WO2024218894A1 - 加工装置、加工方法及び基板の製造方法 - Google Patents

加工装置、加工方法及び基板の製造方法 Download PDF

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Publication number
WO2024218894A1
WO2024218894A1 PCT/JP2023/015601 JP2023015601W WO2024218894A1 WO 2024218894 A1 WO2024218894 A1 WO 2024218894A1 JP 2023015601 W JP2023015601 W JP 2023015601W WO 2024218894 A1 WO2024218894 A1 WO 2024218894A1
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Prior art keywords
substrate
mask
processing
laser beam
area
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English (en)
French (fr)
Japanese (ja)
Inventor
義和 大谷
裕 山岡
昌実 倉田
健人 宇佐美
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Shin Etsu Engineering Co Ltd
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Shin Etsu Engineering Co Ltd
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Priority to CN202380097269.3A priority Critical patent/CN121057635A/zh
Priority to JP2025514953A priority patent/JPWO2024218894A1/ja
Priority to KR1020257038565A priority patent/KR20250168695A/ko
Priority to DE112023006225.0T priority patent/DE112023006225T5/de
Priority to PCT/JP2023/015601 priority patent/WO2024218894A1/ja
Priority to TW113114080A priority patent/TW202442364A/zh
Publication of WO2024218894A1 publication Critical patent/WO2024218894A1/ja
Anticipated expiration legal-status Critical
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1 ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/354—Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • B23K26/703—Cooling arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/42—Printed circuits
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials

Definitions

  • the present invention relates to a processing device, a processing method, and a method for manufacturing a substrate.
  • SoCs System on a Chip
  • trenches are formed in the substrate and wiring is formed along them in order to create through holes (VIAs) for connecting multiple layers of wiring, and to solve the problem of increased wiring resistance.
  • VIPs through holes
  • build-up film is laminated on both sides of the inner layer board (core layer) made of glass epoxy resin material using a dedicated vacuum laminator.
  • the surface of the build-up film thus obtained is processed to provide the above-mentioned through holes and trenches, and a metal layer is formed on it by plating to form electrodes.
  • Patent document 1 describes an invention related to a laser drilling method and device.
  • claim 1 of patent document 1 describes irradiating a linear or rectangular beam through a contact mask onto a processing area of a substrate to be processed using a contact mask method, and scanning the linear or rectangular beam across the contact mask.
  • Patent document 1, paragraph 0037 describes oscillating a laser oscillator and moving a linear beam in the L-axis direction using a scanning mechanism to irradiate the entire pattern of a contact mask.
  • this method does not allow processing that requires deep projections and recesses on a large substrate.
  • Patent document 1 paragraphs 0049 and 0050, describe a method of moving a rectangular beam using a two-axis scanning mechanism and irradiating each of the four divided regions of a contact mask in turn with the rectangular beam to drill holes in the processing region directly below each region.
  • this method although the inside of each processing region can be processed to a uniform depth, problems arise in terms of processing quality, such as no processing at the interface between each processing region, or over-processing at the interface to about twice the processing depth inside each processing area.
  • Patent document 2 describes an invention relating to a processing device and processing method for ablation processing.
  • the processing device for ablation processing described in claim 1 of patent document 2 is equipped with a scanning mechanism that moves a line beam forming section containing a line beam forming optical system relative to the device body and scans a line-shaped light.
  • the scanning mechanism 60 is capable of moving the line beam forming unit 20 back and forth along the scanning direction (X direction). As the line beam forming unit 20 moves, a line of light perpendicular to the scanning direction (X direction) moves relative to the mask M and projection optical system 30, scanning the mask M and substrate W fixed to the mask stage 40 and processing stage 50, respectively.”
  • paragraph 0026 of Patent Document 2 states, "The processing stage 50 can fix the substrate W by vacuum suction or the like, and can position the substrate W relative to the mask M by moving in the X-Y directions and rotating. It can also move in steps along the scanning direction (here, the X direction) so that ablation processing can be performed over the entire substrate W.”
  • Patent document 2 paragraph 0033 states that "the line beam forming unit 20 is moved relative to the device body 15 to scan the line-shaped light.”
  • Patent Document 2 does not allow processing that requires deep unevenness on a large substrate. Furthermore, because the laser beam is moved during scanning, it is difficult to irradiate the entire area of a large mask. For this reason, it is difficult to deal with larger substrate surfaces. Furthermore, the optical elements following the mask must be large in size, which makes distortions likely to occur and makes it unsuitable for high-precision processing. When using a reduced projection optical lens, it is necessary to use a very large-diameter lens, which not only increases distortion, but also makes the part very expensive and makes it difficult to manage heat generated by the laser beam, resulting in poor processing precision during long-term operation.
  • uneven processing of semiconductor substrates is uneven processing of the substrate surface by irradiating the substrate with a laser beam that has passed through an opening pattern in a mask, that is, uneven processing by ablation processing.
  • Ablation processing makes it possible to form not only through holes, but also trenches with high aspect ratios without penetrating the substrate.
  • a laser beam with uniform energy would be irradiated onto an area that covers the entire effective area of the mask, but in recent years, the processing area of the semiconductor substrate surface has become larger, and the effective area of the mask has become larger accordingly.
  • the energy density of the laser beam will be extremely reduced and will not reach the processing threshold energy of the substrate surface, making processing impossible.
  • the wall surface will have a blunt shape if the laser energy density is not high.
  • the laser beam energy required for ablation processing requires a much higher energy density than, for example, an exposure device, and heat must be taken into consideration.
  • ablation processing devices and ablation processing methods have been proposed, such as those described in Patent Documents 1 and 2, but as mentioned above, these were not technologies capable of precisely processing fine irregularities over the entire surface of the substrate to be processed.
  • the present invention has been made to solve the above problems, and aims to provide a processing device capable of precisely processing fine unevenness over the entire processed area of a substrate, a processing method capable of precisely processing fine unevenness over the entire processed area of a substrate, and a manufacturing method for a substrate capable of manufacturing a substrate on which fine unevenness is precisely formed over the entire processed area of the substrate.
  • the present invention provides a processing apparatus according to a first aspect, which is an apparatus for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, comprising: A first optical function unit including a laser light source that irradiates the laser beam in a pulsed manner and a shaping optical system that shapes the irradiation shape of the laser beam from the laser light source into a rectangular shape; A second optical function unit including a mask having an effective area having a pattern corresponding to a processing area of the substrate; a substrate stage for holding the substrate; Including, the mask includes a mask irradiation area on which the laser beam having passed through the first optical function portion is irradiated, the mask irradiation area being a portion of the effective area of the mask; the substrate includes a substrate illumination area onto which the pattern is projected by the laser beam through the mask; The substrate irradiation area is smaller than a processing area of the substrate, A processing device is provided
  • processing equipment does not require the use of high laser energy, and can be constructed inexpensively without using expensive laser light sources or optical components. It is also possible to suppress deterioration of accuracy due to thermal drift of the laser beam, enabling high-precision processing.
  • the substrate irradiation area in one shot can be made small, making high-density irradiation possible.
  • the present invention also provides a processing apparatus according to a second aspect, which is an apparatus for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, comprising: A first optical function unit including a laser light source that irradiates the laser beam in a pulsed manner and a shaping optical system that shapes the irradiation shape of the laser beam from the laser light source into a rectangular shape; A second optical function unit including a mask having an effective area having a pattern corresponding to a processing area of the substrate; a substrate stage for holding the substrate; Including, the mask includes a mask irradiation area on which the laser beam having passed through the first optical function portion is irradiated, the mask irradiation area being a portion of the effective area of the mask; the substrate includes a substrate illumination area onto which the pattern is projected by the laser beam through the mask; The substrate irradiation area is smaller than a processing area of the substrate, the mask and the substrate stage are configured to maintain
  • such processing equipment does not require the use of high laser energy, and can be constructed inexpensively without using expensive laser light sources or optical components. It is also possible to suppress deterioration of accuracy due to thermal drift of the laser beam, and to perform high-precision processing. In addition, because small optical components can be used, inexpensive, high-precision components can be used.
  • processing can be performed with greater precision than when a laser beam is scanned.
  • a large-area mask can be used, and the irradiation energy density in the processed area of the substrate can be increased relative to the irradiation energy of the mask area, making it possible to perform processing with a higher energy density.
  • the mask and the substrate stage are configured to maintain a relative corresponding positional relationship by synchronously operating in a planar direction substantially perpendicular to a direction in which the laser beam is irradiated.
  • the mask and the substrate stage are operated in synchronization with each other while keeping the irradiation position of the laser beam fixed, and the mask and the substrate stage are swept and irradiated while overlapping a portion of the substrate irradiation area, thereby performing surface unevenness processing of the processed area of the substrate.
  • This type of processing equipment can perform processing with higher precision than when scanning a laser beam.
