WO2024180577A1 - 複合ビーム装置 - Google Patents

複合ビーム装置 Download PDF

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Publication number
WO2024180577A1
WO2024180577A1 PCT/JP2023/006908 JP2023006908W WO2024180577A1 WO 2024180577 A1 WO2024180577 A1 WO 2024180577A1 JP 2023006908 W JP2023006908 W JP 2023006908W WO 2024180577 A1 WO2024180577 A1 WO 2024180577A1
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WO
WIPO (PCT)
Prior art keywords
ion beam
beam device
gas
composite
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2023/006908
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English (en)
French (fr)
Japanese (ja)
Inventor
洋 山本
弘 大庭
靖孝 大塚
安彦 杉山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Priority to JP2025503213A priority Critical patent/JPWO2024180577A1/ja
Priority to PCT/JP2023/006908 priority patent/WO2024180577A1/ja
Publication of WO2024180577A1 publication Critical patent/WO2024180577A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching

Definitions

  • the present invention relates to a composite beam device that includes a focused ion beam device, a scanning electron microscope, and a gas ion beam column.
  • a known method for analyzing the internal structure of samples such as semiconductor devices and for three-dimensional observation is a sample cross-section processing and observation method that uses a composite beam device equipped with a focused ion beam (FIB) column and an electron beam (EB) column to perform cross-section processing using an FIB and then observe the cross-section using a scanning electron microscope (SEM).
  • FIB focused ion beam
  • EB electron beam
  • Patent Document 1 describes a charged particle beam device that includes a gallium ion beam column, an electron beam column that irradiates an electron beam toward a sample, and a gas ion beam, the gas ion beam having a beam diameter larger than the maximum diameter of the cross section of the sample.
  • Patent Document 1 makes it possible to perform finishing processing of the cross section of a sample and obtain highly accurate SEM images of the cross section of the sample efficiently and in a short time.
  • Patent document 2 also describes a technology in which the axis along which the ion beam is extracted and the axis along which the ion beam is irradiated onto the sample are tilted to prevent neutron impurities or gas neutral molecules from reaching the sample.
  • the object of the present invention is to realize a composite beam device that can remove neutral particles generated in a gas ion source and can reduce the size of the gas ion beam tube.
  • the present invention is configured as follows:
  • the low-acceleration gas ion beam device includes a gas ion source, an ion beam deflection unit connected to the gas ion source, and an ion beam housing connected to the ion beam deflection unit via a bent portion, and the ion beam deflection unit and the ion beam housing are connected to each other at an angle via the bent portion.
  • the present invention makes it possible to realize a composite beam device that can remove neutral particles generated in a gas ion source and also enables the miniaturization of the gas ion beam tube.
  • FIG. 1 is a schematic diagram showing an overall configuration of a composite beam device to which an embodiment of the present invention is applied;
  • FIG. 2 is a schematic diagram of an embodiment, illustrating a portion of the composite beam device shown in FIG. 1.
  • FIG. 2 is a diagram showing the internal configuration of a gas ion beam column 18.
  • FIG. 1 is a schematic diagram showing the overall configuration of a composite beam device 10 to which one embodiment of the present invention is applied.
  • the composite beam device 10 includes a sample chamber 11 capable of maintaining a vacuum state inside, and a stage 12 capable of fixing a sample stage 13 for placing a sample S inside the sample chamber 11.
  • the composite beam device 10 is equipped with a gallium ion beam tube 14 (focused ion beam device) that irradiates a gallium ion beam toward an irradiation target, for example, a sample S, within a predetermined irradiation area (i.e., scanning range) inside the sample chamber 11.
  • the gallium ion beam tube 14 is equipped with a gallium source (not shown in Figure 1) that uses liquid gallium or the like.
  • a gallium ion beam (FIB) with a beam diameter of, for example, 1 ⁇ m or less is irradiated from the front end 14a of the gallium ion beam tube, which is the emission end of the gallium ion beam tube 14.
  • FIB gallium ion beam
  • the acceleration voltage of the gallium ion beam column 14 is 50V to 5000V.
  • the composite beam device 10 is equipped with an electron beam column 15 (electron beam device) that irradiates an electron beam EB toward an irradiation target, such as a sample S, within a predetermined irradiation area inside the sample chamber 11.
  • an electron beam column 15 electron beam device
  • the composite beam device 10 also includes a secondary electron detector 16 that detects secondary electrons generated from the sample S due to irradiation with the electron beam EB.
  • the secondary electron detector 16 detects the intensity (i.e., the amount of secondary electrons) of secondary charged particles (secondary electrons) emitted from an irradiated target such as the sample S when the target is irradiated with the electron beam, and outputs information on the detected amount of secondary electrons.
  • the secondary electron detector 16 is disposed inside the sample chamber 11 at a position where the amount of secondary electrons can be detected, for example, at a position diagonally above the irradiation target, such as the sample S, in the irradiation area.
  • the composite beam device 10 is equipped with a gas ion beam column 18 (low acceleration gas ion beam device) that irradiates a gas ion beam toward an irradiation target, such as a sample S, within a predetermined irradiation area inside the sample chamber 11.
  • a gas ion beam column 18 low acceleration gas ion beam device
  • irradiation target such as a sample S
  • an argon ion beam using argon, a rare gas is used as the gas ion beam.
  • the charged particle beam device 10 is equipped with a gas gun 17 that supplies gas to the surface of the irradiation target, for example, the sample S.
  • the gas gun 17 is equipped with a nozzle, for example, with an outer diameter of about 200 ⁇ m.
  • the gas gun 17 supplies, for example, an etching gas for selectively promoting etching of the sample by the gallium ion beam, and a deposition gas for forming a deposition film of a deposit of metal or insulator on the surface of the sample S.
  • the composite beam device 10 includes a control unit 21, a display device 22, and an input device 23.
