WO2025213503A1 - 显示面板及显示装置 - Google Patents

显示面板及显示装置

Info

Publication number
WO2025213503A1
WO2025213503A1 PCT/CN2024/089117 CN2024089117W WO2025213503A1 WO 2025213503 A1 WO2025213503 A1 WO 2025213503A1 CN 2024089117 W CN2024089117 W CN 2024089117W WO 2025213503 A1 WO2025213503 A1 WO 2025213503A1
Authority
WO
WIPO (PCT)
Prior art keywords
sublayer
layer
insulating layer
light
display panel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/CN2024/089117
Other languages
English (en)
French (fr)
Inventor
倪晶
蒯超超
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Publication of WO2025213503A1 publication Critical patent/WO2025213503A1/zh
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40OLEDs integrated with touch screens
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412Digitisers structurally integrated in a display
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays

Definitions

  • the present application relates to the field of display technology, and in particular to a display panel and a display device.
  • OLED Organic light-emitting diode
  • PI polyimide
  • TFTs Thin-film transistors
  • a hybrid inorganic and organic encapsulation layer provides water and oxygen protection, and a touchscreen film overlays the encapsulation layer to enable touch functionality.
  • patterned touch electrodes and traces are often obtained by etching the metal layer.
  • etching residues are easily generated in the metal layer during the etching process, resulting in stress concentration between adjacent film layers, causing cracks in the adjacent film layers.
  • Embodiments of the present application provide a display panel and a display device, which reduce etching residues in a touch function layer, reduce stress concentration, and improve the yield rate of the display panel.
  • An embodiment of the present application provides a display panel, comprising:
  • a touch function layer is provided on one side of the display function layer and includes: a first insulating layer, a first conductive layer, a second insulating layer, and a second conductive layer stacked in sequence;
  • the first conductive layer includes: a first sublayer and a second sublayer arranged in a stacked manner, the second sublayer is in direct contact with the surface of the first insulating layer on a side away from the display function layer, the first sublayer is arranged on a side of the second sublayer away from the first insulating layer, and the etching rate of the material of the second sublayer is greater than the etching rate of the material of the first sublayer.
  • an embodiment of the present application further provides a display panel, the display panel comprising a plurality of light-emitting areas and non-light-emitting areas adjacent to the light-emitting areas, the display panel further comprising:
  • the display function layer includes a light-emitting portion arranged corresponding to the light-emitting area
  • a touch function layer is provided on one side of the display function layer, wherein the touch function layer includes a first insulating layer, a first conductive layer, a second insulating layer, and a second conductive layer stacked in sequence;
  • the touch function layer also includes a focusing structure arranged corresponding to the light-emitting area, and the focusing structure includes the first insulating layer and the second insulating layer located in the light-emitting area and stacked, the first conductive layer includes a first sublayer and a second sublayer stacked, the second sublayer is in direct contact with the surface of the first insulating layer on the side away from the display function layer, the first sublayer is arranged on the side of the second sublayer away from the first insulating layer, and the etching rate of the material of the second sublayer is greater than the etching rate of the material of the first sublayer.
  • an embodiment of the present application further provides a display device, wherein the display device includes a display panel, and the display panel includes:
  • a touch function layer is provided on one side of the display function layer and includes: a first insulating layer, a first conductive layer, a second insulating layer, and a second conductive layer stacked in sequence;
  • the first conductive layer includes: a first sublayer and a second sublayer stacked together, the second sublayer being in direct contact with a surface of the first insulating layer away from the display function layer, the first sublayer being arranged on a side of the second sublayer away from the first insulating layer, and the etching rate of the material of the second sublayer being greater than the etching rate of the material of the first sublayer;
  • the display panel includes a plurality of light-emitting areas and non-light-emitting areas adjacent to the light-emitting areas, and the display panel further includes:
  • the display function layer includes a light-emitting portion arranged corresponding to the light-emitting area
  • a touch function layer is provided on one side of the display function layer, wherein the touch function layer includes a first insulating layer, a first conductive layer, a second insulating layer, and a second conductive layer stacked in sequence;
  • the touch function layer also includes a focusing structure arranged corresponding to the light-emitting area, and the focusing structure includes the first insulating layer and the second insulating layer located in the light-emitting area and stacked, the first conductive layer includes a first sublayer and a second sublayer stacked, the second sublayer is in direct contact with the surface of the first insulating layer on the side away from the display function layer, the first sublayer is arranged on the side of the second sublayer away from the first insulating layer, and the etching rate of the material of the second sublayer is greater than the etching rate of the material of the first sublayer.
  • 1 to 3 are schematic diagrams of the etching process structure provided in the related art
  • FIG4 is a schematic structural diagram of a display panel provided in an embodiment of the present application.
  • 5 to 7 are schematic diagrams of the etching process of the touch function layer according to an embodiment of the present application.
  • FIG8 is another schematic structural diagram of a display panel provided in an embodiment of the present application.
  • FIG9 is another schematic structural diagram of a display panel provided in an embodiment of the present application.
  • FIG10 is another schematic structural diagram of a display panel provided in an embodiment of the present application.
  • a metal stack is often used as a touch layer in related art, such as a Ti/Al/Ti stack; wherein the display panel includes a substrate layer 1 and a touch layer disposed on the substrate layer 1, the touch layer including a first metal layer 2 disposed on the substrate layer 1, a second metal layer 3 disposed on a side of the first metal layer 2 away from the substrate layer 1, and a third metal layer 4 disposed on a side of the second metal layer 3 away from the first metal layer 2.
  • a patterned photoresist layer 5 is formed on a side of the third metal layer 4 away from the second metal layer 3, and then the touch layer is etched, for example, by dry etching.
  • the second metal layer 3 in the touch layer which is usually located in the middle of the stack, needs to have a smaller resistance to achieve effective signal transmission, and the first metal layer 2 and the third metal layer 4 located above and below protect the second metal layer 3 and are more difficult to etch than the second metal layer 3; therefore, after the touch layer is etched, it is easy to form etching residues 6 on the substrate layer 1, such as metal residues formed on the substrate layer 1; and then when the insulating layer 7 is formed on the touch layer, stress concentration is easy to occur at the etching residues 6, resulting in cracks in the insulating layer 7 and/or the substrate layer 1, thereby reducing the reliability of the display panel.
  • an embodiment of the present application provides a display panel including a display function layer 10 and a touch function layer 20 .
  • the touch function layer 20 is disposed on one side of the display function layer 10 and includes a first insulating layer 24 , a first conductive layer 21 , a second insulating layer 25 and a second conductive layer 22 stacked in sequence.
  • the first conductive layer 21 includes a first sublayer 211 and a second sublayer 212 that are stacked, the second sublayer 212 is in direct contact with the surface of the first insulating layer 24 on the side away from the display function layer 10, the first sublayer 211 is arranged on the side of the second sublayer 212 away from the first insulating layer 24, and the etching rate of the material of the second sublayer 212 is greater than the etching rate of the material of the first sublayer 211.
  • the embodiment of the present application prepares the second sublayer 212 located on the surface of the first insulating layer 24 in the first conductive layer 21 using a material with a higher etching rate to reduce the etching residue of the first conductive layer 21, reduce the stress concentration phenomenon between the film layers adjacent to the first conductive layer 21, reduce the probability of cracking of the film layers adjacent to the first conductive layer 21, and improve the yield rate of the display panel.
  • the second conductive layer includes: a third sublayer and a fourth sublayer stacked together, and the third sublayer is located between the second insulating layer and the fourth sublayer, and the etching rate of the material of the third sublayer is greater than the etching rate of the material of the fourth sublayer.
  • the third sub-layer is in direct contact with a surface of the second insulating layer that is away from the display function layer.
  • the second conductive layer also includes a fifth sublayer arranged between the third sublayer and the second insulating layer, the etching rate of the material of the fifth sublayer is lower than the etching rate of the material of the third sublayer, and the fifth sublayer is in direct contact with the surface of the second insulating layer on one side away from the display function layer.
  • the first insulating layer includes a first surface away from the display function layer
  • the second insulating layer includes a second surface away from the display function layer
  • the roughness of the first surface is less than the roughness of the second surface
  • the thickness of the second sub-layer is less than or equal to the thickness of the third sub-layer.
  • the display panel includes a plurality of light-emitting areas and non-light-emitting areas adjacent to the light-emitting areas;
  • the display function layer includes a light-emitting portion arranged corresponding to the light-emitting area
  • the touch function layer further includes a light-collecting structure arranged corresponding to the light-emitting area;
  • a groove surrounding the light-emitting area is formed in the touch function layer, and the groove at least passes through the first insulating layer and the second insulating layer.
  • the first insulating layer and the second insulating layer stacked in the light-emitting area constitute the light-concentrating structure.
