WO2024127797A1 - 有機発光素子 - Google Patents

有機発光素子 Download PDF

Info

Publication number
WO2024127797A1
WO2024127797A1 PCT/JP2023/037476 JP2023037476W WO2024127797A1 WO 2024127797 A1 WO2024127797 A1 WO 2024127797A1 JP 2023037476 W JP2023037476 W JP 2023037476W WO 2024127797 A1 WO2024127797 A1 WO 2024127797A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
layer
emitting
organic
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2023/037476
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
博晃 佐野
陽次郎 松田
希之 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to CN202380085019.8A priority Critical patent/CN120345391A/zh
Priority to KR1020257016306A priority patent/KR20250092228A/ko
Priority to DE112023004722.7T priority patent/DE112023004722T5/de
Publication of WO2024127797A1 publication Critical patent/WO2024127797A1/ja
Priority to US19/236,350 priority patent/US20260059982A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/121Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19Tandem OLEDs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/123Connection of the pixel electrodes to the thin film transistors [TFT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65OLEDs integrated with inorganic image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/805Electrodes
    • H10K59/8051Anodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/805Electrodes
    • H10K59/8052Cathodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/875Arrangements for extracting light from the devices
    • H10K59/876Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/875Arrangements for extracting light from the devices
    • H10K59/878Arrangements for extracting light from the devices comprising reflective means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/90Assemblies of multiple devices comprising at least one organic light-emitting element
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/85Arrangements for extracting light from the devices
    • H10K50/858Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/38Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]

