WO2024214414A1 - エッチング方法及びプラズマ処理装置 - Google Patents

エッチング方法及びプラズマ処理装置 Download PDF

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Publication number
WO2024214414A1
WO2024214414A1 PCT/JP2024/007472 JP2024007472W WO2024214414A1 WO 2024214414 A1 WO2024214414 A1 WO 2024214414A1 JP 2024007472 W JP2024007472 W JP 2024007472W WO 2024214414 A1 WO2024214414 A1 WO 2024214414A1
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Prior art keywords
film
gas
metal
recess
substrate
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Ceased
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PCT/JP2024/007472
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English (en)
French (fr)
Japanese (ja)
Inventor
仙善 有馬
嘉英 木原
幕樹 戸村
圭恵 ▲高▼橋
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2025513818A priority Critical patent/JP7785422B2/ja
Priority to CN202480023485.8A priority patent/CN120883336A/zh
Priority to KR1020257037367A priority patent/KR20250174655A/ko
Publication of WO2024214414A1 publication Critical patent/WO2024214414A1/ja
Priority to US19/350,098 priority patent/US20260033265A1/en
Anticipated expiration legal-status Critical
Priority to JP2025211379A priority patent/JP2026020408A/ja
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Definitions

  • An exemplary embodiment of the present disclosure relates to an etching method and a plasma processing apparatus.
  • Patent Document 1 discloses a technique for etching a silicon-containing film while suppressing bowing.
  • This disclosure provides technology to suppress shape abnormalities in etching.
  • an etching method performed in a plasma processing apparatus having a chamber including: (a) preparing a substrate, the substrate including a film to be etched having a recess, and a mask having an opening exposing the recess and disposed on the film to be etched; (b) forming a metal-containing film on a sidewall of the recess using a first plasma formed from a first process gas including a metal-containing gas, the metal-containing gas including at least one metal selected from the group consisting of ruthenium, tungsten, molybdenum, and titanium; and (c) etching the film to be etched in the recess using a second plasma formed from a second process gas including hydrogen fluoride gas.
  • a technology can be provided that suppresses shape abnormalities in etching.
  • FIG. 1 is a diagram for explaining a configuration example of a plasma processing apparatus.
  • FIG. 1 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.
  • FIG. 1 is a diagram for explaining an example of bowing.
  • 1 is a flow chart illustrating an example of the method.
  • 1 is a diagram showing an example of a cross-sectional structure of a substrate W provided in a process ST11.
  • 13 is a diagram showing an example of a cross-sectional structure of the substrate W after being processed in step ST12.
  • FIG. 13 is a diagram showing an example of a cross-sectional structure of the substrate W after being processed in step ST2.
  • FIG. 13 is a diagram showing an example of a cross-sectional structure of a substrate W being processed at step ST3.
  • FIG. 1 is a diagram for explaining a configuration example of a plasma processing apparatus.
  • FIG. 1 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.
  • FIG. 1 is
  • an etching method is provided that is performed in a plasma processing apparatus having a chamber, the etching method including: (a) preparing a substrate, the substrate including a film to be etched having a recess, and a mask having an opening exposing the recess and disposed on the film to be etched; (b) forming a metal-containing film on a sidewall of the recess using a first plasma formed from a first process gas including a metal-containing gas, the metal-containing gas including at least one metal selected from the group consisting of ruthenium, tungsten, molybdenum, and titanium; and (c) etching the film to be etched in the recess using a second plasma formed from a second process gas including hydrogen fluoride gas.
  • the second process gas further includes a metal-containing gas, and in (c), a metal-containing film is formed on the sidewall of the recess and the film to be etched is etched in the recess.
  • a cycle including steps (b) and (c) is repeated multiple times.
  • the second process gas further comprises a phosphorus-containing gas.
  • the temperature of the substrate or the substrate support that supports the substrate is controlled to be below 0°C.
  • an etching method is provided that is performed in a plasma processing apparatus having a chamber, the etching method including the steps of: (a) preparing a substrate, the substrate including a film to be etched having a recess, and a mask having an opening exposing the recess and disposed on the film to be etched; and (b) forming a metal-containing film on the sidewall of the recess and etching the film to be etched in the recess using plasma generated from a process gas including a metal-containing gas and hydrogen fluoride gas, the metal-containing gas including at least one metal selected from the group consisting of ruthenium, tungsten, molybdenum, and titanium.
  • the process gas further comprises a phosphorus-containing gas.
  • the temperature of the substrate or the substrate support that supports the substrate is controlled to be below 0°C.
  • the film to be etched is a silicon-containing film, a carbon-containing film, or a metal oxide film.
  • the film to be etched includes at least one selected from the group consisting of a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a silicon carbonitride film, and a polycrystalline silicon film, as well as a laminate film including at least two of these films.
  • the mask comprises at least one metal selected from the group consisting of ruthenium, tungsten, molybdenum, titanium, indium, gallium, and zinc.
  • the mask is a carbon-containing film.
