Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
  • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
  • H10P72/722—Details of electrostatic chucks
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32715—Workpiece holder
  • H01J37/32724—Temperature
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/04—Apparatus for manufacture or treatment
  • H10P72/0431—Apparatus for thermal treatment
  • H10P72/0432—Apparatus for thermal treatment mainly by conduction
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/04—Apparatus for manufacture or treatment
  • H10P72/0431—Apparatus for thermal treatment
  • H10P72/0434—Apparatus for thermal treatment mainly by convection
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
  • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
  • H01J2237/002—Cooling arrangements
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
  • H01J2237/004—Charge control of objects or beams
  • H01J2237/0041—Neutralising arrangements
  • H01J2237/0044—Neutralising arrangements of objects being observed or treated

Definitions

• the present invention relates to components for semiconductor manufacturing equipment.
• a semiconductor manufacturing device component that includes a ceramic plate having a wafer mounting surface and a built-in electrostatic electrode, and a cooling plate provided on the underside of the ceramic plate.
• Patent Document 1 discloses such a ceramic plate that includes a plug placement hole that penetrates the ceramic plate in the vertical direction and a porous plug placed in the plug placement hole.
• Patent Document 1 also discloses a cooling plate that includes a gas hole that penetrates the cooling plate in the vertical direction and communicates with the plug placement hole. In such a semiconductor manufacturing device component, helium gas is introduced into the porous plug from the gas hole of the cooling plate while the wafer is electrostatically adsorbed to the wafer mounting surface.
• the helium gas is then supplied to the back side of the wafer, improving the thermal conduction between the wafer and the ceramic plate. At this time, the helium gas passes through the pores of the porous plug, so that the occurrence of arc discharge on the back side of the wafer can be suppressed compared to when the porous plug is not present.
• the diameter of the porous plug is generally made relatively large to ensure the flow rate of helium gas through the porous plug, and accordingly, the diameter of the plug placement hole is generally made large.
• An electrostatic electrode opening is provided at the position of the electrostatic electrode through which the plug placement hole penetrates, and the diameter of the electrostatic electrode opening increases as the diameter of the plug placement hole increases.
• the wafer adsorption force decreases in the part of the wafer mounting surface directly above the electrostatic electrode opening because there is no electrostatic electrode, but as the diameter of the electrostatic electrode opening increases, the decrease in wafer adsorption force becomes more noticeable.
• the cooling plate does not sufficiently dissipate heat from the part directly above the electrostatic electrode opening, and it is prone to becoming a hot spot singularity.
• the present invention was made to solve these problems, and its main purpose is to prevent the area directly above the electrostatic electrode opening from becoming a singular point.
• the semiconductor manufacturing equipment member of the present invention comprises: a ceramic plate having a wafer mounting surface on its upper surface, the wafer mounting surface having a number of small protrusions on a reference surface for supporting the wafer, and having an electrostatic electrode built in; a plug placement hole provided in the ceramic plate so as to extend in a vertical direction; an electrostatic electrode opening portion provided at a position where the plug arrangement hole passes through the electrostatic electrode, the electrostatic electrode opening portion having a diameter equal to or larger than that of the plug arrangement hole; a cooling plate provided on a lower surface of the ceramic plate; a gas hole penetrating the cooling plate in the vertical direction and communicating with the plug placement hole; a plug that is disposed in the plug placement hole and has a gas flow path that allows a thermal conduction gas to flow in a vertical direction; a raised portion provided so as to surround the gas flow passage, the raised portion having a top surface higher than the reference surface and lower than a top surface of the small protrusion; It is equipped with the following:
• a raised portion is provided so as to surround the gas flow path, and the top surface of the raised portion is higher than the reference surface and lower than the top surface of the small protrusion.
• the thermal conductivity of the raised portion is higher than the thermal conductivity of the heat-conducting gas. Therefore, even if the wafer suction force is low in the portion of the wafer mounting surface directly above the electrostatic electrode opening, the heat of the portion directly above the raised portion is easily transferred to the cooling plate via the raised portion.
