WO2024142895A1 - Élément et dispositif de transfert de chaleur - Google Patents

Élément et dispositif de transfert de chaleur Download PDF

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Publication number
WO2024142895A1
WO2024142895A1 PCT/JP2023/044322 JP2023044322W WO2024142895A1 WO 2024142895 A1 WO2024142895 A1 WO 2024142895A1 JP 2023044322 W JP2023044322 W JP 2023044322W WO 2024142895 A1 WO2024142895 A1 WO 2024142895A1
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metal
heat
acid
mass
conductive member
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PCT/JP2023/044322
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English (en)
Japanese (ja)
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健夫 木戸
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富士フイルム株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating

Definitions

  • the present invention relates to a thermally conductive member and device.
  • a heat dissipation member e.g., a heat spreader, a heat sink, a thermal diffusion sheet, etc.
  • a method for bonding a heat source (heat generating element) of the device and the heat dissipation member with a thermally conductive member in order to efficiently transfer heat to the heat dissipation member.
  • the present invention aims to provide a thermally conductive member that maintains good adhesion to a heat dissipation member even after being exposed to repeated heating and cooling processes, and a device that uses the same.
  • a device comprising a heat generating body, the heat conducting member according to any one of [1] to [5], and a heat dissipating member.
  • the device according to [6] comprising a heat generating element, a thermally conductive member, and a heat dissipating member adjacent to each other in this order.
  • the heat conductive member of the present invention preferably satisfies at least one of the following requirements 1-1 and 2-1, and more preferably satisfies at least one of the following requirements 1-2 and 2-2. Furthermore, it is more preferable that the heat conductive member of the present invention satisfy both of the following requirements 1-1 and 2-1, and it is particularly preferable that the heat conductive member of the present invention satisfy both of the following requirements 1-2 and 2-2. Furthermore, the thermally conductive member of the present invention preferably contains more than 50 volume % and not more than 99 volume % of metal nanowires, for the reason that this provides better adhesion to the heat dissipation member. Requirement 1-1: The metal nanowires are contained at 45 to 90 volume %.
  • Requirement 2-1 The metal nanowires are contained in an amount of 75 to 99 mass %.
  • Requirement 1-2 The metal nanowires are contained at 50 to 80 volume %.
  • Requirement 2-2 The metal nanowires are contained in an amount of 80 to 98 mass %.
  • the metal nanowires contained in the heat conducting member of the present invention are conductive substances made of metal, having a needle-like or thread-like shape, and having a diameter on the order of nanometers.
  • the metal nanowires may be either straight or curved.
  • the material of the metal nanowires is not particularly limited as long as it contains a metal, and may contain components other than metals in addition to the metal.
  • the specific surface area per unit mass of the metal nanowires is preferably 100 to 50,000 m 2 /kg, more preferably more than 100 m 2 /kg and not more than 50,000 m 2 /kg, even more preferably more than 1,000 m 2 /kg and not more than 50,000 m 2 /kg, particularly preferably more than 2,000 m 2 /kg and not more than 30,000 m 2 /kg, and most preferably more than 3,000 m 2 /kg and not more than 20,000 m 2 /kg.
  • the specific surface area per unit mass of the obtained metal nanowires can be measured by known analytical methods, but in the present invention, a value measured by a krypton gas adsorption method is used.
  • the metal constituting the above-mentioned metal nanowires is not particularly limited, but it is preferable that the metal be a material having an electrical resistivity of 10 3 ⁇ cm or less, and specific examples of such metals include gold (Au), silver (Ag), copper (Cu), aluminum (Al), titanium (Ti), nickel (Ni), cobalt (Co), etc.
  • Au gold
  • Ag silver
  • Cu copper
  • Al aluminum
  • Ti titanium
  • Ni nickel
  • Co cobalt
  • at least one metal selected from the group consisting of Ag and Cu is preferable, and Cu is more preferable, because of its particularly high thermal conductivity.
  • the diameter (arithmetic mean value) of the metal nanowires is preferably 10 to 200 nm, more preferably 10 to 100 nm, and even more preferably 10 to 50 nm.
  • the length (arithmetic mean value) of the metal nanowires is preferably 0.3 to 300 ⁇ m, more preferably 0.5 to 200 ⁇ m, and even more preferably 1 ⁇ m to 100 ⁇ m.