  • the substrate includes an etch stop film below the film to be etched, the etch stop film including at least one metal selected from the group consisting of ruthenium, tungsten, molybdenum, titanium, indium, gallium, and zinc.
  • a plasma processing apparatus includes a chamber and a control unit, the control unit being configured to: (a) control a substrate to be prepared in the chamber, the substrate including a film to be etched having a recess, and a mask having an opening exposing the recess and disposed on the film to be etched; (b) control a metal-containing film to be formed on a sidewall of the recess using a first plasma formed in the chamber from a first process gas including a metal-containing gas, the metal-containing gas including at least one metal selected from the group consisting of ruthenium, tungsten, molybdenum, and titanium; and (c) control a second plasma formed in the chamber from a second process gas including hydrogen fluoride gas to etch the film to be etched in the recess.
  • FIG. 1 is a diagram for explaining a configuration example of a plasma processing system.
  • the plasma processing system includes a plasma processing device 1 and a control unit 2.
  • the plasma processing system is an example of a substrate processing system
  • the plasma processing device 1 is an example of a substrate processing device.
  • the plasma processing device 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12.
  • the plasma processing chamber 10 has a plasma processing space.
  • the plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas exhaust port for exhausting gas from the plasma processing space.
  • the gas supply port is connected to a gas supply unit 20 described later, and the gas exhaust port is connected to an exhaust system 40 described later.
  • the substrate support unit 11 is disposed in the plasma processing space, and has a substrate support surface for supporting a substrate.
  • the plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space.
  • the plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR plasma (Electron-Cyclotron-resonance plasma), Helicon wave excited plasma (HWP: Helicon Wave Plasma), or surface wave plasma (SWP: Surface Wave Plasma), etc.
  • various types of plasma generating units may be used, including AC (Alternating Current) plasma generating units and DC (Direct Current) plasma generating units.
  • the AC signal (AC power) used in the AC plasma generating unit has a frequency in the range of 100 kHz to 10 GHz.
  • AC signals include RF (Radio Frequency) signals and microwave signals.
  • the RF signal has a frequency in the range of 100 kHz to 150 MHz.
  • the control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various steps described in this disclosure.
  • the control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various steps described herein. In one embodiment, a part or all of the control unit 2 may be included in the plasma processing apparatus 1.
  • the control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3.
  • the control unit 2 is realized, for example, by a computer 2a.
  • the processing unit 2a1 may be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when necessary.
  • the acquired program is stored in the storage unit 2a2 and is read from the storage unit 2a2 by the processing unit 2a1 and executed.
  • the medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3.
  • the processing unit 2a1 may be a CPU (Central Processing Unit).
  • the memory unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), a SSD (Solid State Drive), or a combination of these.
  • the communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).
  • FIG. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.
  • the capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40.
  • the plasma processing apparatus 1 also includes a substrate support unit 11 and a gas inlet unit.
  • the gas inlet unit is configured to introduce at least one processing gas into the plasma processing chamber 10.
  • the gas inlet unit includes a shower head 13.
  • the substrate support unit 11 is disposed in the plasma processing chamber 10.
  • the shower head 13 is disposed above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a part of the ceiling of the plasma processing chamber 10.
  • the plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the sidewall 10a of the plasma processing chamber 10, and the substrate support unit 11.
  • the plasma processing chamber 10 is grounded.
  • the shower head 13 and the substrate support unit 11 are electrically insulated from the housing of the plasma processing chamber 10.
  • the substrate support 11 includes a main body 111 and a ring assembly 112.
  • the main body 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112.
  • a wafer is an example of a substrate W.
  • the annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view.
  • the substrate W is disposed on the central region 111a of the main body 111
  • the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.
  • the main body 111 includes a base 1110 and an electrostatic chuck 1111.
  • the base 1110 includes a conductive member.
  • the conductive member of the base 1110 may function as a lower electrode.
  • the electrostatic chuck 1111 is disposed on the base 1110.
  • the electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a.
  • the ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b.
  • the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member.
  • at least one RF/DC electrode coupled to an RF power source 31 and/or a DC power source 32 described later may be disposed in the ceramic member 1111a.
  • the at least one RF/DC electrode functions as a lower electrode.
  • the RF/DC electrode is also called a bias electrode.
  • the conductive member of the base 1110 and the at least one RF/DC electrode may function as multiple lower electrodes.
  • the electrostatic electrode 1111b may function as a lower electrode.
  • the substrate support 11 includes at least one lower electrode.
  • the ring assembly 112 includes one or more annular members.
  • the one or more annular members include one or more edge rings and at least one cover ring.
  • the edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.
  • the substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature.
  • the temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof.
  • a heat transfer fluid such as brine or a gas flows through the flow passage 1110a.
  • the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111.
  • the substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 111a.
  • the shower head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s.
  • the shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c.
  • the processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c.
  • the shower head 13 also includes at least one upper electrode.