  • this type of processing equipment can also use a large-area mask, which makes it possible to increase the irradiation energy density in the processed area of the substrate relative to the irradiation energy of the mask area, thereby enabling processing to be performed with a higher energy density.
  • the laser beam is preferably an excimer laser.
  • the system further includes a mask stage that holds the mask and sweeps the mask.
  • a processing device that includes such a mask stage can perform efficient mask sweeping operations.
  • the shaping optical system is preferably an optical system that includes a plurality of cylindrical lenses and shapes the laser beam from the laser light source into a laser beam whose irradiation shape is the rectangular shape and whose irradiation energy density is uniform.
  • a processing device including such an optical system is capable of shaping a high-quality laser beam with a rectangular beam profile that has extremely uniform energy density.
  • the shaping optical system is preferably an optical system that includes a plurality of cylindrical lenses and shapes the laser beam from the laser light source into a laser beam whose irradiation shape is the rectangular shape and a top hat shape.
  • a processing device including such an optical system can irradiate the processing area of the substrate with a top-hat shaped laser beam, which has a rectangular shape with extremely uniform energy density.
  • the second optical function unit can be configured to further shape the irradiation shape of the laser beam that has passed through the first optical function unit through the mask.
  • the second optical function unit can further shape the irradiation shape of the rectangular laser beam, for example, according to a pattern corresponding to the processed area of the substrate.
  • the mask and the substrate stage are swept non-stop while the laser beam is irradiated in pulses onto the mask and the substrate stage.
  • An imaging means for reading a characteristic portion of the substrate an imaging means for reading a characteristic portion of the mask; It is preferable that the apparatus further includes an alignment mechanism that aligns the relative positions of the substrate and the mask based on position information of the characteristic portions of the substrate and the characteristic portions of the mask.
  • the system further includes a means for correcting the processed shape of the substrate relative to the pattern of the mask based on information from the alignment mechanism.
  • This type of processing equipment allows for more accurate processing of uneven surfaces on substrates.
  • the mask is installed in a direction approximately perpendicular to the horizontal surface on which the processing device is installed.
  • this type of processing equipment can reduce the effects of mask bending, allowing for highly accurate uneven processing, and it is also less likely for dirt to adhere to the mask surface, making it less likely for defects to occur due to dirt. Furthermore, because most of the long optical path can be aligned along a horizontal surface, the height of the equipment can be reduced.
  • the substrate may have a resist film on its surface that is to be processed.
  • the object to be processed by the processing device of the present invention is not particularly limited, but can be, for example, a resist film formed on a substrate.
  • the dimensions of the mask in the vertical and horizontal directions perpendicular to the thickness direction may be 700 mm or more.
  • the processing device of the present invention may be equipped with a large mask, for example, with dimensions in the vertical and horizontal directions perpendicular to the thickness direction of 700 mm or more.
  • the dimensions of the effective area of the mask in the vertical and horizontal directions perpendicular to the thickness direction may be 500 mm or more.
  • the processing device of the present invention may be equipped with a large mask, for example, in which the dimensions of the effective area in the vertical and horizontal directions perpendicular to the thickness direction are 500 mm or more.
  • a processing device including such a detachable first unit and second unit can be easily divided and transported, reducing installation costs.
  • the device further includes a vertical mask changer configured to exchange a plurality of the masks.
  • a processing device further equipped with such a vertical mask changer can easily form various patterns.
  • multiple masks can be replaced while maintaining the vertical arrangement, it is possible to prevent the accumulation of dust and other foreign matter on the mask and the mask from bending during mask replacement.
  • the device further includes a third optical function unit equipped with a reduction projection optical system between the second optical function unit and the substrate stage.
  • the mask can be enlarged beyond the actual processing pattern, and the energy of the laser beam irradiated onto the mask can be made smaller than the processing energy irradiated onto the substrate. This makes it possible to suppress thermal drift due to the energy of the laser beam, thereby suppressing thermal expansion of the mask and enabling high-precision processing even after a long period of processing operation.
  • the mask can be made into a pattern larger than the actual processing pattern, it is less susceptible to the effects of minute particles. This also has the effect of extending the life of the mask.
  • the density of the processing energy irradiated onto the substrate can be improved, processing can be performed with a deep processing depth and a high aspect ratio.
  • the third optical function unit further includes a cooling means for cooling the reduction projection optical system.
  • this type of processing method does not require the use of high laser energy, and can be constructed inexpensively without using expensive laser light sources or optical components. It also prevents deterioration of accuracy due to thermal drift of the laser beam, allowing for high-precision processing.
  • This type of processing method allows for high-speed and deep VIA processing and/or trench processing.
  • the area of the substrate irradiated with one shot can be made small, making high-density irradiation possible.
  • a processing method which is a processing method for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, comprising the steps of: A laser beam shaped into a rectangular shape is passed through a mask to irradiate the substrate with the laser beam so that a substrate irradiation area is smaller than a processing area of the substrate;
  • the present invention provides a processing method for performing surface unevenness processing on a processing area of a substrate while overlapping a part of the substrate irradiation area during a processing operation on the substrate.
  • This type of processing method makes it possible to perform nearly uniform uneven processing over the entire processing area of the substrate with high precision. Therefore, with this type of processing device, it is possible to perform fine uneven processing over the entire processing area of the substrate with high precision.
  • the present invention provides a processing method according to a third aspect, which is a processing method for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, comprising the steps of: Preparing a processing apparatus including a first optical functional unit having a laser light source and a shaping optical system, a second optical functional unit having a mask including an effective area having a pattern corresponding to a processing region of the substrate, and a substrate stage for holding the substrate;
  • the laser beam is irradiated in a pulsed manner from the laser light source to the shaping optical system to shape the irradiation shape of the laser beam into a rectangular shape; irradiating a mask irradiation area, which is a part of the effective area of the mask, with the laser beam that has passed through the first optical function unit in the second optical function unit; and projecting the pattern onto a substrate illumination area of the substrate with the laser beam that has passed through the mask;
  • the substrate i
  • this type of processing method does not require the use of high laser energy, and the laser light source and optical components used can be constructed inexpensively without using expensive materials. In addition, deterioration of accuracy due to thermal drift of the laser beam can be suppressed, and high-precision processing can be performed. In addition, because small optical components can be used, inexpensive and high-precision components can be used.
  • processing can be performed with higher precision than when scanning a laser beam. Also, with this type of processing method, it is possible to use a large-area mask, so processing can be performed with a higher energy density.
  • the mask and the substrate stage are synchronously moved in a planar direction substantially perpendicular to a direction in which the laser beam is irradiated, thereby maintaining a relative corresponding positional relationship;
  • it is preferable to fix the irradiation position of the laser beam operate the mask and the substrate stage in synchronization, and sweep-irradiate the mask and the substrate stage while overlapping a portion of the substrate irradiation area, thereby performing surface unevenness processing on the processed area of the substrate.
  • This type of processing method allows for processing with greater precision than scanning a laser beam.
  • this type of processing method can also be used with a large-area mask, which increases the irradiation energy density in the processed area of the substrate relative to the irradiation energy of the mask area, making it possible to process with a higher energy density.
  • a mask stage that holds the mask and sweeps the mask.
  • a processing device that further includes a third optical function unit equipped with a reduction projection optical system between the second optical function unit and the substrate stage.
  • the mask can be enlarged to be larger than the actual processing pattern, and as a result, the energy of the laser beam irradiated to the mask can be made smaller than the processing energy irradiated to the substrate. This makes it possible to suppress thermal drift due to the energy of the laser beam, thereby suppressing thermal expansion of the mask and enabling high-precision processing even after long-term processing operations.
  • the mask can be made to have a pattern larger than the actual processing pattern, it is less susceptible to the effects of minute particles. This also has the effect of extending the life of the mask.
  • the density of the processing energy irradiated to the substrate can be improved, processing can be performed with a deep processing depth and a high aspect ratio.
  • a third optical function unit that further includes a cooling means for cooling the reduction projection optical system.
  • Projection lenses with an effective diameter of 150 mm or less have the advantage of easy thermal management and little distortion. Furthermore, the use of such projection lenses can contribute to cost reduction.
  • the processing method of the present invention is capable of precisely processing uneven surfaces that are almost uniform across the entire processing area of the substrate, even when using a projection lens with an effective diameter of 150 mm or less.
  • the processing method of the first or third aspect it is preferable to use an optical system equipped with a plurality of cylindrical lenses as the shaping optical system, and to shape the laser beam from the laser light source into a uniform laser beam having the rectangular irradiation shape.
  • the irradiation shape of the laser beam that has passed through the first optical function unit can be further shaped through the mask in the second optical function unit.
  • the second optical function unit can further shape the irradiation shape of the rectangular laser beam, for example, according to a pattern corresponding to the processed area of the substrate.
