JPWO2024214414A1 - - Google Patents
Info
- Publication number
- JPWO2024214414A1 JPWO2024214414A1 JP2025513818A JP2025513818A JPWO2024214414A1 JP WO2024214414 A1 JPWO2024214414 A1 JP WO2024214414A1 JP 2025513818 A JP2025513818 A JP 2025513818A JP 2025513818 A JP2025513818 A JP 2025513818A JP WO2024214414 A1 JPWO2024214414 A1 JP WO2024214414A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
- H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
- H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0421—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025211379A JP2026020408A (ja) | 2023-04-13 | 2025-12-01 | エッチング方法及びプラズマ処理装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023065637 | 2023-04-13 | ||
| JP2023065637 | 2023-04-13 | ||
| PCT/JP2024/007472 WO2024214414A1 (ja) | 2023-04-13 | 2024-02-29 | エッチング方法及びプラズマ処理装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025211379A Division JP2026020408A (ja) | 2023-04-13 | 2025-12-01 | エッチング方法及びプラズマ処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2024214414A1 true JPWO2024214414A1 (https=) | 2024-10-17 |
| JPWO2024214414A5 JPWO2024214414A5 (https=) | 2025-10-29 |
| JP7785422B2 JP7785422B2 (ja) | 2025-12-15 |
Family
ID=93059469
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025513818A Active JP7785422B2 (ja) | 2023-04-13 | 2024-02-29 | エッチング方法及びプラズマ処理装置 |
| JP2025211379A Pending JP2026020408A (ja) | 2023-04-13 | 2025-12-01 | エッチング方法及びプラズマ処理装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025211379A Pending JP2026020408A (ja) | 2023-04-13 | 2025-12-01 | エッチング方法及びプラズマ処理装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20260033265A1 (https=) |
| JP (2) | JP7785422B2 (https=) |
| KR (1) | KR20250174655A (https=) |
| CN (1) | CN120883336A (https=) |
| TW (1) | TW202443688A (https=) |
| WO (1) | WO2024214414A1 (https=) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019207911A (ja) * | 2018-05-28 | 2019-12-05 | 東京エレクトロン株式会社 | 膜をエッチングする方法及びプラズマ処理装置 |
| JP2021082701A (ja) * | 2019-11-19 | 2021-05-27 | 東京エレクトロン株式会社 | 膜をエッチングする方法及びプラズマ処理装置 |
| WO2022234805A1 (ja) * | 2021-05-06 | 2022-11-10 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理システム |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6373150B2 (ja) | 2014-06-16 | 2018-08-15 | 東京エレクトロン株式会社 | 基板処理システム及び基板処理方法 |
| JP6883495B2 (ja) * | 2017-09-04 | 2021-06-09 | 東京エレクトロン株式会社 | エッチング方法 |
| JP7422557B2 (ja) * | 2019-02-28 | 2024-01-26 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
| US20230298896A1 (en) * | 2021-02-24 | 2023-09-21 | Lam Research Corporation | Metal-based liner protection for high aspect ratio plasma etch |
| JP7603634B2 (ja) * | 2021-06-22 | 2024-12-20 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| JP7257088B1 (ja) * | 2022-03-24 | 2023-04-13 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理システム |
-
2024
- 2024-02-29 KR KR1020257037367A patent/KR20250174655A/ko active Pending
- 2024-02-29 CN CN202480023485.8A patent/CN120883336A/zh active Pending
- 2024-02-29 WO PCT/JP2024/007472 patent/WO2024214414A1/ja not_active Ceased
- 2024-02-29 JP JP2025513818A patent/JP7785422B2/ja active Active
- 2024-03-06 TW TW113108118A patent/TW202443688A/zh unknown
-
2025
- 2025-10-06 US US19/350,098 patent/US20260033265A1/en active Pending
- 2025-12-01 JP JP2025211379A patent/JP2026020408A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019207911A (ja) * | 2018-05-28 | 2019-12-05 | 東京エレクトロン株式会社 | 膜をエッチングする方法及びプラズマ処理装置 |
| JP2021082701A (ja) * | 2019-11-19 | 2021-05-27 | 東京エレクトロン株式会社 | 膜をエッチングする方法及びプラズマ処理装置 |
| WO2022234805A1 (ja) * | 2021-05-06 | 2022-11-10 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理システム |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7785422B2 (ja) | 2025-12-15 |
| KR20250174655A (ko) | 2025-12-12 |
| WO2024214414A1 (ja) | 2024-10-17 |
| US20260033265A1 (en) | 2026-01-29 |
| CN120883336A (zh) | 2025-10-31 |
| JP2026020408A (ja) | 2026-02-06 |
| TW202443688A (zh) | 2024-11-01 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250828 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250828 |
|
| A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20250828 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20251002 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20251024 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20251201 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7785422 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |