WO2024255534A1 - 减少晶圆曝光驻波效应的制备方法 - Google Patents

减少晶圆曝光驻波效应的制备方法 Download PDF

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WO2024255534A1
WO2024255534A1 PCT/CN2024/094116 CN2024094116W WO2024255534A1 WO 2024255534 A1 WO2024255534 A1 WO 2024255534A1 CN 2024094116 W CN2024094116 W CN 2024094116W WO 2024255534 A1 WO2024255534 A1 WO 2024255534A1
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wafer
preparation
standing wave
exposure
wave effect
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李帅
张磊
周温涵
钟伦威
郭嘉帅
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Lansus Technologies Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the object of the present invention is to provide a preparation method for reducing the standing wave effect of wafer exposure, so as to solve the problem in the related art that the wafer is very likely to cause the standing wave effect or its design freedom is limited.
  • the semiconductor film is made of at least one of silicon and germanium, and has a thickness of 10 nm to 2 ⁇ m.
  • the photoresist is spin-coated by a high-speed rotary machine.
  • the exposed wafer is first spin-coated with a developer.
  • the anti-reflection film is removed by wet etching or dry etching: the anti-reflection film is removed by wet etching: the wet etching is carried out using a mixed solution of hydrofluoric acid, nitric acid and water, or a mixed solution of hydrofluoric acid, nitric acid and acetic acid, or a tetramethylammonium hydroxide solution, or a potassium hydroxide solution.
  • the preparation method for reducing the standing wave effect of wafer exposure in the present invention is to coat the anti-reflection film of semiconductor material on the back of the wafer, so that the ultraviolet light incident on the back of the wafer can be absorbed by the anti-reflection film, so as to greatly reduce the probability of reflected light.
  • the valence electrons in the valence band easily enter the conduction band, so the short-wave absorption limit will move to the long wave, so the transparent area of the material is generally in the near-infrared and infrared bands, and has good absorption for the light in the ultraviolet and visible bands.
  • the anti-reflection film on the back is removed to prepare the process of other layers, that is, by coating the anti-reflection film of semiconductor material on the back of the wafer, the standing wave effect caused by the interference between the reflected light on the front and back of the wafer is greatly reduced, thereby improving its interdigital morphology to form a perfect sidewall structure, thereby improving the electrical performance and power tolerance of the filter.
  • the film thickness of the wafer is no longer restricted, which greatly improves the freedom of its design.
  • the removal of the anti-reflection film is carried out by wet etching or dry etching.
  • the wet etching is carried out using a mixed solution of hydrofluoric acid (HF), nitric acid (HNO3) and water, or a mixed solution of hydrofluoric acid, nitric acid and acetic acid (CH3COOH), or a tetramethylammonium hydroxide (TMAH) solution, or a potassium hydroxide (KOH) solution; the ratio of hydrofluoric acid, nitric acid and water is 1:3:8, and the ratio of hydrofluoric acid, nitric acid and acetic acid is also 1:3:8.
  • the wet etching can also be carried out using other similar solutions.
  • step 2 and its sub-steps S21-S24 are all for forming a photolithography pattern, and can be adaptively modified, added or deleted without affecting the technical effect achieved by the preparation method for reducing the standing wave effect of wafer exposure.
  • the anti-reflection film on the back is removed to prepare other layers. That is, by coating the anti-reflection film of semiconductor material on the back of the wafer, the standing wave effect caused by the interference between the reflected light on the front and back of the wafer is greatly reduced, thereby improving its interdigital morphology (as shown in Figure 5) to form a perfect sidewall structure, thereby improving the electrical performance and power tolerance of the filter.
  • the film thickness of the wafer is no longer restricted, which greatly improves its design freedom.

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Manufacturing & Machinery (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

一种减少晶圆曝光驻波效应的制备方法，包括如下步骤：S1、对晶圆的背面进行减反射膜的镀制；其中，晶圆为压电材料晶圆，减反射膜为半导体薄膜；S2、对镀制减反射膜后的晶圆的表面旋涂光刻胶并进行曝光和显影处理，以形成光刻图案；S3、剥离形成光刻图案的晶圆上的光刻胶；S4、去除剥离光刻胶后的晶圆上的减反射膜。通过上述制备方法不仅可以减少晶圆的正面和背面的反射光之间的干涉所导致的驻波效应，以改善叉指形貌，形成完美的侧壁结构，还能提升其设计的自由度。