  • the sweep irradiation in at least one direction it is preferable to sweep the mask and the substrate stage non-stop while irradiating the mask and the substrate stage with the laser beam in pulses.
  • the stage does not move and stop repeatedly as frequently as in step-and-repeat, the heat load on the stage is reduced and highly accurate positioning can be maintained for long periods of time.
  • the sweep irradiation can be repeated multiple times for each processed region of the substrate.
  • the method includes reading a feature of the substrate and a feature of the mask; It is preferable that the method further includes aligning the relative positions of the substrate and the mask using an alignment mechanism based on position information of the characteristic portions of the substrate and the characteristic portions of the mask.
  • the method further includes correcting the processed shape of the substrate relative to the pattern of the mask based on information from the alignment mechanism.
  • This type of processing method allows for more accurate processing of uneven surfaces on the substrate.
  • the processing method of the first or third aspect it is preferable to use a processing device in which the mask is installed perpendicular to the horizontal surface on which the processing device is installed.
  • this type of processing equipment can reduce the effects of mask bending, allowing for highly accurate uneven processing, and it is also less likely for dirt to adhere to the mask surface, making it less likely for defects to occur due to dirt. Furthermore, because most of the long optical path can be aligned along a horizontal surface, the height of the equipment can be reduced.
  • the substrate may have a resist film on its surface that is the object to be processed.
  • the object to be processed is not particularly limited, but for example, a resist film formed on a substrate can be the object to be processed.
  • the mask may have dimensions of 700 mm or more in the vertical and horizontal directions perpendicular to the thickness direction.
  • a large mask in any of the first to third aspects, can be used, for example, with dimensions in the vertical and horizontal directions perpendicular to the thickness direction of 700 mm or more.
  • the mask may have vertical and horizontal dimensions perpendicular to the thickness direction of the effective area of 500 mm or more.
  • a large mask can be used, for example, in which the dimensions of the effective area in the vertical and horizontal directions perpendicular to the thickness direction are 500 mm or more.
  • the processing apparatus includes: A first unit including the first optical function portion; It is preferable to use a second unit that is detachable from the first unit and includes the second optical function section and the substrate stage.
  • Such processing equipment can be easily divided and transported, and the use of such processing equipment can reduce installation costs.
  • a processing device further including a vertical mask changer configured to exchange the multiple masks.
  • the fine irregularities can be irregularities including multiple trenches.
  • the processing method of the present invention makes it possible to form irregularities including multiple trenches.
  • the multiple trenches may be formed to have a cross section in which the distance between the bottoms of adjacent trenches is 110% or more of the average width of the bottoms.
  • the plurality of trenches may be formed so that the depth is 20 ⁇ m or less and the ratio of the depth to the average width of the bottom in the cross section is 1.0 or more.
  • the multiple trenches can be formed such that the average width of the bottom of the cross section of the trench is 70% or more of the width of the opening at the surface of the substrate.
  • the multiple trenches can be formed such that the width of the opening on the surface of the substrate is 20 ⁇ m or less.
  • the multiple trenches may be formed such that the ratio of the depth to the average width of the bottom in the cross section is 1.1 or greater.
  • the multiple trenches may be formed such that the ratio of the depth to the average width of the bottom in the cross section is 1.5 or more.
  • the multiple trenches may be formed such that the ratio of the depth to the average width of the bottom in the cross section is 2.4 or greater.
  • the multiple trenches may be formed such that the ratio of the depth to the average width of the bottom in the cross section is 3.4 or more.
  • the fine irregularities can be formed to further include a plurality of through holes.
  • a portion of the plurality of trenches can also be formed between adjacent ones of the plurality of through holes.
  • the portion of the plurality of trenches may be formed to be 40% or more of the width between the adjacent through holes.
  • the processing method of the present invention can form a variety of irregularities.
  • the present invention provides a method for manufacturing a substrate according to a first aspect, which is a method for manufacturing a substrate having fine irregularities formed on a surface thereof by ablation processing using irradiation energy of a laser beam, comprising the steps of: Preparing a processing apparatus including a first optical functional unit having a laser light source and a shaping optical system, a second optical functional unit having a mask including an effective area having a pattern corresponding to a processing region of the substrate, and a substrate stage for holding the substrate;
  • the laser beam is irradiated in a pulsed manner from the laser light source to the shaping optical system to shape the irradiation shape of the laser beam into a rectangular shape; irradiating a mask irradiation area, which is a part of the effective area of the mask, with the laser beam that has passed through the first optical function unit in the second optical function unit; and projecting the pattern onto a substrate illumination area of the substrate with the laser beam that has passed through the mask;
  • This type of substrate manufacturing method makes it possible to precisely perform uniform uneven processing across the substrate's processing area. Therefore, this type of substrate manufacturing method makes it possible to manufacture a substrate on which fine uneven processing is precisely formed across the substrate's processing area.
  • this type of substrate manufacturing method does not require the use of high laser energy, and can be constructed inexpensively without using expensive laser light sources or optical components. It also prevents deterioration of accuracy due to thermal drift of the laser beam, making it possible to manufacture substrates that have been processed with high precision.
  • the substrate manufacturing method deep VIA processing and/or trench processing can be performed at high speed.
  • the substrate irradiation area in one shot can be made small, making high-density irradiation possible.
  • the present invention provides a method for producing a substrate according to a second aspect, which is a method for producing a substrate having fine irregularities formed on a surface thereof by ablation processing using irradiation energy of a laser beam, comprising the steps of: A processing method for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, comprising the steps of: A laser beam shaped into a rectangular shape is passed through a mask to irradiate the substrate with the laser beam so that a substrate irradiation area is smaller than a processing area of the substrate;
  • the present invention provides a method for manufacturing a substrate, in which, during a processing operation on the substrate, surface unevenness processing is performed on a processing region of the substrate while overlapping a portion of the substrate irradiation area.
  • This type of substrate manufacturing method makes it possible to precisely perform uniform uneven processing across the substrate's processing area. Therefore, this type of substrate manufacturing method makes it possible to manufacture a substrate on which fine uneven processing is precisely formed across the substrate's processing area.
  • the present invention provides a third aspect of a method for producing a substrate, which is a method for producing a substrate having fine irregularities formed on a surface thereof by ablation processing using irradiation energy of a laser beam, comprising the steps of: Preparing a processing apparatus including a first optical functional unit having a laser light source and a shaping optical system, a second optical functional unit having a mask including an effective area having a pattern corresponding to a processing region of the substrate, and a substrate stage for holding the substrate;
  • the laser beam is irradiated in a pulsed manner from the laser light source to the shaping optical system to shape the irradiation shape of the laser beam into a rectangular shape; irradiating a mask irradiation area, which is a part of the effective area of the mask, with the laser beam that has passed through the first optical function unit in the second optical function unit; and projecting the pattern onto a substrate illumination area of the substrate with the laser beam that has passed through the mask;
  • This type of substrate manufacturing method makes it possible to precisely perform uniform uneven processing across the substrate's processing area. Therefore, this type of substrate manufacturing method makes it possible to manufacture a substrate on which fine uneven processing is precisely formed across the substrate's processing area.
  • this type of substrate manufacturing method does not require the use of high laser energy, and can be constructed inexpensively without using expensive laser light sources or optical components. It is also possible to suppress deterioration of accuracy due to thermal drift of the laser beam, making it possible to manufacture substrates that have been processed with high precision. In addition, because small optical components can be used, inexpensive, high-precision components can be used.
  • This method of manufacturing a substrate allows for processing with greater precision than scanning a laser beam.
  • this processing method also allows for the use of a large-area mask, which increases the irradiation energy density in the processed area of the substrate relative to the irradiation energy of the masked area, allowing for processing with a higher energy density.
  • the substrate may be a substrate for a semiconductor package.
  • the substrate manufacturing method of the present invention can be particularly advantageously applied to the manufacture of semiconductor packages.
  • a substrate having a resist film on its surface which is the object to be processed, can be used.
  • the object to be processed is not particularly limited, but for example, a resist film formed on a substrate can be the object to be processed.
  • the mask may have dimensions of 700 mm or more in the vertical and horizontal directions perpendicular to the thickness direction.
  • a large mask can be used, for example, with dimensions in the vertical and horizontal directions perpendicular to the thickness direction of 700 mm or more.
  • the mask may have vertical and horizontal dimensions perpendicular to the thickness direction of the effective area of 500 mm or more.
  • a large mask can be used, for example, in which the dimensions of the effective area in the vertical and horizontal directions perpendicular to the thickness direction are 500 mm or more.
  • the processing apparatus includes: A first unit including the first optical function portion; It is preferable to use a second unit that is detachable from the first unit and includes the second optical function section and the substrate stage.
  • Such processing equipment can be easily divided and transported, and the use of such processing equipment can reduce installation costs.
  • a processing device further including a vertical mask changer configured to exchange the multiple masks.