  • the touch function layer further includes an organic layer, which covers the side of the second insulating layer away from the first insulating layer and fills the groove, and the refractive index of the organic layer is smaller than the refractive index of the first insulating layer and the refractive index of the second insulating layer.
  • the first insulating layer includes a first surface away from the display function layer, and the roughness of the first surface is smaller than the roughness of the inner wall of the groove.
  • the display panel provided in the embodiment of the present application includes a substrate 30, a display function layer 10 arranged on the substrate 30, and a touch function layer 20 arranged on the side of the display function layer 10 away from the substrate 30.
  • the display function layer 10 includes a thin film transistor array layer arranged on the substrate 30 and a light-emitting device layer arranged on the side of the thin film transistor array layer away from the substrate 30, wherein a thin film transistor serving as a signal switch is provided in the thin film transistor array layer, and the light-emitting device layer includes a plurality of light-emitting portions 11, and the light-emitting portions 11 are electrically connected to the thin film transistors to realize signal transmission and light emission of the light-emitting portions 11; and the light-emitting portions 11 may include a stacked anode, an organic light-emitting layer and a cathode.
  • the display function layer 10 may further include an encapsulation layer covering the light-emitting device layer to provide water vapor barrier and stress buffering functions for the light-emitting device layer.
  • the touch function layer 20 includes a first insulating layer 24, a second insulating layer 25 and an organic layer 26 that are stacked, and the first insulating layer 24 is located on the side of the display function layer 10 away from the substrate 30, the second insulating layer 25 is located on the side of the first insulating layer 24 away from the display function layer 10, and the organic layer 26 is located on the side of the second insulating layer 25 away from the first insulating layer 24.
  • the materials of the first insulating layer 24 and the second insulating layer 25 may include inorganic insulating materials, such as silicon oxide or silicon nitride materials, and the material of the organic layer 26 may include organic resin materials.
  • the touch function layer 20 also includes a touch device coated in the first insulating layer 24, the second insulating layer 25 and the organic layer 26; specifically, the touch function layer 20 includes a first conductive layer 21 and a second conductive layer 22; it should be noted that the first conductive layer 21 can be one of the bridging trace and the touch electrode, and the second conductive layer 22 can be the other of the bridging trace and the touch electrode, and the first conductive layer 21 is connected to the second conductive layer 22.
  • the first conductive layer 21 is located between the second conductive layer 22 and the display function layer 10, the first conductive layer 21 is arranged on the side of the first insulating layer 24 away from the display function layer 10, the second insulating layer 25 covers the first conductive layer 21, the second conductive layer 22 is arranged on the side of the second insulating layer 25 away from the first insulating layer 24, and the organic layer 26 covers the second conductive layer 22.
  • the first conductive layer 21 is disposed on a first surface 240 of the first insulating layer 24 away from the display function layer 10
  • the second conductive layer 22 is disposed on a second surface 250 of the second insulating layer 25 away from the first insulating layer 24
  • the organic layer 26 covers the second conductive layer 22 .
  • the second conductive layer 22 may also be located between the first conductive layer 21 and the display function layer 10 , and the embodiment of the present application is described by taking the first conductive layer 21 being located between the second conductive layer 22 and the display function layer 10 as an example.
  • the first conductive layer 21 includes a first sublayer 211 and a second sublayer 212 that are stacked, the second sublayer 212 is located between the first sublayer 211 and the first insulating layer 24, and the second sublayer 212 is located on the first surface 240, that is, the second sublayer 212 is in direct contact with the side surface of the first insulating layer 24 away from the display function layer 10.
  • the etching rate of the material of the second sub-layer 212 is greater than the etching rate of the material of the first sub-layer 211, which can effectively reduce the etching residue of the second sub-layer 212, avoid the formation of etching residues on the first surface 240 of the first insulating layer 24, and thus reduce the probability of the first insulating layer 24 and/or the second insulating layer 25 being broken due to stress concentration.
  • the material of the first sub-layer 211 may include metal titanium, and the material of the second sub-layer 212 may include metal aluminum or silver.
  • the second conductive layer 22 includes a third sublayer 221, a fourth sublayer 222 and a fifth sublayer 223 which are stacked, and the third sublayer 221 is located between the fourth sublayer 222 and the fifth sublayer 223, the fifth sublayer 223 is located between the third sublayer 221 and the second insulating layer 25, and the fourth sublayer 222 is located on the side of the third sublayer 221 away from the fifth sublayer 223; wherein, the fifth sublayer 223 is located on the second surface 250 of the second insulating layer 25, that is, the fifth sublayer 223 is in direct contact with the surface of the second insulating layer 25 away from the display function layer 10; and the etching rate of the third sublayer 221 is greater than the etching rate of the fourth sublayer 222, and the etching rate of the third sublayer 221 is greater than the etching rate of the fifth sublayer 223.
  • the material of the third sublayer 221 may include metal aluminum or silver, and the materials of the fourth sublayer 222 and the fifth sublayer 223 may include metal titanium.
  • the material of the third sublayer 221 may include metal aluminum or silver
  • the materials of the fourth sublayer 222 and the fifth sublayer 223 may include metal titanium.
  • the first conductive layer 21 is a bridging trace
  • the second conductive layer 22 is a touch electrode
  • the thickness of the second sublayer 212 is less than or equal to the thickness of the third sublayer 221; preferably, the thickness of the second sublayer 212 is less than the thickness of the third sublayer 221.
  • the thickness of the metal layer required to form the second sublayer 212 can be reduced, the etching difficulty can be reduced, and the etching residue phenomenon can be further improved.
  • the third sublayer 221 belongs to the second conductive layer 22. Increasing the thickness of the third sublayer 221 can ensure that the resistance of the second conductive layer 22 is small, thereby improving the touch precision and accuracy.
  • the material of the first sublayer 211 may include a metal element, or a metal element and a metal oxide corresponding to the metal element, such as metal titanium and titanium oxide
  • the material of the second sublayer 212 may include a metal element, or a metal element and a metal oxide corresponding to the metal element, such as metal aluminum and aluminum oxide
  • the materials of the third sublayer 221, the fourth sublayer 222 and the fifth sublayer 223 may each include a metal element, or a metal element and a metal oxide corresponding to the metal element.
  • the second conductive layer 22 may include a mutual capacitance touch electrode or a self-capacitive touch electrode.
  • the first conductive layer 21 is connected between two sensing electrodes or transmitting electrodes spaced apart.
  • the second conductive layer 22 is a self-capacitive touch electrode, the first conductive layer 21 is connected to each electrode. Since both the second conductive layer 22 and the first conductive layer 21 are formed by etching a whole layer of metal material, the area of the second conductive layer 22 is larger, so less metal material is removed by etching, while the area of the first conductive layer 21 is larger.
  • the first conductive layer 21 has a larger etching load during the etching process, and is more likely to produce etching residues. Therefore, please refer to Figures 4, 5, 6 and 7.
  • the film stack structure of the first conductive layer 21 is improved so that the second sublayer 212 of the first conductive layer 21 located on the first surface 240 of the lower first insulating layer 24 is prepared by a material with a higher etching rate, so as to reduce the probability of etching residues being generated in the formation process of the first conductive layer 21, reduce the probability of stress concentration between the first insulating layer 24 and the second insulating layer 25, and improve the stability and yield of the display panel.
  • the touch function layer 20 also includes a transfer line 23, and the transfer line 23 passes through the second insulating layer 25, one end of the transfer line 23 is connected to the second conductive layer 22, and the other end of the transfer line 23 is connected to the first conductive layer 21, and the material of the transfer line 23 can be the same as that of the second conductive layer 22, or the same as that of the first conductive layer 21, or made of other conductive materials, which is not limited here.
  • the film stack structure of the first conductive layer 21 is improved in this embodiment, the etching residue phenomenon on the first surface 240 of the first insulating layer 24 can be reduced, and the roughness of the first surface 240 is smaller than the roughness of the second surface 250 of the second insulating layer 25.
  • the embodiment of the present application prepares the second sublayer 212 located on the first surface 240 of the first insulating layer 24 in the first conductive layer 21 using a material with a higher etching rate to reduce the etching residue of the first conductive layer 21, reduce the stress concentration phenomenon between the film layers adjacent to the first conductive layer 21, reduce the probability of cracking of the film layers adjacent to the first conductive layer 21, and improve the yield rate of the display panel.
  • the second conductive layer 22 includes a third sublayer 221 and a fourth sublayer 222 that are stacked, and the third sublayer 221 is located between the fourth sublayer 222 and the second insulating layer 25, and the third sublayer 221 is located on the second surface 250 of the second insulating layer 25, that is, the third sublayer 221 is in direct contact with the side surface of the second insulating layer 25 away from the display function layer 10.