• the top surface of the raised portion is higher than the reference surface, the transfer of heat in the portion directly above the raised portion is promoted, and the portion directly above the raised portion can be prevented from becoming too hot.
• the portion directly above the raised portion is lower than the top surface of the small protrusion, the transfer of heat in the portion directly above the raised portion is promoted too much, and the portion directly above the raised portion can be prevented from becoming too cold. Therefore, the portion directly above the electrostatic electrode opening can be prevented from becoming a singular point.
• the raised portion and the ceramic plate may be integral. Therefore, by making the raised portion and the ceramic plate integral (making the raised portion part of the ceramic plate), the raised portion can be formed relatively easily.
• the raised portion may have a plug covering portion that covers the upper surface of the plug, and the plug covering portion may have a small hole that penetrates in the vertical direction. In this way, the plug is protected by the plug covering portion.
• the plug may be one that includes the gas flow path in the dense body.
• the plug placement hole may be provided so as to penetrate the ceramic plate in the vertical direction, the plug may protrude from an upper opening of the plug placement hole and function as the raised portion, and the upper surface of the plug may be at the same height as the upper surface of the raised portion.
• the depth Y from the top surface of the small protrusion to the top surface of the protuberance may be 1/2 or more and 2/3 or less of the height A from the reference plane to the top surface of the small protrusion. If the depth Y is greater than 2/3 of the height A, the heat directly above the electrostatic electrode opening is less likely to be transferred sufficiently to the cooling plate. If the depth Y is less than 1/2 of the height A, there is a risk that the heat directly above the electrostatic electrode opening may be transferred too much to the cooling plate or that the flow of heat-conducting gas may be impeded.
• the raised portion may be ring-shaped in a plan view, and the outer diameter of the raised portion may be larger than the outer diameter of the gas flow path and smaller than the diameter of the electrostatic electrode opening. In this way, the effects of the present invention are easily obtained.
• FIG. 2 is a longitudinal sectional view of a semiconductor manufacturing equipment member 10.
• FIG. FIG. 2 is a partially enlarged view of FIG.
• FIG. 13 is a partially enlarged longitudinal sectional view of another embodiment.
• FIG. 13 is a partially enlarged longitudinal sectional view of another embodiment.
• FIG. 13 is a partially enlarged longitudinal sectional view of another embodiment.
• FIG. 13 is a partially enlarged longitudinal sectional view of another embodiment.
• FIG. 1 is a vertical cross-sectional view of a semiconductor manufacturing equipment member 10
• FIG. 2 is a plan view of a ceramic plate 20
• FIG. 3 is a partially enlarged view of FIG. 1. Note that in FIG. 3, the heights of the small circular protrusions 21b and the raised portion 60 are exaggerated.
• the semiconductor manufacturing equipment component 10 includes a ceramic plate 20, a cooling plate 30, a metal bonding layer 40, a porous plug 50, a raised portion 60 (see FIG. 2 and FIG. 3), and an insulating tube 70.
• the ceramic plate 20 is a ceramic circular plate (e.g., 300 mm in diameter, 5 mm in thickness) made of alumina sintered body or aluminum nitride sintered body.
• the upper surface of the ceramic plate 20 is the wafer mounting surface 21.
• the ceramic plate 20 has an electrode 22 built in.
• the wafer mounting surface 21 of the ceramic plate 20 has a seal band 21a formed along the outer edge, and a plurality of circular small protrusions 21b formed on the entire surface.
• the seal band 21a and the circular small protrusions 21b have the same height, for example, several ⁇ m to several tens of ⁇ m.
• the electrode 22 is a flat mesh electrode used as an electrostatic electrode, and a DC voltage can be applied to it.
• the wafer W When a DC voltage is applied to the electrode 22, the wafer W is attracted and fixed to the wafer mounting surface 21 (specifically, the upper surface of the seal band 21a and the upper surface of the circular small protrusions 21b) by electrostatic attraction force, and when the application of the DC voltage is released, the wafer W is released from the wafer mounting surface 21.