  • a processing device further equipped with such a vertical mask changer can easily form various patterns.
  • multiple masks can be replaced while maintaining the vertical arrangement, it is possible to prevent the accumulation of dust and other foreign matter on the mask and the mask from bending during mask replacement.
  • the fine irregularities can be irregularities including multiple trenches.
  • the substrate manufacturing method of the present invention makes it possible to form irregularities including multiple trenches.
  • the multiple trenches may be formed to have a cross section in which the distance between the bottoms of adjacent trenches is 110% or more of the average width of the bottoms.
  • the plurality of trenches may be formed so that the depth is 20 ⁇ m or less and the ratio of the depth to the average width of the bottom in the cross section is 1.0 or more.
  • the multiple trenches can be formed such that the average width of the bottom of the cross section of the trench is 70% or more of the width of the opening at the surface of the substrate.
  • the multiple trenches can be formed such that the width of the opening on the surface of the substrate is 20 ⁇ m or less.
  • the multiple trenches may be formed such that the ratio of the depth to the average width of the bottom in the cross section is 1.1 or greater.
  • the multiple trenches may be formed such that the ratio of the depth to the average width of the bottom in the cross section is 1.5 or more.
  • the multiple trenches may be formed such that the ratio of the depth to the average width of the bottom in the cross section is 2.4 or greater.
  • the multiple trenches may be formed such that the ratio of the depth to the average width of the bottom in the cross section is 3.4 or more.
  • the fine irregularities can be formed to further include a plurality of through holes.
  • a portion of the plurality of trenches can be formed between adjacent ones of the plurality of through holes.
  • the portion of the plurality of trenches may be formed to be 40% or more of the width between the adjacent through holes.
  • the substrate manufacturing method of the present invention makes it possible to manufacture substrates with various irregularities on their surfaces.
  • the processing device of the present invention can perform fine uneven processing with high precision across the entire processing area of the substrate.
  • the processing method of the present invention allows for precise processing of minute irregularities across the entire processing area of the substrate.
  • the substrate manufacturing method of the present invention makes it possible to manufacture a substrate on which fine uneven processing is precisely formed throughout the processed area of the substrate.
  • FIG. 1 is a schematic diagram showing an example of a processing apparatus of the present invention.
  • 1 is a diagram showing an example of a relationship between a processed region of a substrate and a substrate irradiation area in the present invention.
  • FIG. 13 is a diagram illustrating an example of overlapping irradiation in one axial direction.
  • FIG. 13 is a diagram illustrating an example of overlapping irradiation from the first row to the third row.
  • 1 is a conceptual diagram of shaping the irradiation shape of a laser beam in an example of a shaping optical system.
  • 1 is a schematic perspective view of an example of a substrate to be processed;
  • FIG. 2 is a schematic diagram showing an example of a mask.
  • FIG. 2 is a schematic diagram showing an example of a processing device including a first unit and a second unit.
  • FIG. 2 is a schematic diagram for explaining an example of a vertical mask changer.
  • 1 is a schematic diagram of a cassette storage device that may be equipped with an example of a vertical mask changer.
  • FIG. 1 is a schematic perspective view showing an example of a reduction projection optical system.
  • FIG. 2 is a schematic cross-sectional view showing an example of fine projections and recesses that can be formed by the present invention.
  • FIG. 4 is a schematic cross-sectional view showing another example of fine irregularities that can be formed by the present invention.
  • the substrate irradiation area irradiated with the laser beam in one shot is made smaller than the processed region of the substrate, and during processing of the substrate, the mask and substrate stage are irradiated in a sweeping manner while overlapping a portion of the substrate irradiation area, thereby processing the surface irregularities of the processed region of the substrate, and/or the mask and substrate stage are operated in synchronization with a fixed irradiation position of the laser beam, and the mask and substrate stage are irradiated in a sweeping manner to process the surface irregularities of the processed region of the substrate, thereby enabling precise processing of fine irregularities over the entire processed region of the substrate, and have completed the present invention.
  • the processing apparatus is a processing apparatus for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam
  • a first optical function unit including a laser light source that irradiates the laser beam in a pulsed manner and a shaping optical system that shapes the irradiation shape of the laser beam from the laser light source into a rectangular shape
  • a second optical function unit including a mask having an effective area having a pattern corresponding to a processing area of the substrate; a substrate stage for holding the substrate; Including, the mask includes a mask irradiation area on which the laser beam having passed through the first optical function portion is irradiated, the mask irradiation area being a portion of the effective area of the mask;
  • the substrate includes a substrate illumination area onto which the pattern is projected by the laser beam through the mask;
  • the substrate irradiation area is smaller than a processing area of the substrate,
  • This processing apparatus is configured to, during processing operations on the substrate, sweep
  • a processing apparatus is an apparatus for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, comprising: A first optical function unit including a laser light source that irradiates the laser beam in a pulsed manner and a shaping optical system that shapes the irradiation shape of the laser beam from the laser light source into a rectangular shape; A second optical function unit including a mask having an effective area having a pattern corresponding to a processing area of the substrate; a substrate stage for holding the substrate; Including, the mask includes a mask irradiation area on which the laser beam having passed through the first optical function portion is irradiated, the mask irradiation area being a portion of the effective area of the mask; the substrate includes a substrate illumination area onto which the pattern is projected by the laser beam through the mask; The substrate irradiation area is smaller than a processing area of the substrate, the mask and the substrate stage are configured to maintain a relative corresponding position
  • a processing method is a processing method for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, the method comprising the steps of: Preparing a processing apparatus including a first optical functional unit having a laser light source and a shaping optical system, a second optical functional unit having a mask including an effective area having a pattern corresponding to a processing region of the substrate, and a substrate stage for holding the substrate;
  • the laser beam is irradiated in a pulsed manner from the laser light source to the shaping optical system to shape the irradiation shape of the laser beam into a rectangular shape; irradiating a mask irradiation area, which is a part of the effective area of the mask, with the laser beam that has passed through the first optical function unit in the second optical function unit; and projecting the pattern onto a substrate illumination area of the substrate with the laser beam that has passed through the mask;
  • a processing method is a processing method for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, the method comprising the steps of: A laser beam shaped into a rectangular shape is passed through a mask to irradiate the substrate with the laser beam so that a substrate irradiation area is smaller than a processing area of the substrate; This is a processing method in which, during a processing operation on the substrate, surface unevenness processing is performed on a processing area of the substrate while overlapping a part of the substrate irradiation area.
  • a processing method is a processing method for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, the method comprising the steps of: Preparing a processing apparatus including a first optical functional unit having a laser light source and a shaping optical system, a second optical functional unit having a mask including an effective area having a pattern corresponding to a processing region of the substrate, and a substrate stage for holding the substrate; In the first optical function unit, the laser beam is irradiated in a pulsed manner from the laser light source to the shaping optical system to shape the irradiation shape of the laser beam into a rectangular shape; irradiating a mask irradiation area, which is a part of the effective area of the mask, with the laser beam that has passed through the first optical function unit in the second optical function unit; and projecting the pattern onto a substrate illumination area of the substrate with the laser beam that has passed through the mask;
  • a first aspect of the present invention provides a method for producing a substrate having fine irregularities formed on a surface thereof by ablation processing using irradiation energy of a laser beam, the method comprising the steps of: Preparing a processing apparatus including a first optical functional unit having a laser light source and a shaping optical system, a second optical functional unit having a mask including an effective area having a pattern corresponding to a processing region of the substrate, and a substrate stage for holding the substrate;
  • the laser beam is irradiated in a pulsed manner from the laser light source to the shaping optical system to shape the irradiation shape of the laser beam into a rectangular shape; irradiating a mask irradiation area, which is a part of the effective area of the mask, with the laser beam that has passed through the first optical function unit in the second optical function unit; and projecting the pattern onto a substrate illumination area of the substrate with the laser beam that has passed through the mask;
  • the substrate irradiation area is made smaller than a
  • a second aspect of the present invention provides a method for producing a substrate having fine irregularities formed on a surface thereof by ablation processing using irradiation energy of a laser beam, the method comprising the steps of: A processing method for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, comprising the steps of: A laser beam shaped into a rectangular shape is passed through a mask to irradiate the substrate with the laser beam so that a substrate irradiation area is smaller than a processing area of the substrate; This is a method for manufacturing a substrate, in which, during a processing operation on the substrate, surface unevenness processing is performed on a processing area of the substrate while overlapping a portion of the substrate irradiation area.