Definitions

  • the technology disclosed herein relates to organic light-emitting devices.
  • An organic light-emitting element (also called an organic electroluminescence element (organic EL element)) is an electronic element that has a pair of electrodes and an organic compound layer disposed between these electrodes. By injecting electrons and holes from the pair of electrodes, excitons of the light-emitting organic compound in the organic compound layer are generated, and when the excitons return to the ground state, the organic light-emitting element emits light. Recent progress in organic light-emitting elements has been remarkable, with progress being made in lower driving voltages, a variety of emission wavelengths, high-speed responsiveness, and thinner, lighter light-emitting devices.
  • tandem-type organic light-emitting devices are known in which a charge generation layer is provided between multiple light-emitting layers.
  • a charge generation layer is provided between multiple light-emitting layers.
  • Patent Document 1 describes an organic light-emitting element in which a light-emitting layer is formed by a coating method.
  • Patent Document 1 also describes an organic light-emitting element having a first light-emitting unit and a second light-emitting unit between a first electrode and a second electrode, and having a charge generation layer between the light-emitting units.
  • Patent Document 1 also describes that by making the thickness of the layer between the light-emitting layer of the first light-emitting unit and the light-emitting layer of the second light-emitting unit greater than the thickness between the first light-emitting layer and the first electrode, it is possible to increase the light-emitting efficiency by using the microcavity effect.
  • Patent Document 1 a charge generation layer is provided between multiple light-emitting layers.
  • the charge generation layer is configured to be shared by multiple pixels, leakage current may occur when charges supplied from the charge generation layer are supplied to adjacent pixels.
  • Patent Document 2 proposes a technique for forming grooves between subpixels. Since the thickness of the organic compound layer inside the groove is thinner than the thickness of the organic compound layer outside the groove, the resistance inside the groove increases. As a result, leakage current between adjacent subpixels is suppressed, and color mixing of the emission colors of adjacent subpixels is suppressed.
  • the organic film is configured to be thick, for example by increasing the thickness between the light-emitting layer of the first light-emitting unit and the light-emitting layer of the second light-emitting unit.
  • the inside of the groove is filled with the organic film before the charge generation layer is formed, so that the charge generation layer is not formed inside the groove, and there is a possibility that the charge supplied from the charge generation layer will be supplied to the pixel.
  • the technology disclosed herein has been developed in consideration of the above problems, and provides a technology for suppressing leakage current between pixels while increasing the light-emitting efficiency through the microcavity effect in organic light-emitting elements.
  • the organic light-emitting device includes an organic light-emitting device having a first element on a substrate, the first element having, in this order, a first lower electrode, a first light-emitting layer emitting light of a first color, a charge generation layer, a second light-emitting layer emitting light of the first color, and an upper electrode; a second element on the substrate, the second element having, in this order, a second lower electrode, a third light-emitting layer emitting light of a second color different from the first color, the charge generation layer, a fourth light-emitting layer emitting light of the second color, and the upper electrode; and an insulating layer covering an end of the first lower electrode and an end of the second lower electrode, the first element having one or more organic layers between the first lower electrode and the charge generation layer, the insulating layer having a groove between the first lower electrode and the second lower electrode, and an end of at least one of the one or more organic layers being disposed between
  • the organic light-emitting device includes an organic light-emitting device having a first element on a substrate, the first element having, in this order, a first lower electrode, a first light-emitting layer that emits light of a first color, a charge generation layer, a second light-emitting layer that emits light of the first color, and an upper electrode, and a second element on the substrate, the second element having, in this order, a second lower electrode, a third light-emitting layer that emits light of a second color different from the first color, the charge generation layer, a fourth light-emitting layer that emits light of the second color, and the upper electrode, the first element having a reflective layer and a first optical adjustment layer.
  • the display device includes a display device having a plurality of pixels, characterized in that at least one of the plurality of pixels has the above-mentioned organic light-emitting element and a transistor connected to the organic light-emitting element.
  • the photoelectric conversion device includes a photoelectric conversion device having an optical unit having a plurality of lenses, an imaging element that receives light that has passed through the optical unit, and a display unit that displays an image captured by the imaging element, wherein the display unit has the above-mentioned organic light-emitting element.
  • an electronic device includes an electronic device characterized by having a display unit having the above-mentioned organic light-emitting element, a housing in which the display unit is provided, and a communication unit provided in the housing and communicating with the outside.
  • the lighting device includes a lighting device characterized by having a light source having the above organic light-emitting element, and a light diffusion section or an optical film that transmits light emitted by the light source.
  • a moving body according to the present disclosure includes a moving body characterized by having a lighting device having the above organic light-emitting element, and a body on which the lighting device is provided.
  • the technology disclosed herein makes it possible to suppress leakage current between organic light-emitting elements while increasing the light-emitting efficiency through the microcavity effect.
  • FIG. 1 is a cross-sectional view showing an example of a light-emitting device according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view showing an example of a light-emitting device according to an embodiment of the present invention.
  • FIG. 3 is a cross-sectional view showing an example of a light-emitting device according to an embodiment of the present invention.
  • FIG. 4 is a cross-sectional view showing an example of a light-emitting device according to an embodiment of the present invention.
  • FIG. 5 is a cross-sectional view showing an example of a light-emitting device according to an embodiment of the present invention.
  • FIG. 6 is a cross-sectional view showing an example of a light-emitting device according to an embodiment of the present invention.
  • FIG. 7 is a cross-sectional view showing an example of a light-emitting device according to an embodiment of the present invention.
  • FIG. 8 is a cross-sectional view showing an example of a light-emitting device according to an embodiment of the present invention.
  • FIG. 9 is a cross-sectional view showing an example of a light-emitting device according to an embodiment of the present invention.
  • FIG. 10 is a cross-sectional view of a light-emitting device according to a comparative example.
  • FIG. 11 is a plan view of a light emitting element according to a comparative example.
  • 12A and 12B are cross-sectional views illustrating an example of a display device according to an embodiment.
  • FIG. 13 is a diagram illustrating an example of a display device according to an embodiment.
  • 14A and 14B are diagrams illustrating an example of an imaging device and an electronic device according to an embodiment.
  • 15A and 15B are diagrams illustrating an example of a display device according to an embodiment.
  • 16A and 16B are diagrams illustrating an example of a vehicle having a lighting device and a lamp according to an embodiment.
  • 17A and 17B are diagrams illustrating an example of a wearable device according to one embodiment.
  • FIG. 1 is a cross-sectional view showing an example of a first sub-pixel 100a, a second sub-pixel 100b, and a third sub-pixel 100c of a light emitting element 1 according to this embodiment.
  • the light-emitting element 1 in FIG. 1 is configured in the following order on the substrate 101: lower electrodes 102a-102c, first organic layer 103, second organic layer 104, first light-emitting layers 105a-105c, and third organic layer 106. Furthermore, the light-emitting element 1 is configured in the following order on the third organic layer 106: charge generation layer 107, fourth organic layer 108, second light-emitting layers 109a-109c, fifth organic layer 110, upper electrode 111, and protective layer 112. Furthermore, as shown in the figure, an insulating layer 113 is provided to cover both ends of the lower electrode 102a; the insulating layer 113 is also called a pixel separation film or bank. Similarly, an insulating layer is provided to cover both ends of the lower electrodes 102b and 102c.
  • the insulating layer 113 has a groove 114 formed therein as an isolation structure.
  • the first subpixel 100a is an example of a first element
  • the lower electrode 102a corresponds to a first lower electrode
  • the first light-emitting layer 105a corresponds to a first light-emitting layer that emits light of a first color
  • the second light-emitting layer 109a corresponds to a second light-emitting layer that emits light of a first color.
  • the second subpixel 100b is an example of a second element
  • the lower electrode 102b corresponds to a second lower electrode
  • the first light-emitting layer 105b corresponds to a third light-emitting layer that emits light of a second color
  • the second light-emitting layer 109b corresponds to a fourth light-emitting layer that emits light of a second color.
  • the first light-emitting layers 105a to 105c and the second light-emitting layer 109 are formed by a so-called separate coating method. That is, for example, an organic layer is formed for each color using a metal mask, photolithography, or the like. As a result, the first light-emitting layers 105a to 105c each emit a different color. The second light-emitting layers 109a to 109c also each emit a different color. In this embodiment, at least one of the first organic layer 103, the second organic layer 104, the third organic layer 106, the fourth organic layer 108, and the fifth organic layer 110 is formed by a separate coating method.
  • the light-emitting element 1 of this embodiment is a so-called tandem-type light-emitting element in which a charge generation layer is provided between multiple light-emitting layers, and has a charge generation layer 107.