  • the control unit 21 is a control means that controls the gallium ion beam tube 14, the electron beam tube 15, the secondary electron detector 16, the gas ion beam tube 18, the gas gun 17, and the like that constitute the composite beam device 10.
  • the gallium ion beam tube 14 irradiates the sample S with a gallium ion beam from the front end 14a of the gallium ion beam tube.
  • the electron beam tube 15 also irradiates the sample S with the electron beam EB from the front end 15a of the electron beam tube.
  • the gas ion beam column 18 also irradiates the sample S with an argon ion beam GB from the front end 18a of the gas ion beam column.
  • the beam optical axes of the gallium ion beam, electron beam EB, and argon ion beam GB intersect at intersection point P.
  • the control unit 21 is composed of, for example, a personal computer and an interface.
  • the display device 22 displays an image of the sample S based on the secondary electrons detected by the secondary electron detector 16.
  • commands, data, etc. are input to the control unit 21 via an input device 23.
  • the composite beam device 10 is also provided with a needle mechanism (not shown) for moving the sample S placed on the stage 12.
  • FIG. 2 is a schematic diagram of one embodiment, and is an explanatory diagram of a portion of the composite beam device 10 shown in FIG. 1.
  • the gas ion beam lens barrel 18 includes a gas ion source 30, an ion beam deflection section 31, and an ion beam housing 32.
  • a bent section 26 is formed midway between the ion beam deflection section 31 and the ion beam housing 32.
  • the center line of the ion beam deflection section 31 and the center line of the ion beam housing 32 are not in a straight line, but form an angle. In other words, the center line of the ion beam deflection section 31 and the center line of the ion beam housing 32 intersect at the bent section 26.
  • the angle between the center line of the ion beam deflection unit 31 and the center line of the ion beam housing 32 is an angle for separating the ion beam 28 and the neutral particles 29, and is an angle at which the neutral particles 29 can be separated from the ion beam and neutral particles 27.
  • the line segment formed by the neutral particles 29 is a line segment that extends in the same direction as the line segment formed by the ion beam and neutral particles 27.
  • the line segment formed by the ion beam 28 extends in a different direction from the line segment formed by the ion beam and neutral particles 27.
  • the ion beam deflection section 31 and the ion beam housing 32 are connected to each other at an angle via the bend section 26.
  • the ion beam and neutral particles 27 generated by the gas ion source 30 are separated into an ion beam 28 and neutrons 29 at the bending portion 26.
  • the ion beam 28 is focused by the condenser lens 2 (described later), then bent by the blanker deflector 3 installed in the bending section 26, passes through the downstream objective lens 7, and is focused by the scanning deflector 8 (described later) and scanned on the sample S.
  • a voltage is applied to the blanker deflector 3, as described later. If no voltage is applied to the blanker deflector 3 in the bending section 26, the ion beam cannot pass through the bending section 26 either, so the blanker deflector 3 also functions as a blanker that stops the ion beam.
  • the gas ion beam column (low acceleration gas ion beam device) 18 is set to a lower energy than the gallium ion beam column (focused ion beam device) 14.
  • Figure 3 shows the internal structure of the gas ion beam column 18.
  • the gas ion beam column 18 in one embodiment employs a boosting optical system that accelerates ions between two lenses in order to improve processing performance at low acceleration (less than 1 keV).
  • the boosting optical system accelerates ions between the condenser lens 2 and the objective lens 7 when the acceleration voltage is low.
  • the ion beam emitted from the ion source 1 is converged by the condenser lens 2 and deflected by the blanker deflector 3 arranged in the bending section 26, and the neutral particles 29 and the ion beam 28 are separated by the blanking aperture 4 arranged in the acceleration tube 5.
  • the beam current is adjusted to an appropriate value by the beam limiting aperture 6.
  • the voltage of the condenser lens 2 is changed, and the beam convergence position is appropriately changed.
  • the ion beam 28 passes through the objective lens 7, is focused on the sample S, is scanned by the scanning deflector 8, and is deflected to the desired position and irradiated.
  • the blanker deflector 3 and blanking aperture 4 are installed in the acceleration tube 5 that accelerates the ions.
  • a voltage proportional to the energy of the ions must be applied.
  • the voltage proportional to the ion energy depends on both the voltage of the acceleration tube 5 (the voltage from the boosting power supply 24) and the ion acceleration voltage.
  • voltage is supplied to the blanker deflector 3 from a low-voltage blanking power supply 25 that is floated by a boosting power supply 24.
  • the blanking power supply 25 supplies voltage to the blanker deflector 3 together with the boosting power supply 24.
  • a blanker deflector 3 is used in which the electrostatic deflector at the bending portion 26 has a blanker function, so only the space for one deflector is required, allowing the gas ion beam tube 18 to be made compact.
  • the blanker deflector 3 uses parallel plates, parallel plates (shaped like cut concentric cylinders), multi-pole electrodes, etc. to improve symmetry. This makes it possible to suppress distortion of the beam shape after deflection, and to obtain a symmetrical round beam shape on the sample.
  • a boosting voltage is applied by the boosting power supply 24.
  • the present invention is configured as described above, making it possible to realize a composite beam device that can remove neutral particles generated in a gas ion source and that can reduce the size of the gas ion beam tube.
  • 1 Ion source (gas ion source), 2: Condenser lens, 3: Blanker deflector, 4: Blanking aperture, 5: Acceleration tube, 6: Beam limiting aperture, 7: Objective lens, 8: Scanning deflector, 10: Composite beam device, 11: Sample chamber, 12: Stage (sample stage), 13: Sample stand, 14: Gallium ion beam tube (focused ion beam device), 14a: Front end of gallium ion beam tube, 15: Electron beam tube (electron beam device), 15a: Front end of electron beam tube, 16: Secondary electron detector , 17...Gas gun, 18...Gas ion beam column (low acceleration gas ion beam device), 18a...Front end of gas ion beam column, 21...Control unit, 22...Display unit, 23...Input device, 24...Boosting power supply, 25...Blanking power supply, 26...Bending unit, 27...Ion beam + neutron beam, 28...Ion beam, 29...Neutron beam, 30...Gas