  • a third aspect of the present invention provides a method for producing a substrate having fine irregularities formed on a surface thereof by ablation processing using irradiation energy of a laser beam, the method comprising the steps of: Preparing a processing apparatus including a first optical functional unit having a laser light source and a shaping optical system, a second optical functional unit having a mask including an effective area having a pattern corresponding to a processing region of the substrate, and a substrate stage for holding the substrate; In the first optical function unit, the laser beam is irradiated in a pulsed manner from the laser light source to the shaping optical system to shape the irradiation shape of the laser beam into a rectangular shape; irradiating a mask irradiation area, which is a part of the effective area of the mask, with the laser beam that has passed through the first optical function unit in the second optical function unit; and projecting the pattern onto a substrate illumination area of the substrate with the laser beam that has passed through the mask;
  • the substrate irradiation area is made smaller
  • FIG. 1 is a schematic diagram showing an example of a processing apparatus of the present invention.
  • the processing apparatus 100 shown in Fig. 1 is a processing apparatus for forming fine irregularities on the surface of a substrate 80 by ablation processing using irradiation energy of a laser beam 4.
  • the processing device 100 shown in FIG. 1 includes a first optical function unit 10, a second optical function unit 20, and a substrate stage 40 that holds a substrate 80.
  • the first optical function unit 10 includes a laser light source (laser oscillator) 11 that irradiates (emits) a laser beam 1 in a pulsed manner, and a shaping optical system 12 to which the laser beam 1 is irradiated from the laser light source 11.
  • the shaping optical system 12 shapes the irradiation shape of the laser beam 1, for example, as shown in FIG. 1(a), into a rectangular irradiation shape, for example, as shown in FIG. 1(b).
  • the laser beam 2 having a rectangular irradiation shape can exhibit a uniform irradiation energy density, and is a beam profile that exhibits, for example, a top hat shape.
  • the second optical function unit 20 includes a mask 21.
  • the mask 21 includes an effective area 22 having a pattern corresponding to the region to be processed of the substrate 80.
  • the mask 21 includes a mask irradiation area onto which the laser beam 2 that has passed through the first optical function unit 10 is irradiated. This mask irradiation area is a part of the effective area 22 of the mask 21.
  • the processing device 100 shown in FIG. 1 is configured so that the laser beam 4 emitted from the third optical function unit 30 is irradiated onto a portion of the substrate 80 held by the substrate stage 40.
  • the substrate 80 includes a substrate illumination area onto which a pattern is projected by the laser beam passing through the mask 21 (and optional third optical function portion 30).
  • FIG. 2 shows an example of the relationship between a substrate irradiation area 90 where the laser beam 4 is irradiated on the substrate 80 and a processed region 81 on the substrate 80. As shown in FIG. 2, the substrate irradiation area 90 is smaller than the processed region 81 on the substrate 80.
  • the substrate irradiation area 90 shown in FIG. 2 is an area irradiated by one shot of the pulsed laser beam 4.
  • the substrate irradiation area 90 corresponds to the mask irradiation area, which is a part of the effective area 22 of the mask 21, since the pattern is projected by the laser beam that has passed through the mask 21.
  • the mask 21 is configured to be scanned along the sweep axes 21X and 21Y shown in FIG. 1.
  • the substrate stage 40 is configured to be scanned along the sweep axes 80X and 80Y shown in FIG. 1.
  • the processing device 100 of the present invention is configured to sweep and irradiate the mask 21 and the substrate stage 40 with the laser beam 4, and perform surface unevenness processing of the processing area 81 of the substrate 80.
  • the processing device 100 of the present invention is configured to perform overlapping irradiation (first embodiment) and/or to perform synchronous sweep irradiation with the laser beam irradiation position fixed (second embodiment), as described in detail below.
  • the processing apparatus 100 of the first embodiment is configured to perform sweep irradiation of the mask 20 and the substrate stage 80 while overlapping a portion of the substrate irradiation area 90 during processing operation on the substrate 80, thereby performing surface unevenness processing of the processed region 81 of the substrate 80.
  • irradiating the laser beam while overlapping a portion of the substrate irradiation area 90 is referred to as overlapping irradiation.
  • Figure 3(a) shows a substrate irradiation area 90 on a substrate 80 by one shot of a pulsed laser beam.
  • the mask 20 and substrate stage 80 are swept, and the laser beam is irradiated so that the substrate irradiation area 91 of the first shot and the substrate irradiation area 92 of the second shot partially overlap in the direction of the arrow along the sweep axis 80X, as shown in Figure 3(b).
  • the laser beam is irradiated so that the substrate irradiation area 93 of the third shot partially overlaps with the substrate irradiation area 91 of the first shot and the substrate irradiation area 92 of the second shot.
  • the processing area expands along the sweep axis 80X.
  • FIG. 4(a) shows the process of ablation processing the first row of the processing area 81 along the sweep axis 80X by the overlapping irradiation shown in FIG. 3(b).
  • overlapping irradiation is performed along the sweep axis 80X so as to overlap a part of the area where overlapping irradiation was performed in FIG. 4(a) in the direction of the sweep axis 80Y (orthogonal to the sweep axis 80X), and the second row of the processing area 81 is ablated along the sweep axis 80X.
  • FIG. 4(b) shows the process of ablation processing the first row of the processing area 81 along the sweep axis 80X by the overlapping irradiation shown in FIG. 3(b).
  • overlapping irradiation is performed along the sweep axis 80X so as to overlap a part of the area where overlapping irradiation was performed in FIG. 4(a) and (b) in the direction of the sweep axis 80Y, and the third row of the processing area 81 is ablated along the sweep axis 80X.
  • the processing area spreads over the processing area 81.
  • overlapping irradiation can be performed at regular intervals in the two directions of the sweep axes 80X and 80Y.
  • the overlapping portions of the substrate irradiation area are irradiated with the laser beam multiple times.
  • the portions are subjected to deep ablation processing according to the mask pattern shape, and the desired processing depth according to the mask pattern shape required for the processed area 81 can be achieved.
  • a laser beam 4 which is a pulsed, rectangular laser beam with a uniform irradiation energy density and converted into a processing shape through a mask 21, is irradiated onto a substrate irradiation area 90 of a substrate 80. Therefore, the processing depth of the substrate irradiation area 90 in the substrate 80 corresponding to the mask irradiation area, which is a part of the effective area 22 of the mask 21, can be uniformized and irradiation can be performed multiple times, making it possible to precisely perform processing of almost uniform unevenness over the processed area 81 of the substrate 80. Therefore, with this processing device 100, fine unevenness processing can be precisely performed over the processed area 81 of the substrate 80.
  • such a processing device 100 does not require the use of high laser energy, and can be constructed inexpensively without using expensive laser light sources or optical components.
  • deterioration of accuracy due to thermal drift of the laser beam can be suppressed, allowing for high-precision processing.
  • the processing device 100 can irradiate the substrate with the laser beam 4 in a pulsed manner, so the above-mentioned overlapping irradiation can be performed at high speed.
  • the processing apparatus 100 can perform high-speed and deep VIA processing and/or trench processing.
  • the processing apparatus 100 according to the first aspect of the present invention, overlapping irradiation is performed, so the substrate irradiation area in one shot can be made smaller. As a result, high-density irradiation is possible.
  • the processing apparatus 100 of the second embodiment is configured such that the mask 21 and the substrate stage 40 maintain a relative corresponding positional relationship by operating synchronously in a planar direction approximately perpendicular to the direction in which the laser beams 2 and 4 are irradiated.
  • the mask 21 is configured such that the movement of the mask 21 along the sweep axis 21X is synchronized with the movement of the substrate stage 80 along the sweep axis 80X, and the movement of the mask 21 along the sweep axis 21Y is synchronized with the movement of the substrate stage 80 along the sweep axis 80Y, so that the mask 21 and the substrate stage 40 maintain a relative corresponding positional relationship.
  • the processing device 100 of the second embodiment is configured to, during processing of the substrate 80, operate the mask 21 and the substrate stage 40 in synchronization with a fixed irradiation position of the laser beam 4, sweep-irradiate the mask 21 and the substrate stage 40, and perform surface unevenness processing of the processed area 81 of the substrate 80 while fixing the irradiation position of the laser beam 4.
  • sweep irradiation that can be performed by the processing device 100 of the second embodiment is referred to as "synchronous sweep irradiation with a fixed irradiation position of the laser beam.”
  • Such synchronous sweep irradiation allows processing to be performed with higher precision than when scanning a laser beam. Furthermore, with such a processing device 100, a large-area mask can be used as the mask 21, and processing can be performed with a higher energy density by using the large-area mask in combination with the third optical function unit 30, which will be described later.
  • the laser beam 4 which is a pulsed and rectangular laser beam with a uniform irradiation energy density and converted into a processing shape through the mask 21, is irradiated onto the substrate irradiation area 90 of the substrate 80. Therefore, as in the first aspect, in the processing device 100 of the second aspect, multiple irradiations can be performed with a uniform processing depth of the substrate irradiation area 90 in the substrate 80 corresponding to the mask irradiation area, which is a part of the effective area 22 of the mask 21, and it is possible to precisely perform nearly uniform uneven processing over the processed area 81 of the substrate 80. Therefore, this processing device 100 can also precisely perform fine uneven processing over the processed area 81 of the substrate 80.