  • the gas introduction unit may include, in addition to the shower head 13, one or more side gas injectors (SGI) attached to one or more openings formed in the sidewall 10a.
  • SGI side gas injectors
  • the gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22.
  • the gas supply unit 20 is configured to supply at least one process gas from a respective gas source 21 through a respective flow controller 22 to the showerhead 13.
  • Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller.
  • the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.
  • the power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit.
  • the RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and/or at least one upper electrode. This causes a plasma to be formed from at least one processing gas supplied to the plasma processing space 10s.
  • the RF power supply 31 can function as at least a part of the plasma generating unit 12.
  • a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, and ion components in the formed plasma can be attracted to the substrate W.
  • the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b.
  • the first RF generating unit 31a is coupled to at least one lower electrode and/or at least one upper electrode via at least one impedance matching circuit and configured to generate a source RF signal (source RF power) for plasma generation.
  • the source RF signal has a frequency in the range of 10 MHz to 150 MHz.
  • the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and/or at least one upper electrode.
  • the second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power).
  • the frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal.
  • the bias RF signal has a lower frequency than the frequency of the source RF signal.
  • the bias RF signal has a frequency in the range of 100 kHz to 60 MHz.
  • the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies.
  • the generated one or more bias RF signals are provided to at least one lower electrode. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.
  • the power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10.
  • the DC power supply 32 includes a first DC generator 32a and a second DC generator 32b.
  • the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal.
  • the generated first DC signal is applied to the at least one lower electrode.
  • the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal.
  • the generated second DC signal is applied to the at least one upper electrode.
  • the first and second DC signals may be pulsed.
  • a sequence of voltage pulses is applied to at least one lower electrode and/or at least one upper electrode.
  • the voltage pulses may have a rectangular, trapezoidal, triangular or combination thereof pulse waveform.
  • a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode.
  • the first DC generator 32a and the waveform generator constitute a voltage pulse generator.
  • the second DC generator 32b and the waveform generator constitute a voltage pulse generator
  • the voltage pulse generator is connected to at least one upper electrode.
  • the voltage pulses may have a positive polarity or a negative polarity.
  • the sequence of voltage pulses may also include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses within one period.
  • the first and second DC generating units 32a and 32b may be provided in addition to the RF power source 31, or the first DC generating unit 32a may be provided in place of the second RF generating unit 31b.
  • the exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10.
  • the exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve.
  • the vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.
  • Bowing is known as one of the shape abnormalities in plasma etching. Bowing is a phenomenon in which the opening dimension of a part of the sidewall of a recess formed by etching becomes larger than the opening dimension of the top of the recess.
  • the part where bowing occurs has, for example, a barrel shape in cross section. It is thought that bowing can occur when a part of the sidewall of the recess is scraped off by ions or the like that recoil from a mask or the like.
  • FIG. 3 is a diagram for explaining an example of bowing.
  • FIG. 3 shows an example of a cross-sectional structure in which a recess RC is formed by etching a film EF to be etched on a substrate W through a mask MK having an opening OP.
  • a barrel-shaped bow occurs in cross section on the upper side (low aspect region) of the recess RC.
  • the opening dimension of the recess RC where the bowing occurs is larger than the opening dimension of the middle to lower side of the recess RC (medium aspect region to high aspect region). Bowing may occur not only on the upper side of the recess RC, but also on the middle to lower side of the recess RC.
  • the method includes a step ST1 of preparing a substrate, a step ST2 of forming a metal-containing film in a recess, and a step ST3 of etching the recess.
  • the step ST1 includes a step ST11 of providing a substrate W, and a step ST12 of etching the substrate W to form a recess.
  • the processes in each step may be performed in a plasma processing apparatus 1 (see FIGS. 1 and 2).
  • the method is performed by a control unit 2 controlling each part of a capacitively coupled plasma processing apparatus 1 (see FIG. 2).
  • Step ST1 Preparation of substrate
  • a substrate having a recess is prepared.
  • a substrate W is provided in a plasma processing space 10s of the plasma processing apparatus 1.
  • a recess is formed in the substrate W.
  • FIG. 5 is a diagram showing an example of a cross-sectional structure of the substrate W provided in process ST11.
  • the substrate W includes a film to be etched EF and a mask MK placed on the film to be etched EF.
  • the film to be etched EF may be formed on an undercoat film UF.
  • the substrate W may be used in the manufacture of a semiconductor device.
  • the semiconductor device may include, for example, a semiconductor memory device such as a DRAM or a 3D-NAND flash memory.
  • the undercoat film UF is a silicon wafer or an organic film, a dielectric film, a metal film, a semiconductor film, or the like formed on a silicon wafer.
  • the undercoat film UF may include an etching stop film.
  • the etching stop film includes at least one metal selected from the group consisting of tungsten, molybdenum, ruthenium, titanium, indium, gallium, and zinc.
  • the etching stop film may include, for example, a carbide or silicide of the above metal.
  • the etching stop film may be, for example, a tungsten-containing film.
