JP7785422B2 - エッチング方法及びプラズマ処理装置 - Google Patents

エッチング方法及びプラズマ処理装置

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Publication number
JP7785422B2
JP7785422B2 JP2025513818A JP2025513818A JP7785422B2 JP 7785422 B2 JP7785422 B2 JP 7785422B2 JP 2025513818 A JP2025513818 A JP 2025513818A JP 2025513818 A JP2025513818 A JP 2025513818A JP 7785422 B2 JP7785422 B2 JP 7785422B2
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JP
Japan
Prior art keywords
film
gas
metal
substrate
recess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2025513818A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024214414A1 (https=
JPWO2024214414A5 (https=
Inventor
仙善 有馬
嘉英 木原
幕樹 戸村
圭恵 ▲高▼橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JPWO2024214414A1 publication Critical patent/JPWO2024214414A1/ja
Publication of JPWO2024214414A5 publication Critical patent/JPWO2024214414A5/ja
Priority to JP2025211379A priority Critical patent/JP2026020408A/ja
Application granted granted Critical
Publication of JP7785422B2 publication Critical patent/JP7785422B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP2025513818A 2023-04-13 2024-02-29 エッチング方法及びプラズマ処理装置 Active JP7785422B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025211379A JP2026020408A (ja) 2023-04-13 2025-12-01 エッチング方法及びプラズマ処理装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023065637 2023-04-13
JP2023065637 2023-04-13
PCT/JP2024/007472 WO2024214414A1 (ja) 2023-04-13 2024-02-29 エッチング方法及びプラズマ処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025211379A Division JP2026020408A (ja) 2023-04-13 2025-12-01 エッチング方法及びプラズマ処理装置

Publications (3)

Publication Number Publication Date
JPWO2024214414A1 JPWO2024214414A1 (https=) 2024-10-17
JPWO2024214414A5 JPWO2024214414A5 (https=) 2025-10-29
JP7785422B2 true JP7785422B2 (ja) 2025-12-15

Family

ID=93059469

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2025513818A Active JP7785422B2 (ja) 2023-04-13 2024-02-29 エッチング方法及びプラズマ処理装置
JP2025211379A Pending JP2026020408A (ja) 2023-04-13 2025-12-01 エッチング方法及びプラズマ処理装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025211379A Pending JP2026020408A (ja) 2023-04-13 2025-12-01 エッチング方法及びプラズマ処理装置

Country Status (6)

Country Link
US (1) US20260033265A1 (https=)
JP (2) JP7785422B2 (https=)
KR (1) KR20250174655A (https=)
CN (1) CN120883336A (https=)
TW (1) TW202443688A (https=)
WO (1) WO2024214414A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019207911A (ja) 2018-05-28 2019-12-05 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置
WO2022234805A1 (ja) 2021-05-06 2022-11-10 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6373150B2 (ja) 2014-06-16 2018-08-15 東京エレクトロン株式会社 基板処理システム及び基板処理方法
JP6883495B2 (ja) * 2017-09-04 2021-06-09 東京エレクトロン株式会社 エッチング方法
JP7422557B2 (ja) * 2019-02-28 2024-01-26 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7336365B2 (ja) * 2019-11-19 2023-08-31 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置
US20230298896A1 (en) * 2021-02-24 2023-09-21 Lam Research Corporation Metal-based liner protection for high aspect ratio plasma etch
JP7603634B2 (ja) * 2021-06-22 2024-12-20 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP7257088B1 (ja) * 2022-03-24 2023-04-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019207911A (ja) 2018-05-28 2019-12-05 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置
WO2022234805A1 (ja) 2021-05-06 2022-11-10 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム

Also Published As

Publication number Publication date
JPWO2024214414A1 (https=) 2024-10-17
KR20250174655A (ko) 2025-12-12
WO2024214414A1 (ja) 2024-10-17
US20260033265A1 (en) 2026-01-29
CN120883336A (zh) 2025-10-31
JP2026020408A (ja) 2026-02-06
TW202443688A (zh) 2024-11-01

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