Description

减少晶圆曝光驻波效应的制备方法 【技术领域】
本发明涉及晶圆制备技术领域，尤其涉及一种减少晶圆曝光驻波效应的制备方法。
【背景技术】
随着第五代无线通信技术解决方案的发展，智能手机需要增加滤波器来支持不断上升的频带数目，而频带密集使得系统中上行之间的干扰问题变得突出，为了保证频谱之间的高质量数据通信，一款典型的高端智能手机至少需要配备50个射频前端滤波器。而随着通信技术的不断升级(5G手机)以及诸如载波聚合(CA)、多输入多输出(MIMO)等新技术的部署，通信频段不断增加，这个数字将呈现持续猛烈的增长态势。
声表面波(SAW)谐振器是利用压电效应和声表面波传播的物理特性制成的一种换能式无源带通滤波器，SAW谐振器因其体积小、抗辐射能力强、高速、低功耗和高可靠性，使其在通信电路设计中越来越受到重视。SAW谐振器的谐振频率可通过光刻技术在很宽的范围内进行精准调谐，并且其具有较小的形状系数、低连接损耗和较低的成本，非常适于不同频率滤波器的单片集成。
声表面波滤波器在前道制备加工中，最重要的工序莫过于曝光，它决定了叉指的宽度以及金属化率，从而影响滤波器的中心频率以及带宽。然而，相关技术使用的钽酸锂或铌酸锂晶圆在紫外波段是透明的，极易发生由于其上下表面(正面和背面)的反射光干涉所导致的驻波效应(如图1所示)，造成波浪状叉指侧壁(如图2所示)，从 而影响滤波器的性能。当然，驻波效应可以通过计算晶圆的折射率和晶圆厚度之间的关系，以优化晶圆膜厚的选择，但这会导致晶圆的厚度选择受到限制，在一定程度上降低了设计的自由度。
【发明内容】
本发明的目的在于提供一种减少晶圆曝光驻波效应的制备方法，以解决相关技术中的晶圆极易导致驻波效应或其设计自由度受到限制的问题。
为了解决上述技术问题，本发明提供了一种减少晶圆曝光驻波效应的制备方法，其包括以下步骤：
S1、对晶圆的背面进行减反射膜的镀制；其中，所述晶圆为压电材料晶圆，所述减反射膜为半导体薄膜；
S2、对镀制减反射膜后的所述晶圆的表面旋涂光刻胶并进行曝光和显影处理，以形成光刻图案；
S3、剥离形成光刻图案的所述晶圆上的光刻胶；
S4、去除剥离光刻胶后的所述晶圆上的减反射膜。
优选的，所述步骤S2具体包括如下子步骤：
S21、对镀制减反射膜后的所述晶圆的表面旋涂光胶；
S22、对旋涂光刻胶后的所述晶圆进行曝光；
S23、去除曝光后的所述晶圆的未曝光区域；
S24、对去除未曝光区域后的所述晶圆进行金属薄膜的镀制，以形成光刻图案。
优选的，所述晶圆由钽酸锂、铌酸锂以及石英中的任意一种材料制成。
优选的，所述半导体薄膜由硅和锗中的至少一种材料制成，所述半导体薄膜的厚度为10nm～2μm。
优选的，所述步骤S1中，所述减反射膜的镀制通过电子束蒸发的方法进行。
优选的，所述步骤S2中，所述光刻胶的旋涂通过高速旋转机进行。
优选的，所述步骤S3中，所述曝光使用DUV光源通过掩模版进行。
优选的，所述步骤S23中，去除曝光后的所述晶圆的未曝光区域之前，先对曝光后的所述晶圆旋涂显影液后再进行。
优选的，所述步骤S3中，所述光刻胶的剥离通过化学溶剂或等离子体氧化系统进行。
优选的，所述步骤S4中，所述减反射膜的去除通过湿法腐蚀或干法刻蚀的方法进行：所述减反射膜的去除通过湿法腐蚀的方法进行：所述湿法腐蚀采用氢氟酸、硝酸以及水的混合溶液，或氢氟酸、硝酸以及醋酸的混合溶液，或四甲基氢氧化铵溶液，或氢氧化钾溶液进行。
与相关技术相比，本发明中减少晶圆曝光驻波效应的制备方法通过在晶圆的背面镀制半导体材料的减反射膜，从而可以通过减反射膜吸收入射到晶圆背面的紫外光线，以大大减少反射光的发生几率，并基于其半导体材料禁带宽度窄，价带中价电子容易进入导带，因而短波吸收限会移向长波，所以材料的透明区一般在近红外和红外波段，对紫外及可见波段的光线具有较好的吸收性，进而在声学层的所有工序完成后，再去除背面的减反射膜，以进行其它层的工艺制备，即通过在晶圆的背面镀制半导体材料的减反射膜，大大的减少了晶圆的正面和背面的反射光之间的干涉所导致的驻波效应，从而改善其叉指形貌，以形成完美的侧壁结构，进而改善滤波器的电性能及功率耐受性。另外，由于反射光的吸收，因此不再需要考虑晶圆的折射率和膜厚之间的关系，即晶圆的膜厚不再受到限制，大大的提高了其设计的自由度。