  • the etching stop film may further include tungsten and at least one selected from the group consisting of silicon, carbon, and nitrogen.
  • the etching stop film includes at least one selected from the group consisting of tungsten carbide, tungsten silicide, WSiN, and WSiC.
  • the etching stop film may include, for example, at least one selected from the group consisting of ruthenium, tungsten silicide, titanium nitride, molybdenum, and InGaZnO.
  • the base film UF may be composed of multiple films stacked together.
  • the etching stop film may be formed on the uppermost layer of the base film UF.
  • the etching stop film may be disposed so as to be in contact with the film to be etched EF.
  • the film to be etched EF is the film to be etched by this method.
  • the film to be etched EF may be composed of a single film, or may be composed of multiple films stacked together.
  • the film EF to be etched is a silicon-containing film.
  • the silicon-containing film is, for example, a silicon oxide film, a silicon nitride film, a silicon carbonitride film, a polycrystalline silicon film, or a laminated film including two or more of these films.
  • the silicon-containing film may be configured by alternately stacking a silicon oxide film and a silicon nitride film.
  • the silicon-containing film may be configured by alternately stacking a silicon oxide film and a polycrystalline silicon film.
  • the silicon-containing film may be a laminated film including a silicon nitride film, a silicon oxide film, and a polycrystalline silicon film.
  • the film EF to be etched is a carbon-containing film.
  • the carbon-containing film is an amorphous carbon film.
  • the film EF to be etched is a metal oxide film.
  • the metal oxide film is a zinc oxide film or a tin oxide film.
  • the mask MK has a pattern to be transferred to the film EF to be etched by etching.
  • the mask MK may be a single-layer mask consisting of one layer, or may be a multi-layer mask consisting of two or more layers.
  • the sidewall SS1 of the mask MK defines at least one opening OP on the film EF to be etched.
  • the opening OP is a space on the film EF to be etched and is surrounded by the sidewall SS1 of the mask MK. That is, the upper surface of the film EF to be etched has an area covered by the mask MK and an area exposed at the bottom of the opening OP.
  • the openings OP may have any shape when viewed from above the substrate W, i.e., when the substrate W is viewed from the top to the bottom in FIG. 5.
  • the shape may be, for example, a circle, an ellipse, a rectangle, a line, or a combination of one or more of these.
  • the mask MK may have multiple side walls that define multiple openings OP.
  • the multiple openings OP may each have a linear shape and be arranged at regular intervals to form a line and space pattern.
  • the multiple openings OP may also each have a hole shape and form an array pattern.
  • the mask MK may be appropriately selected depending on the film EF to be etched.
  • the mask MK is made of a material that has a lower etching rate with respect to the plasma formed in step ST12 or step ST3 than the film EF to be etched.
  • the mask MK is a carbon-containing mask or a metal-containing mask.
  • the carbon-containing mask for example, is an amorphous carbon (ACL) film, a spin-on carbon (SOC) film, or a photoresist film.
  • ACL film may be doped with elements such as boron, arsenic, tungsten, and xenon.
  • the metal-containing mask for example, is a metal-containing film that contains the same type of metal as the etch stop film described above.
  • the base film UF, the film to be etched EF, and the mask MK may each be formed by any method.
  • the base film UF, the film to be etched EF, and the mask MK may be formed by CVD, ALD, PVD, spin coating, or the like.
  • the mask MK may be formed by lithography, for example.
  • the opening OP of the mask MK may be formed by etching the mask MK.
  • the base film UF, the film to be etched EF, and the mask MK may each be a flat film, or may be a film having irregularities.
  • the substrate W may further include another film below the base film UF. In this case, a recess having a shape corresponding to the opening OP may be formed in the film to be etched EF and the base film UF, and used as a mask for etching the other film.
  • At least a part of the process for forming the undercoat film UF, the film to be etched EF, and the mask MK of the substrate W may be performed in the plasma processing space 10s as part of step ST11.
  • the etching in step ST11 and the etching in step ST12 may be performed consecutively in the plasma processing space 10s.
  • the substrate W may be provided in the plasma processing space 10s after all or a part of the substrate W is formed in an apparatus or chamber external to the plasma processing apparatus 1.
  • the substrate support 11 is controlled to a given temperature by a temperature control module.
  • controlling the temperature of the substrate support 11 to a given temperature includes setting the temperature of the heat transfer fluid flowing through the flow path 1110a or the heater temperature to a given temperature, or to a temperature different from the given temperature.
  • the timing at which the heat transfer fluid starts to flow through the flow path 1110a may be before or after the substrate W is placed on the substrate support 11, or may be simultaneous.
  • the temperature of the substrate support 11 may be controlled to a given temperature before step ST1. That is, the substrate W may be provided to the substrate support 11 after the temperature of the substrate support 11 is controlled to a given temperature.
  • the given temperature is 0°C or less, -10°C or less, -20°C or less, -30°C or less, -40°C or less, -50°C, -60°C or less, or -70°C or less. In one embodiment, the given temperature is greater than or equal to -100°C.