  • the embodiment of the present application reduces the etching residues of the first conductive layer 21 and the second conductive layer 22 by preparing the second sublayer 212 located on the first surface 240 of the first insulating layer 24 in the first conductive layer 21 with a material having a higher etching rate, and prepares the third sublayer 221 located on the second surface 250 of the second insulating layer 25 in the second conductive layer 22 with a material having a higher etching rate, thereby reducing the stress concentration phenomenon between the film layers adjacent to the first conductive layer 21 and the second conductive layer 22, reducing the probability of cracking of the film layers adjacent to the first conductive layer 21 and the film layers adjacent to the second conductive layer 22, and improving the yield rate of the display panel.
  • the touch function layer 20 includes multiple light-emitting areas 101 and non-light-emitting areas 102 adjacent to the light-emitting areas 101, and multiple light-emitting parts 11 are arranged corresponding to the multiple light-emitting areas 101.
  • one light-emitting part 11 can be arranged corresponding to one light-emitting area 101.
  • the second conductive layer 22 and the first conductive layer 21 may be disposed in the non-luminescent region 102 to prevent the second conductive layer 22 and the first conductive layer 21 from affecting the luminescence of the luminescent region 101 .
  • the touch function layer 20 also includes a light-concentrating structure 27, and the light-concentrating structure 27 is located in the light-emitting area 101; specifically, a groove surrounding the light-emitting area 101 is opened in the touch function layer 20, and the groove at least passes through the first insulating layer 24 and the second insulating layer 25, and the first insulating layer 24 and the second insulating layer 25 located in the light-emitting area 101 and stacked constitute the light-concentrating structure 27.
  • the touch function layer 20 also includes an organic layer 26, which covers the side of the second insulating layer 25 away from the first insulating layer 24 and fills the groove.
  • the refractive index of the organic layer 26 is smaller than the refractive index of the first insulating layer 24 and the refractive index of the second insulating layer 25, thereby focusing the light-emitting portion 11 corresponding to the focusing structure 27 to improve the light extraction efficiency of the display panel.
  • the first conductive layer 21 includes a first sublayer 211 and a second sublayer 212 that are stacked, and the second sublayer 212 is located on the first surface 240 of the first insulating layer 24, and the first sublayer 211 is located on the side of the second sublayer 212 away from the first surface 240;
  • the second conductive layer 22 includes a third sublayer 221, a fourth sublayer 222 and a fifth sublayer 223 that are stacked, and the fifth sublayer 223 is located on the second surface 250 of the second insulating layer 25, the third sublayer 221 is located on the side of the fifth sublayer 223 away from the second insulating layer 25, and the fourth sublayer 222 is located on the side of the third sublayer 221 away from the fifth sublayer 223.
  • the etching rate of the material of the second sub-layer 212 is greater than the etching rate of the material of the first sub-layer 211
  • the etching rate of the material of the third sub-layer 221 is greater than the etching rate of the material of the fourth sub-layer 222
  • the etching rate of the material of the third sub-layer 221 is greater than the etching rate of the material of the fifth sub-layer 223; therefore, in this embodiment, the etching residue on the first surface 240 of the first insulating layer 24 can be reduced, and thus the roughness of the first surface 240 is less than the roughness of the second surface 250 of the second insulating layer 25.
  • the focusing structure 27 is formed by a stacked first insulating layer 24 and a second insulating layer 25, and the first surface 240 is located between the first insulating layer 24 and the second insulating layer 25. Since the embodiment of the present application can reduce the etching residue of the first surface 240 and reduce the roughness of the first surface 240, making the first surface 240 smoother, it can avoid the light emitted by the light-emitting portion 11 from being affected by the etching residue when passing through the focusing structure 27, thereby improving the light uniformity of the display panel.
  • one focusing structure 27 is provided corresponding to one light-emitting area 101, that is, one focusing structure 27 is provided corresponding to one light-emitting portion 11; the orthographic projection of the light-emitting portion 11 on the substrate 30 is located within the orthographic projection of the focusing structure 27 on the substrate 30, so as to achieve a better focusing effect on the light emitted by the light-emitting portion 11.
  • the width of the light-concentrating structure 27 close to the light-emitting portion 11 is greater than the width of the light-concentrating structure 27 away from the light-emitting portion 11 , and the light-concentrating structure 27 is narrow at the top and wide at the bottom.
  • the groove surrounding the light-concentrating structure 27 can be formed in the same photomask as the via through which the patch cord 23 passes, thereby saving process steps. Specifically, after forming the second insulating layer 25 to cover the first conductive layer 21, the second insulating layer 25 is patterned to form the groove and the via. Then, a metal stack is formed on the second surface 250 of the second insulating layer 25, and the metal stack passes through the via and connects to the first conductive layer 21, covering the second surface 250 and the inner wall of the groove. Next, the metal stack is etched to form the second conductive layer 22 located on the second surface 250 and the patch cord 23 passing through the via.
  • the stacking structure of the first conductive layer 21 is improved in this embodiment to reduce etching residue
  • the stacking structure of the second conductive layer 22 is not improved, the etching residue generated during the etching of the second conductive layer 22 is greater than the etching residue generated during the etching of the first conductive layer 21.
  • the roughness of the first surface 240 of the first insulating layer 24 is still less than the roughness of the inner wall of the groove.
  • the embodiment of the present application prepares the second sublayer 212 located on the first surface 240 of the first insulating layer 24 in the first conductive layer 21 using a material with a higher etching rate to reduce the etching residue of the first conductive layer 21, reduce the stress concentration phenomenon between the film layers adjacent to the first conductive layer 21, reduce the probability of cracking of the film layers adjacent to the first conductive layer 21, and improve the yield rate of the display panel; and in the embodiment of the present application, a focusing structure 27 is formed on the light-emitting side of the light-emitting portion 11, thereby improving the light-emitting efficiency of the display panel, and the focusing structure 27 is formed in the touch function layer 20, thereby improving the integration of the display panel, reducing the process steps of the display panel, and reducing the process cost; because the embodiment of the present application reduces the roughness of the first surface 240, it can improve the uniformity of the light emitted from the light-emitting portion 11 when passing through the focusing structure 27, thereby improving the
  • the second conductive layer 22 includes a third sublayer 221 and a fourth sublayer 222 that are stacked, and the third sublayer 221 is located between the fourth sublayer 222 and the second insulating layer 25, and the third sublayer 221 is located on the second surface 250 of the second insulating layer 25, that is, the third sublayer 221 is in direct contact with the side surface of the second insulating layer 25 away from the display function layer 10.
  • the second sublayer 212 located on the first surface 240 of the first insulating layer 24 in the first conductive layer 21 is prepared by using a material with a relatively high etching rate
  • the third sublayer 221 located on the second surface 250 of the second insulating layer 25 in the second conductive layer 22 is prepared by using a material with a relatively high etching rate, so as to reduce the etching residues of the first conductive layer 21 and the second conductive layer 22, reduce the stress concentration phenomenon between the film layers adjacent to the first conductive layer 21 and the second conductive layer 22, and reduce the stress concentration phenomenon between the film layers adjacent to the first conductive layer 21 and the second conductive layer 22.
  • a focusing structure 27 is formed on the light-emitting side of the light-emitting portion 11, thereby improving the light-emitting efficiency of the display panel, and the focusing structure 27 is formed in the touch function layer 20, thereby improving the integration of the display panel, reducing the process steps of the display panel, and reducing the process cost; because the embodiment of the present application reduces the roughness of the first surface 240, the uniformity of the light emitted from the light-emitting portion 11 when passing through the focusing structure 27 can be improved, thereby improving the light-emitting uniformity of the display panel.
  • An embodiment of the present application further provides a display panel.
  • the display panel includes a plurality of light-emitting areas 101 and non-light-emitting areas 102 adjacent to the light-emitting areas 101 .
  • the display panel also includes a display function layer 10 and a touch function layer 20; the display function layer 10 includes a light-emitting portion 11 arranged corresponding to the light-emitting area 101; the touch function layer 20 is arranged on one side of the display function layer 10, and the touch function layer 20 includes a first insulating layer 24, a first conductive layer 21, a second insulating layer 25 and a second conductive layer 22 stacked in sequence.
  • the touch function layer 20 also includes a focusing structure 27 arranged corresponding to the light-emitting area 101, and the focusing structure 27 includes a first insulating layer 24 and a second insulating layer 25 located in the light-emitting area 101 and stacked.
  • the first conductive layer 21 includes a first sublayer 211 and a second sublayer 212 stacked.
  • the second sublayer 212 is in direct contact with the surface of the second insulating layer 25 away from the display function layer 10.
  • the first sublayer 211 is arranged on the side of the second sublayer 212 away from the first insulating layer 24, and the etching rate of the material of the second sublayer 212 is greater than the etching rate of the material of the first sublayer 211.