  • the charge generation layer 107 is a layer that generates holes and electrons when a voltage is applied between a lower electrode and an upper electrode.
  • the charge generation layer 107 contains a compound that easily accepts electrons from other organic compounds.
  • the charge generation layer 107 is formed by combining an alkali metal with a compound having a lowest unoccupied molecular orbital level energy of -5.0 eV or less, and can function as a charge generation layer.
  • the alkali metal that constitutes the charge generation layer 107 may be Li, and Li may be used as a single metal, as part of a compound, or as part of an organometallic complex.
  • the compound used in the charge generation layer 107 may be, but is not limited to, a hexaazatriphenylene compound, a radialene compound, hexafluoroquinodimethane, etc.
  • the lowest unoccupied molecular orbital level energy is low enough to extract an electron from the highest occupied molecular orbital (HOMO) of the alkali metal, thereby enabling charge generation.
  • the light-emitting element 1 of this embodiment is configured so that the first light-emitting layers 105a-105c and the second light-emitting layers 109a-109c emit the same color by adopting a color-coded method.
  • the first light-emitting layer 105a and the second light-emitting layer 109a may be configured to emit red light
  • the first light-emitting layer 105b and the second light-emitting layer 109b may be configured to emit green light
  • the first light-emitting layer 105c and the second light-emitting layer 109c may be configured to emit blue light.
  • the light-emitting element 1 of this embodiment also has a so-called microcavity structure. That is, when the optical path length from the upper surfaces of the lower electrodes 102a to 102c to the light-emitting positions of the first light-emitting layers 105a to 105c corresponding to the lower electrodes 102a to 102c is Lr and the phase shift in the lower electrodes 102 is ⁇ r, the following formula (1) is established.
  • Lr (2m - ( ⁇ r / ⁇ )) ⁇ ( ⁇ / 4) ...
  • m is an integer equal to or greater than 0.
  • the optical path lengths of the first organic layer 103 and the second organic layer 104 can be optimized for each color so as to satisfy the above formula (1).
  • is the sum of phase shifts ⁇ r+ ⁇ s when light of wavelength ⁇ is reflected by the lower electrode 102 and the upper electrode 111.
  • the above describes the case of the first light-emitting layers 105a to 105c, but the above relationship also applies to the second light-emitting layers 109a to 109c. Therefore, by configuring both the first light-emitting layers 105a to 105c and the second light-emitting layers 109a to 109c as a microcavity structure, the light-emitting element 1 can achieve more efficient light emission than light-emitting elements based on conventional technology.
  • [Suppression of leakage current between sub-pixels] 2 is a cross-sectional view enlarging the vicinity of the groove 114 in FIG. 1.
  • a groove 114 is formed in the insulating layer 113, and the first organic layer 103, the third organic layer 106, the charge generating layer 107, the fifth organic layer 110, and the upper electrode 111 are arranged therein.
  • the subpixel 100a has one or more organic layers between the lower electrode 102a and the charge generating layer 107, and has an insulating layer 113 that covers the end of the lower electrode 102a and the end of the lower electrode 102b.
  • the insulating layer 113 also has a groove 114 between the lower electrode 102a and the lower electrode 102b. And, the end 104a of at least one organic layer (here, the second organic layer 104) between the lower electrode 102a and the charge generating layer 107 is arranged between the groove 114 and the subpixel 100a.
  • the groove 114 is not filled with an organic film, and the charge generation layer 107 is deposited inside the groove. Also, as shown in the figure, the thickness of the charge generation layer 107 on the inner sidewall of the groove 114 ("a" in the figure) is thinner than the thickness of the charge generation layer 107 on the outer flat portion of the groove 114 ("b" in the figure). This increases the resistance inside the groove 114, thereby suppressing leakage current between adjacent subpixels.
  • FIG. 10 shows a cross-sectional view of a light-emitting element 5 of the prior art as a comparative example of the light-emitting element 2 of this embodiment.
  • a lower electrode 502a As shown in FIG. 10, in the light-emitting element 5, a lower electrode 502a, a first organic layer 503, a second organic layer 504, a first light-emitting layer 505a, a third organic layer 506, a charge generating layer 507, and a fourth organic layer 508 are formed on a substrate 501 in this order from the substrate 501 side.
  • a second light-emitting layer 509a, a fifth organic layer 510, an upper electrode 511, and a protective layer 512 are formed on the fourth organic layer 508 in this order from the substrate 501 side.
  • an insulating layer 513 is provided to cover the end of the lower electrode 502a, and a groove 514 is formed in the insulating layer 513.
  • FIG. 11 is an enlarged view of the vicinity of the groove 514 shown in FIG. 10.
  • the second organic layer 504 and the first light-emitting layer 505a are formed up to the inside of the groove 514. Therefore, when the charge generation layer 507 is formed, the groove 514 is already filled with the organic film.
  • the organic film becomes thicker in order to satisfy the interference conditions, and the groove 514 is likely to be filled with the organic film. As a result, the charge generation layer 507 is not formed in the groove, and a leakage current flows between adjacent subpixels, resulting in mixed-color emission.
  • the first subpixel 100a in the first subpixel 100a, at least one of the first organic layer 103, the second organic layer 104, the first light-emitting layer 105a, and the third organic layer 106 between the lower electrode 102a and the charge generation layer 107 is not formed inside the groove 114.
  • the groove 114 is not filled with an organic film, and the charge generation layer 107 is formed inside the groove 114.
  • the thickness of the charge generation layer 107 at the side wall part inside the groove 114 ("a" in FIG. 2) is thinner than the thickness of the charge generation layer 107 at the outer flat part of the groove 114 ("b" in FIG. 2), and leakage current between adjacent subpixels is suppressed.
  • the charge generation layer is also formed inside the groove for the second subpixel 100b and the third subpixel 100c as in the first subpixel 100a.
  • At least one of the first organic layer 103, the second organic layer 104, the first light-emitting layer 105a, and the third organic layer 106 may be formed in at least a part of the groove 114.
  • the second organic layer 104 and the first light-emitting layer 105a are formed in a part of the groove 114, and the groove 114 is not filled with an organic film when the charge generation layer 107 is formed.
  • the thickest layer of the organic layers or light-emitting layers from the lower electrode 102 to the charge generation layer 107 may not be formed in at least a part of the groove 114. By not forming the thickest layer in the groove 114, the groove 114 is less likely to be filled with an organic film when the charge generation layer 107 is formed.
  • the width of the groove 114 it is possible to make the groove 114 less likely to be filled with an organic film when the charge generating layer 107 is formed.
  • the width of the groove 114 is widened so that the groove 114 does not interfere with the light-emitting region, the light-emitting region will become smaller. If the light-emitting region becomes smaller, the current density required to produce the required brightness increases, and the light-emitting life of the organic light-emitting element will become shorter.
  • the width of the groove 114 must also be narrowed to prevent the light-emitting region from becoming smaller. From this perspective, the light-emitting element 2 of this embodiment is also useful for miniaturizing pixel size.
  • the inside of the groove is not filled with an organic film before the charge generation layer is formed, so the charge generation layer is formed inside the groove.
  • the thickness of the charge generation layer inside the groove is thinner than the thickness of the charge generation layer outside the groove, and the resistance inside the groove is high. As a result, leakage current between adjacent subpixels is suppressed, and color mixing between adjacent pixels with different emission colors can be suppressed.
  • FIG. 4 shows a cross-sectional view illustrating an example of the first subpixel 200a, the second subpixel 200b, and the third subpixel 200c of the light-emitting element 2 according to this embodiment.
  • the light-emitting element 2 has a substrate 201, lower electrodes 202a-202c, a first organic layer 203, and first light-emitting layers 205a-205c, similar to the light-emitting element 1.
  • the light-emitting element 2 has a third organic layer 206, a charge generating layer 207, a fourth organic layer 208, second light-emitting layers 209a-209c, a fifth organic layer 210, an upper electrode 211, a protective layer 212, and an insulating layer 213, similar to the light-emitting element 1.
  • reflective layers 215a-215c and optical adjustment layers 216a-216c are further formed in comparison with the light-emitting element 1 of the first embodiment.
  • the reflective layer 215a is an example of a first reflective layer
  • the reflective layer 215b is an example of a second reflective layer.
  • the optical adjustment layer 216a is an example of a first optical adjustment layer
  • the optical adjustment layer 216b is an example of a second optical adjustment layer.
  • the optical adjustment layers 216a-216c can be composed of insulating layers.
  • the lower electrodes 202a-202c can be composed of transparent electrodes. Furthermore, in the light-emitting element 2, the groove 114 in the light-emitting element 1 of the first embodiment is not formed.
  • a microcavity structure may be adopted so that the thicknesses of the optical adjustment layers 216a to 216c are different for each subpixel.
  • the thickness of the optical adjustment layer 216a may be set to satisfy the red interference condition
  • the thickness of the optical adjustment layer 216b may be set to satisfy the green interference condition
  • the thickness of the optical adjustment layer 216c may be set to satisfy the blue interference condition.
  • the optical path length from the upper surface of the reflective layer 215a to the light-emitting position of the first light-emitting layer 205a is defined as L1a.
  • the optical path length L1a is the sum of the optical distance between the upper surface of the lower electrode 202a and the first light-emitting layer 205a, the optical distance of the thickness of the lower electrode 202a, and the optical distance of the thickness of the optical adjustment layer 216a.
  • the optical path length from the upper surface of the reflective layer 215b to the light-emitting position of the first light-emitting layer 205b is defined as L1b.
  • the optical path length L1b is the sum of the optical distance between the upper surface of the lower electrode 202b and the first light-emitting layer 205b, the optical distance of the thickness of the lower electrode 202b, and the optical distance of the thickness of the optical adjustment layer 216b.