  • the substrate W may be controlled to a given temperature.
  • Controlling the temperature of the substrate W to a given temperature includes setting the temperature of the substrate support 11, the temperature of the heat transfer fluid flowing through the flow path 1110a, and/or the heater temperature to a given temperature or to a temperature different from the given temperature.
  • a recess is formed in the film EF to be etched.
  • a processing gas is supplied from the gas supply unit 20 into the plasma processing space 10s.
  • the processing gas may be selected so that the film EF to be etched can be etched with a sufficient selectivity to the mask MK.
  • the processing gas may be the same as the second processing gas used in the etching in step ST3 described later, or it may be different.
  • the process gas may include a fluorine-containing gas.
  • the fluorine-containing gas is hydrogen fluoride (HF) gas, a fluorocarbon gas, or a hydrofluorocarbon gas.
  • the process gas may further include one or more gases selected from the group consisting of a phosphorus-containing gas, a carbon-containing gas, an oxygen-containing gas, a halogen-containing gas other than fluorine, and an inert gas.
  • the type of gas constituting the process gas and the flow rate (partial pressure) of each gas may be constant during the process in step ST12, or may be changed as the etching progresses.
  • a source RF signal is supplied to the lower electrode of the substrate support 11 and/or the upper electrode of the shower head 13. This generates a high-frequency electric field between the shower head 13 and the substrate support 11, and plasma is generated from the processing gas in the plasma processing space 10s.
  • a bias signal may be supplied to the lower electrode of the substrate support 11. This causes active species such as ions and radicals in the plasma to be attracted to the substrate W, and the film to be etched EF is etched to form a recess.
  • the bias signal may be a bias RF signal supplied from the second RF generator 31b.
  • the bias signal may be a bias DC signal supplied from the DC generator 32a.
  • the temperature of the substrate support 11 or the substrate W may be controlled to a given temperature set in step ST11.
  • Figure 6 is a diagram showing an example of the cross-sectional structure of the substrate W after processing in step ST12.
  • the processing in step ST12 etches the portion of the film to be etched EF that is exposed at the opening OP in the depth direction (from top to bottom in Figure 6), forming a recess RC.
  • the recess RC is a space defined by the sidewall SS2 and bottom BT of the film to be etched EF.
  • process ST12 may be terminated based on the dimensions (depth, opening dimensions, aspect ratio) of the recess RC and/or the etching time. In one embodiment, process ST12 may be terminated at a timing before bowing occurs in the recess RC. In one embodiment, the depth D1 of the recess RC after processing in process ST12 may be 70% or less, 60% or less, 50% or less, 40% or less, 30% or less, 20% or less, 10% or less, 5% or less, 3% or less, or 1% or less of the final etching depth (e.g., the depth D2 to the undercoat film UF).
  • a substrate W having an etching target film EF with a recess RC and a mask MK with an opening OP is prepared on the substrate support 11 of the plasma processing chamber 10.
  • the substrate W may be prepared by forming a recess RC in the substrate W in an apparatus or chamber external to the plasma processing apparatus 1, and then providing the substrate W on the substrate support 11 of the plasma processing apparatus 1.
  • Step ST2 Formation of metal-containing film
  • a metal-containing film is formed in the recess RC of the etching target film EF.
  • a first process gas containing a metal-containing gas is supplied from the gas supply unit 20 into the plasma processing space 10s.
  • the metal-containing gas is a gas containing at least one metal (hereinafter also referred to as "metal M") selected from the group consisting of ruthenium, tungsten, molybdenum, and titanium.
  • the metal-containing gas is a gas containing ruthenium and a halogen.
  • the metal-containing gas may be RuO3 gas, RuO4 gas, RuF5 gas, or RuF6 gas.
  • the metal-containing gas may be a gas containing tungsten, molybdenum, or titanium and a halogen.
  • the metal - containing gas may be WF2 gas, WF4 gas, WF5 gas, WF6 gas, WCl2 gas, WCl4 gas, WCl5 gas, WCl6 gas, MoF4 gas, MoCl6 gas, TiCl4 gas, or the like.
  • the first process gas further includes an inert gas.
  • the inert gas may be, for example, a noble gas such as Ar gas, He gas, and Kr gas, or nitrogen gas.
  • a source RF signal is supplied to the lower electrode of the substrate support 11 and/or the upper electrode of the shower head 13. This generates a high-frequency electric field between the shower head 13 and the substrate support 11, and a first plasma is generated from the first processing gas in the plasma processing space 10s.
  • a bias signal does not need to be supplied to the lower electrode of the substrate support 11.
  • a bias signal may also be supplied to the lower electrode of the substrate support 11. In this case, the level (power level or voltage level) of the bias signal may be lower than the level of the bias signal supplied to the substrate support 11 in step ST12 or step ST3.
  • the bias signal may be a bias RF signal or a bias DC signal.
  • the temperature of the substrate support 11 or the substrate W may be controlled to the same temperature as the given temperature set in step ST11, or may be controlled to a different temperature (e.g., a temperature higher than the given temperature).