  • the embodiment of the present application prepares the second sublayer 212 located on the first surface 240 of the first insulating layer 24 in the first conductive layer 21 using a material with a higher etching rate to reduce the etching residue of the first conductive layer 21, reduce the stress concentration phenomenon between the film layers adjacent to the first conductive layer 21, reduce the probability of cracking of the film layers adjacent to the first conductive layer 21, and improve the yield rate of the display panel; and in the embodiment of the present application, a focusing structure 27 is formed on the light-emitting side of the light-emitting portion 11, thereby improving the light-emitting efficiency of the display panel, and the focusing structure 27 is formed in the touch function layer 20, thereby improving the integration of the display panel, reducing the process steps of the display panel, and reducing the process cost; because the embodiment of the present application reduces the roughness of the first surface 240, the uniformity of the light emitted from the light-emitting portion 11 when passing through the focusing structure 27 can be improved,
  • the first conductive layer 21 includes a first sublayer 211 and a second sublayer 212 arranged in a stacked manner, and the second sublayer 212 is located on the first surface 240 of the first insulating layer 24, that is, the second sublayer 212 is in direct contact with the surface of the first insulating layer 24 away from the display function layer 10, and the first sublayer 211 is located on the side of the second sublayer 212 away from the first surface 240;
  • the second conductive layer 22 includes a third sublayer 221, a fourth sublayer 222 and a fifth sublayer 223 arranged in a stacked manner, and the fifth sublayer 223 is located on the second surface 250 of the second insulating layer 25, that is, the fifth sublayer 223 is in direct contact with the surface of the second insulating layer 25 away from the display function layer 10, the third sublayer 221 is located on the side of the fifth sublayer 223 away from the second insulating layer 25, and the fourth sublayer 222 is located on the side
  • the etching rate of the material of the second sub-layer 212 is greater than the etching rate of the material of the first sub-layer 211
  • the etching rate of the material of the third sub-layer 221 is greater than the etching rate of the material of the fourth sub-layer 222
  • the etching rate of the material of the third sub-layer 221 is greater than the etching rate of the material of the fifth sub-layer 223; therefore, in this embodiment, the etching residue on the first surface 240 of the first insulating layer 24 can be reduced, and thus the roughness of the first surface 240 is less than the roughness of the second surface 250 of the second insulating layer 25.
  • a groove surrounding the light-emitting area 101 is opened in the touch function layer 20 , and the groove at least passes through the first insulating layer 24 and the second insulating layer 25 .
  • the first insulating layer 24 and the second insulating layer 25 stacked in the light-emitting area 101 constitute a light-concentrating structure 27 .
  • the touch function layer 20 also includes an organic layer 26, which covers the side of the second insulating layer 25 away from the first insulating layer 24 and fills the groove.
  • the refractive index of the organic layer 26 is smaller than the refractive index of the first insulating layer 24 and the refractive index of the second insulating layer 25, thereby focusing the light-emitting portion 11 corresponding to the focusing structure 27 to improve the light extraction efficiency of the display panel.
  • the groove surrounding the light-concentrating structure 27 can be formed in the same photomask as the via through which the patch cord 23 passes, thereby saving process steps. Specifically, after forming the second insulating layer 25 to cover the first conductive layer 21, the second insulating layer 25 is patterned to form the groove and the via. Then, a metal stack is formed on the second surface 250 of the second insulating layer 25, and the metal stack passes through the via and connects to the first conductive layer 21, covering the second surface 250 and the inner wall of the groove. Next, the metal stack is etched to form the second conductive layer 22 located on the second surface 250 and the patch cord 23 passing through the via.
  • the stacking structure of the first conductive layer 21 is improved in this embodiment to reduce etching residue