【附图说明】
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图， 其中：
图1为相关技术中的晶圆上下表面发射光之间的干涉效应示意图；
图2为相关技术中的晶圆造成波浪状叉指侧壁的结构示意图；
图3为本发明实施例提供的一种减少晶圆曝光驻波效应的制备方法的步骤流程示意图；
图4为本发明实施例提供的一种减少晶圆曝光驻波效应的制备方法中步骤S2的子步骤流程示意图；
图5为本发明实施例通过减少晶圆曝光驻波效应的制备方法制备出的晶圆的叉指表面形貌示意图。
【具体实施方式】
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
本发明实施例提供了一种减少晶圆曝光驻波效应的制备方法，结合图3所示，其包括以下步骤：
S1、对晶圆的背面进行减反射膜的镀制。
其中，所述晶圆为压电材料晶圆，且由钽酸锂、铌酸锂以及石英中的任意一种材料制成。
所述减反射膜为半导体薄膜，即所述减反射膜为半导体材料制成的薄膜；所述半导体薄膜包含硅或锗，即所述半导体薄膜可以由硅或锗制成，或者所述半导体薄膜中掺杂硅或锗，当然，所述半导体薄膜还可以选用其它的半导体材料制成。
所述半导体薄膜的厚度为10nm～2μm。
所述减反射膜的镀制通过电子束蒸发的方法进行。
S2、对镀制减反射膜后的所述晶圆的表面旋涂光刻胶并进行曝光 和显影处理，以形成光刻图案。
具体地，如图4所示，所述步骤S2具体包括如下子步骤：
S21、对镀制减反射膜后的所述晶圆的表面旋涂光胶；
S22、对旋涂光刻胶后的所述晶圆进行曝光；
S23、去除曝光后的所述晶圆的未曝光区域；
S24、对去除未曝光区域后的所述晶圆进行金属薄膜的镀制，以形成光刻图案。
其中，所述光刻胶的旋涂通过高速旋转机进行；所述曝光使用DUV光源通过掩模版进行；去除曝光后的所述晶圆的未曝光区域之前，先对曝光后的所述晶圆旋涂显影液后再进行。
S3、剥离形成光刻图案的所述晶圆上的光刻胶。
其中，所述光刻胶的剥离通过化学溶剂或等离子体氧化系统进行。
S4、去除剥离光刻胶后的所述晶圆上的减反射膜。
其中，所述减反射膜的去除通过湿法腐蚀或干法刻蚀的方法进行。所述湿法腐蚀采用氢氟酸(HF)、硝酸(HNO3)以及水的混合溶液，或氢氟酸、硝酸以及醋酸(CH3COOH)的混合溶液，或四甲基氢氧化铵(TMAH)溶液，或氢氧化钾(KOH)溶液进行；氢氟酸、硝酸以及水的比例为1:3:8，氢氟酸、硝酸以及醋酸的比例也为1:3:8。当然，根据实际需求，所述湿法腐蚀还可以采用其它类似的溶液进行。
另外，所述步骤2及其子步骤S21-S24均是为了形成光刻图案，可以进行适应性修改、增加或删除，均未影响所述减少晶圆曝光驻波效应的制备方法所达到的技术效果。
与相关技术相比，本实施例中减少晶圆曝光驻波效应的制备方法通过在晶圆的背面镀制半导体材料的减反射膜，从而可以通过减反射膜吸收入射到晶圆背面的紫外光线，以大大减少反射光的发生几率，并基于其半导体材料禁带宽度窄，价带中价电子容易进入导带，因而短波吸收限会移向长波，所以材料的透明区一般在近红外和红外波段，对紫外及可见波段的光线具有较好的吸收性，进而在声学层的所有工 序完成后，再去除背面的减反射膜，以进行其它层的工艺制备，即通过在晶圆的背面镀制半导体材料的减反射膜，大大的减少了晶圆的正面和背面的反射光之间的干涉所导致的驻波效应，从而改善其叉指形貌(如图5所示)，以形成完美的侧壁结构，进而改善滤波器的电性能及功率耐受性。另外，由于反射光的吸收，因此不再需要考虑晶圆的折射率和膜厚之间的关系，即晶圆的膜厚不再受到限制，大大的提高了其设计的自由度。
另外，本发明还提供了一种滤波器的实施例，该滤波器的晶圆在制备时包含上述实施例中减少晶圆曝光驻波效应的制备方法。由于本实施例中的滤波器的晶圆在制备时包含上述实施例中减少晶圆曝光驻波效应的制备方法，因此其也能达到上述实施例中减少晶圆曝光驻波效应的制备方法所达到的技术效果，在此不做赘述。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其它相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (10)