  • the diameter and length of the metal nanowire can be determined, for example, by observing an SEM image at a magnification of 100 to 500 times using a field emission scanning electron microscope (FE-SEM).
  • the diameter and length of the metal nanowire are determined by observing 10 metal nanowires randomly selected from an SEM image taken at a magnification of 100 to 500 times, measuring their diameters and lengths, and performing this in 10 fields of view, and averaging the measured values of the diameters and lengths of a total of 100 metal nanowires.
  • the ratio of the length to the diameter (length/diameter) of the metal nanowire (hereinafter also abbreviated as "aspect ratio”) is preferably 10 or more, and more preferably 100 to 1000.
  • the surface of a valve metal substrate 1 is anodized to form an anodized film 3 having pores (micropores) 2 on the surface of the valve metal substrate 1.
  • the pores 2 are filled with a metal 4.
  • the isolation step the filled metal 4 is isolated from the anodized film 3 and the valve metal substrate 1.
  • the embodiment shown in Fig. 1D shows the state in which the isolated metal 5 obtained in the isolation step is collected (a part of the isolated metal is adhered).
  • metal nanowires 10 in which the isolated metal 5 is crushed can be obtained.
  • the valve metal substrate used in the manufacturing method of the present invention is not particularly limited as long as it is a substrate containing a valve metal.
  • the valve metal include aluminum, tantalum, niobium, titanium, hafnium, zirconium, zinc, tungsten, bismuth, antimony, etc.
  • aluminum is preferable because it has good dimensional stability and is relatively inexpensive. Therefore, in the manufacturing method of the present invention, it is preferable to use a base material containing aluminum (hereinafter, abbreviated as "aluminum base material”) as the valve metal base material.
  • the aluminum substrate is not particularly limited, and specific examples include pure aluminum plates; alloy plates containing aluminum as the main component and trace amounts of other elements; substrates in which high-purity aluminum is vapor-deposited onto low-purity aluminum (e.g., recycled materials); substrates in which the surfaces of silicon wafers, quartz, glass, etc. are coated with high-purity aluminum by methods such as vapor deposition and sputtering; and resin substrates laminated with aluminum.
  • the surface of the valve metal substrate that is anodized in the anodizing process described below preferably has a valve metal purity of 99.5% by mass or more, more preferably 99.9% by mass or more, and even more preferably 99.99% by mass or more.
  • the valve metal purity is within the above-mentioned range, the arrangement of the through passages is sufficiently regular.
  • the surface of the valve metal base material that is to be anodized in the anodizing step described below is preferably previously subjected to a heat treatment, a degreasing treatment and a mirror finish treatment.
  • the heat treatment, degreasing treatment and mirror finish treatment can be the same as those described in paragraphs [0044] to [0054] of JP-A-2008-270158.
  • the anodizing step is a step of forming a porous anodized film on the surface of the valve metal base by subjecting the surface of the valve metal base to an anodizing treatment.
  • the anodizing treatment carried out in the anodizing step can be a conventionally known method, but it is preferable to use a self-ordering method or a constant voltage treatment because this makes it possible to isolate the filled metal with less variation in diameter in the isolation step described below.
  • the self-ordering method of the anodizing treatment and the constant voltage treatment can be the same as the treatments described in paragraphs [0056] to [0108] and in FIG. 3 of JP-A-2008-270158.
  • the anodizing treatment can be carried out, for example, by passing a current through a valve metal substrate as an anode in a solution having an acid concentration of 1 to 10% by mass.
  • the solution used in the anodizing treatment is preferably an acid solution, more preferably sulfuric acid, phosphoric acid, chromic acid, oxalic acid, sulfamic acid, benzenesulfonic acid, amidosulfonic acid, glycolic acid, tartaric acid, malic acid, citric acid, etc., and among these, sulfuric acid, phosphoric acid, and oxalic acid are further preferable, and oxalic acid is particularly preferable.
  • These acids can be used alone or in combination of two or more kinds.
  • the conditions for the anodizing treatment vary depending on the electrolyte used and cannot be determined in general, but generally, the electrolyte concentration is preferably 0.1 to 20% by mass, the solution temperature is -10 to 30°C, the current density is 0.01 to 20 A/ dm2 , the voltage is 3 to 300 V, and the electrolysis time is 0.5 to 30 hours, more preferably the electrolyte concentration is 0.5 to 15% by mass, the solution temperature is -5 to 25°C, the current density is 0.05 to 15 A/ dm2 , the voltage is 5 to 250 V, and the electrolysis time is 1 to 25 hours, and even more preferably the electrolyte concentration is 1 to 10% by mass, the solution temperature is 0 to 20°C, the current density is 0.1 to 10 A/ dm2 , the voltage is 10 to 200 V, and the electrolysis time is 2 to 20 hours.