  • FIG. 7 is a diagram showing an example of the cross-sectional structure of the substrate W after the process of step ST2.
  • a metal-containing film MF is formed in the recess RC by the process of step ST2.
  • the metal-containing film MF is a film containing a metal M derived from the first process gas.
  • the metal-containing film MF is continuously formed from the top TP1 of the mask MK to the sidewall SS1 of the mask MK and the sidewall SS2 of the etching target film EF.
  • the metal-containing film MF may be formed on the entire sidewall SS2 of the etching target film EF, or may be formed on a part (e.g., the upper part) of the sidewall SS2. In one embodiment, the metal-containing film MF may be formed on the sidewall SS2 from the top of the recess RC toward the bottom BT in a bottom-down manner. The metal-containing film MF may provide protection for the sidewall SS2 on which the metal-containing film MF is formed during etching of the recess RC in step ST3.
  • Step ST3 In step ST3, the recess RC of the etching target film EF is etched. First, a second process gas containing HF gas is supplied from the gas supply unit 20 into the plasma processing space 10s.
  • the HF gas may have the largest flow rate (partial pressure) of the second process gas excluding the inert gas.
  • the flow rate of the HF gas may be 50 vol.% or more, 60 vol.% or more, 70 vol.% or more, 80 vol.% or more, 90 vol.% or more, or 95 vol.% or more with respect to the total flow rate of the second process gas (if the second process gas includes an inert gas, the flow rate of all gases excluding the inert gas).
  • the flow rate of the HF gas may be less than 100 vol.%, 99.5 vol.% or less, 98 vol.% or less, or 96 vol.% or less with respect to the total flow rate of the second process gas.
  • the flow rate of the HF gas is 70 vol.% or more and 96 vol.% or less with respect to the total flow rate of the second process gas.
  • the second process gas further comprises one or more gases selected from the group consisting of a phosphorus-containing gas, a carbon-containing gas, an oxygen-containing gas, a halogen-containing gas other than fluorine, and an inert gas.
  • the phosphorus-containing gas is a halogenated phosphorus gas.
  • the halogenated phosphorus gas may be, for example, a phosphorus fluoride gas containing fluorine as a halogen element, such as PF3 gas or PF5 gas.
  • the halogenated phosphorus gas may be a phosphorus chloride gas containing chlorine as a halogen element, such as PCl3 gas or PCl5 gas.
  • the halogenated phosphorus gas may be a gas containing bromine or iodine as a halogen element, such as PBr3 gas, PBr5 gas, or PI3 gas.
  • the halogenated phosphorus gas may be a gas containing two or more halogen elements, such as PClF2 gas, PCl2F gas, or PCl2F3 gas.
  • the halogenated phosphorus gas may be a phosphorus oxyfluoride gas or a phosphorus oxychloride gas.
  • the halogenated phosphorus gas may be POF3 gas, POCl3 gas, POF2Cl2 gas , POFCl2 gas, or POF2Cl gas.
  • the flow rate of the phosphorus-containing gas contained in the second process gas is 20 vol % or less, 10 vol % or less, or 5 vol % or less of the total flow rate of the second process gas.
  • the carbon-containing gas is a fluorocarbon gas and/or a hydrofluorocarbon gas .
  • the fluorocarbon gas may be, for example, at least one selected from the group consisting of CF4 gas, C2F2 gas, C2F4 gas , C3F6 gas , C3F8 gas , C4F6 gas, C4F8 gas, and C5F8 gas.
  • the hydrofluorocarbon gas may be , for example , at least one selected from the group consisting of CHF3 gas, CH2F2 gas , CH3F gas , C2HF5 gas, C2H2F4 gas , C2H3F3 gas , C2H4F2 gas , C3HF7 gas , C3H2F2 gas , C3H2F4 gas , C3H2F6 gas , C3H3F5 gas, C4H2F6 gas , C4H5F5 gas , C4H2F8 gas , C5H2F6 gas , C5H2F10 gas and C5H3F7 gas .
  • the carbon-containing gas is a linear gas having an unsaturated bond, such as C 3 F 6 (hexafluoropropene) gas, C 4 F 8 (octafluoro-1-butene, octafluoro-2-butene) gas, C 3 H 2 F 4 (1,3,3,3-tetrafluoropropene) gas, C 4 H 2 F 6 (trans-1,1,1,4,4,4-hexafluoro-2-butene) gas, C 4 F 8 O (pentafluoroethyl trifluorovinyl ether) gas, CF 3 COF gas (1,2,2,2-tetrafluoroethane-1-one), CHF 2 COF (difluoroacetic acid fluoride) gas, and COF 2 (carbonyl fluoride) gas.
  • C 3 F 6 hexafluoropropene
  • C 4 F 8 octafluoro-1-butene, octafluoro
  • the oxygen-containing gas is, for example, at least one gas selected from the group consisting of O 2 , CO, CO 2 , H 2 O, and H 2 O 2.