  1. 一种减少晶圆曝光驻波效应的制备方法，其特征在于，所述减少晶圆曝光驻波效应的制备方法包括以下步骤：
    S1、对晶圆的背面进行减反射膜的镀制；其中，所述晶圆为压电材料晶圆，所述减反射膜为半导体薄膜；
    S2、对镀制减反射膜后的所述晶圆的表面旋涂光刻胶并进行曝光和显影处理，以形成光刻图案；
    S3、剥离形成光刻图案的所述晶圆上的光刻胶；
    S4、去除剥离光刻胶后的所述晶圆上的减反射膜。
  2. 如权利要求1所述的减少晶圆曝光驻波效应的制备方法，其特征在于，所述步骤S2具体包括如下子步骤：
    S21、对镀制减反射膜后的所述晶圆的表面旋涂光胶；
    S22、对旋涂光刻胶后的所述晶圆进行曝光；
    S23、去除曝光后的所述晶圆的未曝光区域；
    S24、对去除未曝光区域后的所述晶圆进行金属薄膜的镀制，以形成光刻图案。
  3. 如权利要求1所述的减少晶圆曝光驻波效应的制备方法，其特征在于，所述晶圆由钽酸锂、铌酸锂以及石英中的任意一种材料制成。
  4. 如权利要求1所述的减少晶圆曝光驻波效应的制备方法，其特征在于，所述半导体薄膜由硅和锗中的至少一种材料制成，所述半导体薄膜的厚度为10nm～2μm。
  5. 如权利要求1所述的减少晶圆曝光驻波效应的制备方法，其特征在于，所述步骤S1中，所述减反射膜的镀制通过电子束蒸发的方法进行。
  6. 如权利要求1所述的减少晶圆曝光驻波效应的制备方法，其特征在于，所述步骤S2中，所述光刻胶的旋涂通过高速旋转机进行。
  7. 如权利要求1所述的减少晶圆曝光驻波效应的制备方法，其特征在于，所述步骤S3中，所述曝光使用DUV光源通过掩模版进行。
  8. 如权利要求2所述的减少晶圆曝光驻波效应的制备方法，其特征在于，所述步骤S23中，去除曝光后的所述晶圆的未曝光区域之前，先对曝光后的所述晶圆旋涂显影液后再进行。
  9. 如权利要求1所述的减少晶圆曝光驻波效应的制备方法，其特征在于，所述步骤S3中，所述光刻胶的剥离通过化学溶剂或等离子体氧化系统进行。
  10. 如权利要求1所述的减少晶圆曝光驻波效应的制备方法，其特征在于，所述步骤S4中，所述减反射膜的去除通过湿法腐蚀或干法刻蚀的方法进行：所述湿法腐蚀采用氢氟酸、硝酸以及水的混合溶液，或氢氟酸、硝酸以及醋酸的混合溶液，或四甲基氢氧化铵溶液，或氢氧化钾溶液进行。
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001337441A (ja) * 2000-03-24 2001-12-07 Toshiba Corp ホトマスク、ホトマスクブランク及び前記ホトマスクを用いた半導体ウェハの露光方法
US20020182514A1 (en) * 2001-05-03 2002-12-05 Applied Materials, Inc. Organic bottom antireflective coating for high performance mask making using optical imaging
TW200703894A (en) * 2005-07-15 2007-01-16 Tai Saw Technology Co Ltd Back-side ARC edposition and duel development for high frequency surface acoustic wave device fabrication
CN113726302A (zh) * 2021-07-28 2021-11-30 厦门市三安集成电路有限公司 一种声表面波滤波器的叉指换能器的制作方法
CN117148681A (zh) * 2023-06-16 2023-12-01 深圳飞骧科技股份有限公司 减少晶圆曝光驻波效应的制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08220360A (ja) * 1995-02-14 1996-08-30 Tdk Corp レジストパターニング方法
JP3489576B2 (ja) * 2001-01-12 2004-01-19 株式会社村田製作所 レジストパターンの形成方法、電極パターンの形成方法および弾性表面波装置の製造方法
JP4381121B2 (ja) * 2003-12-11 2009-12-09 大日本スクリーン製造株式会社 基板処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001337441A (ja) * 2000-03-24 2001-12-07 Toshiba Corp ホトマスク、ホトマスクブランク及び前記ホトマスクを用いた半導体ウェハの露光方法
US20020182514A1 (en) * 2001-05-03 2002-12-05 Applied Materials, Inc. Organic bottom antireflective coating for high performance mask making using optical imaging
TW200703894A (en) * 2005-07-15 2007-01-16 Tai Saw Technology Co Ltd Back-side ARC edposition and duel development for high frequency surface acoustic wave device fabrication
CN113726302A (zh) * 2021-07-28 2021-11-30 厦门市三安集成电路有限公司 一种声表面波滤波器的叉指换能器的制作方法
CN117148681A (zh) * 2023-06-16 2023-12-01 深圳飞骧科技股份有限公司 减少晶圆曝光驻波效应的制备方法

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