path 34.
• the top of the ring portion 34b is open.
• a hole is provided at a predetermined position in the ring portion 34b for inserting the lower part of the electric field adjustment conductor 60.
• the metal bonding material 90 is provided with a through-hole 92 at a position opposite the plug placement hole 24.
• a metal bonding material 90 is sandwiched between the underside of the ceramic plate 20 and the top side of the base plate 30 to form a laminate.
• the laminate is then pressed and bonded at a temperature below the solidus temperature of the metal bonding material 90 (for example, a temperature 20°C below the solidus temperature but below the solidus temperature), and then returned to room temperature (TCB).
• TCB room temperature
• the metal bonding material 90 and through-hole 92 become the metal bonding layer 40 and through-hole 42, respectively.
• the upper part of the ring portion 34b is covered with the metal bonding layer 40 except for the portion facing the through-hole 42.
• the metal bonding material 90 can be an Al-Mg-based bonding material or an Al-Si-Mg-based bonding material. It is preferable to use a metal bonding material 90 with a thickness of approximately 100 ⁇ m.
• an electric field adjustment conductor 60 and a truncated cone-shaped plug 50 are prepared (Figure 5B).
• the plug 50 has multiple gas passages 52 and a blind hole 54 on its underside.
• This blind hole 54 is a hole for inserting the upper part of the electric field adjustment conductor 60 and is located at the center of the circle in which the multiple gas passages 52 are arranged in a plan view.
• the electric field adjustment conductor 60 is inserted into the hole in the ring portion 34b and fixed by brazing or the like.
• the plug 50 is inserted into the plug placement hole 24 and fixed with an adhesive. At this time, the electric field adjustment conductor 60 is positioned so that it is inserted into the blind hole 54 of the plug 50.
• the top surface of the ceramic plate 20 is then processed (forming the seal band 21a and small circular protrusions 21b) to obtain the wafer mounting table 10 ( Figure 5C).
• the wafer mounting table 10 described above is provided with an electric field adjustment conductor 60, which allows the direction of the electric field (the direction perpendicular to the equipotential lines EL) during plasma generation to be adjusted to the horizontal direction or a direction close to it.
• the direction in which electrons generated by ionization of gas molecules accelerate is horizontal or a direction close to it. Therefore, if the length of the gas passage 52 in the horizontal direction or a direction close to it is short, the distance over which the electrons are accelerated will not be long even if the vertical length L within the gas passage 52 is increased, and discharge is less likely to occur even if the accelerated electrons collide with other gas molecules. Therefore, discharge within the gas passage 52 can be suppressed even if the vertical length L within the gas passage 52 is increased, compared to when the electric field adjustment conductor 60 is not provided.
• the ceramic plate 20 also has an electrostatic electrode 22 and a bias electrode 23.
• the gas passage 52 passes through an electrostatic electrode through-hole 22a so that the electrostatic electrode 22 is not exposed to the inner surface of the gas passage 52, and the bias electrode 23 passes through a bias electrode through-hole 23a so that the bias electrode 23 is not exposed to the inner surface of the gas passage 52.
• the electric field adjustment conductor 60 is provided in a state where it is electrically insulated from each of the electrostatic electrode 22 and the bias electrode 23. Therefore, the direction of the electric field generated by the electrostatic electrode 22 and bias electrode 23 inside the ceramic plate 20 can also be horizontal or close to horizontal.
• the ceramic plate 20 has a plug placement hole 24 (ceramic plate through-hole) that passes through the ceramic plate 20 in the vertical direction.
• the gas passage 52 and the electric field adjustment conductor 60 are provided inside the plug 50 that is placed in the plug placement hole 24. Therefore, it may be easier to form the gas passage 52 and the electric field adjustment conductor 60 compared to when the gas passage 52 and the electric field adjustment conductor 60 are provided directly in the ceramic plate 20 itself.
• the gas passages 52 are arranged linearly in the vertical direction. This allows the gas to flow more easily and the gas flow rate to be increased compared to when spiral passages are used as gas passages or when micropores inside a porous body are used. As a result, the number of gas passages 52 can be reduced, thereby reducing manufacturing costs. Also, the gas passages 52 become temperature singularities for the wafer W, but reducing the number of gas passages 52 reduces the temperature singularities and improves thermal uniformity.
• the gas passage 52 extending linearly in the vertical direction is provided inside the plug 50.
• the gas passage 52 may be replaced with a gas passage 152 shown in FIG. 6.
• the gas passage 152 extends linearly in a diagonal direction around the periphery of the plug 50.
• the gas passage 152 is formed by a groove provided on the outer peripheral surface of the plug 50 and the inner peripheral surface of the plug placement hole 24.
• multiple gas passages 152 are provided at approximately equal intervals along the outer periphery of the plug 50 (a circle centered on the field adjustment conductor 60) in a plan view.
• the vertical length L (FIG. 3) of the gas passage 52 inside is the same as the thickness of the ceramic plate 20, but the vertical length L (FIG. 6) of the gas passage 152 inside is shorter than the thickness of the ceramic plate 20.
• the gas passage 152 may be provided inside the plug 50 rather than around the periphery.
• the gas passage 152 may be formed by a longitudinal groove provided on the outer peripheral surface of the plug 50 and the inner peripheral surface of the plug placement hole 24.