• the portion of the wafer mounting surface 21 on which the seal band 21a, small circular protrusions 21b, and raised portion 60 (described below) are not provided is referred to as the reference surface 21c.
• the plug arrangement holes 24 are provided in the ceramic plate 20 so as to extend vertically through the electrode 22.
• the plug arrangement holes 24 are cylindrical holes that vertically penetrate the ceramic plate 20, and are provided in multiple locations on the ceramic plate 20 (e.g., multiple locations equally spaced along the circumferential direction as shown in FIG. 2).
• a porous plug 50 which will be described later, is arranged in the plug arrangement holes 24.
• the electrode 22 is provided with an electrode through hole 23 so as to be concentric with the plug arrangement hole 24.
• the diameter B of the electrode through hole 23 is larger than the diameter of the plug arrangement hole 24.
• the cooling plate 30 is a disk (having the same diameter as or larger than the ceramic plate 20) with good thermal conductivity, and is provided on the underside of the ceramic plate 20. Inside the cooling plate 30, a refrigerant flow path 32 through which the refrigerant circulates and a gas hole 34 through which gas is supplied to the porous plug 50 are formed.
• the refrigerant flow path 32 is formed in a single stroke from the inlet to the outlet over the entire surface of the cooling plate 30 in a plan view.
• the gas hole 34 is a cylindrical hole, and is provided at a position facing the plug arrangement hole 24.
• materials for the cooling plate 30 include metal materials and composite materials of metal and ceramic. Examples of metal materials include Al, Ti, Mo, and alloys thereof.
• composite materials of metal and ceramic include metal matrix composite materials (MMC) and ceramic matrix composite materials (CMC).
• MMC metal matrix composite materials
• CMC ceramic matrix composite materials
• Specific examples of such composite materials include a material containing Si, SiC and Ti (also called SiSiCTi), a material in which a porous SiC body is impregnated with Al and/or Si, a composite material of Al2O3 and TiC, etc. It is preferable to select a material for the cooling plate 30 that has a thermal expansion coefficient close to that of the material for the ceramic plate 20.
• the cooling plate 30 is also used as an RF electrode.
• the metal bonding layer 40 bonds the lower surface of the ceramic plate 20 to the upper surface of the cooling plate 30.
• the metal bonding layer 40 is formed, for example, by TCB (thermal compression bonding).
• TCB is a known method in which a metal bonding material is sandwiched between two components to be bonded, and the two components are pressurized and bonded while being heated to a temperature below the solidus temperature of the metal bonding material.
• the metal bonding layer 40 has a round hole 42 that penetrates the metal bonding layer 40 in the vertical direction at a position opposite the gas hole 34.
• the porous plug 50 is placed and fixed in the plug placement hole 24.
• the outer peripheral surface of the porous plug 50 and the inner peripheral surface of the plug placement hole 24 may be bonded, or the male screw portion provided on the outer peripheral surface of the porous plug 50 may be screwed into the female screw portion provided on the inner peripheral surface of the plug placement hole 24.
• holes may be made in the vertical direction in the molded plate before the ceramic plate 20 is fired, and the holes may be filled with a mixture of ceramic powder and resin powder, and then the entire plate may be fired to burn off the resin powder in the holes and sinter the ceramic powder, thereby producing the porous plug 50 and the ceramic plate 20.
• the porous plug 50 has many holes throughout, so that the thermally conductive gas can flow in the vertical direction through the holes. Therefore, the entire porous plug 50 serves as a gas flow path.
• the upper surface of the porous plug 50 is at the same height as the upper surface of the raised portion 60.
• a porous bulk body obtained by sintering ceramic powder can be used as the porous plug 50.
• the ceramic for example, alumina or aluminum nitride can be used.
• the porosity of the porous plug 50 is preferably 30% or more, and the average pore diameter is preferably 20 ⁇ m or more.
• the porosity of the porous plug 50 may be 70% or less.
• the raised portion 60 is a flat and dense ring-shaped portion arranged to surround the porous plug 50 (also around the plug placement hole 24).
• the peripheral portion of the raised portion 60 around the plug placement hole 24 is higher than the reference plane 21c and lower than the top surfaces of the seal band 21a and the circular small protrusions 21b.