  • such a processing device 100 does not require the use of high laser energy, and can be constructed inexpensively without using expensive laser light sources or optical components, and can suppress deterioration of accuracy due to thermal drift of the laser beam, allowing for high-precision processing. Also, because small optical components can be used, inexpensive, high-precision components can be used.
  • the processing device 100 of the first embodiment is preferably configured to perform synchronous sweep irradiation with the laser beam irradiation position fixed, in addition to the superimposed irradiation described above, as in the second embodiment.
  • the laser beam 1 emitted from the laser light source 11 is preferably an excimer laser.
  • Excimer lasers have a higher resolution due to their shorter wavelength compared to conventional solid-state lasers, such as LD-pumped solid-state (DPSS) lasers. Therefore, by using an excimer laser, more precise uneven processing is possible. Also, for example, excimer lasers have very high absorptivity for epoxy-based substrate materials, and have high processing capabilities. Furthermore, excimer lasers have low coherency and are less likely to produce interference fringes, so they can form a very uniform flat-top beam pattern. This makes it possible to make the processing depth by ablation uniform.
  • DPSS LD-pumped solid-state
  • the shaping optical system 12 is preferably an optical system equipped with multiple cylindrical lenses, which shapes the laser beam 1 from the laser light source 11 into a laser beam having a rectangular irradiation shape and a uniform irradiation energy density, in particular a top-hat shaped laser beam.
  • Figure 5 shows a conceptual diagram of shaping the irradiation shape of a laser beam in a shaping optical system equipped with multiple cylindrical lenses.
  • the shaping optical system 12 shown in FIG. 5 comprises a plurality of cylindrical lenses consisting of an X1 cylindrical lens 13, a Y1 cylindrical lens 14, an X2 cylindrical lens 15, and a Y2 cylindrical lens 16, and a focusing lens 17.
  • the X1 cylindrical lens 13 and the X2 cylindrical lens 15 are arranged at a distance twice their focal length f1, as shown in the lower part of FIG. 5.
  • the Y1 cylindrical lens 14 and the Y2 cylindrical lens 16 are also arranged at a distance twice their focal length.
  • the laser beam 1 emitted by the laser light source 11 shown in FIG. 1 has a non-uniform irradiation shape (beam profile) as shown in FIG. 5.
  • each component of the laser beam 1 is shaped according to their positions in the X and Y directions.
  • the lower part of FIG. 5 shows, for example, a schematic diagram of the component indicated by "2" being shaped through cylindrical lenses 14 and 16.
  • Each component of the laser beam 1 is shaped by the cylindrical lenses 13 to 16 and is focused at a position a focal length f2 away from the focusing lens 17.
  • the laser beam 2 has a top hat beam shape, and is emitted from the shaping optical system 12 as an outgoing light.
  • the processing device 100 by performing overlapping irradiation using such a rectangular beam profile, there are no dead spots, which are areas that are not irradiated, and uneven processing that is averaged within the tolerance range of the target processing can be performed, making it possible to perform uneven processing of the substrate 80 with extremely high efficiency.
  • the second optical function section 20 further includes a mask stage that holds the mask 21 and sweeps the mask 21 . By attaching a sweep axis to the mask stage on which the mask 21 is held, the mask can be efficiently swept.
  • correction tilt axis, ⁇ axis
  • the second optical function section 20 can be configured to further shape the irradiation shape of the laser beam 2 that has passed through the first optical function section 10 through a mask 21 .
  • the second optical function section 20 can further shape the irradiation shape of the laser beam 2 , which has been formed into a rectangular shape, according to a pattern corresponding to the processed region 81 of the substrate 80 , for example.
  • the mask 21 is installed in a direction approximately perpendicular to the horizontal plane on which the processing device 100 is installed.
  • the supports When inserting supports under the mask to prevent bending, the supports must be optically transparent, but as the mask becomes larger, the support material must be thicker, which not only creates cost problems but also increases the absorption of laser energy in the support material, reducing the energy efficiency of the laser irradiation.
  • the optical path length from the laser light source to the substrate is long, if the mask is placed horizontally, the height of the equipment becomes large. By placing the mask vertically, it becomes possible to lower the height of the equipment.
  • the mask 21 if the mask 21 is placed in a direction approximately perpendicular to the horizontal surface on which the processing device 100 is placed, the mask 21 will not bend and there is no need for support to prevent bending using an optically transparent material, so the laser energy can be used efficiently and processing can be performed with high precision and extremely high uniformity.
  • the irradiation area of the laser beam 3 that has passed through the mask 21 can be reduced through an optional reduction projection optical system 31, which will be described below, to increase the energy density of the laser beam 4 that is irradiated onto the substrate. Therefore, even if the mask 21 is made large, by using a reduction projection optical system 31 that matches it, it is possible to perform the desired fine uneven processing.
  • the size of the mask 21 is not particularly limited.
  • a mask 21 with an outer dimension of 700 mm x 800 mm and an effective area 22 of 600 mm x 600 mm can be used.
  • Other specific examples of masks will be described later.
  • hird optical function section 30 As in the processing apparatus 100 shown in FIG. 1, it is preferable to further include a third optical function unit having a reduction projection optical system 31 between the second optical function unit 20 and the substrate stage 40 .
  • the energy of the laser beam 2 that strikes the mask 21 can be made smaller than the processing energy. If the reduction ratio of the reduction projection optical system 31 is N, the energy of the laser beam that strikes the mask surface is 1/(N 2 ) compared to the processing energy of the substrate 80 surface. This makes it possible to suppress thermal drift caused by the energy of the laser beam 2, thereby suppressing thermal expansion of the mask 21 and enabling high-precision processing even after a long period of processing operation.
  • optical components e.g., the shaping optical system 12 and mask 21
  • deterioration of optical components caused by the heat of the laser beam can be suppressed, thereby extending the lifespan of the optical components.
  • the processing device 100 which is configured to perform synchronous sweep irradiation with the laser beam irradiation position fixed as described above, can use a reduced projection lens with a very small aperture compared to the method of, for example, Patent Document 2, which moves the laser beam irradiation position. Therefore, in addition to being advantageous in terms of cost, there is little lens distortion and the aberration caused by the lens can be reduced, making it possible to very high the processing precision of the substrate.
  • the reduction projection optical system 31 can be equipped with a pair of reduction projection lenses.
  • the magnification achieved by the reduction projection optical system 31 can be adjusted, for example, by the ratio of the focal lengths of the reduction projection lenses and the distance between the reduction projection lenses.
  • the reduction projection lens is preferably one with a high NA (numerical aperture). By using a reduction projection lens with a high NA, it is possible to form vias and trenches that are closer to a cylindrical shape.
  • the NA of the reduction projection lens is preferably selected according to the energy density required for processing the substrate 80.
  • the NA of the reduction projection lens is preferably 0.12 or more.
  • the third optical function unit 30 further includes a cooling means for cooling the reduction projection optical system 31.
  • the laser beam 3 that has passed through the mask 21 is reduced and projected at 1/N, so that the energy of the laser beam that passes through the lens part at the tip of the objective becomes N2 times as much as the laser beam energy irradiated on the mask 21, and this part is prone to heat influence. Therefore, by providing a cooling function to the reduction projection optical system 30 in order to suppress this heat energy, it is possible to suppress the thermal drift due to the energy of the laser beam, and it becomes possible to perform high-precision processing even after a long-term processing operation.
  • the processing apparatus 100 which is configured to perform synchronous sweep irradiation with the laser beam irradiation position fixed as described above, can use a reduction projection lens with a much smaller aperture than the method of Patent Document 2.
  • the cooling means for the reduction projection lens cannot be directly attached to the lens itself, but rather cools the jacket part that holds the lens. Therefore, when the lens aperture is large, although temperature control is possible in the peripheral part of the lens, the cooling effect is difficult to spread around the crucial central part, making heat control difficult. Therefore, even a small amount of energy absorbed into the lens due to long-term laser beam irradiation can easily cause distortion due to heat. If the third optical function part 30 has a cooling function, the lens aperture can be made small, thereby suppressing such problems.
  • the processing apparatus 100 is configured to non-stop sweep the mask 21 and the substrate stage 40 while irradiating the mask 21 and the substrate stage 40 with pulsed laser beams 2 and 4, respectively, in a sweep irradiation in at least one direction.
  • the processing apparatus 100 of the present invention further includes an imaging means for reading a characteristic portion of the substrate 80, an imaging means for reading a characteristic portion of the mask 21, and an alignment mechanism for aligning the relative positions of the substrate and the mask based on positional information of the characteristic portion of the substrate and the characteristic portion of the mask.