  • the stacking structure of the second conductive layer 22 is not improved, the etching residue generated during the etching of the second conductive layer 22 is greater than the etching residue generated during the etching of the first conductive layer 21.
  • the roughness of the first surface 240 of the first insulating layer 24 is still less than the roughness of the inner wall of the groove.
  • the material of the first sublayer 211 may include metallic titanium
  • the material of the second sublayer 212 may include metallic aluminum or silver
  • the material of the third sublayer 221 may include metallic aluminum or silver
  • the materials of the fourth sublayer 222 and the fifth sublayer 223 may include metallic titanium.
  • the second conductive layer 22 includes a third sublayer 221 and a fourth sublayer 222 that are stacked, and the third sublayer 221 is located between the fourth sublayer 222 and the second insulating layer 25, and the third sublayer 221 is located on the second surface 250 of the second insulating layer 25, and the third sublayer 221 is in direct contact with the side surface of the second insulating layer 25 away from the display function layer 10.
  • the second sublayer 212 located on the first surface 240 of the first insulating layer 24 in the first conductive layer 21 is prepared by using a material with a relatively high etching rate
  • the third sublayer 221 located on the second surface 250 of the second insulating layer 25 in the second conductive layer 22 is prepared by using a material with a relatively high etching rate, so as to reduce the etching residues of the first conductive layer 21 and the second conductive layer 22, reduce the stress concentration phenomenon between the film layers adjacent to the first conductive layer 21 and the second conductive layer 22, and reduce the stress concentration phenomenon between the film layers adjacent to the first conductive layer 21 and the second conductive layer 22.
  • a focusing structure 27 is formed on the light-emitting side of the light-emitting portion 11, thereby improving the light-emitting efficiency of the display panel, and the focusing structure 27 is formed in the touch function layer 20, thereby improving the integration of the display panel, reducing the process steps of the display panel, and reducing the process cost; because the embodiment of the present application reduces the roughness of the first surface 240, the uniformity of the light emitted from the light-emitting portion 11 when passing through the focusing structure 27 can be improved, thereby improving the light-emitting uniformity of the display panel.
  • an embodiment of the present application further provides a display device, which includes the display panel as described in the above embodiment.
  • the display device since the display device has the same display panel as that in the above embodiment, the display device has the same beneficial effects as the display panel in the above embodiment, which will not be described in detail here.

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Abstract

本申请公开了一种显示面板及显示装置;其中,触控功能层包括依次层叠设置的第一绝缘层和第一导电层;其中,第一导电层包括层叠设置的第一子层和第二子层,第二子层与第一绝缘层远离显示功能层的一侧表面直接接触,第一子层设置在第二子层远离第一绝缘层的一侧,且第二子层的材料的蚀刻速率大于第一子层的材料的蚀刻速率。

Description

显示面板及显示装置 技术领域
本申请涉及显示技术领域,尤其涉及一种显示面板及显示装置。
背景技术
有机发光二极管(Organic Light-Emitting Diode,OLED)器件因其在固态照明和平板显示的方向拥有巨大的发展潜力而得到了学术界和产业界的极大关注。OLED器件可以做的更轻更薄,因而柔性显示技术将是未来的发展趋势。常用的基板衬底多为PI(聚酰亚胺)等柔性衬底,薄膜晶体管在柔性衬底上通过信号的控制,实现对OLED器件的发光调控,无机有机交叠的封装层进行包覆,以实现水氧防护,触控膜层在封装层上层进行覆盖,以实现触控功能。
目前,常通过对金属层进行蚀刻以得到图案化的触控电极和走线,但是,金属层在蚀刻过程中容易发生蚀刻残留,导致相邻膜层之间出现应力集中的现象,导致相邻膜层出现破裂。
发明概述
本申请实施例提供一种显示面板及显示装置,减小触控功能层中的蚀刻残留,减少应力集中的现象,提高显示面板的良品率。
本申请实施例提供一种显示面板,其包括:
显示功能层;
触控功能层,设置于所述显示功能层的一侧并包括:依次层叠设置的第一绝缘层、第一导电层、第二绝缘层以及第二导电层;
其中,所述第一导电层包括:层叠设置的第一子层和第二子层,所述第二子层与所述第一绝缘层远离所述显示功能层的一侧表面直接接触,第一子层设置在所述第二子层远离所述第一绝缘层的一侧,所述第二子层的材料的蚀刻速率大于所述第一子层的材料的蚀刻速率。
根据本申请的上述目的,本申请实施例还提供一种显示面板,所述显示面板包括多个发光区以及与所述发光区相邻的非发光区,所述显示面板还包括:
显示功能层,包括对应所述发光区内设置的发光部;
触控功能层,设置于所述显示功能层的一侧,所述触控功能层包括依次层叠设置的第一绝缘层、第一导电层、第二绝缘层以及第二导电层;
其中,所述触控功能层还包括对应所述发光区设置的聚光结构,所述聚光结构包括位于所述发光区内且层叠设置的所述第一绝缘层和所述第二绝缘层,所述第一导电层包括层叠设置的第一子层和第二子层,所述第二子层与所述第一绝缘层远离所述显示功能层的一侧表面直接接触,第一子层设置在所述第二子层远离所述第一绝缘层的一侧,且所述第二子层的材料的蚀刻速率大于所述第一子层的材料的蚀刻速率。
根据本申请的上述目的,本申请实施例还提供一种显示装置,所述显示装置包括显示面板,所述显示面板包括:
显示功能层;
触控功能层,设置于所述显示功能层的一侧并包括:依次层叠设置的第一绝缘层、第一导电层、第二绝缘层以及第二导电层;
其中,所述第一导电层包括:层叠设置的第一子层和第二子层,所述第二子层与所述第一绝缘层远离所述显示功能层的一侧表面直接接触,第一子层设置在所述第二子层远离所述第一绝缘层的一侧,所述第二子层的材料的蚀刻速率大于所述第一子层的材料的蚀刻速率;
或者,所述显示面板包括多个发光区以及与所述发光区相邻的非发光区,所述显示面板还包括:
显示功能层,包括对应所述发光区设置的发光部;
触控功能层,设置于所述显示功能层的一侧,所述触控功能层包括依次层叠设置的第一绝缘层、第一导电层、第二绝缘层以及第二导电层;
其中,所述触控功能层还包括对应所述发光区设置的聚光结构,所述聚光结构包括位于所述发光区内且层叠设置的所述第一绝缘层和所述第二绝缘层,所述第一导电层包括层叠设置的第一子层和第二子层,所述第二子层与所述第一绝缘层远离所述显示功能层的一侧表面直接接触,第一子层设置在所述第二子层远离所述第一绝缘层的一侧,且所述第二子层的材料的蚀刻速率大于所述第一子层的材料的蚀刻速率。