  • the thickness of the anodized film formed by the anodization process is not particularly limited, but from the viewpoint of adjusting the length of the metal nanowires, it is preferably 0.3 to 300 ⁇ m, more preferably 0.5 to 120 ⁇ m, and even more preferably 0.5 to 100 ⁇ m.
  • the thickness of the anodic oxide film can be calculated as the average value of 10 measurements taken by cutting the anodic oxide film in the thickness direction with a focused ion beam (FIB), taking surface photographs (magnification: 50,000 times) of the cross section with a field emission scanning electron microscope (FE-SEM).
  • the density of the pores formed by the anodization process is not particularly limited, but is preferably 2 million pores/ mm2 or more, more preferably 10 million pores/ mm2 or more, even more preferably 50 million pores/mm2 or more, and particularly preferably 100 million pores/ mm2 or more.
  • the density of the pores can be measured and calculated by the method described in paragraphs [0168] and [0169] of JP-A-2008-270158.
  • the metal filling step is a step of filling the inside of the pores with a metal after the anodization step.
  • Methods for filling the interior of the pores with the metal include, for example, methods similar to those described in paragraphs [0123] to [0126] and [ Figure 4] of JP 2008-270158 A.
  • the metal filling step includes a plating step, because this makes it difficult for the produced metal nanowires to contain hollow portions.
  • an electrolytic plating method as a method for filling the inside of the pores with the metal, and for example, an electrolytic plating method or an electroless plating method can be used.
  • an electrolytic plating method or an electroless plating method can be used.
  • the manufacturing method of the present invention when filling metal by electrolytic plating, it is necessary to provide a rest period during pulse electrolysis or constant potential electrolysis.
  • the rest period must be 10 seconds or more, and is preferably 30 to 60 seconds. It is also preferable to apply ultrasonic waves to promote stirring of the electrolyte.
  • the electrolysis voltage is usually 20 V or less, and preferably 10 V or less, but it is preferable to measure the deposition potential of the target metal in the electrolyte solution to be used in advance and perform constant-potential electrolysis at a potential within +1 V of that potential.
  • a device that can also be used with cyclic voltammetry, and a potentiostat device manufactured by Solartron, BAS, Hokuto Denko, IVIUM, etc. can be used.
  • the plating solution a conventionally known plating solution can be used. Specifically, when copper is precipitated, an aqueous solution of copper sulfate is generally used, and the concentration of the copper sulfate is preferably 1 to 300 g/L, and more preferably 100 to 200 g/L. Precipitation can be promoted by adding hydrochloric acid to the electrolyte. In this case, the concentration of hydrochloric acid is preferably 10 to 20 g/L. When gold is to be deposited, it is preferable to use a sulfuric acid solution of gold tetrachloride and to perform plating by AC electrolysis.
  • the electrolytic plating method a treatment method in which AC electrolytic plating and DC electrolytic plating are combined in this order.
  • a voltage is applied modulated into a sine wave at a predetermined frequency.
  • the waveform of the voltage modulation is not limited to a sine wave, and may be, for example, a square wave, a triangular wave, a sawtooth wave, or an inverse sawtooth wave.
  • the DC electrolytic plating method can appropriately use the treatment methods in the electrolytic plating method described above.
  • the metal filling step is a process that is performed on the region from the bottom of the hole to halfway through the opening, out of the entire region from the bottom of the hole to the opening.
  • the isolation step is a step of isolating the filled metal from the anodized film and the valve metal substrate after the metal filling step.
  • the method of isolating the filled metal from the anodized film and the valve metal base material is not particularly limited, and for example, the method of removing (for example, dissolving, peeling, etc.) the anodized film and the valve metal base material and isolating the filled metal can be preferably mentioned.
  • the embodiment after the above-mentioned isolation process also includes, for example, the embodiment in which the filled metal is dispersed in an isolated state in the treatment liquid used in the dissolution process (dissolution treatment) described later.
  • the method for removing the anodic oxide film and the valve metal substrate is not particularly limited, and may be, for example, by polishing.
  • the isolation process includes a dissolution process, that is, that at least a portion of the anodic oxide film and the valve metal substrate is removed by a dissolution process.
  • the isolation process includes a one-step removal process of removing the anodic oxide film and the valve metal substrate, and it is more preferable that the removal of the anodic oxide film is a process in which the anodic oxide film is removed by a dissolution treatment.
  • the isolation step may include a two-step removal step of removing the valve metal base material and then removing the anodic oxide film, and in this case, it is more preferable that both of the two removal steps are performed by dissolution treatment.
  • the removal of the valve metal substrate is preferably carried out by a dissolution treatment using a treatment liquid which does not easily dissolve the anodized film but easily dissolves the valve metal.
  • the dissolution rate of such a treatment solution for valve metal is preferably 1 ⁇ m/min or more, more preferably 3 ⁇ m/min or more, and even more preferably 5 ⁇ m/min or more.
  • the dissolution rate of anodized film is preferably 0.1 nm/min or less, more preferably 0.05 nm/min or less, and even more preferably 0.01 nm/min or less.
  • the treatment liquid preferably contains at least one metal compound having a lower ionization tendency than the valve metal, and has a pH of 4 or less or 8 or more, more preferably a pH of 3 or less or 9 or more, and even more preferably a pH of 2 or less or 10 or more.
  • Such a treatment liquid is preferably based on an acid or alkaline aqueous solution and contains, for example, compounds of manganese, zinc, chromium, iron, cadmium, cobalt, nickel, tin, lead, antimony, bismuth, copper, mercury, silver, palladium, platinum, and gold (e.g., chloroplatinic acid), their fluorides, or their chlorides.
  • an acid aqueous solution base is preferred, and a chloride blend is preferred.
  • a treatment solution in which mercury chloride is blended into an aqueous hydrochloric acid solution (hydrochloric acid/mercury chloride) and a treatment solution in which copper chloride is blended into an aqueous hydrochloric acid solution (hydrochloric acid/copper chloride) are preferred from the viewpoint of treatment latitude.
  • the composition of such a treatment liquid is not particularly limited, and for example, a bromine/methanol mixture, a bromine/ethanol mixture, aqua regia, etc. can be used.
  • the acid or alkali concentration of such a treatment solution is preferably from 0.01 to 10 mol/L, and more preferably from 0.05 to 5 mol/L.
  • the processing temperature when using such a processing solution is preferably from -10°C to 80°C, and more preferably from 0°C to 60°C.
  • the valve metal substrate is removed by contacting the valve metal substrate after the metal filling step with the treatment liquid described above.
  • the contact method is not particularly limited, and examples include the immersion method and the spray method. Of these, the immersion method is preferred.
  • the contact time is preferably 10 seconds to 5 hours, and more preferably 1 minute to 3 hours.
  • a solvent that does not dissolve the metal filled in the pores but selectively dissolves the anodic oxide film can be used, and either an alkaline aqueous solution or an acid aqueous solution can be used.
  • an alkaline aqueous solution When an alkaline aqueous solution is used, it is preferable to use an aqueous solution of at least one alkali selected from the group consisting of sodium hydroxide, potassium hydroxide, and lithium hydroxide, and it is more preferable to use an aqueous solution of potassium hydroxide.
  • the concentration of the alkaline aqueous solution is preferably 1 to 30 mass %.
  • the temperature of the alkaline aqueous solution is preferably 10 to 60°C, more preferably 20 to 60°C, and even more preferably 30 to 60°C.
  • an aqueous acid solution it is preferable to use an aqueous solution of an inorganic acid such as chromic acid, sulfuric acid, phosphoric acid, nitric acid, hydrochloric acid, oxalic acid, or a mixture thereof, and it is more preferable to use an aqueous solution of chromic acid.
  • the concentration of the aqueous acid solution is preferably 1 to 30 mass %.
  • the temperature of the aqueous acid solution is preferably 15 to 80°C, more preferably 20 to 60°C, and even more preferably 30 to 50°C.
  • the anodic oxide film is removed by contacting the above-mentioned alkaline aqueous solution and acid aqueous solution after the metal filling step (preferably after the valve metal substrate is removed).
  • the contacting method is not particularly limited, and examples include immersion and spraying. Of these, the immersion method is preferred.
  • the immersion time in the alkaline aqueous solution and acid aqueous solution is preferably 1 to 120 minutes, more preferably 2 to 90 minutes, even more preferably 3 to 60 minutes, and particularly preferably 3 to 30 minutes. Of these, 3 to 20 minutes is preferred, and 3 to 10 minutes is more preferred.
  • the crushing step is preferably carried out in water or in an aqueous solution having an alkali or acid concentration of less than 1 mass %, from the viewpoint of producing metal nanowires having higher bonding strength when bonded.
  • the crushing treatment include a crushing treatment using cavitation and a crushing treatment using ceramic balls, and devices such as an ultrasonic cleaner, an ultrasonic homogenizer, a jet mill, a wet type micronizer, etc.
  • a crushing treatment using cavitation or a crushing treatment using ceramic balls is preferred, and a crushing treatment using cavitation is more preferred.
  • the manufacturing method of the present invention further includes a step of reducing or removing the surface oxide layer of the isolated metal between the isolation step and the crushing step (or before the drying step, if the drying step is included).
  • the reduction or removal step may be, for example, a step of carrying out an immersion treatment using an aqueous alkaline solution or an aqueous acid solution as described above in the removal treatment of the anodic oxide film.
  • the modifying group is preferably at least one group selected from the group consisting of a carboxy group or a salt thereof, and an acetoacetyl group, and more preferably at least one group selected from the group consisting of a carboxy group or a salt thereof, and an acetoacetyl group.
  • a metal salt of the carboxy group is preferred, and a sodium salt of the carboxy group is more preferred.
  • the modified polyvinyl alcohol can be obtained, for example, by saponifying a polymer obtained by copolymerizing a monomer having a modifying group with a vinyl ester (e.g., vinyl acetate, etc.).
  • the modified polyvinyl alcohol may also be obtained by reacting a hydroxyl group or acetate group in unmodified polyvinyl alcohol with a compound having a modifying group.
  • polyvinyl alcohol examples include the Kuraray Poval series manufactured by Kuraray Co., Ltd. (e.g., Kuraray Poval PVA-217E, Kuraray Poval KL-318, etc.), the Gohsenx series manufactured by Mitsubishi Chemical Corporation (e.g., Gohsenx Z-320, etc.), and the A series manufactured by Nippon Vinyl Acetate & Poval Co., Ltd. (e.g., AP-17, etc.).
  • the polymerization degree of polyvinyl alcohol is preferably from 500 to 5,000, more preferably from 1,000 to 3,000, and even more preferably from 2,000 to 3,000.
  • the measurement conditions are a sample concentration of 0.45 mass%, a flow rate of 0.35 ml/min, a sample injection amount of 10 ⁇ l, and a measurement temperature of 40° C., and the measurement is performed using an RI (differential refractive index) detector.
  • the calibration curve is prepared from eight samples of "Standard Sample TSK standard, polystyrene" from Tosoh Corporation: "F-40", “F-20”, “F-4", “F-1”, "A-5000”, “A-2500”, "A-1000", and "n-propylbenzene".
  • the thermally conductive member of the present invention contains an epoxy resin and an epoxy resin curing agent
  • the total content of these is preferably 50 mass% or less, more preferably 30 mass% or less, and even more preferably 10 to 20 mass%, relative to the total mass of the thermally conductive member of the present invention.
  • the heat conductive member of the present invention may further contain an elastomer.
  • the elastomer include acrylic rubber (e.g., a copolymer of (meth)acrylate and acrylonitrile), SB (polystyrene-polybutadiene), SBS (polystyrene-polybutadiene-polystyrene), SIS (polystyrene-polyisoprene-polystyrene), SEBS (polystyrene-polyethylene/polybutylene-polystyrene), ABS (acrylonitrile butadiene styrene copolymer), ACM (acrylic acid ester rubber), ACS (acrylonitrile chlorinated polyethylene styrene copolymer), acrylonitrile styrene copolymer, syndiotactic 1,2-polybutadiene, polymethyl methacrylate-pol
  • the heat conductive member of the present invention may further contain a curing accelerator.
  • the curing accelerator include imidazoles and derivatives thereof, organic phosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts, etc. These may be used alone or in combination of two or more. Among these, imidazoles and derivatives thereof are preferred from the viewpoint of reactivity. Examples of imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, etc. These may be used alone or in combination of two or more.
  • the shape of the metal particles is not particularly limited, and they may be either solid or hollow.
  • the average major axis of the minimum enclosing ellipsoid of the metal particle is preferably 0.01 ⁇ m or more and 50 ⁇ m or less, and more preferably 0.1 ⁇ m or more and 20 ⁇ m or less.
  • the average major axis of the minimum enclosing ellipsoid of the metal particles is preferably 1 to 10 times the average minor axis, for the reason of selecting a shape that efficiently fills the space.
  • the shape of the heat conductive member of the present invention is not particularly limited, but a sheet-like shape is preferable because it can make the heat transfer uniform within the contact surface and also improves the adhesion with the heat dissipation member.
  • the sheet-like heat conductive member will be abbreviated as "heat conductive sheet”.
  • the size of the heat conductive sheet is not particularly limited, and can be processed to a size according to the size of the heat generating member.
  • the thickness is not particularly limited, but is preferably 20 to 200 ⁇ m, and more preferably 30 to 150 ⁇ m.
  • the method for producing the sheet may include a step of drying the coating liquid supplied onto the substrate. By drying the coating liquid, the sheet can be separated from the substrate as a free-standing sheet.
  • the drying method may be drying at room temperature, drying by heating, or drying under reduced pressure.
  • a hot plate, a hot air dryer, a hot air heating furnace, a nitrogen dryer, an infrared ray dryer, an infrared heating furnace, a far-infrared heating furnace, a microwave heating device, a laser heating device, an electromagnetic heating device, a heater heating device, a steam heating furnace, a hot plate press device, or the like may be used.
  • drying may be performed in a non-oxidizing atmosphere or a reducing atmosphere, for example, by substitution or blowing with a non-oxidizing gas such as argon, nitrogen, or water vapor, or with hydrogen or formic acid.
  • a non-oxidizing gas such as argon, nitrogen, or water vapor, or with hydrogen or formic acid.
  • the heat conductive sheet is preferably stored in a sealed container or bag containing an oxygen scavenger to prevent oxidation.
  • the sheet may also be stored with an easily peelable protective film attached to one or both sides.
  • the thermally conductive sheet can be mounted on, for example, electronic components such as semiconductor devices, or various heat dissipation components such as heat spreaders.
  • the thermally conductive sheet alone or the thermally conductive sheet with a protective film attached thereto is cut to a predetermined size.
  • the sheet may be cut either before or after the protective film is peeled off.
  • a thermally conductive sheet that has been cut to a specified size, or a thermally conductive sheet with the protective film removed, is used to bring each side of the thermally conductive sheet into contact with an electronic component such as a semiconductor device, which is a heat generating body, and a heat spreader, which is a heat dissipating body.
  • the method of contacting the heat generating body with one side of the heat conductive sheet and the method of contacting the heat dissipating body with the other side of the heat conductive sheet are not particularly limited as long as they can be fixed in a state of sufficient adhesion.
  • a method of placing a heat conductive sheet between the heat generating body and the heat dissipating body, fixing them with a pressurizable jig, and causing the heat generating body to generate heat in this state; a method of heating with an oven, etc.; and the like can be mentioned.
  • Another example is a method of using a press machine that can apply heat and pressure.
  • the device of the present invention can also be applied to wireless elements such as Global Positioning System (GPS), Frequency Modulation (FM), Near field communication (NFC), RF Expansion Module (RFEM), Monolithic Microwave Integrated Circuit (MMIC), Wireless Local Area Network (WLAN), discrete elements, Complementary Metal Oxide Semiconductor (CMOS), CMOS image sensors, camera modules, passive devices, Surface Acoustic Wave (SAW) filters, Radio Frequency (RF) filters, Integrated Passive Devices (IPDs), and the like.
  • wireless elements such as Global Positioning System (GPS), Frequency Modulation (FM), Near field communication (NFC), RF Expansion Module (RFEM), Monolithic Microwave Integrated Circuit (MMIC), Wireless Local Area Network (WLAN), discrete elements, Complementary Metal Oxide Semiconductor (CMOS), CMOS image sensors, camera modules, passive devices, Surface Acoustic Wave (SAW) filters, Radio Frequency (RF) filters, Integrated Passive Devices (IPDs), and the like.