  • the processing device 100 shown in FIG. 1 includes a mask alignment camera 23 as an imaging means for reading characteristic portions of the mask 21, a substrate alignment camera 60 as an imaging means for reading characteristic portions of the substrate 80, and an alignment mechanism (not shown).
  • the mask alignment camera 23 is configured to send position information of the characteristic portions of the mask 21 to the alignment mechanism.
  • the substrate alignment camera 60 is configured to send position information of the characteristic portions of the substrate 80 to the alignment mechanism.
  • the alignment mechanism is configured to align the relative positions of the substrate 80 and the mask 21 based on this position information.
  • circuit boards are often processed across multiple layers, and if the processing position of each layer is not precisely aligned with the intended position, the circuits on each layer may not be connected, or even if they are connected, there may be high conductive resistance and other quality defects. To prevent this, precision in the processing position is necessary.
  • the shape of the projected image of the pattern on the mask 21 is not necessarily exactly similar to the processed shape of the substrate 80, and the magnification is not always the same due to the effects of thermal expansion and the like. Also, there are cases where it becomes necessary to deform the processed shape on the substrate 80 relative to the projected image of the mask 21 due to minute distortions or deformations of the substrate 80.
  • the positions of the mask 21 and the substrate 80 are acquired by imaging means (mask alignment camera 23 and substrate alignment camera 60), and the projected image of the mask 21 is aligned with the shape of the substrate to be processed based on this information, making it possible to accurately process the unevenness of the substrate.
  • the projection position of the projection image of the mask 21 is acquired by the beam image detection camera 70, and correction is made based on the information of this projection position to optimize the projection magnification by the third optical function unit 30, and the sweep speed during sweep irradiation is optimized based on the above information.
  • This makes it possible to arbitrarily change the vertical and horizontal magnifications of the substrate 80 relative to the image of the mask 21 within a certain range, and to apply the optimal substrate processing shape.
  • the processing method of the first aspect of the present invention is a method of performing the above-described overlapping irradiation using the processing apparatus 100 of the first aspect. Therefore, according to the processing method of the first aspect of the present invention, it is possible to perform fine uneven processing over the processing area of the substrate with high accuracy. In addition, it is possible to perform irradiation with high energy density, and it is possible to perform high-speed and deep VIA processing and/or trench processing.
  • the processing method of the present invention is not limited to the method using the processing device 100 of the first embodiment described above.
  • the processing method of the second aspect of the present invention is a processing method for forming fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, in which a rectangularly shaped laser beam is passed through a mask to irradiate the substrate with the laser beam so that the substrate irradiation area is smaller than the substrate processing area, and during the processing operation on the substrate, a portion of the substrate irradiation area is overlapped while processing the substrate surface irregularities in the substrate processing area.
  • the substrate is irradiated with a laser beam so that the substrate irradiation area is smaller than the substrate processing area, and the substrate processing area is processed with surface irregularities while overlapping a portion of the substrate irradiation area, i.e., overlapping irradiation is performed, so it is possible to precisely perform uneven processing that is almost uniform across the substrate processing area. Therefore, with this type of processing device, it is possible to precisely perform fine uneven processing across the substrate processing area.
  • the use of an excimer laser makes it possible to process the unevenness with higher precision.
  • the processing method of the third aspect of the present invention is a method of performing synchronous sweep irradiation with the laser beam irradiation position described above fixed using the processing device 100 of the second aspect. Therefore, according to the processing method of the third aspect of the present invention, fine uneven processing can be performed with high precision over the entire processing area of the substrate. Furthermore, according to the processing method of the third aspect, processing can be performed with higher precision than when scanning the laser beam. Furthermore, with such a processing method, a large area mask can be used as the mask 21, and processing can be performed at a higher energy density by using a large area mask in combination with the third optical function unit 30 described above.
  • a processing device 100 that satisfies one or more of the optional items described above.
  • the sweep irradiation in at least one direction it is preferable to sweep the mask 21 and the substrate stage 40 non-stop while irradiating the mask 21 and the substrate stage 40 with pulsed irradiation of the laser beam 2 or 4, respectively.
  • processing can be performed to the desired depth, and high-speed processing can be performed.
  • the substrate irradiation area 90 is shifted for each sweep, as described with reference to Figures 3 and 4, for example, so that the processing depth is averaged and processing of a uniform depth can be performed.
  • the processing method of the first or third aspect preferably further includes reading the characteristic portions of the substrate 80 and the mask 21, and using an alignment mechanism to align the relative positions of the substrate 80 and the mask 21 based on position information of the characteristic portions of the substrate 80 and the mask 21.
  • the characteristic parts of the substrate 80 can be read, for example, by a substrate alignment camera 60.
  • the characteristic parts of the mask 21 can be read, for example, by a mask alignment camera 23.
  • This type of processing method allows for more accurate processing of unevenness on the substrate.
  • This type of correction can be performed by combining, for example, the third optical function unit 30, the beam image detection camera 70, the sweeping mechanism for the mask 21, and the sweeping mechanism for the substrate stage 80.
  • a substrate is processed by the processing method of the present invention.
  • This type of substrate manufacturing method allows multiple irradiations to be performed with a uniform processing depth in the substrate irradiation area in the substrate that corresponds to the mask irradiation area, which is a portion of the effective area of the mask, so it is possible to precisely perform roughly uniform uneven processing across the substrate processing area. Therefore, this type of substrate manufacturing method makes it possible to manufacture a substrate on which fine uneven processing is precisely formed across the substrate processing area.
  • this type of substrate manufacturing method does not require the use of high laser energy, and can be constructed inexpensively without using expensive laser light sources or optical components. It also prevents deterioration of accuracy due to thermal drift of the laser beam, making it possible to manufacture substrates that have been processed with high precision.
  • the above-mentioned superimposed irradiation is performed during processing of the substrate, so that deep VIA processing and/or trench processing can be performed at high speed.
  • the substrate irradiation area in one shot can be made small, making high-density irradiation possible.
  • the above-mentioned synchronous sweep irradiation is performed with the laser beam irradiation position fixed during processing of the substrate, so processing can be performed with higher precision than when the laser beam is scanned. Furthermore, with such a processing method, a large-area mask can be used, so processing can be performed with a higher energy density.
  • the substrate manufacturing method of the present invention can be particularly advantageously applied to the manufacture of semiconductor packages.
  • the substrate to be subjected to the ablation surface processing according to the present invention is not particularly limited.
  • the substrate may be, for example, a substrate having a resist film on its surface to be processed.
  • FIG. 6 is a schematic perspective view of an example of a substrate to be processed.
  • Substrate 80 shown in FIG. 6 has a base substrate 80A and a resist film 80B on the surface of base substrate 80A.
  • substrate 80 is a substrate having a resist film 80B, which is the substrate to be processed, on its surface.
  • the material of the resist film is not particularly limited. Examples include solder resist (photo- or heat-curing type), electroforming resist, and circuit formation resist (etching resist (resist for pattern etching of patterned electrode material such as copper, and tenting resist for forming electrode material such as copper around holes), and plating resist).
  • the method for forming the resist film can be selected appropriately depending on the resist material and the purpose of the resist film. For example, a liquid resist material may be applied, or a film-like resist material may be laminated on the substrate 80A using a lamination method.
  • the method for hardening the resist material depends on the resist material.
  • the resist material can be hardened by thermal hardening or photohardening.
  • the resist does not necessarily need to have photosensitivity for fine patterning, since the processing device of the present invention is used to process the surface into fine irregularities. However, if photosensitive patterning and fine processing using the processing device are used in combination, the resist may have photosensitivity. On the other hand, a curable material may be used to increase durability in post-processing steps (plating, etching, etc.).
  • the resist film can also be called an organic film or a resin film.
  • Example 1 (1) forming a resist film; (2) hardening of the resist material (thermal hardening or photohardening); (3) ablation processing by laser beam irradiation; and (4) post-processing.
  • Example 2 (1) forming a resist film; (2) ablation processing by laser beam irradiation; (3) hardening of the resist material (thermal hardening or photohardening); (4) post-processing.
  • Example 3 (1) forming a resist film; (2) ablation processing by laser beam irradiation; (3) patterning utilizing photosensitivity; (4) development; and (5) post-processing.
  • Example 4 (1) forming a resist film; (2) patterning using photosensitivity; (optional) developing; (3) ablation processing by laser beam irradiation; (optional) developing; (4) post-treatment.
  • a mask having an outer dimension of 700 mm ⁇ 800 mm and an effective area of 600 mm ⁇ 600 mm is given as an example, but in another aspect, the present invention can use a mask 21 having dimensions in the vertical and horizontal directions perpendicular to the thickness direction (dimensions 21a and 21b in FIG. 7, respectively) of 700 mm or more, and dimensions in the vertical and horizontal directions perpendicular to the thickness direction of the effective area 22 (dimensions 22a and 22b in FIG. 7, respectively) of 500 mm or more.