  • the optical path length from the upper surface of the reflective layer 215c to the light-emitting position of the first light-emitting layer 205c is defined as L1c.
  • the optical path length L1c is the sum of the optical distance from the upper surface of the lower electrode 202c to the first light-emitting layer 205c, the optical distance of the thickness of the lower electrode 202c, and the optical distance of the thickness of the optical adjustment layer 216c.
  • the optical path length from the upper surface of the reflective layer 215a to the light-emitting position of the second light-emitting layer 209a is defined as L2a.
  • the optical path length L2a is the sum of the optical distance between the upper surface of the lower electrode 202a and the second light-emitting layer 209a, the optical distance of the thickness of the lower electrode 202a, and the thickness of the optical adjustment layer 216a.
  • the optical path length from the upper surface of the reflective layer 215b to the light-emitting position of the second light-emitting layer 209b is defined as L2b.
  • the optical path length L2b is the sum of the optical distance between the upper surface of the lower electrode 202b and the second light-emitting layer 209b, the optical distance of the thickness of the lower electrode 202b, and the thickness of the optical adjustment layer 216b.
  • the optical path length from the upper surface of the reflective layer 215c to the light-emitting position of the second light-emitting layer 209c is defined as L2c.
  • the optical path length L2c is the sum of the optical distance from the upper surface of the lower electrode 202c to the second light-emitting layer 209c, the optical distance of the thickness of the lower electrode 202c, and the thickness of the optical adjustment layer 216c.
  • an optical resonator structure is provided between the reflective layer 215a and the first light-emitting layer 205a, which resonates the light emitted by the first light-emitting layer 205a by reflecting it by the reflective layer 215a.
  • an optical resonator structure is provided between the reflective layer 215b and the first light-emitting layer 205b, which resonates the light emitted by the first light-emitting layer 205b by reflecting it by the reflective layer 215b.
  • an optical resonator structure is provided between the reflective layer 215c and the first light-emitting layer 205c, which resonates the light emitted by the first light-emitting layer 205c.
  • the total film thickness of the organic layers is reduced by the optical distance of the thicknesses of the lower electrodes 202a to 202c and the optical adjustment layers 216a to 216c corresponding to the lower electrodes 202a to 202c. The thinner the total film thickness of the organic layers, the smaller the voltage applied to the organic light-emitting element.
  • the total thickness of the organic layers is reduced by the optical distance between the thicknesses of the lower electrodes 202a-202c and the optical adjustment layers 216a-216c corresponding to the lower electrodes 202a-202c, and the driving voltage is suppressed, thereby reducing power consumption.
  • FIG. 5 shows a light-emitting element 200, which is a modified example of the light-emitting element 2 of this embodiment.
  • the light-emitting element 200 further includes a groove 214 formed therein in comparison with the light-emitting element 2 of FIG. 4.
  • FIG. 6 shows an enlarged cross-sectional view of the vicinity of the groove 214 formed in the first subpixel 200a of FIG. 5.
  • the thickness of the organic layer between the lower electrode 202a and the first light-emitting layer 205a can be reduced by the optical distance of the thickness of the lower electrode 202a and the optical adjustment layer 216a.
  • the thickness of the organic layer between the lower electrode 202b and the first light-emitting layer 205b can be reduced.
  • the thickness of the organic layer between the lower electrode 202c and the first light-emitting layer 205c can be reduced.
  • an organic layer corresponding to the second organic layer 104 in the light-emitting element 1 is not formed, so the groove 214 is not filled with an organic film when the charge generation layer 207 is formed.
  • the charge generating layer is formed inside the groove, thereby suppressing leakage current between adjacent subpixels.
  • FIG. 7 is a cross-sectional view showing an example of the first subpixel 300a, the second subpixel 300b, and the third subpixel 300c of the light-emitting element 3 according to this embodiment.
  • FIG. 8 is a cross-sectional view showing an enlarged view of the vicinity of the groove 314 in FIG. 7.
  • the light-emitting element 3 has a substrate 301, lower electrodes 302a to 302c, a first organic layer 303, and a first light-emitting layer 305a to 305c, similar to the light-emitting element 200.
  • the light-emitting element 3 has a third organic layer 306, a charge generation layer 307, a fourth organic layer 308, a second light-emitting layer 309a to 309c, a fifth organic layer 310, an upper electrode 311, a protective layer 312, and an insulating layer 313.
  • the light-emitting element 3 has reflective layers 315a to 315c and optical adjustment layers 316a to 316c.
  • the first light-emitting layer 305a is not formed inside the groove 314. This makes it more difficult for the groove 314 of the light-emitting element 3 to be filled with an organic film than the groove 214 of the light-emitting element 200. As a result, the charge generation layer 307 is formed inside the groove 314.
  • the thickness of the organic layer between the lower electrode 302a and the first light-emitting layer 305a can be made thinner by the optical distance between the lower electrode 302a and the optical adjustment layer 316a. Furthermore, in the light-emitting element 3, by preventing the first light-emitting layer 305a from being deposited inside the groove 314, the charge generation layer 307 can be deposited inside the groove 314 without filling the groove 314 with an organic film. Also, in the second subpixel 300b and the third subpixel 300c, the charge generation layer 307 can be deposited inside the groove, similar to the first subpixel 300a.
  • the charge generating layer is formed inside the groove, thereby suppressing leakage current between adjacent subpixels.
  • FIG. 9 is a cross-sectional view showing an example of the first subpixel 400a, the second subpixel 400b, and the third subpixel 400c of the light-emitting element 4 according to this embodiment.
  • the light-emitting element 4 has a substrate 401, lower electrodes 402a to 402c, a first organic layer 403, and a first light-emitting layer 405a to 405c, similar to the light-emitting element 3.
  • the light-emitting element 4 has a third organic layer 406, a charge generation layer 407, a fourth organic layer 408, a second light-emitting layer 409a to 409c, a fifth organic layer 410, an upper electrode 411, a protective layer 412, and an insulating layer 413.
  • the light-emitting element 4 has reflective layers 415a to 415c and optical adjustment layers 416a to 416c.
  • a planarization layer 417 is formed in comparison with the light-emitting element 3 of the third embodiment, and color filters 418a to 418c corresponding to the sub-pixels 400a to 400c are disposed on the planarization layer 417.
  • the color filters 418a, 418b, and 418c are color filters that transmit different colors. Note that the color filters 418a, 418b, and 418c do not necessarily have to be provided in the light-emitting element 4.
  • microlenses 419a to 419c corresponding to the sub-pixels 400a to 400c are formed on the color filters 418a, 418b, and 418c, respectively. Therefore, according to the light-emitting element 4 of this embodiment, the microlenses 419a to 419c can efficiently extract the light of each color output from the sub-pixels 400a to 400c while suppressing leakage current between adjacent sub-pixels.
  • the organic light-emitting element of this embodiment is provided by forming an insulating layer, a lower electrode, a functional layer including a light-emitting layer, and an upper electrode on a substrate.
  • a protective layer, a color filter, a microlens, etc. may be provided on the upper electrode.
  • a planarizing layer may be provided between the protective layer.
  • the planarizing layer may be made of acrylic resin, etc. The same applies when a planarizing layer is provided between the color filter and the microlens.
  • the material of the substrate constituting the organic light-emitting element may be at least one of quartz, glass, silicon, resin, and metal.
  • the substrate may be provided with switching elements such as transistors and wiring, and an insulating layer may be provided thereon.
  • the insulating layer any material may be used as long as it can form a contact hole so that wiring can be formed between the first electrode and the insulating layer, and can ensure insulation from wiring that is not connected.
  • resin such as polyimide, silicon oxide, silicon nitride, etc. may be used.
  • a pair of electrodes can be used for the organic light-emitting element.
  • the pair of electrodes may be an anode and a cathode.
  • the electrode with a higher potential is the anode, and the other is the cathode. It can also be said that the electrode that supplies holes to the light-emitting layer is the anode, and the electrode that supplies electrons is the cathode.
  • the material that constitutes the anode should have as large a work function as possible.
  • metals such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, and tungsten, or mixtures containing these metals, can be used for the anode.
  • alloys combining these metals, or metal oxides such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide can be used for the anode.
  • Conductive polymers such as polyaniline, polypyrrole, and polythiophene can also be used for the anode.
  • the anode may be composed of a single layer or multiple layers.
  • the electrode material can be, for example, chromium, aluminum, silver, titanium, tungsten, molybdenum, or an alloy or laminate of these. The above materials can also function as a reflective film without acting as an electrode.
  • a transparent conductive layer of oxide such as indium tin oxide (ITO) or indium zinc oxide can be used, but is not limited to these. Photolithography technology can be used to form the electrode.
  • the material for the cathode should have a small work function.
  • examples of such materials include alkali metals such as lithium, alkaline earth metals such as calcium, aluminum, titanium, manganese, silver, lead, and chromium, or mixtures containing these metals.
  • alloys combining these metal elements can be used.
  • magnesium-silver, aluminum-lithium, aluminum-magnesium, silver-copper, and zinc-silver can be used.
  • Metal oxides such as indium tin oxide (ITO) can also be used. These electrode materials can be used alone or in combination of two or more types.
  • the cathode can be a single layer or a multilayer structure.
  • silver is preferably used, and a silver alloy is even more preferable to reduce the aggregation of silver.
  • the ratio of the alloy is not important.
  • the ratio of silver to other metal can be 1:1, 3:1, etc.