• the raised portion 60 and the ceramic plate 20 are the same thing. Therefore, the thermal conductivity of the raised portion 60 is higher than the thermal conductivity of helium gas, which is a thermally conductive gas.
• the depth Y of the raised portion 60 (the vertical length from the upper surface of the circular small protrusion 21b to the upper surface of the raised portion 60) is greater than or equal to 1/2 and less than or equal to 2/3 of the height A of the circular small protrusions 21b (the vertical length from the reference plane 21c to the upper surface of the circular small protrusions 21b).
• the inner diameter of the raised portion 60 is equal to the diameter C of the porous plug 50 (the same as the outer diameter of the gas flow path), and the outer diameter X of the raised portion 60 is larger than the diameter C of the porous plug 50 and is equal to or smaller than the diameter B of the electrode through hole 23.
• the insulating tube 70 is a tube made of dense ceramic (e.g. dense alumina, etc.) and has a circular shape in a plan view.
• the outer circumferential surface of the insulating tube 70 is bonded to the inner circumferential surface of the circular hole 42 of the metal bonding layer 40 and the inner circumferential surface of the gas hole 34 of the cooling plate 30 via an adhesive layer (not shown).
• the adhesive layer may be an organic adhesive layer (resin adhesive layer) or an inorganic adhesive layer.
• An adhesive layer may also be provided between the upper surface of the insulating tube 70 and the lower surface of the ceramic plate 20.
• the internal space of the insulating tube 70 is connected to the porous plug 50. Therefore, when gas is introduced into the gas hole 34, the gas passes through the insulating tube 70 and the porous plug 50 and is supplied to the back surface of the wafer W.
• the semiconductor manufacturing equipment member 10 is installed in a chamber (not shown), and the wafer W is placed on the wafer placement surface 21. Then, the chamber is depressurized by a vacuum pump to adjust the chamber to a predetermined vacuum level, and a DC voltage is applied to the electrode 22 of the ceramic plate 20 to generate an electrostatic adsorption force, and the wafer W is adsorbed and fixed to the wafer placement surface 21 (specifically, the upper surface of the seal band 21a or the upper surface of the circular small protrusion 21b).
• the chamber is made into a reaction gas atmosphere of a predetermined pressure (for example, several tens to several hundreds of Pa), and in this state, a high-frequency voltage is applied between an upper electrode (not shown) provided on the ceiling part of the chamber and the cooling plate 30 of the semiconductor manufacturing equipment member 10 to generate plasma.
• a coolant is circulated through the coolant flow path 32 of the cooling plate 30.
• a backside gas is introduced into the gas hole 34 from a gas cylinder (not shown).
• a thermally conductive gas for example, helium
• the backside gas is supplied through the insulating tube 70 and the porous plug 50 and sealed in the space between the back surface of the wafer W and the reference surface 21c of the wafer mounting surface 21 and the space between the back surface of the wafer W and the raised portion 60.
• This backside gas ensures efficient thermal conduction between the wafer W and the ceramic plate 20.
• a manufacturing example of the semiconductor manufacturing equipment member 10 will be described.
• a semiconductor manufacturing equipment member 10 with a flat wafer mounting surface 21 (one without the seal band 21a, the circular small protrusions 21b, and the raised portion 60) is manufactured.
• the manufacturing method is publicly known (for example, Patent Document 1), so the description will be omitted here.
• a mask with circular holes is placed on the flat wafer mounting surface 21, the exposed portion is blasted, and then the mask is removed. This forms the raised portion 60.
• a mask is formed on the wafer mounting surface 21 to cover the positions corresponding to the seal band 21a and the circular small protrusions 21b and the positions corresponding to the raised portion 60, and then the mask is removed. This forms the seal band 21a, the circular small protrusions 21b, and the reference surface 21c. In this way, the semiconductor manufacturing equipment member 10 is obtained.