  • the upper limits of the dimensions 21a and 21b are not particularly limited, but can be, for example, 1,800 mm.
  • the upper limits of the dimensions 22a and 22b are not particularly limited, but can be, for example, 1,300 mm.
  • such a large mask 21 can be used.
  • the large mask 21 in combination with the reduced projection optical system 31, the energy density of the laser beam irradiated onto the substrate can be increased.
  • the processing apparatus 100 preferably uses a first unit 100A including a first optical function unit (including a laser light source 11 and a shaping optical system 12) 10, and a second unit 100B detachable from the first unit 100A, the second unit 200B including a second optical function unit 20 and a substrate stage 40.
  • the second unit 100B further includes an optional third optical function unit 30.
  • the first unit 100A and the second unit 100B are coupled via a detachment mechanism 100C.
  • this type of processing device 100 When this type of processing device 100 is introduced into a factory, it can be brought in with the first unit 100A and the second unit 100B separated. In other words, this type of processing device 100 can be easily transported in parts. Furthermore, by using this type of processing device 100, installation costs can be reduced.
  • the processing apparatus may further include a vertical mask changer configured to exchange a plurality of masks.
  • a processing device further equipped with such a vertical mask changer can easily form a variety of patterns.
  • Figure 9 shows a schematic diagram of an example of mask replacement using an example of a vertical mask changer.
  • This example shows the installation and replacement of a mask 21 to be placed in a mask holder 25 shown diagrammatically in FIG. 9(A).
  • This example also uses a mask stocker 26 as part of a vertical mask changer.
  • the mask stocker 26 is configured to store multiple masks.
  • the mask 21 is removed from the mask stocker 26 using the mask clamp 27.
  • the manner in which the mask 21 is held (clamped) by the mask clamp 27 is not particularly limited.
  • the mask stocker 26 and the mask clamp 27 constitute a vertical mask changer 28 configured to exchange multiple masks 21.
  • the mask 21 is placed in the mask holder 25 while still in a vertical orientation. After placement, the mask clamp 27 is released from its grip (unclamped) as shown in FIG. 9(D).
  • the mask 21 placed on the mask holder 25 is held by the mask clamp 27 as shown in FIG. 9(E), and then the mask 21 is detached from the mask holder 25 as shown in FIG. 9(F).
  • the detached mask 21 is stored in the mask stocker 26 as shown in FIG. 9(G).
  • the next mask 21 to be used is removed from the mask stocker 26 in the same manner as shown in FIG. 9(B), and the mask 21 is placed on the mask holder 25 using the procedure previously described. This makes it possible to replace multiple masks 21 while maintaining the vertical arrangement.
  • the processing device 100 may also be provided with a mask cabinet 29 shown in FIG. 10.
  • the mask cabinet 29 is configured to store and transport a plurality of mask stockers 26.
  • the mask cabinet 29 includes an opening 29A, and is configured so that the mask stocker 26 storing the desired mask 21 can be moved to the position of the opening 29A while maintaining the mask 21 in a vertical position within the mask cabinet 29.
  • the effective diameter of the lens refers to the inner diameter of the objective lens.
  • Projection lenses with an effective lens diameter of 150 mm or less have the advantage of easy thermal management and little distortion. They are also low cost.
  • the processing method of the present invention is capable of precisely processing uneven surfaces that are almost uniform across the entire processing area of the substrate, even when using a projection lens with an effective lens diameter of 150 mm or less.
  • fine projections and recesses can be formed in various ways.
  • the distance 202 between the bottoms of adjacent trenches 200 is 110% or more of the average width 201b of the bottoms, for example, 110% or more and 200% or less.
  • multiple trenches 200 can be formed in which the depth 203 is 20 ⁇ m or less, for example, 10 ⁇ m or more and 20 ⁇ m or less, and the ratio of the depth 203 to the average width 201 of the bottom in the cross section is 1.0 or more, for example, 1.0 or more and 4.0 or less.
  • the average width 201b of the bottom of the cross section of the trench 200 is 70% or more, for example, 70% or more and 100% or less, of the width 201t of the opening on the surface of the substrate 80 (80B), i.e., cylindrical trenches 200.
  • multiple trenches 200 having an opening width 201t on the surface of the substrate 80 (80B) of 20 ⁇ m or less, for example, 2 ⁇ m or more and 20 ⁇ m or less, can be formed.
  • multiple trenches 200 multiple trenches with a high aspect ratio in which the ratio of the depth 203 to the average width 201b of the bottom in the cross section is 1.1 or more, even 1.5 or more, even 2.4 or more, or even 3.4 or more can be formed.
  • the upper limit of the above ratio is not particularly limited, but can be, for example, 4.0.
  • the fine irregularities can be formed to further include a plurality of through holes 400.
  • a portion of the multiple trenches 200 can be formed between adjacent through holes 400 among the multiple through holes 400.
  • a portion of the multiple trenches 200 can be formed at 40% or more, for example, 40% or more and 50% or less, of the width 400A between adjacent through holes 400.
  • the percentage of 40% or more mentioned here is (the sum of widths 201x, 201y, and 201z)/width 400A in FIG. 13.
  • the concave-convex pattern is represented as a two-dimensional pattern that spreads in one direction perpendicular to the thickness direction of the substrate, but it may be a three-dimensional pattern that spreads in two directions perpendicular to the thickness direction of the substrate.
  • the present invention is not limited to the above-described embodiments.
  • the above-described embodiments are merely examples, and anything that has substantially the same configuration as the technical idea described in the claims of the present invention and exhibits similar effects is included within the technical scope of the present invention.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Drying Of Semiconductors (AREA)
PCT/JP2023/015601 2023-04-19 2023-04-19 加工装置、加工方法及び基板の製造方法 Ceased WO2024218894A1 (ja)

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CN202380097269.3A CN121057635A (zh) 2023-04-19 2023-04-19 加工装置、加工方法以及基板制造方法
JP2025514953A JPWO2024218894A1 (https=) 2023-04-19 2023-04-19
KR1020257038565A KR20250168695A (ko) 2023-04-19 2023-04-19 가공 장치, 가공 방법 및 기판의 제조 방법
DE112023006225.0T DE112023006225T5 (de) 2023-04-19 2023-04-19 Bearbeitungsvorrichtung, bearbeitungsverfahren und herstellungsverfahren eines substrats
PCT/JP2023/015601 WO2024218894A1 (ja) 2023-04-19 2023-04-19 加工装置、加工方法及び基板の製造方法
TW113114080A TW202442364A (zh) 2023-04-19 2024-04-16 加工裝置、加工方法以及基板製造方法

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JPH0847790A (ja) * 1994-06-02 1996-02-20 Mitsubishi Electric Corp 光加工装置及び方法
JPH0866781A (ja) * 1994-08-30 1996-03-12 Mitsubishi Electric Corp エキシマレーザビーム照射装置
WO1999033603A1 (fr) * 1997-12-26 1999-07-08 Mitsubishi Denki Kabushiki Kaisha Appareil d'usinage au laser
JP2000223382A (ja) * 1998-11-25 2000-08-11 Komatsu Ltd レ―ザビ―ムによる微小ドットマ―ク形態、そのマ―キング方法
JP2000263265A (ja) * 1999-03-19 2000-09-26 Shinozaki Seisakusho:Kk レーザ加工装置
JP2001038483A (ja) * 1999-07-27 2001-02-13 Sumitomo Heavy Ind Ltd レーザ穴あけ加工方法及び加工装置
JP2006054255A (ja) * 2004-08-10 2006-02-23 Kaneka Corp 太陽電池製造装置

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JP2001079678A (ja) 1999-09-13 2001-03-27 Sumitomo Heavy Ind Ltd レーザ穴あけ加工方法及び加工装置
JP7393087B2 (ja) 2019-09-26 2023-12-06 株式会社オーク製作所 アブレーション加工用の加工装置および加工方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0847790A (ja) * 1994-06-02 1996-02-20 Mitsubishi Electric Corp 光加工装置及び方法
JPH0866781A (ja) * 1994-08-30 1996-03-12 Mitsubishi Electric Corp エキシマレーザビーム照射装置
WO1999033603A1 (fr) * 1997-12-26 1999-07-08 Mitsubishi Denki Kabushiki Kaisha Appareil d'usinage au laser
JP2000223382A (ja) * 1998-11-25 2000-08-11 Komatsu Ltd レ―ザビ―ムによる微小ドットマ―ク形態、そのマ―キング方法
JP2000263265A (ja) * 1999-03-19 2000-09-26 Shinozaki Seisakusho:Kk レーザ加工装置
JP2001038483A (ja) * 1999-07-27 2001-02-13 Sumitomo Heavy Ind Ltd レーザ穴あけ加工方法及び加工装置
JP2006054255A (ja) * 2004-08-10 2006-02-23 Kaneka Corp 太陽電池製造装置

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