附图说明
下面结合附图,通过对本申请的具体实施方式详细描述,将使本申请的技术方案及其它有益效果显而易见。
图1至3为相关技术中提供的蚀刻过程结构示意图;
图4为本申请实施例提供的显示面板的一种结构示意图;
图5至图7为本申请实施例提供的触控功能层的蚀刻过程结构示意图;
图8为本申请实施例提供的显示面板的另一种结构示意图;
图9为本申请实施例提供的显示面板的另一种结构示意图;
图10为本申请实施例提供的显示面板的另一种结构示意图。
本发明的实施方式
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述。显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。
下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开,下文中对特定例子的部件和设置进行描述。当然,它们仅仅为示例,并且目的不在于限制本申请。此外,本申请可以在不同例子中重复参考数字和/或参考字母,这种重复是为了简化和清楚的目的,其本身不指示所讨论各种实施方式和/或设置之间的关系。此外,本申请提供了的各种特定的工艺和材料的例子,但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
请结合图1至图3,相关技术中常采用金属叠层作为触控层,例如Ti/Al/Ti叠层;其中,该显示面板包括衬底层1以及设置于衬底层1上的触控层,触控层包括设置于衬底层1上的第一金属层2、设置于第一金属层2远离衬底层1一侧的第二金属层3以及设置于第二金属层3远离第一金属层2一侧的第三金属层4,在对触控层进行蚀刻过程中,通过在第三金属层4远离第二金属层3的一侧形成图案化的光阻层5,再对触控层进行蚀刻,例如可以进行干法蚀刻,且由于触控层中通常位于叠层中间的第二金属层3需要具有较小的电阻,以实现信号的有效传输,而位于上下两层的第一金属层2和第三金属层4通过对第二金属层3起到保护作用,且相较于第二金属层3更难蚀刻;因此,触控层蚀刻完成之后,容易在衬底层1上形成蚀刻残留6,例如形成于衬底层1上的金属残留物;进而在触控层上形成绝缘层7时,容易在蚀刻残留6处产生应力集中的现象,导致绝缘层7和/或衬底层1发生破裂,进而降低了显示面板的可靠性。
请参照图4,本申请实施例提供一种显示面板,该显示面板包括显示功能层10以及触控功能层20。
其中,触控功能层20设置于显示功能层10的一侧并包括:依次层叠设置的第一绝缘层24、第一导电层21、第二绝缘层25以及第二导电层22。
进一步地,第一导电层21包括层叠设置的第一子层211和第二子层212,第二子层212与第一绝缘层24远离显示功能层10的一侧表面直接接触,第一子层211设置在第二子层212远离第一绝缘层24的一侧,且第二子层212的材料的蚀刻速率大于第一子层211的材料的蚀刻速率。
在实施应用过程中,本申请实施例通过将第一导电层21中位于第一绝缘层24的表面上的第二子层212采用蚀刻速率较大的材料进行制备,以减小第一导电层21的蚀刻残留,降低了与第一导电层21相邻膜层之间的应力集中现象,降低了与第一导电层21相邻的膜层发生破裂的概率,提高了显示面板的良品率。
在本申请的一种实施例中,所述第二导电层包括:层叠设置的第三子层和第四子层,且所述第三子层位于所述第二绝缘层和所述第四子层之间,所述第三子层的材料的蚀刻速率大于所述第四子层的材料的蚀刻速率。
在本申请的一种实施例中,所述第三子层与所述第二绝缘层远离所述显示功能层的一侧表面直接接触。
在本申请的一种实施例中,所述第二导电层还包括设置于所述第三子层和所述第二绝缘层之间的第五子层,所述第五子层的材料的蚀刻速率小于所述第三子层的材料的蚀刻速率,且所述第五子层与所述第二绝缘层远离所述显示功能层的一侧表面直接接触。
在本申请的一种实施例中,所述第一绝缘层包括远离所述显示功能层的第一表面,所述第二绝缘层包括远离所述显示功能层的第二表面,所述第一表面的粗糙度小于所述第二表面的粗糙度。
在本申请的一种实施例中,所述第二子层的厚度小于或等于所述第三子层的厚度。
在本申请的一种实施例中,所述显示面板包括多个发光区以及与所述发光区相邻的非发光区;
所述显示功能层包括对应所述发光区设置的发光部;
所述触控功能层还包括对应所述发光区设置的聚光结构;
其中,所述触控功能层中开设有围绕所述发光区的凹槽,所述凹槽至少贯穿所述第一绝缘层以及所述第二绝缘层,且位于所述发光区内且层叠的所述第一绝缘层和所述第二绝缘层构成所述聚光结构。
在本申请的一种实施例中,所述触控功能层还包括有机层,所述有机层覆盖于所述第二绝缘层远离所述第一绝缘层的一侧,并填充于所述凹槽内,且所述有机层的折射率小于所述第一绝缘层的折射率和所述第二绝缘层的折射率。
在本申请的一种实施例中,所述第一绝缘层包括远离所述显示功能层的第一表面,所述第一表面的粗糙度小于所述凹槽内壁的粗糙度。
具体地,请继续参照图4,在本申请的一种实施例中,本申请实施例提供的显示面板包括基板30、设置基板30上的显示功能层10、以及设置于显示功能层10远离基板30一侧的触控功能层20。
显示功能层10包括设置于基板30上的薄膜晶体管阵列层以及设置于薄膜晶体管阵列层远离基板30一侧的发光器件层,其中,薄膜晶体管阵列层中设置有作为信号开关的薄膜晶体管,发光器件层中包括多个发光部11,且发光部11与薄膜晶体管电性连接,以实现信号传输以及发光部11的发光;且发光部11可以包括层叠设置的阳极、有机发光层以及阴极。
需要说明的是,显示功能层10还可以包括覆盖发光器件层的封装层,以对发光器件层提供水汽阻挡以及应力缓冲等作用。
在一种实施例中,触控功能层20包括层叠设置的第一绝缘层24、第二绝缘层25以及有机层26,且第一绝缘层24位于显示功能层10远离基板30的一侧,第二绝缘层25位于第一绝缘层24远离显示功能层10的一侧,有机层26位于第二绝缘层25远离第一绝缘层24的一侧。
在一种实施例中,第一绝缘层24和第二绝缘层25的材料可以包括无机绝缘材料,例如氧化硅或者氮化硅材料,有机层26的材料可以包括有机树脂材料。
进一步地,触控功能层20还包括包覆于第一绝缘层24、第二绝缘层25以及有机层26中的触控器件;具体地,触控功能层20包括第一导电层21以及第二导电层22;需要说明的是,第一导电层21可以为桥接走线和触控电极中的一者,而第二导电层22可以为桥接走线和触控电极中的另一者,且第一导电层21与第二导电层22相连接。
在一种实施例中,第一导电层21位于第二导电层22和显示功能层10之间,第一导电层21设置于第一绝缘层24远离显示功能层10的一侧,第二绝缘层25覆盖第一导电层21,第二导电层22设置于第二绝缘层25远离第一绝缘层24的一侧,而有机层26覆盖第二导电层22。
其中,第一导电层21设置于第一绝缘层24远离显示功能层10一侧的第一表面240上,第二导电层22设置于第二绝缘层25远离第一绝缘层24一侧的第二表面250上,而有机层26覆盖第二导电层22。
在本申请的其他实施例中,第二导电层22也可以位于第一导电层21和显示功能层10之间,且本申请实施例中以第一导电层21位于第二导电层22和显示功能层10之间为例,进行说明。
在本申请实施例中,第一导电层21包括层叠设置的第一子层211和第二子层212,第二子层212位于第一子层211和第一绝缘层24之间,且第二子层212位于第一表面240上,即第二子层212与第一绝缘层24远离显示功能层10的一侧表面直接接触。
其中,第二子层212的材料的蚀刻速率大于第一子层211的材料的蚀刻速率,进而可以有效减小第二子层212的蚀刻残留,避免在第一绝缘层24的第一表面240上形成蚀刻残留物,进而降低了第一绝缘层24和/或第二绝缘层25由于应力集中而发生破裂的概率。
在一种实施例中,第一子层211的材料可以包括金属钛,第二子层212的材料可以包括金属铝或者银等。
进一步地,第二导电层22包括层叠设置的第三子层221、第四子层222以及第五子层223,且第三子层221位于第四子层222和第五子层223之间,第五子层223位于第三子层221和第二绝缘层25之间,第四子层222位于第三子层221远离第五子层223的一侧;其中,第五子层223位于第二绝缘层25的第二表面250上,即第五子层223与第二绝缘层25远离显示功能层10的一侧表面直接接触;且第三子层221的蚀刻速率大于第四子层222的蚀刻速率,第三子层221的蚀刻速率大于第五子层223的蚀刻速率。
在一种实施例中,第三子层221的材料可以包括金属铝或者银等,而第四子层222和第五子层223的材料可以包括金属钛,其中,本申请实施例中通过在第三子层221的上下两侧同时形成第四子层222和第五子层223,在保证信号传输效率的基础上,还可以对第三子层221提供有效的保护作用。
在一种实施例中,第一导电层21为桥接走线,第二导电层22为触控电极,第二子层212的厚度小于或等于第三子层221的厚度;优选的,第二子层212的厚度小于第三子层221的厚度,一方面,可以减少第二子层212需要形成的金属层的厚度,降低蚀刻难度,进一步改善蚀刻残留的现象,另一方面,第三子层221属于第二导电层22,增加第三子层221的厚度较大,可以保证第二导电层22的电阻较小,提高触控精度和准确度。
在本申请实施例中,由于第一导电层21中各子层、以及第二导电层22中各子层在制程中容易发生氧化反应并生成氧化物,因此,第一子层211的材料可以包括金属单质、或者金属单质以及该金属单质对应的金属氧化物,例如金属钛和氧化钛,第二子层212的材料可以包括金属单质、或者金属单质以及该金属单质对应的金属氧化物,例如金属铝和氧化铝;同理,第三子层221、第四子层222以及第五子层223各自的材料可以包括金属单质、或者金属单质以及该金属单质对应的金属氧化物。
需要说明的是,当第二导电层22为触控电极,且第一导电层21为桥接走线时,则第二导电层22可以包括互容式触控电极或者自容式触控电极,当第二导电层22为互容式触控电极时,则第一导电层21连接于间隔设置的两个感应电极或者发射电极之间,当第二导电层22为自容式触控电极时,则第一导电层21连接于各电极;其中,由于第二导电层22和第一导电层21均是采用整层金属材料进行蚀刻形成,但是,第二导电层22的面积较大,因此其蚀刻去除的金属材料较少,而第一导电层21的面积较小,因此其蚀刻去除的金属材料较多,则第一导电层21在蚀刻形成过程中具有较大的蚀刻负载,更容易产生蚀刻残留的现象,因此,请结合图4、图5、图6以及图7,本申请实施例中通过对第一导电层21的膜层叠构进行改进,使得第一导电层21位于下层第一绝缘层24的第一表面240上的第二子层212采用蚀刻速率较大的材料进行制备,以减小第一导电层21在形成过程中产生蚀刻残留的概率,降低了第一绝缘层24和第二绝缘层25之间发生应力集中的概率,提高了显示面板的稳定性和良品率。