  • the final products in which the device of the present invention is mounted are not particularly limited, and examples include smart TVs, mobile communication terminals, mobile phones, smartphones, tablet terminals, desktop PCs (Personal Computers), notebook PCs, network equipment (routers, switching), wired infrastructure equipment, digital cameras, game consoles, controllers, data centers, servers, mining PCs, HPCs (High Performance Computing), graphic cards, network servers, storage, chipsets, in-vehicle equipment (electronic control equipment, driving assistance systems), car navigation systems, PNDs (Portable Navigation Devices), lighting (general lighting, in-vehicle lighting, LED lighting, OLED (Organic Light Emitting Diode) lighting), televisions, displays, display panels (liquid crystal panels, organic EL (Electro Luminescence) panels, electronic paper), music playback terminals, industrial equipment, industrial robots, inspection equipment, medical equipment, white goods, space or aircraft equipment, wearable devices, etc.
  • the device of the present invention can also be used in applications such as building materials (e.g., flooring, roofing, wall materials, etc.) suitable for temperature control during sudden daytime temperature increases or indoor heating and cooling; clothing (e.g., underwear, jackets, winter clothing, gloves, etc.) suitable for temperature control in response to changes in environmental temperature or changes in body temperature during exercise or at rest; bedding; and exhaust heat utilization systems that store unnecessary exhaust heat and use it as thermal energy.
  • building materials e.g., flooring, roofing, wall materials, etc.
  • clothing e.g., underwear, jackets, winter clothing, gloves, etc.
  • exhaust heat utilization systems that store unnecessary exhaust heat and use it as thermal energy.
  • a molten metal was prepared using an aluminum alloy containing 0.06 mass% Si, 0.30 mass% Fe, 0.005 mass% Cu, 0.001 mass% Mn, 0.001 mass% Mg, 0.001 mass% Zn, 0.001 mass% Ti, and the remainder being Al and unavoidable impurities.
  • the molten metal was treated and filtered, and an ingot having a thickness of 500 mm and a width of 1,200 mm was produced by a DC (Direct Chill) casting method. Next, the surface was scraped off by an average thickness of 10 mm using a facing machine, and then the plate was soaked at 550°C for about 5 hours.
  • the plate When the temperature was lowered to 400°C, the plate was rolled into a 2.7 mm thick plate using a hot rolling machine. Further, the sheet was heat-treated at 500° C. using a continuous annealing machine, and then cold-rolled to a thickness of 1.0 mm to obtain an aluminum substrate of JIS (Japanese Industrial Standards) 1050 material. The aluminum substrate was formed into a wafer having a diameter of 200 mm (8 inches) and then subjected to the following treatments.
  • JIS Japanese Industrial Standards
  • Electrolytic polishing treatment The above-mentioned aluminum substrate was subjected to electrolytic polishing treatment using an electrolytic polishing solution having the following composition under conditions of a voltage of 25 V, a solution temperature of 65° C., and a solution flow rate of 3.0 m/min.
  • the cathode was a carbon electrode
  • the power source was GP0110-30R (manufactured by Takasago Manufacturing Co., Ltd.)
  • the flow rate of the electrolyte was measured using a vortex flow monitor FLM22-10PCW (manufactured by AS ONE Corporation).
  • (Electrolytic polishing solution composition) 85% by weight phosphoric acid (reagent manufactured by Wako Pure Chemical Industries, Ltd.) 660 mL ⁇ 160mL of pure water ⁇ 150mL sulfuric acid ⁇ 30mL ethylene glycol
  • the aluminum substrate after the electrolytic polishing treatment was subjected to anodizing treatment by a self-ordering method according to the procedure described in JP-A-2007-204802.
  • the aluminum substrate after electrolytic polishing was subjected to a pre-anodizing treatment for 5 hours in an electrolytic solution of 0.50 mol/L oxalic acid under conditions of a voltage of 40 V, a solution temperature of 16° C., and a solution flow rate of 3.0 m/min.
  • the aluminum substrate after the pre-anodizing treatment was subjected to a coating removal treatment by immersing it in a mixed aqueous solution of 0.2 mol/L chromic anhydride and 0.6 mol/L phosphoric acid (liquid temperature: 50° C.) for 12 hours. Thereafter, re-anodization was performed for 5 hours in an electrolyte of 0.50 mol/L oxalic acid under conditions of a voltage of 40 V, a liquid temperature of 16° C., and a liquid flow rate of 3.0 m/min, to obtain an anodized film with a thickness of 40 ⁇ m.
  • the cathode was a stainless steel electrode, and the power source was GP0110-30R (manufactured by Takasago Manufacturing Co., Ltd.).