• the raised portion 60 whose thermal conductivity is higher than that of the heat-conducting gas, is provided so as to surround the porous plug 50 (the whole corresponds to the gas flow path). Therefore, even if the wafer suction force is low in the part of the wafer mounting surface 21 directly above the electrode through-hole 23, the heat of the part directly above the raised portion 60 is easily transferred to the cooling plate 30 via the raised portion 60. In addition, since the top surface of the raised portion 60 is higher than the reference surface 21c, the transfer of heat in the part directly above the raised portion is promoted, and the part directly above the raised portion can be prevented from becoming too hot.
• the top surface of the raised portion 60 is lower than the top surface of the circular small protrusion 21b, the transfer of heat in the part directly above the raised portion is promoted too much, and the part directly above the raised portion can be prevented from becoming too cold. Therefore, the part directly above the electrode through-hole 23 can be prevented from becoming a singular point such as a hot spot.
• the raised portion 60 and the ceramic plate 20 are one piece.
• the ceramic plate 20 has a higher thermal conductivity than a heat-conducting gas (for example, the thermal conductivity of alumina is about 30 W/mK, the thermal conductivity of aluminum nitride is about 150 W/mK, and the thermal conductivity of helium gas is about 0.02 W/mK, depending on the gas pressure used). Therefore, by making the raised portion 60 and the ceramic plate 20 one piece (making the raised portion 60 a part of the ceramic plate 20), the raised portion 60 can be formed relatively easily.
• the upper surface of the porous plug 50 is at the same height as the upper surface of the raised portion 60. Therefore, it can be processed relatively easily compared to when the upper surfaces of the porous plug 50 and the raised portion 60 are at different heights.
• the depth Y from the top surface of the small circular protrusion 21b to the top surface of the raised portion 60 is 1/2 or more and 2/3 or less of the height A from the reference plane 21c to the top surface of the small circular protrusion 21b. If the depth Y is greater than 2/3 of the height A, it is not preferable because the heat directly above the electrode through hole 23 is unlikely to be transferred sufficiently to the cooling plate 30. If the depth Y is less than 1/2 of the height A, it is not preferable because there is a risk that the heat directly above the electrode through hole 23 may be transferred too much to the cooling plate 30 or the flow of heat conduction gas may be hindered.
• the raised portion 60 is ring-shaped in a plan view, and the outer diameter X of the raised portion 60 is greater than the diameter C of the porous plug 50 and is equal to or smaller than the diameter B of the electrode through-hole 23. This makes it easier to obtain the effects of the present invention.
• the plug 150 shown in FIG. 4 may be used instead of the porous plug 50.
• the plug 150 is a cylindrical dense body 152 provided with a gas flow passage 154.
• the dense body 152 is made of a material (e.g., a ceramic material) having a higher thermal conductivity than helium, which is a thermally conductive gas.
• the gas flow passage 154 is a spiral flow passage provided inside the dense body 152 and opens to the upper and lower surfaces of the dense body 152. Therefore, gas can flow in the vertical direction.
• the outer diameter of the gas flow passage 154 is the diameter of the outer periphery of the gas flow passage 154 when the gas flow passage 154 is viewed in a plane. Even when the plug 150 is used instead of the porous plug 50, the same effect as in the above-described embodiment can be obtained.
• the shape of the gas flow passage 154 is not limited to a spiral shape, and may be, for example, a zigzag shape.
• the vertical length of the porous plug 50 is the same as the vertical length of the plug arrangement hole 24, but the present invention is not limited to this.
• the vertical length of the porous plug 50 may be shortened so that the lower surface of the porous plug 50 is located above the lower opening of the plug arrangement hole 24.
• the vertical length of the porous plug 50 may be lengthened so that the lower surface of the porous plug 50 is located inside the insulating tube 70 below the lower opening of the plug arrangement hole 24.
• a stepped plug arrangement hole 224 having an upper large diameter portion and a lower small diameter portion may be provided in the ceramic plate 20, and the porous plug 250 may be placed in the upper large diameter portion.
• FIG. 5 the same components as in the above-described embodiment are denoted by the same reference numerals.
• the plug 150 in FIG. 4 may be used instead of the porous plug 250.