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electron Sources, Ion Sources (AREA)
PCT/JP2023/006908 2023-02-27 2023-02-27 複合ビーム装置 Ceased WO2024180577A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2025503213A JPWO2024180577A1 (https=) 2023-02-27 2023-02-27
PCT/JP2023/006908 WO2024180577A1 (ja) 2023-02-27 2023-02-27 複合ビーム装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/006908 WO2024180577A1 (ja) 2023-02-27 2023-02-27 複合ビーム装置

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5127148B2 (ja) * 2006-03-16 2013-01-23 株式会社日立ハイテクノロジーズ イオンビーム加工装置
JP2013182684A (ja) * 2012-02-29 2013-09-12 Toshiba Corp 試料加工装置および試料加工方法
JP2016072248A (ja) * 2014-09-30 2016-05-09 エフ・イ−・アイ・カンパニー 荷電粒子ビーム・システム用のシケイン・ブランカ・アセンブリおよびその使用方法
JP2019145328A (ja) * 2018-02-20 2019-08-29 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置、試料加工観察方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5127148B2 (ja) * 2006-03-16 2013-01-23 株式会社日立ハイテクノロジーズ イオンビーム加工装置
JP2013182684A (ja) * 2012-02-29 2013-09-12 Toshiba Corp 試料加工装置および試料加工方法
JP2016072248A (ja) * 2014-09-30 2016-05-09 エフ・イ−・アイ・カンパニー 荷電粒子ビーム・システム用のシケイン・ブランカ・アセンブリおよびその使用方法
JP2019145328A (ja) * 2018-02-20 2019-08-29 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置、試料加工観察方法

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