在本申请实施例中,触控功能层20还包括转接线23,且转接线23穿过第二绝缘层25,转接线23的一端连接于第二导电层22,转接线23的另一端连接于第一导电层21,且转接线23的材料可以和第二导电层22相同,也可以跟第一导电层21的材料相同,或者为其他导电材料制得,在此不作限定。
由于本实施例中对第一导电层21的膜层叠构进行改进,因此,可以减小第一绝缘层24的第一表面240的蚀刻残留现象,则第一表面240的粗糙度小于第二绝缘层25的第二表面250的粗糙度。
承上,本申请实施例通过将第一导电层21中位于第一绝缘层24的第一表面240上的第二子层212采用蚀刻速率较大的材料进行制备,以减小第一导电层21的蚀刻残留,降低了与第一导电层21相邻膜层之间的应力集中现象,降低了与第一导电层21相邻膜层发生破裂的概率,提高了显示面板的良品率。
在本申请的另一种实施例中,请参照图8,本实施例与图4所示实施例的区别之处在于:第二导电层22包括层叠设置的第三子层221和第四子层222,且第三子层221位于第四子层222和第二绝缘层25之间,且第三子层221位于第二绝缘层25的第二表面250,即第三子层221与第二绝缘层25远离显示功能层10的一侧表面直接接触。
承上,本申请实施例通过将第一导电层21中位于第一绝缘层24的第一表面240上的第二子层212采用蚀刻速率较大的材料进行制备,以及将第二导电层22中位于第二绝缘层25的第二表面250上的第三子层221采用蚀刻速率较大的材料进行制备,以减小第一导电层21和第二导电层22的蚀刻残留,降低了与第一导电层21和第二导电层22相邻膜层之间的应力集中现象,降低了与第一导电层21相邻膜层、以及与第二导电层22相邻膜层发生破裂的概率,提高了显示面板的良品率。
在本申请的另一种实施例中,请参照图9,在本实施例中,触控功能层20包括多个发光区101以及与发光区101相邻的非发光区102,且多个发光部11与多个发光区101对应设置,例如,可以一个发光部11对应一个发光区101设置。
而第二导电层22以及第一导电层21可以设置于非发光区102内,以避免第二导电层22和第一导电层21影响发光区101的发光。
在本实施例中,触控功能层20还包括聚光结构27,且聚光结构27位于发光区101内;具体地,触控功能层20中开设有围绕发光区101的凹槽,凹槽至少贯穿第一绝缘层24以及所述第二绝缘层25,且位于发光区101内且层叠的第一绝缘层24和第二绝缘层25构成聚光结构27。
在一种实施例中,触控功能层20还包括有机层26,有机层26覆盖于第二绝缘层25远离第一绝缘层24的一侧,并填充于凹槽内,且有机层26的折射率小于第一绝缘层24的折射率和第二绝缘层25的折射率,进而可以对该聚光结构27对应的发光部11起到聚光作用,以提高显示面板的出光效率。
在本实施例中,第一导电层21包括层叠设置的第一子层211和第二子层212,且第二子层212位于第一绝缘层24的第一表面240上,第一子层211位于第二子层212远离第一表面240的一侧;第二导电层22包括层叠设置的第三子层221、第四子层222以及第五子层223,第五子层223位于第二绝缘层25的第二表面250上,第三子层221位于第五子层223远离第二绝缘层25的一侧,第四子层222位于第三子层221远离第五子层223的一侧。
其中,第二子层212的材料的蚀刻速率大于第一子层211的材料的蚀刻速率,第三子层221的材料的蚀刻速率大于第四子层222的材料的蚀刻速率,第三子层221的材料的蚀刻速率大于第五子层223的材料的蚀刻速率;因此,本实施例中可以减少第一绝缘层24的第一表面240上的蚀刻残留,进而第一表面240的粗糙度小于第二绝缘层25的第二表面250的粗糙度。
此外,聚光结构27有层叠的第一绝缘层24和第二绝缘层25形成,且第一表面240位于第一绝缘层24和第二绝缘层25之间,由于本申请实施例可以减少第一表面240的蚀刻残留,减小第一表面240的粗糙度,使得第一表面240更加光滑,进而可以避免发光部11发出的光线在经过聚光结构27时受到蚀刻残留的影响,提高了显示面板的出光均一性。
在一种实施例中,一个聚光结构27对应一个发光区101设置,即一个聚光结构27对应一个发光部11设置;发光部11在基板30上的正投影位于聚光结构27在基板30上的正投影内,以对发光部11发出的光线起到更好的聚光效果。
在一种实施例中,聚光结构27靠近发光部11一侧的宽度大于聚光结构27远离发光部11一侧的宽度,且使得聚光结构27呈上窄下宽的结构。
需要说明的是,在本申请实施例中,围绕聚光结构27设置的凹槽可以与转接线23穿过的过孔在同一道光罩中形成,以节省工艺工序;即当形成第二绝缘层25覆盖第一导电层21之后,对第二绝缘层25进行图案化处理,以形成凹槽以及过孔;然后,在第二绝缘层25的第二表面250上形成金属叠层,且该金属叠层穿过过孔并连接于第一导电层21、以及覆盖第二表面250以及凹槽的内壁;接着,对金属叠层进行蚀刻,以形成位于第二表面250上的第二导电层22以及穿过过孔的转接线23。由于本实施例中对第一导电层21的叠构进行改进,可以减少蚀刻残留,而并未对第二导电层22的叠构进行改进,因此,第二导电层22蚀刻过程中产生的蚀刻残留多于第一导电层21蚀刻过程中产生的蚀刻残留,则第一绝缘层24的第一表面240的粗糙度还小于凹槽内壁的粗糙度。
承上,本申请实施例通过将第一导电层21中位于第一绝缘层24的第一表面240上的第二子层212采用蚀刻速率较大的材料进行制备,以减小第一导电层21的蚀刻残留,降低了与第一导电层21相邻膜层之间的应力集中现象,降低了与第一导电层21相邻膜层发生破裂的概率,提高了显示面板的良品率;且本申请实施例中在发光部11的出光侧形成聚光结构27,进而可以提高显示面板的出光效率,而聚光结构27形成于触控功能层20中,进而提高了显示面板的集成度,减少了显示面板的工艺工序,降低了工艺成本;由于本申请实施例减小了第一表面240的粗糙度,进而可以提高发光部11的出光在经过聚光结构27时的均一性,提高了显示面板的出光均一性。
在本申请的另一种实施例中,请参照图10,本实施例与图9所示实施例的区别之处在于:第二导电层22包括层叠设置的第三子层221和第四子层222,且第三子层221位于第四子层222和第二绝缘层25之间,且第三子层221位于第二绝缘层25的第二表面250,即第三子层221与第二绝缘层25远离显示功能层10的一侧表面直接接触。
承上,本申请实施例通过将第一导电层21中位于第一绝缘层24的第一表面240上的第二子层212采用蚀刻速率较大的材料进行制备,以及将第二导电层22中位于第二绝缘层25的第二表面250上的第三子层221采用蚀刻速率较大的材料进行制备,以减小第一导电层21和第二导电层22的蚀刻残留,降低了与第一导电层21和第二导电层22相邻膜层之间的应力集中现象,降低了与第一导电层21相邻膜层、以及与第二导电层22相邻膜层发生破裂的概率,提高了显示面板的良品率;且本申请实施例中在发光部11的出光侧形成聚光结构27,进而可以提高显示面板的出光效率,而聚光结构27形成于触控功能层20中,进而提高了显示面板的集成度,减少了显示面板的工艺工序,降低了工艺成本;由于本申请实施例减小了第一表面240的粗糙度,进而可以提高发光部11的出光在经过聚光结构27时的均一性,提高了显示面板的出光均一性。
另外,请继续参照图9,本申请实施例还提供一种显示面板,显示面板包括多个发光区101以及与发光区101相邻的非发光区102。
显示面板还包括显示功能层10以及触控功能层20;显示功能层10包括对应发光区101设置发光部11;触控功能层20设置于显示功能层10的一侧,触控功能层20包括依次层叠设置的第一绝缘层24、第一导电层21、第二绝缘层25以及第二导电层22。
其中,触控功能层20还包括对应发光区101设置的聚光结构27,聚光结构27包括位于发光区101内且层叠设置的第一绝缘层24和第二绝缘层25,第一导电层21包括层叠设置的第一子层211和第二子层212,第二子层212与第二绝缘层25远离显示功能层10的一侧表面直接接触,第一子层211设置在第二子层212远离第一绝缘层24的一侧,且第二子层212的材料的蚀刻速率大于第一子层211的材料的蚀刻速率。
在实施应用过程中,本申请实施例通过将第一导电层21中位于第一绝缘层24的第一表面240上的第二子层212采用蚀刻速率较大的材料进行制备,以减小第一导电层21的蚀刻残留,降低了与第一导电层21相邻膜层之间的应力集中现象,降低了与第一导电层21相邻膜层发生破裂的概率,提高了显示面板的良品率;且本申请实施例中在发光部11的出光侧形成聚光结构27,进而可以提高显示面板的出光效率,而聚光结构27形成于触控功能层20中,进而提高了显示面板的集成度,减少了显示面板的工艺工序,降低了工艺成本;由于本申请实施例减小了第一表面240的粗糙度,进而可以提高发光部11的出光在经过聚光结构27时的均一性,提高了显示面板的出光均一性。
需要说明的是,本实施例提供的显示面板中的其他膜层结构均可以参照上述实施例中进行设置,在此不再赘述。
在本申请的一种实施例中,请参照图9,第一导电层21包括层叠设置的第一子层211和第二子层212,且第二子层212位于第一绝缘层24的第一表面240上,即第二子层212与第一绝缘层24远离显示功能层10的一侧表面直接接触,第一子层211位于第二子层212远离第一表面240的一侧;第二导电层22包括层叠设置的第三子层221、第四子层222以及第五子层223,第五子层223位于第二绝缘层25的第二表面250上,即第五子层223与第二绝缘层25远离显示功能层10的一侧表面直接接触,第三子层221位于第五子层223远离第二绝缘层25的一侧,第四子层222位于第三子层221远离第五子层223的一侧。
其中,第二子层212的材料的蚀刻速率大于第一子层211的材料的蚀刻速率,第三子层221的材料的蚀刻速率大于第四子层222的材料的蚀刻速率,第三子层221的材料的蚀刻速率大于第五子层223的材料的蚀刻速率;因此,本实施例中可以减少第一绝缘层24的第一表面240上的蚀刻残留,进而第一表面240的粗糙度小于第二绝缘层25的第二表面250的粗糙度。
进一步地,触控功能层20中开设有围绕发光区101的凹槽,凹槽至少贯穿第一绝缘层24以及所述第二绝缘层25,且位于发光区101内且层叠的第一绝缘层24和第二绝缘层25构成聚光结构27。
在一种实施例中,触控功能层20还包括有机层26,有机层26覆盖于第二绝缘层25远离第一绝缘层24的一侧,并填充于凹槽内,且有机层26的折射率小于第一绝缘层24的折射率和第二绝缘层25的折射率,进而可以对该聚光结构27对应的发光部11起到聚光作用,以提高显示面板的出光效率。
需要说明的是,在本申请实施例中,围绕聚光结构27设置的凹槽可以与转接线23穿过的过孔在同一道光罩中形成,以节省工艺工序;即当形成第二绝缘层25覆盖第一导电层21之后,对第二绝缘层25进行图案化处理,以形成凹槽以及过孔;然后,在第二绝缘层25的第二表面250上形成金属叠层,且该金属叠层穿过过孔并连接于第一导电层21、以及覆盖第二表面250以及凹槽的内壁;接着,对金属叠层进行蚀刻,以形成位于第二表面250上的第二导电层22以及穿过过孔的转接线23。由于本实施例中对第一导电层21的叠构进行改进,可以减少蚀刻残留,而并未对第二导电层22的叠构进行改进,因此,第二导电层22蚀刻过程中产生的蚀刻残留多于第一导电层21蚀刻过程中产生的蚀刻残留,则第一绝缘层24的第一表面240的粗糙度还小于凹槽内壁的粗糙度。
在一种实施例中,第一子层211的材料可以包括金属钛,第二子层212的材料可以包括金属铝或者银等。第三子层221的材料可以包括金属铝或者银等,而第四子层222和第五子层223的材料可以包括金属钛,其中,本申请实施例中通过在第三子层221的上下两侧同时形成第四子层222和第五子层223,在保证信号传输效率的基础上,还可以对第三子层221提供有效的保护作用。
在本申请的另一种实施例中,请参照图10,第二导电层22包括层叠设置的第三子层221和第四子层222,且第三子层221位于第四子层222和第二绝缘层25之间,且第三子层221位于第二绝缘层25的第二表面250,第三子层221与第二绝缘层25远离显示功能层10的一侧表面直接接触。
承上,本申请实施例通过将第一导电层21中位于第一绝缘层24的第一表面240上的第二子层212采用蚀刻速率较大的材料进行制备,以及将第二导电层22中位于第二绝缘层25的第二表面250上的第三子层221采用蚀刻速率较大的材料进行制备,以减小第一导电层21和第二导电层22的蚀刻残留,降低了与第一导电层21和第二导电层22相邻膜层之间的应力集中现象,降低了与第一导电层21相邻膜层、以及与第二导电层22相邻膜层发生破裂的概率,提高了显示面板的良品率;且本申请实施例中在发光部11的出光侧形成聚光结构27,进而可以提高显示面板的出光效率,而聚光结构27形成于触控功能层20中,进而提高了显示面板的集成度,减少了显示面板的工艺工序,降低了工艺成本;由于本申请实施例减小了第一表面240的粗糙度,进而可以提高发光部11的出光在经过聚光结构27时的均一性,提高了显示面板的出光均一性。
另外,本申请实施例还提供一种显示装置,该显示装置包括如上述实施例中所述的显示面板。
可以理解的是,由于该显示装置具有与上述实施例中相同的显示面板,因此,该显示装置具有与上述实施例中所述显示面板相同的有益效果,在此不再赘述。
在上述实施例中,对各个实施例的描述都各有侧重,某个实施例中没有详述的部分,可以参见其他实施例的相关描述。
以上对本申请实施例所提供的一种显示面板及显示装置进行了详细介绍,本文中应用了具体个例对本申请的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想;本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。

Claims (20)

  1. 一种显示面板,其包括:
    显示功能层;
    触控功能层,设置于所述显示功能层的一侧并包括:依次层叠设置的第一绝缘层、第一导电层、第二绝缘层以及第二导电层;
    其中,所述第一导电层包括:层叠设置的第一子层和第二子层,所述第二子层与所述第一绝缘层远离所述显示功能层的一侧表面直接接触,第一子层设置在所述第二子层远离所述第一绝缘层的一侧,所述第二子层的材料的蚀刻速率大于所述第一子层的材料的蚀刻速率。
  2. 根据权利要求1所述的显示面板,其中,所述第二导电层包括:层叠设置的第三子层和第四子层,且所述第三子层位于所述第二绝缘层和所述第四子层之间,所述第三子层的材料的蚀刻速率大于所述第四子层的材料的蚀刻速率。
  3. 根据权利要求2所述的显示面板,其中,所述第三子层与所述第二绝缘层远离所述显示功能层的一侧表面直接接触。
  4. 根据权利要求2所述的显示面板,其中,所述第二导电层还包括设置于所述第三子层和所述第二绝缘层之间的第五子层,所述第五子层的材料的蚀刻速率小于所述第三子层的材料的蚀刻速率,且所述第五子层与所述第二绝缘层远离所述显示功能层的一侧表面直接接触。
  5. 根据权利要求4所述的显示面板,其中,所述第一绝缘层包括远离所述显示功能层的第一表面,所述第二绝缘层包括远离所述显示功能层的第二表面,所述第一表面的粗糙度小于所述第二表面的粗糙度。
  6. 根据权利要求2所述的显示面板,其中,所述第二子层的厚度小于或等于所述第三子层的厚度。
  7. 根据权利要求1所述的显示面板,其中,所述显示面板包括多个发光区以及与所述发光区相邻的非发光区;
    所述显示功能层包括对应所述发光区设置的发光部;
    所述触控功能层还包括对应所述发光区设置的聚光结构;
    其中,所述触控功能层中开设有围绕所述发光区的凹槽,所述凹槽至少贯穿所述第一绝缘层以及所述第二绝缘层,且位于所述发光区内且层叠的所述第一绝缘层和所述第二绝缘层构成所述聚光结构。
  8. 根据权利要求7所述的显示面板,其中,所述触控功能层还包括有机层,所述有机层覆盖于所述第二绝缘层远离所述第一绝缘层的一侧,并填充于所述凹槽内,且所述有机层的折射率小于所述第一绝缘层的折射率和所述第二绝缘层的折射率。
  9. 根据权利要求7所述的显示面板,其中,所述第一绝缘层包括远离所述显示功能层的第一表面,所述第一表面的粗糙度小于所述凹槽内壁的粗糙度。
  10. 一种显示面板,所述显示面板包括多个发光区以及与所述发光区相邻的非发光区,所述显示面板还包括:
    显示功能层,包括对应所述发光区设置的发光部;
    触控功能层,设置于所述显示功能层的一侧,所述触控功能层包括依次层叠设置的第一绝缘层、第一导电层、第二绝缘层以及第二导电层;
    其中,所述触控功能层还包括对应所述发光区设置的聚光结构,所述聚光结构包括位于所述发光区内且层叠设置的所述第一绝缘层和所述第二绝缘层,所述第一导电层包括层叠设置的第一子层和第二子层,所述第二子层与所述第一绝缘层远离所述显示功能层的一侧表面直接接触,第一子层设置在所述第二子层远离所述第一绝缘层的一侧,且所述第二子层的材料的蚀刻速率大于所述第一子层的材料的蚀刻速率。
  11. 根据权利要求10所述的显示面板,其中,所述第二导电层包括:
    层叠设置的第三子层和第四子层,且所述第三子层位于所述第二绝缘层和所述第四子层之间,所述第三子层的材料的蚀刻速率大于所述第四子层的材料的蚀刻速率。
  12. 根据权利要求11所述的显示面板,其中,所述第三子层与所述第二绝缘层远离所述显示功能层的一侧表面直接接触。
  13. 根据权利要求11所述的显示面板,其中,所述第二导电层还包括设置于所述第三子层和所述第二绝缘层之间的第五子层,所述第五子层的材料的蚀刻速率小于所述第三子层的材料的蚀刻速率,且所述第五子层与所述第二绝缘层远离所述显示功能层的一侧表面直接接触。
  14. 根据权利要求13所述的显示面板,其中,所述第一绝缘层包括远离所述显示功能层的第一表面,所述第二绝缘层包括远离所述显示功能层的第二表面,所述第一表面的粗糙度小于所述第二表面的粗糙度。
  15. 根据权利要求11所述的显示面板,其中,所述第二子层的厚度小于或等于所述第三子层的厚度。
  16. 根据权利要求10所述的显示面板,其中,所述触控功能层中开设有围绕所述发光区的凹槽,所述凹槽至少贯穿所述第一绝缘层以及所述第二绝缘层,且位于所述发光区内且层叠的所述第一绝缘层和所述第二绝缘层构成所述聚光结构。
  17. 根据权利要求16所述的显示面板,其中,所述显示面板还包括有机层,所述有机层覆盖于所述第二绝缘层远离所述第一绝缘层的一侧,并填充于所述凹槽内,且所述有机层的折射率小于所述第一绝缘层的折射率和所述第二绝缘层的折射率。
  18. 根据权利要求16所述的显示面板,其中,所述第一绝缘层包括远离所述显示功能层的第一表面,所述第一表面的粗糙度小于所述凹槽内壁的粗糙度。
  19. 一种显示装置,所述显示装置包括显示面板,所述显示面板包括:
    显示功能层;
    触控功能层,设置于所述显示功能层的一侧并包括:依次层叠设置的第一绝缘层、第一导电层、第二绝缘层以及第二导电层;
    其中,所述第一导电层包括:层叠设置的第一子层和第二子层,所述第二子层与所述第一绝缘层远离所述显示功能层的一侧表面直接接触,第一子层设置在所述第二子层远离所述第一绝缘层的一侧,所述第二子层的材料的蚀刻速率大于所述第一子层的材料的蚀刻速率;
    或者,所述显示面板包括多个发光区以及与所述发光区相邻的非发光区,所述显示面板还包括:
    显示功能层,包括对应所述发光区设置的发光部;
    触控功能层,设置于所述显示功能层的一侧,所述触控功能层包括依次层叠设置的第一绝缘层、第一导电层、第二绝缘层以及第二导电层;
    其中,所述触控功能层还包括对应所述发光区设置的聚光结构,所述聚光结构包括位于所述发光区内且层叠设置的所述第一绝缘层和所述第二绝缘层,所述第一导电层包括层叠设置的第一子层和第二子层,所述第二子层与所述第一绝缘层远离所述显示功能层的一侧表面直接接触,第一子层设置在所述第二子层远离所述第一绝缘层的一侧,且所述第二子层的材料的蚀刻速率大于所述第一子层的材料的蚀刻速率。
  20. 根据权利要求19所述的显示装置,其中,所述第二导电层包括:层叠设置的第三子层和第四子层,且所述第三子层位于所述第二绝缘层和所述第四子层之间,所述第三子层的材料的蚀刻速率大于所述第四子层的材料的蚀刻速率。
PCT/CN2024/089117 2024-04-09 2024-04-22 显示面板及显示装置 Pending WO2025213503A1 (zh)

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CN111490076A (zh) * 2019-01-25 2020-08-04 三星显示有限公司 导线、包括导线的显示装置和制造显示装置的方法
CN117479618A (zh) * 2023-07-18 2024-01-30 武汉华星光电半导体显示技术有限公司 一种显示面板及显示装置
CN117479731A (zh) * 2023-06-27 2024-01-30 武汉华星光电半导体显示技术有限公司 显示面板及移动终端
CN117596922A (zh) * 2023-11-08 2024-02-23 武汉华星光电半导体显示技术有限公司 显示面板

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CN111490076A (zh) * 2019-01-25 2020-08-04 三星显示有限公司 导线、包括导线的显示装置和制造显示装置的方法
CN117479731A (zh) * 2023-06-27 2024-01-30 武汉华星光电半导体显示技术有限公司 显示面板及移动终端
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