  • the oxygen-containing gas is an oxygen-containing gas other than H 2 O, for example, at least one gas selected from the group consisting of O 2 , CO, CO 2 , and H 2 O 2.
  • the flow rate of the oxygen-containing gas may be adjusted according to the flow rate of other gases (e.g., carbon-containing gas) contained in the second process gas.
  • the halogen-containing gas other than fluorine may be a chlorine-containing gas, a bromine-containing gas , and/or an iodine-containing gas.
  • the chlorine-containing gas may be at least one gas selected from the group consisting of Cl2 , SiCl2 , SiCl4 , CCl4 , SiH2Cl2 , Si2Cl6 , CHCl3 , SO2Cl2 , BCl3 , PCl3 , PCl5 , and POCl3 .
  • the bromine-containing gas may be at least one gas selected from the group consisting of Br2 , HBr, CBr2F2 , C2F5Br , PBr3 , PBr5 , POBr3 , and BBr3 .
  • the iodine-containing gas may be at least one gas selected from the group consisting of HI , CF3I , C2F5I , C3F7I , IF5 , IF7 , I2 , and PI3.
  • the halogen-containing gas other than fluorine may be at least one gas selected from the group consisting of Cl2 gas, Br2 gas, and HBr gas.
  • the halogen-containing gas other than fluorine is Cl2 gas or HBr gas.
  • the inert gas is a noble gas such as Ar gas, He gas, Kr gas, etc. and/or nitrogen gas.
  • the second process gas may contain a gas capable of generating hydrogen fluoride species (HF species) in the plasma in place of some or all of the HF gas.
  • HF species includes at least one of hydrogen fluoride gas, radicals, and ions.
  • the gas capable of generating HF species may be, for example, a hydrofluorocarbon gas.
  • the hydrofluorocarbon gas may have a carbon number of 2 or more, 3 or more, or 4 or more.
  • the hydrofluorocarbon gas is at least one selected from the group consisting of CH 2 F 2 gas, C 3 H 2 F 4 gas, C 3 H 2 F 6 gas, C 3 H 3 F 5 gas, C 4 H 2 F 6 gas, C 4 H 5 F 5 gas, C 4 H 2 F 8 gas, C 5 H 2 F 6 gas, C 5 H 2 F 10 gas, and C 5 H 3 F 7 gas.
  • the hydrofluorocarbon gas is at least one selected from the group consisting of CH 2 F 2 gas, C 3 H 2 F 4 gas, C 3 H 2 F 6 gas, and C 4 H 2 F 6 gas.
  • the gas capable of generating HF species may be, for example, a mixed gas containing a hydrogen source and a fluorine source.
  • the hydrogen source may be, for example, at least one selected from the group consisting of H2 gas, NH3 gas, H2O gas, H2O2 gas, and a hydrocarbon gas ( CH4 gas, C3H6 gas , etc.).
  • the fluorine source may be, for example, a fluorine-containing gas that does not contain carbon, such as NF3 gas, SF6 gas, WF6 gas, or XeF2 gas.
  • the fluorine source may also be a fluorine-containing gas that contains carbon, such as a fluorocarbon gas and a hydrofluorocarbon gas.
  • the fluorocarbon gas may be at least one selected from the group consisting of CF4 gas, C2F2 gas, C2F4 gas , C3F6 gas , C3F8 gas, C4F6 gas , C4F8 gas, and C5F8 gas .
  • the hydrofluorocarbon gas may be at least one selected from the group consisting of CHF3 gas, CH2F2 gas , CH3F gas , C2HF5 gas, and hydrofluorocarbon gases containing three or more C's ( C3H2F4 gas , C3H2F6 gas, C4H2F6 gas, etc.) .
  • the type of gas constituting the second processing gas and its flow rate may be constant or may be changed as the etching progresses.
  • a source RF signal is supplied to the lower electrode of the substrate support 11 and/or the upper electrode of the shower head 13. This generates a high-frequency electric field between the shower head 13 and the substrate support 11, and a second plasma is generated from the second processing gas in the plasma processing space 10s.
  • a bias signal may be supplied to the lower electrode of the substrate support 11. This attracts active species such as ions and radicals in the second plasma to the substrate W, and the recess RC of the film to be etched EF is further etched in the depth direction.
  • the bias signal may be a bias RF signal supplied from the second RF generating unit 31b.
  • the bias signal may be a bias DC signal supplied from the DC generating unit 32a.
  • the temperature of the substrate support 11 or the substrate W may be controlled to a given temperature set in step ST11.
  • FIG. 8 is a diagram showing an example of the cross-sectional structure of the substrate W during processing in step ST3.
  • the recess RC is further etched in the depth direction by the processing in step ST3.
  • a metal-containing film MF containing a metal M (ruthenium, tungsten, molybdenum, and/or titanium) is formed on the side wall SS2 of the recess RC in step ST2.
  • the metal-containing film MF containing the metal M has low reactivity with the active species of hydrogen fluoride in the second plasma.