  • the cathode may be a top-emission element using an oxide conductive layer such as ITO, or a bottom-emission element using a reflective electrode such as aluminum (Al), and is not particularly limited.
  • the method for forming the cathode is not particularly limited, but DC and AC sputtering methods are more preferable because they provide good film coverage and make it easier to reduce resistance.
  • the pixel separation layer is formed of a silicon nitride (SiN) film, a silicon oxynitride (SiON) film, or a silicon oxide (SiO) film formed by chemical vapor deposition (CVD).
  • SiN silicon nitride
  • SiON silicon oxynitride
  • SiO silicon oxide
  • the organic compound layer, particularly the hole transport layer is thinly formed on the sidewall of the pixel separation layer.
  • the thickness of the sidewall of the pixel separation layer can be thinned by increasing the taper angle of the sidewall of the pixel separation layer or the thickness of the pixel separation layer to increase vignetting during deposition.
  • the sidewall taper angle and film thickness of the pixel separation layer it is preferable to adjust the sidewall taper angle and film thickness of the pixel separation layer to such an extent that no voids are formed in the protective layer formed on top of it. Since no voids are formed in the protective layer, the occurrence of defects in the protective layer can be reduced. Since the occurrence of defects in the protective layer is reduced, it is possible to reduce deterioration in reliability such as the occurrence of dark spots and poor conductivity of the second electrode.
  • the taper angle of the sidewall of the pixel separation layer is not steep, it is possible to effectively suppress charge leakage to adjacent pixels.
  • the thickness of the pixel separation layer is preferably 10 nm or more and 150 nm or less. The same effect can also be achieved even if the pixel electrode is composed only of a pixel electrode without a pixel separation layer.
  • the thickness of the pixel electrode half or less than that of the organic layer or to make the edge of the pixel electrode a forward taper of less than 60 degrees, since this reduces short circuits in the organic light-emitting element.
  • the organic compound layer of the organic light-emitting element may be formed as a single layer or multiple layers. When multiple layers are included, they may be called hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, or electron injection layer depending on their functions.
  • the organic compound layer is mainly composed of organic compounds, but may also contain inorganic atoms or inorganic compounds. For example, it may contain copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum, zinc, or the like.
  • the organic compound layer may be disposed between the first electrode and the second electrode, or may be disposed in contact with the first electrode and the second electrode.
  • a protective layer may be provided on the second electrode.
  • a passivation film such as silicon nitride may be provided on the cathode to reduce the intrusion of water into the organic compound layer.
  • the cathode may be transported to another chamber without breaking the vacuum, and a silicon nitride film having a thickness of 2 ⁇ m may be formed by the CVD method to form a protective layer.
  • a protective layer may be provided using the atomic deposition method (ALD method) after the film formation by the CVD method.
  • the material of the film by the ALD method is not limited, and may be silicon nitride, silicon oxide, aluminum oxide, etc. Silicon nitride may be further formed by the CVD method on the film formed by the ALD method.
  • the film by the ALD method may have a smaller thickness than the film formed by the CVD method. Specifically, it may be 50% or less, or even 10% or less.
  • a color filter may be provided on the protective layer.
  • a color filter taking into consideration the size of the organic light-emitting element may be provided on another substrate and then bonded to the substrate on which the organic light-emitting element is provided, or a color filter may be patterned on the protective layer described above using a photolithography technique.
  • the color filter may be made of a polymer.
  • a planarization layer may be provided between the color filter and the protective layer.
  • the planarization layer is provided for the purpose of reducing the unevenness of the layer below.
  • the planarization layer may be called a resin layer.
  • the planarization layer may be composed of an organic compound, and may be a low molecular weight or a high molecular weight, but is preferably a high molecular weight.
  • the planarization layer may be provided above and below the color filter, and may be made of the same or different materials. Specific examples include polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenolic resin, epoxy resin, silicone resin, and urea resin.
  • the organic light-emitting element may have an optical member such as a microlens on its light-emitting side.
  • the microlens may be made of acrylic resin, epoxy resin, or the like.
  • the microlens may be intended to increase the amount of light extracted from the organic light-emitting element and control the direction of the extracted light.
  • the microlens may have a hemispherical shape. When the microlens has a hemispherical shape, among the tangents to the hemisphere, there is a tangent that is parallel to the insulating layer, and the tangent and the hemisphere are the vertices of the microlens.
  • the vertex of the microlens can be determined in the same manner in any cross-sectional view. That is, among the tangents to the semicircle of the microlens in the cross-sectional view, there is a tangent that is parallel to the insulating layer, and the tangent and the semicircle are the vertices of the microlens.
  • the midpoint of the microlens can also be defined.
  • a line segment can be imagined from the point where an arc shape ends to the point where another arc shape ends, and the midpoint of this line segment can be called the midpoint of the microlens.
  • the cross section used to determine the vertex and midpoint may be a cross section perpendicular to the insulating layer.
  • the microlens has a first surface having a convex portion and a second surface opposite the first surface. It is preferable that the second surface is disposed closer to the functional layer than the first surface. To achieve this configuration, it is necessary to form the microlens on the light-emitting element.
  • the functional layer is an organic layer, it is preferable to avoid processes that result in high temperatures during the manufacturing process.
  • the glass transition temperatures of the organic compounds that make up the organic layer are all 100°C or higher, and more preferably 130°C or higher.
  • the organic light-emitting element of this embodiment may have an opposing substrate on the planarization layer.
  • the opposing substrate is called an opposing substrate because it is provided at a position corresponding to the above-mentioned substrate.
  • the constituent material of the opposing substrate may be the same as that of the above-mentioned substrate.
  • the opposing substrate can be the second substrate.
  • organic compound layers constituting the organic light-emitting device of this embodiment are formed by the method described below.
  • the organic compound layer constituting the organic light-emitting element of this embodiment can be formed using a dry process such as vacuum deposition, ionization deposition, sputtering, plasma, etc. Also, instead of a dry process, a wet process can be used in which the compound is dissolved in an appropriate solvent and a layer is formed by a known coating method (e.g., spin coating, dipping, casting, LB method, inkjet method, etc.).
  • a dry process such as vacuum deposition, ionization deposition, sputtering, plasma, etc.
  • a wet process can be used in which the compound is dissolved in an appropriate solvent and a layer is formed by a known coating method (e.g., spin coating, dipping, casting, LB method, inkjet method, etc.).
  • the film can also be formed by combining it with an appropriate binder resin.
  • Binder resins include, but are not limited to, polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, urea resin, etc. Furthermore, these binder resins may be used alone as homopolymers or copolymers, or two or more types may be mixed and used. Furthermore, known additives such as plasticizers, antioxidants, and ultraviolet absorbers may be used in combination as necessary.
  • the light-emitting device having the organic light-emitting element of this embodiment may have a pixel circuit connected to the organic light-emitting element.
  • the pixel circuit may be an active matrix type that controls the emission of the first organic light-emitting element and the second organic light-emitting element independently.
  • the active matrix type circuit may be voltage programming or current programming.
  • the drive circuit has a pixel circuit for each pixel.
  • the pixel circuit may have an organic light-emitting element, a transistor that controls the emission luminance of the organic light-emitting element, a transistor that controls the emission timing, a capacitance that holds the gate voltage of the transistor that controls the emission luminance, and a transistor for connecting to GND without passing through the light-emitting element.
  • the light-emitting device has a display region and a peripheral region arranged around the display region.
  • the display region has a pixel circuit
  • the peripheral region has a display control circuit.
  • the mobility of the transistors constituting the pixel circuit may be smaller than the mobility of the transistors constituting the display control circuit.
  • the slope of the current-voltage characteristics of the transistors constituting the pixel circuit may be smaller than the slope of the current-voltage characteristics of the transistors constituting the display control circuit. The slope of the current-voltage characteristics can be measured by the so-called Vg-Ig characteristics.
  • the transistors constituting the pixel circuit are transistors connected to a light-emitting element such as a first organic light-emitting element.
  • the organic light-emitting element of this embodiment has a plurality of pixels.
  • the pixels have sub-pixels that emit different colors from each other.
  • the sub-pixels may have, for example, RGB emission colors.
  • the pixels emit light in a region also called a pixel aperture. This region is the same as the first region.
  • the pixel aperture may be 15 ⁇ m or less, or 5 ⁇ m or more. More specifically, it may be 11 ⁇ m, 9.5 ⁇ m, 7.4 ⁇ m, 6.4 ⁇ m, etc.
  • the distance between the sub-pixels may be 10 ⁇ m or less, or more specifically, it may be 8 ⁇ m, 7.4 ⁇ m, 6.4 ⁇ m.
  • the pixels may have a known arrangement in plan view. For example, they may have a stripe arrangement, a delta arrangement, a pentile arrangement, or a Bayer arrangement.
  • the shape of the subpixels in plan view may be any known shape. For example, a rectangle, a quadrangle such as a diamond, or a hexagon. Note that if the shape of a subpixel is close to a rectangle, it is considered to be included in the rectangle. Therefore, the shape of the subpixel may be a shape that is close to any of the known shapes listed above.