• the plug 50 placed in the plug placement hole 24 of the ceramic plate 20 is provided with a gas passage 52 and an electric field adjustment conductor 60.
• a gas passage 252 and an electric field adjustment conductor 260 shown in FIG. 8 may be employed.
• the gas passage 252 is provided in the ceramic plate 20 and extends linearly in the vertical direction.
• the gas passage 252 communicates with the gas supply path 34 and the through hole 42.
• multiple gas passages 252 are provided at approximately equal intervals along a circle centered on the electric field adjustment conductor 260 in a plan view.
• the upper part of the electric field adjustment conductor 260 is inserted into a blind hole provided on the underside of the ceramic plate 20, and the lower part of the electric field adjustment conductor 260 is in direct contact with the base plate 30.
• This configuration also achieves the same effects as the above-described embodiment.
• the gas passage 252 and the electric field adjustment conductor 260 can be fabricated when manufacturing the ceramic plate 20.
• the gas passages 252 may also be arranged linearly in an oblique direction within the ceramic plate 20.
• the electric field adjustment conductor 60 erected on the base plate 30 is inserted into the blind hole 54 of the plug 50.
• the structure shown in FIG. 10 may be adopted instead.
• the same components as those in the embodiment described above are denoted by the same reference numerals.
• the electric field adjustment conductor 360 is a via provided in the plug 50.
• a conductive paste which is a precursor of the electric field adjustment conductor 360
• a ceramic compact which is a precursor of the plug 50, so that the electric field adjustment conductor 360 is formed simultaneously when the ceramic compact is fired to obtain the plug 50.
• a metal spring 370 is disposed in a compressed state between the lower end of the electric field adjustment conductor 360 and the bottom surface of the gas supply path 34 (ring portion 34b) of the base plate 30.
• the electric field adjustment conductor 360 is electrically connected to the base plate 30 via the metal spring 370.
• the metal spring 370 maintains communication between the gas supply path 34 and the gas passage 52. This configuration also achieves the same effects as the embodiment described above. While a metal spring 370 is shown in Figure 10, any conductive elastic material that allows gas to pass through in the vertical direction is not limited to the metal spring 370.
• a metal mesh or a mass of metal fiber that can expand and contract in the vertical direction may also be used. This type of structure is particularly useful when a resin adhesive layer is used instead of the metal bonding layer 40.
• the electric field adjustment conductor 360 and metal spring 370 in Figure 10 may be used instead of the electric field adjustment conductors 60 and 260 in Figures 6 and 8.
• a conductive film 372 may be provided, as shown in FIG. 11, which covers the underside of the plug 50 and also covers a portion of the underside of the ceramic plate 20 (around the plug placement hole 24).
• the conductive film 372 is formed, for example, by sputtering.
• a through-hole 372a is provided in the conductive film 372 at a position facing the gas passage 52. Therefore, the conductive film 372 maintains communication between the gas supply path 34 and the gas passage 52.
• the electric field adjustment conductor 360 is electrically connected to the base plate 30 via the conductive film 372 and the metal bonding layer 40. This configuration also achieves the same effects as the above-described embodiment.
• the electric field adjustment conductor 360 and conductive film 372 in FIG. 11 may be used instead of the electric field adjustment conductors 60 and 260 in FIGS. 6 and 8.
• the electrostatic electrode 22 and the bias electrode 23 are embedded in the ceramic plate 20.
• at least one of the electrostatic electrode 22, the bias electrode 23, and the heater electrode capable of heating the wafer W may be embedded in the ceramic plate 20.
• these electrodes may not be embedded in the ceramic plate 20.
• Figure 12 shows an example of a structure in which electrodes are not embedded in the ceramic plate 20.
• the same components as in the above-described embodiment are assigned the same reference numerals.
• Figure 12 also shows the equipotential lines EL.
• the provision of the electric field adjustment conductor 60 makes it possible to adjust the direction of the electric field during plasma generation (the direction perpendicular to the equipotential lines EL) to a direction close to horizontal.
• a flexible conductive wire may be used as the electric field adjustment conductor 60. This makes it possible to absorb misalignment during manufacturing and deformation during use, compared to when a highly rigid needle-shaped member is used as the electric field adjustment conductor 60. This also applies to the electric field adjustment conductor 260 in Figure 8 and the electric field adjustment conductor 360 in Figures 10 and 11.
• the plug 50 is provided with multiple gas passages 52 that extend linearly in the vertical direction, but instead of multiple gas passages 52, a single spiral passage may be used, or a porous body may be used as the plug 50 and the micropores inside the porous body may be used as gas passages. In these cases, discharge within the gas passages may be more easily suppressed, but gas may flow more slowly than in the above-described embodiment.
• the ceramic plate 20 and the base plate 30 are joined by a metal joining layer 40, but a resin adhesive layer may be used instead of the metal joining layer 40.
• the gas supply path 34 includes an inlet portion 34a and a ring portion 34b, but is not limited to this.
• the gas supply path may be a base plate through-hole that passes through the base plate 30 in the vertical direction and communicates with the gas passage 52.
• the internal space of the plug placement hole 24 is an inverted truncated cone space, but it may also be a cylindrical space. In this case, the plug 50 is also cylindrical.
• the present invention can be used for wafer mounting stages used in semiconductor manufacturing equipment, such as ceramic heaters, electrostatic chuck heaters, and electrostatic chucks.

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