  • the metal-containing film MF has a higher etching resistance to the second plasma than the film to be etched EF.
  • the metal-containing film MF functions as a protective film for the side wall SS2 in the etching in step ST3. This can prevent the side wall SS2 in the portion where the metal-containing film is formed from being etched in the width direction (left and right direction in FIG. 8) and spreading to cause bowing.
  • the metal-containing film MF when the metal-containing film MF is also formed on the mask MK, the metal-containing film MF also functions as a protective film for the mask MK. This can improve the etching selectivity of the film to be etched EF relative to the etching of the mask MK.
  • the stopping condition may be, for example, the etching time or the depth of the recess RC.
  • the aspect ratio of the recess RC at the end of the etching may be, for example, 20 or more, 30 or more, 40 or more, 50 or more, or 100 or more.
  • this method can prevent shape abnormalities from occurring due to etching.
  • steps ST2 and ST3 may be repeated. That is, steps ST2 and ST3 constitute one cycle, and the cycle may be repeated multiple times. In this case, the formation of the metal-containing film MF on the side wall SS2 of the recess RC and the etching of the recess RC in the depth direction are alternately repeated. This can further suppress bowing.
  • the second process gas used in step ST3 may further include a metal-containing gas containing a metal M.
  • the formation of the metal-containing film MF on the side wall SS2 of the recess RC and the etching of the recess RC in the depth direction proceed simultaneously. This can further suppress bowing.
  • step ST3 may be performed without performing step ST2, and a metal-containing gas containing metal M may be included in the second process gas used in step ST3.
  • a metal-containing gas containing metal M may be included in the second process gas used in step ST3.
  • step ST3 the formation of the metal-containing film MF on the side wall SS2 of the recess RC and the etching of the recess RC in the depth direction proceed simultaneously. This can suppress bowing.
  • step ST1 may further include a step of forming a carbon-containing film on the sidewall SS2 of the recess RC after forming the recess RC in step ST12.
  • the carbon-containing film may be formed by various methods, such as a plasma CVD method, a thermal CVD method, or an ALD method.
  • Metal M ruthenium, tungsten, molybdenum, and/or titanium
  • the formation of the metal-containing film MF on the sidewall SS2 of the recess RC can be promoted in step ST2 and in step ST3 according to the above-mentioned modified example.
  • An etching method performed in a plasma processing apparatus including a chamber comprising: (a) preparing a substrate, the substrate including a film to be etched having a recess, and a mask having an opening exposing the recess and disposed on the film to be etched; (b) forming a metal-containing film on a sidewall of the recess using a first plasma formed from a first process gas including a metal-containing gas, the metal-containing gas including at least one metal selected from the group consisting of ruthenium, tungsten, molybdenum, and titanium; (c) etching the film to be etched in the recess using a second plasma formed from a second process gas containing hydrogen fluoride gas.
  • An etching method performed in a plasma processing apparatus including a chamber comprising: (a) preparing a substrate, the substrate including a film to be etched having a recess, and a mask having an opening exposing the recess and disposed on the film to be etched; (b) forming a metal-containing film on a side wall of the recess and etching the film to be etched in the recess using plasma generated from a process gas containing a metal-containing gas and hydrogen fluoride gas, wherein the metal-containing gas contains at least one metal selected from the group consisting of ruthenium, tungsten, molybdenum, and titanium.
  • Appendix 10 The etching method according to any one of appendix 1 to appendix 9, wherein the film to be etched includes at least one selected from the group consisting of a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a silicon carbonitride film, and a polycrystalline silicon film, and a laminate film including at least two of these films.
  • a plasma processing apparatus including a chamber and a control unit,
  • the control unit is (a) providing a substrate in a chamber, the substrate including a film to be etched having a recess and a mask disposed over the film to be etched, the mask including an opening exposing the recess; (b) forming a metal-containing film on a sidewall of the recess in the chamber using a first plasma formed from a first process gas comprising a metal-containing gas, the metal-containing gas comprising at least one metal selected from the group consisting of ruthenium, tungsten, molybdenum, and titanium; and (c) controlling, in the chamber, to etch the target film in the recess using a second plasma formed from a second process gas including hydrogen fluoride gas.
  • a plasma processing apparatus including a chamber and a control unit,
  • the control unit is (a) controlling a preparation of a substrate, the substrate including a film to be etched having a recess, and a mask disposed on the film to be etched, the mask having an opening exposing the recess; (b) controlling the formation of a metal-containing film on a side wall of the recess and the etching target film in the recess using plasma generated from a process gas containing a metal-containing gas and hydrogen fluoride gas, wherein the metal-containing gas contains at least one metal selected from the group consisting of ruthenium, tungsten, molybdenum, and titanium.

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WO2022234805A1 (ja) * 2021-05-06 2022-11-10 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム
JP2023002460A (ja) * 2021-06-22 2023-01-10 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP7257088B1 (ja) * 2022-03-24 2023-04-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム

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