  • a pixel may be constructed by combining the shape of the subpixels and the pixel arrangement.
  • the organic light-emitting element according to the present embodiment can be used as a component of a display device or a lighting device.
  • Other uses of the organic light-emitting element include an exposure light source for an electrophotographic image forming apparatus, a backlight for a liquid crystal display device, and a light-emitting device having a white light source and a color filter.
  • the display device may be an image information processing device that has an image input unit that inputs image information from an area CCD, a linear CCD, a memory card, etc., has an information processing unit that processes the input information, and displays the input image on the display unit.
  • the display unit of the imaging device or inkjet printer may have a touch panel function.
  • the driving method of this touch panel function is not particularly limited and may be an infrared method, a capacitance method, a resistive film method, or an electromagnetic induction method.
  • the display device may also be used in the display unit of a multifunction printer.
  • Figs. 12A and 12B are schematic cross-sectional views showing an example of a display device having an organic light-emitting element and a transistor connected to the organic light-emitting element.
  • the transistor is an example of an active element.
  • the transistor may be a thin-film transistor (TFT).
  • FIG. 12A shows an example of a pixel, which is a component of a display device having a light-emitting element according to the embodiment described above.
  • the pixel has sub-pixels 30.
  • the sub-pixels 30 are divided into 30R, 30G, and 30B according to the light emitted from the sub-pixels.
  • the emitted light color may be distinguished by the wavelength emitted from the light-emitting layer, or the light emitted from the sub-pixels may be selectively transmitted or color-converted by a color filter or the like.
  • Each sub-pixel has a reflective electrode 32, which is a first electrode, on an interlayer insulating layer 31, and an insulating layer 33 that covers the edge of the reflective electrode 32.
  • the sub-pixel 30 has an organic compound layer 34 that covers the reflective electrode 32 and the insulating layer 33, a transparent electrode 35, which is a second electrode, a protective layer 36, and color filters 37R, 37G, and 37B.
  • the interlayer insulating layer 31 may have a transistor and a capacitance element disposed underneath or inside it.
  • the transistor and the first electrode may be electrically connected via a contact hole or the like (not shown).
  • the insulating layer 33 is also called a bank or pixel separation film. It covers the ends of the first electrode and is disposed to surround the first electrode. The portion where the insulating layer is not disposed contacts the organic compound layer 34 and becomes the light-emitting region.
  • the organic compound layer 34 has a hole injection layer 341, a hole transport layer 342, a first light-emitting layer 343, a second light-emitting layer 344, and an electron transport layer 345.
  • the transparent electrode 35 may be a transparent electrode, a reflective electrode, or a semi-transparent electrode as the second electrode.
  • the protective layer 36 reduces the penetration of moisture into the organic compound layer.
  • the protective layer 36 is illustrated as a single layer, but may be multiple layers. Each layer may have an inorganic compound layer and an organic compound layer.
  • the color filters are divided into color filters 37R, 37G, and 37B according to their colors.
  • the color filters may be formed on a planarizing film (not shown).
  • a resin protective layer (not shown) may be provided on the color filters.
  • the color filters may be formed on the protective layer 36. Alternatively, the color filters may be provided on an opposing substrate such as a glass substrate and then bonded.
  • FIG. 12B shows a display device 60 having a light-emitting element according to the embodiment described above.
  • the display device 60 has an organic light-emitting element 76 and a TFT 68 as an example of a transistor.
  • a substrate 61 such as glass or silicon is provided with an insulating layer 62 on top of it.
  • An active element 68 such as a TFT is disposed on the insulating layer 62, and a gate electrode 63, a gate insulating film 64, and a semiconductor layer 65 of the active element are disposed on top of the insulating layer 62.
  • the TFT 68 is also composed of a semiconductor layer 65, a drain electrode 66, and a source electrode 67.
  • An insulating film 69 is provided on top of the TFT 68.
  • An anode 71 constituting the organic light-emitting element 76 and a source electrode 67 are connected via a contact hole 70 provided in the insulating film 69.
  • the method of electrical connection between the electrodes (anode, cathode) included in the organic light-emitting element 76 and the electrodes (source electrode, drain electrode) included in the TFT 68 is not limited to the form shown in FIG. 12B. In other words, it is sufficient that either the anode or the cathode is electrically connected to either the TFT source electrode or the drain electrode.
  • TFT refers to thin film transistor.
  • the organic compound layer 72 is illustrated as a single layer, but the organic compound layer 72 may be multiple layers.
  • a first protective layer 74 and a second protective layer 75 are provided on the cathode 73 to reduce deterioration of the organic light-emitting element.
  • transistors are used as switching elements, but other switching elements may be used instead.
  • the transistors used in the display device 60 of FIG. 12B are not limited to transistors using single crystal silicon wafers, and may be thin film transistors having an active layer on the insulating surface of a substrate.
  • active layers include single crystal silicon, amorphous silicon, non-single crystal silicon such as microcrystalline silicon, and non-single crystal oxide semiconductors such as indium zinc oxide and indium gallium zinc oxide.
  • Thin film transistors are also called TFT elements.
  • the transistors included in the display device 60 of FIG. 12B may be formed within a substrate such as a Si substrate.
  • a substrate such as a Si substrate.
  • Formed within a substrate here means that the substrate itself, such as a Si substrate, is processed to produce the transistors.
  • having a transistor within a substrate may mean that the substrate and the transistor are formed integrally.
  • the organic light-emitting element according to the above embodiment has its light emission brightness controlled by a TFT, which is an example of a switching element, and by arranging the organic light-emitting elements on multiple surfaces, an image can be displayed with the respective light emission brightnesses.
  • the switching elements used here are not limited to TFTs, and may be transistors formed from low-temperature polysilicon, or active matrix drivers formed on a substrate such as a Si substrate. Note that on a substrate includes the meaning within the substrate. Whether to provide transistors within the substrate or to use TFTs is selected according to the size of the display unit; for example, if the size is about 0.5 inches, it is preferable to provide the organic light-emitting element on a Si substrate.
  • FIG. 13 is a schematic diagram showing an example of a display device having an organic light-emitting element according to the above embodiment.
  • the display device 1000 may have a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009.
  • Flexible printed circuits FPCs 1002 and 1004 are connected to the touch panel 1003 and the display panel 1005.
  • Transistors are printed on the circuit board 1007.
  • the battery 1008 may not be provided if the display device is not a portable device, and may be provided in a different position if the display device is a portable device.
  • the display device 1000 may have color filters having red, green, and blue colors.
  • the red, green, and blue colors of the color filters may be arranged in a delta arrangement.
  • the display device 1000 may also be used in the display section of a mobile terminal. In this case, the display device 1000 may have both a display function and an operation function. Examples of mobile terminals include mobile phones such as smartphones, tablets, and head-mounted displays.
  • the display device 1000 may be used as a display unit of an imaging device having an optical unit with multiple lenses and an imaging element that receives light that passes through the optical unit.
  • the imaging device may have a display unit that displays information acquired by the imaging element.
  • the display unit may be a display unit exposed to the outside of the imaging device, or a display unit disposed within the viewfinder.
  • the imaging device may be a digital camera or a digital video camera.
  • FIG. 14A shows a schematic diagram illustrating an example of an imaging device having an organic light-emitting element according to the above embodiment.
  • the imaging device 1100 may have a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104.
  • the viewfinder 1101 may have the above-mentioned display device.
  • the display device may display not only the image to be captured, but also environmental information, imaging instructions, etc.
  • the environmental information may include the intensity of external light, the direction of external light, the speed at which the subject moves, the possibility that the subject will be obscured by an obstruction, etc.
  • a display device using the organic light-emitting elements of the above embodiment can be used more preferably than liquid crystal display devices, which require high display speed.
  • the imaging device 1100 has an optical section (not shown).
  • the optical section has multiple lenses, which form an image on an imaging element housed in a housing 1104.
  • the focus of the multiple lenses can be adjusted by adjusting their relative positions. This operation can also be performed automatically.
  • the imaging device may be called a photoelectric conversion device. Rather than capturing images sequentially, photoelectric conversion devices can include imaging methods such as a method of detecting the difference from the previous image and a method of cutting out an image that is constantly recorded.
  • FIG. 14B is a schematic diagram showing an example of an electronic device having an organic light-emitting element according to the embodiment.
  • the electronic device 1200 has a display unit 1201, an operation unit 1202, and a housing 1203.
  • the housing 1203 may have a circuit, a printed circuit board having the circuit, a battery, and a communication unit.
  • the operation unit 1202 may be a button or a touch panel type reaction unit.
  • the operation unit may be a biometric recognition unit that recognizes a fingerprint and performs unlocking, etc.
  • An electronic device having a communication unit can also be called a communication device.
  • the electronic device 1200 may further have a camera function by including a lens and an image sensor. An image captured by the camera function is displayed on the display unit. Examples of the electronic device include a smartphone and a laptop computer.