  • the cooling device was NeoCool BD36 (manufactured by Yamato Scientific Co., Ltd.), and the stirring and heating device was Pair Stirrer PS-100 (manufactured by EYELA Tokyo Rikakikai Co., Ltd.).
  • the flow rate of the electrolyte was measured using a vortex flow monitor FLM22-10PCW (manufactured by AS ONE Corporation).
  • Component (A) Resin Bisphenol F type epoxy resin (product name: EXA-830CRP, manufactured by DIC Corporation)
  • the CTE (coefficient of linear expansion) in the in-plane direction of the sheets produced in Examples 1 to 5 and Comparative Examples 1 and 2 was measured using a thermal mechanical analyzer (TMA, manufactured by Shimadzu Corporation). Specifically, a sample cut to a width of 4 mm and a length of 14 mm was set on a measuring jig so that the chuck distance was 10 mm, and the temperature was raised and lowered while a tensile load of 1 gf was applied, and the amount of expansion of the sample was measured. The temperature control for heating and cooling was performed by heating from 25° C. to 200° C. at a rate of 5° C./min, then cooling to 25° C.
  • TMA thermal mechanical analyzer
  • Example 1 and 2 In particular, by comparing Examples 1 and 2 with Examples 3 and 4, it was found that when the content of metal nanowires satisfies both requirements 1 and 2, the adhesion between the thermal conduction member and the heat dissipation member is better. Furthermore, a comparison between Example 1 and Example 2 revealed that when the content of metal nanowires was more than 50% by volume, the adhesion between the heat conducting member and the heat dissipating member was further improved. Furthermore, a comparison between Example 1 and Example 5 reveals that the adhesion between the heat conducting member and the heat dissipating member is improved when a resin other than a fluororesin is used.
  • Valve metal substrate Porous (micropore) 3 Anodic oxide film 4 Metal 5 Isolated metal 10 Metal nanowire

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)

Abstract

La présente invention aborde le problème de la fourniture d'un élément de transfert de chaleur et d'un dispositif l'utilisant, l'élément de transfert de chaleur présentant une excellente adhérence à un élément de dissipation de chaleur même lorsqu'il est exposé à un processus dans lequel le chauffage et le refroidissement sont répétés. L'élément de transfert de chaleur selon la présente invention satisfait au moins à l'une des exigences 1 et 2.　Exigence 1 : Il contient de 40 à 99% en volume de nanofil métallique.　Exigence 2 : Il contient de 70 à 99% en masse de nanofil métallique.
PCT/JP2023/044322 2022-12-26 2023-12-12 Élément et dispositif de transfert de chaleur WO2024142895A1 (fr)

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JP2022207983 2022-12-26

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008545881A (ja) * 2005-05-18 2008-12-18 サントル ナスィオナル ド ラ ルシェルシュ スィアンティフィク 自立伝導性ナノ複合エレメントの電解製造法
JP2010189695A (ja) * 2009-02-17 2010-09-02 Fujifilm Corp 金属部材
WO2013175744A1 (fr) * 2012-05-21 2013-11-28 東洋インキＳｃホールディングス株式会社 Agrégats facilement déformables et processus de fabrication de ceux-ci, composition de résine thermoconductrice, élément thermoconducteur et processus de fabrication de celui-ci, et feuille d'adhésion thermoconductrice
JP2021515385A (ja) * 2018-03-02 2021-06-17 ノースロップ グラマン システムズ コーポレーション 高い横方向熱伝導率を有する熱ガスケット

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008545881A (ja) * 2005-05-18 2008-12-18 サントル ナスィオナル ド ラ ルシェルシュ スィアンティフィク 自立伝導性ナノ複合エレメントの電解製造法
JP2010189695A (ja) * 2009-02-17 2010-09-02 Fujifilm Corp 金属部材
WO2013175744A1 (fr) * 2012-05-21 2013-11-28 東洋インキＳｃホールディングス株式会社 Agrégats facilement déformables et processus de fabrication de ceux-ci, composition de résine thermoconductrice, élément thermoconducteur et processus de fabrication de celui-ci, et feuille d'adhésion thermoconductrice
JP2021515385A (ja) * 2018-03-02 2021-06-17 ノースロップ グラマン システムズ コーポレーション 高い横方向熱伝導率を有する熱ガスケット

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