• the upper surface of the porous plug 50 is at the same height as the upper surface of the raised portion 60, but this is not particularly limited.
• the configuration shown in FIG. 6 may be adopted.
• the upper surface of the porous plug 250 is lower than the upper surface of the raised portion 60, and the raised portion 60 has a plug covering portion 261 that covers the upper surface of the porous plug 250.
• the plug covering portion 261 has a plurality of small holes 262 that penetrate in the vertical direction and communicate with the porous plug 250 (gas flow path).
• the plug covering portion 261 may be integrated with the ceramic plate 20, or may be a ceramic cover body separate from the ceramic plate 20. Even when the configuration of FIG. 6 is adopted, the same effect as the above-described embodiment can be obtained.
• the porous plug 250 is protected by the plug covering portion 261. Note that in FIG. 6, the same components as those in the above-described embodiment are given the same reference numerals.
• the porous plug 50 and the raised portion 60 are separate bodies, but the present invention is not limited to this.
• the configuration shown in FIG. 7 may be adopted.
• the plug 150 in FIG. 7 is a cylindrical dense body 152 with a gas flow path 154 (see FIG. 4), and is a substitute for the porous plug 50 and the raised portion 60.
• the plug arrangement hole 324 is provided in an area surrounded by a plurality of circular small protrusions 21b, similar to the plug arrangement hole 24 in FIG. 2.
• the vertical length of the plug 150 is longer than the vertical length of the plug arrangement hole 324.
• the plug 150 protrudes upward from the upper opening of the plug arrangement hole 324, and the dense portion 156 (the ring-shaped portion surrounded by a dashed line in FIG. 7) of this protruding portion surrounding the gas flow path 154 functions as the raised portion.
• the outer diameter X of the ring-shaped portion 156, which is the raised portion, is larger than the outer diameter C of the gas flow passage 154 and is equal to or smaller than the diameter B of the electrode through hole 23. Even when the configuration of FIG. 7 is adopted, the same effect as in the above-mentioned embodiment can be obtained.
• the plug 150 by forming the plug 150 as the dense body 152 in which the gas flow passage 154 is formed, it becomes unnecessary to provide a raised portion separately from the plug 150. Note that in FIG. 7, the same components as in the above-mentioned embodiment are given the same reference numerals.
• the insulating tube 70 is provided, but the insulating tube 70 may be omitted.
• a gas channel structure may be provided instead of providing the gas holes 34 in the cooling plate 30, a gas channel structure may be provided.
• the gas channel structure may include a ring portion provided inside the cooling plate 30 and concentric with the cooling plate 30 in a plan view, an inlet portion for introducing gas from the back surface of the cooling plate 30 to the ring portion, and a distribution portion (corresponding to the gas holes 34 described above) for distributing gas from the ring portion to each porous plug 50.
• the number of inlet portions may be less than the number of distribution portions, and may be, for example, one.
• the ring portion of the gas channel structure may be inside the ceramic plate 20.
• an electrostatic electrode is exemplified as the electrode 22 built into the ceramic plate 20, but this is not particularly limited.
• a heater electrode resistive heating element
• an RF electrode may be built into the ceramic plate 20.
• the ceramic plate 20 and the cooling plate 30 are joined by a metal joining layer 40, but a resin adhesive layer may be used instead of the metal joining layer 40.
• This invention can be used for semiconductor manufacturing equipment components.

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• Physics & Mathematics (AREA)
• Engineering & Computer Science (AREA)
• Plasma & Fusion (AREA)
• Chemical & Material Sciences (AREA)
• Analytical Chemistry (AREA)
• Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
• Drying Of Semiconductors (AREA)

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• 2023
  • 2023-09-27 CN CN202380013864.4A patent/CN121925993A/zh active Pending
  • 2023-09-27 JP JP2024520721A patent/JP7686884B1/ja active Active
  • 2023-09-27 WO PCT/JP2023/035051 patent/WO2025069231A1/ja active Pending
• 2024
  • 2024-04-08 US US18/628,923 patent/US12598952B2/en active Active
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