  • FIG. 15A shows a schematic diagram illustrating an example of a display device having an organic light-emitting element according to the embodiment described above.
  • FIG. 15A shows a display device 1300 such as a television monitor or a PC monitor.
  • the display device 1300 has a frame 1301 and a display unit 1302.
  • the organic light-emitting element according to the embodiment described above may be used in the display unit 1302.
  • the display device 1300 also has a frame 1301 and a base 1303 that supports the display unit 1302.
  • the base 1303 is not limited to the form shown in FIG. 15A.
  • the bottom side of the frame 1301 may also serve as the base.
  • the frame 1301 and the display unit 1302 may also be curved.
  • the radius of curvature may be 5000 mm or more and 6000 mm or less.
  • FIG. 15B is a schematic diagram showing another example of a display device having an organic light-emitting element according to the embodiment described above.
  • the display device 1310 in FIG. 15B is configured to be bendable, and is a so-called foldable display device.
  • the display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314.
  • the first display unit 1311 and the second display unit 1312 may have the organic light-emitting element according to the embodiment described above.
  • the first display unit 1311 and the second display unit 1312 may be a single display unit without a joint.
  • the first display unit 1311 and the second display unit 1312 can be separated by the bending point.
  • the first display unit 1311 and the second display unit 1312 may each display different images, or the first display unit and the second display unit may display a single image.
  • FIG. 16A shows a schematic diagram illustrating an example of a lighting device having an organic light-emitting element according to the above embodiment.
  • the lighting device 1400 may have a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion section 1405.
  • the light source has the organic light-emitting element according to the above embodiment.
  • the optical filter may be a filter that improves the color rendering of the light source.
  • the light diffusion section can effectively diffuse the light of the light source, such as for lighting up, and deliver the light over a wide range.
  • the optical filter and the light diffusion section may be provided on the light emission side of the lighting. If necessary, a cover may be provided on the outermost part.
  • the lighting device 1400 is, for example, a device that illuminates a room.
  • the lighting device may emit white light, daylight white light, or any other color from blue to red. It may have a dimming circuit that adjusts the light intensity.
  • the lighting device 1400 may have an organic light-emitting element according to the above embodiment and a power supply circuit connected to it.
  • the power supply circuit is a circuit that converts AC voltage to DC voltage.
  • white has a color temperature of 4200K
  • daylight white has a color temperature of 5000K.
  • the lighting device 1400 may have a color filter.
  • the lighting device 1400 may have a heat dissipation unit.
  • the heat dissipation unit dissipates heat inside the device to the outside of the device, and examples of the heat dissipation unit include metals with high specific heat and liquid silicon.
  • FIG. 16B is a schematic diagram of an automobile, which is an example of a moving object having an organic light-emitting element according to the embodiment described above.
  • the automobile has tail lamps, which are an example of a lamp.
  • the automobile 1500 has tail lamps 1501, and may be configured to turn on the tail lamps when braking or the like is performed.
  • Tail lamp 1501 has an organic light-emitting element according to the embodiment described above.
  • the tail lamp may have a protective member that protects the organic EL element.
  • the protective member may be made of any material as long as it has a relatively high strength and is transparent, but it is preferable that the protective member is made of polycarbonate or the like. Polycarbonate may be mixed with a furandicarboxylic acid derivative, an acrylonitrile derivative, or the like.
  • the automobile 1500 may have a body 1503 and a window 1502 attached to it.
  • the window may be a transparent display as long as it is not a window for checking the front and rear of the automobile.
  • the transparent display may have an organic light-emitting element according to the above embodiment. In this case, the constituent materials of the electrodes and the like of the organic light-emitting element are made of transparent materials.
  • the moving object having the organic light-emitting element according to the above embodiment may be a ship, an aircraft, a drone, or the like.
  • the moving object may have a body and a lamp provided on the body.
  • the lamp may emit light to indicate the position of the body.
  • the lamp has the organic light-emitting element according to the above embodiment.
  • the display device having the organic light-emitting element of the above embodiment can be applied to a system that can be attached as a wearable device such as smart glasses, HMD, or smart contacts.
  • An imaging and display device used in such an application example has an imaging device capable of photoelectrically converting visible light, and a display device capable of emitting visible light.
  • FIG. 17A shows glasses 1600 (smart glasses) as an application example of a display device having the organic light-emitting element of the above embodiment.
  • An imaging device 1602 such as a CMOS sensor or SPAD is provided on the front side of a lens 1601 of the glasses 1600.
  • any of the display devices described above is provided on the back side of the lens 1601.
  • the glasses 1600 further include a control device 1603.
  • the control device 1603 functions as a power source that supplies power to the image capture device 1602 and the display device according to each embodiment.
  • the control device 1603 also controls the operation of the image capture device 1602 and the display device.
  • the lens 1601 is formed with an optical system for focusing light on the image capture device 1602.
  • FIG. 17B shows glasses 1610 (smart glasses) according to another application example of the display device having the organic light-emitting element of the above embodiment.
  • the glasses 1610 have a control device 1612.
  • the control device 1612 is equipped with an imaging device corresponding to the imaging device 1602 and a display device.
  • An optical system for projecting light emitted by the display device in the control device 1612 is formed in the lens 1611, and an image is projected onto the lens 1611.
  • the control device 1612 functions as a power source that supplies power to the imaging device and the display device, and controls the operation of the imaging device and the display device.
  • the control device may have a line-of-sight detection unit that detects the line of sight of the wearer. Infrared light may be used to detect the line of sight.
  • the infrared light emission unit emits infrared light toward the eyeball of a user gazing at a displayed image.
  • An imaging unit having a light receiving element detects the reflected light of the emitted infrared light from the eyeball, thereby obtaining an image of the eyeball.
  • the gaze of the user with respect to the displayed image is detected from an image of the eyeball obtained by capturing infrared light.
  • Any known method can be applied to gaze detection using the image of the eyeball.
  • a gaze detection method based on a Purkinje image formed by reflection of irradiated light on the cornea can be used. More specifically, the gaze detection process is performed based on the pupil-corneal reflex method. Using the pupil-corneal reflex method, a gaze vector that indicates the direction (rotation angle) of the eyeball is calculated based on the pupil image and the Purkinje image included in the captured image of the eyeball, thereby detecting the user's gaze.
  • the display device having the organic light-emitting element may have an imaging device having a light-receiving element, and may control the display image of the display device based on user line-of-sight information from the imaging device.
  • the display device determines a first field of view area on which the user gazes and a second field of view area other than the first field of view area based on the line of sight information.
  • the first field of view area and the second field of view area may be determined by a control device of the display device, or may be determined by an external control device and received by the display device.
  • the display resolution of the first field of view area may be controlled to be higher than the display resolution of the second field of view area. In other words, the resolution of the second field of view area may be lower than the first field of view area.
  • the display area may have a first display area and a second display area different from the first display area, and the display device may select an area with a high priority from the first display area and the second display area based on the line-of-sight information.
  • the first field of view area and the second field of view area may be determined by a control device of the display device, or may be determined by an external control device and received by the display device.
  • the display device may control the resolution of the high priority area to be higher than the resolution of areas other than the high priority area. In other words, the display device may lower the resolution of an area with a relatively low priority.
  • the display device may use AI (Artificial Intelligence) to determine the first field of view area and the high priority area.
  • AI Artificial Intelligence
  • the AI may be a model configured to estimate the angle of gaze and the distance to an object in the line of sight from the image of the eyeball, using as teacher data an image of the eyeball and the direction in which the eyeball in the image was actually looking.
  • the AI program may be possessed by the display device, the imaging device, or an external device. If the external device has the AI program, the AI program is transmitted from the external device to the display device via communication.
  • the display device controls the display based on visual detection
  • the display device can be preferably applied to smart glasses that further include an imaging device that captures images of the outside world.
  • the smart glasses can display captured external information in real time.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Geometry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Optical Filters (AREA)
PCT/JP2023/037476 2022-12-13 2023-10-17 有機発光素子 Ceased WO2024127797A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN202380085019.8A CN120345391A (zh) 2022-12-13 2023-10-17 有机发光元件
KR1020257016306A KR20250092228A (ko) 2022-12-13 2023-10-17 유기 발광 소자, 표시장치, 광전 변환장치, 전자 기기, 조명장치 및 이동체
DE112023004722.7T DE112023004722T5 (de) 2022-12-13 2023-10-17 Organisches lichtemittierendes element, anzeigevorrichtung, vorrichtung zur photoelektrischen umwandlung, elektronische vorrichtung, beleuchtungsvorrichtung und beweglicher körper
US19/236,350 US20260059982A1 (en) 2022-12-13 2025-06-12 Organic light-emitting element

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022198814A JP2024084505A (ja) 2022-12-13 2022-12-13 有機発光素子
JP2022-198814 2022-12-13

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US19/236,350 Continuation US20260059982A1 (en) 2022-12-13 2025-06-12 Organic light-emitting element

Publications (1)

Publication Number Publication Date
WO2024127797A1 true WO2024127797A1 (ja) 2024-06-20

Family

ID=91485437

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2023/037476 Ceased WO2024127797A1 (ja) 2022-12-13 2023-10-17 有機発光素子

Country Status (6)

Country Link
US (1) US20260059982A1 (https=)
JP (1) JP2024084505A (https=)
KR (1) KR20250092228A (https=)
CN (1) CN120345391A (https=)
DE (1) DE112023004722T5 (https=)
WO (1) WO2024127797A1 (https=)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012227137A (ja) * 2011-04-07 2012-11-15 Semiconductor Energy Lab Co Ltd 発光装置、及び発光装置の作製方法
US20170179418A1 (en) * 2015-12-17 2017-06-22 Lg Display Co., Ltd. Organic Light Emitting Display Device
JP2019215541A (ja) * 2018-06-11 2019-12-19 エルジー ディスプレイ カンパニー リミテッド 表示装置およびヘッドマウントディスプレイ
US20200044178A1 (en) * 2018-07-31 2020-02-06 Lg Display Co., Ltd. Electroluminescent display device
KR20200082491A (ko) * 2018-12-28 2020-07-08 엘지디스플레이 주식회사 표시장치
WO2022162501A1 (ja) * 2021-01-28 2022-08-04 株式会社半導体エネルギー研究所 表示装置
JP2022123434A (ja) * 2021-02-12 2022-08-24 株式会社ジャパンディスプレイ 表示装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5708152B2 (ja) 2011-03-31 2015-04-30 ソニー株式会社 表示装置およびその製造方法
US9345529B2 (en) 2013-07-15 2016-05-24 Medtronic Cryocath Lp Mapping wire with heating element to allow axial movement during cryoballoon ablation

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012227137A (ja) * 2011-04-07 2012-11-15 Semiconductor Energy Lab Co Ltd 発光装置、及び発光装置の作製方法
US20170179418A1 (en) * 2015-12-17 2017-06-22 Lg Display Co., Ltd. Organic Light Emitting Display Device
JP2019215541A (ja) * 2018-06-11 2019-12-19 エルジー ディスプレイ カンパニー リミテッド 表示装置およびヘッドマウントディスプレイ
US20200044178A1 (en) * 2018-07-31 2020-02-06 Lg Display Co., Ltd. Electroluminescent display device
KR20200082491A (ko) * 2018-12-28 2020-07-08 엘지디스플레이 주식회사 표시장치
WO2022162501A1 (ja) * 2021-01-28 2022-08-04 株式会社半導体エネルギー研究所 表示装置
JP2022123434A (ja) * 2021-02-12 2022-08-24 株式会社ジャパンディスプレイ 表示装置

Also Published As

Publication number Publication date
DE112023004722T5 (de) 2025-08-28
CN120345391A (zh) 2025-07-18
US20260059982A1 (en) 2026-02-26
KR20250092228A (ko) 2025-06-23
JP2024084505A (ja) 2024-06-25

Similar Documents

Publication Publication Date Title
JP7689419B2 (ja) 有機デバイス、その製造方法、表示装置、光電変換装置、電子機器、照明装置および移動体
JP7478007B2 (ja) 電子デバイスおよびその製造方法、電子装置ならびに移動体
JP7528016B2 (ja) 発光装置、表示装置、撮像装置、及び電子機器
JP7806140B2 (ja) 有機発光装置、表示装置、及び電子機器
US20250311541A1 (en) Organic light-emitting element
JP7500212B2 (ja) 発光装置、表示撮像装置、及び電子機器
JP2024081275A (ja) 蒸着マスクおよび有機発光素子の製造方法
WO2024127797A1 (ja) 有機発光素子
JP7709423B2 (ja) 発光装置、表示装置、光電変換装置、電子機器および移動体
JP2024101303A (ja) 発光素子
JP7645915B2 (ja) 発光装置及びその製造方法、表示装置、光電変換装置、電子機器、照明装置、並びに移動体
JP7675132B2 (ja) 発光装置、表示装置、光電変換装置、電子機器、および、ウェアラブルデバイス
JP7606547B2 (ja) 発光装置、表示装置、光電変換装置、電子機器、照明装置、および、移動体
JP2025005678A (ja) 発光素子、発光装置、それを有する撮像装置、電子機器、照明装置、移動体
WO2025109982A1 (ja) 発光装置、表示装置、光電変換装置、電子機器、照明装置及び移動体
JP2024098819A (ja) 発光装置、表示装置、光電変換装置、電子機器、および、照明装置
WO2024185261A1 (ja) 発光装置およびその製造方法
JP2025149107A (ja) 発光装置、表示装置、撮像装置及び電子機器
JP2025151094A (ja) 発光装置、表示装置、撮像装置及び電子機器
JP2025084054A (ja) 発光装置、表示装置、光電変換装置、電子機器、照明装置及び移動体
JP2024090678A (ja) 発光素子
JP2025076141A (ja) 発光装置、画像形成装置、表示装置、光電変換装置、電子機器、照明装置、移動体、および、ウェアラブルデバイス
JP2025148008A (ja) 発光装置、表示装置、光電変換装置、および、電子機器
JP2025164567A (ja) 発光装置、表示装置、撮像装置、及び電子機器
JP2024100595A (ja) 発光装置、表示装置、光電変換装置、電子機器、照明装置、移動体、および、発光装置の製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23903096

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20257016306

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 202380085019.8

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 1020257016306

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 112023004722

Country of ref document: DE

WWP Wipo information: published in national office

Ref document number: 202380085019.8

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 112023004722

Country of ref document: DE

122 Ep: pct application non-entry in european phase

Ref document number: 23903096

Country of ref document: EP

Kind code of ref document: A1